| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438120000 | With vibration step | 7 |
| 20080213945 | Semiconductor device and fabrication process thereof - A semiconductor device includes a mount substrate and a semiconductor chip mounted upon the mount substrate via a metal bump, wherein metal bump includes an inner part joined to the semiconductor chip and an outer part covering the inner part, the outer part having an increased hardness as compared with the inner part. | 09-04-2008 |
| 20090155958 | ROBUST DIE BONDING PROCESS FOR LED DIES - Systems and methods are provided to mitigate excess die attachment material accrual, and parasitic conductive paths formed thereby. A die attachment material (e.g., solder) is melted using a combination of localized heat sources and ultrasonic energy. The heat sources bring the die attachment material close to its melting point, which reduces an amount of bonding force associated with purely ultrasonic bonding techniques. An ultrasonic transducer brings the die attachment material the rest of the way up to its melting point, which reduces the overall temperature that the die and/or sensitive components thereon endure during the bonding process. | 06-18-2009 |
| 20090325348 | METHOD FOR FINE-PITCH, LOW STRESS FLIP-CHIP INTERCONNECT - Attaching a semiconductor chip to a substrate by applying mechanical vibrations ( | 12-31-2009 |
| 20100167468 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes a bonding step of bonding a chip on a wiring board by means of a bonding layer, and a wire bonding step of bonding a wire to a pad on the chip while applying ultrasonic vibration after the bonding step. A material having an elastic modulus of 100 MPa or higher at a process temperature in the wire bonding step is used as the bonding layer. | 07-01-2010 |
| 20100323476 | ULTRASONIC BONDING EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - An ultrasonic bonding equipment for manufacturing a semiconductor device comprises a tip portion. The tip portion has a top surface which is faced to a member to be bonded, and propagates an ultrasonic vibration to the top surface. A plurality of protruding portions are provided on the top surface. Each of the protruding portions has: a first pair of opposite side surfaces inclined with respect to the top surface; and a second pair of opposite side surfaces substantially vertical to the top surface. A semiconductor device comprises: a semiconductor chip; a lead; and a bonding strap electrically connecting the semiconductor chip and the lead. A recess is formed on an upper surface of the bonding strap in at least one of a first region where the bonding strap and the semiconductor chip are connected and a second region where the bonding strap and the lead is connected. A first pair of opposite side surfaces of the recess are inclined with respect to the upper surface of the bonding strap, and a second pair of opposite side surfaces of the recess are substantially vertical to the upper surface of the bonding strap. | 12-23-2010 |
| 20110104857 | PACKAGED MICRODEVICES AND METHODS FOR MANUFACTURING PACKAGED MICRODEVICES - Microdevices and methods for packaging microdevices. One embodiment of a packaged microdevice includes a substrate having a mounting area, contacts in the mounting area, and external connectors electrically coupled to corresponding contacts. The microdevice also includes a die located across from the mounting area and spaced apart from the substrate by a gap. The die has an integrated circuit and pads electrically coupled to the integrated circuit. The microdevice further includes first and second conductive elements in the gap that form interconnects between the contacts of the substrate and corresponding pads of the die. The first conductive elements are electrically connected to contacts on the substrate, and the second conductive elements are electrically coupled to corresponding pads of the die. The first conductive elements are attached to the second conductive elements at corresponding interfaces such that the interconnects connect the contacts of the substrate directly to corresponding pads on the die within the gap. | 05-05-2011 |
| 20130244380 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An ultrasonic welding tool is used to bond end portions of an external connection terminal to circuit patterns of an insulating substrate, with a Vickers hardness not lower than 90. Bonding end portions are provided integrally with a bar in the external connection terminal. A bonding end portion located substantially in the lengthwise center of the bar is bonded first, then others are bonded alternately in order toward either end. Hardness of the bonding end portions is increased so that strength of the ultrasonic welding portions is increased, and displacement of the bonding end portion in either end from its regular position is suppressed to keep bonding strength high. Bonding strength of the ultrasonic welding portions between the external connection terminal and the circuit patterns of the insulating substrate can be increased so that long-term reliability can be secured in a semiconductor device. | 09-19-2013 |
