| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438049000 | Chemically responsive | 72 |
| 20080261342 | Chemical Sensor Using Semiconducting Metal Oxide Nanowires - Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting characteristics of the Nanowires to change. These changed characteristics are sensed, and used to determine either the presence of the materials and/or the concentration of the materials. The nanowires may be between 10 and 30 nm in diameter, formed using a comparable size particle of catalyst material. The nanowires may then be used as part of the channel of a field effect transistor, and the field effect transistor is itself characterized. | 10-23-2008 |
| 20090017571 | SENSING DEVICES FROM MOLECULAR ELECTRONIC DEVICES - The present invention generally relates to the fabrication of molecular electronics devices from molecular wires and Single Wall Nanotubes (SWNT). In one embodiment, the cutting of a SWNT is achieved by opening a window of small width by lithography patterning of a protective layer on top of the SWNT, followed by applying an oxygen plasma to the exposed SWNT portion. In another embodiment, the gap of a cut SWNT is reconnected by one or more difunctional molecules having appropriate lengths reacting to the functional groups on the cut SWNT ends to form covalent bonds. In another embodiment, the gap of a cut SWNT gap is filled with a self-assembled monolayer from derivatives of novel contorted hexabenzocoranenes. In yet another embodiment, a device based on molecular wire reconnecting a cut SWNT is used as a sensor to detect a biological binding event. | 01-15-2009 |
| 20090075414 | BIOCHIP AND METHOD OF FABRICATION - A method of fabricating a biochip and a biochip fabricated by the method are provided. The method can include providing a substrate including a plurality of first areas separated from each other by a second area, forming a plurality of activation patterns on each of the first areas, coupling a plurality of probes to each of the activation patterns, and cutting the substrate along the second area to form a plurality of chips. | 03-19-2009 |
| 20090087938 | Method for Manufacturing Microdevices or Integrated Circuits on Continuous Sheets - Current manufacturing of miniature or micro electronic mechanical optical chemical or biophysical devices utilizes discrete substrates holding one or more said devices. The use of discrete substrates entails several disadvantages with respect to economical manufacturing. This invention is a method of manufacturing devices using flexible carrier sheets with device substrates attached to the carrier sheet, storage/transport devices for the carrier sheet, and process tools capable of continuous processing of the carrier sheets. | 04-02-2009 |
| 20090124034 | Nanostructured Thin Films and Their Uses - The present invention generally discloses the use of a nanostructured non-silicon thin film (such as an alumina or aluminum thin film) on a supporting substrate which is subsequently coated with an active layer of a material such as silicon or tungsten. The base, underlying non-silicon material generates enhanced surface area while the active layer assists in incorporating and transferring energy to one or more analytes adsorbed on the active layer when irradiated with a laser during laser desorption of the analyte(s). The present invention provides substrate surfaces that can be produced by relatively straightforward and inexpensive manufacturing processes and which can be used for a variety of applications such as mass spectrometry, hydrophobic or hydrophilic coatings, medical device applications, electronics, catalysis, protection, data storage, optics, and sensors. | 05-14-2009 |
| 20090155948 | METHODS FOR MANUFACTURING CMOS COMPATIBLE BIO-SENSORS - A manufacture method for CMOS sensor, which comprise of steps such as: forming protection layer on a substrate having multiple device structural layers, then using first photo-resist layer as mask for etching to form patterned molecular sensing layer, then forming third photo resist layer and etching protection layer and substrate so as to remove partial substrate underneath the sensor structure. | 06-18-2009 |
| 20090181486 | METHOD FOR PRODUCING A TRANSISTOR-TYPE HYDROGEN SENSOR - A method for producing a transistor-type hydrogen sensor is invented. This method combines conventional semiconductor fabrication process with an electroless plating technique. The fabrication process comprises steps as follows: (a) preparing a semiconductor substrate, (b) forming a semiconductor-based material with an exposed surface on the substrate, (c) washing and then drying the semiconductor-based material, (d) separating the exposed surface of the semiconductor-based material, (e) depositing a gold-germanium alloy on the semiconductor-based material to form two Ohmic contacts, and (f) forming a Schottky contact gate metal having an affinity for hydrogen. The electroless plating technique deposits the Schottky contact gate metal, having an affinity for hydrogen, at a relatively low temperature and it thus can produce a transistor-type hydrogen sensor with excellent sensing performances. | 07-16-2009 |
| 20090280593 | MATRIX NANOCOMPOSITE SENSING FILM FOR SAW/BAW BASED HYDROGEN SULPHIDE SENSOR AND METHOD FOR MAKING SAME - A method can be adapted for design and preparation of a matrix nanocomposite sensing film for hydrogen sulphide SAW/BAW detection at room temperature. A matrix nanocomposite can be synthesized by incorporating both single-wall and multi-wall thiolated carbon nanotubes into conductive organic polymers or ceramic nanocrystalline in a properly functionalized manner. A thin organic sensing film can be prepared based on the matrix nanocomposite. The matrix nanocomposite sensing film can be prepared on a surface of a SAW/BAW device by an additive process or a direct printing process. Finally, the sensing film can be consolidated by thermal annealing or laser annealing under ambient conditions in order to obtain the stable sensing film with higher sensitivity and electrical properties for a SAW/BAW based H | 11-12-2009 |
| 20090286344 | Sensor And Method For Making The Same - A method of making a sensor comprises substantially laterally growing at least one nanowire having at least two segments between two electrodes, whereby a junction or connection is formed between the at least two segments; and establishing a sensing material adjacent to the junction or connection, and adjacent to at least a portion of each of the at least two segments, wherein the sensing material has at least two states. | 11-19-2009 |
| 20100022045 | SENSOR PLATFORM USING A NON-HORIZONTALLY ORIENTED NANOTUBE ELEMENT - Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements. | 01-28-2010 |
| 20100047948 | SENSOR AND METHOD OF MANUFACTURING THE SAME - A sensor comprising a semiconductor film having a plurality of mesopores and containing an oxide, and electrodes electrically connected to the semiconductor film, wherein at least part of surfaces in the mesopores is coated with an organic material. | 02-25-2010 |
| 20100216273 | METHOD FOR FABRICATING CARBON NANOTUBE ARRAY SENSOR - A method of fabricating a carbon nanotube array sensor includes the following steps. A carbon nanotube array, a first electrode and a second electrode are provided, the carbon nanotube array includes a plurality of carbon nanotubes. Each of the carbon nanotubes includes a first end and a second end opposite to the first end. A first metallophilic layer is formed on the first end of each of the carbon nanotubes. At least one first conductive metal layer is arranged between the first metallophilic layer and the first electrode to electrically connect each of the carbon nanotubes with the first electrode. A second metallophilic layer is formed on the second end of each of the carbon nanotubes. At least one second conductive metal layer is arranged between the second metallophilic layer and the second electrode to electrically connect each of the carbon nanotubes with the second electrode. | 08-26-2010 |
| 20100297797 | MANUFACTURING METHOD OF AN ELECTRONIC DEVICE INCLUDING OVERMOLDED MEMS DEVICES - A method manufactures an electronic device comprising a MEMS device overmolded in a protective casing. The MEMS device includes an active surface wherein a portion of the MEMS device is integrated, and is sensitive, through a membrane, to chemical/physical variations of a fluid. Prior to the molding step, at least one resin layer is formed on at least one region overlying the active surface in correspondence with the membrane. After, at least one portion of at least one resin layer is removed from at least one region, so that in the region an opening is formed, through which the MEMS device is activated from the outside of the protective casing. | 11-25-2010 |
| 20100330721 | METHOD FOR FORMING BURIED CAVITIES WITHIN A SEMICONDUCTOR BODY, AND SEMICONDUCTOR BODY THUS MADE - A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches. | 12-30-2010 |
| 20110081739 | ELECTRONIC DEVICE INCLUDING MEMS DEVICES AND HOLED SUBSTRATES, IN PARTICULAR OF THE LGA OR BGA TYPE - An electronic device includes a substrate provided with a passing opening and a MEMS device including an active surface wherein a portion of the MEMS device is integrated sensitive to chemical/physical variations of a fluid. The active surface of the MEMS device faces the substrate and is spaced therefrom, the sensitive portion being aligned to the opening. A protective package incorporates at least partially the MEMS device and the substrate, leaving at least the sensitive portion of the MEMS device, and the opening of the substrate exposed. A barrier element is positioned in an area which surrounds the sensitive portion to realize a protection structure for the MEMS device, so that the sensitive portion is free. | 04-07-2011 |
| 20110097837 | GaN-BASED NITRIC OXIDE SENSORS AND METHODS OF MAKING AND USING THE SAME - GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e.g., SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid. Electrical contact pads are preferably provided in some embodiments so as to be in electrical contact with the source and drain contact regions, respectively. Electrical leads may thus be connected to the contact pads. According to other embodiments, the NO detection device will include a metalloporphyrin adsorbed on the GaN gate region. | 04-28-2011 |
| 20110212562 | METHOD OF PRODUCING A BIOSENSOR - A method for manufacturing a biosensor includes forming a laminate of a first silicon oxide film and a polysilicon film on one surface of a silicon substrate; forming a second silicon oxide film on the other surface of the silicon substrate; forming a source electrode, a drain electrode, and a channel on the first silicon oxide film, the channel connecting the source electrode and the drain electrode; and removing the polysilicon film. | 09-01-2011 |
| 20110237012 | METHOD FOR FABRICATING NOVEL HIGH-PERFORMANCE FIELD-EFFECT TRANSISTOR BIOSENSOR BASED ON CONDUCTIVE POLYMER NANOMATERIALS FUNCTIONALIZED WITH ANTI-VEGF ADAPTER - Disclosed is a method for fabricating a high-performance field-effect transistor biosensor for diagnosing cancers using micro conductive polymer nanomaterials funtionalized with anti-VEGF aptamer. Disclosed is a high-sensitivity field-effect transistor biosensor for diagnosing cancers using a micro conductive polymer nanomaterial transistor array including a micro polymer nanomaterial transistor array including a channel region provided with a metal source electrode, a metal drain electrode, a gate and micro polymer nanomaterials, and an anti-VEGF aptamer covalently bound to the surface of the micro polymer nanomaterials constituting the channel region of the micro polymer nanomaterials transistor array, to target VEGF (Vascular endothelial growth factor). | 09-29-2011 |
| 20120015467 | BIOSENSOR USING NANODOT AND METHOD OF MANUFACTURING THE SAME - A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost. | 01-19-2012 |
| 20120064655 | Optical device and method of making - An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition. | 03-15-2012 |
| 20120070930 | METHOD AND APPARATUS TO FABRICATE POLYMER ARRAYS ON PATTERNED WAFERS USING ELECTROCHEMICAL SYNTHESIS - A wafer having a plurality of dies (also called array chips) on the wafer, the die having an electrode to generate a deprotecting reagent, a working electrode to electrochemically synthesize a material, a confinement electrode adjacent to the working electrode to confine reactive reagents, and a die pad, wherein die pads of the plurality of dies are interconnected on the wafer to electrochemically synthesize the material in parallel on a plurality of working electrodes is disclosed. Also, a method for wafer-scale manufacturing of a plurality of dies and a method for electrochemically synthesizing a material in parallel on a plurality of dies on a wafer are disclosed. | 03-22-2012 |
| 20120142135 | METHOD OF FABRICATING SENSORS HAVING FUNCTIONALIZED RESONATING BEAMS - Some embodiments relate to method of fabricating a sensor. The method includes providing a substrate wafer that includes a suspended beam; adding an adhesive layer to the substrate wafer such that the adhesive layer covers portions of the substrate without covering the suspended beam; positioning a cover wafer onto the adhesive layer such that the suspend beam is exposed to ambient air through openings in the cover wafer; and functionalizing the suspended beam by contacting the suspended beam with materials through the opening in the cover wafer. | 06-07-2012 |
| 20120178199 | Imprinted Semiconductor Multiplex Detection Array - An array of sensor devices, each sensor including a set of semiconducting nanotraces having a width less than about 100 nm is provided. Method for fabricating the arrays is disclosed, providing a top-down approach for large arrays with multiple copies of the detection device in a single processing step. Nanodimensional sensing elements with precise dimensions and spacing to avoid the influence of electrodes are provided. The arrays may be used for multiplex detection of chemical and biomolecular species. The regular arrays may be combined with parallel synthesis of anchor probe libraries to provide a multiplex diagnostic device. Applications for gas phase sensing, chemical sensing and solution phase biomolecular sensing are disclosed. | 07-12-2012 |
| 20120225512 | METHOD AND APPARATUS TO FABRICATE POLYMER ARRAYS ON PATTERNED WAFERS USING ELECTROCHEMICAL SYNTHESIS - A wafer having a plurality of dies (also called array chips) on the wafer, the die having an electrode to generate a deprotecting reagent, a working electrode to electrochemically synthesize a material, a confinement electrode adjacent to the working electrode to confine reactive reagents, and a die pad, wherein die pads of the plurality of dies are interconnected on the wafer to electrochemically synthesize the material in parallel on a plurality of working electrodes is disclosed. Also, a method for wafer-scale manufacturing of a plurality of dies and a method for electrochemically synthesizing a material in parallel on a plurality of dies on a wafer are disclosed. | 09-06-2012 |
| 20120258560 | METHOD AND SYSTEM FOR FABRICATING ION-SELECTIVE FIELD-EFFECT TRANSISTOR (ISFET) - The various embodiments herein provide a method for fabricating Ion-Selective Field-Effect Transistor (ISFET) with a nano porous poly silicon layer on a gate region. The method includes providing a p-type silicon substrate and forming a silicon dioxide layer on the p-type silicon substrate. A poly silicon layer is deposited on the silicon dioxide layer. The poly silicon layer is patterned to form a gate region, a source region and a drain region in the silicon dioxide layer. A passivation layer is deposited on the gate region, source region and the drain region. The passivation layer is etched using a buffered HF to transform the poly silicon layer into a nano porous layer on the gate region by a sequential reactive ion etching process. | 10-11-2012 |
| 20120270350 | SEMICONDUCTOR BIO-SENSORS AND METHODS OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor bio-sensor comprises providing a substrate, forming a first dielectric layer on the substrate, forming a patterned first conductive layer on the first dielectric layer, the patterned first conductive layer including a first portion and a pair of second portions, forming a second dielectric layer, a third dielectric layer and a fourth dielectric layer in sequence over the patterned first conductive layer, forming cavities into the fourth dielectric layer, forming vias through the cavities, exposing the second portions of the patterned first conductive layer, forming a patterned second conductive layer on the fourth dielectric layer, forming a passivation layer on the patterned second conductive layer, forming an opening to expose a portion of the third dielectric layer over the first portion of the patterned first conductive layer, and forming a chamber through the opening. | 10-25-2012 |
| 20120270351 | LOW TEMPERATURE BI-CMOS COMPATIBLE PROCESS FOR MEMS RF RESONATORS AND FILTERS - A method of removal of a first and second sacrificial layer wherein an O | 10-25-2012 |
| 20120288976 | METHODS FOR MANUFACTURING LOW NOISE CHEMICALLY-SENSITIVE FIELD EFFECT TRANSISTORS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 11-15-2012 |
| 20120329192 | METHODS FOR MANUFACTURING MICROWELL STRUCTURES OF CHEMICALLY-SENSITIVE SENSOR ARRAYS - Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. | 12-27-2012 |
| 20120329193 | GRAPHENE SENSOR - A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel. | 12-27-2012 |
| 20130017642 | CHEMICALLY-SENSITIVE FIELD EFFECT TRANSISTOR BASED PIXEL ARRAY WITH PROTECTION DIODES - Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. | 01-17-2013 |
| 20130040412 | METHOD OF FORMING SILICON NANOWIRES AND METHOD OF FABRICATING LITHIUM SECONDARY BATTERY USING THE SAME - A method of preparing a silicon nanowire and a method of fabricating a lithium secondary battery including the silicon nanowire are provided. The method of preparing a silicon nanowire may include forming a catalyst layer including metal particles separated from one another on a silicon layer, selectively etching the silicon layer contacting the metal particles, and removing the metal particles. | 02-14-2013 |
| 20130102099 | METHOD OF MANUFACTURING CELLULAR ELECTROPHYSIOLOGY SENSOR CHIP - A cellular electrophysiology sensor is adapted to measure an electrical change of a test cell. A chip for the sensor includes a diaphragm, and a thermally-oxidized film mainly containing silicon dioxide on the diaphragm. The diaphragm includes a silicon layer and a silicon dioxide layer on an upper surface of the silicon layer. A through-hole passing through the silicon layer and the silicon dioxide layer is formed. The through-hole has an opening which opens at the silicon dioxide layer and is adapted to capture the test cell. The thermally-oxidized film is provided on an inner wall surface of the through-hole, and unified with the silicon dioxide layer at the opening of the through-hole. This cellular electrophysiology sensor chip can stably capture the test cell and provides a gigaseal stably even if test cells have different properties. | 04-25-2013 |
| 20130115728 | FUSING METHOD OF SUBSTRATE LAYER, MANUFACTURING METHOD OF MICROFLUIDIC CHIP AND FUSING APPARATUS OF SUBSTRATE LAYER - Provided is a fusing method of a substrate layer including: treating a joining surface of a substrate layer formed from a resin using an organic solvent having solubility with respect to the resin; and heating the treated substrate layer at less than a glass transition temperature or a softening point temperature of the resin and crimping the heated substrate layer. | 05-09-2013 |
| 20130210182 | METHODS AND APPARATUS FOR MEASURING ANALYTES - Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. | 08-15-2013 |
| 20130288417 | SEMICONDUCTOR DEVICES HAVING NANOCHANNELS CONFINED BY NANOMETER-SPACED ELECTRODES - Semiconductor devices having integrated nanochannels confined by nanometer spaced electrodes, and VLSI (very large scale integration) planar fabrication methods for making the devices. A semiconductor device includes a bulk substrate and a first metal layer formed on the bulk substrate, wherein the first metal layer comprises a first electrode. A nanochannel is formed over the first metal layer, and extends in a longitudinal direction in parallel with a plane of the bulk substrate. A second metal layer is formed over the nanochannel, wherein the second metal layer comprises a second electrode. A top wall of the nanochannel is defined at least in part by a surface of the second electrode and a bottom wall of the nanochannel is defined by a surface of the first electrode. | 10-31-2013 |
| 20130302932 | METHODS FOR MANUFACTURING HIGH CAPACITANCE MICROWELL STRUCTURES OF CHEMICALLY-SENSITIVE SENSORS - Methods and apparatus relating to FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. | 11-14-2013 |
| 20140030838 | CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS - A method for forming a sensor includes forming a base-region barrier in contact with a base substrate. The base-region barrier includes a monocrystalline semiconductor having a same dopant conductivity as the base substrate. An emitter and a collector are formed in contact with and on opposite sides of the base-region barrier to form a bipolar junction transistor. The collector, the emitter and the base-region barrier are planarized to form a level surface opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor. | 01-30-2014 |
| 20140093992 | GAS SENSOR AND METHOD FOR MANUFACTURING THE GAS SENSOR - It is an object to provide a gas sensor which is formed by a simple manufacturing process. Another object is to provide a gas sensor whose manufacturing cost is reduced. A transistor which includes an oxide semiconductor layer in contact with a gas and which serves as a detector element of a gas sensor, and a transistor which includes an oxide semiconductor layer in contact with a film having a gas barrier property and which forms a detection circuit are formed over one substrate by the same process, whereby a gas sensor using these transistors may be formed. | 04-03-2014 |
| 20140106494 | DUAL-GATE BIO/CHEM SENSOR - A dual gate extremely thin semiconductor-on-insulator transistor with asymmetric gate dielectrics is provided. This structure can improve the sensor detection limit and also relieve the drift effects. Detection is performed at a constant current mode while the species will be detected at a gate electrode with a thin equivalent oxide thickness (EOT) and the gate bias will be applied to the second gate electrode with thicker EOT to maintain current flow through the transistor. As a result, a small change in the charge on the first electrode with the thin EOT will be translated into a larger voltage on the gate electrode with the thick EOT to sustain the current flow through the transistor. This allows a reduction of the sensor dimension and therefore an increase in the array size. The dual gate structure further includes cavities, i.e., microwell arrays, for chemical sensing. | 04-17-2014 |
| 20140162390 | CARBON BASED BIOSENSORS AND PROCESSES OF MANUFACTURING THE SAME - Sensors, processes for manufacturing the sensors, and processes of detecting a target molecule with the sensor generally includes a substrate including a channel and first and second electrodes electrically connected to the channel, wherein the channel includes a monolayer of surface functionalized graphene or surface functionalized carbon nanotubes, wherein the surface functionalized graphene or surface functionalized carbon nanotubes include an imidazolidone compound. | 06-12-2014 |
| 20140179047 | Field Effect Transistor-Based Bio-Sensor - An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus. | 06-26-2014 |
| 20140193938 | CHEMICALLY SENSITIVE SENSOR WITH LIGHTLY DOPED DRAINS - A chemically sensitive sensor with a lightly doped region that affects an overlap capacitance between a gate and an electrode of the chemical sensitive sensor. The lightly doped region extends beneath and adjacent to a gate region of the chemical sensitive sensor. Modifying the gain of the chemically sensitive sensor is achieved by manipulating the lightly doped region under the electrodes. | 07-10-2014 |
| 20140213006 | METHOD FOR FORMING VERTICAL TYPE SENSOR - The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection. | 07-31-2014 |
| 20140273324 | METHODS FOR MANUFACTURING CHEMICAL SENSORS WITH EXTENDED SENSOR SURFACES - In one implementation, a method for manufacturing a chemical sensor is described. The method includes forming a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material is formed defining an opening extending to the upper surface of the floating gate conductor. A conductive material is formed within the opening and on an upper surface of the dielectric material. A fill material is formed on the conductive material. The fill material is used as a protect mask to remove the conductive material on the upper surface of the dielectric material. The fill material is then removed to expose remaining conductive material on a sidewall of the opening. | 09-18-2014 |
| 20140295605 | METHOD OF FABRICATING A CAPACITIVE ENVIRONMENT SENSOR - A method for fabrication of capacitive environment sensors is provided in which the sensor elements are integrated in a CMOS structure with electronics through the use of complementary metal oxide semiconductor (CMOS) fabrication methods. Also provided are environment sensors fabricated, for example, by the method, and a measurement system using the environment sensors fabricated by the method. The described method includes etching away one of the metal layers in a CMOS chip to create a cavity. This cavity is then filled with an environment-sensitive dielectric material to form a sensing capacitor between plates formed by the metal adhesion layers or an array of contacts from other metal layers of the CMOS structure. This approach provides improved sensing capabilities in a system that is easily manufactured. | 10-02-2014 |
| 20140308770 | CHEMICAL SENSOR - In a method for manufacturing a chemical sensor with multiple sensor cells, a substrate is provided and an expansion inhibitor is applied to the substrate for preventing a sensitive material to be applied to an area on the substrate for building a sensitive film of a sensor cell to expand from said area. The sensitive material is provided and the sensitive film is built by contactless dispensing the sensitive material to said area. | 10-16-2014 |
| 20140335640 | BIOMEMS AND PLANAR LIGHT CIRCUIT WITH INTEGRATED PACKAGE - A BioMEMS microelectromechanical apparatus and for fabricating the same is disclosed. A substrate is provided with at least one signal conduit formed on the substrate. A sacrificial layer of sacrificial material may be deposited on the signal conduit and optionally patterned to remove sacrificial material from outside the packaging covered area. A bonding layer may be deposited on at least a portion of the signal conduit and on the sacrificial layer when included. The bonding layer may be planarized and patterned to form one or more cap bonding pads and define a packaging covered area. A cap may be bonded on the cap bonding pad to define a capped area and so that the signal conduit extends from outside the capped area to inside the capped area. Additionally, a test material such as a fluid may be provided within the capped area. | 11-13-2014 |
| 20140370636 | EXTENDED GATE SENSOR FOR pH SENSING - A sensing device includes a substrate having a source region and a drain region formed therein. A gate structure is formed over the substrate and includes a gate dielectric and a gate conductor. The gate conductor is formed on the gate dielectric and disposed between the source region and the drain region. A dielectric layer is formed over the substrate and has a depth configured to form a well over the gate conductor. A gate extension is formed in contact with or as part of the gate conductor and including a conductive material covering one or more surfaces of the well. | 12-18-2014 |
| 20140370637 | NANOCHANNEL PROCESS AND STRUCTURE FOR BIO-DETECTION - Nanochannel sensors and methods for constructing nanochannel sensors. An example method includes forming a sacrificial line on an insulating layer, forming a dielectric layer, etching a pair of electrode trenches, forming a pair of electrodes, and removing the sacrificial line to form a nanochannel. The dielectric layer may be formed on insulating layer and around the sacrificial line. The pair of electrode trenches may be etched in the dielectric layer on opposite sides of the sacrificial line. The pair of electrodes may be formed by filling the electrode trenches with electrode material. The sacrificial line may be removed by forming a nanochannel between the at least one pair of electrodes. | 12-18-2014 |
| 20140377900 | MANUFACTURABLE SUB-3 NANOMETER PALLADIUM GAP DEVICES FOR FIXED ELECTRODE TUNNELING RECOGNITION - A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nano gap. | 12-25-2014 |
| 20150024533 | METHOD OF FORMING A SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the H | 01-22-2015 |
| 20150031158 | INTEGRATED CIRCUIT AND MANUFACTURING METHOD - Disclosed is an integrated circuit comprising a substrate ( | 01-29-2015 |
| 20150056732 | SOLID STATE NANOPORE DEVICES AND METHODS OF MANUFACTURE - Solid state nanopore devices for nanopore applications and methods of manufacture are disclosed herein. The method includes forming a membrane layer on an underlying substrate. The method further includes forming a hole in the membrane layer. The method further comprises plugging the hole with a sacrificial material. The method further includes forming a membrane over the sacrificial material. The method further includes removing the sacrificial material within the hole and portions of the underlying substrate. The method further includes drilling an opening in the membrane, aligned with the hole. | 02-26-2015 |
| 20150064829 | CHEMICAL SENSOR WITH SIDEWALL SPACER SENSOR SURFACE - In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor. | 03-05-2015 |
| 20150093849 | SYSTEMS AND METHODS FOR SINGLE-MOLECULE NUCLEIC-ACID ASSAY PLATFORMS - Integrated circuits for a single-molecule nucleic-acid assay platform, and methods for making such circuits are disclosed. In one example, a method includes transferring one or more carbon nanotubes to a complementary metal-oxide semiconductor (CMOS) substrate, and forming a pair of post-processed electrodes on the substrate proximate opposing ends of the one or more carbon nanotubes. | 04-02-2015 |
| 20150140716 | MANUFACTURABLE SUB-3 NANOMETER PALLADIUM GAP DEVICES FOR FIXED ELECTRODE TUNNELING RECOGNITION - A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nano gap. | 05-21-2015 |
| 20150325437 | METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SENSITIVE FILM BASED ON DISPLACEMENT REACTION-THERMAL OXIDATION METHOD - The present disclosure provides a method for preparing compound semiconductor sensitive film based on a displacement reaction-thermal oxidation method, the method comprising: growing a layer of Zn on a high temperature-resistant substrate; submerging the substrate on which the layer of Zn has been grown into ionic solution of soluble salt of Cu, such that Cu ions in the solution are displaced so as to separate Cu nano-particles out on a surface of the layer of Zn; and performing a thermal oxidation process on the layer of Zn to whose surface Cu nano-particles are adhered, such that the Cu nano-particles are oxidized into CuO nano-particles, so as to obtain a ZnO gas sensitive film that is doped with CuO nano-particles. The above preparing method has the following advantages: good filming quality, simplified preparation process, low cost and easy to control. | 11-12-2015 |
| 20150330942 | Direct Sensing BioFETs and Methods of Manufacture - The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage. | 11-19-2015 |
| 20150357191 | METHOD FOR MANUFACTURING ORDERED NANOWIRE ARRAY OF NIO DOPED WITH PT IN SITU - The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of H | 12-10-2015 |
| 20150364340 | CHEMICAL SENSOR ARRAYS FOR ODOR DETECTION - An array of semiconductor chemical sensors and a method for manufacturing the array of semiconductor chemical sensors are disclosed. In some examples, the method may include providing a semiconductor substrate including a plurality of areas, and ejecting onto each area of the semiconductor substrate a solution including at least one modification material for modifying each area of the semiconductor substrate. | 12-17-2015 |
| 20160003813 | Biosensor and method of making same - Sensors suitable for the sensing/detection of biological or chemical agents may be fabricated by immobilizing biological and/or chemical recognition components (selectors or probes) on a substrate by the polymerization of a suitable monomer in the presence of the selectors or probes, for example, by Polysiloxane Monolayer Immobilization (PMI). PMI may involve the polymerization of polysiloxane onto a substrate, onto which selector molecules are adsorbed or otherwise immobilized. The resulting immobilized selector molecule may then be used to interact with specific molecules (targets) within a mixture of molecules, thereby enabling those specific molecules to be detected and/or quantified. | 01-07-2016 |
| 20160043265 | INTEGRATED CIRCUIT AND MANUFACTURING METHOD - Disclosed is an integrated circuit comprising a substrate ( | 02-11-2016 |
| 20160047772 | MAKING IMPRINTED THIN-FILM ELECTRONIC SENSOR STRUCTURE - A method of making an imprinted electronic sensor structure on a substrate for sensing an environmental factor includes coating, imprinting, and curing a curable layer on the substrate to form a plurality of spatially separated micro-channels extending from the layer surface into the cured layer. First and second layers are located in each micro-channel to form a multi-layer micro-wire. Either the first layer is a cured electrical conductor forming a conductive layer located only within the micro-channel and the second layer is a reactive layer or the first layer is a reactive layer and the second layer is a cured electrical conductor forming a conductive layer located only within the micro-channel. The reactive layer is exposed to the environmental factor and at least a portion of the reactive layer responds to the environmental factor. | 02-18-2016 |
| 20160077045 | Chemical Sensor with Consistent Sensor Surface Areas - A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening. | 03-17-2016 |
| 20160077049 | BIOSENSOR DEVICES, SYSTEMS AND METHODS THEREFOR - A sensing apparatus for sensing target materials including biological or chemical molecules in a fluid. One such apparatus includes a semiconductor-on-insulator (SOI) structure having an electrically-insulating layer, a fluidic channel supported by the SOI structure and configured and arranged to receive and pass a fluid including the target materials, and a semiconductor device including at least three electrically-contiguous semiconductor regions doped to exhibit a common polarity. The semiconductor regions include a sandwiched region sandwiched between two of the other semiconductor regions, and configured and arranged adjacent to the fluidic channel with a surface directed toward the fluidic channel for coupling to the target materials in the fluidic channel, and further arranged for responding to a bias voltage. The sensing apparatus also includes an amplification circuit in or on the SOI and that is arranged to facilitate sensing of the target material near the fluidic channel. | 03-17-2016 |
| 20160090302 | MICROFLUIDIC DEVICE WITH INTEGRATED STIRRING STRUCTURE AND MANUFACTURING METHOD THEREOF - A microfluidic device, comprising: a semiconductor body, having a first side and a second side, opposite to one another in a first direction; and at least one well, configured for containing a fluid, extending in the semiconductor body starting from the first side and being delimited at the bottom by a bottom surface. The microfluidic device further comprises a stirring structure integrated in the well at the bottom surface, the stirring structure including a first stirring portion coupled to the semiconductor body and provided with at least one first suspended beam configured for being moved in a second direction so as to generate, in use, agitation of the fluid present in said well. | 03-31-2016 |
| 20160116432 | MANUFACTURING METHOD OF A GRAPHENE-BASED ELECTROCHEMICAL SENSOR, AND ELECTROCHEMICAL SENSOR - A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure. | 04-28-2016 |
| 20160116435 | NANOCHANNEL ELECTRODE DEVICES - A nanoscale electrode device can be fabricated by forming a pair of semiconductor fins laterally spaced from each other by a uniform distance and formed on a substrate. The pair of semiconductor fins can function as a pair of electrodes that can be biased to detect the leakage current through a nanoscale string to pass therebetween. A nanochannel having a uniform separation distance is formed between the pair of semiconductor fins. The nanochannel may be defined by a gap between a pair of raised active regions formed on the pair of semiconductor fins, or between proximal sidewalls of the pair of semiconductor fins. An opening is formed through the portion of the substrate underlying the region of the nanochannel to enable passing of a nanoscale string. | 04-28-2016 |
| 20160146752 | Device for Detecting at least One Gaseous Analyte and Method for the Production Thereof - A device for detecting at least one gaseous analyte comprises a detection section including a semiconductor substrate and at least one sensor element, which is arranged on the semiconductor substrate. The at least one sensor element includes two electrodes and a solid electrolyte layer arranged between the electrodes. The device also comprises a protective cap configured to cover the at least one sensor element, and at least one temperature-control unit configured for temperature control of the protective cap. The at least one temperature-control unit is arranged on the protective cap. The protective cap is formed from a semiconductor material. The device further comprises a diffusion section having a plurality of passage openings for the gaseous analyte arranged at least in a partial section of the protective cap. | 05-26-2016 |
| 20160161432 | CONDENSATION SENSOR SYSTEMS AND METHODS - Condensation sensor systems and methods are described herein. Methods for forming a condensation sensor can include depositing a Ill-nitride on a substrate via sputtering, and implementing conductive contacts on the deposited Ill-nitride via a shadow mask. | 06-09-2016 |
| 20160163766 | INTEGRATED CIRCUIT COMPRISING A GAS SENSOR - An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element. | 06-09-2016 |
