| Entries |
| Document | Title | Date |
|---|
| 20080227234 | Method of manufacturing a semiconductor device - A semiconductor device is manufactured in a silicon-on-insulator (SOI) wafer having an silicon active layer, a buried oxide layer, and a supporting substrate layer. Before the wafer is diced into chips along scribe lines, the silicon active layer is selectively etched to form trenches surrounding the scribe lines. The wafer is then diced using a dicing apparatus having a blade width smaller than the width of the trenches. The dicing blade accordingly does not make contact with the silicon active layer, which is particularly vulnerable to chipping. | 09-18-2008 |
| 20080241984 | METHOD FOR MANUFACTURING SEMICONDCUTOR SENSOR - A semiconductor sensor is disclosed that includes a substrate including at least a semiconductor layer. The substrate includes a weight arranging part in the vicinity of the center of the substrate, a flexible part around the weight arranging part, and supporting parts provided around the flexible part. The semiconductor sensor further includes a weight arranged on the weight arranging part. The weight is made of a material different from that of the weight arranging part and the flexible parts. | 10-02-2008 |
| 20080261343 | VACUUM PACKAGED SINGLE CRYSTAL SILICON DEVICE - A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices. | 10-23-2008 |
| 20080261344 | VACUUM PACKAGED SINGLE CRYSTAL SILICON DEVICE - A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices. | 10-23-2008 |
| 20080274576 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for improving productivity when manufacturing a semiconductor device. A lower electrode, insulating films, an upper electrode and insulating films are formed on a semiconductor substrate in a sensor region. A cavity is formed between the insulator films above the lower electrode. The lower electrode, insulating film, the cavity and insulating film, and an upper electrode form a variable capacity sensor. The cavity is formed by etching a sacrificial pattern between the insulation films by way of a hole formed in a pair of insulation films. Other than in the above sensor region, a dummy lower electrode and four insulating films are formed on the TEG region on the semiconductor substrate; and a dummy cavity is formed between a pair of insulation films above the lower electrode however no conductive layer on the same layer as the upper electrode is formed on the dummy cavity. | 11-06-2008 |
| 20080318356 | SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME - It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips. | 12-25-2008 |
| 20090004766 | Method for Producing Electronic Components and Pressure Sensor - A method produces electronic components in particular electronic sensors for pressure and differential pressure measurement. Firstly, the semiconductor structure of the electronic components is produced on a wafer. An insulating oxide layer is then applied. A protective metal layer is subsequently applied. The metal layer is applied in sections only in those regions of the wafer in which no splitting, for example by mechanical separation, occurs later. The electronic components thus formed in the wafer are then divided up into individual elements. | 01-01-2009 |
| 20090029500 | HERMETIC PACAKGING AND METHOD OF MANUFACTURE AND USE THEREFORE - An embodiment of the present invention provides a method of manufacturing hermetic packaging for devices on a substrate wafer, comprising forming a plurality of adhesive rings on a cap wafer or the substrate wafer, bonding the cap wafer to the substrate wafer with an adhesive layer, forming trenches in the cap wafer and the adhesive rings along outer rim of the adhesive rings, and covering sidewall of the trenches by at least one deposited film to provide a diffusion barrier to moisture or gas. | 01-29-2009 |
| 20090075415 | Method for manufacturing semiconductor device - The present invention provides a method for manufacturing a semiconductor device which has an integrated circuit provided on a semiconductor substrate and a movable part which is movable relative to the substrate. This manufacturing method includes: a step of covering the movable part with a sacrificial film; a step of covering the sacrificial film with a first sealing layer which is formed of a material having a tensile stress; a step of forming a through-hole in the first sealing layer; a step of removing the sacrificial film through the through-hole to form a void around the movable part; and a step of film-forming a second sealing layer on the first sealing layer to close the through-hole. | 03-19-2009 |
| 20090137079 | Method for manufacturing a microelectromechanical component, and a microelectromechanical component - The invention relates to microelectromechanical components, like microelectromechanical gauges used in measuring e.g. acceleration, angular acceleration, angular velocity, or other physical quantities. The microelectromechanical component, according to the invention, comprises a microelectromechanical chip part, sealed by means of a cover part, and an electronic circuit part, suitably bonded to each other. The aim of the invention is to provide an improved method of manufacturing a microelectromechanical component, and to provide a microelectromechanical component, which is applicable for use particularly in small microelectromechanical sensor solutions. | 05-28-2009 |
| 20090203163 | METHOD FOR MAKING A TRANSDUCER - A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer. The method also includes causing the bonding layer of the semiconductor-on-insulator wafer and the bonding layer of the substrate to bond together to thereby mechanically and electrically couple the semiconductor-on-insulator wafer and the substrate to form the transducer, wherein the electrical connection portions of the bonding layers of the semiconductor-on-insulator wafer and the substrate are fluidly isolated from the surrounding environment by the bonding layers. | 08-13-2009 |
| 20090215214 | Method of Sealing a Cavity - Embodiments disclosed herein generally include methods of sealing a cavity in a device structure. The cavity may be opened by etching away sacrificial material that may define the cavity volume. Material from below the cavity may be sputter etched and redeposited over and in passageways leading to the cavity to thereby seal the cavity. Material may be sputter etched from above the cavity and redeposited in the passageways leading to the cavity as well. The sputter etching may occur in a substantially inert atmosphere. As the sputter etching is a physical process, little or no sputter etched material will redeposit within the cavity itself. The inert gases may sweep out any residual gases that may be present in the cavity after the cavity has been opened. Thus, after the sputter etching, the cavity may be substantially filled with inert gases that do not negatively impact the cavity. | 08-27-2009 |
| 20090227060 | Method for Fabricating a Sealed Cavity Microstructure - A method for fabricating a sealed cavity microstructure comprises the steps of: forming an insulation layer with a micro-electro-mechanical structure on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one suspended structure and at least one conductive structure between which is disposed a spacer region; after an etching, filling a sacrificial layer into the spacer region and on the surface of the conductive structure; forming holes in the sacrificial layer correspondingly to the conductive structure; depositing a cap layer into the holes and the surface; after removing the sacrificial layer, utilizing the clearance of the cap layer to carry out a further etching to realize the suspension of the micro-electro-mechanical structure; and finally, utilizing a sealing layer to achieve the sealing effect. By such arrangements, the exposure of the micro-electro-mechanical structure can be effectively prevented, and the final package cost can be reduced. | 09-10-2009 |
| 20090233395 | Package of MEMS device and method for fabricating the same - A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array bumps arrayed on an outer side of the bonding bumps, and an MEMS device wafer over which a plurality of first outer pads are formed corresponding to the array bumps, wherein the array bumps are bonded to the respective outer pads when the cap wafer and the MEMS device wafer are bonded together. | 09-17-2009 |
| 20090275163 | System and Method of Encapsulation - Embodiments discussed herein generally include methods of fabricating MEMS devices within a structure. The MEMS device may be formed in a cavity above the structure, and additional metallization may occur above the MEMS device. The cavity may be formed by depositing an encapsulating layer over the sacrificial layers that enclose the MEMS device. The encapsulating layer may then be etched to expose portions of the sacrificial layers. The sacrificial layers are exposed because they extend through the sidewalls of the encapsulating layer. Therefore, no release holes are etched through the top of the encapsulating layer. An etchant then removes the sacrificial layers to free the MEMS device and form the cavity and an opening through the sidewall of the encapsulating layer. Another encapsulating layer may then be deposited to seal the cavity and the opening. | 11-05-2009 |
| 20090298215 | Method of Enclosing a Micro-Electromechanical Element - A method, in a complementary metal oxide semiconductor fabrication process, of creating a layered housing containing a micro-electromechanical system device, the method comprising the steps of providing a cavity in at least one layer of the housing, the cavity being accessible through via holes in a layer of insulating material deposited thereon, and the layer of insulating material being covered by a thin film layer of conductive material. The method further comprises the step of hydrophobically treating at least a portion of the inner surface of the cavity. Finally the method comprises the steps of submerging the wafer in an electroplating solution and electroplating a conductive layer onto the thin film layer of conductive material such that the cavity remains free of electroplating solution. | 12-03-2009 |
| 20090311819 | Method for Making Micro-Electromechanical System Devices - A method for making micro-electromechanical system devices includes: (a) forming a sacrificial layer on a device wafer; (b) forming a plurality of loop-shaped through-holes in the sacrificial layer so as to form the sacrificial layer into a plurality of enclosed portions; (c) forming a plurality of cover caps on the sacrificial layer such that the cover caps respectively enclose the enclosed portions of the sacrificial layer; (d) forming a device through-hole in each of active units of the device wafer so as to form an active part suspended in each of the active units; and (e) removing the enclosed portions of the sacrificial layer through the device through-holes in the active units of the device wafer. | 12-17-2009 |
| 20100022046 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film. | 01-28-2010 |
| 20100047949 | STACK TYPE SURFACE ACOUSTIC WAVE PACKAGE, AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a stack type surface acoustic wave package. The surface acoustic wave package comprises a first bare chip having a plurality of electrodes formed thereon, a second bare chip having a plurality of electrodes and via-holes formed thereon, a connecting portion electrically connecting the first bare chip to an upper surface of the second bare chip such that the electrodes of the first bare chip face the electrodes of the second bare chip, and a sealing member provided on the first and second bare chips to form an air-tight space on an operating surface between the first and second bare chips. The surface acoustic wave package can prevent deformation due to thermal impact from the outside during a packaging process, enhancing reliability of the product, minimizing the size of the product, and reducing manufacturing costs by reducing the number of components and material costs. | 02-25-2010 |
| 20100055821 | Method for manufacturing an intergrated pressure sensor - A differential pressure sensor comprises a membrane arranged over a cavity on a semiconductor substrate. A lid layer is arranged at the top side of the device and comprises an access opening for providing access to the top side of the membrane. A channel extends laterally from the cavity and intersects with a bore. The bore is formed by laser drilling from the bottom side of the substrate and provides access to the bottom side of the membrane. The bore extends all through the substrate and optionally into the lid layer. | 03-04-2010 |
| 20100068844 | Microcap Wafer Bonding Method and Apparatus - A method of fabricating an apparatus including a sealed cavity and an apparatus embodying the method are disclosed. To fabricate the apparatus, a device chip including a substrate and at least one circuit element on the substrate is fabricated. Also, a cap is fabricated. Next, the device chip and the cap are bonded such that a sealed cavity is formed by the device chip and the cap. The bond is accomplished using thermo compression technique. Gold or other suitable metal can be used as a bonding agent. Then or at the same time, caulking agent is reflowed over the bonding agent, over portions of the cap, or both to further seal the cavity. In the resultant device, the sealed cavity is sealed by the bonding agent, the caulking agent, or both. The caulking agent increases hermeticity of the cavity and provides for even higher level of protection of the cavity against adverse environmental conditions. | 03-18-2010 |
| 20100087024 | DEVICE CAVITY ORGANIC PACKAGE STRUCTURES AND METHODS OF MANUFACTURING SAME - Structured and Methods for integrating MEMS devices into low-cost organic chip-scale packages, using sealed cavities, are provided. | 04-08-2010 |
| 20100159627 | CRACK AND RESIDUE FREE CONFORMAL DEPOSITED SILICON OXIDE WITH PREDICTABLE AND UNIFORM ETCHING CHARACTERISTICS - A silicon oxide layer is formed by oxidation or decomposition of a silicon precursor gas in an oxygen-rich environment followed by annealing. The silicon oxide layer may be formed with slightly compressive stress to yield, following annealing, an oxide layer having very low stress. The silicon oxide layer thus formed is readily etched without resulting residue using HF-vapor. | 06-24-2010 |
| 20100197063 | Method of Manufacturing a Micro-Electrical-Mechanical System with Thermally Isolated Active Elements - A method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements. Such a system may embody a bolometer, which is well suited for detecting electromagnetic radiation between 90 GHz and 30 THz while operating at room temperature. The method also discloses a generalized process for manufacturing circuitry incorporating active and passive micro-electrical-mechanical systems in a silicon wafer. | 08-05-2010 |
| 20100197064 | SILICON-BASED RF SYSTEM AND METHOD OF MANUFACTURING THE SAME - A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate. | 08-05-2010 |
| 20100221860 | PRECISION MICRO-ELECTROMECHANICAL SENSOR (MEMS) MOUNTING IN ORGANIC PACKAGING - Apparatus and methods for mounting micro-electromechanical (MEMS) sensors in three dimensions, using horizontal and vertical substrates. | 09-02-2010 |
| 20100240163 | SUBSTRATE WITH MULTIPLE ENCAPSULATED PRESSURES - A method of forming a device with multiple encapsulated pressures is disclosed herein. In accordance with one embodiment of the present invention, there is provided a method of forming a device with multiple encapsulated pressures, including providing a substrate, forming a functional layer on top of a surface of the substrate, the functional layer including a first device portion at a first location, and a second device portion at a second location adjacent to the first location, encapsulating the functional layer, forming at least one diffusion resistant layer above the encapsulated functional layer at a location above the first location and not above the second location, modifying an environment adjacent the at least one diffusion resistant layer, and diffusing a gas into the second location as a result of the modified environment. | 09-23-2010 |
| 20100267182 | WAFER BONDING OF MICRO-ELECTRO MECHANICAL SYSTEMS TO ACTIVE CIRCUITRY - A single integrated wafer package includes a micro electromechanical system (MEMS) wafer, an active device wafer, and a seal ring. The MEMS wafer has a first surface and includes at least one MEMS component on its first surface. The active device wafer has a first surface and includes an active device circuit on its first surface. The seal ring is adjacent the first surface of the MEMS wafer such that a seal is formed about the MEMS component. An external contact is provided on the wafer package. The external contact is accessible externally to the wafer package and is electrically coupled to the active device circuit of the active device wafer. | 10-21-2010 |
| 20100267183 | METHOD FOR MANUFACTURING CAPPED MEMS COMPONENTS - A simple and economical method for manufacturing very thin capped MEMS components. In the method, a large number of MEMS units are produced on a component wafer. A capping wafer is then mounted on the component wafer, so that each MEMS unit is provided with a capping structure. Finally, the MEMS units capped in this way are separated to form MEMS components. A diaphragm layer is formed in a surface of the capping wafer by using a surface micromechanical method to produce at least one cavern underneath the diaphragm layer, support points being formed that connect the diaphragm layer to the substrate underneath the cavern. The capping wafer structured in this way is mounted on the component wafer in flip chip technology, so that the MEMS units of the component wafer are capped by the diaphragm layer. The support points are then cut through in order to remove the substrate. | 10-21-2010 |
| 20100279451 | DIRECT CONTACT HEAT CONTROL OF MICRO STRUCTURES - A method of providing thermal tuning of microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is disclosed. A heater is provided integrated with the MEMS for controllably heating the MEMS to control performance characteristics thereof. | 11-04-2010 |
| 20100285627 | MICRO-ELECTRO-MECHANICAL DEVICE AND MANUFACTURING METHOD FOR THE SAME - It is an object of the present invention to provide a micro-electro-mechanical-device having a microstructure and a semiconductor element over one surface. In particular, it is an object of the present invention to provide a method for simplifying the process of forming the microstructure and the semiconductor element over one surface. A space in which the microstructure is moved, that is, a movable space for the microstructure is formed by procecssing an insulating layer which is formed in a process of forming the semiconductor element. The movable space can be formed by forming the insulating layer having a plurality of openings and making the openings face each other to be overlapped each other. | 11-11-2010 |
| 20100304518 | Media-Compatible Electrically Isolated Pressure Sensor For High Temperature Applications - A method for manufacturing a Micro-Electro-Mechanical System pressure sensor. The method includes forming a gauge wafer including a diaphragm and a pedestal region. The method includes forming an electrical insulation layer disposed on a second surface of the diaphragm region and forming a plurality of sensing elements patterned on the electrical insulation layer disposed on the second surface in the diaphragm region. The method includes forming a cap wafer with a central recess in an inner surface and a plurality of through-wafer embedded vias made of an electrically conductive material in the cap wafer. The method includes creating a sealed cavity by coupling the inner recessed surface of the cap wafer to the gauge wafer, such that electrical connections from the sensing elements come out to an outer surface of the cap wafer through the vias. The method includes attaching a spacer wafer with a central aperture to the pedestal region with the central aperture aligned to the diaphragm region. | 12-02-2010 |
| 20110003422 | METHOD OF FORMING MONOLITHIC CMOS-MEMS HYBRID INTEGRATED, PACKAGED STRUCTURES - A method of forming Monolithic CMOS-MEMS hybrid integrated, packaged structures includes the steps of providing: providing at least one semiconductor substrate having a CMOS device area including dielectric layers and metallization layers; applying at least one protective layer overlying the CMOS device area; forming at least one opening on the protective layer and patterning the dielectric and metallization layers to access the semiconductor substrate; forming at least one opening on the semiconductor substrate by etching the dielectric and metallization layers; applying at least one filler layer in the at least one opening on the semiconductor substrate; positioning at least one chip on the filler layer, the chip including a prefabricated front face and a bare backside; applying a first insulating layer covering the front face of the chip providing continuity from the semiconductor substrate to the chip; forming at least one via opening on the insulating layer covering the chip to access at least one contact area; applying at least one metallization layer overlying the insulating layer on the substrate and the chip connecting the metallization layer on the substrate to the at least one another contact area on the chip; applying a second insulating layer overlying the metallization layer on the at least one chip; applying at least one interfacial layer; applying at least one rigid substrate overlying the interfacial layer; and applying at least one secondary protective layer overlying the rigid substrate. | 01-06-2011 |
| 20110014741 | THREE DIMENSIONAL STRUCTURE AND ITS MANUFACTURING METHOD - A plurality of micro three-dimensional structure elements each having a movable structure fixed on a sacrifice layer, and fixation portions of the micro three-dimensional structure elements for the sacrifice layer are arranged into a film-like elastic body, and then the sacrifice layer is removed. Thus, a three-dimensional structure in which the individual micro three-dimensional structure elements are arranged independently of one another within the elastic body is manufactured. | 01-20-2011 |
| 20110027930 | Low Temperature Wafer Level Processing for MEMS Devices - Microelectromechanical systems (MEMS) are small integrated devices or systems that combine electrical and mechanical components. It would be beneficial for such MEMS devices to be integrated with silicon CMOS electronics and packaged in controlled environments and support industry standard mounting interconnections such as solder bump through the provisioning of through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and stresses placed on metallization membranes are not present in packaging conventional CMOS electronics. Accordingly there is provided a means of reinforcing the through-wafer vias for such integrated MEMS-CMOS circuits by in filling a predetermined portion of the through-wafer electrical vias with low temperature deposited ceramic materials which are deposited at temperatures below 350° C., and potentially to below 250° C., thereby allowing the re-inforcing ceramic to be deposited after fabrication of the CMOS electronics. | 02-03-2011 |
| 20110033967 | Methods for trapping charge in a microelectromechanical system and microelectromechanical system employing same - Many inventions are disclosed. Some aspects are directed to MEMS, and/or methods for use with and/or for fabricating MEMS, that supply, store, and/or trap charge on a mechanical structure disposed in a chamber. Various structures may be disposed in the chamber and employed in supplying, storing and/or trapping charge on the mechanical structure. In some aspects, a breakable link, a thermionic electron source and/or a movable mechanical structure are employed. The breakable link may comprise a fuse. In one embodiment, the movable mechanical structure is driven to resonate. In some aspects, the electrical charge enables a transducer to convert vibrational energy to electrical energy, which may be used to power circuit(s), device(s) and/or other purpose(s). In some aspects, the electrical charge is employed in changing the resonant frequency of a mechanical structure and/or generating an electrostatic force, which may be repulsive. | 02-10-2011 |
| 20110053304 | METHOD OF MAKING AN ELECTRONIC DEVICE WITH A CURVED BACKPLATE - A package is made of a transparent substrate having an interferometric modulator and a back plate. A non-hermetic seal joins the back plate to the substrate to form a package, and a desiccant resides inside the package. A method of packaging an interferometric modulator includes providing a transparent substrate and manufacturing an interferometric modulator array on a backside of the substrate. A back plate includes a curved portion relative to the substrate. The curved portion is substantially throughout the back plate. The back plate is sealed to the backside of the substrate with a back seal in ambient conditions, thereby forming a package. | 03-03-2011 |
| 20110059567 | MEMS device package with vacuum cavity by two-step solder reflow method - In a method of vacuum packaging a MEMS device, at least one MEMS device is attached on a substrate. A solder preform is printed on the substrate at the perimeter surrounding the substrate. A lid is attached to the solder preform wherein the lid provides a cavity enclosing the at least one MEMS device. A first reflowing step reflows the solder at a first temperature, partially sealing the lid/substrate interface and at the same time does the outgassing and baking procedure for the packaging. Flux is applied onto an outer ring of the solder preform and a second step reflows the solder at a second temperature, completely sealing the lid/substrate interface and providing a vacuum cavity enclosing the at least one MEMS device. | 03-10-2011 |
| 20110092009 | PACKAGE, IN PARTICULAR FOR MEMS DEVICES AND METHOD OF MAKING SAME - A package includes a substrate provided with a passing opening and a MEMS device. The MEMS device includes an active surface wherein a portion of the MEMS device is integrated sensitive to the chemical/physical variations of a fluid. The active surface of the MEMS device faces the substrate and is spaced therefrom, the sensitive portion being aligned to the passing opening. A protective package incorporates the MEMS device and the substrate, leaving at least the sensitive portion of the MEMS device exposed through the passing opening of the substrate. | 04-21-2011 |
| 20110124143 | PACKAGED DEVICE AND METHOD OF MANUFACTURING THE SAME - A packaged device includes a package having an inner surface defining a closed internal space, a device chip fixed to the package in the internal space, and a parylene film covering at least a part of the inner surface of the package and/or at least a part of a surface of the device chip. | 05-26-2011 |
| 20110143476 | ELECTRICAL COUPLING OF WAFER STRUCTURES - A method for electrically coupling a first wafer with a second wafer is provided. The method includes bonding the first wafer with the second wafer using a bonding material. The method further includes forming an opening in the first wafer in a scribe area of the second wafer to expose a surface of a conductive structure of the second wafer. The method further includes forming a conductive layer overlying the first wafer and the opening in the first wafer such that the conductive layer forms an electrical contact with the conductive structure of the second wafer thereby electrically coupling the first wafer with the second wafer. | 06-16-2011 |
| 20110151608 | CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER AND MANUFACTURING METHOD - The integrated circuit/transducer device of the preferred embodiment includes a substrate, a complementary-metal-oxide-semiconductor (CMOS) circuit that is fabricated on the substrate, and a capacitive micromachined ultrasonic transducer (cMUT) element that is also fabricated on the substrate. The CMOS circuit and cMUT element are fabricated during the same foundry process and are connected. The cMUT includes a lower electrode, an upper electrode, a membrane structure that support the upper electrode, and a cavity between the upper electrode and lower electrode. | 06-23-2011 |
| 20110165718 | Integrated getter area for wafer level encapsulated microelectromechanical systems - There are many inventions described and illustrated herein. In one aspect, present invention is directed to a thin film encapsulated MEMS, and technique of fabricating or manufacturing a thin film encapsulated MEMS including an integrated getter area and/or an increased chamber volume, which causes little to no increase in overall dimension(s) from the perspective of the mechanical structure and chamber. The integrated getter area is disposed within the chamber and is capable of (i) “capturing” impurities, atoms and/or molecules that are out-gassed from surrounding materials and/or (ii) reducing and/or minimizing the adverse impact of such impurities, atoms and/or molecules (for example, reducing the probability of adding mass to a resonator which would thereby change the resonator's frequency). In this way, the thin film wafer level packaged MEMS of the present invention includes a relatively stable, controlled pressure environment within the chamber to provide, for example, a more stable predetermined, desired and/or selected mechanical damping of the mechanical structure. | 07-07-2011 |
| 20110177643 | FABRICATION METHOD OF PACKAGE STRUCTURE HAVING MEMS ELEMENT - A fabrication method of a package structure having at least an MEMS element is provided, including: preparing a wafer having electrical connection pads and the at least an MEMS element; disposing lids for covering the at least an MEMS element, the lids having a metal layer formed thereon; electrically connecting the electrical connection pads and the metal layer with bonding wires; forming an encapsulant for covering the lids, bonding wires, electrical connection pads and metal layer; removing portions of the encapsulant to separate the bonding wires each into first and second sub-bonding wires, wherein top ends of the first and second sub-bonding wires are exposed, the first sub-bonding wires electrically connecting to the electrical connection pads, and the second sub-bonding wires electrically connecting to the metal layer; forming metallic traces on the encapsulant for electrically connecting to the first sub-bonding wires; forming bumps on the metallic traces; and performing a singulation process. | 07-21-2011 |
| 20110183455 | Micro-Electro-Mechanical System (MEMS) Sensor and Method for Making Same - The present invention discloses an MEMS sensor and a method for making the MEMS sensor. The MEMS sensor according to the present invention comprises: a substrate including an opening; a suspended structure located above the opening; and an upper structure, a portion of which is at least partially separated from a portion of the suspended structure; wherein the suspended structure and the upper structure are separated from each other by a step including metal etch. | 07-28-2011 |
| 20110212563 | Apparatus and Method of Wafer Bonding Using Compatible Alloy - A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors. | 09-01-2011 |
| 20110306158 | METHOD OF FORMING SUSPENSION OBJECT ON MONOLITHIC SUBSTRATE - A method of forming a suspension object on a monolithic substrate is provided. A silicon base layer of the monolithic substrate has a circuit layer composed of at least one wet etching region, at least one circuit region, and at least one microstructure region. The wet etching region is used to partition the circuit region and the microstructure region, and extends downwards to a surface of the silicon base layer, so as to form an etching path for etching the silicon base layer from above the substrate. Next, an upper surface and a lower surface of the silicon base layer are respectively etched through dry etching, such that the microstructure region is suspended. | 12-15-2011 |
| 20120009712 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - A method for forming a chip package includes: providing a substrate having a first and a second surfaces; removing a portion of the substrate to form openings in the substrate, wherein the openings extend from the first surface towards the second surface or from the second surface towards the first surface; after forming the openings, at least a first portion of the substrate serves as a first movable bulk, and at least a second portion of the substrate serves as a second movable bulk, wherein the first movable bulk and the second movable bulk are respectively located between the openings; disposing a protecting substrate on the second surface of the substrate; forming a through-hole in the protecting substrate; and forming a conducting layer on the protecting substrate, wherein the conducting layer extends from a surface of the protecting substrate into the through-hole to electrically connect the second movable bulk. | 01-12-2012 |
| 20120009713 | MAKING OF A MICROELECTRONIC DEVICE INCLUDING A MONOCRYSTALLINE SILICON NEMS COMPONENT AND A TRANSISTOR THE GATE OF WHICH IS MADE IN THE SAME LAYER AS THE MOBILE STRUCTURE OF THIS COMPONENT - A method for making a microelectronic device including, on a same substrate, at least one electro-mechanical component including a mobile structure of a monocrystalline semi-conductor material and a mechanism actuating and/or detecting the mobile structure, and with at least one transistor. The method a) provides a substrate including at least one first semi-conducting layer including at least one region in which a channel area of the transistor is provided, b) etches a second semi-conducting layer based on a given semi-conductor material, lying on an insulating layer placed on the first semi-conducting layer, to form at least one pattern of the mobile structure of the component in an area of monocrystalline semi-conductor material of the second semi-conducting layer, and at least one pattern of gate of the transistor on a gate dielectric area located facing the given region. | 01-12-2012 |
| 20120015468 | SURFACE MOUNT MEMS DEVICE STRUCTURE AND FABRICATING METHOD THEREOF FOR CRYSTAL OSCILLATORS - A method of fabricating surface mount micro electro mechanical systems (MEMS) device includes forming SMD MEMS crystal oscillator devices on wafer and forming its bonding structure, also can either use lithographic packing process or single package mount bonding crystal blanks packing process. The method further includes embedded crystal device into the integrated circuit, it effectively to eliminate the use of extra the discrete components, reduced the fabrication cost and fail rate for system in package (SIP) or chip on board (COB) packing. | 01-19-2012 |
| 20120070931 | METHODS FOR REDUCED STRESS ANCHORS - Methods of anchoring components of a Micro-Electro-Mechanical Systems (MEMS) device to a substrate. An exemplary embodiment has a trace anchor bonded to a substrate, a device anchor bonded to the substrate, and an anchor flexure configured to flexibly couple the trace anchor and the device anchor to substantially prevent transmission of a stress induced in the trace anchor from being transmitted to the device anchor. | 03-22-2012 |
| 20120094418 | Wafer Level Package and Manufacturing Method Using Photodefinable Polymer for Enclosing Acoustic Devices - A wafer level package is produced by forming a photo definable polymer into a frame structure around a device located on a device wafer while maintaining the polymer in a partially cured state. Additional polymer material is used form a cap structure on a carrier wafer. The cap structure is attached to the frame structure so as to place the device within a cavity, wherein sufficient pressure is applied to the cap structure to hold the frame structure via a bonding of the partially cured photo definable polymers. The bonding is characterized by adhesion strength greater than the adhesion strength securing the cap structure to the carrier wafer. The carrier wafer is separated from the device wafer with a force sufficient for separating the carrier wafer from the cap structure while the cap structure remains attached to the frame structure. | 04-19-2012 |
| 20120100657 | SIMPLIFIED COPPER-COPPER BONDING - A method for bonding a first copper element onto a second copper element including forming a crystalline copper layer enriched in oxygen on each of surfaces of each of the first and second elements through which the elements will be in contact, the total thickness of both layers being less than 6 nm, which includes: a) polishing the surfaces so as to obtain a roughness of less than 1 nm RMS, and hydrophilic surfaces, b) cleaning the surfaces to suppress presence of particles due to the polishing and the major portion of corrosion inhibitors, and c) putting both crystalline copper layer enriched in oxygen in contact with each other. | 04-26-2012 |
| 20120142136 | WAFER LEVEL PACKAGING PROCESS FOR MEMS DEVICES - A process for packaging micro-electro-mechanical systems (MEMS) devices comprises providing a lower cover wafer and an upper cover wafer, providing a semiconductor wafer including a plurality of MEMS devices on a substrate layer, bonding the semiconductor wafer to a first surface of the lower cover wafer, and bonding a second surface of the upper cover wafer to the semiconductor wafer. The first surface of the lower cover wafer and the second surface of the upper cover wafer define a plurality of hermetically sealed cavity sections when bonded to the semiconductor wafer such that each of the MEMS devices is located inside one of the sealed cavity sections. A plurality of holes are formed that extend from the first surface of the upper cover wafer to the second surface of the upper cover wafer after the upper cover wafer is bonded to the semiconductor wafer. A metal lead layer is then deposited in each of the holes to provide an electrical connection with the MEMS devices. | 06-07-2012 |
| 20120164775 | ELECTRONIC DEVICE, SYSTEM, AND METHOD COMPRISING DIFFERENTIAL SENSOR MEMS DEVICES AND DRILLED SUBSTRATES - Electronic device which comprises a substrate provided with at least one passing opening, a MEMS device with function of differential sensor provided with a first and a second surface and of the type comprising at least one portion sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface thereof, the first surface of the MEMS device leaving the first active surface exposed and the second surface being provided with a further opening which exposes said second opposed active surface, the electronic device being characterized in that the first surface of the MEMS device faces the substrate and is spaced therefrom by a predetermined distance, the sensitive portion being aligned to the passing opening of the substrate, and in that it also comprises a protective package, which incorporates at least partially the MEMS device and the substrate so as to leave the first and second opposed active surfaces exposed respectively through the passing opening of the substrate and the further opening of the second surface. | 06-28-2012 |
| 20120270354 | METHODS FOR FABRICATING SENSOR DEVICE PACKAGE USING A SEALING STRUCTURE - Fabrication methods are provided for a sensor device packages. An exemplary fabrication method involves bonding a sensor structure and another structure using a sealing structure. The sealing structure surrounds a diaphragm region of the sensor structure and provides an airtight seal between the sensor structure and the other structure to establish a fixed reference pressure on one side of the diaphragm region. | 10-25-2012 |
| 20120282719 | METHODS FOR FORMING A MICRO ELECTRO-MECHANICAL DEVICE - Embodiments include methods for forming a device comprising a conductive substrate, a micro electro-mechanical systems (MEMS) structure, and a plurality of bond pads. The conductive substrate has a first side and a second side, the second side opposite the first side. The MEMS structure is formed over the first side of the conductive substrate. The plurality of bond pads are formed over the first side of the conductive substrate and electrically coupled to the first side of the conductive substrate. The conductive substrate and plurality of bond pads function to provide electrostatic shielding to the MEMS structure. | 11-08-2012 |
| 20130017643 | METHOD FOR FABRICATING PACKAGE STRUCTURE HAVING MEMS ELEMENTSAANM LIN; Chen-HanAACI Taichung HsienAACO TWAAGP LIN; Chen-Han Taichung Hsien TWAANM CHANG; Hong-DaAACI Taichung HsienAACO TWAAGP CHANG; Hong-Da Taichung Hsien TWAANM LIU; Cheng-HsiangAACI Taichung HsienAACO TWAAGP LIU; Cheng-Hsiang Taichung Hsien TWAANM LIAO; Hsin-YiAACI Taichung HsienAACO TWAAGP LIAO; Hsin-Yi Taichung Hsien TWAANM CHIU; Shih-KuangAACI Taichung HsienAACO TWAAGP CHIU; Shih-Kuang Taichung Hsien TW - A fabrication method of a package structure having MEMS elements includes: disposing a plate on top of a wafer having MEMS elements and second alignment keys; cutting the plate to form therein a plurality of openings exposing the second alignment keys; performing a wire bonding process and disposing block bodies corresponding to the second alignment keys, respectively; forming an encapsulant and partially removing the encapsulant and the block bodies from the top of the encapsulant; and aligning through the second alignment keys so as to form on the encapsulant a plurality of metal traces. The present invention eliminates the need to form through holes in a silicon substrate as in the prior art so as to reduce the fabrication costs. Further, since the plate only covers the MEMS elements and the encapsulant is partially removed, the overall thickness and size of the package structure are reduced. | 01-17-2013 |
| 20130023082 | Apparatus and Method of Wafer Bonding Using Compatible Alloy - A method of forming a MEMS device provides first and second wafers, where at least one of the first and second wafers has a two-dimensional array of MEMS devices. The method deposits a layer of first germanium onto the first wafer, and a layer of aluminum-germanium alloy onto the second wafer. To deposit the alloy, the method deposits a layer of aluminum onto the second wafer and then a layer of second germanium to the second wafer. Specifically, the layer of second germanium is deposited on the layer of aluminum. Next, the method brings the first wafer into contact with the second wafer so that the first germanium in the aluminum-germanium alloy contacts the second germanium. The wafers then are heated when the first and second germanium are in contact, and cooled to form a plurality of conductive hermetic seal rings about the plurality of the MEMS devices. | 01-24-2013 |
| 20130059409 | MINIATURE MEMS CONDENSER MICROPHONE PACKAGES AND FABRICATION METHOD THEREOF - MEMS microphone packages and fabrication methods thereof are disclosed. One method for fabricating a MEMS microphone package, includes providing a substrate, forming a cavity enclosed by a top cover part, wherein a housing wall part surrounds and supports the top cover part, and the substrate supports the housing wall part and the cover part, forming a MEMS sensing element and an IC chip inside the cavity, forming an opening comprising an acoustic passage connecting the cavity to an ambient space, and forming a conductive casing enclosing the top cover part and the housing wall, wherein the conductive casing is soldered to a PCB board and is electrically connected to a common analog ground lead on the PCB board. | 03-07-2013 |
| 20130078753 | CAPPED DEVICE INTERCONNECT IN A SEMICONDUCTOR PACKAGE - A method for fabricating a thin package that encapsulates a capped MEMS device electrically coupled with one or more encapsulated semiconductor devices is provided. A wafer-level packaging methodology is used in which the capped MEMS device is electrically coupled to a package interconnect, which then allows for electrical coupling to the one or more encapsulated semiconductor devices, as well as external connections. | 03-28-2013 |
| 20130102101 | Wafer Level Packaging - A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer. | 04-25-2013 |
| 20130115730 | Low-Temperature Wafer Level Processing for MEMS Devices - It would be beneficial to integrate MEMS devices with silicon CMOS electronics, package them in controlled environments, e.g. vacuum for MEMS resonators, and provide industry standard electrical interconnections such as solder bumps. However, to do so requires through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and the stresses placed on metallization membranes are not present in conventional CMOS packaging. Accordingly there is provided a means of reinforcing through-wafer vias for integrated MEMS-CMOS circuits by in-filling the through-wafer electrical vias with low temperature deposited ceramic materials deposited with processes compatible with post-processing of CMOS electronics. Beneficially ceramics such as silicon carbide provide enhanced mechanical strength, enhanced expansion matching, and increased thermal conductivity in comparison to silicon and solder materials. The ceramic reinforcing may be further adapted to include micro-channels for the provisioning of liquid cooling through the structures. | 05-09-2013 |
| 20130203199 | Methods of Bonding Caps for MEMS Devices - A method includes bonding a first bond layer to a second bond layer through eutectic bonding. The step of bonding includes heating the first bond layer and the second bond layer to a temperature higher than a eutectic temperature of the first bond layer and the second bond layer, and performing a pumping cycle. The pumping cycle includes applying a first force to press the first bond layer and the second bond layer against each other. After the step of applying the first force, a second force lower than the first force is applied to press the first bond layer and the second bond layer against each other. After the step of applying the second force, a third force higher than the second force is applied to press the first bond layer and the second bond layer against each other. | 08-08-2013 |
| 20130203200 | FABRICATION METHOD OF PACKAGE STRUCTURE HAVING MEMS ELEMENT - A fabrication method of a package structure having at least an MEMS element is provided, including: preparing a wafer having electrical connection pads and the at least an MEMS element; disposing lids for covering the at least an MEMS element, the lids having a metal layer formed thereon; electrically connecting the electrical connection pads and the metal layer with bonding wires; forming an encapsulant for covering the lids, bonding wires, electrical connection pads and metal layer; removing portions of the encapsulant to separate the bonding wires each into first and second sub-bonding wires, wherein top ends of the first and second sub-bonding wires are exposed, the first sub-bonding wires electrically connecting to the electrical connection pads, and the second sub-bonding wires electrically connecting to the metal layer; forming metallic traces on the encapsulant for electrically connecting to the first sub-bonding wires; forming bumps on the metallic traces; and performing a singulation process. | 08-08-2013 |
| 20130260503 | Methods and Apparatuses for Integrated Packaging of Microelectromechanical Devices - Microelectromechanical systems (MEMS) packages, packaged MEMS devices, and methods for making the same are disclosed. The method may include forming a chamber sacrificial layer above an insulating layer that is coupled to a wafer. The method further may include forming a packaging layer above the chamber sacrificial layer. The method additionally may include forming one or more openings through the packaging layer. The method also may include removing the chamber sacrificial layer through the one or more openings. The method may include forming a sealing layer above the packaging layer such that the sealing layer substantially seals the one or more openings to form a hermetic cavity. | 10-03-2013 |
| 20130273683 | Method of Fabricating An Electromechanical Structure Including at Least One Mechanical Reinforcing Pillar - The invention provides a method of fabricating an electromechanical structure presenting a first substrate including a layer of monocrystalline material covered in a sacrificial layer that presents a free surface, the structure presenting a mechanical reinforcing pillar in the sacrificial layer, the method including etching a well region in the sacrificial layer to define a mechanical pillar; depositing a first functionalization layer of the first material to at least partially fill the well region and cover the free surface of the sacrificial layer around the well region; depositing a second material different from the first material for terminating the filling of the well region to thereby cover the first functionalization layer around the well region, planarizing the filler layer, the pillar being formed by the superposition of the first material and second material in the well region; and releasing the electromechanical structure by removing at least partially the sacrificial layer. | 10-17-2013 |
| 20130280842 | MICROELECTROMECHANICAL DEVICE INCLUDING AN ENCAPSULATION LAYER OF WHICH A PORTION IS REMOVED TO EXPOSE A SUBSTANTIALLY PLANAR SURFACE HAVING A PORTION THAT IS DISPOSED OUTSIDE AND ABOVE A CHAMBER AND INCLUDING A FIELD REGION ON WHICH INTEGRATED CIRCUITS ARE FORMED, AND METHODS FOR FABRICATING SAME - There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide. | 10-24-2013 |
| 20140017843 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - Various aspects of the present invention, for example and without limitation, comprise a semiconductor device package and/or method for manufacturing a semiconductor device package. Such a device package may, for example, comprise a MEMS device package. | 01-16-2014 |
| 20140024161 | METHOD OF FABRICATING AN INERTIAL SENSOR - An inertial sensor including at least one measurement beam and one active body formed of a proof body and of deformable plates, said active body being maintained in suspension inside of a tight enclosure via its plates, the measurement beam connecting a portion of the proof body to an internal wall of said enclosure, said measurement beam having a lower thickness than the proof body. | 01-23-2014 |
| 20140045290 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING MICROPHONE - A method for manufacturing a semiconductor device is provided, the method comprising: fabricating a semiconductor element on a semiconductor substrate; joining a surface of the semiconductor substrate to a support member, the surface being on a side where the semiconductor element is fabricated; and polishing a surface on an opposite side of the surface of the semiconductor substrate where the semiconductor element is fabricated and reducing a thickness of the semiconductor substrate, in a state where the semiconductor substrate and the support member are joined. | 02-13-2014 |
| 20140080242 | METHOD FOR MANUFACTURING PACKAGE STRUCTURE WITH MICRO-ELECTROMECHANICAL ELEMENT - A package structure includes a micro-electromechanical element having a plurality of electrical contacts; a package layer enclosing the micro-electromechanical element and the electrical contacts, with a bottom surface of the micro-electromechanical element exposed from a lower surface of the package layer; a plurality of bonding wires embedded in the package layer, each of the bonding wires having one end connected to one of the electrical contacts, and the other end exposed from the lower surface of the package layer; and a build-up layer structure provided on the lower surface of the package layer, the build-up layer including at least one dielectric layer and a plurality of conductive blind vias formed in the dielectric layer and electrically connected to one ends of the bonding wires. The package structure is easier to accurately control the location of an external electrical contact, and the compatibility of the manufacturing procedures is high. | 03-20-2014 |
| 20140147955 | METHOD OF ENCAPSULATING A MICRO-ELECTROMECHANICAL (MEMS) DEVICE - A method for encapsulating a micro-electromechanical (MEMS) device, the method comprising: providing a sacrificial layer arrangement over the MEMS device; providing a first encapsulation layer over the sacrificial layer arrangement, the first encapsulation layer defining at least one aperture; providing a second encapsulation layer over the at least one aperture, the second encapsulation layer being provided to allow removal of the sacrificial layer arrangement around the second encapsulation layer; and removing the sacrificial layer arrangement through the at least one aperture to allow the second encapsulation layer to cover the at least one aperture thereby encapsulating the MEMS device. | 05-29-2014 |
| 20140162393 | MULTI-AXIS INTEGRATED MEMS DEVICES WITH CMOS CIRCUITS AND METHOD THEREFOR - An integrated multi-axis mechanical device and integrated circuit system. The integrated system can include a silicon substrate layer, a CMOS device region, four or more mechanical devices, and a wafer level packaging (WLP) layer. The CMOS layer can form an interface region, on which any number of CMOS and mechanical devices can be configured. The mechanical devices can include MEMS devices configured for multiple axes or for at least a first direction. The CMOS layer can be deposited on the silicon substrate and can include any number of metal layers and can be provided on any type of design rule. The integrated MEMS devices can include, but not exclusively, any combination of the following types of sensors: magnetic, pressure, humidity, temperature, chemical, biological, or inertial. Furthermore, the overlying WLP layer can be configured to hermetically seal any number of these integrated devices. | 06-12-2014 |
| 20140186987 | MANUFACTURING METHODS FOR MICRO-ELECTROMECHANICAL SYSTEM DEVICE HAVING ELECTRICAL INSULATING STRUCTURE - The disclosure relates to a micro-electromechanical system (MEMS) device having an electrical insulating structure. The MEMS device includes at least one moving part, at least one anchor, at least one spring and an insulating layer. The spring is connected to the anchor and to the moving part. The insulating layer is disposed in the moving part and the anchor. Each of the moving part and the anchor is divided into two conductive portions by the insulating layer. Whereby, the electrical signals of different moving parts are transmitted through the insulated electrical paths which are not electrically connected. | 07-03-2014 |
| 20140206123 | Dual Layer Microelectromechanical Systems Device and Method of Manufacturing Same - Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device. | 07-24-2014 |
| 20140206124 | PRESSURE SENSOR AND METHOD OF PACKAGING SAME - A method of packaging a pressure sensor die includes providing a lead frame having a die pad and lead fingers that surround the die pad. A tape is attached to a first side of the lead frame. A pressure sensor die is attached to the die pad on a second side of the lead frame and bond pads of the die are connected to the lead fingers. An encapsulant is dispensed onto the second side of the lead frame and covers the lead fingers and the electrical connections thereto. A gel is dispensed onto a top surface of the die and covers the die bond pads and the electrical connections thereto. A lid is attached to the lead frame and covers the die and the gel, and sides of the lid penetrate the encapsulant. | 07-24-2014 |
| 20140213007 | INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES - A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate. | 07-31-2014 |
| 20140242739 | SYSTEMS AND METHODS FOR A PRESSURE SENSOR HAVING A TWO LAYER DIE STRUCTURE - Systems and methods for a pressure sensor are provided, where the pressure sensor comprises a housing having a high side input port that allows a high pressure media to enter a high side of the housing and a low side input port that allows a low pressure media to enter a low side of the housing when the housing is placed in an environment containing the high and low pressure media; a substrate mounted within the housing; a stress isolation member mounted to the substrate; a die stack having sensing circuitry bonded to the stress isolation member; a low side atomic layer deposition (ALD) applied to surfaces, of the substrate, the stress isolation member, and the die stack, exposed to the low side input port; and a high side ALD applied to surfaces, of the stress isolation member and the die stack, exposed to the high side input port. | 08-28-2014 |
| 20140256077 | Method for preparation of micro electro-mechanical structure - The present invention discloses an adhesive-free method for preparation of micro electro-mechanical structure, comprising forming a micro electro-mechanical structure on a first substrate, forming an enclosing space for immersing liquid on the first or second substrate, and applying pressure to fix the first and second substrate. Before applying the pressure, the assembly including the two substrates is flipped, to make the contact surface immersed by the immersing liquid. | 09-11-2014 |
| 20140308771 | MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES - Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam. | 10-16-2014 |
| 20140342487 | PROCESS FOR ENCAPSULATING A MICROELECTRONIC DEVICE COMPRISING INJECTION OF NOBLE GAS THROUGH A MATERIAL PERMEABLE TO THIS NOBLE GAS - A process for encapsulating a microelectronic device, comprising the following steps:
| 11-20-2014 |
| 20140349434 | INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES - A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate. | 11-27-2014 |
| 20150024535 | SEMICONDUCTOR SENSOR DEVICE WITH FOOTED LID - A semiconductor sensor device is packaged using a footed lid instead of a pre-molded lead frame. A semiconductor sensor die is attached to a first side of a lead frame. The die is then electrically connected to leads of the lead frame. A gel material is dispensed onto the sensor die. The footed lid is attached to the substrate such that the footed lid covers the sensor die and the electrical connections between the die and the lead frame. A molding compound is then formed over the substrate and the footed lid such that the molding compound covers the substrate, the sensor die and the footed lid. | 01-22-2015 |
| 20150024536 | MEMS Device and Method of Manufacturing a MEMS Device - MEMS devices with a rigid backplate and a method of making a MEMS device with a rigid backplate are disclosed. In one embodiment, a device includes a substrate and a backplate supported by the substrate. The backplate includes elongated protrusions. | 01-22-2015 |
| 20150037921 | METHOD FOR MANUFACTURING ACOUSTIC WAVE DEVICE - A method for manufacturing acoustic wave devices includes forming power supply lines along boundaries between chip regions on a main surface of a collective substrate on which interdigital transducer (IDT) electrodes and pad electrodes are formed; providing substantially frame-shaped first support members, each including a first opening in which one of the IDT electrodes is located and including first through-holes in a region in which the pad electrodes are formed; providing second support members outside the first support members; providing a lid member including second through-holes at positions overlapping the first through-holes on top surfaces of the first support members; and forming terminal electrodes in the first through-holes and the second through-holes by electroplating. The collective substrate, the first support members, the second support members, and the lid member form enclosed spaces in which the power supply lines are sealed. | 02-05-2015 |
| 20150044807 | Ultrasonic Sensor Microarray and Method of Manufacturing Same - A sensor assembly including one or more capacitive micromachined ultrasonic transducer (CMUT) microarray modules which are provided with a number of individual transducers. The transducers include silicon device and backing layers joined by a fused benzocyclobutene (BCB) layer which defines the transducer air gap, and which are arranged to simulate or orient individual transducers in a hyperbolic paraboloid geometry. The transducers/sensor are arranged in a matrix and are activatable to emit and receive reflected beam signals at a frequency of between about 100 to 170 kHz. | 02-12-2015 |
| 20150044808 | METHOD OF FABRICATING INTEGRATED SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF - A method of fabricating an integrated semiconductor device, comprising: providing a substrate having a first region and a second region; and forming a semiconductor unit on the first region and forming a micro electro mechanical system (MEMS) unit on the second region in one process. | 02-12-2015 |
| 20150056733 | MANUFACTURING METHOD OF MIRCO-ELECTRO-MECHANICAL SYSTEM DEVICE AND MIRCO-ELECTRO-MECHANICAL SYSTEM DEVICE MADE THEREBY - The invention provides a manufacturing method of a MEMS device, which includes: providing an integrated circuit device including a substrate and an electrical structure on the substrate, the electrical structure includes at least one sensing region and at least one first connection section; providing a structure layer, and forming at least one second connection section on the structure layer; bonding the at least one first connection section and the at least one second connection section; etching the structure layer for forming at least one movable structure, the movable structure being located at a position corresponding to a position of the sensing region, and the movable structure being connected to the at least one first connection section via the at least one second connection section; and thereafter, providing a cap to cover the movable structure and the sensing region, wherein the movable structure is not directly connected to the cap. | 02-26-2015 |
| 20150104895 | METHOD OF FABRICATING MEMS DEVICES HAVING A PLURALITY OF CAVITIES - A method for forming an integrated circuit having Micro-electromechanical Systems (MEMS) includes forming at least two recesses into a first layer, forming at least two recesses into a second layer, the at least two recesses of the second layer being complementary to the recesses of the first layer. An intermediate layer is bonded onto the second layer, the intermediate layer includes through-holes corresponding to the recesses of the second layer. The first layer is bonded to the intermediate layer such that cavities are formed, the cavities to act as operating environments for MEMS devices. The two cavities have different pressures. | 04-16-2015 |
| 20150111332 | METHOD AND DEVICE OF MEMS PROCESS CONTROL MONITORING AND PACKAGED MEMS WITH DIFFERENT CAVITY PRESSURES - A method for fabricating an integrated MEMS device and the resulting structure therefore. A control process monitor comprising a MEMS membrane cover can be provided within an integrated CMOS-MEMS package to monitor package leaking or outgassing. The MEMS membrane cover can separate an upper cavity region subject to leaking from a lower cavity subject to outgassing. Differential changes in pressure between these cavities can be detecting by monitoring the deflection of the membrane cover via a plurality of displacement sensors. An integrated MEMS device can be fabricated with a first and second MEMS device configured with a first and second MEMS cavity, respectively. The separate cavities can be formed via etching a capping structure to configure each cavity with a separate cavity volume. By utilizing an outgassing characteristic of a CMOS layer within the integrated MEMS device, the first and second MEMS cavities can be configured with different cavity pressures. | 04-23-2015 |
| 20150118780 | MICROELECTROMECHANICAL SYSTEM (MEMS) MICROPHONE WITH PROTECTION FILM AND MEMS MICROPHONECHIPS AT WAFER LEVEL - A method to protect an acoustic port of a microelectromechanical system (MEMS) microphone is provided. The method includes: providing the MEMS microphone; and forming a protection film, on the acoustic port of the MEMS microphone. The protection film has a porous region over the acoustic port to receive an acoustic signal but resist at least an intruding material. The protection film can at least endure a processing temperature of solder flow. | 04-30-2015 |
| 20150290678 | Ultrasonic Sensor Microarray and Method of Manufacturing Same - A sensor assembly including one or more capacitive micromachined ultrasonic transducer (CMUT) microarray modules which are provided with a number of individual transducers. The microarray modules are arranged to simulate or orient individual transducers in a hyperbolic paraboloid geometry. The transducers/sensor are arranged in a rectangular or square matrix and are activatable individually, selectively or collectively to emit and received reflected beam signals at a frequency of between about 100 to 170 kHz. | 10-15-2015 |
| 20150298969 | METHOD OF PROTECTING MICROELECTRO MECHANICAL SYSTEM DEVICE - A method includes placing a microelectromechanical system (MEMS) device over a carrier, wire bonding the MEMS device to a bond pad on the carrier with a bond wire, and spray coating a buffer layer over the MEMS device and enclosing the bond wire. A Young's modulus value of the buffer layer is less than a Young's modulus value of the MEMS device. | 10-22-2015 |
| 20150307347 | SYSTEM ON A CHIP USING INTEGRATED MEMS AND CMOS DEVICES - An integrated MEMS system in which CMOS and MEMS devices are provided to form an integrated CMOS-MEMS system. The system can include a silicon substrate layer, a CMOS layer, MEMS and CMOS devices, and a wafer level packaging (WLP) layer. The CMOS layer can form an interface region, one which any number of CMOS MEMS devices can be configured. | 10-29-2015 |
| 20150315015 | Stacked Semiconductor Device and Method of Forming the Same Related Cases - A stacked semiconductor device includes a CMOS device and a MEMS device. The CMOS device includes a multilayer interconnect with metal elements disposed over the multilayer interconnect. The MEMS device includes metal sections with a first dielectric layer disposed over the metal sections. A cavity in the first dielectric layer exposes portions of the metal sections. A dielectric stop layer is disposed at least over the interior surface of the cavity. A movable structure is disposed over a front surface of the first dielectric layer and suspending over the cavity. The movable structure includes a second dielectric layer over the front surface of the first dielectric layer and suspending over the cavity, metal features over the second dielectric layer, and a flexible dielectric membrane over the metal features. The CMOS device is bonded to the MEMS device with the metal elements toward the flexible dielectric membrane. | 11-05-2015 |
| 20150315016 | METHOD AND STRUCTURE OF MONOLITHICALLY INTEGRATED ABSOLUTE PRESSURE SENSOR - An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures. | 11-05-2015 |
| 20150344299 | FABRICATION METHOD OF WAFER LEVEL PACKAGE HAVING A PRESSURE SENSOR - A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path. | 12-03-2015 |
| 20150360939 | METHOD OF INCREASING MEMS ENCLOSURE PRESSURE USING OUTGASSING MATERIAL - Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing. | 12-17-2015 |
| 20160002028 | INTEGRATED CMOS AND MEMS SENSOR FABRICATION METHOD AND STRUCTURE - A method of providing a CMOS-MEMS structure is disclosed. The method comprises patterning a first top metal on a MEMS actuator substrate and a second top metal on a CMOS substrate. Each of the MEMS actuator substrate and the CMOS substrate include an oxide layer thereon. The method includes etching each of the oxide layers on the MEMS actuator substrate and the base substrate, utilizing a first bonding step to bond the first patterned top metal of the MEMS actuator substrate to the second patterned top metal of the base substrate. Finally the method includes etching an actuator layer into the MEMS actuator substrate and utilizing a second bonding step to bond the MEMS actuator substrate to a MEMS handle substrate. | 01-07-2016 |
| 20160009549 | MICROFABRICATED ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS | 01-14-2016 |
| 20160009550 | METHODS OF FABRICATING MICRO ELECTRO MECHANICAL SYSTEM STRUCTURES | 01-14-2016 |
| 20160027601 | ENCAPSULATED MICRO-ELECTROMECHANICAL SYSTEM SWITCH AND METHOD OF MANUFACTURING THE SAME - Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A first sacrificial layer is used to form the actuation member of the MEMS switch. A second sacrificial layer is used to form the enclosure that encapsulates the MEMS switch. | 01-28-2016 |
| 20160041199 | ACCELEROMETER AND ITS FABRICATION TECHNIQUE - An accelerometer has E-shaped resilient beams to isolate stress and reduce deformation. A top cap silicon wafer and a bottom cap silicon wafer are both coupled with a measurement mass to form a capacitor. The measurement mass has a mass, range-of-motion stops, and resilient beams located within a support frame. The range-of-motion stops are coupled to the support frame by connection beams, and the mass is coupled with the range-of-motion stops by groups of E-shaped resilient beams. The ends of each resilient beam are connected to the range-of-motion stops, and the middle of each resilient beam is connected to the mass. | 02-11-2016 |
| 20160052779 | MEMS MICROPHONE PACKAGING METHOD - A MEMS microphone packaging method includes the steps of: providing a substrate having a conducting part and a through hole; mounting a processor chip on the substrate and electrically connecting the processor chip to the conducting part; mounting a sensor chip on the substrate over the through hole and adjacent to the processor chip and electrically connecting the sensor chip to the processor chip; and mounting a cover on the substrate over the processor chip and the sensor chip. The cover has a conducting circuit, and the conducting circuit electrically coupled with the conducting part. Thus, the method of the invention can make a flip architecture MEMS microphone, reducing the steps of the packaging process and lowering the degree of difficulty of the manufacturing process and the manufacturing costs. | 02-25-2016 |
| 20160052780 | STACKED MEMS MICROPHONE PACKAGING METHOD - A stacked MEMS microphone packaging method includes the steps of: providing a substrate having a conducting part and a through hole; affixing a retaining wall to the substrate and forming a conducting circuit in electrical connection with the conducting part; mounting a processor chip and a sensor chip on the substrate to have the sensor chip be disposed at a top side of the through hole; providing a carrier board having a first solder pad and a second solder pad and fixedly mounting the carrier board at the retaining wall and electrically coupled to the first solder pad and the second solder pad. Thus, the method can make a flip architecture MEMS microphone, reducing the steps of the packaging process and lowering the degree of difficulty of the manufacturing process and the manufacturing costs. | 02-25-2016 |
| 20160052782 | ELECTRONIC DEVICE PACKAGE AND FABRICATION METHOD THEREOF - The invention provides an electronic device package and fabrication method thereof. The electronic device package includes a sensor chip. An upper surface of the sensor chip comprises a sensing film. A covering plate having an opening structure covers the upper surface of the sensor chip. A cavity is between the covering plate and the sensor chip, corresponding to a position of the sensing film, where the cavity communicates with the opening structure. A spacer is between the covering plate and the sensor chip, surrounding the cavity. A pressure releasing region is between the spacer and the sensing film. | 02-25-2016 |
| 20160068386 | CAPACITIVE SENSING STRUCTURE WITH EMBEDDED ACOUSTIC CHANNELS - A MEMS device includes a dual membrane, an electrode, and an interconnecting structure. The dual membrane has a top membrane and a bottom membrane. The bottom membrane is positioned between the top membrane and the electrode and the interconnecting structure defines a spacing between the top membrane and the bottom membrane. | 03-10-2016 |
| 20160083247 | METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT - A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer. | 03-24-2016 |
| 20160096727 | INTEGRATED CIRCUIT PACKAGE METHOD - A method of forming a packaged electronic device includes fabricating a MEMS structure, such as a BAW structure, on a first semiconductor wafer substrate; forming a cavity in a second semiconductor wafer substrate; and mounting the second substrate on the first substrate such that the MEMS structure is positioned inside the cavity in the second substrate using epoxy die attachment film. A wafer level assembly and an integrated circuit package are also described. | 04-07-2016 |
| 20160096728 | MEMS Chip and Manufacturing Method Thereof - A MEMS chip includes a cap layer and a composite device layer. The cap layer includes a substrate. The substrate has a first region and a second region, wherein the first region includes plural first trenches and the second region has plural second trenches. The first region has a first etch pattern density and the second region has a second etch pattern density, wherein the first etch pattern density is higher than the second etch pattern density to form chambers of different pressures. | 04-07-2016 |
| 20160167956 | INTEGRATED CMOS BACK CAVITY ACOUSTIC TRANSDUCER AND THE METHOD OF PRODUCING THE SAME | 06-16-2016 |
| 20160176705 | SYSTEMS AND METHODS FOR FORMING MEMS ASSEMBLIES INCORPORATING GETTERS | 06-23-2016 |
| 20160176706 | SYSTEMS AND METHODS FOR FORMING MEMS ASSEMBLIES INCORPORATING GETTERS | 06-23-2016 |
