| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 420416000 | RARE EARTH METAL BASE SINGLY OR IN COMBINATION | 10 |
| 20090246071 | HYDROGEN STORAGE ALLOY - Hydrogen storage alloy has a composition expressed by a general formula (La | 10-01-2009 |
| 20090257907 | SmCo-BASED ALLOY NANOPARTICLES AND PROCESS FOR THEIR PRODUCTION - SmCo-based alloy nanoparticles composed mainly of a SmCo-based alloy containing Sm and Co as constituent elements, wherein the content of metal elements other than Sm and Co is 0.05-20 wt % with respect to the SmCo-based alloy. | 10-15-2009 |
| 20100260640 | High Purity Ytterbium, Sputtering Target Made Thereof, Thin Film Containing the Same, and Method of Producing the Same - Provided is a method of producing high purity ytterbium, wherein the high purity ytterbium is obtained by reducing crude ytterbium oxide in a vacuum with reducing metals composed of metals having a low vapor pressure, and selectively distilling ytterbium. Additionally provided are methods of achieving the high purification of ytterbium which has a high vapor pressure and is hard to refine in a molten state, and high purity ytterbium obtained thereby. Further provided is technology for efficiently and stably obtaining a sputtering target made of high purity material ytterbium, and a thin film for metal gates containing high purity material ytterbium. | 10-14-2010 |
| 20100272596 | High-Purity Lanthanum, Sputtering Target Comprising High-Purity Lanthanum, and Metal Gate Film Mainly Comprising High-Purity Lanthanum - Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum. | 10-28-2010 |
| 20110300017 | Method for Manufacturing High-Purity Erbium, High-Purity Erbium, Sputtering Target Composed of High-Purity Erbium, and Metal Gate Film having High-Purity Erbium as Main Component - Provided are a method for manufacturing high-purity erbium, wherein crude erbium oxide is mixed with reducing metal, erbium is reduced and distilled by heating the mixture in a vacuum, and the distillate is melted in an inert atmosphere to obtain high-purity erbium; and high-purity erbium, wherein the purity excluding rare-earth elements and gas components is 4 N or higher and the oxygen content is 200 wtppm or less. An object of this invention is to provide a method of highly purifying erbium, which has a high vapor pressure and is difficult to be refined in a molten metal state, as well as technology for efficiently and stably providing high-purity erbium obtained with the foregoing method, a sputtering target composed of high-purity erbium, and a metal gate film having high-purity erbium as a main component. | 12-08-2011 |
| 20120148436 | NANOWIRE PREPARATION METHODS, COMPOSITIONS, AND ARTICLES - Nanomaterial preparation methods, compositions, and articles are disclosed and claimed. Such methods can provide nanomaterials with improved morphologies relative to previous methods. Such materials are useful in electronic applications. | 06-14-2012 |
| 20120282132 | METAL AND METAL OXIDE STRUCTURES AND PREPARATION THEREOF - Methods of the invention allow rapid production of high-porous, large-surface-area nanostructured metal and/or metal oxide at attractive low cost applicable to a wide variety of commercial applications such as sensors, catalysts and photovoltaics. | 11-08-2012 |
| 20120315182 | Preparation of R5X4 materials by carbothermic processing - A method for preparing R | 12-13-2012 |
| 20140140884 | HIGH-PURITY YTTRIUM, PROCESS OF PRODUCING HIGH-PURITY YTTRIUM, HIGH-PURITY YTTRIUM SPUTTERING TARGET, METAL GATE FILM DEPOSITED WITH HIGH-PURITY YTTRIUM SPUTTERING TARGET, AND SEMICONDUCTOR ELEMENT AND DEVICE EQUIPPED WITH THE METAL GATE FILM - Provided are high-purity yttrium and a high-purity yttrium sputtering target each having a purity, excluding rare earth elements and gas components, of 5 N or more and containing 1 wt ppm or less of each of Al, Fe, and Cu; a method of producing high-purity yttrium by molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500° C. to 800° C. to obtain yttrium crystals, desalting treatment, water washing, and drying of the yttrium crystals, and then electron beam melting for removing volatile materials to achieve a purity, excluding rare earth elements and gas components, of 5N or more; and a technology capable of efficiently and stably providing high-purity yttrium, a sputtering target composed of the high-purity yttrium, and a metal-gate thin film mainly composed of the high-purity yttrium. | 05-22-2014 |
| 20140199203 | HIGH-PURITY LANTHANUM, METHOD FOR PRODUCING SAME, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT - A high-purity lanthanum, characterized by having a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm | 07-17-2014 |
