| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 420008000 |
FERROUS (I.E., IRON BASE)
| 710 |
| 420528000 |
ALUMINUM BASE
| 238 |
| 420469000 |
COPPER BASE
| 203 |
| 420441000 |
NICKEL BASE
| 173 |
| 420402000 |
MAGNESIUM BASE
| 102 |
| 420417000 |
TITANIUM BASE
| 84 |
| 420501000 |
SILVER BASE
| 64 |
| 420580000 |
CONTAINING OVER 50 PER CENT METAL BUT NO BASE METAL
| 61 |
| 420591000 |
MISCELLANEOUS
| 37 |
| 420557000 |
TIN BASE
| 29 |
| 420507000 |
GOLD BASE
| 26 |
| 420435000 |
COBALT BASE
| 23 |
| 420513000 |
ZINC BASE
| 13 |
| 420463000 |
PALLADIUM BASE
| 12 |
| 420416000 |
RARE EARTH METAL BASE SINGLY OR IN COMBINATION
| 10 |
| 420430000 |
TUNGSTEN BASE
| 10 |
| 420429000 |
MOLYBDENUM BASE
| 10 |
| 420422000 |
ZIRCONIUM OR HAFNIUM BASE
| 10 |
| 420466000 |
PLATINUM BASE
| 8 |
| 420577000 |
BISMUTH BASE
| 8 |
| 420427000 |
TANTALUM BASE
| 7 |
| 420555000 |
GALLIUM, INDIUM, OR THALLIUM BASE
| 7 |
| 420462000 |
RUTHENIUM OR RHODIUM BASE
| 7 |
| 420425000 |
NIOBIUM BASE
| 6 |
| 420001000 |
RADIOACTIVE
| 6 |
| 420461000 |
OSMIUM OR IRIDIUM BASE
| 6 |
| 420578000 |
SILICON BASE ALLOY CONTAINING METAL | 4 |
| 20090185947 | SILICON ALLOY, ALLOY POWDER THEREOF, MANUFACTURING APPARATUS, MANUFACTURING PROCESS AND SINTERED ALLOY THEREOF - A controlled combustion synthesis apparatus comprises an ignition system, a pressure sensor for detecting internal pressure, a nitrogen supply, a gas pressure control valve for feeding nitrogen and exhausting reaction gas, means for detecting the internal temperature of the reaction container, a water cooled jacket, and a cooling plate. A temperature control system controls the temperature of the reaction container by controlling the flow of cooling water supplied to the jacket and the cooling plate in response to the detected temperature. By combustion synthesizing, while controlling the internal pressure and temperature, the apparatus can synthesize a silicon alloy including 30-70 wt. % silicon, 10-45 wt. % nitrogen, 1-40 wt. % aluminum, and 1-40 wt % oxygen. | 07-23-2009 |
| 20100178195 | METHOD OF SOLIDIFYING METALLIC SILICON - A method of solidifying metallic silicon, characterized by monodirectionally solidifying a metallic silicon of 800 ppm or less iron concentration. Any metal impurity components of the metallic silicon can be effectively removed with reduced cost through shortened steps. | 07-15-2010 |
| 20110044845 | 'KAZAKHSTANSKIY' ALLOY FOR STEEL DEOXIDATION AND ALLOYING - The invention relates to ferrous metallurgy, in particular to producing an alloy for reducing, doping and modifying steel. The invention makes it possible to improve the quality of the steel treated with the inventive alloy owing to the deep reduction and modification of non-metallic impurities and the simultaneous microalloying of steel with barium, titanium and vanadium. Barium, titanium and vanadium are added into the inventive alloy, which contains aluminium, silicium, calcium, carbon and iron, with the following component ratio, in mass %: 45.0-63.0 silicium, 10.0-25.0 aluminium, 1.0-10.0 calcium, 1.0-10.0 barium, 0.3-0.5 vanadium, 1.0-10.0 titanium, 0.1-1.0 carbon, the rest being iron. | 02-24-2011 |
| 20150050183 | CONTAINMENT OF MOLTEN MATERIALS HAVING SILICON - Silicon eutectic alloy compositions and methods for making the same are disclosed. In one approach, a method may include using a glass carbon container to restrict contamination of the eutectic alloy melt. In an alternative approach, a method may include using a container having aluminum. The aluminum in the container may provide aluminum that is incorporated into the silicon eutectic alloy. Silicon eutectic bodies made by such methods are also disclosed. | 02-19-2015 |
| 420434000 |
MANGANESE BASE | 4 |
| 20140356222 | High Purity Manganese and Method for Producing Same - High purity manganese having a purity of 3N (99.9%) or more, wherein number of non-metal inclusions with a size of 0.5 μm or more is 50000 or less per 1 g of the high purity manganese. A method for producing high purity manganese, wherein refining is performed using a raw material (secondary raw material) obtained by acid-washing a manganese raw material (primary raw material) so that the produced high purity manganese has a purity of 3N (99.9%) or more, and number of non-metal inclusions with a size of 0.5 μm or more is 50000 or less per 1 g of the high purity manganese. The present invention provides a method for producing high purity metal manganese from commercially available manganese, and aims to obtain high purity metal manganese having a low LPC. | 12-04-2014 |
| 20150118100 | Film Deposition Using Precursors Containing Amidoimine Ligands - Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent. | 04-30-2015 |
| 20150125341 | Non-Rare Earth Magnets Having Manganese (MN) and Bismuth (BI) Alloyed with Cobalt (CO) - Permanent and soft magnets that do not depend on rare-earth elements have suitable magnetic properties for electric motor and generator applications. Both saturation magnetization and magneto-crystalline anisotropy of a manganese-bismuth (Mn—Bi) permanent (hard) magnet are increased by alloying the Mn—Bi magnet with cobalt (Co) or cobalt-iron (Co—Fe). Such magnets do not include rare-earth and precious metals (e.g., platinum), which are expensive and often limited in supply, but offer high magneto-crystalline anisotropy and magnetization. Therefore, a relatively high maximum energy product (BH) | 05-07-2015 |
| 20160032427 | METHOD FOR MANUFACTURING HIGH PURITY MANGANESE AND HIGH PURITY MANGANESE - The present invention relates to a method for manufacturing a high purity Mn, the method comprising: placing a Mn raw material in a magnesia crucible to perform melting with the use of a vacuum induction melting furnace (VIM furnace) at a melting temperature of 1240 to 1400° C. under an inert atmosphere of 500 Torr or less; then adding calcium in a range between 0.5 and 2.0% of the weight of Mn to perform deoxidation and desulfurization; casting the resultant in an iron mold after the completion of the deoxidation and desulfurization to manufacture an ingot; then placing the Mn ingot in a skull melting furnace; reducing pressure to 10 | 02-04-2016 |
| 420590000 |
PROCESSES | 3 |
| 20080199350 | Metastable beta-titanium alloy - Metastable β-titanium alloy contains, in mass %: from 1.5 to 3.5 aluminum; from 4.5 to 8.0 molybdenum; from 1.0 to 3.5 vanadium; from 1.5 to 3.8 iron; titanium balance. This alloy combines high strength and ductility. This allows to use it for production of a wide range of critical parts including fastener components and different coil springs (e.g. in automobile industry). | 08-21-2008 |
| 20100068091 | MULTI-COMPONENT COMPOSITION METAL INJECTION MOLDING - A metal alloy feedstock and method for metal injection molding is disclosed. The alloy includes at least two components, such as a first component and a second component. The first component has a first melting point and the second component has a second melting point higher than the first melting point. The first melting point and the second melting point match to the temperature gradient of the heated barrel of an injection molding machine whereby when fed into the injection molding machine the first component melts prior to the second component melts and enables the second component to solute into the first component. Additional components may also be used. | 03-18-2010 |
| 20100098581 | REVERT BLEND ALGORITHM - A revert alloy is used in the manufacture of a target alloy having a different composition. The weight percent of the elemental constituents of this first alloy and a second or target alloy are obtained, and the ratio of the percentage by weight of each elemental constituent in the first alloy to the second alloy is determined. The lowest ratio is used to determine the amount of the first alloy that is melted and the necessary elemental constituents that are added to the melt to produce the desired composition of the target alloy. The melt is solidified to produce the target alloy. | 04-22-2010 |
| 420579000 |
ARSENIC BASE OR SELENIUM OR TELLURIUM BASE ALLOY CONTAINING METAL | 3 |
| 20110318221 | METHOD OF CUTTING SINGLE CRYSTALS - An embodiment of the invention provides a single crystal cleaved from a larger crystal and having a cleavage surface that extends along a natural crystallographic plane of the single crystal, the cleavage surface produced by generating a stress field to propagate a crack in the larger crystal along the natural plane, so that during cracking by the stress field a magnitude of a derivative of an energy release rate, G(α), generated by the stress field at a front of the crack as a function of angular deviation, α, from the natural plane, is less than or equal to twice an effective step energy, β | 12-29-2011 |
| 20120282133 | CRYSTAL GROWTH APPARATUS AND METHOD - Systems and methods are disclosed for crystal growth using VGF and VB growth processes to reduce body lineage. In one exemplary embodiment, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical gradient freeze process wherein the crystallizing temperature gradient is moved relative to the crystal and/or furnace to melt the raw material and reform it as a monocrystalline compound, and growing the crystal using a vertical Bridgman process on the wherein the ampoule/heating source are moved relative each other to continue to melt the raw material and reform it as a monocrystalline compound. | 11-08-2012 |
| 20120288403 | GaAs SINGLE CRYSTAL WAFER AND METHOD OF MANUFACTURING THE SAME - The present invention provides a GaAs single crystal wafer and a method of manufacturing the same, wherein the wafer is characterized in that, when the strain in the radial direction in the GaAs single crystal wafer is expressed as Sr and the strain in the tangential direction on the circumference of the same is expressed as St, the residual stress in a wafer plane of the semi-insulating GaAs wafer denoted by |Sr−St| is smaller than 1.0×10 | 11-15-2012 |
| 420576000 |
ANTIMONY BASE | 3 |
| 20100111754 | Potassium and Sodium Filled Skutterudites - Interstitial voids of the cubic CoSb | 05-06-2010 |
| 20130156636 | SEMI-HEUSLER/HEUSLER ALLOYS HAVING TAILORED PHASE SEPARATION - An inorganic, intermetallic compound contains at least two elements per formula unit and consists of at least two phases, at least one phase being semiconducting or semimetallic, these at least two phases are immiscible with each other and are thermodynamically stable, so as to allow the thermal conductivity of semi-Heusler alloys to be reduced while at the same time maintaining the electrical conductivity and the thermoelectric voltage. | 06-20-2013 |
| 20140186209 | THERMOELECTRIC SKUTTERUDITE COMPOSITIONS AND METHODS FOR PRODUCING THE SAME - Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials. | 07-03-2014 |
| 420556000 |
GERMANIUM BASE | 3 |
| 20090297395 | Methods of treating semiconducting materials and treated semiconducting materials - A method for treating semiconducting materials is disclosed. In the disclosed method, a semiconducting material having a crystalline structure is provided, at least a portion of the semiconducting material is exposed to a heat source to create a melt pool, and the semiconducting material is then cooled. Semiconducting materials treated by the method are also disclosed. | 12-03-2009 |
| 20110176958 | SINTERED COMPACT, PROCESS FOR PRODUCTION THEREOF, AND OPTICAL ELEMENT - There is provided a sintered body that does not readily deform during use and that allows a high flexibility for the design of surface layers, a method for manufacturing the sintered body, and an optical component including the sintered body. The method for manufacturing a sintered body includes a sintered body having a predetermined shape, the sintered body having a ceramic base material, the method for manufacturing a sintered body comprising a step for preparing a ceramic preform, a step for using a predetermined mold having an upper die and a lower die to hot-press the ceramic preform to form a pressure-sintered body, and a step for cooling the pressure-sintered body while applying a pressure load of approximately 5% or more and 100% or less (and preferably approximately 20% or more and 40% or less) of the pressure load applied during the step for forming the pressure-sintered body. | 07-21-2011 |
| 20140099232 | SHEET OF SEMICONDUCTING MATERIAL, SYSTEM FOR FORMING SAME, AND METHOD OF FORMING SAME - A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material. | 04-10-2014 |
| 420428000 |
CHROMIUM BASE | 3 |
| 20090068055 | Processing of powders of a refractory metal based alloy for high densification - A powder metallurgy method of making a chromium base alloy includes blending a first powder comprising a chromium powder and a second powder comprising at least one of titanium, titanium hydride, zirconium or zirconium hydride, annealing the first powder and the second powder in a reducing atmosphere after the step of mixing, compacting a blend of the first and the second powders, and sintering the compacted blend to form a chromium base alloy. The chromium alloy may be used as an interconnect for a solid oxide fuel cell, and includes least one of iron or nickel greater than zero and equal to or less than 7 weight percent, yttria greater than zero and equal to or less than 2 weight percent, at least one of titanium or zirconium greater than zero and equal to or less than 1 weight percent and at least 90 weight percent chromium. | 03-12-2009 |
| 20100278686 | PROCESS FOR RECOVERING METALS AND METAL COMPOUNDS FROM MINED ORE AND OTHER METAL-BEARING RAW SOURCE MATERIALS - A method for selectively recovering a metal from mined ore and other metal-bearing raw source materials is disclosed. The method involves mixing with an aqueous medium a metal-bearing ore and/or other raw source material containing a first metal in an insoluble form, insoluble and/or soluble Cr in a Cr bearing material as a second metal, and organic and inorganic compounds to obtain a slurry containing the first metal in an insoluble form, insoluble and/or soluble Cr compound(s), and the organic and inorganic compounds; adjusting the pH of the slurry to an optimal range for Cr oxidation to convert Cr to an insoluble form; optionally adding a first oxidizer to the slurry to oxidize organic and inorganic compounds; selectively leaching the Cr by adding a leaching agent in an amount sufficient to obtain Cr in a soluble form while the first metal remains in the slurry in an insoluble form; filtering the slurry to obtain a filter cake containing the first metal in an insoluble form and a filtrate containing Cr in a soluble form; and recovering the filter cake containing the first metal in an insoluble form and/or filtrate containing Cr in a soluble form. | 11-04-2010 |
| 20160122848 | PROCESSES FOR PRODUCING LOW NITROGEN METALLIC CHROMIUM AND CHROMIUM-CONTAINING ALLOYS AND THE RESULTING PRODUCTS - Processes for producing low-nitrogen metallic chromium or chromium-containing alloys, which prevent the nitrogen in the surrounding atmosphere from being carried into the melt and being absorbed by the metallic chromium or chromium-containing alloy during the metallothermic reaction, include vacuum-degassing a thermite mixture comprising metal compounds and metallic reducing powders contained within a vacuum vessel, igniting the thermite mixture to effect reduction of the metal compounds within the vessel under reduced pressure i.e., below 1 bar, and conducting the entire reduction reaction in said vessel under reduced pressure, including solidification and cooling, to produce a final product with a nitrogen content below 10 ppm. The final products obtained, in addition to low-nitrogen metallic chromium in combination with other elements, can be used as raw materials in the manufacture of superalloys, stainless steel and other specialty steels whose final content of nitrogen is below 10 ppm. | 05-05-2016 |
| 420400000 |
ALKALI METAL BASE | 3 |
| 20090041614 | Silica gel compositions containing alkali metals and alkali metal alloys - The invention relates to Group 1 metal/silica gel compositions comprising silica gel and an alkali metal or an alkali metal alloy. The compositions of the inventions are described as Stage 0, I, II, and III materials. These materials differ in their preparation and chemical reactivity. Each successive stage may be prepared directly using the methods described below or from an earlier stage material. Stage 0 materials may, for example, be prepared using liquid alloys of Na and K which are rapidly absorbed by silica gel (porous SiO | 02-12-2009 |
| 20100111750 | METHODS FOR INTRODUCTION OF A REACTIVE MATERIAL INTO A VACUUM CHAMBER - Methods for the introduction of a reactive material into a vacuum chamber while minimizing or eliminating the simultaneous introduction of contaminating materials or substances. As a result, contaminating materials and substances that can interfere with any measurements or other processes that occur in the vacuum chamber are minimized or eliminated. | 05-06-2010 |
| 20140147330 | METHOD FOR PREPARING METALLIC LITHIUM USING ELECTROLYSIS IN NON-AQUEOUS ELECTROLYTE - The present invention provides a method for preparing metallic lithium by electrolysis using a non-aqueous electrolyte at low temperature. The method for preparing metallic lithium according to the present invention can directly prepare metallic lithium by electrolysis at a low temperature, and enable mass production, and reduce the manufacturing cost due to its simple process and easy control of electrolytic conditions, and thus the method for preparing lithium thin films according to the present invention can be applied in the industry. | 05-29-2014 |
| 420401000 |
BERYLLIUM BASE | 2 |
| 20130216424 | REDUCED BERYLLIUM CASTING ALLOY - The beryllium content of beryllium aluminum alloys suitable for investment casting which contain a small but suitable amount of silver can be significantly reduced without adversely affecting their thermal or investment casting properties by including significantly more silicon in the alloy than done in the past. | 08-22-2013 |
| 20140286820 | HIGH STRENGTH REDUCED BE CASTING ALLOY - The Be content of Be Al alloys suitable for investment casting, which contain a small but suitable amount of Ag, can be significantly reduced without adversely affecting their thermal or investment casting properties by including significantly more Si in the alloy than done in the past. | 09-25-2014 |
| 420433000 |
RHENIUM BASE | 2 |
| 20110229366 | METHOD FOR RECOVERING RHENIUM AND OTHER METALS FROM RHENIUM-BEARING MATERIALS - The present invention relates to a method of recovering rhenium (Re) and other metals from Re-bearing materials. | 09-22-2011 |
| 20120244032 | METHOD AND APPARATUS FOR LASER ABLATION - In order to produce a coating on a substrate, the substrate is placed adjacent to a target. Material is cold ablated off the target by focusing a number of consecutive laser pulses on the target, thus producing a number of consecutive plasma fronts that move at least partly to the direction of said substrate. The time difference between said consecutive laser pulses is so short that constituents resulting from a number of consecutive plasma fronts form a nucleus on a surface of the substrate where a mean energy of said constituents allows the spontaneous formation of a crystalline structure. | 09-27-2012 |
| 420563000 |
LEAD BASE | 1 |
| 20100303668 | FUSIBLE ALLOY FOR PRESSURE RELIEF DEVICES - The present invention relates to a fusible alloy for pressure relief devices (PRDs), and the present invention provides a fusible alloy for PRD, the alloy comprising 29.0 to 33.0% by weight of Bi, 14.0 to 21.0% by weight of Sn, 2.0 to 5.0% by weight of In, and substantially Pb for the balance. | 12-02-2010 |
| 420424000 |
VANADIUM BASE | 1 |
| 20140099229 | NEGATIVE ELECTRODE ACTIVE MATERIAL FOR ELECTRIC DEVICE - A negative electrode active material for an electric device includes an alloy containing Si in a range of greater than or equal to 27% by mass and less than 100% by mass, Sn in a range of greater than 0% by mass and less than or equal to 73% by mass, V in a range of greater than 0% by mass and less than or equal to 73% by mass, and inevitable impurities as a residue. The negative electrode active material can be obtained with, for example, a multi DC magnetron sputtering apparatus by use of Si, Sn, and V as targets. An electric device using the negative electrode active material can achieve long cycle life and ensure a high capacity and cycle durability. | 04-10-2014 |
| 420415000 |
ALKALINE EARTH METAL BASE | 1 |
| 20140301890 | Method for Producing High-Purity Calcium - The present invention provides a method for producing high-purity calcium, the method being characterized by the following: performing first sublimation purification by introducing calcium starting material having a purity, excluding the gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750° C. to 800° C., and causing the product to deposit (evaporate) onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750° C. to 800° C., and causing the product to similarly deposit (evaporate) on the inside walls of the sublimation vessel thereby recovering calcium having a purity of 4N5 or higher It is an object of the present invention to provide a technology with which calcium that has been brought to a high-purity can be obtained with stability to be used for the production of high-purity lanthanum, as well as to be used as a reducing agent for other rare earth elements, a desulfurizing or deoxidizing agent for metals, or a getter for high-vacuum pumps. | 10-09-2014 |
