| Entries |
| Document | Title | Date |
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| 20080204970 | Transparent oxide capacitor structures - A ferroelectric capacitor structure having a lattice matched lanthanide oxide film intervening layer for providing a high polarization state. The capacitor structure includes a glass substrate, a transparent electrode layer disposed on the glass substrate, a lanthanide oxide film disposed on the transparent layer and a ferroelectric perovskite layer disposed on the lanthanide oxide film. The claim also encompases semi-transparent applications where one conductive electrode (top or bottom) is not transparent. | 08-28-2008 |
| 20080212257 | MULTILAYER CERAMIC ELECTRONIC DEVICE - A highly reliable multilayer ceramic electronic device is obtained while preventing crack defects generated in a ceramic laminate by application of a heat shock in a mounting step or the like. | 09-04-2008 |
| 20080212258 | Electronic device and manufacturing method thereof - The electronic device according to the present invention comprises capacitor element body | 09-04-2008 |
| 20080239620 | CARBON NANOTUBE COATED CAPACITOR ELECTRODES - Devices and methods for their formation, including electronic devices containing capacitors, are described. In one embodiment, a device includes a substrate and a capacitor is formed on the substrate. The capacitor includes first and second electrodes and a capacitor dielectric between the first and second electrodes. At least one of the first and second electrodes includes a metal layer having carbon nanotubes coupled thereto. In one aspect of certain embodiments, the carbon nanotubes are at least partially coated with an electrically conductive material. In another aspect of certain embodiments, the substrate comprises an organic substrate and the capacitor dielectric comprises a polymer material. Other embodiments are described and claimed. | 10-02-2008 |
| 20080297975 | VERTICAL PARALLEL PLATE CAPACITOR STRUCTURES - Vertical parallel plate (VPP) capacitor structures that utilize different spacings between conductive plates in different levels of the capacitor stack. The non-even spacings of the conductive plates in the capacitor stack decrease the susceptibility of the capacitor stack of the VPP capacitor to ESD-promoted failures. The non-even spacings may be material specific in that, for example, the spacings between adjacent conductive plates in different levels of the capacitor stack may be chosen based upon material failure mechanisms for plates containing different materials. | 12-04-2008 |
| 20090002917 | CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A capacitor includes a lower electrode, a dielectric layer over the lower electrode, and an upper electrode having a stack structure including a ruthenium-containing layer and a tungsten-containing layer over the dielectric layer. | 01-01-2009 |
| 20090015984 | CAPACITORS COMPRISING ORGANIZED ASSEMBLIES OF CARBON AND NON-CARBON COMPOUNDS - This invention relates generally to capacitors comprising organized assemblies of carbon and non-carbon compounds. This invention further relates to methods of making such organized structures. It also relates to devices containing such structures. In preferred embodiments, the organized structures of the instant invention take the form of nanorods or their aggregate forms. More preferably, a nanorod is made up of a carbon nanotube filled, coated, or both filled and coated by a non-carbon material. In particular, the present invention is directed to a capacitor electrode comprising a carbon nanotube filled with one or more non-carbon materials comprising titanium, a titanium compound, manganese, a manganese compound, cobalt, nickel, palladium, platinum, bromine, iodine, an interhalogen compound, or the combination thereof. | 01-15-2009 |
| 20090122460 | Semiconductor Device and Method for Producing the Same - A semiconductor device includes a semiconductor layer with a first electrode formed by a sintered, conductive, porous granulate and formed in or on the semiconductor layer or in or on at least one insulating layer arranged on the semiconductor layer; furthermore dielectric material covering the surface of the sintered, conductive, porous granulate, and a second electrode at least partially covering the dielectric material, wherein the dielectric material electrically insulates the second electrode from the first electrode. | 05-14-2009 |
| 20090135545 | CAPACITORS HAVING A HIGH ENERGY DENSITY - The invention relates to a capacitor having a porous electrically conductive substrate on whose inner and outer surfaces a first layer of a dielectric and an electrically conductive second layer are applied. | 05-28-2009 |
| 20090147438 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - An MIM capacitance element (capacitance lower electrode, capacitance insulation film and capacitance upper electrode) is provided on a first insulation film on a semiconductor substrate. An interlayer insulation film is provided so as to cover the MIM capacitance element and flattened. The interlayer insulation film is provided with a first connection plug connected to the capacitance upper electrode, a first wiring layer, and a second wiring layer. A second insulation film is provided on the interlayer insulation film. The second insulation film is provided with first and second openings. A wiring pull-out portion which connects the first connection plug and the second wiring layer to each other is provided on the second insulation film. | 06-11-2009 |
| 20090154057 | HIGH CAPACITANCE FILM CAPACITOR SYSTEM AND METHOD FOR MANUFACTURING THE SAME - A film capacitor including a pair of electrodes having multiple pores is provided. The film capacitor includes a polymer film deposited upon each of the pair of electrodes to form a dielectric layer. | 06-18-2009 |
| 20090161290 | POLYSILICON STRUCTURES RESISTANT TO LASER ANNEAL LIGHTPIPE WAVEGUIDE EFFECTS - Laser scan annealing of integrated circuits offers advantages compared to rapid thermal annealing and furnace annealing, but can induce overheating in regions of components with polysilicon layers. Segmented polysilicon elements to reduce overheating is disclosed, as well as a method of forming components with segments polysilicon elements. | 06-25-2009 |
| 20090161291 | Capacitor for Semiconductor Device and Method of Manufacturing the Same - Provided is a capacitor for a semiconductor device. The capacitor comprises a bottom electrode, a dielectric pattern, and a top electrode. The bottom electrode has an uneven surface. The dielectric pattern is on the bottom electrode, and the top electrode is on the dielectric pattern. The bottom electrode has a first height in edge and center regions thereof, and a protrusion between the edge region and the center region of the bottom electrode having a second height greater than the first height. | 06-25-2009 |
| 20090168297 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to a semiconductor device and a method for manufacturing the same. According to embodiments, a method may include forming a multilayer dielectric film on and/or over a lower metal line and forming an upper metal layer on and/or over the multilayer dielectric film. A semiconductor device fabricated by the method may include a lower metal line, a multilayer dielectric film including a plurality of layers laminated in this order on and/or over the lower metal line, and an upper metal layer arranged on and/or over the multilayer dielectric film. Accordingly, a semiconductor device may achieve a high-capacitance (i.e. not less than 6 fF/um | 07-02-2009 |
| 20090195962 | MULTILAYER ELECTRODE STRUCTURES INCLUDING CAPACITOR STRUCTURES HAVING ALUMINUM OXIDE DIFFUSION BARRIERS - A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium oxide and/or titanium oxide. The oxygen diffusion barrier layer is formed at an interface between the conductive layer and the oxide layer by re-oxidizing the oxide layer. The oxygen diffusion barrier layer includes aluminum oxide. | 08-06-2009 |
| 20090244806 | Capacitors And Methods Of Forming Capacitors - A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiO | 10-01-2009 |
| 20090251847 | CAPACITOR WITH SACRIFICIAL LEAD WIRE CONFIGURATION AND IMPROVED MANUFACTURING METHOD THEREOF - The capacitor has a monolithic anode and at least one anode lead wire extending from the anode. At least one sacrificial lead wire extends from the anode. A dielectric layer is on said anode and a cathode layer is on the dielectric layer. The anode lead wire is in electrical contact with the anode and a cathode lead is in electrical contact with the cathode. | 10-08-2009 |
| 20090268371 | CAPACITOR ELECTRODE AND METHOD OF MANUFACTURING THE SAME - This invention relates to a capacitor electrode which includes porous layers made of a fiber and/or a whisker containing crystal tungsten oxides. The tungsten oxide fiber and/or whisker contain W | 10-29-2009 |
| 20090273882 | CAPACITOR AND METHOD FOR FABRICATING THE SAME - A capacitor includes a first electrode, a dielectric layer, and a second electrode. The capacitor also includes a buffer layer formed over at least one of an interface between the first electrode and the dielectric layer and an interface between the dielectric layer and the second electrode, wherein the buffer layer includes a compound of a metal element from electrode materials of one of the first and second electrodes and a metal element from materials included in the dielectric layer. | 11-05-2009 |
| 20090273883 | METHOD AND SYSTEM FOR INCORPORATING HIGH VOLTAGE DEVICES IN AN EEPROM - A method and system for fabricating a stacked capacitor and a DMOS transistor are disclosed. In one aspect, the method and system include providing a bottom plate, an insulator, and an additional layer including first and second plates. The insulator covers at least a portion of the bottom plate and resides between the first and second top plates and the bottom plate. The first and second top plates are electrically coupled through the bottom plate. In another aspect, the method and system include forming a gate oxide. The method and system also include providing SV well(s) after the gate oxide is provided. A portion of the SV well(s) resides under a field oxide region of the device. Each SV well includes first, second, and third implants having a sufficient energy to provide the portion of the SV well at a desired depth under the field oxide region without significant additional thermal processing. A gate, source, and drain are also provided. | 11-05-2009 |
| 20090284898 | RESISTIVE PASTE AND MONOLITHIC CERAMIC CAPACITOR - The formation of a resistive electrode layer as a portion of an external electrode of a monolithic ceramic capacitor by baking a resistive paste, which contains ITO, a glass frit, and an organic vehicle, to impart the function of a resistance element to the external electrode may lead to the occurrence of blisters or reduced denseness. This is modulated when the resistive paste further contains a densification promoting metal or oxide, which promotes densification of a sintered compact of the resistive paste, and a densification preventing metal oxide, which prevents the densification. | 11-19-2009 |
| 20090290281 | MULTILAYER CERAMIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - A multilayer ceramic capacitor having external electrodes. Each of the external electrodes has a lower layer resistance electrode and an upper layer conductive electrode. A glass contained in the upper layer conductive electrode has a softening point higher than that of a glass contained in the lower layer resistance electrode by 20° C. or more. | 11-26-2009 |
| 20100002357 | CONDUCTIVE ELECTRODE USING METAL OXIDE FILM WITH NETWORK STRUCTURE OF NANOGRAINS AND NANOPARTICLES, PREPARATION METHOD THEREOF AND SUPERCAPACITOR USING THE SAME - The present invention relates to a porous conducting metal oxide electrode prepared by depositing a porous conducting metal oxide film comprising a conducting metal oxide film layer having a network structure of nanofibers, comprising nanograins or nanoparticles, on at least one surface of a current collector, and a conducting metal oxide coating layer on the network layer of the porous conducting metal oxide through the constant current method or the cyclic voltammetric method, and a high-speed charge/discharge and ultrahigh-capacity supercapacitor using the porous conducting a metal oxide electrode. | 01-07-2010 |
| 20100020467 | MLCC module - Provided is a MLCC module used as a direct current (DC) link capacitor that is included in an inverter of a hybrid vehicle. The MLCC module includes: a plurality of first ceramic sheets | 01-28-2010 |
| 20100046138 | ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities. | 02-25-2010 |
| 20100079924 | Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby - A method of patterning a metal ( | 04-01-2010 |
| 20100149723 | METHOD AND STRUCTURE FOR CREATION OF A METAL INSULATOR METAL CAPACITOR - The invention is directed to an improved capacitor that reduces edge defects and prevents yield failures. A first embodiment of the invention comprises a protective layer adjacent an interface of a conductive layer with the insulator, while the second embodiment of the invention comprises a protective layer on an insulator which is on a conductive layer. | 06-17-2010 |
| 20100177460 | CHANNEL METHOD FOR FORMING A CAPACITOR - An improved method for forming a capacitor. The method includes:
| 07-15-2010 |
| 20100202098 | CERAMIC ELECTRONIC PART - A ceramic electronic part | 08-12-2010 |
| 20100202099 | THIN FILM CAPACITOR - A thin film capacitor includes a first electrode, second electrode opposite to the first electrode, and a dielectric layered structure disposed between the first and second electrodes and having a doped dielectric layer. The doped dielectric layer contains a dopant therein and has a doping concentration greater than 0 atoms/cm | 08-12-2010 |
| 20100214718 | MAGNETIC CAPACITOR - A magnetic capacitor comprises a dielectric layer having a first surface and a second surface opposed to the first surface, a first electrode disposed on the first surface of the dielectric layer and a second electrode disposed on the second surface of the dielectric layer. The first electrode has a plurality of first magnetic dipoles with a same first direction, and the first direction of the first magnetic dipoles is perpendicular to the dielectric layer. | 08-26-2010 |
| 20100226066 | CAPACITORS USING PREFORMED DIELECTRIC - Devices for storing energy at a high density are described. The devices include a solid dielectric that is preformed to present a high exposed area onto which an electrode is formed. The dielectric material has a high dielectric constant (high relative permittivity) and a high breakdown voltage, allowing a high voltage difference between paired electrodes to effect a high stored energy density. | 09-09-2010 |
| 20100259865 | FILM CAPACITORS WITH IMPROVED DIELECTRIC STRENGTH BREAKDOWN - A film capacitor including a first electrode is provided. The film capacitor also includes a first dielectric layer having a first dielectric constant disposed upon a first electrode, a second dielectric layer having a second dielectric constant disposed upon the first dielectric layer, wherein the second dielectric constant is at least fifty percent greater than the first dielectric constant, and a metalized film disposed upon the second dielectric layer. It further includes a second electrode disposed upon the metalized film. | 10-14-2010 |
| 20100271753 | METAL OXIDE METAL CAPACITOR WITH SLOT VIAS - A capacitor includes the first electrode comprising the first conductive lines and vias, where the first conductive lines on the same layer are parallel to each other and connected to the first periphery conductive line, and the first conductor lines aligned in adjacent layers are coupled to each other by the vias; the second electrode aligned opposite to the first electrode comprising the second conductive lines and vias, where the second conductive lines on the same layer are parallel to each other and connected to the second periphery conductive line, and the second conductor lines aligned in adjacent layers are coupled to each other by the vias; and oxide layers formed between the first electrode and the second electrode, where the vias have rectangular (slot) shape on a layout. In one embodiment, the conductive lines and vias are metal, e.g. copper, aluminum, or tungsten. The vias can have various sizes. | 10-28-2010 |
| 20100284125 | Nanowire capacitor and method of manufacturing the same - Provided is a method of manufacturing a nanowire capacitor including forming a lower metal layer on a substrate; growing conductive nanowires on the lower metal layer, the conductive nanowires including metal and transparent electrodes; depositing a dielectric layer on the lower metal layer including the grown conductive nanowires; growing dielectric nanowires on the deposited dielectric layer; and depositing an upper metal layer on the dielectric layer including the grown dielectric nanowires. | 11-11-2010 |
| 20100290172 | LAMINATED ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREFOR - A method for manufacturing a laminated electronic component includes the steps of preparing a component main body having a laminated structure, the component main body including a plurality of internal electrodes formed therein, and each of the internal electrodes being partially exposed on an external surface of the component main body, and forming an external terminal electrode on the external surface of the component main body such that the external terminal electrode is electrically connected to the internal electrodes. The step of forming the external terminal electrode includes the steps of forming a first plating layer on exposed surfaces of the internal electrodes of the component main body, applying a water repellant at least on a surface of the first plating layer and on a section in the external surface of the component main body at which an end edge of the first plating layer is located, and then forming a second plating layer on the first plating layer having the water repellant applied thereon. | 11-18-2010 |
| 20100302703 | THIN FILM CAPACITORS WITH MAGNETICALLY ENHANCED CAPACITANCE - A capacitor is disclosed. The capacitor includes a conductive and non-magnetic layer, a magnetic and conductive layer, and a dielectric layer. The dielectric layer is disposed between the conductive and non-magnetic layer and the magnetic and conductive layer. The magnetic and conductive layer is capable of generating a magnetic field, and thus enhances the dielectric constant of the dielectric layer for at least 10 folds. | 12-02-2010 |
| 20100321861 | Capacitors Comprising Organized Assemblies of Carbon and Non-Carbon Compounds - This invention relates generally to capacitors comprising organized assemblies of carbon and non-carbon compounds. This invention further relates to methods of making such organized structures. It also relates to devices containing such structures. In preferred embodiments, the organized structures of the instant invention take the form of nanorods or their aggregate forms. More preferably, a nanorod is made up of a carbon nanotube filled, coated, or both filled and coated by a non-carbon material. In particular, the present invention is directed to a capacitor electrode comprising a carbon nanotube filled with one or more non-carbon materials comprising titanium, a titanium compound, manganese, a manganese compound, cobalt, nickel, palladium, platinum, bromine, iodine, an interhalogen compound, or the combination thereof. | 12-23-2010 |
| 20100328843 | LAMINATED CERAMIC ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREFOR - In a method for manufacturing a laminated ceramic electronic component, after a plating layer for an external terminal electrode is formed by applying copper plating to an end surface of a component main body at which respective ends of a plurality of internal electrodes primarily including nickel are exposed, when a heat treatment at a temperature of about 800° C. or more is applied in order to improve adhesion strength and resistance to moisture of the external terminal electrode, voids may occur in the plating layer. The step of applying a heat treatment at a temperature of about 800° C. or more to a component main body with plating layers formed thereon includes not only a step of maintaining a top temperature of about 1000° C. or more but also a step of maintaining a temperature of about 600° C. to 900° C. at least once before the step of maintaining the top temperature. These steps preliminarily diffuse copper included in the plating layers, which has a relatively high diffusion velocity, into the internal electrodes primarily including nickel, thereby reducing a difference in diffusion velocity between copper and nickel at the top temperature, which causes the occurrence of voids. | 12-30-2010 |
| 20110013339 | ASSEMBLY OF MAGNETIC CAPACITOR WITH PACKAGING - An assembly of an magnetic capacitor with a packaging comprises: a magnetic capacitor; two packing electrodes, one of the two end electrodes including an upper magnetic casing installed upon a top surface of the capacitor and a lower magnetic casing installed at a lower surface of the capacitor; each of the upper magnetic casing and the lower magnetic casing being formed with extruding pieces which is arranged around a lateral side of the capacitor; and at least one insulation material for isolating magnetic material is arranged within the magnetic capacitor. | 01-20-2011 |
| 20110038094 | CAPACITOR - A capacitor includes a plurality of laminated thin layers, has a structure in which a lower electrode layer, a dielectric layer and an upper electrode layer are laminated in sequence, a main material of the lower electrode layer is TiN or ZrN, the lower electrode layer contains oxygen, and concentration of the oxygen contained in the lower electrode layer is less than 21 at %. | 02-17-2011 |
| 20110075319 | THIN-FILM CAPACITOR - To provide a thin-film capacitor capable of preventing the degradation of electrical characteristics caused by direct contact between an adhesion layer of a terminal electrode and a dielectric layer, to increase the reliability. The thin-film capacitor comprises: a dielectric layer deposited on a base electrode; an upper electrode layer deposited on the dielectric layer; a terminal electrode including an adhesion layer, a seed layer, and a plating layer; a resin layer for wiring provided between the upper electrode layer and the terminal electrode for isolating the upper electrode layer from the terminal electrode; and a wiring layer provided so as to extend through the resin layer for wiring in contact with the adhesion layer for electrically connecting the upper electrode layer and the terminal electrode, wherein a composition of the wiring layer differs from that of the adhesion layer of the terminal electrode, and wherein a reducing power of the wiring layer to the dielectric layer is smaller than that of the adhesion layer. | 03-31-2011 |
| 20110102968 | MULTILAYER STRUCTURE, CAPACITOR INCLUDING THE MULTILAYER STRUCTURE AND METHOD OF FORMING THE SAME - In a multilayer structure and a method of forming the same, a conductive layer including a metal nitride and a dielectric layer positioned on a surface of the conductive layer and having a high dielectric constant. The metal nitride comprises one of niobium, vanadium and compositions thereof. Thus, the EOT and leakage current of the multilayer structure may be sufficiently improved. | 05-05-2011 |
| 20110122540 | LAMINATED ELECTRONIC COMPONENT - A laminated electronic component includes a component body including a plurality of laminated functional layers, a plurality of internal conductors provided inside the component body, and an external terminal electrode that is electrically connected to an internal conductor via an exposed portion of the internal conductor and that is defined by a direct plating film. An average grain diameter of metal grains defining the plating film is about 0.1 μm or less. | 05-26-2011 |
| 20110128666 | High-Load Rate Supercapacitor Electrode and Method for Obtaining Same by Extrusion - The invention concerns a method for making a porous substrate-electrode complex ( | 06-02-2011 |
| 20110128667 | SEMICONDUCTOR DEVICE INCLUDING CARBON-CONTAINING ELECTRODE AND METHOD FOR FABRICATING THE SAME - In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity. | 06-02-2011 |
| 20110128668 | ELECTRODE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING CAPACITOR - An electrode of a semiconductor device includes a TiCN layer and a TiN layer. A method for fabricating an electrode of a semiconductor device includes preparing a substrate, forming a TiCN layer, and forming a TiN layer. | 06-02-2011 |
| 20110157767 | MULTILAYER CERAMIC CAPACITOR - A multilayer ceramic capacitor is provided. In the multilayer ceramic capacitor, a plurality of first and second inner electrodes are formed inside a ceramic sintered body. Ends of the first and second inner electrodes are alternately exposed to both ends of the ceramic sintered body. First and second outer electrodes are formed on both ends of the ceramic sintered body and connected to the first and second inner electrodes. The first and second outer electrodes include a first region having a porosity in the range of 1% to 10%, and a second region having a porosity less than that of the first region. | 06-30-2011 |
| 20110164345 | METAL-INSULATOR-METAL CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a metal-insulator-metal capacitor, which includes: a substrate, a copper-based bottom electrode overlying the substrate, wherein the copper based bottom electrode is doped with rhenium nitride or ruthenium nitride, a top electrode overlying the copper based bottom electrode, and a capacitor insulator between and adjoining the copper based bottom electrode and the top electrode. | 07-07-2011 |
| 20110188170 | CAPACITORS COMPRISING ORGANIZED ASSEMBLIES OF CARBON AND NON-CARBON COMPOUNDS - This invention relates generally to capacitors comprising organized assemblies of carbon and non-carbon compounds. This invention further relates to methods of making such organized structures. It also relates to devices containing such structures. In preferred embodiments, the organized structures of the instant invention take the form of nanorods or their aggregate forms. More preferably, a nanorod is made up of a carbon nanotube filled, coated, or both filled and coated by a non-carbon material. In particular, the present invention is directed to a capacitor electrode comprising a carbon nanotube filled with one or more non-carbon materials comprising titanium, a titanium compound, manganese, a manganese compound, cobalt, nickel, palladium, platinum, bromine, iodine, an interhalogen compound, or the combination thereof. | 08-04-2011 |
| 20110205684 | CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - A capacitor includes a capacitor body made of a dielectric, a first internal electrode, a second internal electrode, a first signal terminal, a second signal terminal, and a grounding terminal. The first and second signal terminals are connected to the first internal electrode. The grounding terminal is disposed on the outer surface of the capacitor body so as to be connected to the second internal electrode. The grounding terminal is connected to the ground potential. The grounding terminal includes a plating layer which is disposed on the capacitor body and which is connected to the second internal electrode. | 08-25-2011 |
| 20110299221 | Chip-Type Electronic Component - A chip-type electronic component with high reliability, which is able to suppress and prevent fatal damage to a ceramic body due to cracking even if a substrate with the chip-type electronic component mounted thereon undergoes a deflection. The chip-type electronic component includes a ceramic body having internal electrodes; resin electrode layers formed in a region including at least end surfaces of the ceramic body, and connected to the internal electrodes directly or indirectly and connected with the ceramic body; and plating metal layers covering the resin electrode layers, wherein the adhesion strength between the ceramic body and the resin electrode layer is higher than the adhesion strength between the resin electrode layer and the plating metal layer. | 12-08-2011 |
| 20120008251 | Film capacitors comprising melt-stretched films as dielectrics - A film capacitor comprising (1) of electric conduction electrodes and (2) of semi-crystalline polymeric dielectric film(s), the thickness of which ranges from 1 micron to 80 micron, made by a melt-stretching extrusion process through a die (circular die or flat die) with a drawdown ratio of 30 or higher (the ratio of die gap to the film thickness) at die temperatures higher than the melting point of said semi-crystalline polymer(s). The semi-crystalline polymeric dielectric films made by such melt-stretching extrusion process show a significantly low shrinkage at high temperatures until they are melted. The capacitor comprising such low shrinkage film dielectrics can be used at a much higher temperature than comprising conventional biaxially oriented film dielectrics made of the same plastic materials. | 01-12-2012 |
| 20120033343 | REDUCTION-RESISTANT DIELECTRIC COMPOSITION AND CERAMIC ELECTRONIC COMPONENT INCLUDING THE SAME - There are provided a reduction-resistant dielectric composition and a ceramic electronic component including the same. The reduction-resistant dielectric composition may include a BaTiO | 02-09-2012 |
| 20120039017 | Devices Having a Diamond-Like-Carbon Dielectric - A structural capacitor includes a first carbon fiber material layer, a second carbon fiber material layer, and an interlayer dielectric including a diamond-like-carbon material layer. | 02-16-2012 |
| 20120044612 | TANTALUM-BASED ELECTRODE STACK - An electronic device includes a metal-insulator-metal capacitive device. In connection with an example embodiment, a metal-insulator-metal (MIM) capacitor device is in a substrate having a surface and a three dimensional structure with high aspect ratio sidewalls. The MIM capacitor device includes a first capacitor electrode including a platinum group metal (PGM)-based layer and a Ta-based layer that is between the PGM-based layer and one of the sidewalls. The MIM capacitor also includes a second capacitor electrode and an insulator material between the first and second electrodes. | 02-23-2012 |
| 20120057269 | CONDUCTIVE COMPOSITION AND CONDUCTIVE CROSS-LINKED PRODUCT, CAPACITOR AND PRODUCTION METHOD THEREOF, AND ANTISTATIC COATING MATERIAL, ANTISTATIC COATING, ANTISTATIC FILM, OPTICAL FILTER, AND OPTICAL INFORMATION RECORDING MEDIUM - A conductive composition comprises a π conjugated conductive polymer, a dopant, and a nitrogen-containing aromatic cyclic compound. A capacitor comprises an anode composed of a porous material of valve metal, a dielectric layer formed by oxidizing the surface of the anode, and a cathode provided on the dielectric layer and having a solid electrolyte layer containing a π conjugated conductive polymer, which comprises an electron donor compound containing an electron donor element provided between the dielectric layer and the cathode. Another capacitor is based on the above-described capacitor, wherein the solid electrolyte layer further comprises a dopant and a nitrogen-containing aromatic cyclic compound. An antistatic coating material comprises a π conjugated conductive polymer, a solubilizing polymer containing an anion group and/or an electron attractive group, a nitrogen-containing aromatic cyclic compound, and a solvent. An antistatic coating is formed by applying the antistatic coating material. | 03-08-2012 |
| 20120087059 | CAPACITOR AND METHOD FOR MANUFACTURING CAPACITOR - A capacitor includes a substrate made of an organic film, a first conductive layer provided on an upper surface of the substrate, a first dielectric layer provided on an upper surface of the first conductive layer, a second dielectric layer provided on an upper surface of the first dielectric layer, and a second conductive layer provided on an upper surface of the second dielectric layer. The first dielectric layer is made of plural metal oxide chips spread over on the upper surface of the first conductive layer. The second dielectric layer is made of plural metal oxide chips spread over on a lower surface of the second conductive layer. This capacitor can have a large capacitance. | 04-12-2012 |
| 20120134066 | MULTI-LAYERED CERAMIC CAPACITOR HAVING DUAL LAYER-ELECTRODE STRUCTURE - There is provided a multi-layered ceramic capacitor having a dual layer-electrode structure formed by applying a dual layer of electrode paste to the multi-layered ceramic capacitor. The multi-layered ceramic capacitor having a dual layer-electrode structure includes a capacitor body having a preset length and width and having a plurality dielectric layers stacked therein, an internal electrode unit formed on the plurality of dielectric layers and having a preset capacitance, and an external electrode unit including first external electrodes respectively formed on both sides of the capacitor body to be electrically connected to internal electrodes, and second external electrodes formed on the first external electrodes. | 05-31-2012 |
| 20120147519 | ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities. | 06-14-2012 |
| 20120162855 | CONDUCTIVE PASTE COMPOSITION FOR INTERNAL ELECTRODE, MULTILAYER CERAMIC CAPACITOR COMPRISING THE SAME AND METHOD OF MANUFACTURING THEREOF - There are provided a conductive paste composition for an internal electrode, and a multilayer ceramic capacitor comprising the same and a manufacturing method thereof. The conductive paste composition includes a metal powder, a dispersant made of an acrylic polymer having a weight average molecular weight of 500 to 5,000, and at least one organic binder selected from a group consisting of a polyvinylbutyral resin and a cellulose resin. The conductive paste composition for an internal electrode has superior dispersibility of the metal powder in the paste. | 06-28-2012 |
| 20120162856 | CONDUCTIVE PASTE COMPOSITION FOR TERMINATION ELECTRODE AND MULTILAYER CERAMIC CAPACITOR INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF - There are provided a conductive paste composition for a termination electrode, and a multilayer ceramic capacitor including the same and a manufacturing method thereof. The conductive paste composition includes 100 parts by weight of conductive metal powder and 0.1 to 10 parts by weight of ceramic powder having an average particle size of 50 to 500 nm. The conductive paste composition described above may achieve a high firing density even in the case that it is used in the manufacturing of a thin film, and inhibit the occurrence of blisters, a delamination failure of the termination electrode during calcination of the electrode, thereby producing a compact and thin film. | 06-28-2012 |
| 20120188682 | CERAMIC ELECTRONIC COMPONENT - A ceramic electronic component includes a ceramic body, a first external electrode, and a second external electrode. The first and second external electrodes are disposed on a principal surface, which is directed to the mounting surface side, of the ceramic body so as to face each other with a predetermined gap region therebetween. The external electrodes each include a base layer and a Cu plating layer which covers the base layer. In each of the first and second external electrodes, an expression 0.1≦t/d≦0.5 is satisfied, where t is a thickness of the Cu plating layer at an end of the base layer on a gap region side, and d is a distance from the end of the base layer on the gap region side to an end of the Cu plating layer on the gap region side. | 07-26-2012 |
| 20120236461 | CERAMIC ELECTRONIC COMPONENT - A ceramic electronic component includes a substantially rectangular ceramic element assembly, a first external electrode, and a second external electrode. The first external electrode includes at least one plating film including a first plating film disposed directly on the ceramic element assembly from outside. Likewise, the second external electrode includes at least one plating film including a second plating film disposed directly on the ceramic element assembly from outside. The first and second plating films each have a surface area per unit area equal to or larger than about 1.02 in plan view. | 09-20-2012 |
| 20120314336 | ELECTRONIC COMPONENT - An electronic component, preferably in the form of a laminated ceramic capacitor, which suppresses the growth of whiskers and has excellent solderability, includes an electronic component element in the shape of, for example, a rectangular parallelepiped. External electrodes of terminal electrodes are located on first and second end surfaces of the electronic component element. First plated films including plated Ni are located on the surfaces of the external electrodes. Second plated films are located on the surfaces of the first plated films. The second plated films have stacked structures including first plated layers and second plated layers. The second plated layers have lower degrees of densification than the first plated layers. | 12-13-2012 |
| 20120314337 | ELECTROSTATIC CAPACITOR DEVICE - An electrostatic capacitor device is disclosed including first and second spaced apart electrode structures separated by a dielectric structure in which the first and second electrode structures are each formed from a composite material which includes electrically conductive fibres in a binder matrix. | 12-13-2012 |
| 20130003256 | METHOD OF MANUFACTURING A FERROELECTRIC CAPACITOR AND A FERROELECTRIC CAPACITOR - A lower electrode film is formed above a substrate. A ferroelectric film is formed above the lower electrode film. An amorphous intermediate film of a perovskite-type conductive oxide is formed above the ferroelectric film. A first upper electrode film comprising oxide of at least one metal selected from a group of Pt, Pd, Rh, Ir, Ru, and Os is formed on the intermediate film. The intermediate film is crystallized by carrying out a first heat treatment in an atmosphere containing an oxidizing gas after the formation of the first upper electrode film. After the first heat treatment, a second upper electrode film comprising oxide of at least one metal selected from a group of Pt, Pd, Rh, Ir, Ru, and Os is formed on the first upper electrode film, at a temperature lower than the growth temperature for the first upper electrode film. | 01-03-2013 |
| 20130058005 | PACKAGE TYPE MULTI LAYER THIN FILM CAPACITOR FOR HIGH CAPACITANCE - Provided is a package type multi-layer thin film capacitor for large capacitance, including: a ceramic sintered body formed with slots on one side and another side thereof, respectively; a plurality of first internal electrode layers formed within the ceramic sintered body; a plurality of second internal electrode layers formed within the ceramic sintered body to be positioned between the plurality of first internal electrode layers; a pair of first main connection electrode members inserted into the slots to be connected to the first internal electrode layers or the second internal electrode layers, respectively; a pair of first main lead members inserted into the slots and to be connected to the first main connection electrode members, respectively; and a sealing member sealing the ceramic sintered body to partially expose each of the pair of first main lead members. | 03-07-2013 |
| 20130063861 | INTERDIGITATED CAPACITOR HAVING DIGITS OF VARYING WIDTH - An interdigitated capacitor having digits of varying width is disclosed. One embodiment of a capacitor includes a first plurality of conductive digits and a second plurality of conductive digits positioned in an interlocking manner with the first plurality of conductive digits, such that an interdigitated structure is formed. The first plurality of conductive digits and the second plurality of conductive digits collectively form a set of digits, where the width of a first digit in the set of digits is non-uniform with respect to a second digit in the set of digits. | 03-14-2013 |
| 20130063862 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND FABRICATION METHOD THEREOF - There is provided a multilayer ceramic electronic component, including: a ceramic main body including a dielectric layer; and inner electrodes disposed to face each other within the ceramic main body, with the dielectric layer interposed therebetween, wherein, when an average thickness of the dielectric layer is td and an average thickness of the inner electrodes is te, 0.1 μm≦te≦0.5 μm and (td+te)/te≦2.5 are satisfied, and when an average surface roughness on a virtual surface roughness center line of the inner electrode is Ra and an average roughness of ten points of the inner electrode is Rz, 5 nm≦Ra≦30 nm, 150 nm≦Rz≦td/2, and 8≦Rz/Ra≦20 are satisfied. The multilayer ceramic electronic component has excellent reliability by improving adhesion strength between the dielectric layer and the inner electrodes and withstand voltage characteristics. | 03-14-2013 |
| 20130094120 | THIN-FILM CAPACITOR - A thin-film capacitor | 04-18-2013 |
| 20130094121 | LAMINATED CERAMIC ELECTRONIC PARTS - A compact laminated ceramic electronic component having superior moisture resistance and electrical properties is provided. | 04-18-2013 |
| 20130100577 | Method for Forming a MIMCAP Structure and the MIMCAP Structure Thereof - A method for forming a Metal-Insulator-Metal Capacitor (MIMCAP) structure and the MIMCAP structure thereof are described. An example electronic device includes a first electrode, and a layer of a dielectric material including titanium oxide and a first dopant ion. The layer of the dielectric material is formed on the first electrode. The first dopant ion has a size mismatch of 10% or lower compared to the Ti | 04-25-2013 |
| 20130107419 | MULTILAYERED CERAMIC CAPACITOR WITH IMPROVED LEAD FRAME ATTACHMENT | 05-02-2013 |
| 20130141835 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING THE SAME - There is provided a multilayer ceramic electronic component, including: a ceramic element having a plurality of dielectric layers laminated therein; and first and second internal electrodes formed within the ceramic element, wherein the first and second internal electrodes include 80 to 99.98 wt % of nickel (Ni), 0.01 to 10 wt % of copper (Cu), and 0.01 to 10 wt % of barium titanate (BaTiO | 06-06-2013 |
| 20130148261 | CONDUCTIVE PASTE FOR EXTERNAL ELECTRODE, MULTILAYER CERAMIC ELECTRONIC COMPONENT USING THE SAME, AND METHOD OF MANUFACTURING THE SAME - There are provided a conductive paste for an external electrode, a multilayer ceramic electronic component using the same, and a method of manufacturing the same. More particularly, there are provided a conductive paste for an external electrode including: a conductive metal powder; and a spherical glass frit having an average particle size of 0.05 to 3.0 μm, a multilayer ceramic electronic component using the same, and a method of manufacturing the same. According to the present invention, a spherical glass frit having fine particles may be applied at the time of preparing the conductive paste for an external electrode, thereby realizing external electrodes having excellent compactness at a low temperature and suppressing the occurrence of cracks, and thus, a multilayer ceramic electronic component having excellent reliability can be implemented. | 06-13-2013 |
| 20130155572 | Metal-Insulator-Metal Stack and Method for Manufacturing the Same - A method for manufacturing a metal-insulator-metal (MIM) stack is described. The method includes forming a temporary stack by depositing a bottom electrode comprising at least one metal layer; depositing a dielectric comprising at least one layer of a dielectric material having a first dielectric constant value; and depositing a top electrode comprising at least one metal layer. The step of depositing the bottom and/or top electrode includes depositing a non-conductive metal oxide layer directly in contact with the dielectric; and after the step of depositing the bottom and/or top electrode's non-conductive metal oxide layer and the dielectric, subjecting the temporary stack to a stimulus, which transforms the non-conductive metal oxide into a thermodynamically stable oxide having conductive properties or into a metal, and the dielectric material into a crystalline form having a second dielectric constant value higher than the first dielectric constant value, thereby creating the final MIM stack. | 06-20-2013 |
| 20130155573 | ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF - There is provided an electronic component including a ceramic sintered body having a plurality of internal electrodes formed therein, and external electrodes formed on an outer surface of the ceramic sintered body. Each of the external electrodes includes a copper (Cu) electrode layer electrically connected to the internal electrodes, a copper (Cu)-tin (Sn) alloy layer formed on an outer surface of the electrode layer, and a tin (Sn) plating layer formed on an outer surface of the alloy layer. | 06-20-2013 |
| 20130170095 | MULTI LAYER CERAMIC CAPACITOR - Provided is a multilayer ceramic capacitor including a multilayer ceramic plastic body formed so that a plurality of internal electrode layers intersects; and a plurality of external electrodes, each formed to cover one side or another side of the multilayer ceramic plastic body and connected to the plurality of internal electrode layers. Each of the plurality of external electrodes includes a plurality of conductive layers that is sequentially formed to cover one side or another side of the multilayer ceramic plastic body, and one of the plurality of conductive layers is formed of conductive resin hardened through an irradiation cross-linking method using gamma ray. | 07-04-2013 |
| 20130208401 | ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT - An electronic component has an element body and an external electrode arranged on the element body. The element body has a pair of end faces opposed to each other, a pair of principal faces opposed to each other, and a pair of side faces opposed to each other. The external electrode is formed so as to cover the end face and a partial region of the principal face and/or a partial region of the side face. The external electrode has a thick film electrode, a thin film electrode, and a plated layer. The thick film electrode is formed on the end face. The thin film electrode is formed so as to cover the thick film electrode and the partial region of the principal face and/or the partial region of the side face. The plated layer is formed outside the thin film electrode and contains Sn or an Sn alloy. | 08-15-2013 |
| 20130250478 | DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT INCLUDING THE SAME - There is provided a dielectric composition, including: a base powder including Ba | 09-26-2013 |
| 20130294008 | MULTILAYER ELECTRONIC COMPONENTS AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a multilayer electronic component having a structure in which a dielectric layer and an internal electrode layer are alternately laminated, which includes the dielectric layer and the internal electrode layer including metal powder and an inhibitor, wherein the inhibitor includes 0.5 to 20 mol % of a Ca component based on 100 mol % of a barium titanate (BT) base material, and a method for manufacturing the same. | 11-07-2013 |
| 20130294009 | ELECTRONIC COMPONENT - In an electronic component, a body includes top and bottom surfaces, first and second end surfaces, and first and second lateral surfaces. A first outer electrode partially extends over the bottom surface and the first end surface without being disposed on the top surface, the second end surface, and both the lateral surfaces. A second outer electrode partially extends over the bottom surface and the second end surface without being disposed on the top surface, the first end surface, and both the lateral surfaces. An area of a first end surface portion of the first outer electrode disposed on the first end surface and area of a second end surface portion of the second outer electrode disposed on the second end surface are in a range of about 6.6% to about 35.0% of area of the first and second end surfaces, respectively. | 11-07-2013 |
| 20130321979 | CONDUCTIVE PASTE COMPOSITION FOR INTERNAL ELECTRODE, MULTILAYER CERAMIC CAPACITOR, AND FABRICATION METHOD THEREOF - There are provided a conductive paste composition for an internal electrode, a multilayer ceramic capacitor having the same, and a fabrication method thereof. The conductive paste composition for an internal electrode includes a binder, a solvent, and metal powder for an internal electrode, including a nickel particle coated with a nickel nitride. | 12-05-2013 |
| 20130321980 | MULTILAYER CERAMIC CAPACITOR AND METHOD FOR MANUFACTURING MULTILAYER CERAMIC CAPACITOR - A multilayer ceramic capacitor includes a multilayer body including a plurality of laminated dielectric layers and a plurality of internal electrodes arranged along interfaces between the dielectric layers, and a plurality of external electrodes located on an outer surface of the multilayer body and electrically connected to the internal electrodes. A main component of the internal electrodes is Ni, and the internal electrodes also contain Sn. | 12-05-2013 |
| 20130329338 | CERAMIC ELECTRONIC COMPONENT - In a ceramic electronic component, a section of a first extraction section located closer to a first end surface defines a first thick section. The first thick section is at least about 1.5 times as thick as a first central section of a first opposed section in a direction. The length of the first thick section is within the range of about ¼ to about ¾ of a distance from a tip of a second opposed section closer to the first end surface, to the first end surface in the direction. | 12-12-2013 |
| 20130335882 | METHOD OF MAKING DIELECTRIC CAPACITORS WITH INCREASED DIELECTRIC BREAKDOWN STRENGTH - The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields. | 12-19-2013 |
| 20130342959 | CAPACITORS COMPRISING ORGANIZED ASSEMBLIES OF CARBON AND NON-CARBON COMPOUNDS - This invention relates generally to capacitors comprising organized assemblies of carbon and non-carbon compounds. This invention further relates to methods of making such organized structures. It also relates to devices containing such structures. In preferred embodiments, the organized structures of the instant invention take the form of nanorods or their aggregate forms. More preferably, a nanorod is made up of a carbon nanotube filled, coated, or both filled and coated by a non-carbon material. In particular, the present invention is directed to a capacitor electrode comprising a carbon nanotube filled with one or more non-carbon materials comprising titanium, a titanium compound, manganese, a manganese compound, cobalt, nickel, palladium, platinum, bromine, iodine, an interhalogen compound, or the combination thereof. | 12-26-2013 |
| 20130342960 | THIN FILM CAPACITOR - A thin film capacitor includes a lower electrode layer, a dielectric layer that is provided on said lower electrode layer, and an upper electrode layer that is formed on the dielectric layer. Wherein, the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer. | 12-26-2013 |
| 20140085770 | CHIP DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a chip device including: a multilayer body having a hexahedral shape; an external electrode covering both distal ends of the multilayer body; and a shape maintaining material contained in the external electrode to maintain a shape of the external electrode at the time of forming the external electrode. | 03-27-2014 |
| 20140092524 | CAPACITOR AND METHOD OF MANUFACTURING THE SAME - There is provided a capacitor, including: a substrate part including a first substrate having a groove portion and a second substrate positioned above the first substrate and having a protrusion portion; a first capacitance part formed on one surface of the first substrate and having a shape corresponding to that of the groove portion; and a second capacitance part formed on one surface of the second substrate and having a shape corresponding to that of the protrusion portion. | 04-03-2014 |
| 20140092525 | DIELECTRIC COMPOSITION AND MULTILATER CERAMIC ELECTRONIC COMPONENT MANUFACTURED USING THE SAME - There are provided a dielectric composition and a multilayer ceramic electronic component manufactured using the same, the dielectric composition including a dielectric grain having a perovskite structure represented by ABO | 04-03-2014 |
| 20140098457 | DIELECTRIC COMPOSITION AND MULTILAYER CERAMIC ELECTRONIC COMPONENT MANUFACTURED USING THE SAME - There are provided a dielectric composition and a multilayer ceramic electronic component manufactured using the same, the dielectric composition including a dielectric grain having a perovskite structure represented by ABO | 04-10-2014 |
| 20140098458 | GRAPHENE-BASED COMPOSITE MATERIALS, METHOD OF MANUFACTURE AND APPLICATIONS THEREOF - Disclosed herein is a composite material comprising a relaxor ferroelectric material and a hydrazine-reduced graphene oxide, wherein the weight ratio of the composite material to the hydrazine-reduced graphene oxide is 9:1 to 200:1. The composite materials have high dielectric permittivity and low dielectric losses and can be used to manufacture various high dielectric permittivity components. | 04-10-2014 |
| 20140104749 | MULTI-LAYER CERAMIC CAPACITOR HAVING DUAL LAYER-ELECTRODE STRUCTURE - There is provided a multi-layered ceramic capacitor having a dual layer-electrode structure formed by applying a dual layer of electrode paste to the multi-layered ceramic capacitor. The multi-layered ceramic capacitor having a dual layer-electrode structure includes a capacitor body having a preset length and width and having a plurality dielectric layers stacked therein, an internal electrode unit formed on the plurality of dielectric layers and having a preset capacitance, and an external electrode unit including first external electrodes respectively formed on both sides of the capacitor body to be electrically connected to internal electrodes, and second external electrodes formed on the first external electrodes. | 04-17-2014 |
| 20140126109 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND FABRICATING METHOD THEREOF - There is provided a multilayered ceramic electronic component including: a ceramic body including dielectric layers; internal electrodes disposed to face each other, having the dielectric layers therebetween; and external electrodes formed on outer surfaces of the ceramic body and electrically connected to the internal electrodes, wherein the internal electrodes include a first ceramic powder formed of barium titanate (BaTiO | 05-08-2014 |
| 20140153157 | Capacitor - A capacitor includes a dielectric layer having a first plane, a second plane opposite to the first plane, and a plurality of through-holes communicated with the first and second planes; a first external electrode layer disposed on the first plane; a second external electrode layer disposed on the second plane; a first internal electrode having first and second electrode portions, the first and second electrode portions being formed of a first conductive material, and a second conductive material, respectively, the second electrode material connecting the first electrode portion with the first external electrode layer, the second conductive material having a smaller Young's modulus than the first conductive material, the first internal electrode being formed in a part of the plurality of through-holes; and a second internal electrode formed in another part of the plurality of through-holes, the second internal electrode being connected to the second external electrode layer. | 06-05-2014 |
| 20140177132 | Electronic Component Termination and Assembly by Means of Transient Liquid Phase Sintering Metalurgical Bonds - An improved method for forming a capacitor is provided as is a capacitor, or electrical component, formed by the method. The method includes providing an aluminum containing anode with an aluminum oxide dielectric thereon; forming a cathode on a first portion of the aluminum oxide dielectric; bonding an anode lead to the aluminum anode on a second portion of the aluminum oxide by a transient liquid phase sintered conductive material thereby metallurgical bonding the aluminum anode to the anode lead; and bonding a cathode lead to said cathode. | 06-26-2014 |
| 20140185187 | ELECTROSTATIC ENERGY STORAGE DEVICE AND PREPARATION METHOD THEREOF - The present invention discloses an electrostatic energy storage device and a preparation method thereof. The device comprises at least one electrostatic energy storage unit, wherein each electrostatic energy storage unit is provided with a five-layer structure and comprises two metal film electrodes which form a capacitor, composite nano insulating film layers attached to the inner sides of the two metal film electrodes, and a ceramic nano crystalline film arranged between the composite nano insulating film layers. Based on the electrostatic parallel-plate induction capacitor principle, the metal film electrodes with a nano microstructure and the ceramic nano crystalline film sandwiched between the metal film electrodes and having an ultrahigh dielectric constant form an electrostatic induction plate capacitor to store electrostatic energy. | 07-03-2014 |
| 20140185188 | ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING THE SAME - Disclosed herein are an electronic component and a method of manufacturing the same. In an electronic component having a conductor formed in an insulator and providing an external electrode electrically connected to the conductor on an outer surface of the insulator, a curvature of the external electrode in a via machining region is decreased at a predetermined level or less, thereby making it possible to decrease defect generation due to a glare-reflection of a laser. | 07-03-2014 |
| 20140233152 | FABRICATION OF POROUS SILICON ELECTROCHEMICAL CAPACITORS - Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques. | 08-21-2014 |
| 20140233153 | METHODS FOR MANUFACTURE A CAPACITOR WITH THREE-DIMENSIONAL HIGH SURFACE AREA ELECTRODES - A capacitor, and methods of its manufacture, having improved capacitance efficiency which results from increasing the effective area of an electrode surface are disclosed. An improved “three-dimensional” capacitor may be constructed with electrode layers having three-dimensional aspects at the point of interface with a dielectric such that portions of the electrode extend into the dielectric layer. Advantageously, embodiments of a three-dimensional capacitor drastically reduce the space footprint that is required in a circuit to accommodate the capacitor, when compared to current capacitor designs. Increased capacitance density may be realized without using high k (high constant) dielectric materials, additional “electrode—dielectric—electrode” arrangements in an ever increasing stack, or serially stringing together multiple capacitors. | 08-21-2014 |
| 20140268490 | Super Capacitor And Method For Manufacturing The Same - The invention provides a super capacitor, comprising: a bottom electrode, made of metal that has a sponge-like porous bicontinuous structure wherein the porous bicontinuous structure comprises a plurality of continuous nano pores; a dielectric layer, made of material with high dielectric constant and disposed on the bottom electrode wherein the dielectric layer has a thickness of 0.5˜15 nm; and a top electrode, comprising single layer or multiple layers of conductive layers and having a thickness more than 10 nm. | 09-18-2014 |
| 20140307363 | ADDITIVELY DEPOSITED ELECTRONIC COMPONENTS AND METHODS FOR PRODUCING THE SAME - An exemplary embodiment of the present invention provides a passive electrical component comprising a substrate, a first electrically conductive layer, a first dielectric layer, and a second electrically conductive layer. The first electrically conductive layer can be additively deposited on the substrate. The first dielectric layer can be additively deposited on the first conducive layer. The first dielectric layer can comprise a cross-linked polymer. The second electrically conductive layer can be additively deposited on the first dielectric layer. The resonant frequency of the passive electrical component can exceed 1 gigahertz. | 10-16-2014 |
| 20140321025 | ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREFOR - An electronic component including an electronic component element with an external electrode, a Ni plating film on the external electrode, and a Sn plating film covering the Ni plating film. The Sn plating film has Sn—Ni alloy flakes therein, the Sn—Ni alloy flakes are present in the range from a surface of the Sn plating film on the Ni plating film to 50% or less of the thickness of the Sn plating film, and when Sn is removed from the Sn plating film to leave only the Sn—Ni alloy flakes, an observed planar view of a region occupied by the Sn—Ni alloy flakes falls within the range from 15% to 60% of the observed planar region. | 10-30-2014 |
| 20140340816 | Electronic Part - An electronic part that includes an electronic part main body and an external electrode on the surface of the electronic part main body. The external electrode includes at least one alloy layer selected from among a Cu—Ni alloy layer and a Cu—Mn alloy layer, and a Sn-containing layer on the outer side of the alloy layer. The Sn-containing layer is the outermost layer of the external electrode. The Sn-containing layer is in contact with the alloy layer. | 11-20-2014 |
| 20140355174 | FILM CAPACITOR - A film capacitor includes a capacitor element including a dielectric film and a pair of electrode layers facing each other across the dielectric film, and a pair of end-surface electrodes provided on both ends of the capacitor element. At least one electrode layer of the pair of electrode layers mainly contains aluminum and further contains zinc and magnesium. A peak of an atomic concentration of magnesium of the electrode layer is located at a position closer to a surface of the electrode layer than a peak of an atomic concentration of zinc of the electrode layer. The film capacitor has a high humidity resistance. | 12-04-2014 |
| 20140376156 | GRAPHENE MOUNTED ON AEROGEL - An apparatus having reduced phononic coupling between a graphene monolayer and a substrate is provided. The apparatus includes an aerogel substrate and a monolayer of graphene coupled to the aerogel substrate. | 12-25-2014 |
| 20150318108 | IN-SITU OXIDIZED NiO AS ELECTRODE SURFACE FOR HIGH k MIM DEVICE - A high dielectric constant metal-insulator structure, including an electrode comprising NiO | 11-05-2015 |
| 20150371777 | MAGNETIC CAPACITOR STRUCTURES - The present disclosure provides a magnetic capacitor structure including a first electrode, a second electrode opposite to the first electrode, a dielectric layer disposed between the first electrode and the second electrode, a first magnetic layer disposed between the first electrode and the dielectric layer, a second magnetic layer disposed between the second electrode and the dielectric layer, a first oxide layer disposed between the first electrode and the first magnetic layer, and a second oxide layer disposed between the second magnetic layer and the dielectric layer. | 12-24-2015 |
| 20150380160 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF - There are provided a multilayer ceramic electronic component capable of preventing problems occurring due to a difference in sintering behavior between ceramic layers and internal electrodes and having excellent reliability, and a manufacturing method thereof. The multilayer ceramic electronic component may include a ceramic body including a plurality of ceramic layers; and internal electrodes disposed in the ceramic body. The internal electrodes may contain a conductive ceramic oxide. | 12-31-2015 |
| 20160005542 | HIGH K DIELECTRIC COMPOSITION FOR THERMOFORMABLE CAPACITIVE CIRCUITS - This invention is directed to a polymer thick film thermoformable dielectric composition with a high dielectric constant. Dielectrics made from the composition can be used in various electronic applications to enhance the performance of thermoformable capacitive circuits. | 01-07-2016 |
| 20160079001 | Graphene Electrode Based Ceramic Capacitor - A ceramic capacitor comprising at least a dielectric ceramic layer and at least a graphene electrode layer deposited on the ceramic layer, wherein the graphene electrode layer has a thickness no less than 2 nm and consists of a graphene material or a graphene composite material containing at least 0.1% by weight of a graphene material dispersed in a matrix material or bonded by a binder material, wherein the graphene material is selected from (a) a plurality of single-layer or multi-layer pristine graphene sheets having less than 0.01% by weight of non-carbon elements, or (b) one or a plurality of a non-pristine graphene material having at least 0.01% by weight of non-carbon elements, wherein the non-pristine graphene is selected from graphene oxide, reduced graphene oxide, graphene fluoride, graphene chloride, graphene bromide, graphene iodide, hydrogenated graphene, nitrogenated graphene, doped graphene, chemically functionalized graphene, or a combination thereof. | 03-17-2016 |
| 20160155568 | CAPACITOR ASSEMBLY | 06-02-2016 |
| 20160203910 | GRAPHENE MOUNTED ON AEROGEL | 07-14-2016 |
| 20190148067 | CAPACITOR HAVING BOTTOM ELECTRODE COMPRISING TiN | 05-16-2019 |
