| Entries |
| Document | Title | Date |
|---|
| 20080205463 | METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE - A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser. | 08-28-2008 |
| 20080212630 | Laser apparatus - A laser apparatus includes an excitation light generator for emitting excitation light and a wavelength converter including a solid laser medium for emitting laser light by converting a wavelength of the excitation light. The excitation light generator includes a surface-emitting laser having a first reflector with top and bottom reflectors and an active layer disposed between the top and bottom reflectors. The excitation light generator further includes a second reflector configured to highly reflect the excitation light. The solid laser medium is disposed between the surface-emitting laser device and the second reflector. Reflectivities of the top and bottom reflectors of the first reflector are set so that FWHM of the solid laser medium at the wavelength of the excitation light is greater than a resonance wavelength range of the surface-emitting laser device. | 09-04-2008 |
| 20080219307 | Single-Mode Photonic-Crystal Vcsels - This specification discloses a VCSEL (Vertical-Cavity Surface-Emitting Laser) device with single-mode output and optionally single polarization output. This device is given by lateral mode confinement by the PBG (Photonic Band-Gap) effect by shallow etching in a partial VCSEL top mirror. The PBG area encircles a MS-region (Mode-Shaping region), which is characterized by large longitudinal mode losses. The MS-region encircles the LA-region (Light Aperture region), which is characterised by low longitudinal mode losses. The MS-region does not contribute to the lateral mode-confinement to the LA-aperture, and the lateral modes confined by the PBG area. The VCSEL is thus optimized for single fundamental mode operation. | 09-11-2008 |
| 20080219308 | Quantum cascade laser - A quantum cascade laser is composed of a semiconductor substrate, and an active layer provided on the semiconductor substrate and having a cascade structure formed by multistage-laminating unit laminate structures | 09-11-2008 |
| 20080219309 | METHOD OF FABRICATING SEMICONDUCTOR LASER DIODE APPARATUS AND SEMICONDUCTOR LASER DIODE APPARATUS - A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction. | 09-11-2008 |
| 20080225918 | INDEX GUIDED SEMICONDUCTOR LASER WITH LOSS-COUPLED GRATINGS AND CONTINUOUS WAVEGUIDE - A system and a method of manufacture for a semiconductor laser with a continuous waveguide ridge extending the length of the laser. The continuous waveguide ridge is positioned through the center of the optical components of the semiconductor laser. The optical components including the waveguide ridge may be distributed Bragg reflectors (DBRs), outcoupling gratings, and phase controllers. The illustrated embodiments include lateral-grating grating-stabilized edge-emitting lasers and lateral-grating grating-stabilized surface-emitting (GSE) lasers. Both loss-coupled and non-loss-coupled lateral-grating components are illustrated. | 09-18-2008 |
| 20080225919 | Power Semiconductor Laser with Low Divergence and Low Astigmatism, and Method for the Production Thereof - The present invention relates to a high-power semiconductor laser having low divergence and low astigmatism, this laser being including, in an active layer, a first part in the form of a narrow monomode stripe with transverse index guiding terminating in a second part flaring out from the first part, also with transverse index guiding. | 09-18-2008 |
| 20080225920 | SEMICONDUCTOR LASER DIODE APPARATUS AND METHOD OF FABRICATING THE SAME - A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base. | 09-18-2008 |
| 20080232413 | Multiple Phonon Resonance Quantum Cascade Lasers - Quantum-cascade lasers are provided with an active section in which relaxation of carriers from a lower laser level is provided by three or more phonon-assisted transitions to levels within the active section whose energies are below the energy of the lower laser level. The gain region of the laser consists of alternating active and injector sections, with an injection barrier inserted between each injector section and the adjacent active section, and an exit barrier inserted between each active section and the adjacent injector section. The active section comprises a sufficient number of quantum wells separated by quantum barriers to produce the desired energy-level structure consisting of an upper laser level, a lower laser level, and at least three levels that have lower energies than the lower laser level, with the separation of adjacent energy levels below and including the lower laser level that are at least equal to the energy of the quantum well material's longitudinal optical phonon. | 09-25-2008 |
| 20080232414 | LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT ASSEMBLY, AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT ASSEMBLY - A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer. | 09-25-2008 |
| 20080240190 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER - A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate. | 10-02-2008 |
| 20080240191 | SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURING METHOD THEREOF - In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5×10 | 10-02-2008 |
| 20080240192 | SURFACE EMITTING LASER ELEMENT AND METHOD OF FABRICATING THE SAME - A surface emitting laser element includes an active layer and a dielectric multilayer mirror formed with a plurality of dielectric layers having different refractive indices for reflecting a light generated in the active layer. At least one of boundaries between the dielectric layers is formed to have a predetermined surface roughness to obtain a desired target reflectance of the dielectric multilayer mirror. | 10-02-2008 |
| 20080259980 | Semiconductor Light Emitting Device Including Oxide Layer - A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is grown over an oxide layer disposed between first and second III-nitride layers. The oxide layer may at least partially relieve the strain in the light emitting layer by increasing the in-plane lattice constant of the template on which the light emitting layer is grown. The oxide layer may be formed by growing an AlInN layer in the device, etching a trench to expose the AlInN layer, then oxidizing the AlInN layer. | 10-23-2008 |
| 20080259981 | Photonic device including semiconductor structure having doped region with array of subwavelength recesses - Various aspects of the present invention are directed to photonic devices, such as electro-optic modulators, passive filters, and tunable filters. In one aspect of the present invention, a photonic device includes a semiconductor structure having a p-region and an n-region. A doped region is formed on or within the semiconductor structure. The doped region includes at least one generally periodic array of recesses, with the at least one generally periodic array configured to transmit electromagnetic radiation at a selected dominant wavelength. The selected dominant wavelength is tunable by varying the refractive index of the semiconductor structure. | 10-23-2008 |
| 20080259982 | SEMICONDUCTOR LASER DIODE FORMED WITH WINDOW AT CLEAVAGE FACET AND FABRICATING METHOD THEREOF - The semiconductor laser diode formed with a window at a cleavage facet and a fabricating method thereof are disclosed, wherein a ridge adjacent to a cleavage facet of the semiconductor laser diode and part of the p-clad layer underneath the ridge are etched to form a window, such that a current is not applied to along the cleavage facet to thereby prevent the cleavage facet from being degraded and to enhance reliability of the diode. | 10-23-2008 |
| 20080267236 | Laser diode with a grating layer - A laser diode is provided comprising a multiple quantum well structure, a current concentrating layer having an oxide-confined aperture, a grating layer having an index of refraction, and a transparent electrode, wherein the transparent electrode has an index of refraction less than the index of refraction of the grating layer. | 10-30-2008 |
| 20080273562 | Nitride Semiconductor Device and Method for Fabricating the Same - A nitride semiconductor device | 11-06-2008 |
| 20080298408 | SUBSTRATE FOR OPTICAL SEMICONDUCTOR - A substrate for optical semiconductors of the present invention comprises an insulating ceramic substrate, a metal layer provided on the insulating ceramic substrate, a solder layer provided on the metal layer and composed of Sn only or 50 wt % or more of Sn and the balance substantially of Au, and a protective layer provided on the solder layer and composed of Au or Ag having a thickness of 0.01 μm or more and 1 μm or less. The substrate for optical semiconductors as described above makes it possible to reduce stress placed on the optical semiconductor, to suppress development of crystal defects, and to prolong its life when joining the optical semiconductor easily developing crystal defects by slight stress or when in use thereafter. | 12-04-2008 |
| 20080310470 | Broadband semiconductor laser - A broadband laser having a first cladding layer, a second cladding layer. A semiconductor structure between the first and second cladding layers has a layer of inhomogeneous quantum nano heterostructures. The inhomogeneous quantum nano heterostructures are engineered to lase at a ground state and at an excited state. | 12-18-2008 |
| 20080310471 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a first semiconductor laser element formed on a surface of a first conductive type substrate, obtained by stacking a first conductive type first semiconductor layer, a first active layer and a second conductive type second semiconductor layer successively from the first conductive type substrate and a second semiconductor laser element obtained by successively stacking a first conductive type third semiconductor layer, a second active layer and a second conductive type fourth semiconductor layer, wherein the third semiconductor layer is electrically connected to the first semiconductor layer by bonding a side of the third semiconductor layer to the surface of the first conductive type substrate through a fusible layer. | 12-18-2008 |
| 20080317080 | SEMICONDUCTOR LASER DEVICE - In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest. | 12-25-2008 |
| 20090022192 | Laser Device and Lasing Method - A laser device which causes lasing with a use of a semiconductor quantum dot is provided with: a laser member ( | 01-22-2009 |
| 20090022193 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate | 01-22-2009 |
| 20090028201 | OPTICAL COMMUNICATION SYSTEM AND OPTICAL TRANSMITTER - An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of In | 01-29-2009 |
| 20090034568 | Zinc Oxide Based Compound Semiconductor Device - There is provided a zinc oxide based compound semiconductor device in which drive voltage is not raised, property of crystal is satisfactory and device characteristics is excellent, even when the semiconductor device is formed by forming a lamination portion having a hetero junction of the ZnO based compound semiconductor layers. The zinc oxide based compound semiconductor device includes a substrate ( | 02-05-2009 |
| 20090046754 | Nitride semiconductor device and method of manufacturing the same - A method of manufacturing a nitride semiconductor device includes the steps of: forming a division guide groove by applying a laser beam having a wavelength and energy density causing multiphoton absorption to a surface of a substrate having a group III nitride semiconductor layer grown on a major surface thereof; removing deposits from the surface of the substrate by applying a laser beam having the wavelength to the surface of the substrate at energy density causing substantially no multiphoton absorption on the substrate; and dividing the substrate along the division guide groove. | 02-19-2009 |
| 20090059983 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer. | 03-05-2009 |
| 20090067462 | SEMICONDUCTOR DEVICE - A semiconductor device includes an InP substrate, an AlGaInAs-based first layer, an AlGaInAs-based second layer, an InGaAsP-based third layer, and an InGaAsP-based fourth layer. The first and second layers have compositions which are same or substantially same as each other on an interface therebetween. The composition of the layer varies such that a band gap continuously increases from the first layer side toward the third layer side. The compositions of the second and third layers are set such that energy levels of a valence band maximum are substantially equal to each other on an interface between the second and third layers. The composition of the third layer varies such that a band gap continuously increases from the second layer side toward the fourth layer side. The compositions of the third and fourth layers are same or substantially same as each other on an interface between the third and fourth layers. | 03-12-2009 |
| 20090086778 | NITRIDE BASED SEMICONDUCTOR LASER DEVICE - One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 | 04-02-2009 |
| 20090097517 | VCSEL DEVICE AND METHOD FOR FABRICATING VCSEL DEVICE - Provided is a VCSEL device that includes a substrate on which at least a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type are stacked. The second semiconductor multilayer film forms a resonator together with the first semiconductor multilayer film. A conductive first protecting layer is formed in an area in the second semiconductor multilayer film. The area includes at least an emission outlet that emits laser light. An annular electrode is formed on the first protecting layer, and the emission outlet is formed in the annular electrode. An encapsulating material encapsulates at least the first protecting layer and the annular electrode. | 04-16-2009 |
| 20090097518 | Vertical cavity surface emitting laser diode and a method for producing the same - A vertical cavity surface emitting laser diode (VCSEL) with a new structure is disclosed. The VCSEL of the invention provides the active layer, the first spacer layer, the tunnel junction, the second spacer layer burying the tunnel junction. Only the first spacer layer is ion-implanted to form a high-resistive region around the tunnel junction. The current injected into the second spacer layer is confined by the tunnel junction to reach the active layer, which reduces the increase of the parasitic resistance of the device. The high-resistive region around the tunnel junction reduces the parasitic capacitance of the device. | 04-16-2009 |
| 20090097519 | Semiconductor Laser and Method for Producing the Semiconductor Laser - A semiconductor laser is embodied as a surface emitting thin-film semiconductor laser ( | 04-16-2009 |
| 20090097520 | INEXPENSIVE VARIABLE REP-RATE SOURCE FOR HIGH-ENERGY, ULTRAFAST LASERS - System for converting relatively long pulses from rep-rate variable ultrafast optical sources to shorter, high-energy pulses suitable for sources in high-energy ultrafast lasers. Fibers with positive group velocity dispersion (GVD) and self phase modulation are advantageously employed with the optical sources. These systems take advantage of the need for higher pulse energies at lower repetition rates so that such sources can be cost effective. | 04-16-2009 |
| 20090110017 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - A semiconductor light-emitting element includes a semiconductor layer including a light-emitting layer, a refractive index gradient layer provided on a light extraction surface of the semiconductor layer, and a holding substrate bounded to an outer surface of the refractive index gradient layer with an adhesion layer interposed therebetween. A refractive index of the refractive index gradient layer is changed continuously or stepwise in a film thickness direction such that a semiconductor-layer-side refractive index is substantially equivalent to a refractive index of the semiconductor layer and a holding-substrate-side refractive index is substantially equivalent to a refractive index of the holding substrate. The refractive index gradient layer is formed by vapor plating. | 04-30-2009 |
| 20090116523 | HYBRID LASER DIODE - Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide. | 05-07-2009 |
| 20090116524 | Single-exciton nanocrystal laser - A laser system employing amplification via a single exciton regime and to optical gain media having single exciton amplification is provided. | 05-07-2009 |
| 20090129417 | Surface-Emitting Laser Diode and Method of Manufacturing the Same - A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section | 05-21-2009 |
| 20090129418 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A method for manufacturing a semiconductor laser device includes forming a laminate having a semiconductor layer of a first conductivity type, an active layer and a semiconductor layer of a second conductivity type. The waveguide region is formed to guide light perpendicular to the direction of width by restricting the light from spreading in the direction of width in the active layer, such that the semiconductor laser device has a first waveguide region and a second waveguide region. The first waveguide region is formed to confine light within the limited active layer by means of a difference in the refractive index between the active layer and the regions on both sides of the active layer by limiting the width of the active layer. In forming the second waveguide region, light is confined therein by providing effective difference in refractive index in the active layer. | 05-21-2009 |
| 20090135870 | Light source based on simultaneous Two-Photon emission - A semiconductor device which produces at least 1 W/m2 two photon emission power per area, when operating at one or more temperatures greater than 20 K. | 05-28-2009 |
| 20090135871 | Two-Dimensional Photonic Crystal Surface Emitting Laser - An objective of the present invention is to provide a laser capable of producing a radially polarized laser beam with an annular cross section. A laser oscillator | 05-28-2009 |
| 20090135872 | SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND IMAGE FORMING APPARATUS INCLUDING SURFACE EMITTING LASER - A surface emitting laser that oscillates at a wavelength λ includes an upper reflector, a lower reflector, an active layer, and a spacer layer. The spacer layer is a laminated structure that includes a first semiconductor sublayer having a composition of Al | 05-28-2009 |
| 20090147812 | HETEROSTRUCTURE, INJECTOR LASER, SEMICONDUCTOR AMPLIFYING ELEMENT AND A SEMICONDUCTOR OPTICAL AMPLIFIER A FINAL STAGE - The heterostructures are used for creation of semiconductor injection emission sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers that are used in fiber optic communication and data transmission systems, in optical superhigh-speed computing and switching systems, in development of medical equipment, laser industrial equipment, frequency-doubled lasers, and for pumping solid-state and fiber lasers and amplifiers. The heterostructure, the injection laser, the semiconductor amplifying element, and the semiconductor optical amplifier are proposed, the essential distinction of which consists in modernization of the active region and the leak-in region of the heterostructure, combined choice of location, compositions, refractive indices and thicknesses of the heterostructure layers providing the efficient functioning of the injection lasers, the semiconductor amplifying elements and the semiconductor optical amplifiers in the transient region of formation of controllable emission leak from the active layer. | 06-11-2009 |
| 20090147813 | LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING LIGHT EMITTING DEVICE - A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method. | 06-11-2009 |
| 20090161712 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND PRODUCTION EQUIPMENT OF THE SAME | 06-25-2009 |
| 20090175304 | Two-Dimensional Photonic Crystal Surface Emitting Laser Light Source - A two-dimensional photonic crystal surface emitting laser light source according to the present invention includes a two-dimensional photonic crystal made of a plate-shaped body material provided with a periodic arrangement of identically-shaped holes | 07-09-2009 |
| 20090175305 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate. | 07-09-2009 |
| 20090196317 | LIGHT EMITTING DEVICE - It is enabled to provide that a light emitting device have an electron blocking layer ( | 08-06-2009 |
| 20090207872 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a nitride semiconductor light emitting device having an n-type ohmic electrode with an Au face excellent in ohmic contacts and in mounting properties, and a method of manufacturing the same. The device uses an n-type ohmic electrode having a laminate structure that is composed of: a first layer containing Al as a main ingredient and having a thickness not greater than 10 nm or not less than 3 nm; a second layer containing one or more metals selected from Mo and Nb, so as to suppress the upward diffusion of Al; a third layer containing one or more metals selected from Ti and Pt, to suppress the downward diffusion of Al; and a fourth layer being made of Au, from the side in contact with an n-type nitride substrate in order of mention, and after the laminate structure is formed, the n-type ohmic electrode is annealed. | 08-20-2009 |
| 20090213888 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor laser device includes a semiconductor laser, a dangling bond terminating film a cleaved surface of the semiconductor laser and composed of a lithium film or a beryllium film, and a coating film on the dangling bond terminating film. | 08-27-2009 |
| 20090290610 | Method for Laterally Cutting Through a Semiconductor Wafer and Optoelectronic Component - A method for laterally dividing a semiconductor wafer ( | 11-26-2009 |
| 20100091808 | Semiconductor laser device and manufacturing method therefor - Provides a semiconductor laser device, as well as a manufacturing method therefor, capable of solving a problem of yield decreases in a structure for mounting a nitride semiconductor laser element onto a mount member. The nitride semiconductor laser device has a submount | 04-15-2010 |
| 20100150193 | MQW Laser Structure Comprising Plural MQW Regions - Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons. | 06-17-2010 |
| 20100195684 | PHOTOELECTROCHEMICAL ETCHING FOR LASER FACETS - A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets. | 08-05-2010 |
| 20100208760 | SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME - A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region; and a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region. A first semiconductor layer next to the first selectively oxidized layer has an Al composition greater than that of a second semiconductor layer next to the second selectively oxidized layer, the first conductive region having a size smaller than that of the second conductive region. | 08-19-2010 |
| 20100220757 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - One embodiment of the present invention provides a semiconductor light-emitting element having both high light-extraction efficiency and excellent adhesion between a light-extraction surface and a sealing resin, and it also provides a process for production thereof. This element comprises a semiconductor multilayered film and a light-extraction surface. In the multilayered film, plural semiconductor layers and an active layer are stacked. The light-extraction surface is provided on the multilayered film, and plural micro-projections are formed thereon. These micro-projections have flat top faces parallel to the multilayered film, and they can be formed by an etching process. The etching process is performed by use of a dot pattern as a mask, and the dot pattern is formed by phase separation of a block copolymer. | 09-02-2010 |
| 20100246622 | BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME - A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion. | 09-30-2010 |
| 20100265976 | SEMICONDUCTOR LAYER STRUCTURE - A III-nitride compound device which has a layer of AlInN ( | 10-21-2010 |
| 20110058582 | LUMINESCENT MATERIAL AND LIGHT-EMITTING DEVICE - A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): | 03-10-2011 |
| 20110058583 | LUMINESCENT MATERIAL AND LIGHT-EMITTING DEVICE - A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): | 03-10-2011 |
| 20110075693 | SEMICONDUCTOR LASER - The present invention provides a semiconductor laser realizing reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. A trench is provided between adjacent ridges, and a wiring layer electrically connecting an upper electrode and a pad electrode is disposed in the air at least above the trench. The wiring layer in a portion above the trench has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer when the wiring layer repeats expansion and shrink under severe environment of a large temperature difference is suppressed. | 03-31-2011 |
| 20110103418 | SUPERLUMINESCENT DIODES BY CRYSTALLOGRAPHIC ETCHING - An optoelectronic device, comprising an active region and a waveguide structure to provide optical confinement of light emitted from the active region; a pair of facets on opposite ends of the device, having opposite surface polarity; and one of the facets which has been roughened by a crystallographic chemical etching process, wherein the device is a nonpolar or semipolar (Ga,In,Al,B)N based device. | 05-05-2011 |
| 20110158274 | Optical Device - A laser diode is configured with a substrate delimited by opposite AR and HR reflectors and a gain region. The gain region bridges the portions of the respective AR and HR reflectors and is configured with a main resonant cavity and at least one side resonant cavity. The main resonant cavity spans between the portions of the respective reflectors, and at least one additional resonant cavity extends adjacent to the main resonator cavity. The gain region is configured so that stimulated emission is generated only the main resonant cavity. Accordingly, the laser diode is operative to radiate a high-power output beam emitted through the portion of the AR reflector which is dimensioned to shape the output beam with the desired near-field. | 06-30-2011 |
| 20110176568 | NITRIDE SEMICONDUCTOR LASER DIODE - A nitride semiconductor laser diode includes a second conductive cladding layer formed on an active layer, and including a ridge portion having a raised cross-sectional shape, and flat portions located on both sides of the ridge portion; a light-absorbing layer formed on each of the flat portions, and having an optical absorption coefficient larger than the second conductive cladding layer. The light-absorbing layer includes a first region provided at a side of a light-emitting facet, and having a distance Di1 from a line-symmetric axis in a longitudinal direction of the ridge portion to a side surface of the light-absorbing layer; and a second region provided at a side opposite to the light-emitting facet, and having a distance Di2 from the line-symmetric axis to the side surface of the light-absorbing layer. A relationship between the Di1 and the Di2 is represented by Di1| 07-21-2011 | |
| 20110188527 | NANOTUBE ARRAY INJECTION LASERS - Carbon nanotube (CNT)-based devices and technology for their fabrication are disclosed. The planar, multiple layer deposition technique and simple methods of change of the nanotube conductivity type during the device processing are utilized to provide a simple and cost effective technology for large scale circuit integration. Such devices as p-n diode, CMOS-like circuit, bipolar transistor, light emitting diode and laser are disclosed, all of them are expected to have superior performance then their semiconductor-based counterparts due to excellent CNT electrical and optical properties. When fabricated on semiconductor wafers, the CNT-based devices can be combined with the conventional semiconductor circuit elements, thus producing hybrid devices and circuits. | 08-04-2011 |
| 20110200064 | Optical device and optical apparatus - An optical device includes: an optical element having a first light-emitting region in the vicinity of a first surface and a first metal layer in contact with at least a region of the first surface which does not face the first light-emitting region; a support body disposed on the side of the optical element toward which the first surface faces; and a fuse-bonding layer disposed between the first surface and the support body and in a region which does not face the first light-emitting region, the fuse-bonding layer bonding the first metal layer and the support body. | 08-18-2011 |
| 20110206079 | SIDE EMITTING SEMICONDUCTOR PACKAGE - A side emitting semiconductor package includes a two-sided electric circuit formed on a silicon substrate of the package, and a plurality of semiconductor light emitting devices bonded on two bilateral surfaces of the electric circuit to provide a surface mounted device with two light emitting sides. | 08-25-2011 |
| 20110235664 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application. | 09-29-2011 |
| 20110280267 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package includes a base body made of resin, a first sealing member mounted on an upper surface of the base body and a translucent second sealing member mounted on a front surface of the base body. The base body has an opening passing through the base body from the upper surface to the front surface, and the side of the opening closer to the upper surface is sealed with the first sealing member, while the side of the opening closer to the front surface is sealed with the second sealing member. | 11-17-2011 |
| 20120093186 | NITRIDE-BASED SEMICONDUCTOR LASER ELEMENT AND OPTICAL APPARATUS - This nitride-based semiconductor laser element includes a semiconductor element layer made of a nitride-based semiconductor having an emitting-side cavity facet and a reflecting-side cavity facet, and a facet coating film formed on the emitting-side cavity facet. The facet coating film has a first dielectric film made of aluminum nitride formed in contact with the emitting-side cavity facet, a second dielectric film made of aluminum oxynitride formed on a side of the first dielectric film opposite to the emitting-side cavity facet, a third dielectric film made of aluminum oxide formed on a side of the second dielectric film opposite to the first dielectric film, a fourth dielectric film made of aluminum oxynitride formed on a side of the third dielectric film opposite to the second dielectric film, and a fifth dielectric film made of aluminum oxide formed on a side of the fourth dielectric film opposite to the third dielectric film. | 04-19-2012 |
| 20120106582 | HEAT SINK FOR A PULSED HIGH-POWER LASER DIODE - A semiconductor laser module having a substrate and having at least one semiconductor laser situated on the substrate, the substrate having a layer structure which includes at least one primary layer which establishes a thermal contact with the semiconductor laser. The semiconductor laser is designed in such a way that it emits heat pulses having a minimum specific heat of approximately 3 mJ per mm | 05-03-2012 |
| 20120114000 | METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE - A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semiconductor layer; forming a first dielectric film on a first region of a surface of the semiconductor layer; forming a second dielectric film on a second region of the surface of the semiconductor layer, the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a predetermined temperature range after the second dielectric film forming, wherein within the temperature range, as the temperature is lowered, a difference increases between a bandgap in the semiconductor layer below the second dielectric film and a bandgap in the semiconductor layer below the first dielectric film due to the thermal treatment. | 05-10-2012 |
| 20120128017 | Electrical Devices Formed using Ternary Semiconducting Compounds - An electrical device includes a charge carrier transport layer formed using a ternary semiconducting compound having a stoichiometry of 1:1:1 and an element combination selected from the set of I-II-V, I-III-IV, II-II-IV, and I-I-VI; or having a stoichiometry of 3:1:2 and an element combination selected from the set of I-III-V; or having a stoichiometry of 2:1:1 and an element combination selected from the set of I-II-IV. In some embodiments, the charge carrier transport layer is used as the radiation absorption layer for a photovoltaic cell, or a light emitting layer of a light emitting device. Other devices, such as laser diode, a photodetection device, an optical modulator, a transparent electrode and a window layer, can also be formed using the ternary semiconducting compound as the charge carrier transport. | 05-24-2012 |
| 20120177075 | Semiconductor Laser with Absorber Applied to a Laser Mirror - The invention relates to a semiconductor laser having at least one semiconductor substrate ( | 07-12-2012 |
| 20120177076 | SEMICONDUCTOR LASER MODULE - A semiconductor laser module includes: a semiconductor laser element which emits light; a package base having a through hole; a lead pin which passes through the through hole and supplies the current to the semiconductor laser element; a glass material which seals the through hole through which the lead pin passes; and a cap which has a window from which light emitted by the semiconductor laser element is taken out and has the semiconductor laser element in the inside thereof, the cap being joined in air sealing relation to the package base. The lead pin is an iron-nickel alloys in which the coefficient of linear expansion is not higher than a predetermined ratio in difference with the glass material, the saturation magneto-striction constant is not higher than a predetermined value, and volume resistivity is not higher than a predetermined rate. | 07-12-2012 |
| 20120201262 | Edge-Emitting Semiconductor Laser - An edge emitting semiconductor laser ( | 08-09-2012 |
| 20120207185 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER - A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga, the method includes the steps of: forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate. | 08-16-2012 |
| 20120213239 | SEMICONDUCTOR LASER CHIP PACKAGE WITH ENCAPSULATED RECESS MOLDED ON SUBSTRATE AND METHOD FOR FORMING SAME - A laminate leadless carrier package having a semiconductor chip mounted at the edge of a recess region in a substrate supporting the chip, the substrate having a plurality of conductive and dielectric layers, a wire bond coupled to the optoelectronic chip and a wire bond pad positioned on the top surface of the substrate. An encapsulation covers the laser chip, the wire bond, and at least a portion of the top surface of the substrate including the recess region. The encapsulation is an optically transparent molding compound. The package is arranged to be mounted as a side-looker and/or a top-looker. | 08-23-2012 |
| 20120243569 | MULTI-BEAM SEMICONDUCTOR LASER APPARATUS - A multi-beam semiconductor laser apparatus includes three or more stripe semiconductor laser emission units which are arranged on a substrate, isolation grooves which separate the semiconductor laser emission units from each other, and pad electrodes which are disposed on outer sides of the outermost semiconductor laser emission units. The isolation grooves are formed between the pad electrodes and the semiconductor laser emission units adjacent to the pad electrodes and between adjacent semiconductor laser emission units. A distance between two isolation grooves formed on outer sides of the outermost semiconductor laser light emission units is smaller than a distance between two isolation grooves formed on both sides of inner ones of the semiconductor laser light emission units. | 09-27-2012 |
| 20120263203 | SEMICONDUCTOR LASER MODULE AND MANUFACTURING METHOD THEREOF - To reduce the stress imposed on an LD chip and to sufficiently secure the heat radiation property of the LD chip. An LD module includes a PLC board, an LD chip, and a solder bump. The PLC board includes a PLC electrode. The LD chip includes an LD electrode, and a stripe-form active layer formed in an inner part adjacent to the LD electrode. The solder bump bonds the PLC electrode and the LD electrode by being disposed only in a part right under the active layer. | 10-18-2012 |
| 20120287955 | OPTICAL SEMICONDUCTOR ELEMENT PACKAGE AND OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor element package, includes a ceramic wiring substrate portion having a mounting area for mounting an optical semiconductor element in a center part, and including an element electrode for connecting the optical semiconductor element, and an external connection electrode connected to the element electrode, and a metal sealing ring provided on the ceramic wiring substrate portion, and including an opening portion exposing the element electrode and the mounting area, in a center part, and a ring-like protruding portion provided to an outer peripheral part of the opening portion. | 11-15-2012 |
| 20120287956 | SEMICONDUCTOR LASER - A semiconductor laser includes a semiconductor body having an active region that generates radiation and a ridge-shaped region, wherein the ridge-shaped region has a longitudinal axis running along an emission direction, a central axis of the semiconductor body runs in the emission direction and the longitudinal axis is arranged in a manner offset with respect to the central axis in a transverse direction. | 11-15-2012 |
| 20120307853 | DIODE LASER - A diode laser arrangement having a number of laser bars, wherein each laser bar has a number of emitters generating laser beams arranged offset in a stacked manner to one another, in at least two stacks to form the arrangement. | 12-06-2012 |
| 20120314726 | LASER DIODE USING ZINC OXIDE NANORODS AND MANUFACTURING METHOD THEREOF - Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods. | 12-13-2012 |
| 20130010822 | VERTICAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD - Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer. | 01-10-2013 |
| 20130022070 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a semiconductor laser device capable of reliably suppressing degradation of an end face due to interface oxidation and distortion application, and to a manufacturing method of the same. | 01-24-2013 |
| 20130022071 | NITRIDE SEMICONDUCTOR LASER DEVICE AND WAFER - A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film. | 01-24-2013 |
| 20130028280 | SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD OF THE SAME - Disclosed herein is a semiconductor laser element including: on a substrate, a laser structure section configured to include a semiconductor laminated structure having an n-type semiconductor layer, active layer and p-type semiconductor layer in this order, and a p-side electrode on top of the p-type semiconductor layer; a pair of resonator edges provided on two opposed lateral sides of the semiconductor laminated structure; and films made of a non-metallic material having a thermal conductivity higher than that of surrounding gas, and provided in the region of the top side of the laser structure section including the positions of the resonator edges. | 01-31-2013 |
| 20130039375 | PHOTONIC CRYSTAL SURFACE EMISSION LASER - A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein a | 02-14-2013 |
| 20130044780 | SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING A SURFACE-EMITTING LASER AND METHOD OF MANUFACTURING A SURFACE-EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING A SURFACE-EMITTING LASER ARRAY - Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental transverse mode. The method includes after performing selective oxidation: exposing a bottom face of a surface relief structure by etching a second semiconductor layer with a first semiconductor layer where a pattern of the surface relief structure has been formed as an etching mask and a third semiconductor layer as an etching stop layer; and exposing a top face of the surface relief structure by etching the first semiconductor layer where the pattern of the surface relief structure has been formed, with the second semiconductor layer and the third semiconductor layer as etching stop layer. | 02-21-2013 |
| 20130058369 | SEMICONDUCTOR DEVICE HAVING AN InGaN LAYER - An InGaN-on-substrate structure that includes an InGaN layer and two mirror layers on opposing sides of and sandwiching the InGaN layer. The InGN layer includes an InGaN seed layer and an active InGaN layer grown on the InGaN seed layer. Such a structure is useful in a vertical optoelectronic device. | 03-07-2013 |
| 20130128909 | Edge-Emitting Semiconductor Laser - An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body. | 05-23-2013 |
| 20130142209 | SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor laser element including: preparing a wafer; forming first grooves on at least one of an upper surface and a lower surface of the wafer, each of the first grooves being spaced apart from the optical waveguide formed in the wafer and extending in a direction intersecting the optical waveguide in a plan view; forming second grooves on the one of the upper surface and the lower surface of the wafer, each of the second grooves extending in a direction intersecting a straight line extended from each of the first grooves, and each of the second grooves having a smooth surface compared with the first grooves; dividing the wafer along the first grooves to obtain a plurality of laser bars; and dividing the laser bars in a direction intersecting an extending direction of the first grooves to obtain the semiconductor laser elements. | 06-06-2013 |
| 20130148681 | METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER DEVICE - There is provided a method of manufacturing a semiconductor laser device. The method includes: preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device; forming a cutting guide groove in a partial region on a surface of the production substrate, the partial region being on a scribe line on a resonator-end-face side of the semiconductor laser device and including one or more corners of the semiconductor laser device, and the cutting guide groove being formed in an extending direction along the scribe line and being V-shaped in cross section when viewed from the extending direction; and cutting, along the scribe line, the production substrate in which the cutting guide groove is formed. | 06-13-2013 |
| 20130156057 | SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device. | 06-20-2013 |
| 20130156058 | LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A light emitting device includes a substantially cuboid package made up of a molded article and a lead that is embedded in the molded article, and a light emitting element that is installed in the package. The lead has a connector where the light emitting element is installed, and a terminal part and an exposed part that are linked to the connector. The package has a bottom face, a front face that is a light emission face contiguous with the bottom face, and a rear face that is contiguous with the bottom face and is opposite the front face. The first terminal part and the exposed part are linked to the rear face side of the connector are exposed from the molded article and contiguous with the bottom face and the rear face, and are isolated at the bottom face. | 06-20-2013 |
| 20130163628 | PROCESS FOR FORMING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR, SURFACE EMITTING LASER USING TWO-DIMENSIONAL PHOTONIC CRYSTAL AND PRODUCTION PROCESS THEREOF - A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole. | 06-27-2013 |
| 20130163629 | USER-SELECTABLE LASER AND OPTICAL TRANSMITTER HAVING THE SAME - Provided are a user-selectable laser and an optical transmitter including the same. The user-selectable laser is an external cavity laser including a semiconductor laser diode for outputting an optical signal, and a wavelength selection filter. The user-selectable laser may allow a user to select a wavelength selection filter which is optically coupled with the semiconductor laser diode and selectively causes oscillation at the wavelength of an optical signal output from the semiconductor laser diode. | 06-27-2013 |
| 20130182733 | WAVEGUIDE-TYPE OPTICAL SEMICONDUCTOR DEVICE - A waveguide-type optical semiconductor device includes a substrate with a main surface; a structure including a stacked semiconductor layer including a core layer provided on the main surface of the substrate, a stripe-shaped mesa portion protruding in a first direction orthogonal to the main surface and extending in a second direction parallel to the main surface, and a pair of stripe-shaped grooves defining the stripe-shaped mesa portion and extending in the second direction; a protrusion provided in the pair of stripe-shaped grooves, the protrusion protruding from the structure in the first direction; and a resin portion covering a side face of the protrusion, the resin portion being buried in the stripe-shaped grooves. The relative position of the protrusion with respect to the structure is fixed. In addition, the side face of the protrusion intersects with the second direction when viewed from the first direction. | 07-18-2013 |
| 20130188662 | SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser includes: a semiconductor layer including an active layer and a ridge portion, the ridge portion facing a current injection region of the active layer; and an embedded film covering a side surface of the ridge portion and a top surface of the semiconductor layer, wherein the embedded film includes a first layer configured of a silicon oxide film, a second layer made of a silicon compound having a refractive index lower than that of the active layer and having a silicon content higher than a stoichiometric ratio, and a third layer made of an inorganic insulating material in this order of closeness to the ridge portion and the semiconductor layer. | 07-25-2013 |
| 20130208747 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of In | 08-15-2013 |
| 20130208748 | LASER DIODE WITH HIGH EFFICIENCY - It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time. | 08-15-2013 |
| 20130230067 | METHODS FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS, AND OPTOELECTRONIC SEMICONDUCTOR LASERS - A method for producing an optoelectronic semiconductor component includes:
| 09-05-2013 |
| 20130230068 | Edge-Emitting Semiconductor Laser Diode and Method for Producing the Same - An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed. | 09-05-2013 |
| 20130250990 | LASER EMITTING CHIP PACKAGE - A laser emitting chip package includes a circuit board, a laser emitting chip, and at least three gold balls. The circuit board includes at least two substrate-pad areas. The laser emitting chip includes at least two chip-pad areas. Each of the chip-pad areas spatially corresponds to a respective one of the substrate-pad areas. The at least three gold balls are explanted on the at least two chip-pad areas. The laser emitting chip is supported on the circuit board by the at least three gold balls in a triangular or square arrangement between the chip-pad areas and the substrate-pad areas. The laser emitting chip is electrically connected to the circuit board through the gold balls. | 09-26-2013 |
| 20130250991 | Optoelectronic Devices - Optoelectronic devices have a photoactive region containing semiconductor material doped with ions of a rare earth element. Characteristic transitions associated with internal energy states of the rare earth dopant ions are modified by direct interaction of those states with an energy state in the semiconductor band structure. Eu | 09-26-2013 |
| 20130259077 | HETEROGENEOUS LASER WITH HIGH EFFICIENCY AND METHOD FOR MANUFACTURING THE LASER - The laser includes an amplifier with III-V heterostructure, designed to generate an optical wave, and a waveguide coupled optically to the amplifier, said waveguide having a hat-shaped cross section, the top of which is proximal to the amplifier. The top of the hat and the lateral sides of the hat are covered with a layer of a dielectric material in the vicinity of the amplifier. The hat is formed by a base and a protrusion of the waveguide, the material forming the base being distinct from the material forming the protrusion. | 10-03-2013 |
| 20130266035 | Housing and Method for Producing a Housing - A housing for an optoelectronic semiconductor component includes a housing body having a mounting plane and a leadframe with a first connection conductor and a second connection conductor. The housing body deforms the leadframe in some regions. The leadframe has a main extension plane which extends obliquely or perpendicularly with respect to the mounting plane. A semiconductor component having such a housing and a semiconductor chip and a method for producing a housing are also disclosed. | 10-10-2013 |
| 20130272333 | Laser Diode Device - A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 μm. | 10-17-2013 |
| 20130301666 | LASERS WITH BEAM-SHAPE MODIFICATION - A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall. | 11-14-2013 |
| 20130322476 | CONTROLLED-IMPEDANCE OUT-OF-SUBSTRATE PACKAGE STRUCTURES EMPLOYING ELECTRICAL DEVICES, AND RELATED ASSEMBLIES, COMPONENTS, AND METHODS - Controlled-impedance out-of-substrate package structures employing electrical devices and related assemblies, components, and methods are disclosed. An out-of-substrate package structure may be used to electrically couple an electrical device to an electrical substrate, for example a printed circuit board. The out-of-substrate package structure may be electrically coupled to the electrical substrate. Ground paths of the out-of-substrate package structure may be arranged proximate to the electrical device and arranged symmetric with respect to at least one geometric plane intersecting the electrical device. In this regard, electric field lines generated by current flowing into the electrical device tend to terminate at the return or ground paths allowing for impedance to be more easily controlled. Accordingly, the out-of-substrate package structure may be impedance matched in a better way with respect to power provided from the electrical substrate enabling faster electrical device speeds. | 12-05-2013 |
| 20130322477 | OPTICAL DEVICE, METHOD OF MANUFACTURING THE SAME, AND LASER MODULE - An optical device includes a ridge semiconductor laser element formed on a substrate, a first insulating film coating a lateral wall portion of a ridge structure of the ridge semiconductor laser element, and a second insulating film coating the ridge structure from above the first insulating film in an end portion region of the ridge structure. The second insulating film has a density lower than a density of the first insulating film. | 12-05-2013 |
| 20130343417 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optical semiconductor device includes: a semiconductor substrate; a semiconductor laser part on the semiconductor substrate and having a vertical ridge; and an optical modulator part on the semiconductor substrate, having an inverted-mesa ridge, and modulating light emitted by the semiconductor laser part. | 12-26-2013 |
| 20140023102 | STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER - A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching. | 01-23-2014 |
| 20140023103 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer. | 01-23-2014 |
| 20140029636 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting layer, a first intermediate layer, and a second intermediate layer. The n-type and p-type semiconductor layers include a nitride semiconductor. The light emitting layer is provided between the n-type and p-type semiconductor layers, and includes barrier layers and a well layer. A bandgap energy of the well layer is less than that of the barrier layers. The first intermediate layer is provided between the light emitting layer and the p-type semiconductor layer. A bandgap energy of the first intermediate layer is greater than that of the barrier layers. The second intermediate layer includes first and second portions. The first portion is in contact with a p-side barrier layer most proximal to the p-type semiconductor layer. The second portion is in contact with the first intermediate layer. | 01-30-2014 |
| 20140029637 | Arrangement of Optical Semiconductor Elements - An arrangement with a multiplicity of optical semiconductor elements is disclosed. The semiconductor elements are respectively clamped against a semiconductor element carrier by way of a spring element. Additionally lying against the spring element is an optical element assigned to a respective semiconductor element, the spring element in this case being configured in such a way that it defines a fixed distance between the semiconductor element and the optical element. | 01-30-2014 |
| 20140036947 | EDGE-EMITTING SEMICONDUCTOR LASER ELEMENT - The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals | 02-06-2014 |
| 20140105235 | SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate. | 04-17-2014 |
| 20140126597 | ELECTRO-OPTICAL COMPONENT - The invention relates, inter alia, to a method for producing an electro-optical component ( | 05-08-2014 |
| 20140126598 | LIGHT EMITTING DEVICE - A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally. | 05-08-2014 |
| 20140133504 | Semiconductor Laser Diode - A semiconductor laser diode includes a substrate. A semiconductor layer sequence on the substrate has at least one active layer designed for generating laser light that is emitted along an emission direction during operation. At least one filter layer has a main extension plane that is parallel to a main extension plane of the active layer and that is designed to scatter and/or absorb light that propagates in the semiconductor layer sequence and/or the substrate in addition to the laser light. | 05-15-2014 |
| 20140133505 | Edge-Emitting Semiconductor Laser - An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure. | 05-15-2014 |
| 20140146842 | Semiconductor Stripe Laser - A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm | 05-29-2014 |
| 20140153601 | TUNABLE LASER USING III-V GAIN MATERIALS - Disclosed herein are techniques, methods, structures and apparatus that provide a laser monolithically integrated in a silicon photonic integrated circuit (PIC) that is suitable for high-performance coherent fiber-optic telecommunications and other applications. Among the features of a laser according to the present disclosure, and in particular a hybrid InGaAsP/Si laser, is an integrated Si isolator to protect the laser from back reflections; optical, rather than electrical pumping; and coupling the optical pump using an InGaAsP grating coupler that acts simultaneously as a WDM coupler and laser mirror. | 06-05-2014 |
| 20140153602 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A P-TYPE SEMICONDUCTOR LAYER WITH A P-TYPE IMPURITY - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting part, and a p-side electrode. The light emitting part is provided between the n-type and the p-type semiconductor layers, and includes a plurality of barrier layers and a plurality of well layers. The p-side electrode contacts the p-type semiconductor layer. The p-type semiconductor layer includes first, second, third, and fourth p-type layers. The first p-type layer contacts the p-side electrode. The second p-type layer contacts the light emitting part. The third p-type layer is provided between the first p-type layer and the second p-type layer. The fourth p-type layer is provided between the second p-type layer and the third p-type layer. The second p-type layer contains Al and contains a p-type impurity in a lower concentration lower than that in the first concentration. | 06-05-2014 |
| 20140185639 | GROUP III-V SUBSTRATE MATERIAL WITH THIN BUFFER LAYER AND METHODS OF MAKING - A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm | 07-03-2014 |
| 20140192832 | ELECTRO-OPTICAL MODULE - An electro-optical module is provided, which includes: a substrate having a first surface with a groove and an opposite second surface; a plurality of support members disposed on the first surface of the substrate; at least an electro-optical element having opposite active and non-active surfaces and disposed in the groove of the substrate via the non-active surface thereof; an interposer disposed on the first surface of the substrate and the electro-optical element for electrically connecting the electro-optical element to the substrate, wherein the interposer has a through hole corresponding in position to the active surface of the electro-optical element; and a transparent plate disposed over the first surface of the substrate and the interposer through the support members and having a lens portion corresponding in position to the through hole of the interposer, thereby reducing signal losses, improving alignment precision, and achieving preferred thermal dissipation and EMI shielding effects. | 07-10-2014 |
| 20140219303 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer, an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode, a first pad electrode electrically connected to the first electrode, and a second pad electrode electrically connected to the second electrode, the second pad electrode being exposed to a top surface of the light emitting structure. | 08-07-2014 |
| 20140219304 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate. | 08-07-2014 |
| 20140321491 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF, AND SUBMOUNT MANUFACTURING METHOD - A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes. | 10-30-2014 |
| 20140328362 | Highly Integrable Semiconductor Device - Described herein is a novel technique used to make novel thin III-V semiconductor cleaved facet edge emitting active optical devices, such as lasers and optical amplifiers. These fully processed laser platelets with both top side and bottom side electrical contacts can be thought of as freestanding optoelectronic building blocks that can be integrated as desired on diverse substrates for a number of applications, many of which are in the field of communications. The thinness of these platelets and the precision with which their dimensions are defined using the process described herein makes it conducive to assemble them in dielectric recesses on a substrate, such as silicon, as part of an end-fire coupled, coaxial alignment optoelectronic integration strategy. This technology has been used to integrate edge emitting lasers onto silicon substrates, a significant challenge in the field of silicon optoelectronics. | 11-06-2014 |
| 20140348194 | VCSEL AND MANUFACTURING METHOD OF THE SAME - Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding. | 11-27-2014 |
| 20140362884 | METHOD AND DEVICE FOR PRODUCING WHITE LIGHT FROM Y2O3 NANO-POWDERS - A device for producing white light includes a light conversion module and a light source. The light conversion module includes undoped metal oxide powder comprising particles having a size of less than 50 nm. The light source generates excitation light having a wavelength in the near infrared region. The excitation light is directed towards the undoped metal oxide powder, the undoped metal oxide powder is excited with the excitation light, and the excited undoped metal oxide powder emits white light having a continuous spectral distribution in the range of 440 nm to 900 nm. | 12-11-2014 |
| 20140362885 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND ILLUMINATION DEVICE - The problem to be solved is to provide a semiconductor light emitting device attaining the improvement of the color rendering property in addition to the improvement of the light emission efficiency. | 12-11-2014 |
| 20150023379 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting element that is excellent in reliability and is capable of being driven by a lower voltage and a semiconductor light emitting device that includes the semiconductor light emitting element. The semiconductor light emitting element includes: a semiconductor layer; an electrode layer; a metal layer that contains a hydrogen storage metal; and a plated layer in order. | 01-22-2015 |
| 20150043601 | LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer. | 02-12-2015 |
| 20150063388 | METHOD FOR MANUFACTURING A SEMICONDUCTOR METHOD DEVICE BASED ON EPITAXIAL GROWTH - This invention relates to a method for manufacturing a semiconductor device and semiconductor manufactured thereby, including growing, from a seed island mesa, an abrupt hetero-junction comprising a semiconductor crystal with few crystal defects on a dissimilar substrate that can be used as light emitting and photovoltaic device. | 03-05-2015 |
| 20150078411 | TUNABLE LASER, A METHOD FOR MAKING, AND A METHOD FOR OPERATING SUCH A LASER - Semiconductor lasers, in particular Quantum Cascade Lasers (QCLs) are tuable especially in the mid-IR spectral range, e.g. in wavelengths of about 3-14 μm, by precisely controlling the laser's temperature in the vicinity of the active region. The present invention introduces a novel design for locally heating the active region, thereby allowing fast heating and thus tuning a laser. It is generally applicable for lasers across the field, e.g. to QCLs with multi-color emitters or to Vertical-Cavity Single-Emitter Lasers (VCSELs) or to Distributed Feedback (DFB) lasers. Essentially, the invention consists of structurally integrating a heating resistor as part of the laser, placed close to the component to be temperature-controlled, i.e. the active region or the grating, etc., and feeding this resistor with a variable electrical current in order to locally control the thermal dissipation. In multi-emitter lasers, a resistor can be associated with each emitter section to tune the temperature of each section and thus its emitted wavelength. Similarly, in multisection DBR lasers, with a resistor associated with each grating, the latter can be tuned and thus the associated wavelength of the optical cavity. The invention also includes a novel manufacturing process, especially for buried heterostructure lasers. | 03-19-2015 |
| 20150098482 | METHODS FOR DICING A COMPOUND SEMICONDUCTOR WAFER, AND DICED WAFERS AND DIE OBTAINED THEREBY - Methods are provided for using masking techniques and plasma etching techniques to dice a compound semiconductor wafer into dies. Using these methods allows compound semiconductor die to be obtained that have smooth side walls, a variety of shapes and dimensions, and a variety of side wall profiles. In addition, by using these techniques to perform the dicing operations, the locations of features of the die relative to the side walls are ascertainable with certainty such that one or more of the side walls can be used as a passive alignment feature to precisely align one or more of the die with an external device. | 04-09-2015 |
| 20150103856 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes a nitride semiconductor light emitting element and a package in which the nitride semiconductor light emitting element is accommodated. The package includes a base table in which openings are formed, a cap defining an accommodation space for accommodating the nitride semiconductor light emitting element together with the base table, lead pins passing through the openings and electrically connected to the nitride semiconductor light emitting element, and insulating members embedded in the openings to insulate the base table from the lead pins. At least parts of the insulating members which are located on an accommodation space side are made of a first insulating material containing no Si—O bond. | 04-16-2015 |
| 20150117483 | SEMICONDUCTOR LASER DIODE HAVING AN ADJUSTABLE EMISSION WAVELENGTH - The invention relates to a semiconductor laser diode ( | 04-30-2015 |
| 20150124846 | LASERS WITH BEAM SHAPE AND BEAM DIRECTION MODIFICATION - A reflective surface is disclosed in conjunction with a semiconductor laser to shape a laser beam and modify a direction of the laser beam. The reflective surface may be formed on a structure disposed adjacent to a laser structure to allow high coupling of laser light to, for example, a silicon photonics chip or an optical fiber. | 05-07-2015 |
| 20150146755 | SEMICONDUCTOR LASER AND METHOD OF FABRICATING THE SAME - Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process. | 05-28-2015 |
| 20150303656 | SEMICONDUCTOR LASER APPARATUS - A semiconductor laser apparatus, including: a beam divergence angle correction optical system for correcting a divergence angle of beams generated from light emitting points of a semiconductor laser bar; a beam rotation optical system for rotating the beams each having the corrected divergence angle; a wavelength dispersion optical element having a wavelength dispersion function; and a partial reflection mirror. A relative position of the beam divergence angle correction optical system with respect to the light emitting point in a divergence angle correction direction is changed for each light emitting point. | 10-22-2015 |
| 20150305145 | JOINING METHODS FOR BULK METALLIC GLASSES - Bulk metallic glass having at least one surface: applying a contact layer to at least a portion of the at least one surface of the bulk metallic glass; applying a diffusion barrier layer to the contact layer; applying a cap layer to the diffusion barrier layer to form a layered bulk metallic glass; and joining a material to the layered bulk metallic glass. | 10-22-2015 |
| 20150318664 | LASER COMPONENT AND METHOD FOR ITS PRODUCTION - A laser component includes a housing and a laser chip arranged in the housing, wherein the housing includes a first soldering contact and a second soldering contact at a first outer surface, and a third soldering contact and a fourth soldering contact at a second outer surface, the first soldering contact connects to the third soldering contact in an electrically conductive manner and the second soldering contact connects to the fourth soldering contact in an electrically conductive manner, the housing includes a carrier substrate and a cover, a bottom side of the laser chip is arranged on the carrier substrate, the cover includes an encapsulation material, the laser chip is covered by the encapsulation material, and a beam direction of the laser chip is oriented in parallel to the bottom side of the laser chip. | 11-05-2015 |
| 20150325980 | LASER EMITTING APPARATUS AND MASTER OSCILLATOR POWER AMPLIFIER SYSTEM - There is provided a laser emitting apparatus including a semiconductor laser, a grating positioned relative to the semiconductor laser to form a resonator structure therebetween, and an optical system positioned between the semiconductor laser and the grating. The optical system is configured and arranged so that confocal points are formed on both a light emitting surface of the semiconductor laser and a reflection surface of the grating. | 11-12-2015 |
| 20150349487 | Method For Producing Semiconductor Laser Elements And Semi-Conductor Laser Element - Method for producing semiconductor laser elements ( | 12-03-2015 |
| 20150357793 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device comprising the steps of: growing a stacked semiconductor layer on a substrate, the stacked semiconductor layer including an active layer and a cladding layer; forming a mesa structure by etching the stacked semiconductor layer, the mesa structure extending in a [011] direction; and forming a buried layer of Fe-doped InP on the side surface of the mesa structure in a reactor of an organo-metallic vapor phase epitaxy apparatus while supplying a hydrogen chloride gas into the reactor. In the step of forming the buried layer, the hydrogen chloride gas is supplied from the beginning of forming the buried layer. The buried layer has a first region and a second region. The first region has a front surface of a (311)B plane. The second region is formed on the front surface. The Fe concentration of the first region is higher than that of the second region. | 12-10-2015 |
| 20150372198 | LIGHT EMITTING MODULE - A light emitting module includes a semiconductor light emitting element, an optical wavelength conversion member configured to convert the wavelength of element light emitted from the semiconductor light emitting element and to emit converted light, having a color different from the element light, a transmitting member disposed between the semiconductor light emitting element and the optical wavelength conversion member and configured to allow the element light to be transmitted therethrough, the transmitting member being made of a thermal conductive material that transfers the heat generated from the optical wavelength conversion member to the outside, and a transparent adhesive bonding the optical wavelength conversion member and the transmitting member to each other, the adhesive having a thickness of 2.0 μm or less. | 12-24-2015 |
| 20150372450 | FLIP CHIP TYPE LASER DIODE AND FLIP CHIP TYPE LASER DIODE PACKAGE STRCTURE - A flip chip type laser diode includes a first substrate, a first semiconductor layer disposed on the first substrate, an emitting layer disposed on one part of the first semiconductor layer, a second semiconductor layer disposed on the emitting layer and forming a ridge mesa, a current conducting layer disposed on another part of the first semiconductor layer, a patterned insulating layer covering the second semiconductor layer and the current conducting layer and including a first zone and a second zone which respectively expose a part of the current conducting layer and a part of the second semiconductor layer, a first electrode and a second electrode respectively disposed on the first zone and the second zone. A projection of the ridge mesa projected to the first substrate covers a part of projections of the first electrode and the second electrode projected to the first substrate. | 12-24-2015 |
| 20160056607 | LASER COMPONENT AND METHOD FOR THE PRODUCTION THEREOF - A laser component includes a carrier having a lens carrier surface and a chip carrier surface raised relative to the lens carrier surface, wherein an optical lens is arranged on the lens carrier surface, a laser chip is arranged on the chip carrier surface, the chip carrier surface and the lens carrier surface are formed by materially uniformly continuous sections of the carrier, the carrier includes a plastic material, and the laser component is configured as a surface-mountable SMD component. | 02-25-2016 |
| 20160072252 | Semiconductor Lasers - A semiconductor laser comprises a semiconductor laser chip, a conductive mount, an insulation block, and an electrode. The semiconductor laser chip and the insulation block are bonded to a surface of the conductive mount, and an upper surface of the electrode and the semiconductor laser chip are electrically connected. The thickness of the electrode is no less than 0.3 mm. | 03-10-2016 |
| 20160072257 | SEMICONDUCTOR LASER ELEMENT, METHODS OF MANUFACTURING THE SAME AND SEMICONDUCTOR LASER DEVICE - A method of manufacturing a plurality of semiconductor laser elements having; preparing the semiconductor wafer; forming grooves that extend along second lines on a first main surface side of the semiconductor wafer, and forming a first texture pattern along second lines on a bottom surface of the grooves, the second lines being parallel to a cavity length direction; forming a second texture pattern along the second lines by covering at least part of the first texture pattern with a protective film; and splitting the semiconductor wafer along first lines, the first lines being parallel to a cavity width direction, and splitting along the second lines using a second main surface, which is an opposite side of the first main surface, of the semiconductor wafer as an origin. | 03-10-2016 |
| 20160079733 | Laser Light Source - A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation. | 03-17-2016 |
| 20160079734 | Laser Light Source - A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material. | 03-17-2016 |
| 20160087150 | LIGHT-EMITTING ASSEMBLY HAVING A SEMICONDUCTOR LAYER SEQUENCE HAVING AN ACTIVE ZONE ON A COLUMNAR STRUCTURE - An assembly has a columnar structure arranged with one end on a substrate, wherein the structure is at least partly covered with a semiconductor layer structure having an active zone that generates electromagnetic radiation, the active zone has a band gap for a radiative recombination, and the band gap decreases along a longitudinal axis of the structure in a direction of a free end of the structure such that a diffusion of charge carriers in the direction of the free end of the structure and a radiative recombination of charge carrier pairs in the region of the free end of the structure are supported. | 03-24-2016 |
| 20160087404 | Laser Light Source - A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate. | 03-24-2016 |
| 20160087406 | White light illuminant comprising quantum dot lasers and phosphors - A laser-based white light illuminant comprises a III-nitride quantum dot laser diode and phosphors that convert the emitted laser light into white light. The laser light is emitted from an active region comprised of small quantum dots having a narrow size distribution, thereby providing narrower linewidths, decreased operating current density and increased peak efficiency. The white light illuminant has a number of advantages of LED-based solid state lighting, including higher power conversion efficiency, higher achievable luminous efficacy, and new and improved functionality. | 03-24-2016 |
| 20160091171 | OPTICAL COMPONENT AND ITS METHOD OF MANUFACTURE, AND LIGHT EMITTING DEVICE AND ITS MEHTOD OF MANUFACTURE - An optical component includes a support member having a through-hole, a second light-transmissive member disposed inside the through-hole, and having a light incidence face, a light emission face and an outer peripheral side surface, and an outer peripheral side surface, a fused first light-transmissive member formed between an inner wall of the through-hole and the outer peripheral side surface of the second light-transmissive member. | 03-31-2016 |
| 20160111393 | Solderless Mounting for Semiconductor Lasers - A first contact surface of a semiconductor laser chip can be formed to a first target surface roughness and a second contact surface of a carrier mounting can be formed to a second target surface roughness. A first bond preparation layer comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer comprising a second metal can optionally be applied to the formed second contact surface. The first contact surface can be contacted with the second contact surface, and a solderless securing process can secure the semiconductor laser chip to the carrier mounting. Related systems, methods, articles of manufacture, and the like are also described. | 04-21-2016 |
| 20160118767 | SUBMOUNT AND MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - The method includes the steps of: preparing a single crystal SiC including an upper surface | 04-28-2016 |
| 20160126701 | SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF - In a semiconductor laser, a block layer is provided on both sides of a mesa-type semiconductor part having an n-type cladding layer, an active layer, and a p-type cladding layer. The block layer has: a p-type block layer formed on the side surface of the mesa-type semiconductor part and over a p-type semiconductor substrate; a high-resistance layer formed over the p-type block layer; and an n-type block layer formed over the high-resistance layer, which has a higher resistance than that of the p-type block layer. By providing the high-resistance layer between the p-type block layer and the n-type block layer, the thickness of the p-type block layer can be controlled and a leakage current (flow of a hole) can be reduced. Further, the distance between the n-type cladding layer and the n-type block layer can be secured, and hence a leakage current (flow of an electron) can be prevented. | 05-05-2016 |
| 20160126702 | LIGHT-EMITTING ASSEMBLY HAVING A CARRIER - An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer. | 05-05-2016 |
| 20160156155 | STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER | 06-02-2016 |
| 20160181764 | HIGH BRIGHTNESS MULTIJUNCTION DIODE STACKING | 06-23-2016 |
| 20160204573 | LASER COMPONENT AND METHOD OF PRODUCING A LASER COMPONENT | 07-14-2016 |
| 20160204574 | OPTOELECTRONIC COMPONENT, OPTOELECTRONIC DEVICE AND METHOD OF PRODUCING AN OPTOELECTRONIC DEVICE | 07-14-2016 |
| 20190148909 | OPTICAL MEMBER HOLDING DEVICE, SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING OPTICAL MEMBER HOLDING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE | 05-16-2019 |
| 20190148916 | SEMICONDUCTOR LASER DEVICE, SEMICONDUCTOR LASER MODULE, AND LASER LIGHT SOURCE SYSTEM FOR WELDING | 05-16-2019 |
| 20220140570 | VERTICAL CAVITY SURFACE EMITTING DEVICE - A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer film reflecting mirror, the light-emitting structure layer including a light-emitting layer; and a second multilayer film reflecting mirror formed on the light-emitting structure layer, the second multilayer film reflecting mirror constituting a resonator between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror. The light-emitting structure layer has a high resistance region and a low resistance region having an electrical resistance lower than an electrical resistance of the high resistance region. The low resistance region has a plurality of partial regions arranged into a ring shape while being separated by the high resistance region in a plane of the light-emitting structure layer. | 05-05-2022 |
