| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 420462000 | RUTHENIUM OR RHODIUM BASE | 7 |
| 20090028745 | RUTHENIUM PRECURSOR WITH TWO DIFFERING LIGANDS FOR USE IN SEMICONDUCTOR APPLICATIONS - Methods of forming a ruthenium containing film on a substrate with a ruthenium precursor which contains nitrogen and two differing ligands. | 01-29-2009 |
| 20090087339 | METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR - A method for depositing a thin ruthenium (Ru) film on a substrate in a reaction chamber, comprising: step (i) of supplying at least one type of gas of a ruthenium precursor being a β-diketone-coordinated ruthenium complex and causing the gas to be adsorbed to the substrate in the reaction chamber; step (ii) of supplying a reducing gas into the reaction chamber and exciting the reducing gas, or supplying an excited reducing gas into the reaction chamber, in order to activate the ruthenium precursor adsorbed to the substrate; and step (iii) of repeating steps (i) and (ii) to form a thin ruthenium film on the substrate. | 04-02-2009 |
| 20090220374 | METHOD AND APPARATUS FOR USING SOLUTION PRECURSORS FOR ATOMIC LAYER DEPOSITION - A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth. | 09-03-2009 |
| 20090280025 | High-Purity Ru Alloy Target, Process for Producing the Same, and Sputtered Film - An object of the present invention is to provide a high-purity Ru alloy target for sputtering and its manufacturing method, which are capable of reducing harmful substances as much as possible, refining the crystal grains as much as possible so as to make the film thickness distribution during deposition to be uniform, and preventing deterioration in adhesiveness with an Si substrate, and which are suitable in forming a capacitor electrode material of a semiconductor memory, as well as a high-purity Ru alloy sputtered film obtained by sputtering this Ru alloy target. | 11-12-2009 |
| 20120294753 | METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION - A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth. | 11-22-2012 |
| 20140377126 | RUTHENIUM NANOPARTICLES WITH ESSENTIALLY FACE-CENTERED CUBIC STRUCTURE AND METHOD FOR PRODUCING THE SAME - Disclosed are ruthenium nanoparticles having an essentially face-centered cubic structure. Disclosed is a method for producing ruthenium nanoparticles having an essentially face-centered cubic structure. This production method includes a step (i) of maintaining a solution containing ruthenium (III) acetylacetonate, polyvinylpyrrolidone, and triethylene glycol at a temperature of 180° C. or higher. | 12-25-2014 |
| 20160039008 | Synthesis of Bimetallic Nanoparticle Catalysts Using Microwave Irradiation - The present invention provides compositions and methods of making bimetallic metal alloys of composition for example, Rh/Pd; Rh/Pt; Rh/Ag; Rh/Au; Rh/Ru; Rh/Co; Rh/Ir; Rh/Ni; Ir/Pd; Ir/Pt; Ir/Ag; Ir/Au; Pd/Ni; Pd/Pt; Pd/Ag; Pd/Au; Pt/Ni; Pt/Ag; Pt/Au; Ni/Ag; Ni/Au; or Ag/Au prepared using microwave irradiation. | 02-11-2016 |
