Class / Patent application number | Description | Number of patent applications / Date published |
438085000 | Having metal oxide or copper sulfide compound semiconductive component | 42 |
20080274582 | Method of Making Silicon Solar Cells Containing μC Silicon Layers - The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH | 11-06-2008 |
20090011536 | OPTICAL DEVICE WITH IROX NANOSTRUTURE ELECTRODE NEURAL INTERFACE - An optical device with an iridium oxide (IrOx) electrode neural interface, and a corresponding fabrication method are provided. The method provides a substrate and forms a first conductive electrode overlying the substrate. A photovoltaic device having a first electrical interface is connected to the first electrode. A second electrical interface of the photovoltaic device is connected to a second conductive electrode formed overlying the photovoltaic device. An array of neural interface single-crystal IrOx nanostructures are formed overlying the second electrode, where x≦4. The IrOx nanostructures can be partially coated with an electrical insulator, such as SiO | 01-08-2009 |
20090042333 | Structure and Method for Surfaced-Passivated Zinc-Oxide - A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact. | 02-12-2009 |
20100167460 | ZINC OXIDE FILM FORMING METHOD AND APPARATUS - In the zinc oxide film forming apparatus ( | 07-01-2010 |
20100233841 | THIN-FILM SOLAR CELL - Thin-film solar cells of the CIGS-type use two integrally formed buffer layers, a first ALD Zn(O,S) buffer layer on top of the CIGS-layer and a second ALD ZnO-buffer layer on top of the first buffer layer. Both buffer layers are deposited in the same process step using ALD (atom layer deposition). The technology also relates to a method of producing the cell and a process line for manufacturing of the cell structure. | 09-16-2010 |
20100248418 | PHOTOELECTRIC CONVERTER, AND TRANSPARENT CONDUCTIVE SUBSTRATE FOR THE SAME - A highly durable photoelectric converter with excellent photoelectric conversion efficiency is prevented from resistance loss or lowering of photoelectric conversion efficiency and free from problems of corrosion and reverse electron transfer reaction. Specifically disclosed is a photoelectric converter ( | 09-30-2010 |
20110092011 | METHOD FOR ANTIREFLECTION TREATMENT OF A ZINC OXIDE FILM AND METHOD FOR MANUFACTURING SOLAR CELL USING THE SAME - Provided are a method for antireflection treatment of a zinc oxide film and a method for manufacturing a solar cell using the same. In the anti-reflection treatment, a substrate is prepared, then a polycrystalline zinc oxide film is formed on the substrate. A surface of the polycrystalline zinc oxide film is textured. Here, the roughening of the surface of the polycrystalline zinc oxide film comprises wet-etching the polycrystalline zinc oxide film on the substrate using an etching solution mixed with nitric acid and hydrogen peroxide. | 04-21-2011 |
20110124148 | METHODS OF FORMING NANO STRUCTURE AND METHODS OF FORMING SOLAR CELL USING THE SAME - Provided are methods of forming a nano structure and method of forming a solar cell using the same. The method of forming the nano structure includes: preparing a template; ionizing a surface of the template; forming an oxide layer enclosing the template on the surface of the template; and removing the template. | 05-26-2011 |
20110244623 | RAPID THERMAL METHOD AND DEVICE FOR THIN FILM TANDEM CELL - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first transparent electrode layer is formed overlying the surface region. A multilayered structure including a copper material and an indium material is formed overlying a electrode surface region. The multilayered structure is subjected to a plurality of sulfur bearing entities during a rapid thermal process to form an absorber material comprising a copper entity, an indium entity, and a sulfur entity. The rapid thermal process uses a ramp time ranging from about 10 Degrees Celsius/second to about 50 Degrees Celsius/second. In a specific embodiment, the first transparent electrode layer is maintained to a sheet resistance of less than or equal to about 10 Ohms/square centimeters and an optical transmission of 90 percent and greater | 10-06-2011 |
20110263071 | Process for impregnating photosensitizing dye onto conductive substrate of photoanode - The present invention provides a process for preparing a photoanode of a dye-sensitized solar cell (DSSC) by pressure swing impregnation, which includes impregnating a metal oxide layer on a conductive substrate in a photosensitizing dye solution in a vessel; introducing a pressurized inert gas into the vessel to maintain a first pressure therein for a period of time, wherein the first pressure can be lower or higher than the critical pressure of the inert gas and the solution is expanded by the inert gas; further pressurizing the vessel with the inert gas and maintaining at a second pressure higher than the first pressure for a period of time, wherein the inert gas becomes sub-critical or supercritical fluid and dissolves more in the solution, creating an anti-solvent effect, so that the photosensitizing dye further deposits onto the metal oxide layer due to the anti-solvent effect. | 10-27-2011 |
20110269260 | Consumable Adhesive Layer for Thin Film Photovoltaic Material - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. The method forms a first electrode layer overlying the surface region of the transparent substrate. The method also forms a thin layer of indium material, using a sputtering target of indium material, overlying the first electrode layer to act as an intermediary glue layer to facilitate attachment to the first electrode layer. In a specific embodiment, the method forms a copper material overlying the thin layer of indium material. The method also forms an indium layer overlying the copper material to form a multi layered structure including at least the thin layer of indium material, copper material, and the indium layer. In a preferred embodiment, the multi-layered structure has a first thickness. In a specific embodiment, the method also subjects at least the multi-layered structure to thermal treatment process in an environment containing a sulfur bearing species to form a copper indium disulfide alloy material while consuming substantially all of the indium layer from at least the treatment process of the multi-layered structure. In a preferred embodiment, the copper indium disulfide alloy material comprises an atomic ratio of copper indium ranging from about 1.35 to about 3.00. In a specific embodiment, the copper indium disulfide alloy material has a second thickness of more than two times of the first thickness of the multi-layered structure. The method consumes substantially all of the thin layer of indium material into a portion of the copper indium disulfide alloy material during at least the thermal treatment process. The method causes formation of a copper sulfide material overlying the copper indium disulfide alloy material during at least the thermal treatment process. | 11-03-2011 |
20120115271 | LOW TEMPERATURE SINTERING OF DYE-SENSITISED SOLAR CELLS - This invention relates to the field of dye-sensitized solar cells and discloses a method for reducing the temperature necessary for sintering the metal oxide paste coating the electrode. | 05-10-2012 |
20120171808 | ELECTROCHEMICAL CELL STRUCTURE AND METHOD OF FABRICATION - An electrochemical cell and a method of manufacturing the same are provided. The electrochemical cell comprising: a first conductive layer; a metal oxide layer formed on the first conductive layer, the metal oxide layer comprising a plurality of adjacent metal oxide cells, spaced from one another; a functional dye layer formed on the metal oxide layer; a second conductive layer; and an electrolyte between the functional dye layer and the second conductive layer, wherein at least one of the first and second conductive layers is transparent, and wherein the metal oxide layer is formed from a metal oxide particle dispersion liquid. | 07-05-2012 |
20120238053 | Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same - In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding | 09-20-2012 |
20120270361 | METHOD AND SYSTEM FOR LARGE SCALE MANUFACTURE OF THIN FILM PHOTOVOLTAIC DEVICES USING MULTI-CHAMBER CONFIGURATION - A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. | 10-25-2012 |
20120276682 | METHOD AND SYSTEM FOR LARGE SCALE MANUFACTURE OF THIN FILM PHOTOVOLTAIC DEVICES USING SINGLE-CHAMBER CONFIGURATION - A system for large scale manufacture of thin film photovoltaic cells includes a chamber comprising a plurality of compartments in a common vacuum ambient therein. Additionally, the system includes one or more shutter screens removably separating each of the plurality of compartments. The system further includes one or more transfer tools configured to transfer a substrate from one compartment to another without breaking the common vacuum ambient. The substrate is optically transparent and is characterized by a lateral dimension of about 1 meter or greater for a solar module. Embodiments of the invention provide compartments configured to subject the substrate to one or more thin film processes to form a Cu-rich Cu—In composite material overlying the substrate and at least one of the plurality of compartments is configured to subject the Cu-rich Cu—In composite material to a thermal process to form a chalcogenide structured material. | 11-01-2012 |
20120276683 | METHOD FOR PREPARING TITANIA PASTES FOR USE IN DYE-SENSITIZED SOLAR CELLS - A new, more economical method for preparing titania pastes for use in more efficient dye-sensitized solar cells is disclosed. The titania pastes are prepared by mixing titania nanoparticles with a titania sol including a titanium precursor. The disclosed method enables the control of titania nanoparticle concentration and morphology in the titania paste and is economical due to the relatively low reaction temperatures. The performances of dye-sensitized solar cells prepared using the disclosed titania pastes are also disclosed. | 11-01-2012 |
20120302001 | Ultraviolet Sensor - A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively. | 11-29-2012 |
20130011958 | PHOTOVOLTAIC DEVICES FABRICATED FROM NANOSTRUCTURED TEMPLATE - Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture having a nanostructured template made from an n-type first charge transfer material with template elements between about 1 nm and about 500 nm in diameter with about 10 | 01-10-2013 |
20130029451 | METHOD FOR MAKING A SOLAR CELL - A method for making a solar cell includes: (a) forming over a substrate a photoelectric transformation layer that is made of a chalcopyrite-based photovoltaic material; (b) performing an ion milling treatment, in which ions are injected to an upper surface of the photoelectric transformation layer at an ion incident angle with respect to the upper surface to partially etch the photoelectric transformation layer, so that the photoelectric transformation layer is formed with a plurality of nano-pillar structures, the ion incident angle ranging from 0° to 90°; and (c) forming an electrode unit to transmit electricity from the photoelectric transformation layer. | 01-31-2013 |
20130237006 | DYE-SENSITIZED SOLAR CELL AND METHOD OF FABRICATING THE SAME - Provided are a dye-sensitized solar cell and a method of fabricating the same. The dye-sensitized solar cell includes an electrode structure including a conductive layer having pores that are regularly arranged, a semiconductor oxide layer disposed on a surface of the conductive layer, and a dye layer disposed on a surface of the semiconductor oxide layer. | 09-12-2013 |
20140065761 | COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD OF FORMING P-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | 03-06-2014 |
20140134782 | ULTRAVIOLET SENSOR AND METHOD FOR MANUFACTURING THE SAME - An ultraviolet sensor that includes a p-type semiconductor layer principally composed of (Ni, Zn)O, an n-type semiconductor layer composed of ZnO which is joined to the p-type semiconductor layer, an internal electrode embedded in the p-type semiconductor layer, and first and second terminal electrodes formed at both ends of the p-type semiconductor layer. The surface roughness of the p-type semiconductor layer is 1.5 μm or less, and preferably 0.3 μm or more and 1.0 μm or less. In a manufacturing process, the formed product prior to firing and/or the p-type semiconductor layer after firing is polished by barrel polishing so that the surface roughness Ra thereof is 1.0 μm or less. Thereby, light absorption efficiency can be improved to directly detect a desired large photocurrent and secure high reliability, and a spectral property can be controlled to strongly respond to various wavelength bands of ultraviolet light. | 05-15-2014 |
20140206131 | METHOD FOR FABRICATING AN INTERLAYER - The present invention relates to a method for fabricating an interlayer, and particularly relates to a method for fabricating an interlayer PCBM which is difficult to be dissolved in organic solvents. The solubility of the interlayer (PCBM) in organic solvents is decreased by polymerization of the interlayer (PCBM). Therefore, the thickness of the interlayer (PCBM) can be efficiently controlled, and the yield rate and efficiency of photoelectric devices can be improved. | 07-24-2014 |
20140273333 | Methods for fabricating ZnOSe alloys - Methods of forming absorber layers in a TFPV device are provided. Methods are described to provide the formation of metal oxide films and heating the metal oxide films in the presence of a chalcogen to form a metal-oxygen-chalcogen alloy. Methods are described to provide the formation of metal oxide films, forming a layer of elemental chalcogen on the metal oxide film, and heating the stack to form a metal-oxygen-chalcogen alloy. In some embodiments, the metal oxide film includes zinc oxide and the chalcogen includes selenium. | 09-18-2014 |
20150011041 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A circuit layer is formed on a surface of a substrate and includes a transistor. A photoelectric conversion element includes a photoelectric conversion layer of a chalcopyrite-type semiconductor provided between a first electrode and a second electrode. A supply layer is formed between the circuit layer and the photoelectric conversion layer and contains an Ia group element. Diffusion of the Ia group element to the photoelectric conversion layer improves the photoelectric conversion efficiency. A protective layer is formed between the supply layer and the circuit layer and prevents the diffusion of the Ia group element to the circuit layer. | 01-08-2015 |
20150140723 | MICROWAVE CURING OF MULTI-LAYER COATINGS - A method for providing a coated strip, which includes the steps of providing a metal or metal alloy strip, applying one or more coating layers on the metal or metal alloy strip and irradiating one or more of the applied coating layers with electromagnetic radiation, wherein one or more of the applied coating layers includes dielectric particles capable of absorbing microwave radiation and wherein microwave radiation is used to selectively heat one or more of the coating layers containing the dielectric particles to dry and/or cure and/or sinter the coating layer. | 05-21-2015 |
20160005916 | Method of Making Photovoltaic Devices - A method of making a photovoltaic device is presented. The method includes disposing a capping layer on a transparent conductive oxide layer, wherein the capping layer includes elemental magnesium, a magnesium alloy, a binary magnesium oxide, or combinations thereof. The method further includes disposing a window layer on the capping layer; and forming an interlayer between the transparent conductive oxide layer and the window layer, wherein the interlayer includes magnesium. | 01-07-2016 |
20160181462 | APPARATUS AND METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT | 06-23-2016 |
20170236971 | METHOD FOR FORMING THIN FILM CHALCOGENIDE LAYERS | 08-17-2017 |
438086000 | And cadmium sulfide compound semiconductive component | 12 |
20110189813 | METHOD FOR FABRICATING COPPER/INDIUM/GALLIUM/SELENIUM SOLAR CELL BY WET PROCESS UNDER NON-VACUUM CONDITION - A method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition is provided. In the method for fabricating a copper/indium/gallium/selenium solar cell by a wet process under non-vacuum condition, a substrate having a backside electrode layer is provided, and then a first transparent conduction oxide (TCO) layer, a copper/indium/gallium/selenium layer and a cadmium sulfide layer, a zinc oxide layer, and a second TCO layer are sequentially formed on the backside electrode layer by using a first TCO layer forming process, a copper/indium/gallium/selenium layer and a cadmium sulfide layer forming process, a zinc oxide layer forming process, and a second TCO layer forming process to form the copper/indium/gallium/selenium solar cell with a high conversion efficiency, wherein the first TCO layer forming process, the zinc oxide layer forming process, and the second TCO layer forming process respectively comprise a laser cutting process to individually perform laser cutting and scraping knife cutting for the work piece such that the segmented work pieces are formed for increasing the integration of process and the quality of production. | 08-04-2011 |
20110287574 | BULK SODIUM SPECIES TREATMENT OF THIN FILM PHOTOVOLTAIC CELL AND MANUFACTURING METHOD - A method for forming a thin film photovoltaic device is provided. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A chalcopyrite material is formed overlying the first electrode layer. In a specific embodiment, the chalcopyrite material comprises a copper poor copper indium disulfide region. The copper poor copper indium disulfide region having an atomic ratio of Cu:In of about 0.95 and less. The method includes compensating the copper poor copper indium disulfide region using a sodium species to cause the chalcopyrite material to change from an n-type characteristic to a p-type characteristic. The method includes forming a window layer overlying the chalcopyrite material and forming a second electrode layer overlying the window layer. | 11-24-2011 |
20110287575 | SULFIDE SPECIES TREATMENT OF THIN FILM PHOTOVOLTAIC CELL AND MANUFACTURING METHOD - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region, forming a first electrode layer overlying the surface region, forming a copper layer overlying the first electrode layer and forming an indium layer overlying the copper layer to form a multi-layered structure. The multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a copper indium disulfide material. The copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2:1 to about 2:1 and a thickness of substantially copper sulfide material having a copper sulfide surface region. The thickness of the copper sulfide material is selectively removed to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a sulfide species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic. A window layer is formed overlying the copper indium disulfide material. | 11-24-2011 |
20110287576 | BULK COPPER SPECIES TREATMENT OF THIN FILM PHOTOVOLTAIC CELL AND MANUFACTURING METHOD - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subject at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material includes one or more portions of copper indium disulfide material characterized by a copper-to-indium atomic ratio of less than about 0.95:1 and a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface and one or more portions of the bulk copper indium disulfide material to copper species to convert the copper poor surface from an n-type characteristic to a p-type characteristic and to convert any of the one or more portions of the bulk copper indium disulfide material having the copper-to-indium atomic ratio of less than about 0.95:1 from a p-type characteristic to an n-type characteristic. A window layer is formed overlying the copper indium disulfide material. | 11-24-2011 |
20110312122 | METAL SPECIES SURFACE TREATMENT OF THIN FILM PHOTOVOLTAIC CELL AND MANUFACTURING METHOD - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate including a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species and form a copper indium disulfide material. The copper indium disulfide material includes a thickness of substantially copper sulfide material. The thickness of the copper sulfide material is removed to expose a surface region having a copper poor surface characterized by a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a metal cation species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic. A window layer is formed overlying the copper indium disulfide material. | 12-22-2011 |
20120100664 | FABRICATING KESTERITE SOLAR CELLS AND PARTS THEREOF - A Kesterite film is vacuum deposited and annealed on a substrate. Deposition is conducted at low temperature to provide good composition control and efficient use of metals. Annealing is conducted at a high temperature for a short period of time. Thermal evaporation, E-beam evaporation or sputtering in a high vacuum environment may be employed as part of a deposition process. | 04-26-2012 |
20120315721 | METHODS OF MANUFACTURING A SOLAR CELL MODULE - Methods of manufacturing a solar cell module are provided. The method may include forming lower electrodes on a substrate, forming a light absorption layer on the lower electrodes and the substrate, patterning the light absorption layer to form a trench exposing the lower electrodes, and forming window electrodes using a conductive film. The conductive film extends from a top surface of the light absorption layer to a bottom of the trench along one-sidewall of the trench and is divided at another-sidewall of the trench. | 12-13-2012 |
20130005073 | Chemical Bath Deposition Apparatus for Fabrication of Semiconductor Films - A chemical bath deposition method and a system are presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition system deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited with continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The apparatus is designed to generate a minimum amount of waste solutions for chemical treatments. | 01-03-2013 |
20130089946 | WAVELENGTH CONVERSION FILM HAVING PRESSURE SENSITIVE ADHESIVE LAYER TO ENHANCE SOLAR HARVESTING EFFICIENCY - Described herein are wavelength conversion films that are easy-to-apply to solar cells, solar panels, or photovoltaic devices using an adhesive layer. The wavelength conversion films include a wavelength conversion layer with a photostable chromophore and are useful for improving the solar harvesting efficiency of solar cells, solar panels, and photovoltaic devices. | 04-11-2013 |
20130330874 | CHEMICAL BATH DEPOSITION METHOD FOR FABRICATION OF SEMICONDUCTOR FILMS - A chemical bath deposition method is presented to prepare different thin films on plane substrates. In particular, they are useful to deposit CdS or ZnS buffer layers in manufacture of thin film solar cells. This method and the deposition apparatus deposit thin films onto vertically travelling plane workpieces delivered by a conveyor belt. The thin films are deposited by continuously spraying the reaction solutions from their freshly mixed styles to gradually aged forms until the designed thickness is obtained. The substrates and the solutions are heated to a reaction temperature. During the deposition processes, the front surfaces of the substrates are totally covered with the sprayed solutions but the substrate backsides are remained dry. The reaction ambience inside the reactor can be isolated from the outside atmosphere. The method is designed to generate a minimum amount of waste solutions for chemical treatments. | 12-12-2013 |
20130337600 | METHOD OF PROCESSING A SEMICONDUCTOR ASSEMBLY - A method for processing a semiconductor assembly is presented. The method includes thermally processing a semiconductor assembly in a non-oxidizing atmosphere at a pressure greater than about 10 Torr. The semiconductor assembly includes a semiconductor layer disposed on a support, and the semiconductor layer includes cadmium and sulfur. | 12-19-2013 |
20140038344 | THIN FILM SOLAR CELLS - Embodiments relate to a method including forming a layer of copper zinc tin sulfide (CZTS) on a first layer of molybdenum (Mo) and annealing the CZTS layer and the first Mo layer to form a layer of molybdenum disulfide (MoS | 02-06-2014 |