| Entries |
| Document | Title | Date |
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| 20080205467 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes: a substrate of a first conductivity type; a laminated body of a nitride semiconductor provided on the substrate and including at least an active layer and a cladding layer, the cladding layer being of a second conductivity type and having a ridge-shaped waveguide; a first film provided on one end surface of an optical resonator composed of the laminated body, the first film having a reflectance of 40% or more and 60% or less; and a second film provided on the other end surface of the optical resonator and having a higher reflectance than the first film. The optical resonator has a length of 400 μm or less. The one end surface serves as a light emitting surface. | 08-28-2008 |
| 20080219312 | QUANTUM CASCADE LASER DEVICE - In a quantum cascade laser device | 09-11-2008 |
| 20080232417 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer. | 09-25-2008 |
| 20080247434 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device capable of increasing the carrier concentration of a p-type cladding layer and improving light-emitting efficiency is provided. A semiconductor light-emitting device is made of a Group II-VI compound semiconductor, and the semiconductor light-emitting device includes an active layer between an n-type cladding layer and a p-type cladding layer, in which the active layer has a Type II superlattice structure, and the junctions between the active layer and the n-type cladding layer and between the active layer and the p-type cladding layer each have a Type I structure, and the p-type cladding layer includes tellurium (Te) as a Group VI element. | 10-09-2008 |
| 20080247435 | SEMICONDUCTOR LASER DIODE HAVING GRADED INTERLAYER - A semiconductor laser diode having a graded interlayer is provided. The semiconductor laser diode has the graded interlayer between an active layer composed of InGaN and an electron blocking layer (EBL) composed of AlGaN. The graded interlayer is composed of In | 10-09-2008 |
| 20090010293 | Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device - A nitride semiconductor light emitting device includes an n-type GaN substrate ( | 01-08-2009 |
| 20090022197 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the other semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element. | 01-22-2009 |
| 20090041076 | Opto-semiconductor devices - An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than 50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer. | 02-12-2009 |
| 20090059986 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a second conductivity type provided on the active layer, an upper portion of the second clad layer implements a ridge extending in a predetermined direction; a pair of first current block layers provided on the second clad layer sandwiching the ridge along the extending direction; and a pair of second current block layers provided between the first current block layers on the second clad layer and at sidewalls of the ridge to be contacted with the first current block layers, sandwiching selectively a region including an edge of the ridge, the second current block layers having a refractive index larger than the first current block layers at an emission peak wavelength of the active layer. | 03-05-2009 |
| 20090080484 | SEMICONDUCTOR LASER APPARATUS - A semiconductor laser apparatus can improve electric conversion efficiency to a satisfactory extent. The apparatus includes an n-type cladding layer, an n-type cladding layer side guide layer, an active layer, a p-type cladding layer side guide layer, and a p-type cladding layer, wherein electrons and holes are injected into the active layer, transverse to the active layer, through the n-type cladding layer side guide layer and the p-type cladding layer side guide layer. The p-type cladding layer side guide layer is thinner than the n-type cladding layer side guide layer to position the active layer closer to the p-type cladding layer, and, at the same time, the refractive index of the p-type cladding layer side guide layer is higher than the refractive index of the n-type cladding layer side guide layer. | 03-26-2009 |
| 20090086780 | Semiconductor Laser Device and Method for Fabricating the Same - In a monolithic dual wavelength laser device in which an infrared laser part | 04-02-2009 |
| 20090086781 | Monolithic semiconductor laser - An infrared element ( | 04-02-2009 |
| 20090092165 | LASER DIODE HAVING NANO PATTERNS AND METHOD OF FABRICATING THE SAME - A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type clad layer. Column-shaped nano patterns are arranged at a surface of the second conductive-type clad layer to form a laser diode such as a distributed feedback laser diode. | 04-09-2009 |
| 20090097521 | Side Surface Light Emitting Semiconductor Element And Method Of Manufacturing The Same - A side surface light emitting semiconductor element includes: an AlGaN layer doped with Mg at a concentration equal to or less than 5×10 | 04-16-2009 |
| 20090110018 | Laser diode expitaxial wafer and method for producing same - A laser diode epitaxial wafer has an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the active layer, and the p-type cladding layer are formed of an AlGaInP-based material. The p-type cladding layer has carbon as a p-type impurity. The p-type cladding layer has a carrier concentration in the range of not less than 8.0×10 | 04-30-2009 |
| 20090116526 | Semiconductor light-emitting device with a surface emitting type - A structure of an optical device with the surface emitting type and a method to form the optical device are disclosed, where the optical device is able to operate in high frequencies. The device provides a lower DBR structure, an active layer, a current injection layer, a current blocking layer, and an upper DBR structure on a GaAs substrate. The current blocking layer, horizontally putting the current injection layer therebetween, are an un-doped GaInP grown at a temperature between 500 to 600° C. and an un-doped AlGaInP grown at a temperature between 500 to 650° C. Because the un-doped current blocking layer shows the high resistivity for both electrons and holes, the parasitic capacitance in the current blocking layer becomes small. | 05-07-2009 |
| 20090116527 | Surface emitting laser diode including grating layer - A surface emitting laser diode includes a ring-shaped first semiconductor layer including an n-type clad layer, a ring-shaped active layer provided on the first semiconductor layer, and a ring-shaped second semiconductor layer which is provided on the active layer and includes a p-type clad layer and a grating layer including grating units continuously arranged in a circumferential direction, each grating unit including a plurality of regions having different refractive indices and being adjacent to each other in the circumferential direction. | 05-07-2009 |
| 20090190622 | SEMICONDUCTOR LASER - A semiconductor laser comprises: a semiconductor substrate and a lower cladding layer, an active layer, and an upper cladding layer on the semiconductor substrate. The layers form a resonator having opposed end surfaces. A ridge includes part of the upper cladding layer. The upper cladding layer in the ridge, proximate the resonator end surfaces, is thicker than the upper cladding layer in the ridge at a central part of the resonator. | 07-30-2009 |
| 20090201962 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device | 08-13-2009 |
| 20090201963 | VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, FREE SPACE OPTICAL COMMUNICATION DEVICE, OPTICAL TRANSMISSION SYSTEM, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM - Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type formed thereon; and a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon. The reflective mirrors include a pair of a high refractive index layer and a low refractive index layer. The impurity concentration of the second reflective mirror is higher than that of the third reflective mirror. The band gap energy of the high refractive index layer in the second reflective mirror is greater than the energy of the wavelength of a resonator formed of the first reflective mirror, the active region, the current confining layer, the second reflective mirror, and the third reflective mirror. | 08-13-2009 |
| 20090238228 | Quantum dot based semiconductor waveguide devices - Methods and devices for providing a multiwavelength laser which may be used for multicasting and other optical communications uses. The present invention provides a quantum dot based multiwavelength laser with a monolithic gain block. The Fabry-Perot gain block has both upper and lower InP cladding layers. The laser system has a middle quantum dot layer with multiple stacked layers of InAs quantum dots embedded in InGaAsP. When provided with a CW injection current, the laser system produces an output spectra with equally spaced multiple emission peaks. With an input optical data signal applied to the laser system, the laser system duplicates the data in the input signal across multiple different wavelengths. | 09-24-2009 |
| 20090245312 | SURFACE EMITTING LASER ELEMENT ARRAY - Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate. | 10-01-2009 |
| 20090262772 | SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer. | 10-22-2009 |
| 20090323750 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS OPTICAL PICKUP - A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer. | 12-31-2009 |
| 20100008393 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND EPITAXIAL WAFER - The group II nitride semiconductor light-emitting device includes: a gallium nitride based semiconductor region of n-type; a p-type gallium nitride based semiconductor region; a hole-blocking layer; and an active layer. The gallium nitride based semiconductor region of n-type has a primary surface, and the primary surface extends on a predetermined plane. The c-axis of the gallium nitride based semiconductor region tilts from a normal line of the predetermined plane. The hole-blocking layer comprises a first gallium nitride based semiconductor. The band gap of the hole-blocking layer is greater than the band gap of the gallium nitride based semiconductor region, and the thickness of the hole-blocking layer is less than the thickness of the gallium nitride based semiconductor region. The active layer comprises a gallium nitride semiconductor. The active layer is provided between the p-type gallium nitride based semiconductor region and the hole-blocking layer. The hole-blocking layer and the active layer is provided between the primary surface of the gallium nitride based semiconductor region and the p-type gallium nitride based semiconductor region. The band gap of the hole-blocking layer is greater than a maximum band gap of the active layer. | 01-14-2010 |
| 20100061416 | GALLERY-MODE MICRODISC SYSTEM FOR ELECTRICALLY PUMPED OPTICAL SOURCES - The invention concerns a gallery mode microdisc system for an electrically pumped optical source, the microdisc ( | 03-11-2010 |
| 20100067558 | SEMICONDUCTOR LASER - A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×10 | 03-18-2010 |
| 20100085996 | NITRIDE SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD - A method for manufacturing a nitride semiconductor laser device with suppression of deterioration of the yield and good light emission characteristic. The method comprises a step of forming nitride semiconductor layers on an n-type GaN substrate, a step of forming a ridge composed of a p-type clad layer and a contact layer and extending in the [1-100] direction, a step of forming a trench made in the top surface of the n-type GaN substrate by applying a YAG laser beam and extending in the direction ([11-20] direction) perpendicular to the ridge, and a step of forming end surfaces of a resonator by dividing the n-type GaN substrate from the trench. The step of forming a trench includes a substep of forming the end of the trench in a region a predetermined distance W | 04-08-2010 |
| 20100085997 | NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on an active layer made of a nitride-based semiconductor, and an electrode layer including a first metal layer, made of Pt, formed on a far side of a surface of the nitride-based semiconductor layer from the active layer, a second metal layer, made of Pd, formed on a surface of the first metal layer, and a third metal layer, made of Pt, formed on a surface of the second metal layer, and having a shape necessary for the device in plan view. A thickness of the third metal layer is at least 10 times and not more than 30 times a thickness of the first metal layer. | 04-08-2010 |
| 20100111128 | SELECTIVE AREA METAL BONDING Si-BASED LASER - A method for fabricating a selective area metal bonding Si-based laser, optically or electrically pumped includes: forming a Si waveguide area and a bonding area in a Silicon-On-Insulator (SOI) wafer, and forming an isolating structure to separate the Si waveguide area from the bonding area; forming a metal multilayer for bonding, which also acts as ohmic contact layer in the laser when the laser is electrically pumped. A compound semiconductor optical gain structure is prepared by epitaxial growth and etched off the substrate. The compound semiconductor optical gain structure is aligned with the Si waveguide area in the SOI wafer and the compound semiconductor optical gain structure is bonded on the SOI wafer. The selective area metal bonding Si-based laser can be used as a light source in optoelectronic integration and Si photonics. The method may provide simple operation, flexibility, low cost, and low requirement for cleanness of manufacturing environments. | 05-06-2010 |
| 20100124245 | SEMICONDUCTOR LASER AND MANUFACTURING PROCESS THEREOF - A semiconductor laser has a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, an active layer disposed above the lower cladding layer, a first upper cladding layer disposed above the active layer, a second upper cladding layer disposed above the first upper cladding layer and having a mesa structure, a high-order mode filter layer formed on both side faces of the second upper cladding layer, continuously extending from the both side faces onto at least a part of a side region on both sides of the second upper cladding layer and having a band gap not exceeding a band gap of the active layer, and a block layer formed on the high-order mode filter layer and on a side region on both sides of the second upper cladding layer and including a layer having a band gap greater than a band gap of the active layer. | 05-20-2010 |
| 20100150199 | Nitride semiconductor light-emitting device - A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield. | 06-17-2010 |
| 20100189152 | HIGH POWER SEMICONDUCTOR LASER DIODE - Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection. | 07-29-2010 |
| 20100195689 | SURFACE EMITTING LASER ELEMENT ARRAY - A surface emitting laser element array comprises a plurality of surface emitting laser elements ( | 08-05-2010 |
| 20100202485 | SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor laser including: a substrate (semiconductor substrate); an optical waveguide (active layer waveguide) with a mesa structure that includes an active layer (strain-compensated multiple quantum well active layer) including Al, is provided over the semiconductor substrate; a semiconductor protective layer that is provided so as to cover the top and the side of a mesa of the active layer waveguide; a current block layer that is provided so as to embed the active layer waveguide and the semiconductor protective layer; and a clad layer (p-type InP clad layer) that is provided over the semiconductor protective layer and the current block layer, wherein, the semiconductor protective layer has a semiconductor layer (p-type InGaAsP protective layer) that includes As, but does not include Al. | 08-12-2010 |
| 20100208763 | Semiconductor Chip and Method for Manufacturing a Semiconductor Chip - A semiconductor chip with a semiconductor body has a semiconductor layer sequence with an active region provided for generating radiation. A mirror structure that includes a mirror layer and a dielectric layer that is arranged at least in regions between the mirror layer and semiconductor body is arranged on the semiconductor body. | 08-19-2010 |
| 20100220762 | HIGH POWER SEMICONDUCTOR OPTO-ELECTRONIC DEVICE - Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer ( | 09-02-2010 |
| 20100232468 | SEMICONDUCTOR LASER DEVICE - High performance and high reliability of a semiconductor laser device having a buried-hetero structure are achieved. The semiconductor laser device having a buried-hetero structure is manufactured by burying both sides of a mesa structure by a Ru-doped InGaP wide-gap layer and subsequently by a Ru-doped InGaP graded layer whose composition is graded from InGaP to InP, and then, by a Ru-doped InP layer. By providing the Ru-doped InGaP graded layer between the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer, the Ru-doped InGaP wide-gap layer and the Ru-doped InP layer not lattice-matching with each other can be formed as a buried layer with excellent crystallinity. | 09-16-2010 |
| 20100254421 | MULTI-BEAM SEMICONDUCTOR LASER DEVICE - Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate | 10-07-2010 |
| 20100265980 | SEMICONDUCTOR LASER - A semiconductor laser includes an active region including an active layer, and a diffraction grating and a phase shift which determine an oscillation wavelength, and a distributed reflector region including a light guide layer and a refection diffraction grating. The distributed reflector region has an effective diffraction grating period which varies along a direction of a cavity. | 10-21-2010 |
| 20100284434 | EDGE EMITTING SEMICONDUCTOR LASER CHIP HAVING AT LEAST ONE CURRENT BARRIER - An edge emitting semiconductor laser chip includes at least one contact strip, wherein the contact strip has a width B, an active zone, in which electromagnetic radiation is generated during the operation of the semiconductor laser chip, and at least two current barriers, arranged on different sides of the contact strip and extending along the contact strip, wherein the largest distance V between at least one of the current barriers and the contact strip is chosen in such a way that the ratio of the largest distance V to the width B is V/B>1. | 11-11-2010 |
| 20100290493 | LASER DIODE AND METHOD OF MANUFACTURING THE SAME - A laser diode includes an active layer, a strip-shaped ridge provided above the active layer, a pair of resonator end faces sandwiching the active layer and the ridge from an extending direction of the ridge, and an upland section provided being contacted with both side faces of the ridge in at least one of the resonator end faces of the pair of resonator end face and in the vicinity thereof. A thickness from the active layer to a surface of the upland section is larger on the resonator end face side and is smaller on a central side of the ridge, and the thickness is continuously changed from a thick portion on the resonator end face side to a thin portion on the central side of the ridge. | 11-18-2010 |
| 20100290494 | QUANTUM CASCADE LASER SUITABLE FOR PORTABLE APPLICATIONS - A highly portable, high-powered infrared laser source is produced by intermittent operation of a quantum cascade laser power regulated to a predetermined operating range that permits passive cooling. The regulation process may boost battery voltage allowing the use of a more compact, low-voltage batteries. | 11-18-2010 |
| 20100296541 | SEMICONDUCTOR LASER DIODE - A semiconductor laser diode includes a semiconductor multilayer structure including a first cladding layer of n-type conductivity, an active layer, and a second cladding layer of p-type conductivity having a ridge portion in an upper portion, which are sequentially formed on a substrate; a current blocking layer formed on the semiconductor multilayer structure, and having an opening exposing an upper surface of the ridge portion; an ohmic electrode formed on the upper surface of the ridge portion; an interconnect formed on the semiconductor multilayer structure to be electrically connected to the ohmic electrode; and a pad electrode formed in a region on one side of the ridge portion on the interconnect. The interconnect connects the pad electrode to the ohmic electrode through at least two current channels. | 11-25-2010 |
| 20100316080 | SEMICONDUCTOR OPTICAL ELEMENT - A semiconductor optical element includes a p-type InP substrate doped with Zn; and a diffusion blocking layer doped with Ru, a p-type InP cladding layer, an active layer, and an n-type InP cladding layer sequentially arranged on the p-type InP substrate. | 12-16-2010 |
| 20110002352 | OPTICAL WAVEGUIDE INTEGRATED SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR - An optical waveguide integrated semiconductor optical device includes a laser and an optical waveguide. The laser includes an active layer and a first cladding layer which are stacked on a second cladding layer. The optical waveguide includes an optical guiding layer and an undoped InP layer which are also stacked on the second cladding layer. A high resistance layer is located between the top surface of the optical guiding layer and a surface of the undoped InP layer and between a side of the first cladding layer and a side of the undoped InP layer. | 01-06-2011 |
| 20110002353 | SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND IMAGE FORMATION APPARATUS - To provide a surface emitting laser having a structure that can suppress the oscillation of a high-order transverse mode. In the surface emitting laser, a plurality of semiconductor layers including a lower DBR, an upper DBR, an active layer interposed therebetween, and a current confinement layer for confining a current injected to the active layer are stacked on a substrate, and a barrier structure limits the migration of a majority carrier, that has passed through a current unconfining portion, in an electric field application direction; the barrier structure is provided between the current confinement layer and the active layer so that an oscillation of a high-order transverse mode is suppressed by the barrier structure promoting the diffusion of the majority carrier in an in-plane direction of the barrier structure. | 01-06-2011 |
| 20110019709 | Semiconductor device and method of manufacturing the same - The present invention provides a method of manufacturing a semiconductor device realizing improved yield. The semiconductor device includes: a substrate having a top face, an under face, and side faces; an optical function unit formed on the top face; a plurality of electrode pads formed on the under face; and a wiring formed on at least the side face and electrically connecting the optical function unit and at least one of the plurality of electrode pads. | 01-27-2011 |
| 20110044366 | INJECTION SEEDED LASER RATIO LOOP CONTROL - In a method of controlling an injection-seeded laser, a response of the laser is sampled at a plurality of different laser current values. A threshold current and a slope efficiency of the sampled response are then estimated, and a bias current and a modulation current calculated based on the estimated threshold current and a slope efficiency. | 02-24-2011 |
| 20110058587 | VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, OPTICAL TRANSMISSION DEVICE, AND INFORMATION PROCESSING APPARATUS - A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector that is a first conductive type and formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector that is a second conductive type and formed on the active region; a current narrowing layer that is located between the first and second semiconductor multilayer reflectors, and in that a conductive region which has anisotropy in a long side direction and a short side direction within the surface which is parallel to a principal surface of the substrate is formed; and a convex lens member that is formed in a beam window which emits a light on the second multilayer reflector, and that has anisotropy in a long side direction and a short side direction within a surface which is parallel to the principal surface of the substrate. | 03-10-2011 |
| 20110085579 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate. | 04-14-2011 |
| 20110116525 | SIDE LIGHT EMITTING TYPE SEMICONDUCTOR LASER DIODE HAVING DIELECTRIC LAYER FORMED ON ACTIVE LAYER - Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer. | 05-19-2011 |
| 20110128986 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device can suppress electrode-to-electrode resonance of laser light emitted from an active layer, increasing electrical conversion efficiency. The semiconductor laser device has a substrate and an active layer. The energy of the laser light emitted from the active layer is smaller than the band gap energy of the substrate, and the carrier concentration of the substrate is at least 2.2×10 | 06-02-2011 |
| 20110134952 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL DISC DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor laser having an end surface window structure includes the steps of forming a groove near at least the formation position of the end surface window structure of a substrate, and growing a nitride-based group III-V compound semiconductor layer including an active layer formed of a nitride-based group III-V compound semiconductor including at least In and Ga on the substrate. | 06-09-2011 |
| 20110150021 | DIODE LASER, INTEGRAL DIODE LASER, AND AN INTEGRAL SEMICONDUCTOR OPTICAL AMPLIFIER - Invention relates to three types of laser light sources: diode laser, integral diode laser (in form of integrally connected diode lasers) and integral semiconductor optical amplifier (in form of integrally connected driving laser diode and semiconductor amplifier element), which amplifier consists of original optical resonator of diode laser and original laser radiation coupling. Two reflectors in optical resonator of diode laser, which falls into three types of above-mentioned laser radiation sources, have greatest possible reflection factor on both sides thereof and radiation coupling from active layer is carried out, by-passing active layer, through broadband semiconductor layers of the modified heterostructure of diode laser with practically fully antireflective (less than 0.01%) optical face. Invention makes it possible to design superpower, high-performance, high-speed and reliable three types of sources of single-frequency, single-mode and multi-mode high quality laser radiation in broad wavelength band, to simplify the production and cut in production costs thereof. | 06-23-2011 |
| 20110158279 | SEMICONDUCTOR OPTICAL ELEMENT AND INTEGRATED SEMICONDUCTOR OPTICAL ELEMENT - A semiconductor optical element and an integrated semiconductor optical element suppressing leakage current flow through a burying layer. A mesa-stripe-shaped laminate structure includes a p-type cladding layer, an active layer, and an n-type cladding layer. A burying layer on a side of the laminated structure includes, a first p-type semiconductor layer, a first n-type semiconductor layer, an Fe-doped semiconductor layer, a second n-type semiconductor layer, a low carrier concentration semiconductor layer, and a second p-type semiconductor layer. The Fe-doped semiconductor layer is not grown on a (111)B surface of the first p-type semiconductor layer and of the first n-type semiconductor layer. The second n-type semiconductor layer is not grown on a (111)B surface of the first p-type semiconductor layer, of the first n-type semiconductor layer, and of the Fe-doped semiconductor layer. | 06-30-2011 |
| 20110176572 | VCSEL WITH NON-CIRCULAR MESA AND CURRENT CONFINEMENT APERTURE FOR HIGHER-ORDER LATERAL MODE EMISSION - A vertical cavity surface emitting laser (VCSEL) ( | 07-21-2011 |
| 20110182313 | LASER DIODE AND METHOD OF MANUFACTURING THE SAME - A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure. | 07-28-2011 |
| 20110206082 | SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER MODULE - A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion formed between the first narrow portion and the wide portion, which expands toward the wide portion, and a second tapered portion formed between the wide portion and the second narrow portion, which narrows toward the second narrow portion. Each of the first narrow portion, the wide portion, and the second narrow potion has a uniform width. | 08-25-2011 |
| 20110249696 | Laser diode - There is provided a laser diode capable of setting a mesa diameter small without use of a method which loses reliability of a device, and is not easily controlled. The laser diode includes: a columnar mesa including a first multilayer film reflecting mirror, an active layer, and a second multilayer film reflecting mirror in this order, including an oxide confined layer having an unoxidized region in middle of a plane, and having a cross-sectional shape in a plane direction different from a cross-sectional shape of the unoxidized region in a plane direction; and a plurality of metal electrodes formed in regions on a top face of the mesa not facing the unoxidized region. | 10-13-2011 |
| 20110249697 | PUSH-PULL MODULATED COUPLED VERTICAL-CAVITY SURFACE-EMITTING LASERS AND METHOD - A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has twenty of more periods of mirror pairs. | 10-13-2011 |
| 20110261855 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer. | 10-27-2011 |
| 20110317732 | Edge Emitting Semiconductor Laser - An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes. | 12-29-2011 |
| 20120099614 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor laser device of the present invention includes: a substrate; a cladding layer of a first conductivity type formed above one of surfaces of the substrate; an active layer formed above the cladding layer of the first conductivity type; a cladding layer of a second conductivity type formed above the active layer, and having a ridge and a planar portion; a dielectric film formed on a lower portion of a side surface of the ridge and on the planar portion; a first electrode formed on an other one of the surfaces of the substrate; a second electrode formed above the ridge; a third electrode formed over the second electrode and the dielectric film to cover the ridge and the planar portion; and a cavity provided between the third electrode and at least a part of the side surface of the ridge. | 04-26-2012 |
| 20120114002 | GROUP III NITRIDE SEMICONDUCTOR LASER DIODE, AND METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LASER DIODE - Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al | 05-10-2012 |
| 20120170605 | VCSEL WITH SURFACE FILTERING STRUCTURES - Semiconductor devices are described that include a vertical cavity surface emitting laser (VCSEL) and a structure formed on or near the surface of the VCSEL that acts as a filter that benefits high-frequency VCSEL modulation performance. | 07-05-2012 |
| 20120281727 | SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE IN WHICH AN EDGE-EMITTING LASER IS INTEGRATED WITH A DIFFRACTIVE LENS, AND A METHOD FOR MAKING THE DEVICE - A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser integrated in a semiconductor material with various reflectors and a diffractive lens. The edge-emitting laser has a first section comprising an active MQW region, a second section comprising a passive region and a third section comprising a semi-insulating or un-doped semiconductor bulk layer. This configuration ensures that the injection current will pass through all of the layers of the active region, thereby preventing the occurrence of optical losses due to un-injected areas of the MQW active region. In addition, the inclusion of the passive region ensures that there is no current passing through the interface between the active MQW region and the regrown semiconductor bulk layer. The latter feature improves performance and device reliability. | 11-08-2012 |
| 20120307857 | SUPERLUMINESCENT DIODE, METHOD OF MANUFACTURING THE SAME, AND WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER INCLUDING THE SAME - Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide. | 12-06-2012 |
| 20130070800 | SEMICONDUCTOR LASER DIODES - A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode. | 03-21-2013 |
| 20130128910 | LASER LIFT-OFF APPARATUS - In order to separate a material layer from a substrate at the boundary face between the substrate and the material layer, a laser light is applied to a workpiece from the substrate side through a mask, the work having the material layer formed on the substrate. The laser beam is split into a plurality of small area laser light by the mask | 05-23-2013 |
| 20130163631 | CONFORMAL METALLIZATION PROCESS FOR THE FABRICATION OF SEMICONDUCTOR LASER DEVICES - A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material. | 06-27-2013 |
| 20130243025 | SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE, AND SEMICONDUCTOR LASER ARRAY - A semiconductor laser device includes a substrate, ridge stripes on the substrate and separated by separation sections, a top surface electrode continuously extending over the ridge stripes, and a bottom surface electrode on a bottom surface of the substrate. Each of the ridge stripes includes a lower cladding layer on the substrate, an active layer on the lower cladding layer, an upper cladding layer on the active layer, and a contact layer on the upper cladding layer. | 09-19-2013 |
| 20130250993 | VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE - Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of Al | 09-26-2013 |
| 20130259081 | OPTICAL SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE, OPTICAL TRANSMITTING DEVICE, AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: a substrate of semiconductor; an array having a plurality of active regions arranged on the substrate so as to emit light to the same direction, the plurality of active regions being arranged more densely at ends of the array than in the center of the array in a direction crossing the light emitting direction; and electrodes which inject current to the plurality of active regions. | 10-03-2013 |
| 20130308671 | DIODE HAVING VERTICAL STRUCTURE - A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode. | 11-21-2013 |
| 20130336350 | SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME - A semiconductor laser includes: a p-type semiconductor substrate; a ridge having an active layer and cladding layers on the semiconductor substrate; a current blocking layer embedding side surfaces of the ridge; and an n-type contact layer on the ridge and the current blocking layer. The current blocking layer includes a first p-type layer, an n-type layer or a hole-trapping insulating semiconductor layer, a second p-type layer, a diffusion inhibiting layer, and a third p-type layer stacked, in order, from the semiconductor substrate. The n-type contact layer includes a p-type inverted region located in a portion of the n-type contact layer, in contact with the third p-type layer. Dopants in the third p-type layer diffuse into the p-type inverted region. The diffusion inhibiting layer is an undoped semiconductor material or a semi-insulating semiconductor material and inhibits dopants in the third p-type layer from being diffused into the active layer. | 12-19-2013 |
| 20140016660 | Metallic Contact for Optoelectronic Semiconductor Device - A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact. | 01-16-2014 |
| 20140050243 | CMOS-COMPATIBLE GOLD-FREE CONTACTS - A semiconductor metallurgy includes a ratio of germanium and palladium that provides low contact resistance to both n-type material and p-type material. The metallurgy allows for a contact that does not include gold and is compatible with mass-production CMOS techniques. The ratio of germanium and palladium can be achieved by stacking layers of the materials and annealing the stack, or simultaneously depositing the germanium and palladium on the material where the contact is to be manufactured. | 02-20-2014 |
| 20140050244 | SUPERLUMINESCENT DIODE - A superluminescent diode has, above a substrate, a layered portion including at least a first cladding layer, a luminescent layer, and a second cladding layer in this order, and an optical waveguide having a refractive-index guiding structure is provided in the layered portion. The optical waveguide includes: a first mesa portion formed by processing the second cladding layer into the first mesa portion having a first width; and a second mesa portion formed by processing the first cladding layer, the luminescent layer, and the second cladding layer into the second mesa portion having a second width greater than the first width. | 02-20-2014 |
| 20140092930 | CONFORMAL METALLIZATION PROCESS FOR THE FABRICATION OF SEMICONDUCTOR LASER DEVICES - A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material. | 04-03-2014 |
| 20140269803 | HYBRID VERTICAL CAVITY LASER AND METHOD OF MANUFACTURING THE SAME - A hybrid vertical cavity laser includes an optical circuit substrate including a grating having refractive index units having a lower refractive index and a higher refractive index with respect to each other that are alternately arranged in a first direction, and a waveguide guiding light in the first direction, a mesa structure on the optical circuit substrate, the mesa structure including a first-type semiconductor layer including an exposed portion, an active layer, a second-type semiconductor layer, and an upper reflective layer sequentially stacked in a second direction perpendicular to the first direction, a first electrode on the exposed portion, and a second electrode on the upper reflective layer. An overlapped length between the waveguide and a mesa aperture forming an opening through which light produced from the active layer enters the grating is D, a pitch of the grating is p, and 0| 09-18-2014 | |
| 20140301421 | Flared Laser Oscillator Waveguide - A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations. | 10-09-2014 |
| 20150295386 | DIODE LASER PACKAGES WITH FLARED LASER OSCILLATOR WAVEGUIDES - A high brightness diode laser package includes a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions, a plurality of optical components situated to receive the laser beams from the plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship, and an optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package. | 10-15-2015 |
| 20160006216 | FLARED LASER OSCILLATOR WAVEGUIDE - A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations. | 01-07-2016 |
| 20160020581 | SEMICONDUCTOR LASER ELEMENT - A semiconductor laser element is realized with high beam quality (index M | 01-21-2016 |
| 20160104997 | MULTIPLE FLARED LASER OSCILLATOR WAVEGUIDE - A broad area semiconductor diode laser device includes a multiple flared oscillator waveguide including a plurality of component flared oscillator waveguides, each component flared oscillator waveguide including a multimode high reflector facet, a partial reflector facet spaced apart from the high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1, and wherein the component flared oscillator waveguides of the multiple flared oscillator waveguide are arranged in a row such that portions of the flared current injection regions of adjacently situated component flared oscillator waveguides overlap each other or are in proximity to each other on the order of the wavelength of light emitted by the component flared oscillator waveguides. | 04-14-2016 |
| 20160104998 | LIGHT GUIDING FOR VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER - The present invention relates to an active gain layer stack ( | 04-14-2016 |
| 20160172823 | DIODE LASER PACKAGES WITH FLARED LASER OSCILLATOR WAVEGUIDES | 06-16-2016 |
| 20170236974 | LIGHT EMITTING DEVICE WITH TRANSPARENT CONDUCTIVE GROUP-III NITRIDE LAYER | 08-17-2017 |
| 20190148587 | LIGHT EMITTING DEVICE WITH TRANSPARENT CONDUCTIVE GROUP-III NITRIDE LAYER | 05-16-2019 |
