Class / Patent application number | Description | Number of patent applications / Date published |
438063000 | Particulate semiconductor component | 18 |
20090275165 | PROCESS FOR FABRICATING A HIGH-INTEGRATION-DENSITY IMAGE SENSOR - The invention relates to the fabrication of an electronic component having a very high integration density, notably an image sensor. The component comprises two, superposed integrated circuits, one of which one (the image sensor) is formed on the front side of a thinned first silicon substrate ( | 11-05-2009 |
20100029032 | Method for Fabricating Image Sensor - A method for fabricating an image sensor is provided. In the image sensor fabrication method, an interconnection and a dielectric interlayer are formed on a semiconductor substrate including a readout circuit. An image sensing unit is formed on a carrier substrate of one side of a dielectric layer. The carrier substrate and the dielectric interlayer are bonded to each other. The dielectric layer and the carrier substrate are removed to leave the image sensing unit on the dielectric interlayer. | 02-04-2010 |
20100068845 | PHOTODETECTOR USING NANOPARTICLES - The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof. | 03-18-2010 |
20100081228 | NANOSTRUCTURED QUANTUM DOTS OR DASHES IN PHOTOVOLTAIC DEVICES AND METHODS THEREOF - A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove. | 04-01-2010 |
20100197068 | Hybrid Transparent Conductive Electrode - Methods and devices are provided for improved photovoltaic devices. In one embodiment, the transparent electrode of a thin-film solar cell is replaced in part by a sheet of nanowires. One technique for use in present invention comprises forming a solar cell having: a) a thinner than usual transparent top electrode of a conductive material having a reduced thickness and b) an interconnected network of nanowires in contact with and/or coated by the top electrode. In some embodiments, the top electrode and network of nanowires increases overall power output of the solar cell compared to an otherwise identical cell using only a) a top electrode layer of the material at a thickness and light transmission equal to a combined thickness and light transmission of the top electrode and the network of nanowires, or b) an interconnected network of nanowires of thickness equal to the combined thickness and light transmission. | 08-05-2010 |
20100240167 | Quantum confinement solar cell fabricated by atomic layer deposition - The current invention provides a method of fabricating quantum confinement (QC) in a solar cell that includes using atomic layer deposition (ALD) for providing at least one QC structure embedded into an intrinsic region of a p-i-n diode in the solar cell, where optical and electrical properties of the confinement structure are adjusted according to at least one dimension of the confinement structure. The QC structures can include quantum wells, quantum wires, quantum tubes, and quantum dots. | 09-23-2010 |
20110136289 | PHOTODETECTOR USING NANOPARTICLES - The present invention relates to a photodetector using nanoparticles, and more particularly, to a novel photodetector wherein surfaces of nanoparticles synthesized by a wet colloidal process are capped with organic materials which then serve as channels for electron migration, or nanoparticles, from which organic materials capped on the surfaces of nanoparticles are removed to form a close-packed particle structure, directly serve to transport electrons. In accordance with specific embodiments of the present invention, it is possible to improve performance of the photodetector and simplify the manufacturing process thereof. | 06-09-2011 |
20120003773 | QUANTUM DOT SENSITIZED WIDE BANDGAP SEMICONDUCTOR PHOTOVOLTAIC DEVICES & METHODS OF FABRICATING SAME - A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with E | 01-05-2012 |
20120045865 | Doped Graphene Films With Reduced Sheet Resistance - Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided. | 02-23-2012 |
20120100660 | METHOD FOR PREPARATION OF METAL CHALCOGENIDE SOLAR CELLS ON COMPLEXLY SHAPED SURFACES - Methods for fabricating a photovoltaic device on complexly shaped fabricated objects, such as car bodies are disclosed. Preferably the photovoltaic device includes absorber layers comprising Copper, Indium, Gallium, Selenide (CIGS) or Copper, Zinc, Tin, Sulfide (CZTS). The method includes the following steps: a colloidal suspension of metal surface-charged nanoparticles is formed; electrophoretic deposition is used to deposit the nanopartieles in a metal thin film onto a complexly shaped surface of the substrate; the metal thin film is heated in the presence of a chalcogen source to convert the metal thin film into a metal chalcogenide thin film layer; a buffer layer is formed on the metal chalcogenide thin film layer using a chemical bath deposition; an intrinsic zinc oxide insulating layer is formed adjacent to a side of the buffer layer, opposite the metal chalcogenide thin film layer, by chemical vapor deposition; and finally, a transparent conducting oxide is formed adjacent to a side of the intrinsic zinc oxide, opposite the buffer layer, by chemical vapor deposition. | 04-26-2012 |
20120100661 | INK FOR FORMING THIN FILM OF SOLAR CELLS AND METHOD FOR PREPARING THE SAME, CIGS THIN FILM SOLAR CELL USING THE SAME AND MANUFACTURING METHOD THEREOF - Discussed are an ink containing nanoparticles for formation of thin film of a solar cell and its preparation method, CIGS thin film solar cell having at least one light absorption layer formed by coating or printing the above ink containing nanoparticles on a rear electrode, and a process for manufacturing the same. More particularly, the above absorption layer includes Cu, In, Ga and Se elements as constitutional ingredients thereof and such elements exist in the light absorption layer by coating or printing an ink that contains Cu | 04-26-2012 |
20130244366 | THREE-DIMENSIONAL BICONTINUOUS HETEROSTRUCTURES, METHOD OF MAKING, AND THEIR APPLICATION IN QUANTUM DOT-POLYMER NANOCOMPOSITE PHOTODETECTORS AND PHOTOVOLTAICS - The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biocontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor. | 09-19-2013 |
20140051201 | SILICON SURFACE TEXTURING METHOD FOR REDUCING SURFACE REFLECTANCE - A method of texturing a surface of a crystalline silicon substrate is provided. The method includes immersing a crystalline silicon substrate into an aqueous alkaline etchant solution to form a pyramid shaped textured surface, with (111) faces exposed, on the crystalline silicon substrate. The aqueous alkaline etchant solution employed in the method of the present disclosure includes an alkaline component and a nanoparticle slurry component. Specifically, the aqueous alkaline etchant solution of the present disclosure includes 0.5 weight percent to 5 weight percent of an alkaline component and from 0.1 weight percent to 5 weight percent of a nanoparticle slurry on a dry basis. | 02-20-2014 |
20140295609 | SOLAR CELL EMITTER REGION FABRICATION USING SILICON NANO-PARTICLES - Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer. | 10-02-2014 |
20150024539 | FORMULATION OF COLLOIDAL TITANIUM-OXIDE SOLUTIONS COMPOSITION FOR COATING AND PRINTING METHODS, AND IMPROVEMENT OF THE OUTPUT AND LIFESPAN OF ORGANIC P-I-N/N-I-P PHOTOVOLTAIC CELLS - The invention relates to a method for preparing a colloidal nanoparticle solution, including: (a) dissolving a titanium-oxide precursor, referred to as a precursor, in one or more solvents, referred to as precursor solvents; and (b) chemically converting, preferably by means of hydrolysis, said titanium-oxide precursor and said precursor solvent into a colloidal-solution solvent so as to form titanium-oxide nanoparticles that are dispersed in the colloidal-solution solvent, said colloidal solution having a dynamic viscosity of between 4 and 54 cP at 20° C. and 101,325 Pa. | 01-22-2015 |
20150079720 | Inorganic Salt-Nanoparticle Ink for Thin Film Photovoltaic Devices and Related Methods - Compositions for solution-based deposition of CIGS films are described. The compositions include ternary, quaternary or quinary chalcogenide nanoparticles (i.e., CIGS nanoparticles) and one or more inorganic salts dissolved or dispersed in a solvent to form an ink. The ink can be deposited on a substrate by conventional coating techniques and then annealed to form a crystalline layer. Further processing can be employed to fabricate a PV device. The inorganic salts are included to (i) tune the stoichiometry of the CIGS precursor ink to a desirable ratio, thus tuning the semiconductor band gap, to (ii) dope the CIGS layer with additives, such as Sb and/or Na, to promote grain growth, and/or to (iii) modify and improve the coating properties of the CIGS precursor ink. | 03-19-2015 |
20160071999 | SOLAR CELL EMITTER REGION FABRICATION USING SILICON NANO-PARTICLES - Methods of fabricating solar cell emitter regions using silicon nano-particles and the resulting solar cells are described. In an example, a method of fabricating an emitter region of a solar cell includes forming a region of doped silicon nano-particles above a dielectric layer disposed above a surface of a substrate of the solar cell. A layer of silicon is formed on the region of doped silicon nano-particles. At least a portion of the layer of silicon is mixed with at least a portion of the region of doped silicon nano-particles to form a doped polycrystalline silicon layer disposed on the dielectric layer. | 03-10-2016 |
20160172513 | COMPOSITE QUANTUM-DOT MATERIALS FOR PHOTONICS DETECTORS | 06-16-2016 |