| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438039000 | Mesa formation | 42 |
| 20080233670 | Method for Fabricating a P-I-N Light Emitting Diode Using Cu-Doped P-Type Zno - A method of fabricating a p-i-n type light emitting diode using p-type ZnO, and particularly, a technique for fabricating a p-type ZnO thin film doped with copper, a light emitting diode manufactured using the same, and its application to electrical and magnetic devices. The method of fabricating a p-i-n type light emitting diode using p-type ZnO includes depositing a low-temperature ZnO buffer layer on a sapphire single-crystal substrate, depositing an n-type gallium doped ZnO layer on the deposited low-temperature ZnO buffer layer, depositing an intrinsic ZnO thin film on the deposited n-type gallium doped ZnO layer, forming a p-type ZnO thin film layer on the deposited intrinsic ZnO thin film, forming a MESA structure on the p-type ZnO thin film layer through wet etching to obtain a diode structure, and subjecting the diode structure to post-heat treatment. | 09-25-2008 |
| 20080280386 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing an laser diode includes: providing a wafer having thereon a semiconductor structure; depositing an SiO | 11-13-2008 |
| 20080293177 | Method of manufacturing nitride-based semiconductor light emitting diode - Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively. | 11-27-2008 |
| 20090098675 | Method for manufacturing semiconductor light-emitting device - A method of manufacturing a semiconductor light-emitting device includes steps of forming a vertical cavity structure including a layer to be oxidized on a semiconductor substrate, and then forming a circular groove having a depth which penetrates at least the layer to be oxidized from an upper surface of the vertical cavity structure, thereby forming a columnar mesa whose side face is surrounded by the groove, oxidizing the layer to be oxidized from the side face of the mesa, thereby forming a current confinement layer, and forming a mask layer covering at least a central region of the upper surface of the mesa and exposing at least an edge of the upper surface and the side face of the mesa to an external, and then etching at least the edge of the upper surface and the side face of the mesa by using the mask layer as a mask. | 04-16-2009 |
| 20090130790 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in an ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating. | 05-21-2009 |
| 20090197363 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing a semiconductor optical device comprises forming a groove on a first semiconductor layer; forming a second semiconductor layer containing aluminum in the groove; forming a third semiconductor layer on the first semiconductor layer and the second semiconductor layer; forming an insulating layer on the third semiconductor layer covering the region opposite the second semiconductor layer; forming a stripe-shaped structure by etching the first semiconductor layer and the third semiconductor layer without exposing the second semiconductor layers using the insulating layer as a mask; and burying the stripe-shaped structure with burying layers. | 08-06-2009 |
| 20090203161 | SEMICONDUCTOR LASER DIODE WITH A RIDGE STRUCTURE BURIED BY A CURRENT BLOCKING LAYER MADE OF UN-DOPED SEMICONDUCTOR GROWN AT A LOW TEMPERATURE AND METHOD FOR PRODUCING THE SAME - The present invention provides a laser diode with a current blocking layer without a pn-junction. The laser diode includes a lower cladding layer, an active region and an upper cladding layer on the GaAs substrate in this order. The active region includes first and second regions. The upper cladding layer, which includes a ridge structure, locates on the first region, while, the current blocking region is on the second region of the active region so as to sandwich the ridge structure. The current blocking layer of the invention is made of one of un-doped GaInP and un-doped AlGaInP grown at a relatively low temperature and shows high resistance greater than 10 | 08-13-2009 |
| 20090209055 | Method to fabricate semiconductor optical device - A process for the semiconductor laser diode is disclosed, which prevents the abnormal growth occurred at the second growth for the burying region of the buried hetero structure. The ICP (Induction-Coupled Plasma) CVD apparatus forms a silicon oxide file with a thickness of above 2 μm as adjusting the bias power P | 08-20-2009 |
| 20090275160 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - After a p-type cladding layer, an etching rate reducing layer and a p-type contact layer are formed in order on an n-type substrate, an etching mask is formed. Then, by using the etching mask, the p-type contact layer, the etching rate reducing layer and the p-type cladding layer are partially etched in the region outside the etching mask with an etchant. At this time, the etching rate of the layers by the etchant is slower in the etching rate reducing layer than in the p-type cladding layer and the p-type contact layer. Then, a metal thin film is formed such that the film continuously coats an upper surface and side surfaces of a ridge consisting of the above layers left after the etching step. A normal vector at a surface coated with the thin film has an upward component. | 11-05-2009 |
| 20090305447 | IMPLANTED VERTICAL CAVITY SURFACE EMITTING LASER - A method of forming a gain guide implant for a vertical cavity surface emitting laser (VCSEL) comprises implanting ions into a wafer to simultaneously form a first non-conducting portion of the gain guide implant spaced apart from an active region and a second non-conducting portion of the gain guide implant occupying the active region, the first non-conducting portion laterally offset relative to the second non-conducting portion. | 12-10-2009 |
| 20100003778 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER - A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film. | 01-07-2010 |
| 20100009483 | METHOD FOR FABRICATING A NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE - An exemplary method includes the following steps. First, a substrate is provided. Second, a nitride-based multi-layered structure is epitaxially grown on the substrate. The multi-layered structure includes a first-type layer, an active layer, and a second-type layer arranged one on the other in that order along a direction away from the substrate. A crystal growth orientation of the multi-layered structure intersects with a <0001> crystal orientation thereof. Thirdly, the multi-layered structure is patterned to form a mesa structure thereof, wherein the first-type layer is partially exposed to form an exposed portion. The mesa structure has a top surface facing away from the substrate, and side surfaces adjacent to the top surface. Fourthly, a first-type electrode and a second-type electrode are formed in ohmic contact with the first-type layer and the second-type layer, respectively. Finally, the top and side surfaces of the patterned multi-layered structure are wet etched. | 01-14-2010 |
| 20100151611 | Method for manufacturing semiconductor laser - A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group III-V compound semiconductor layer, etching the nitride-based group III-V compound semiconductor layer to a predetermined depth using the mask layer to form the ridge stripe, forming a resist to cover the mask layer and the nitride-based group III-V compound semiconductor layer, etching-back the resist until the stripe-shaped mask portion of the mask layer is exposed, removing the exposed mask portion of the mask layer by etching to expose the upper surface of the ridge stripe, forming a metal film on the resist and the exposed ridge stripe to form an electrode on the ridge stripe, removing the resist together with the metal film formed thereon, and removing the mask layer by etching. | 06-17-2010 |
| 20100190283 | METHOD TO FORM SEMICONDUCTOR LASER DIODE WITH MESA STRUCTURE BURIED BY CURRENT BLOCKING LAYER - A method to form a an LD with the buried mesa type is disclosed, in which the n-type current blocking layer is stably kept with a distance to the active layer in the buried mesa. The method of the invention includes a step to form the mesa by iterating the RIE and the ashing to obtain in a mesa side a steep edge with the (110) surface. A wet-etching process subsequent to the iterative etching and ashing removes residuals left on the mesa side. Then, the growth of the current blocking layer shows two modes of the horizontal growth of the (110) surface and the vertical growth of the (001) surface comparably. | 07-29-2010 |
| 20100216268 | MANUFACTURING METHOD OF A SEMICONDUCTOR ELEMENT - A method of manufacturing a semiconductor element of good characteristics at a reduced manufacturing cost is provided. The manufacturing method of the semiconductor element includes a GaN-containing semiconductor layer forming step, an electrode layer forming step, a step of forming an Al film on the GaN-containing semiconductor layer, a step of forming a mask layer made of a material of which etching rate is smaller than that of a material of the Al film, a step of forming a ridge portion using the mask layer as a mask, a step of retreating a position of a side wall of the Al film with respect to a position of a side wall of the mask layer, a step of forming, on the side surface of the ridge portion and the top surface of the mask layer, a protective film made of a material of which etching rate is smaller than that of the material forming the Al film, and a step of removing the Al film and thereby removing the mask layer and a portion of the protective film formed on the top surface of the mask layer. | 08-26-2010 |
| 20100248406 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer. The method includes forming the ridge; forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge; and forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film. | 09-30-2010 |
| 20100285625 | LIGHT-EMITTING ELEMENT ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME - A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer. | 11-11-2010 |
| 20110256651 | METHOD FOR FABRICATING LIGHT-EMITTING DEVICES WITH VERTICAL LIGHT-EXTRACTION MECHANISM - A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. | 10-20-2011 |
| 20110263061 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNED SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions. | 10-27-2011 |
| 20120135557 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A method for producing a Group III nitride semiconductor light-emitting device includes forming a first stripe-pattern embossment on the top surface of a sapphire substrate, so that first grooves parallel to the x-axis direction (the c-axis direction of the sapphire substrate) are periodically arranged at specific intervals. Subsequently, an insulating film is formed over the entire surface of the first stripe-pattern embossment. Next, a second stripe-pattern embossment is formed so that second grooves, each having a flat bottom surface, are periodically arranged at specific intervals and parallel to the y-axis direction, which is orthogonal to the x-axis direction. A GaN crystal is grown through MOCVD on side surfaces of each second groove of the sapphire substrate, to thereby form, on the sapphire substrate, an m-plane GaN base layer. An LED device structure is formed on the base layer, to thereby produce a light-emitting device. | 05-31-2012 |
| 20120190146 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMMITING DEVICE - According to one embodiment, in a method for manufacturing a semiconductor light emitting device, a transparent conductive film is formed on a semiconductor laminated body of a multilayer structure containing a light emitting unit. The transparent conductive film is a film transmissive to a light of a luminescence wavelength from the light emitting unit. A mask is formed on the portion of the transparent conductive film. The transparent conductive film is removed by wet etching through the mask so as to expose the semiconductor laminated body. The semiconductor laminated body is removed by anisotropically etching through the mask so as to remove the light emitting unit. The mask is removed. A first electrode is formed on the portion of the semiconductor laminated body exposed after removing the light emitting unit. A second electrode is formed on the portion of the transparent conductive film. | 07-26-2012 |
| 20120309123 | METHOD FOR MANUFACTURING QUANTUM CASCADE LASER - A method for manufacturing a quantum cascade laser includes the steps of forming a semiconductor stacked structure including a first semiconductor region and a second semiconductor region; forming an etching mask having a striped pattern on the second semiconductor region; forming a semiconductor mesa structure having a mesa shape in cross section by etching the first and second semiconductor regions using the etching mask; forming an insulating layer over a top portion and side surfaces of the semiconductor mesa structure and the first semiconductor region; forming an opening in a portion of the insulating layer that is disposed on the top portion of the semiconductor mesa structure; and forming an electrode over the inside of the opening of the insulating layer, the top portion and side surfaces of the semiconductor mesa structure, and the first semiconductor region. | 12-06-2012 |
| 20130244363 | METHOD FOR PRODUCING OPTICAL SEMICONDUCTOR DEVICE - A method for producing an optical semiconductor device includes the steps of forming a semiconductor structure; forming a mask on the semiconductor structure; etching the semiconductor structure with the mask to form first and second stripe-shaped grooves and a mesa portion; forming a protective film on a top surface and side surfaces of the mesa portion; forming a resin portion on the protective film; etching the resin portion and the protective film formed on the top surface; forming an upper electrode on the top surface; and forming an electrical interconnection on the resin portion. The resin portion has an inclined surface region that rises from a first point above the mesa portion toward a second point above the first stripe-shaped groove. The step of etching the resin portion and the protective film includes the substeps of etching the resin portion and simultaneously etching the resin portion and the protective film. | 09-19-2013 |
| 20130267054 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer. | 10-10-2013 |
| 20140248729 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer. | 09-04-2014 |
| 20140302628 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer. | 10-09-2014 |
| 20150037919 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER - A method of manufacturing a semiconductor laser according to an aspect of the present invention includes (a) sequentially epitaxially growing a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate composed of InP or GaAs and having a plane index of (100), (b) forming a plurality of growth start surfaces having a plane index greater than (100) in an upper surface of the second cladding layer, and (c) epitaxially growing a third cladding layer containing zinc in the plurality of growth start surfaces of the second cladding layer. | 02-05-2015 |
| 20150050768 | LASER DIODE DEVICE AND METHOD OF MANUFACTURING LASER DIODE DEVICE - A laser diode device includes: a semiconductor substrate including a semi-polar surface, the semiconductor substrate being formed of a hexagonal III-nitride semiconductor; an epitaxial layer including a light emitting layer, the epitaxial layer being formed on the semi-polar surface of the semiconductor substrate, and the epitaxial layer including a ridge section; a first electrode formed on a top surface of the ridge section; an insulating layer covering the epitaxial layer in an adjacent region of the ridge section and a side surface of the ridge section, the insulating layer covering part or all of side surfaces of the first electrode continuously from the epitaxial layer; a pad electrode formed to cover a top surface of the first electrode and the insulating layer, the pad electrode being electrically connected to the first electrode; and a second electrode formed on a surface, of the semiconductor substrate, opposite to the semi-polar surface. | 02-19-2015 |
| 20160149077 | LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer. | 05-26-2016 |
| 20160163746 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a display device including forming one or more thin-film transistors (“TFTs”) each configured to include an active layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode on a substrate. A storage capacitor including a first storage electrode and a second storage electrode overlapping the first storage electrode with the gate insulating layer interposed there between is also formed on the substrate. A top surface of the first storage electrode may include hillocks and the gate insulating layer is formed between the first storage electrode and the second storage electrode to conform to the shape of the top surface of the first storage electrode with the hillocks. | 06-09-2016 |
| 20160172532 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE | 06-16-2016 |
| 20160190455 | METHOD FOR MANUFACTURING ORGANIC LIGHT-EMITTING DEVICE - The present application relates to a method of preparing an organic light emitting device. The method of preparing the organic light emitting device according to the present application includes: 1) forming a first electrode on a substrate; 2) forming an auxiliary electrode on at least a partial region on the first electrode; 3) forming an insulating layer on the auxiliary electrode, and forming an overhang structure, in which the insulating layer has a greater width than that of the auxiliary electrode; and 4) forming a second electrode on the first electrode and the insulating layer, so that the second electrode provided on the first electrode and the second electrode provided on the insulating layer are electrically short-circuited to each other. | 06-30-2016 |
| 20160197456 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | 07-07-2016 |
| 20170237230 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE | 08-17-2017 |
| 438040000 | Tapered etching | 8 |
| 20080305569 | Semiconductor Device and a Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. | 12-11-2008 |
| 20090142869 | Method of producing semiconductor optical device - Si atoms obtained by thermal decomposition of SiH | 06-04-2009 |
| 20100047947 | Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing - A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of θ | 02-25-2010 |
| 20110124139 | METHOD FOR MANUFACTURING FREE-STANDING SUBSTRATE AND FREE-STANDING LIGHT-EMITTING DEVICE - The present invention provides a method for manufacturing a free-standing substrate, comprising: growing a first layer having a sacrificial layer on a growth substrate; patterning the first layer into a patterned first layer having a structure of a plurality of protrusions; growing a second layer on the patterned first layer having a structure of a plurality of protrusions by epitaxial lateral overgrowth; and separating the second layer from the growth substrate by etching away the sacrificial layer, wherein the separated second layer functions as a free-standing substrate for epitaxy. Also, the present invention provides a method for manufacturing a free-standing light-emitting device, comprising: growing a first layer having a sacrificial layer on a growth substrate; patterning the first layer into a patterned first layer having a structure of a plurality of protrusions; growing a second layer on the patterned first layer having a structure of a plurality of protrusions by epitaxy growth; forming a reflecting layer on the second layer; forming a conductive substrate on the reflecting layer; and separating the second layer, the reflecting layer, and the conductive substrate from the growth substrate by etching away the sacrificial layer, so as to form a free-standing light-emitting device. | 05-26-2011 |
| 20110124140 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor laser device includes a chip obtained from a substrate and a semiconductor multi-layer formed on the substrate. The semiconductor multi-layer is formed from a plurality of semiconductor layers of a semiconductor material having a hexagonal structure, and includes a stripe-shaped wave guide portion. The chip includes two chip end facets that extend in a direction crossing an extending direction of the wave guide portion. Each of regions on both sides of the wave guide portion in at least one of the chip end facets has a notch portion formed by notching a part of the chip, and the notch portion exposes a first wall surface connecting to the chip end facet and a second wall surface connecting to the chip side facet. An angle between an extending direction of the first wall surface in at least one of the two notch portions and an extending direction of the cleavage facet is in a range of about 10 degrees to about 40 degrees. | 05-26-2011 |
| 20120122257 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, FABRICATION METHOD THEREOF, CONVEX PART FORMED ON BACKING, AND CONVEX PART FORMATION METHOD FOR BACKING - A convex part formation method of forming a convex part in parallel with a < | 05-17-2012 |
| 20130017638 | PROCESS FOR MANUFACTURING BURIED HETERO-STRUCTURE LASER DIODESAANM TSUJI; YukihiroAACI Yokohama-shiAACO JPAAGP TSUJI; Yukihiro Yokohama-shi JP - A process for manufacturing buried hetero-structure laser diodes includes the steps of forming a stacked semiconductor layer on a substrate; forming a mask layer on the stacked semiconductor layer; forming a semiconductor mesa by etching the stacked semiconductor layer through the mask layer; forming an overhang of the mask layer by selectively etching the stacked semiconductor layer of the semiconductor mesa; selectively growing a buried layer on a side surface of the semiconductor mesa while leaving the mask layer on the semiconductor mesa; forming a lateral portion of the buried layer, the lateral portion having a side surface adjacent to the side surface of the semiconductor mesa; after forming the lateral portion of the buried layer, removing the mask layer on the semiconductor mesa; and forming an electrode on a top surface of the semiconductor mesa and on the side surface of the lateral portion of the buried layer. | 01-17-2013 |
| 20130309795 | METHOD FOR MANUFACTURING LED CHIP WITH INCLINED SIDE SURFACE - A method for manufacturing an LED chip is disclosed wherein a substrate is provided. A first semi-conductor layer is formed on the substrate. A photoresist layer with an inverted truncated cone shape and a blocking layer with an inclined inner surface facing and surrounding the photoresist layer are formed on the first semi-conductor layer. The photoresist layer is removed and an epitaxial region surrounded by the blocking layer is defined. A lighting structure is formed inside the epitaxial region. The blocking layer is then removed and the first semi-conductor layer is exposed. Electrodes are formed and respectively electrically connected to the first semi-conductor layer and the lighting structure. | 11-21-2013 |
