| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438056000 | Responsive to corpuscular radiation (e.g., nuclear particle detector, etc.) | 10 |
| 20080318357 | ALPHA VOLTAIC BATTERIES AND METHODS THEREOF - An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material. | 12-25-2008 |
| 20110086456 | Betavoltaic battery with a shallow junction and a method for making same - This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+N | 04-14-2011 |
| 20110287567 | Betavoltaic battery with a shallow junction and a method for making same - This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+N | 11-24-2011 |
| 20120122260 | ARRAY OF ALPHA PARTICLE SENSORS - An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within | 05-17-2012 |
| 20120149142 | Betavoltaic battery with a shallow junction and a method for making same - This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+ N | 06-14-2012 |
| 20130267056 | MANUFACTURING METHOD OF ELECTRON MULTIPLIER SUBSTRATE, MANUFACTURING METHOD OF ELECTRON MULTIPLIER AND MANUFACTURING METHOD OF RADIATION DETECTOR - An underlayer is formed on a side wall | 10-10-2013 |
| 20130344636 | METHOD OF FABRICATING A NEUTRON DETECTOR SUCH AS A MICROSTRUCTURED SEMICONDUCTOR NEUTRON DETECTOR - A method of making a neutron detector such as a microstructured semiconductor neutron detector is provided. The method includes the step of providing a particle-detecting substrate having a surface and a plurality of cavities extending into the substrate from the surface. The method also includes filling the plurality of cavities with a neutron-responsive material. The step of filling including the step of centrifuging nanoparticles of the neutron-responsive material with the substrate for a time and a rotational velocity sufficient to backfill the cavities with the nanoparticles. The material is responsive to neutrons absorbed, thereby, for releasing ionizing radiation reaction products | 12-26-2013 |
| 20140080243 | METHOD OF MANUFACTURING RADIATION DETECTOR - A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon. | 03-20-2014 |
| 20140329351 | FABRICATING A SMALL-SCALE RADIATION DETECTOR - A method for a constructing radiation detector includes fabricating a multi-layer structure upon a wafer, the multi-layer structure comprising a plurality of metal layers, a plurality of sacrificial layers, and a plurality of insulating layers, forming a cavity within the multi-layer structure, filling the cavity with a gas that ionizes in response to nuclear radiation, and sealing the gas within the cavity. | 11-06-2014 |
| 20150380593 | NEUTRON-DETECTING APPARATUSES AND METHODS OF FABRICATION - Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure. | 12-31-2015 |
