Entries |
Document | Title | Date |
20080206909 | Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof - A conventional composition of carbon nitride has a deposition method and properties limited. In the case of using the composition of carbon nitride as a protective film, for example, a material of an object to be coated (goods) is required to satisfy with a condition in disagreement with a temperature during forming the composition of carbon nitride. Besides, in the case of using the composition of carbon nitride as an insulating film in a semiconductor device, low stress relaxation and low coverage for a step are produced since the insulating film has a low hydrogen concentration. | 08-28-2008 |
20080233665 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device including: forming a semiconductor layer on a substrate with transistor and capacitor formation regions; forming first and second photo resist patterns at the transistor and capacitor formation regions, respectively, the second photo resist pattern having a thickness less than that of the first photo resist pattern; patterning the semiconductor layer using the first and second photo resist patterns as a mask; removing the second photo resist pattern to expose the semiconductor layer at the capacitor formation region; implanting ions in the exposed semiconductor layer to form a first electrode of a capacitor; removing the first photo resist pattern; forming a gate electrode at the transistor formation region; forming an second electrode at the capacitor formatting region; and forming a source region and a drain region at the semiconductor layer formed at both sides of the gate electrode. | 09-25-2008 |
20090068773 | METHOD FOR FABRICATING PIXEL STRUCTURE OF ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE - A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate. | 03-12-2009 |
20090203157 | DISPLAY APPARATUS - A configuration for decreasing the leakage electric current of a transistor for control for controlling an electric potential holding operation of a control electrode of a transistor for drive for flowing an electric current through a display device by adjusting the output electric potential of an electric potential source is disclosed. | 08-13-2009 |
20100062551 | Method of Separating Light-Emitting Diode from a Growth Substrate - A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge. | 03-11-2010 |
20100075447 | METHOD OF MANUFACTURING A FLEXIBLE DEVICE AND METHOD OF MANUFACTURING A FLEXIBLE DISPLAY - Provided are a method of separating a metal layer and an organic light emitting diode. A method of manufacturing a flexible device and a method of manufacturing a flexible display include forming a releasing layer on a substrate, forming a metal layer on the releasing layer, forming an insulating layer on the metal layer, forming a releasable layer on the insulating layer, bonding a plastic to the releasable layer, and separating the substrate and the releasing layer at an interface therebetween to manufacture a flexible device. Since the conventional process equipment using the glass substrate can be compatibly used, the manufacturing cost can be reduced. In addition, since the glass substrate has less limitation in the process temperature compared with the plastic substrate, an electric device having a superior performance can be manufactured. Furthermore, the glass substrate has good thermal/chemical stability and is less deformed compared with the plastic substrate, whereby process control such as substrate alignment becomes easy. | 03-25-2010 |
20100136722 | ORGANIC ELECTRO LUMINESCENCE DEVICE AND FABRICATION METHOD THEREOF - An organic electro luminescence device and a fabrication method thereof are provided. An array element is formed on a first substrate and an electro luminescent diode is formed on a second substrate. The array element and the electro luminescent diode are electrically connected together by a spacer. A separator divides a sub pixel into a first region and a second region. In the electro luminescent diode, an anode electrode is formed over the first and second regions. An organic electro luminescent layer and a cathode electrode are formed on the anode electrode of one of the first and second regions. | 06-03-2010 |
20100136723 | DUAL PANEL-TYPE ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - A dual panel-type organic electroluminescent display device includes a first substrate on which gate and data lines cross each other to define sub-pixels. Array elements are disposed at the sub-pixels on the first substrate. A first electrode is disposed on substantially the entire surface of a second substrate opposing the first substrate. An insulating pattern is disposed on the first electrode, an organic electroluminescent layer is disposed on the first electrode, and a second electrode is disposed on the organic electroluminescent layer at each sub-pixel. A connection pattern connects the array element and the second electrode at each sub-pixel. The connection pattern contacts the second electrode under the insulating pattern. | 06-03-2010 |
20100144070 | IC CARD AND BOOKING-ACCOUNT SYSTEM USING THE IC CARD - It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm. | 06-10-2010 |
20100144071 | PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer. | 06-10-2010 |
20100159619 | METHOD FOR CRYSTALLIZING THIN FILM, METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A gate insulating film ( | 06-24-2010 |
20100167435 | Organic electro luminescence device and fabrication method thereof - Provided is a method of fabricating an organic electro luminescence device, the method comprising: forming a thin film transistor on a substrate; forming a passivation layer and a first electrode on the substrate including the thin film transistor; forming a contact hole exposing an upper surface of a drain electrode of the thin film transistor at a predetermined portion of the first electrode and the passivation layer; forming a buffer layer and a barrier rib on a predetermined portion of an upper surface of the first electrode; forming an organic emission layer within a region defined by the buffer layer; and forming a second electrode on the organic emission layer such that the second electrode is electrically connected with the drain electrode through the contact hole. | 07-01-2010 |
20100197054 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device according to the present invention has the steps of: preparing a first member which has an emission layer on a substrate having a compound semiconductor layer through an etch stop layer and a sacrifice layer; forming a bonded structure by bonding the first member on a second member including a silicon layer so that the emission layer is positioned in the inner side; providing a through groove in the substrate so that the etch stop layer is exposed, by etching the first member from the reverse side of the emission layer; and removing the substrate having the through groove provided therein from the bonded structure by etching the sacrifice layer. | 08-05-2010 |
20100203656 | METHOD FOR THE MANUFACTURE OF AN ACTIVE MATRIX OLED DISPLAY - In a method for the manufacture of an active matrix OLED display, at least two thin-film transistors and one storage capacitor are provided to drive each pixel, with a reduced number of photolithographic patterning steps. | 08-12-2010 |
20100203657 | METHOD OF FABRICATING LIGHT EMITTING DEVICE - A method of fabricating a light emitting device includes forming a plurality of light emitting elements on light emitting element mounting regions, respectively, of a substrate, forming lens supports on the light emitting element mounting regions, respectively, are raised relative to isolation regions of the substrate located between neighboring ones of the light emitting element mounting regions, and forming lenses covering the light emitting elements on the lens support patterns, respectively. | 08-12-2010 |
20100240157 | DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, AND TELEVISION RECEIVER - The present invention discloses a method for manufacturing a display device comprising the steps of forming a first film pattern using a photosensitive material over a substrate, forming a second film pattern in such a way that the first film pattern is exposed by being irradiated with a laser beam, modifying a surface of the second film pattern into a droplet-shedding surface, forming a source electrode and a drain electrode by discharging a conductive material to an outer edge of the droplet-shedding surface by a droplet-discharging method, and forming a semiconductor region, a gate-insulating film, and a gate electrode over the source electrode and the drain electrode. | 09-23-2010 |
20100285618 | Pixel Structure of LCD and Fabrication Method Thereof - In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transistor to decrease photo-leakage-current. | 11-11-2010 |
20110014730 | Method for Manufacturing Light Emitting Device - An object of the present invention is to provide a new light emitting element with little initial deterioration, and a display device in which initial deterioration is reduced and variation in deterioration over time is reduced by a new method for driving a display device having the light emitting element. One feature of the invention is that a display device comprising a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a mixed layer of metal oxide and an organic compound provided between the first electrode and the second electrode is subjected to aging drive. | 01-20-2011 |
20110027920 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained. | 02-03-2011 |
20110033960 | ORGANIC LIGHT EMITTING DIODE DEVICE - An organic light emitting diode (OLED) device according to the present invention includes a first substrate; a first electrode on the first substrate in the pixel region, the first electrode formed of a metal; an organic light-emitting layer on the first electrode; a second electrode on the organic light-emitting layer, the second electrode formed of a transparent conductive material; and a transparent layer on the second electrode, the transparent layer including an inorganic material or a semiconductor material. | 02-10-2011 |
20110070671 | FABRICATING METHOD OF A PIXEL UNIT - A method for fabricating a pixel unit is provided. A TFT is formed on a substrate. A protection layer and a patterned photoresist layer are sequentially formed on the substrate entirely. A patterned protection layer is formed by using the patterned photoresist layer as a mask and partially removing the protection layer, wherein the patterned protection layer has an undercut located at a sidewall thereof. A pixel electrode material layer is formed to cover the substrate, the TFT and the patterned photoresist layer, wherein the electrode material layer is disconnected at the undercut and exposes the undercut. A pixel electrode electrically connected to the TFT is formed by lifting off the patterned photoresist layer and parts of the electrode material layer covering the patterned photoresist layer simultaneously through a stripper, wherein the stripper permeates from the undercut to an interface of the patterned photoresist layer and the patterned protection layer. | 03-24-2011 |
20110097830 | SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME - In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask. | 04-28-2011 |
20110104833 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display is disclosed. The display has a pixel which includes a transistor and a capacitor. The active layer of the transistor and at least one of the electrodes of the capacitor comprise a semiconductor oxide. | 05-05-2011 |
20110117685 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - A method of manufacturing an organic light emitting diode display, the method including forming an amorphous silicon layer on a buffer layer disposed on substrate, heat-treating the amorphous silicon film to form a microcrystalline silicon film; and scanning and irradiating a linear laser beam twice or more onto the microcrystalline silicon film to form a polysilicon film, wherein a subsequent scanning of the linear laser beam partially overlaps previous scanning of the linear laser beam in a width direction. | 05-19-2011 |
20110143465 | Method for Forming a Pixel of an Electroluminescence Device having Storage Capacitors - A method for forming a pixel of an electroluminescence device includes providing a substrate; defining at least a first area for capacitors and a second area for a transistor on the substrate; forming a first conductive layer over the first area; forming a first dielectric layer over the first conductive layer; forming a second conductive layer over the first dielectric layer; forming a second dielectric layer over the second conductive layer; forming a third conductive layer over the second dielectric layer; forming a layer of capping silicon nitride between the second dielectric layer and the third conductive layer; forming a semiconductor layer over the second area; forming a gate oxide layer over the second area; and forming a fourth conductive layer over the gate oxide layer. | 06-16-2011 |
20110151600 | METHOD OF MANUFACTURING DISPLAY DEVICE - In a method of manufacturing a display device, a first insulating layer is formed on a semiconductor pattern. Ions of a first concentration are injected into source and drain domains of the semiconductor pattern and a lower electrode of the semiconductor pattern by using a mask pattern that selectively overlaps a channel domain of the semiconductor pattern and is positioned on the top of the first insulating layer. The mask pattern is removed. An ion injection process of injecting ions of a second concentration lower than the first concentration into the semiconductor pattern of the channel domain is directly performed in the first insulating layer. A gate electrode that overlaps the channel domain is formed on the top of the first insulating layer. An upper electrode that overlaps the lower electrode is formed on the top of the first insulating layer. | 06-23-2011 |
20110151601 | CRYSTALLIZATION METHOD, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING DISPLAY DEVICE - A crystallization method, a method of manufacturing a thin-film transistor, and a method of manufacturing a display device are provided. The crystallization method comprises: forming a backup amorphous silicon layer on a substrate, forming nickel particles on the backup amorphous silicon layer, converting the backup amorphous silicon layer into an amorphous silicon layer by thermally processing the backup amorphous silicon layer so as to diffuse the nickel particles throughout said backup amorphous silicon layer; and irradiating the amorphous silicon layer with energy from a laser. | 06-23-2011 |
20110207248 | Light Emitting Device and Manufacturing Method Thereof - The concentration of oxygen, which causes problems such as decreases in brightness and dark spots through degradation of electrode materials, is lowered in an organic light emitting element having a layer made from an organic compound between a cathode and an anode, and in a light emitting device structured using the organic light emitting element. The average concentration of impurities contained in a layer made from an organic compound used in order to form an organic light emitting element having layers such as a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer, is reduced to 5×10 | 08-25-2011 |
20110207249 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE AND FABRICATING METHOD THEREOF - An organic electro-luminescence display device includes at least one light emission device, the organic light emission device having a first electrode; at least one thin film transistor for driving the light emission device, a pixel electrode being connected to the at least one thin film transistor; a conductive layer formed of a conductive polymer material to electrically connect the light emission device and the pixel electrode. | 08-25-2011 |
20110306154 | METHOD OF FORMING A DISPLAY DEVICE BY USING SEPARATE MASKS IN FORMING SOURCE AND DRAIN REGIONS OF MOS TRANSISTORS - A method of forming a display device is provided. The method includes the following steps: providing a substrate which includes a driving circuit region and a pixel region; forming a first island and a second island in the driving circuit region on the substrate with a semiconductor material; performing a first ion implantation process to dope ions into both of the first island and the second island; forming a first patterned mask on the substrate to cover the second island and expose a part of the first island; performing a second ion implantation process by using the first patterned mask as a mask to form a first source/drain region in the first island; removing the first patterned mask; forming a first gate and a second gate on the first island and the second island respectively; forming a second patterned mask on the substrate to cover the first island and expose a part of the second island; and performing a third ion implantation process by using both of the second patterned mask and the second gate as a mask to form a second source/drain region in the second island. The first island, the first source/drain region, and the first gate form a NMOS device, and the second island, the second source/drain region, and the second gate form a PMOS device. | 12-15-2011 |
20120003762 | Method to Protect Compound Semiconductor from Electrostatic Discharge Damage - A method to protect compound semiconductors from electrostatic discharge (ESD) damage, includes several processes as following: (a) forming a light emitting diode semiconductor over a substrate, in which the light emitting diode semiconductor has multi-layer structure and a first and a second electrodes; (b) forming a conductor-insulator-conductor (CIC) layers capacitance flip chip substrate including a first and a second conductive layers, and an insulator layer made of high-K material, in which the insulator layer is formed between the first and the second conductive layers, and there are a third and a fourth electrodes on the conductor-insulator-conductor layers substrate; and (c) electrically connecting the first electrode and the second electrode of the light emitting diode semiconductor to the third electrode and the fourth electrode of the conductor-insulator-conductor layers capacitance flip chip substrate, respectively, to effectively prevent from electrostatic discharge damage. | 01-05-2012 |
20120003763 | MULTITHICKNESS LAYERED ELECTRONIC-PHOTONIC DEVICES - An apparatus comprising an electronic-photonic device. The device includes a planar substrate having a top layer on a middle layer, active electronic components and active photonic waveguide components. The active electronic components are located on first lateral regions of the top layer, and the active photonic waveguide components are located on second lateral regions of the top layer. The second-region thickness is greater than the first-region thickness. The top layer has a higher refractive index than the middle layer. | 01-05-2012 |
20120028385 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR SUBSTRATE OF LIQUID CRYSTAL DISPLAY PANEL - A manufacturing method of thin film transistor substrate of a liquid crystal display panel includes following steps. A substrate is provided. Then, a transparent conducting layer and an opaque conducting layer are formed on the substrate. Thereafter, the transparent conducting layer and the opaque conducting layer are patterned by a gray-tone mask to form at least one storage capacitor electrode. Next, a first insulating layer is formed on the storage capacitor electrode. Then, at least one gate electrode is formed on the substrate. Subsequently, at least one gate insulating layer, a patterned semiconductor layer, a source electrode, a drain electrode, and a second insulating layer are formed sequentially on the gate electrode. Moreover, at least one pixel electrode is formed on the first insulating layer and the second insulating layer. A part of the pixel electrode overlaps a part of the storage capacitor electrode to form a storage capacitor. | 02-02-2012 |
20120028386 | Method of manufacturing organic light emitting display - A method of manufacturing an organic light-emitting display device, the method including forming a thin film transistor (TFT); forming a planarization layer on the TFT; forming an opening in the planarization layer; and forming an organic light emitting diode that is electrically connected to the TFT through the opening, wherein forming the opening in the planarization layer includes forming a photosensitive layer on the planarization layer, and irradiating light on the photosensitive layer such that the light has a focus point offset from a surface of the planarization layer to control a gradient of the opening. | 02-02-2012 |
20120028387 | DUAL PANEL TYPE ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD FABRICATING THE SAME - An organic electroluminescent device includes: a switching element and a driving element connected to each other on a substrate including a pixel region; a planarization layer on the switching element and the driving element, the planarization layer having a substantially flat top surface; a cathode on the planarization layer, the cathode connected to the driving element; an emitting layer on the cathode; and an anode on the emitting layer. | 02-02-2012 |
20120040478 | ORGANIC EL DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - An organic electroluminescence display panel includes a thin-film transistor layer above a substrate. A planarizing film is above the thin-film transistor layer with contact holes being formed in the planarizing film. A bank is above the planarizing film. The bank includes openings arranged in rows and columns that define regions for forming organic electroluminescence elements. Each opening is between a pair of adjacent concaves in one of the columns. The concaves are formed in an upper surface of the bank and sunken into the contact holes. The upper surface of the bank has repellency. A light-emitting layer is formed in each opening by ejecting drops of an ink from nozzles of an inkjet head into the openings while moving the inkjet head relative to the substrate. The nozzles further eject drops of the ink into the concaves when above the concaves for ejecting the drops of the ink through every nozzle. | 02-16-2012 |
20120115260 | ORGANIC LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A top emission OLED includes a driving TFT including a channel region and source and drain electrodes. A power supply, a ground line, and a light emitting diode are electrically coupled to the TFT and an auxiliary electrode is electrically coupled to the ground line and to the source electrode of the driver transistor. The auxiliary electrode resides between the light emitting diode and the channel region of the driver transistor and is configured to shield the channel region of the driver transistor from an electric field generated by the light emitting diode. | 05-10-2012 |
20120164766 | METHOD OF FABRICATING AN ACTIVE DEVICE ARRAY AND FABRICATING AN ORGANIC LIGHT EMITTING DIODE ARRAY - Methods of fabricating active device array and organic light emitting diode array are provided. A first pattern metal layer is formed over a substrate. An oxide semiconductor layer is formed entirely over the substrate. A first insulation layer covering the first patterned metal layer and the oxide semiconductor layer is formed entirely on the substrate. A second patterned metal layer is formed on the first insulation layer. The oxide semiconductor layer and the first insulation layer is patterned by using the second patterned metal layer as a mask to form a first patterned oxide semiconductor layer and a first patterned insulation layer. A second insulation layer is entirely formed on the substrate. A second patterned oxide semiconductor layer is formed over the second insulation layer. A third patterned metal layer is formed over the second insulation layer. | 06-28-2012 |
20120171787 | Method for Forming a Pixel of an Electroluminescence Device having Storage Capacitors - A method is provided for forming a pixel of an electroluminescence device. The method provides a substrate; defines at least a first area for capacitors, a second area for a transistor on the substrate and a third area for an organic light-emitting diode (OLED) on the substrate; forms first conductive, first dielectric, second conductive, second dielectric, and third conductive layers over the first area; forming a third conductive layer over the second dielectric layer over the first area; wherein the first conductive layer over the first area is directly connected to a power supply voltage, wherein the second conductive layer is electrically connected to a fourth conductive layer and wherein the first conductive layer, the first dielectric layer, and the second conductive layer over the first area collectively form a first one of the capacitors over the first area, the second conductive layer, the second dielectric layer. | 07-05-2012 |
20120208303 | Lighting Device, Light-Emitting Device, and Manufacturing Method and Manufacturing Apparatus Thereof - The sizes of an evaporation mask used for a full-color light-emitting device and an evaporation mask used for a lighting device are different from each other. For this reason, separate evaporation masks are necessary, and in the case of processing a large number of substrates at once, many evaporation masks are prepared in accordance with the number of substrates to be processed, thereby increasing the total footprint of a manufacturing apparatus. One object of the present invention is to solve a problem of such an increase. A full-color display device can be manufactured by using a color filter and white light-emitting elements in combination. By this manner, a manufacturing line for the light-emitting device can have some steps in common with a manufacturing line for the lighting device; consequently, the total footprint of the manufacturing apparatus is reduced. | 08-16-2012 |
20120208304 | PROCESS OF MANUFACTURING LUMINESCENT DEVICE - A method for manufacturing a luminescent device including a luminescent layer between a pair of electrodes is provided. The luminescent layer is formed by spreading a solution including an iridium complex. The solution is in a fog state by hitting a heated gas to the solution ejected from a nozzle arranged in a chamber. A substrate over which the luminescent layer is formed is heated while the luminescent layer is formed. | 08-16-2012 |
20120208305 | FABRICATING METHOD OF A PIXEL UNIT - A method for fabricating a pixel unit is provided. A TFT is formed on a substrate. A protection layer and a patterned photoresist layer are sequentially formed on the substrate entirely. A patterned protection layer is formed by using the patterned photoresist layer as a mask and partially removing the protection layer, wherein the patterned protection layer has an undercut located at a sidewall thereof A pixel electrode material layer is formed to cover the substrate, the TFT and the patterned photoresist layer, wherein the electrode material layer is disconnected at the undercut and exposes the undercut. A pixel electrode electrically connected to the TFT is formed by lifting off the patterned photoresist layer and parts of the electrode material layer covering the patterned photoresist layer simultaneously through a stripper, wherein the stripper permeates from the undercut to an interface of the patterned photoresist layer and the patterned protection layer. | 08-16-2012 |
20130011944 | STORAGE OF AN IMAGE IN AN INTEGRATED CIRCUIT - An integrated circuit including a substrate of a semiconductor material and first metal portions of a first metallization level or of a first via level defining pixels of an image. The pixels are distributed in first pixels, for each of which the first metal portion is connected to the substrate, and in second pixels, for each of which the first metal portion is separated from the substrate by at least one insulating portion. | 01-10-2013 |
20130017630 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - Provided are a crystallization apparatus and method, which prevent cracks from being generated, a method of manufacturing a thin film transistor (TFT), and a method of manufacturing an organic light emitting display apparatus. The crystallization apparatus includes a chamber for receiving a substrate, a first flash lamp and a second flash lamp, which are disposed facing each other within the chamber, wherein amorphous silicon layers are disposed on a first surface of the substrate facing the first flash lamp and a second surface of the substrate facing the second flash lamp, respectively. | 01-17-2013 |
20130034919 | METHOD FOR FABRICATING INTEGRATED ALTERNATING-CURRENT LIGHT-EMITTING-DIODE MODULE - A method for fabricating an integrated AC LED module comprises steps: forming a junction layer on a substrate, and defining a first growth area and a second growth area on the junction layer; respectively growing a Schottky diode and a LED on the first growth area and the second growth area; forming a passivation layer and a metallic layer on the Schottky diode, the LED and the substrate. Thereby, the Schottky diode is electrically connected with the LED via the metallic layer. Thus is promoted the reliability of electric connection of diodes, reduced the layout area of the module, and decreased the fabrication cost. | 02-07-2013 |
20130052763 | METHOD OF MANUFACTURING A NANO-ROD AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved. | 02-28-2013 |
20130078748 | METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display and a fabrication method thereof, the display including a substrate; a thin film transistor on the substrate; and an organic light emitting diode on the substrate, the organic light emitting diode including a pixel electrode, an organic emission layer, and a common electrode, wherein the organic emission layer includes a red (R) pixel, a green (G) pixel, and a blue (B) pixel, the pixel electrode includes a first pixel electrode, a second pixel electrode, and a third pixel electrode that respectively correspond to the red pixel, the green pixel, and the blue pixel, the first pixel electrode, the second pixel electrode, and the third pixel electrode each have different thicknesses, and the first pixel electrode, the second pixel electrode, and the third pixel electrode each include a first hydrophobic layer. | 03-28-2013 |
20130109114 | METHOD OF MANUFACTURING ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE | 05-02-2013 |
20130157393 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included. | 06-20-2013 |
20130203193 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - A method of manufacturing an organic light emitting diode (OLED) display is disclosed. In one aspect, the method includes preparing a substrate, forming a spacer on the substrate along an edge of the substrate, forming a driving circuit and an organic light emitting diode on the substrate to be surrounded by the spacer and forming an encapsulation thin film so as to substantially cover the driving circuit and the organic light emitting diodel. The mask that is used in the forming of the driving circuit and the organic light emitting diode is supported by and contacts the spacer. | 08-08-2013 |
20130316474 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same is provided. Semiconductor layers of driving transistors located in two adjacent pixels included in the OLED display device may extend in different lengthwise directions. Thus, striped stains of the OLED display device can be improved. | 11-28-2013 |
20130330850 | ELECTRODE PATTERNING - A method is provided to isolated conductive pads on top of a multi-layer polymer device structure. The method utilizes laser radiation to ablate conductive material and create a non-conductive path, electrically isolating the conductive pads. The process is self-limiting and incorporates at least one layer within the stack that absorbs the radiation at the required wavelength. The prevention of radiation degradation of the underlying layers is achieved, as absorption of radiation occurs primarily on the surface of the structure, but not in any of the radiation sensitive underlying layers of the electronic device. The method preferably uses low energy infrared radiation which has been shown to produce little debris and no device degradation. | 12-12-2013 |
20140004630 | HETEROSTRUCTURE CONTAINING IC AND LED AND METHOD FOR FABRICATING THE SAME | 01-02-2014 |
20140087494 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device and a method of manufacturing the same. In one embodiment, a display device includes a substrate having a pixel region, a transistor region and a capacitor region, a transistor arranged within the transistor region of the substrate and a capacitor arranged within the capacitor region of the substrate, wherein the capacitor includes a lower electrode arranged on the substrate, a gate insulating layer arranged on the lower electrode and an upper electrode arranged on the gate insulating layer and overlapping the lower electrode, the upper electrode includes a first conductive layer and a second conductive layer arranged on the first conductive layer, wherein the first conductive layer is opaque. | 03-27-2014 |
20140141545 | METHOD FOR MANUFACTURING DISPLAY DEVICE - A method for manufacturing a display device includes: forming a deformed layer on a support substrate by a silane coupling agent; performing UV treatment on the deformed layer; forming a thin film substrate on the deformed layer; forming a pixel and an encapsulation member on the thin film substrate; and separating the support substrate from the thin film substrate. | 05-22-2014 |
20140186978 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - Provided is a method of manufacturing an organic light-emitting display apparatus which may reduce white angular dependency (WAD). The method includes forming a common layer on each of subpixel areas at the same time without discretion within one pixel area, the common layer not being formed on connection areas between pixel areas. | 07-03-2014 |
20140199794 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern. | 07-17-2014 |
20140234997 | Light-Emitting Device - This disclosure discloses a light-emitting device, comprising a substrate having a first major surface and a second major surface; a plurality of light-emitting stacks on the first major surface; and at least one electronic device on the second major surface, wherein the light-emitting stacks are electrically connected to each other in series via a first electrical connecting structure; the electronic device are electrically connected to the light-emitting stacks via a second electrical connecting structure. | 08-21-2014 |
20140234998 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed is an organic light-emitting display device capable of preventing the occurrence of cracks at corner regions of an adhesive layer. The organic light-emitting display device includes a first substrate including a plurality of pixels and a second substrate. A thin film transistor (TFT) located at each pixel of the first substrate. A pixel electrode is also located at each pixel. An organic light-emitting unit that emits light is coupled to each pixel electrode. A common electrode is electrically coupled to each organic light-emitting unit. An adhesive layer is coupled to the common electrode. The adhesive layer attaches the first and second substrates. The corner regions of the adhesive layer are rounded in order to control the creation of cracks in the adhesive layer and thereby prevent moisture from entering the active area of the device. | 08-21-2014 |
20140302622 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor. | 10-09-2014 |
20140322836 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY HAVING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC LIGHT-EMITTING DISPLAY - A thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the thin-film transistor array substrate includes a buffer layer formed on a substrate, a first insulating layer formed on the buffer layer, a pixel electrode formed on the first insulating layer using a transparent conductive material, an intermediate layer that covers an upper side and outer side-surfaces of the pixel electrode and includes a organic light-emitting layer, a gap formed by etching the first insulating layer and the buffer layer at a peripheral of the pixel electrode, and a facing electrode that is formed on an upper side and outer side-surfaces of the pixel electrode to cover the intermediate layer and the gap. | 10-30-2014 |
20140342478 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus includes a base substrate, a data line, and a pixel. The data line is disposed on the base substrate to transmit a data signal and has a multi-layer structure including at least three conductive layers stacked one on another. The data line includes a lower conductive layer, an intermediate conductive layer, and an upper conductive layer. The lower conductive layer is disposed on the base substrate, the intermediate conductive layer is disposed on the lower conductive layer and includes copper and aluminum, and the upper conductive layer is disposed on the intermediate conductive layer and includes copper. The pixel is driven in response to the data signal from the data line. | 11-20-2014 |
20140356992 | MANUFACTURING METHOD OF ORGANIC LIGHT EMITTING DISPLAY DEVICE - A manufacturing method of an organic light emitting display device is disclosed which includes: forming a thin film transistor on each sub-pixel region which is defined in a substrate; forming a passivation layer on the substrate provided with the thin film transistor; forming a first electrode of an organic light emitting diode in each sub-pixel region of the passivation layer; forming a bank pattern in boundaries of the sub-pixel region of the passivation layer; forming a photoresist pattern, which exposes a first sub-pixel region, on the bank pattern; forming an organic light emission layer on the first electrode within the first sub-pixel region and an organic material layer on the photoresist pattern by depositing an organic material on the entire surface of the substrate provided with the photoresist pattern; and removing the photoresist pattern and the organic material pattern using a detachment film. | 12-04-2014 |
20140377893 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide a liquid crystal display device capable of displaying a moving image with high image quality by employing a time-division display system (also called a field-sequential system) with the use of a plurality of light-emitting diodes (hereinafter referred to as LEDs) as a backlight. Further, it is an object to provide a liquid crystal display device in which high image quality, full color display, or low power consumption is realized by adjustment of the peak luminance. After a liquid crystal layer is sealed between a pair of substrates, polymer stabilization treatment is performed with the use of UV irradiation from both above and below the pair of substrates at the same time, whereby the polymer included in the liquid crystal layer sandwiched between the pair of substrates is evenly distributed. Thus, a liquid crystal display device is manufactured. | 12-25-2014 |
20150031151 | THIN FILM DEPOSITION APPARATUS, DEPOSITION METHOD USING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS BY USING THE APPARATUS - A thin film deposition apparatus, a deposition method using the same, and a method of manufacturing an organic light-emitting display apparatus by using the apparatus are provided. A thin film deposition apparatus is provided that includes a chamber containing a substrate holder on which a substrate is mounted, a plurality of rotary shaft units that change rotation and an inclination angle of the substrate holder, and a target unit that supplies a thin film material for formation on the substrate. | 01-29-2015 |
20150050758 | METHOD FOR MANUFACTURING FLEXIBLE DISPLAY DEVICE - A method for manufacturing a flexible display device includes forming a separation layer on a carrier substrate, laminating a flexible substrate having an area that is larger than an area of the separation layer, to the separation layer; forming a dummy pattern on and along an edge of the flexible substrate; exposing a portion of the separation layer by removing a portion of the flexible substrate at a side of the flexible substrate; and separating the separation layer and the flexible substrate from each other. | 02-19-2015 |
20150072449 | METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING TOUCH PANEL - A manufacturing method of an organic light emitting diode (“OLED”) display includes: forming a contact pattern on a panel region of a surface of a board glass, where the board glass includes the panel region, and a peripheral area which surrounds the panel region; contacting the paper glass with a surface of the contact pattern corresponding to the panel region and the surface of the board glass corresponding to the peripheral area; adhering the surface of the board glass corresponding to the peripheral area to a surface of the paper glass; forming an organic light emitting element on the paper glass corresponding to the panel region; and separating the paper glass from the board glass by cutting the paper glass at a position corresponding to an end portion of the panel region adjacent to the peripheral area. | 03-12-2015 |
20150072450 | Semiconductor Wafer Bonding Incorporating Electrical and Optical Interconnects - Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods for bonding of semiconductor wafers incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed across the bonding surface using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed across the bonding surface using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers. | 03-12-2015 |
20150111323 | METHOD OF MANUFACTURING EL DISPLAY DEVICE - A method of manufacturing an EL display device having a panel part includes a step of forming film of an element constituting the panel part, by using a vapor deposition equipment. The vapor deposition equipment is equipped with crucible configured to accommodate vapor deposition material, metal case configured to dispose the crucible therein, and heater configured to heat vapor deposition material in the crucible. Case includes container and lid. Container is configured to accommodate crucible with a gap between the container and crucible. Lid is configured to be removably attached to an opening of container, and includes a jetting port through which vapors of vapor deposition material jet out. | 04-23-2015 |
20150118768 | METHOD OF MANUFACTURING EL DISPLAY DEVICE - A method of manufacturing an EL display device having a panel part that comprises a light emitting part in which a plurality of pixels are arrayed, and a thin-film transistor array device to control light emission of the light emitting part. The method includes the following steps: forming the panel part on a substrate, and then forming a sealing layer to cover the panel part. The step of forming the sealing layer is performed by forming a film configuring the sealing layer, with the mask being disposed over base substrate. Mask includes contact part in contact with the base substrate, and edge part disposed over the panel part with a gap between the edge part and the panel part. | 04-30-2015 |
20150118769 | METHOD OF MANUFACTURING EL DISPLAY DEVICE - A method of manufacturing an EL display device having a panel part is such that a constituent element of the panel part is formed through film formation in a vacuum atmosphere. After the constituent element of the panel part has been formed on a substrate in the vacuum atmosphere, the post-film-formation substrate is placed on standby during transporting the substrate from a place in the vacuum atmosphere to a place in an atomospheric | 04-30-2015 |
20150125972 | METHOD OF MANUFACTURING FLEXIBLE DISPLAY DEVICE - Disclosed is a flexible display device and method of manufacturing the same in which a method of manufacturing a flexible display device may include forming a sacrificial layer on a support substrate, the sacrificial layer including at least one barrier layer and a separation layer, the barrier layer having a higher hydrogen content than that of the separation layer; forming a first flexible substrate on the support substrate provided with the sacrificial layer; forming a plurality of device elements on the first flexible substrate; and irradiating a laser onto the sacrificial layer through the support substrate and separating the support substrate from the first substrate. | 05-07-2015 |
20150125973 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display and a method for manufacturing the same are described. An exemplary embodiment provides an OLED display including: a substrate including a plurality of pixel areas; a light emitting unit including an organic light emitting diode and a plurality of first thin film transistors, the light emitting unit being formed in each of the plurality of pixel areas; and a sensor unit including a photosensor and a plurality of second thin film transistors, the sensor unit being formed in at least some of the plurality of pixel areas. Each of the plurality of first thin film transistors and the plurality of second thin film transistors includes an oxide semiconductor layer, and the photosensor includes an oxide photoelectric conversion layer that are made of a same material on a same layer as the oxide semiconductor layer. | 05-07-2015 |
20150132871 | OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING OXIDE SEMICONDUCTOR DEVICES, DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES - An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure. | 05-14-2015 |
20150140699 | METHODS OF FORMING OXIDE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES - A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap. | 05-21-2015 |
20150147831 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE - Provided is a method of manufacturing an organic light emitting display device. The method includes: providing a first substrate including: a display portion, and a non-display portion, forming a thin film transistor (TFT) and an organic light emitting diode (OLED) in the display portion of the first substrate, providing a pad portion including: at least one pad contact portion at the non-display portion and electrically connected to the TFT, and a pad insulating portion between adjacent pad contact portions, providing an anti-moisture insulation layer entirely covering the first substrate, adhering an encapsulating substrate onto the anti-moisture insulation portion in correspondence with the display portion, and removing the anti-moisture insulation layer, at the pad contact portion, using a laser. | 05-28-2015 |
20150340417 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer. | 11-26-2015 |
20150380676 | ORGANIC LIGHT EMITTING DIODE DISPLAY HAVING AUXILIARY ELECTRODE - In an aspect, an organic light emitting diode display including: a substrate; a first electrode and an auxiliary electrode positioned on the substrate and separated from each other; an absorption electrode positioned on the auxiliary electrode; an organic emission layer positioned on the first electrode and having a contact hole exposing the auxiliary electrode and the absorption electrode; and a second electrode positioned on the organic emission layer and connected to the auxiliary electrode and the absorption electrode through the contact hole is provided. In an aspect, the organic light emitting diode (OLED) display may minimize the voltage drop of the driving power passing through the large-sized electrode of the thin film for driving the organic emission layer, and may simplify the removal process of the organic emission layer on the auxiliary electrode by adding the absorption electrode on the auxiliary electrode. | 12-31-2015 |
20160013257 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING DISPLAY SUBSTRATE HAVING THE SAME | 01-14-2016 |
20160013446 | Display Devices Using Feedback Enhanced Light Emitting Diode | 01-14-2016 |
20160028012 | MANUFACTURING METHOD OF FLEXIBLE DISPLAY DEVICE AND SUBSTRATE STRUCTURE - The present invention relates to display technology and provides a manufacturing method of flexible display devices and a substrate structure, used for uniformly stripping a flexible substrate of the flexible display device from a bearing substrate. The method includes: forming an adhesive layer on the bearing substrate; forming the flexible substrate on the adhesive layer, and fixing the flexible substrate to the bearing substrate through the adhesive layer; forming display elements on a surface of the flexible substrate opposite to the other surface which adhered to the adhesive layer; arranging a heater on a surface of the bearing substrate opposite to the other surface on which formed the adhesive layer; strip the flexible substrate from the bearing substrate by heating the adhesive layer via the heater, thus obtain the flexible display device, wherein the viscidity of the adhesive in the adhesive layer is degraded after being heated. | 01-28-2016 |
20160054610 | ALIGNMENT METHOD OF ALIGNMENT FILM - The present invention provides an alignment method of an alignment film, comprising steps of: | 02-25-2016 |
20160072102 | FLEXIBLE ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF FABRICATING THE SAME - A flexible organic electroluminescent device is disclosed which includes: a flexible substrate; a buffer layer entirely formed on the flexible substrate; a thin film transistor formed on the buffer layer and configured to include an active layer; a planarization film formed to cover the thin film transistor; an organic light emitting diode formed on the planarization film and configured to include a first electrode, an organic emission layer and a second electrode; and at least one silicon nitride layer formed above the active layer of the thin film transistor but under the planarization film and patterned into a plurality of island patterns. | 03-10-2016 |
20160104725 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, DELAMINATION METHOD, AND TRANSFERRING METHOD - A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed. | 04-14-2016 |
20160111605 | METHOD FOR TRANSFERRING LIGHT-EMITTING ELEMENTS ONTO A PACKAGE SUBSTRATE - A method for transferring light-emitting elements onto a package substrate includes: providing a light-emitting unit including a supporting substrate and a plurality of light-emitting elements, each of the light-emitting elements being removably connected to the supporting substrate and having a surface opposite to the supporting substrate; disposing the light-emitting unit spacingly above a package substrate in such a manner that the surface of each of the light-emitting elements faces the package substrate; and disconnecting the light-emitting elements from the supporting substrate to allow the light-emitting elements to fall onto the package substrate by gravity, so as to connect the light-emitting elements with the package substrate in a non-contact transferring method. | 04-21-2016 |
20160116799 | METHOD OF FABRICATING POLARIZING MEMBER, AND METHOD OF FABRICATING LIQUID CRYSTAL DISPLAY INCLUDING POLARIZING MEMBER - A method of fabricating a polarizing member includes: sequentially disposing a metal layer and a preliminary pattern layer on a base substrate including a display area and a non-display area; forming a patterned resin layer on the preliminary pattern layer in the display area, the patterned resin layer including patterns formed on a surface of the patterned resin layer; surface-treating the preliminary pattern layer and the patterned resin layer; forming a mask pattern including a photoresist material on the preliminary pattern layer disposed in the non-display area; forming preliminary patterns on the preliminary pattern layer using the patterned resin layer; and forming a wire grid polarizing unit in the display area by etching the metal layer using the preliminary pattern and the mask pattern as a polarizing pattern. | 04-28-2016 |
20160126457 | LASER CRYSTALLIZATION SYSTEM, LASER CRYSTALLIZATION METHOD, AND METHOD OF FABRICATING DISPLAY DEVICE - A laser crystallization system, including an output unit configured to generate output laser light, an optical unit configured to split the output laser light into a first laser light and a second laser light, and to process the first laser light to have a crystallization energy density, a moving unit configured to move a target object to be irradiated with the first laser light and the second laser light, a detection unit configured to detect surface information of the target object utilizing the second laser light, and an input unit configured to receive the detected surface information and to transmit a control signal to the output unit and the moving unit, wherein the laser crystallization system is configured to detect the surface information of the target object and to crystallize the target object utilizing only the output laser light. | 05-05-2016 |
20160126506 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A method of manufacturing an organic light-emitting display apparatus includes forming a pixel electrode, a bus electrode and a pixel defining layer on a same layer on a substrate, the pixel defining layer exposing a center of the pixel electrode and a portion of the bus electrode, forming an intermediate layer on the pixel-defining layer and on the pixel electrode and the bus electrode, orienting the substrate such that the intermediate layer is located underneath the substrate, forming an opening in the intermediate layer by irradiating the intermediate layer with a laser beam from underneath the intermediate layer to remove the intermediate layer on the bus electrode, exposing at least a portion of the bus electrode, and forming an opposite electrode such that the opposite electrode contacts the bus electrode via the opening in the intermediate layer. | 05-05-2016 |
20160133657 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - An exemplary embodiment provides a thin film transistor array panel including: a substrate; a gate line; a semiconductor layer; a data wire layer; a first passivation layer; and a second passivation layer. The gate line is disposed on the substrate and includes a gate electrode. The semiconductor layer is disposed on the substrate. The data wire layer is configured to include a data line disposed on the substrate to cross the gate line, a source electrode connected to the data line, and a drain electrode disposed to face the source electrode. The first passivation layer is disposed on a channel region between the source electrode and the drain electrode. The second passivation layer is disposed on the first passivation layer, the source electrode, and the drain electrode. A width of the first passivation layer disposed on the channel region is equal to or smaller than a distance between the source electrode and the drain electrode. | 05-12-2016 |
20160141313 | METHOD FOR MANUFACTURING FLEXIBLE DISPLAY DEVICE - Disclosed is a method for manufacturing a flexible display device. The method includes: providing a substrate, the substrate having a first surface and the second surface opposite to each other; forming a first flexible substrate on the first surface of the substrate and forming the second flexible substrate on the second surface of the substrate in such a way that a force acting from the first flexible substrate to the substrate is equal to, but in opposite direction, a force acting from the second substrate to the substrate; forming a displaying component on a surface of the first flexible substrate that is distant from the substrate; and peeling the first flexible substrate on which the displaying component is formed off the substrate so as to form a flexible display device. The flexible display device manufactured with the method has an enhanced quality. | 05-19-2016 |
20160141559 | Organic Light Emitting Diode Display Device and Method of Fabricating the Same - An organic light emitting diode display device comprises: first and second substrates facing and spaced apart from each other; a gate line and a data line on the first substrate, the gate line and the data line crossing each other to define a plurality of pixel regions; at least one thin film transistor coupled to the gate line and the data line; a light emitting diode coupled to the at least one thin film transistor, the light emitting diode including a first electrode, an emitting layer and a second electrode; and a passivation layer on the light emitting diode, the passivation layer having a smaller area than the second electrode. | 05-19-2016 |
20160164032 | METHOD FOR FABRICATING INTERMEDIATE MEMBER OF ELECTRONIC ELEMENT AND METHOD FOR FABRICATING ELECTRONIC ELEMENT - A method for fabricating an intermediate member of an electronic element, comprises: preparing a glass substrate as a support substrate having a first surface; forming a first inorganic film that contains silicon and has a second surface and a third surface opposite to the second surface, in such a manner that the first surface of the support substrate is in contact with the second surface of the first inorganic film; forming a first polyimide film containing fluorine on the third surface of the first inorganic film; and forming a second inorganic film containing silicon on the first polyimide film. | 06-09-2016 |
20160164050 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes: an emission unit including an organic light emitting diode, a pixel circuit unit including: a circuit configured to drive the emission unit, and a line configured to apply a signal to the circuit, and a light blocking layer covering the pixel circuit unit, and configured to block light input to the pixel circuit unit, and a repair part disposed in the light blocking layer, the repair part being configured for repairing the line when a defect occurs in a pixel that includes the pixel circuit unit. | 06-09-2016 |
20160190170 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE - The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed. | 06-30-2016 |
20160190523 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DIODE DISPLAY - A method of manufacturing an OLED display is disclosed. In one aspect, the method includes providing a donor substrate including a material formed on one surface thereof and heating the material so as to form a barrier thin-film on the donor substrate. The method also includes providing an acceptor substrate and a substrate attached to the acceptor substrate, forming an OLED unit over the substrate, bonding the OLED unit and the barrier thin-film together, and irradiating a laser beam on the barrier thin-film so as to delaminate the donor substrate from the barrier thin-film. | 06-30-2016 |
20160197313 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS | 07-07-2016 |
20160204180 | Organic Light Emitting Diode Display Device and Method of Fabricating the Same | 07-14-2016 |
20160254335 | ORGANIC LIGHT EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME | 09-01-2016 |
20160254455 | ORGANIC LIGHT-EMITTING DIODE (OLED) DEVICE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE | 09-01-2016 |
20160254473 | METHOD FOR MANUFACTURING OLED DEVICE AND OLED DEVICE MANUFACTURED THEREWITH | 09-01-2016 |
20190148348 | ELASTOMERIC LAYER FABRICATION FOR LIGHT EMITTING DIODES | 05-16-2019 |