| Entries |
| Document | Title | Date |
|---|
| 20080232026 | THIN FILM CAPACITOR AND METHODS OF MAKING SAME - A thin film capacitor and methods of making the capacitor are provided. The capacitor includes a first and a second conductive layer and a dielectric layer disposed therebetween. The dielectric layer includes a first polymer and a second polymer cross-linked to the first polymer. The capacitor may be made by forming a layer comprising a dielectric material including first and second polymers, each polymer capable of being cross-linked, and irradiating the layer to cross-link the first and second polymers and form the dielectric layer. | 09-25-2008 |
| 20080232027 | SOLID ELECTROLYTIC CAPACITOR - Cathode electrode part | 09-25-2008 |
| 20080259523 | Capacitor and manufacturing method thereof - A capacitor and a method of manufacturing the capacitor are disclosed. The capacitor may include a board, a polymer layer formed on one side of the board, a circuit pattern selectively formed over the polymer layer, and a titania nanosheet corresponding with the circuit pattern. Embodiments of the invention can provide flatness in the board, and allows the copper of the board to maintain its functionality as an electrode while increasing the adhesion to the titania nanosheet. The titania nanosheet may thus be implemented on a patterned board in a desired shape, number of layers, and thickness. | 10-23-2008 |
| 20080316674 | Capacitors and methods for fabricating the same - Capacitors and methods for fabricating the same are provided. An exemplary embodiment of a capacitor comprises a dielectric layer and a first conductive layer thereover. A supporting rib is embedded in the first conductive layer and extends along a first direction. A second conductive layer is embedded in the first conductive layer and extends along a second direction perpendicular with the first direction, wherein a portion of the second conductive layer forms across the supporting rib and is structurally supported by the supporting rib. A capacitor layer is formed between the first and second conductive layers to electrically insulate the first and second conductive layers. | 12-25-2008 |
| 20080316675 | METHOD FOR PRODUCING A DIELECTRIC INTERLAYER AND STORAGE CAPACITOR WITH SUCH A DIELECTRIC INTERLAYER - A dielectric interlayer, especially for a storage capacitor, is formed from a layer sequence subjected to a temperature process, wherein the layer sequence has at least a first metal oxide layer and a second metal oxide layer formed by completely oxidizing a metal nitride layer to higher valency. | 12-25-2008 |
| 20090002918 | MULTILAYER CAPACITOR - A multilayer capacitor includes a capacitor body in which internal electrodes in a first internal electrode group are overlapped with internal electrodes in a second internal electrode group with dielectric layers sandwiched therebetween. A first external electrode has a first wraparound portion and a second wraparound portion, and a second external electrode has a third wraparound portion and a fourth wraparound portion. The volume proportions of the effective layers in a first area sandwiched between the first wraparound portion and the second wraparound portion and in a third area sandwiched between the third wraparound portion and the fourth wraparound portion are set to at least about 10%. The volume proportions of the effective layers in a second area toward a lower surface in the first area and in a fourth area toward the lower surface in the third area are set to about 15% or less. The external dimensions of the multilayer capacitor | 01-01-2009 |
| 20090002919 | Organic branched and hyperbranched systems for high dielectric and capacitance applications - An organic dielectric material comprises a branched and/or hyperbranched macromolecule having delocalized electrons. Such macro-molecular organic material systems have desirable delocalized charge and optionally one or more micro-crystalline regions. Organic dielectric materials include, for example, branched polyanilines and phthalocyanines. Delocalized excitations within the macromolecular framework of the organic dielectric material may be used in various applications, such as light harvesting, nonlinear optical, quantum optical, and electronic applications, e.g., capacitors. Electrical devices may comprise such dielectric materials, including capacitors that have very high energy density, storage, and transfer. Also provided are methods of preparing such materials. | 01-01-2009 |
| 20090034156 | COMPOSITE SHEET - Composite materials for the formation of printed circuit boards and electronic devices. A composite structure of the invention includes an electrically conductive layer and a dielectric layer. The dielectric layer includes a plurality of adjacent dielectric material patches arranged in a patchwork configuration, which patches are made up of different dielectric materials to thereby result in areas of differential capacitance. | 02-05-2009 |
| 20090091876 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a dielectric film, the dielectric film being placed in between the lower electrode and the upper electrode, the lower electrode including a noble metal film, and a plurality of conductive oxide films formed in an islands arrangement on the noble metal film. | 04-09-2009 |
| 20090116169 | Alpha Tantalum Capacitor Plate - A method for forming an alpha-tantalum layer comprising disposing a nitrogen containing base layer on a semiconductor substrate, bombarding the nitrogen containing base layer with a bombarding element, thereby forming an alpha-tantalum seed layer, and sputtering a layer of tantalum on the alpha-tantalum seed layer, thereby forming a surface layer of substantially alpha-tantalum. | 05-07-2009 |
| 20090141424 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a capacitor plate includes a plurality of first parallel conductive members, and a plurality of second parallel conductive members disposed over the plurality of first parallel conductive members. A first base member is coupled to an end of the plurality of first parallel conductive members, and a second base member is coupled to an end of the plurality of second parallel conductive members. A connecting member is disposed between the plurality of first parallel conductive members and the plurality of second parallel conductive members, wherein the connecting member includes at least one elongated via. | 06-04-2009 |
| 20090168299 | METHOD FOR THE PRODUCTION OF A COATING OF A POROUS, ELECTRICALLY CONDUCTIVE SUPPORT MATERIAL WITH A DIELECTRIC, AND PRODUCTION OF CAPACITORS HAVING HIGH CAPACITY DENSITY WITH THE AID OF SAID METHOD - The present invention relates to a method for producing a coating of a porous, electrically conductive substrate material with a dielectric by using a solution of precursor compounds of the dielectric with a concentration of less than 10 wt. %, expressed in terms of the contribution of the dielectric to the total weight of the solution, and to the production of capacitors using this method. | 07-02-2009 |
| 20090219670 | ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating an electronic device includes selectively forming a glass layer on a ceramic substrate by printing, baking the glass layer, and forming a capacitor on the glass layer, the capacitor including metal electrodes and a dielectric layer interposed between the metal electrodes. | 09-03-2009 |
| 20090244808 | THIN-FILM CAPACITOR - An object of the present invention is to restrain warpage in a thin-film trench capacitor. A thin-film capacitor includes a substrate, a dielectric film, and a pair of electrodes, and the dielectric film is provided along a concave-convex surface on which are formed a plurality of convex portions extending away from the substrate. The concave-convex surface forms a pattern having one or more divisions arranged in a plane parallel to the main plane of the substrate, and the convex portions are arranged in either parts of the divisions or other parts. At least some of the divisions have parts extending along the x axial direction, and two or more of the extending parts overlap each other and terminate at locations that are different from each other, as viewed from the y axial direction orthogonal to the x axial direction. | 10-01-2009 |
| 20090251848 | DESIGN STRUCTURE FOR METAL-INSULATOR-METAL CAPACITOR USING VIA AS TOP PLATE AND METHOD FOR FORMING - A design structure for a metal-insulator-metal (MIM) capacitor using a via as a top plate and method for forming is described. In one embodiment, the MIM capacitor structure comprises a bottom plate and a capacitor dielectric layer formed on the bottom plate and at least one via formed on the capacitor dielectric layer. The at least one via provides a top plate of the MIM capacitor. | 10-08-2009 |
| 20090257170 | Method for Forming a Ruthenium Film - Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided. | 10-15-2009 |
| 20090296313 | CAPACITOR STRUCTURE AND METAL LAYER LAYOUT THEREOF - A capacitor structure includes: a first metal layer including: a first frame structure including a first main frame and at least a first frame strip coupled to the first main frame for separating the first main frame to a plurality of first frame sections; and a plurality of first strips, each of the plurality of first strips positioned and isolated in one of the plurality of first frame sections; a second metal layer including: a second frame structure including a second main frame and at least a second frame strip coupled to the second main frame for separating the second main frame to a plurality of second frame sections; and a plurality of second strips, each of the plurality of second strips positioned and isolated in one of the plurality of second frame sections; and a dielectric layer, formed between the first metal layer and the second metal layer. | 12-03-2009 |
| 20090316331 | MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE HAVING MIM CAPACITOR, AND SEMICONDUCTOR DEVICE - A first electrode film containing TiAlN and a main dielectric film containing tantalum oxide are formed over a semiconductor substrate. Anneal is performed in the state that the first electrode film and the main dielectric film are formed, to react aluminum (Al) in the first electrode film with oxygen (O) in the main dielectric film and form a subsidiary dielectric film containing aluminum oxide at an interface between the first electrode film and the main dielectric film. A second electrode film is formed facing the first electrode film via the main dielectric film and the subsidiary dielectric film. | 12-24-2009 |
| 20090316332 | SEMICONDUCTOR DEVICE CONTAINING THIN FILM CAPACITOR AND MANUFACTURE METHOD FOR THIN FILM CAPACITOR - A thin film capacitor is disposed over a semiconductor substrate. The thin film capacitor includes a lower electrode at least an upper surface of which is made of amorphous or microcrystalline metal, a dielectric film disposed over the lower electrode, and an upper electrode disposed over the dielectric film. | 12-24-2009 |
| 20090316333 | METHOD FOR MANUFACTURING CAPACITOR, AND CAPACITOR - A method for manufacturing a capacitor, includes: accelerating conductor particles by ejecting the conductor particles together with gas, each surface of the conductor particles covered with a dielectric entirely; fixing the conductor particles to a substrate with the surface of the conductor particles still covered with the dielectric entirely by colliding the conductor particles with the substrate; and sandwiching a deposited film formed of the conductor particles fixed to the substrate between electrodes. | 12-24-2009 |
| 20100020468 | HIGH TEMPERATURE FILM CAPACITOR - A capacitor comprises a substrate layer, a first electrode layer disposed on the substrate layer, and a first dielectric layer disposed on the electrode layer. The dielectric layer comprises a polymeric material having an elongation less than or equal to about 5 percent. | 01-28-2010 |
| 20100079926 | FILM CAPACITOR - A capacitor comprises a substrate layer, a first electrode layer disposed on the substrate layer, and a first dielectric layer disposed on the electrode layer. The dielectric layer comprises inorganic ferroelectric or antiferroelectric particles, and a polymeric material having an elongation less than or equal to about 5 percent. | 04-01-2010 |
| 20100110607 | Vertical capacitors and method of fabricating same - A fabrication method which forms vertical capacitors in a substrate. The method is preferably an all-dry process, comprising forming a through-substrate via hole in the substrate, depositing a first conductive material layer into the via hole using atomic layer deposition (ALD) such that it is electrically continuous across the length of the via hole, depositing an electrically insulating, continuous and substantially conformal isolation material layer over the first conductive layer using ALD, and depositing a second conductive material layer over the isolation material layer using ALD such that it is electrically continuous across the length of the via hole. The layers are arranged such that they form a vertical capacitor. The present method may be successfully practiced at temperatures of less than 200° C., thereby avoiding damage to circuitry residing on the substrate that might otherwise occur. | 05-06-2010 |
| 20100134952 | Capacitor device and method of manufacturing the same - A method of manufacturing a capacitor device of the present invention, includes the steps of, forming an insulating layer on a substrate, forming a recess portion in the insulating layer by an imprinting process, forming a lower electrode by filling a metal layer in the recess portion in the insulating layer, forming a photosensitive dielectric layer on the lower electrode, forming an upper electrode on the dielectric layer, and forming a dielectric layer pattern under the upper electrode by exposing/developing the dielectric layer while using the upper electrode as a mask. | 06-03-2010 |
| 20100142119 | CAPACITOR STRUCTURE - A capacitor structure includes: a first electrode configured to include a plurality of openings; a second electrode formed in each center of the openings; and a dielectric layer formed to surround the second electrode and fill the openings of the first electrode. | 06-10-2010 |
| 20100226067 | Dielectric element and method for producing the dielectric element - Provided is a dielectric element comprising a dielectric thin film formed of a layer of perovskite nanosheets. The dielectric element has the advantages of inherent properties and high-level texture and structure controllability of the perovskite nanosheets, therefore realizing both a high dielectric constant and good insulating properties in a nano-region. | 09-09-2010 |
| 20100277852 | DIELECTRIC COATINGS AND USE IN CAPACITORS - A coated substrate product is described comprising a substrate and a dielectric coating material comprising carbon, hydrogen, silicon, and oxygen. According to the method, the substrate is processed by plasma cleaning the surface and then depositing a dielectric coating by a suitable plasma process. The coating may contain one or more layers. The substrate may be a rigid material or a thin film or foil. The coated products of this invention have superior dielectric material properties and utility as substrates for the manufacture of rolled or parallel plate capacitors with high energy densities. | 11-04-2010 |
| 20100296225 | Tunable Capacitors - The present invention relates to tunable capacitors, devices including tunable capacitors, and methods of making and using tunable capacitors and devices. One or more secondary tunable capacitors can be connected to a primary capacitor by printing a connector conducting layer or feature to obtain a desired net capacitance. Digitally printing the connector conducting layer allows the number of secondary capacitors connected into the circuit to be determined during the integrated circuit fabrication process, without the need for individual masks connecting the appropriate number of secondary capacitors. This provides an in-process or post-process trimming method to obtain the desired precision and accuracy for capacitors. Various sizes and combinations of secondary capacitors can be connected to obtain high precision capacitors and/or improved matching of capacitance values. | 11-25-2010 |
| 20100315759 | HELICAL CAPACITOR AND MANUFACTURING METHOD THEREOF - [Problem to be Solved] To provide a helical capacitor for controlling a high-frequency power which flows in power lines, and a manufacturing method of the helical capacitor. | 12-16-2010 |
| 20110013340 | CAPACITOR AND METHOD OF MANUFACTURING THE SAME - A capacitor includes a dielectric substrate and a large number of filamentous conductors formed to penetrate through the dielectric substrate in a thickness direction thereof. An electrode is connected to only respective one ends of a plurality of filamentous conductors constituting one of groups each composed of a plurality of filamentous conductors. The electrode is disposed in at least one position on each of both surfaces of the dielectric substrate, or in at least two positions on one of the surfaces. Further, an insulating layer is formed on each of both surfaces of the dielectric substrate so as to cover regions between the electrodes, and a conductor layer is formed on the corresponding insulating layer integrally with a desired number of electrodes. | 01-20-2011 |
| 20110038095 | CONDUCTIVE COMPOSITION AND PRODUCTION METHOD THEREOF, ANTISTATIC COATING MATERIAL, ANTISTATIC COATING, ANTISTATIC FILM, OPTICAL FILTER, AND OPTICAL INFORMATION RECORDING MEDIUM, AND CAPACITORS AND PRODUCTION METHOD THEREOF - A conductive composition comprises a π conjugated conductive polymer, a polyanion, and a hydroxy group-containing aromatic compound containing two or more hydroxy groups. An antistatic coating material comprises the conductive composition and a solvent. An antistatic coating is produced by applying the antistatic coating material. A capacitor comprises an anode composed of a porous valve metal body; a dielectric layer formed by oxidizing a surface of the anode; and a cathode formed on the dielectric layer, wherein the cathode has a solid electrolyte layer comprising the conductive composition. | 02-17-2011 |
| 20110051313 | MAGNETICALLY ENHANCED CAPACITANCE FOR HIGH PERFORMANCE THIN FILM CAPACITORS - A capacitor is disclosed. The capacitor includes a magnetic layer, a first dielectric layer, a second dielectric layer, a first conductive layer and a second conductive layer. The magnetic layer is capable of generating a magnetic field, and is disposed between the first dielectric layer and the second dielectric layer. The first conductive layer is disposed below the first dielectric layer, and second conductive layer is disposed above the second dielectric layer, wherein both the first and the second conductive layer are non-magnetic. | 03-03-2011 |
| 20110075320 | Dielectric Film, Associated Article and Method - An article having a cyanoresin dielectric film is described. The cyanoresin dielectric film includes nanostructures of a toughening material. A method of forming such a cyanoresin dielectric film is also described. A capacitor having a cyanoresin dielectric film is presented. | 03-31-2011 |
| 20110102970 | MONOMERS OF SELECTED COLOUR NUMBERS AND CAPACITORS PREPARED THEREFROM - The present invention relates to a monomer having the general formula (I) | 05-05-2011 |
| 20110110015 | Methods to improve the efficiency and reduce the energy losses in high energy density capacitor films and articles comprising the same - A multilayer film useful for capacitive applications comprises a high energy density layer and a dielectric blocking layer. In some embodiments, a conducting film is located between the high energy density layer and the blocking layer. The high energy density layer may be a fluoropolymer, such as a polymer or copolymer of poly-1,1-difluoroethene or a derivative thereof. The multilayer film may have high energy density (for example,. >8 J/cm | 05-12-2011 |
| 20110110016 | THIN-FILM CAPACITOR - A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part. | 05-12-2011 |
| 20110181999 | MULTI LAYER CHIP CAPACITOR, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME - The present invention carries out the vacuum deposition by setting a deposition angle between a single mask set including a shadow mask having a plurality of slits and a deposition source to form a lower terminal layer, a dielectric layer, an inner electrode layer, and an upper terminal layer at once under a vacuum state generated once, or adjusts slit patterns by relatively moving upper and lower mask sets that respectively include shadow masks having a plurality of slits and face each other to form a lower terminal layer, a dielectric layer, an inner electrode layer, and an upper terminal layer at once under a vacuum state generated once. | 07-28-2011 |
| 20110216470 | ELECTRODE FOIL AND CAPACITOR USING THE SAME - An electrode foil includes a substrate made of metal and a rough layer disposed on a surface of the substrate and including plural fine metallic particles. The rough layer includes a lower layer, an intermediate layer which is disposed on the lower layer and is more distanced from the substrate than the lower layer is, and an upper layer which is disposed on the intermediate layer and is more distanced from the substrate than the intermediate layer is. The mode of diameters of fine particles in the intermediate layer is greater than the mode of diameters of the fine particles in the upper and lower layers. This electrode foil provides a capacitor having a small leakage current. | 09-08-2011 |
| 20110228442 | CAPACITOR HAVING HIGH TEMPERATURE STABILITY, HIGH DIELECTRIC CONSTANT, LOW DIELECTRIC LOSS, AND LOW LEAKAGE CURRENT - Examples of the present invention include high electric energy density polymer film capacitors with high dielectric constant, low dielectric dissipation tangent, and low leakage current in a broad temperature range. More particularly, examples include a polymer film capacitor in which the dielectric layer comprise a copolymer of a first monomer (such as tetrafluoroethylene) and a second polar monomer. The second monomer component may be selected from vinylidene fluoride, trifluoroethylene or their mixtures, and optionally other monomers may be included to adjust the mechanical performance. The capacitors can be made by winding metallized films, plain films with metal foils, or hybrid construction where the films comprise the new compositions. The capacitors can be used in DC bus capacitors and energy storage capacitors in pulsed power systems. | 09-22-2011 |
| 20110242726 | ENERGY STORAGE DEVICE - An energy storage device is disclosed in the invention. The energy storage device includes a first electrode, a second electrode, a dielectric layer and a magnetic portion or a magnetic material. The dielectric layer is disposed between the first electrode and the second electrode. The dielectric layer cooperates with the first electrode and the second electrode for achieving the capacitance effect, such that a plurality of positive charges and a plurality of negative charges are accumulated on the first electrode and the second electrode. The magnetic portion or the magnetic material is used for establishing a magnetic field. The magnetic field passes through the first electrode, the dielectric layer and the second electrode. | 10-06-2011 |
| 20110242727 | CAPACITOR - A capacitor may include a lower electrode structure, a dielectric layer and an upper electrode structure. The lower electrode structure may include a first lower pattern, a first deformation-preventing layer pattern and a second lower pattern. The first lower pattern may have a cylindrical shape. The first deformation-preventing layer pattern may be formed on an inner surface of the first lower pattern. The second lower pattern may be formed on the first deformation-preventing layer pattern. The dielectric layer may be formed on the lower electrode structure. The upper electrode structure may be formed on the dielectric layer. Thus, the capacitor may have a high capacitance and improved electrical characteristics. | 10-06-2011 |
| 20110255210 | FILM FOR FILM CAPACITOR AND FILM CAPACITOR - There is provided a thin highly dielectric film for a film capacitor being excellent in mechanical strength, in which highly dielectric inorganic particles can be blended to a dielectric resin at high ratio, and rubber particles (B) and preferably highly dielectric inorganic particles (C) are dispersed in a thermoplastic resin (A). | 10-20-2011 |
| 20110255211 | HIGHLY DIELECTRIC FILM - There is provided a highly dielectric film which has high dielectric property, can be formed into a think film and is excellent in winding property (flexibility). The highly dielectric film comprises (A) a vinylidene fluoride polymer, (B) barium titanate oxide particles and/or lead zirconium titanate oxide particles, and (C) an affinity improving agent, wherein the barium titanate oxide particles and/or lead zirconium titanate oxide particles (B) and the affinity improving agent (C) are contained in amounts of 10 to 500 parts by mass and 0.01 to 30 parts by mass, respectively based on 100 parts by mass of the vinylidene fluoride polymer (A). | 10-20-2011 |
| 20110292566 | CYANORESIN POLYMER FOR DIELECTRIC FILM, PROCESS OF MAKING AND ASSOCIATED ARTICLE - A cyanoresin polymer is described, wherein about 10 percent to about 60 percent of the side chains on the polymer include a cyano group; and substantially all of the remaining polymer side chains include a hydroxyl group. A method of forming such a cyanoresin polymer is described. A capacitor having a dielectric film including such a cyanoresin polymer is also presented. | 12-01-2011 |
| 20110310527 | DIELECTRIC RESIN COMPOSITION FOR FILM CAPACITOR, METHOD FOR PRODUCING THE SAME, AND FILM CAPACITOR - To increase the heat resistance of a film capacitor, a cured article obtained by curing a mixed solution of a polyvinyl acetal having a hydroxyl group content of 10% to 38% by weight, the number of backbone carbon atoms of the polyvinyl acetal being 100 or more, and a polyisocyanate having an isocyanate content of 1% to 50% by weight is used as a dielectric resin films material arranged between first and second counter electrodes facing each other. At least the polyvinyl acetal is subjected to high-pressure homogenization in which a shearing force is applied such that a pressure applied to the polyvinyl acetal is 50 MPa or more when the material is passed through a path having a diameter of 0.125 mm and a length of 5 mm, so that the solubility is increased to allow a curing reaction to proceed uniformly. The cured article has a glass transition temperature of 130° C. or higher and a breakdown voltage of 350 V/μm or more. | 12-22-2011 |
| 20120008252 | DIELECTRIC PASTE HAVING A LOW DIELECTRIC LOSS, METHOD OF MANUFACTURE THEREOF AND AN ARTICLE THAT USES THE SAME - A dielectric paste having low dielectric loss is disclosed. The dielectric paste includes (A) a thermosetting resin; (B) an acid anhydride-based curing agent; (C) high dielectric constant particles; (D) an amine-based catalyst; and (E) a material for forming a salt with the amine-based catalyst (D). In the dielectric paste, the material (E) for forming a salt with the amine-based catalyst (D) is used so that the catalyst may be introduced in the form of a salt thus preventing the catalyst from binding with the high dielectric constant particles, thereby prohibiting the poisoning of the catalyst. | 01-12-2012 |
| 20120019980 | PILLAR TYPE CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed over the upper portion of the dielectric film. | 01-26-2012 |
| 20120057270 | CAPACITOR AND METHOD FOR MAKING SAME - One or more embodiments relate to a capacitor, comprising: a first electrode comprising a first layer including tantalum nitride, and a second layer including alpha-tantalum overlying the first layer; a dielectric layer; and a second electrode overlying the dielectric layer, the second electrode comprising a first layer including tantalum nitride, and a second layer including alpha-tantalum overlying the first layer. | 03-08-2012 |
| 20120069488 | METHOD AND APPARATUS FOR MICROCONTACT PRINTING OF MEMS - The embodiments disclosed herein are directed to fabrication methods useful for creating MEMS via microcontact printing by using small organic molecule release layers. The disclose method enables transfer of a continuous metal film onto a discontinuous platform to form a variable capacitor array. The variable capacitor array can produce mechanical motion under the application of a voltage. The methods disclosed herein eliminate masking and other traditional MEMS fabrication methodology. The methods disclosed herein can be used to form a substantially transparent MEMS having a PDMS layer interposed between an electrode and a graphene diaphragm. | 03-22-2012 |
| 20120113561 | CAPACITOR DEVICE AND METHOD FOR FORMING THE SAME - The present invention related to a method for forming a capacitor device, comprising steps of: providing a substrate, forming a first metal layer on the substrate, forming a dielectric on the first metal layer, applying a laser-annealing to the dielectric, and forming a second metal layer on the dielectric. | 05-10-2012 |
| 20120147520 | CAPACITOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A capacitor structure and a manufacturing method thereof. The capacitor structure includes a first conductor layer, a dielectric layer and a second conductor layer. The first conductor layer has a first metal material and a second metal material. The first metal material is formed with voids and the second metal material is filled in the voids via hot melt. Accordingly, in the first conductor layer, the second metal material is filled into the voids of the first metal material by means of hot melt to bond with the first metal material. In this case, the thermal treatment temperature can be effectively lowered and the electrical conductivity of the capacitor structure can be increased. Also, the strength of the capacitor structure is increased. | 06-14-2012 |
| 20120162857 | SUBSTRATE WITH EMBEDDED PATTERNED CAPACITANCE - A process for forming a laminate with capacitance and the laminate formed thereby. The process includes the steps of providing a substrate and laminating a conductive foil on the substrate wherein the foil has a dielectric. A conductive layer is formed on the dielectric. The conductive foil is treated to electrically isolate a region of conductive foil containing the conductive layer from additional conductive foil. A cathodic conductive couple is made between the conductive layer and a cathode trace and an anodic conductive couple is made between the conductive foil and an anode trace. | 06-28-2012 |
| 20120200984 | METHOD FOR MANUFACTURING A TIN/TA2O5/TIN CAPACITOR - A method for manufacturing a TiN/Ta | 08-09-2012 |
| 20120218679 | METALLIZED FILM CAPACITOR AND CASE MOLD TYPE CAPACITOR INCLUDING SAME - A metallized film capacitor includes a dielectric film and two metal vapor-deposition electrodes facing each other across the dielectric film. At least one of the metal vapor-deposition electrodes is made of substantially only aluminum and magnesium. This metallized film capacitor has superior leak current characteristics and moisture resistant performances, and can be used for forming a case mold type capacitor with a small size. | 08-30-2012 |
| 20120224297 | PROCESS OF FORMING DIELECTRIC THIN FILM AND THIN FILM CAPACITOR HAVING SAID DIELECTRIC THIN FILM - In this process of forming a dielectric thin film, when a dielectric thin film represented by Ba | 09-06-2012 |
| 20120236464 | CONDUCTIVE EMISSIONS PROTECTION - A multi-layer substrate includes a ground structure, a plurality of dielectric layers on the ground structure and a plurality of conductive layers separating the plurality of dielectric layers. The conductive layers include a first conductive layer and a second conductive layer and a connection electrically coupling the first conductive layer and the second conductive layer. The first conductive layer and the ground structure are configured to define a first parasitic capacitance there between and the first conductive layer and the second conductive layer are configured to define a second, negating parasitic capacitance there between. | 09-20-2012 |
| 20120327552 | Interactive Electrostatic Field High Energy Storage AC Blocking Capacitor - A interactive electrostatic field high energy storage AC blocking capacitor in which a first a first embodiment of the invention comprises a charging plate in the form of an active interactive electrostatic field charging plate | 12-27-2012 |
| 20130070388 | CAPACITOR ELEMENT AND CAPACITOR DEVICE HAVING THE SAME - A capacitor forming unit includes a dielectric plate, a first conductor film formed on a plate upper surface region other than front and rear end portions, a first insulator film formed on the upper surface front end portion, a second insulator film formed on the upper surface rear end portion, a second conductor film formed on a plate lower surface region other than front and rear end portion, a third insulator film formed on the front end portion lower surface, and a fourth insulator film formed on the lower surface rear end portion. One or more first electrode rods are disposed in through holes, and electrically connected to the first conductor film and electrically insulated from the second conductor film. One or more second electrode rods are disposed in other through holes, and electrically connected to the second conductor film and electrically insulated from the first conductor film. | 03-21-2013 |
| 20130088811 | Thin-Film Capacitor - A thin-film capacitor and a method for making the thin-film capacitor having a structure that can prevent vertical stress acting on outer connecting terminals, such as bumps, from concentrating on electrode layers, and capable of easily increasing the equivalent series resistance to a desired value. The thin-film capacitor includes a substrate, a capacitor unit disposed above the substrate and composed of at least one dielectric thin film and two electrode layers, a protective layer covering at least part of the capacitor unit, a lead conductor electrically connected to one of the electrode layers of the capacitor unit, and a bump disposed above the lead conductor. The lead conductor includes a connecting part disposed in an opening in the protective layer and electrically connected to one of the electrode layers of the capacitor unit, and a wiring part extending over the protective layer. The bump is disposed above the wiring part. | 04-11-2013 |
| 20130120904 | SUBSTRATE-INCORPORATED CAPACITOR, CAPACITOR-INCORPORATING SUBSTRATE PROVIDED WITH THE SAME, AND METHOD FOR MANUFACTURING SUBSTRATE-INCORPORATED CAPACITOR - A substrate-incorporated capacitor includes a first electrode extending in a predetermined direction, a dielectric layer arranged on part of the first electrode, a second electrode arranged on the dielectric layer and facing the first electrode through the dielectric layer, and an electrode layer arranged on the first electrode surrounding the dielectric layer and connected to the first electrode. Part of the electrode layer is arranged on an end of the dielectric layer and is spaced apart from the second electrode in the predetermined direction, and the part of the electrode layer faces the first electrode through the dielectric layer. | 05-16-2013 |
| 20130148262 | ELECTRICAL ENERGY STORAGE DEVICE - The invention provides a compact, electrical energy storage device which has large capacity and can produce a high electrical energy. In accordance with the electrical energy storage device of the invention, the electrical energy storage device | 06-13-2013 |
| 20130170096 | BIAXIALLY ORIENTED POLYPROPYLENE FILM, METALLIZED FILM, AND FILM CAPACITOR - A biaxially oriented polypropylene film has projections on both surfaces of the film, wherein the height of the most common projection (PhZ) among the projections on each surface is not less than 100 nm and less than 400 nm on both surfaces, and the number of projections per 0.1 mm | 07-04-2013 |
| 20130201605 | TWO-PARTICLE NANOCOMPOSITE DIELECTRICS - Technologies are generally described for a nanocomposite polymer dielectric that may incorporate two types of nanoparticles and a polymer. One of the two types of nanoparticle may be a first, smaller nanoparticle, that may occupy spaces between larger second nanoparticles. Another of the two types of nanoparticle may be the second, larger, “high-κ” nanoparticle, which supports the overall dielectric constant of the material. In an applied electric field, the first, smaller nanoparticle may redistribute local charge to homogenize electric fields in the dielectric material, tending to avoid the development of “hot spots”. Such a two-nanoparticle nanocomposite dielectric material may provide increased dielectric breakdown strength and voltage endurance in comparison with a nanoparticle dielectric which only contains a single type of “high-κ” nanoparticle. | 08-08-2013 |
| 20130242461 | MULTI LAYER CHIP CAPACITOR, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME - A method of manufacturing a multi-layer chip capacitor by depositing a dielectric layer and a conductor layer in the form of multi-layer chip, while a width of the conductor layer is narrower than a width of the dielectric layer including adjusting and setting a distance between a single shadow mask installed to a mask set to be rotated and revolved and having a plurality of slits, positioning a dielectric layer deposition source to be perpendicular to the single shadow mask and a conductor layer deposition source to be oblique to the single shadow mask, and forming the dielectric layer and the conductor layer in the vacuum deposition while controlling the mask set to move along the X-, Y-, and Z-axes (the X-axis is the width direction, the Y-axis is the longitudinal direction, and the Z-axis is the height direction). | 09-19-2013 |
| 20130258549 | PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME - A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, having an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation is controlled in a (111) plane preferentially in a range of 45 nm to 270 nm, and a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation as the crystal orientation of the orientation controlling layer, in which an interface is formed between the orientation controlling layer and the film thickness adjusting layer. | 10-03-2013 |
| 20130258550 | ELECTRICAL COMPONENTS FOR MICROELECTRONIC DEVICES AND METHODS OF FORMING THE SAME - Electrical components for microelectronic devices and methods for forming electrical components. One particular embodiment of such a method comprises depositing an underlying layer onto a workpiece, and forming a conductive layer on the underlying layer. The method can continue by disposing a dielectric layer on the conductive layer. The underlying layer is a material that causes the dielectric layer to have a higher dielectric constant than without the underlying layer being present under the conductive layer. For example, the underlying layer can impart a structure or another property to the film stack that causes an otherwise amorphous dielectric layer to crystallize without having to undergo a separate high temperature annealing process after disposing the dielectric layer onto the conductive layer. Several examples of this method are expected to be very useful for forming dielectric layers with high dielectric constants because they avoid using a separate high temperature annealing process. | 10-03-2013 |
| 20130329339 | CAPACITOR - A capacitor includes a dielectric layer, a first external electrode layer, a second external electrode layer, a first internal electrode portion, a second internal electrode portion, and an adsorbing portion. The first internal electrode portion is provided on a first through-hole portion, one end of the first internal electrode portion being connected to the first external electrode layer. The second internal electrode portion is provided on a second through-hole portion, one end of the second internal electrode portion being connected to the second external electrode layer. The adsorbing portion adsorbs the first external electrode layer and the second external electrode layer, the adsorbing portion being provided on a third through-hole portion. | 12-12-2013 |
| 20140063689 | DIELECTRIC MATERIAL TO ENHANCE CAPACITANCE OF A CAPACITOR - A dielectric material suitable for use between electrodes of a capacitor includes dipole-impregnated fullerenes able to increase a dielectric constant of the dielectric material in order to enhance the energy storage capacity of the capacitor is provided. The dielectric material includes buckminsterfullerenes each having a dipole molecule impregnated within the buckminsterfullerene, the dipole molecules within the buckminsterfullerenes able to rotate and align with forces of an electric field when in the presence of the electric field so that, when in use between the electrodes of the capacitor, they counteract the electric field between the electrodes and increase the energy storage capacity of the capacitor. | 03-06-2014 |
| 20140085771 | QUATERNARY DATA-STORAGE MATERIALS AND THE PREPARATION METHOD THEREOF - An organic compound has the following chemical structure: | 03-27-2014 |
| 20140218841 | LOW ACOUSTIC NOISE CAPACITORS - The described embodiments relate generally to a capacitor assembly for mounting on a printed circuit board (PCB) and more specifically to designs for mechanically isolating the capacitor assembly from the PCB to reduce an acoustic noise produced when the capacitor imparts a piezoelectric force on the PCB. Termination elements in the capacitor assembly, including a porous conductive layer in the capacitor assembly may reduce an amount of vibrational energy transferred from the capacitor to the PCB. Termination elements including a soft contact layer may also reduce the amount of vibrational energy transferred to the PCB. Further, capacitor assemblies having thickened dielectric material may reduce the amount of vibrational energy transferred to the PCB. | 08-07-2014 |
| 20140268491 | CAPACITORS USING POROUS ALUMINA STRUCTURES - Capacitors and methods of making the same are disclosed herein. In one embodiment, a capacitor comprises a structure having first and second oppositely facing surfaces and a plurality of pores each extending in a first direction from the first surface towards the second surface, and each having pore having insulating material extending along a wall of the pore; a first conductive portion comprising an electrically conductive material extending within at least some of the pores; and a second conductive portion comprising a region of the structure consisting essentially of aluminum surrounding individual pores of the plurality of pores, the second conductive portion electrically isolated from the first conductive portion by the insulating material extending along the walls of the pores. | 09-18-2014 |
| 20140293505 | PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF FORMING THE SAME - A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film. | 10-02-2014 |
| 20140293506 | GIANT DIELECTRIC CONSTANT MATERIAL - Disclosed herein is a material having formula (A | 10-02-2014 |
| 20140334064 | HIGH ASPECT RATIO OPENINGS - A capacitor forming method includes forming an electrically conductive support material over a substrate, with the support material containing at least 25 at % carbon. The method includes forming an opening through at least the support material where the opening has an aspect ratio of at least 20:1 within a thickness of the support material. After forming the opening, the method includes processing the support material to effect a reduction in conductivity, and forming a capacitor structure in the opening. | 11-13-2014 |
| 20140362493 | HIGHLY CROSSLINKED POLYMER DIELECTRIC FILMS FOR IMPROVED CAPACITOR PERFORMANCE - New polymeric dielectric materials are provided for high power capacitors, especially for mobile and weapons applications. These materials utilize aminoplast crosslinking in their polymeric structure. The aminoplast crosslinking ability of these materials allows them to be customized for a number of applications, but also allows the materials to have a higher crosslinking density, leading to higher dielectric constants, higher breakdown voltage, and higher thermal stability. These materials can be incorporated into current capacitor manufacturing schemes with little to no processing changes. | 12-11-2014 |
| 20150029638 | POLYIMIDES AS DIELECTRICS - Polyimides derived from a primary aromatic diamine and aromatic dianhydride mono-mer moieties, wherein one or more of said moieties contain at least one substituent on the aromatic ring selected from propyl and butyl, especially from isopropyl, isobutyl, tert.butyl, show good solubility and are well suitable as dielectric material in electronic devices such as capacitors and organic field effect transistors. | 01-29-2015 |
| 20150380163 | LAYERED CAPACITOR DEVICE WITH CHARGE BLOCKING LAYERS - A multi-layered capacitor device is provided in which the multi-layered capacitor device includes a metal or metal-oxide ground electrode, a capacitor dielectric layer, a metal or metal-oxide top electrode, a hole blocking layer and an electron blocking layer . The hole blocking layer is located at the interface of the metal or metal-oxide ground electrode and the capacitor dielectric layer to increases the effective barrier height at the interface. The electron blocking layer is located at the interface of the metal or metal-oxide top electrode and the capacitor dielectric layer to increases the effective barrier height at the interface. | 12-31-2015 |
| 20160254092 | SELF-HEALING CAPACITOR AND METHODS OF PRODUCTION THEREOF | 09-01-2016 |
| 20190144341 | METAL OXYNITRIDE THIN FILM, PROCESS FOR PRODUCING METAL OXYNITRIDE THIN FILM, AND CAPACITOR ELEMENT | 05-16-2019 |
