Class / Patent application number | Description | Number of patent applications / Date published |
372460013 | Having oxidized region | 12 |
20080267239 | High-Index-Contrast Waveguide - Disclosed is an example method to reduce waveguide scattering loss. The method includes forming a waveguide having a sidewall, the waveguide including a group III-V compound semiconductor material, and growing a native oxide on the waveguide to form an index of refraction contrast at the sidewall, the native oxide grown in a controlled Oxygen-enriched water vapor environment to reduce a roughness of the sidewall. | 10-30-2008 |
20090034572 | SURFACE-EMITTING LASER - Provided is a high-output surface-emitting laser capable of reducing effects on reflectance of an upper reflection mirror in a single transverse mode. The surface-emitting laser includes plural semiconductor layers, laminated on a substrate, which includes a lower semiconductor multilayer reflection mirror, an active layer, and an upper semiconductor multilayer reflection mirror, wherein the lower or upper semiconductor multilayer reflection mirror includes a first semiconductor layer having a two-dimensional photonic crystal structure comprised of a high and low refractive index portions which are arranged in a direction parallel to the substrate, and wherein a second semiconductor layer laminated on the first semiconductor layer includes a microhole which reaches the low refractive index portion, the cross section of the microhole in the direction parallel to the substrate being smaller than the cross section of the low refractive index portion formed in the first semiconductor layer. | 02-05-2009 |
20090262773 | Optoelectronic Semiconductor Component With Current Spreading Layer - An optoelectronic semiconductor component comprising a semiconductor body ( | 10-22-2009 |
20100080258 | SURFACE EMITTING LASER AND MANUFACTURING METHOD THEREFOR - Provided is a surface emitting laser or the like capable of suppressing horizontal misalignment between the surface relief structure and the current confining structure to make higher the precision of the alignment, to thereby obtain single transverse mode characteristics with stability. The surface emitting laser having a semiconductor layer laminated therein includes: a first etching region formed by etching a part of the upper mirror; and a second etching region formed by performing etching from a bottom portion of the first etching region to a semiconductor layer for forming a current confining structure, in which a depth of the second etching region is smaller than a depth of the first etching region. | 04-01-2010 |
20100158065 | SURFACE-EMISSION LASER DEVICES, SURFACE-EMISSION LASER ARRAY HAVING THE SAME, ELECTROPHOTOGRAPHIC SYSTEM AND OPTICAL COMMUNICATION SYSTEM - A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light. | 06-24-2010 |
20110007769 | LASER DIODE - A laser diode includes: a first multilayer film reflecting mirror, an active layer, and a second multilayer film reflecting mirror in this order; and a first oxide narrowing layer and a second oxide narrowing layer. The first oxide narrowing layer is formed close to the active layer, in comparison with the second oxide narrowing layer, includes a first unoxidized region in a middle region in a plane, and includes a first oxidized region on a periphery of the first unoxidized region. The second oxide narrowing layer includes, in a region facing the first unoxidized region, a second unoxidized region having a diameter smaller than that of the first unoxidized region, includes a third unoxidized region in a region not facing the first unoxidized region, and includes a second oxidized region on a periphery of the second unoxidized region and the third unoxidized region. | 01-13-2011 |
20110064109 | Laser diode - A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more. | 03-17-2011 |
20110090929 | SURFACE EMITTING LASER AND MANUFACTURING METHOD THEREFOR - Provided is a surface emitting laser or the like capable of suppressing horizontal misalignment between the surface relief structure and the current confining structure to make higher the precision of the alignment, to thereby obtain single transverse mode characteristics with stability. The surface emitting laser having a semiconductor layer laminated therein includes: a first etching region formed by etching a part of the upper mirror; and a second etching region formed by performing etching from a bottom portion of the first etching region to a semiconductor layer for forming a current confining structure, in which a depth of the second etching region is smaller than a depth of the first etching region. | 04-21-2011 |
20110222569 | SEMICONDUCTOR LASER, SEMICONDUCTOR LASER DEVICE, AND FABRICATION METHOD OF SEMICONDUCTOR LASER - A semiconductor laser that includes: a substrate; a first semiconductor multilayer reflector of a first conductive type formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductive type formed on the active region; and an intermediate semiconductor layer of a first conductive type or a second conductive type formed under the first semiconductor multilayer reflector or above the second semiconductor multilayer reflector. An oxidized region formed by oxidizing a part of the intermediate semiconductor layer and an un-oxidized region contacting with the oxidized region are formed in the intermediate semiconductor layer, the un-oxidized region is electrically connected to the first or second semiconductor multilayer reflector, and a beam generated in the active region is reflected at a boundary between the oxidized region and the un-oxidized region to a direction parallel to a principal surface of the substrate, and is emitted from a side surface of the intermediate semiconductor layer. | 09-15-2011 |
20120134382 | SURFACE EMITTING SEMICONDUCTOR LASER COMPONENT HAVING A VERTICAL EMISSION DIRECTION - A surface emitting semiconductor laser component having a vertical emission direction includes a semiconductor body having a first resonator mirror, a second resonator mirror, and an active zone that generates radiation, wherein the first resonator mirror has alternately stacked first layers having a first composition and second layers having a second composition, the first layers have oxidized regions, at least the first layers each contain a dopant, and at least one layer of the first layers has a dopant concentration different from the dopant concentration of the other first layers. | 05-31-2012 |
20130077647 | SURFACE-EMISSION LASER DEVICES, SURFACE-EMISSION LASER ARRAY HAVING THE SAME, ELECTROPHOTOGRAPHIC SYSTEM AND OPTICAL COMMUNICATION SYSTEM - A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light. | 03-28-2013 |
20150010032 | LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure. | 01-08-2015 |