Entries |
Document | Title | Date |
20080252359 | SWITCH CONTROL CIRCUIT FOR EXTERNAL HARD DISK - A switch control circuit includes a N-channel MOSFET, a first bleeder unit, a P-channel MOSFET and a second bleeder unit. The N-channel MOSFET has a first input terminal, a first output terminal and a first control terminal. The first output terminal is connected to ground. The first bleeder unit has a voltage-dividing function to the voltage from an input and output interface of a computer. The first bleeder unit is connected with the first control terminal and the first output terminal of the N-channel MOSFET. The P-channel MOSFET has a second input terminal, a second output terminal and a second control terminal. The second output terminal is connected to the working voltage terminal of the external hard disk. The second bleeder unit is connected between the external power supply and the first input terminal of the N-channel MOSFET. The P-channel MOSFET is connected with the first bleeder unit. | 10-16-2008 |
20090002055 | SEMICONDUCTOR DEVICE - A switching transistor has its drain and source respectively connected to a gate and a source of an output transistor for supplying output current to a load, and its gate connected to an internal grounding wire GW to be connected to a grounding terminal GND. A resistance element R | 01-01-2009 |
20090021294 | Driving device of voltage drive type semiconductor device - A driving device | 01-22-2009 |
20090058500 | BIDIRECTIONAL SWITCH MODULE - A first semiconductor element having a junction electrode to be connected to a first node of a bidirectional switch circuit is mounted on a first metal base plate to be a heat dissipation plate, and a second semiconductor element having a junction electrode to be connected to a second node of the bidirectional switch circuit is mounted on a second metal base plate to be a heat dissipation plate. The junction electrode of the first semiconductor element has the same potential as that of the first metal base plate, and the junction electrode of the second semiconductor element has the same potential as that of the second metal base plate. Also, the respective metal base plates and non-junction electrodes of the respective semiconductor elements are connected by metal thin wires, respectively, thereby configuring the bidirectional switch circuit. | 03-05-2009 |
20090058501 | SEMICONDUCTOR DEVICE - A semiconductor device includes an input terminal, a first aging device whose source is connected to the input terminal to turn on at τ | 03-05-2009 |
20090079490 | Circuit Configuration with an End Stage for Switching an Inductive Load - A circuit configuration includes an output stage having at least one inductive load and a switching transistor configuration for switching the at least one inductive load. A supply voltage has a first supply potential and a second supply potential for feeding the supply voltage to the output stage. A registering device registers a particular instance when a potential at a specific circuit node of the output stage is outside a potential range defined by the first and second supply potentials. | 03-26-2009 |
20090079491 | SWITCHING CIRCUIT HAVING LOW THRESHOLD VOLTAGE - A switching circuit for preventing malfunction of a switching device formed of a wide band-gap semiconductor used for switching a high-power main power supply includes a normally-off type FET having a gate electrode, a source electrode connected to the ground, and a drain electrode connected to a power supply potential Vdd, and a normally-on type FET having drain and source electrodes connected to the gate and source electrodes of the FET, respectively, and a gate electrode. In the absence of any power supply, the normally-on type FET turns on. As a result, the gate/source potential of FET attains to 0V, and FET is kept off. | 03-26-2009 |
20090102541 | SWITCHING CIRCUIT ARRANGEMENT - A switching circuit arrangement ( | 04-23-2009 |
20090108910 | Very low power consumption solid state relay - A normally closed solid state power relay with an optionally optically coupled input circuit at an input terminal with a driver circuit electrically coupled to input terminal to drive one or more a power transistors, preferably MOSFET transistors so that the power transistor is held in the on state by the driver when no voltage or a low level voltage is applied to the input terminal, and the power transistor is held in the off state by the driver when a high level voltage is applied to the input terminal. An energy storage device, a battery or capacitor, is coupled to the driver to powers the driver with the energy storage device being charged by energy from the input terminal when said input terminal when a high level voltage is applied to the input terminal. The energy storage device is charged by leakage current through a diode or through a resistor from the input circuit when the input circuit is in a high state. | 04-30-2009 |
20090108911 | ANALOG SWITCH - An analog signal is input to an input terminal. An analog signal is output via an output terminal. A first transistor is an N-channel MOSFET, and is provided between the input terminal and the output terminal. A first resistor is provided between the gate of the first transistor and a first fixed voltage terminal (power supply terminal), which sets the gate of the first transistor to a high-impedance state. | 04-30-2009 |
20090115490 | OPTICAL SEMICONDUCTOR RELAY DEVICE - A transient voltage occurring between output terminals during ON/OFF operation is reduced. There are provided a pair of input terminals IN | 05-07-2009 |
20090121776 | Bus switch and electronic switch - A bus switch for connecting and disconnecting a bus connection provided by a pair of buses includes a first switching element and a second switching element. The first switching element is coupled between an input terminal and an output terminal of a high-potential side bus of the pair of buses. The second switching element is coupled between an input terminal and an output terminal of a low-potential side bus of the pair of buses. The bus connection is connected when the first switching element and the second switching element are activated, and the bus connection is disconnected when the first switching element and the second switching element are deactivated. | 05-14-2009 |
20090128219 | SEMICONDUCTOR DEVICE, POWER SUPPLY DEVICE, AND INFORMATION PROCESSING DEVICE - A semiconductor device ( | 05-21-2009 |
20090128220 | ISOLATION CIRCUIT - An isolation circuit is provided. The isolation circuit is coupled between a master circuit and a slave circuit for isolating or conducting an inter integrated circuit (I2C) signal. While the master circuit has electricity and the slave circuit does not, the isolation circuit isolates the master circuit to prevent the I2C signal being transmitted to the slave circuit. While the master circuit and the slave circuit have electricity, the isolation circuit conducts the master circuit to transmit the I2C signal to the slave circuit. The present invention solves the signal isolation problem between the master and slave circuits, and also improves the operational stability of an I2C bus. | 05-21-2009 |
20090128221 | METAL-INSULATOR-METAL (MIM) SWITCHING DEVICES - A gated nano-electro-mechanical (NEM) switch employing metal-insulator-metal (MIM) technology and related devices and methods which can facilitate implementation of low-power, radiation-hardened, high-temperature electronic devices and circuits. In one example embodiment a gate electrode is configured as a cantilever beam whose free end is coupled to a MIM stack. The stack moves into bridging contact across a source and drain region when the applied gate voltage generates a sufficient electrostatic force to overcome the mechanical biasing of the cantilever beam. A second set of contacts can be added on the cantilever beam to form a complementary switching structure, or to a separate cantilever beam. The switching can be configured as non-volatile in response to stiction forces. NEM circuits provide a number of advantages within a variety of circuit types, including but not limited to: logic, memory, sleep circuits, pass circuits, and so forth. | 05-21-2009 |
20090167412 | GATE-CHARGE RETAINING SWITCH - The present invention discloses MOSFET or IGBT switch drive circuitry that uses the gate capacitance and the inherently high gate resistance of such switch devices to provide essentially bistable switching. Gate-charge is injected to enhance the switch device(s), invoking an ON state. Gate-charge is removed to deplete the switch device(s), invoking an OFF state. Circuitry is provided to effect charge removal immediately following charge injection, enabling relatively large switch devices to operate efficiently at several MHz. An arrangement for bipolar switch operation is provided. | 07-02-2009 |
20090212846 | Insulated gate field effect transistors - A field transistor is divided into a number of cells ( | 08-27-2009 |
20090278590 | POWER SEQUENCE CONTROL CIRCUIT, AND GATE DRIVER AND LCD PANEL HAVING THE SAME - A power sequence control circuit receives an input positive voltage and an input negative voltage. The control circuit includes a pull-up stage, having a first terminal receiving the input positive voltage, a second terminal coupled to a node, and a control terminal receiving feedback of an output positive voltage. A pull-down stage has a first terminal coupled to the node and a second terminal coupled to an output negative voltage. A current-limit switching unit has a first terminal receiving the input positive voltage, a second terminal outputting the output positive voltage, and a control terminal coupled to the node. When the output negative voltage decreases, and if the pull-down stage decreases a control voltage at the node and the control voltage is less than a threshold value, the current-limit switching unit is conducted to transmit the input positive voltage as the output positive voltage. | 11-12-2009 |
20090284303 | CONTROL CIRCUITS AND METHODS FOR CONTROLLING SWITCHING DEVICES - An integrated circuit is disclosed. The integrated circuit includes first and second transistors, first and second diodes, a first pin connected to the first transistor, a second pin connected to the second transistor, a third pin connected to the first diode, and a fourth pin connected to the second diode. | 11-19-2009 |
20090289692 | Nagative voltage switch - A negative voltage switch includes a switch unit, a voltage level converting circuit, and a discharge circuit. The switch unit has an input terminal for receiving a negative input voltage and an output terminal coupled to a load. The voltage level converting circuit receives a control signal and switches the switch unit to a first state or a second state according to the control signal. The switch circuit is switched to the first state if the level of the control signal is higher than a predetermined level and is switched to the second state if the level of the control signal is lower than the predetermined level, and the predetermined level is higher than the level of the negative input voltage. | 11-26-2009 |
20090295456 | SWITCHING CIRCUIT AND IMAGING APPARATUS UTILIZING THE SAME - In a complementary-MOSFET driving circuit for driving the charge multiplication gate of an EM-CCD, a ferrite bead is connected to a conduction-termination direction diode in parallel thereto, the conduction-termination direction diode being inserted into the gate electrodes of complementary MOSFETs in series therewith, the impedance of the ferrite bead at a switching frequency being lower than one-half of the gate-electrode impedance of the MOSFETs, a time during which the MOSFETs are brought into simultaneous conduction being shorter than ¼th of the switching period, the impedance of the ferrite bead at a frequency equivalent to ¼th of the switching period being higher than 2 times the gate-electrode impedance of the MOSFETs, a ferrite bead being connected to the drain electrodes of the complementary MOSFETs in series therewith, the impedance of the ferrite bead at the switching frequency being lower than one-half of the impedance of a capacitive load at the switching frequency, and the impedance of the ferrite bead, at a frequency equivalent to ¼th of the switching period being higher than 2 times the impedance of the capacitive load. | 12-03-2009 |
20090302927 | CONTROLLING A MOS TRANSISTOR - A device for controlling ( | 12-10-2009 |
20100007401 | SWITCH CONTROL CIRCUIT - A switch control circuit for controlling a bridge circuit comprising: an upper and a lower transistor, connected to a positive and a negative voltage, respectively, and comprising a flywheel diode connected in parallel with each transistor. An LC-circuit filters the voltage from the junction of the transistors. A drive circuit controls each transistor in order to switch off the corresponding switch element when a reference current has been obtained in the inductor and for switching on the corresponding switch element when the current in the inductor is essentially zero. A first timer circuit is arranged for preventing the on-switch of the switch element until a minimum time period has passed. | 01-14-2010 |
20100019829 | TURN ON-OFF POWER CIRCUIT FOR DIGITAL SYSTEMS - A turn-on circuit that is used to provide power to a system or other circuit when activated. The circuit is activated through depression of a momentary button or other similar device. The circuit is deactivated by a separate digital signal from said system or said other circuit and when deactivated no longer provides power to the system. | 01-28-2010 |
20100026372 | Power switch for transmitting a power source of low voltage between regular mode and deep-power-down mode - A low-voltage power switch includes a gate-controlled circuit and a switch. The gate-controlled circuit generates a control voltage lower than the voltage of ground according to a control signal. The switch includes a first end, a second end, and a control end. The first end of the switch is coupled to a power supply of a low voltage, the control end of the switch is coupled to the gate-controlled circuit for receiving the gate-controlled signal, and the second end of the switch couples the first end of the switch when the switch receives the gate-controlled signal for outputting the power supply of the low voltage. | 02-04-2010 |
20100085106 | Method for Operating a Converter Circuit with Voltage Boosting - Method for operating a converter circuit with voltage boosting with N half-bridges, which in each case can be connected by their center connection to a phase of an N-phase generator and at an end side are connected in parallel with a series circuit formed by two capacitances, wherein each half-bridge contains a Top switch and a Bot switch, in which, in a PWM method with a fixed period duration at the beginning of the period duration, all the TOP switches are simultaneously switched on for the duration of a TOP switched-on interval. After half the period duration all the BOT switches are simultaneously switched on for the duration of a BOT switched-on interval wherein the TOP switched-on interval, and the BOT switched-on interval amount at most to half the duration of the period. | 04-08-2010 |
20100109751 | HIGH-PERFORMANCE ANALOG SWITCH - Techniques for designing a high performance analog switch for use in electronic circuit applications. In one aspect, a variable bulk voltage generation module is provided to vary the bulk voltage of a transistor in the switch, such that the threshold voltage of the transistor is reduced during the on state. In another aspect, a pulling transistor is provided to pull a middle node of the switch to a DC voltage during the off state to further increase the isolation provided by the switch. | 05-06-2010 |
20100117714 | Semiconductor Integrated Circuit - A semiconductor integrated circuit that carries out intermittent operation, includes a processor block; an logical operation block other than a processor; a first switch part configured to supply a normal operation voltage to the logical operation block other than a processor; a second switch part configured to supply the normal operation voltage to the processor block; a third switch part configured to supply a data holding voltage lower than the normal operation voltage to the processor block; and a fourth switch part configured to be turned on, when the second switch means is turned off and the third switch means is turned on, and supply the data holding voltage to the processor block. | 05-13-2010 |
20100176868 | TIME INTERLEAVED TRACK AND HOLD - The present application relates to an apparatus comprising a first transistor element, with at least three terminals, and at least one switching unit. The present application relates also to a method, computer readable medium having a computer program stored thereon and a track and hold circuit comprising the apparatus. The apparatus comprises a first transistor element with at least three terminals, wherein a first terminal is supplied with a first voltage, and wherein a second terminal is supplied with a second voltage. The apparatus comprises a first switching unit, wherein a third terminal is connected to ground potential via the first switching unit. The transistor element comprises a predefined threshold voltage. The first voltage and the second voltage are predefined alternating voltages. The transistor element is configured such that in case a differential voltage between the first predefined alternating voltage and the second predefined alternating voltage is higher than the predefined threshold voltage and the first switching unit is not conductive the third terminal is charged with the first predefined alternating voltage. | 07-15-2010 |
20100194464 | Method and Circuit for Protecting a MOSFET - An integrated circuit includes a transistor. During operation a current slew-rate is determined based on a duration the transistor has been conducting and a current flowing through the transistor. The transistor can then be controlled to switch to its non-conducting state using the slew-rate. | 08-05-2010 |
20100214005 | Power Switches Having Positive-Channel High Dielectric Constant Insulated Gate Field Effect Transistors - Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed. | 08-26-2010 |
20100225378 | RADIO FREQUENCY SWITCHING CIRCUIT AND SEMICONDUCTOR DEVICE - A radio frequency switching circuit includes: a first switching element; a second switching element; a first biasing resistive element connected to a control terminal of the first switching element; a second biasing resistive element connected to a control terminal of the second switching element; and a control circuit which controls the first switching element and the second switching element according to a control signal being output from a control signal output terminal. C | 09-09-2010 |
20100225379 | ANALOG SWITCH - An analog switch including at least one first MOS transistor capable of transferring a signal from a first terminal to a second terminal; a connection circuit for bringing a substrate terminal of the first transistor to a voltage which is a function of the voltages of the first and second terminals; and a circuit for controlling a control voltage of the first transistor with the signal. | 09-09-2010 |
20100237929 | VOLTAGE GENERATING CIRCUIT FOR ELECTROSTATIC MEMS ACTUATOR - A plurality of capacitors each of which has a first and a second electrode. A plurality of first switches is connected between the first electrodes of the plurality of capacitors and a first power supply. A plurality of second switches is connected between the second electrodes of the plurality of capacitors and a second power supply. A plurality of resistances each of which is connected between the first electrode of one of the plurality of capacitors and the second electrode of another capacitor and which connect the plurality of capacitors in series, a voltage for driving an actuator being output from the last stage of the plurality of capacitors connected in series. | 09-23-2010 |
20100277219 | Clock Gater with Test Features and Low Setup Time - A clock gater circuit comprises a plurality of transistors having source-drain connections forming a stack between a first node and a supply node. A given logical state on the first node causes a corresponding logical state on an output clock of the clock gater circuit. In one embodiment, a first transistor of the plurality of transistors has a gate coupled to receive an enable input signal. A second transistor is connected in parallel with the first transistor, and has a gate controlled responsive to a test input signal to ensure that the output clock is generated even if the enable input signal is not in an enabled state. In another embodiment, the plurality of transistors comprises a first transistor having a gate controlled responsive to a clock input of the clock gater circuit and a second transistor having a gate controlled responsive to an output of a delay circuit. The delay circuit comprises at least one inverter, wherein an input of the delay circuit is the clock input, and wherein a first inverter of the delay circuit is coupled to receive a test input signal and is configured to force a first logical state on an output of the first inverter responsive to an assertion of the test input signal. | 11-04-2010 |
20100301922 | FIELD EFFECT TRANSISTOR WITH INTEGRATED GATE CONTROL AND RADIO FREQUENCY SWITCH - A field effect transistor (FET) including a monolithically integrated gate control circuit element can be included in, for example, a radio frequency switch circuit. For example, the FET can be included as a series and/or shunt FET of a radio frequency coplanar waveguide circuit. The widths of the series and shunt FETs of a switch circuit can be selected to provide a target isolation and/or a target insertion loss for a target operating frequency. | 12-02-2010 |
20100315152 | CONTROL METHOD FOR SOFT SWITCH CIRCUIT IN SWITCH POWER SUPPLY - The present invention relates to a control method for a soft switch circuit in a switch power supply, which controls first and second main power switch devices to be turned on and turned off constantly to generate an alternating main power filter current, and controls forward and backward auxiliary switch devices to be turned on and turned off to generate an intermittent alternating resonant current across a resonant branch in the same direction as the main power filter current to thereby achieve zero-voltage turn-on of the first and second main power switch devices; and further controls the forward and backward auxiliary switch devices to be turned on and turned off to generate compensation currents across the resonant branch in the opposite direction to the alternating main power filter current in at least a period of time during resting of the resonant current to thereby accomplish a charging and discharging process of resonant capacitors in a dead time. Thus, a freewheeling diode can be turned on normally, so that it is possible to avoid a damage to the devices due to an impact current and a spark voltage resulting at zero crossing of the current in the soft switch circuit. | 12-16-2010 |
20100321090 | SYSTEM AND CIRCUIT FOR A VIRTUAL POWER GRID - A system and circuit for virtual power grid is disclosed. In one embodiment, a switch system for a virtual power grid includes a first transistor for connecting a power supply to a node of a virtual power grid for an isolated region of circuitry via the first transistor upon a receipt of a first control signal to turn on the first transistor. The switch system further includes a second transistor for connecting the power supply to the isolated region of circuitry via the second transistor upon a receipt of a second control signal to turn on the second transistor. In addition, the switch system includes a self-timed enable module for generating and forwarding the second control signal when a voltage level at the node of the virtual power grid which is charged by the power supply via the first transistor reaches a threshold voltage. | 12-23-2010 |
20100327947 | Circuit and Method for Controlling the Secondary FET of Transformer Coupled Synchronous Rectified Flyback Converter - A secondary FET | 12-30-2010 |
20110012667 | Zero Power Drain Pushbutton On Switch - A normally-open pushbutton switch is coupled to and cooperates with a pair of MOSFETs to provide a power on switch function for a personal audio device that does not require power to be drawn from a power source to monitor the pushbutton switch while awaiting operation of the pushbutton switch to cause the personal audio device to be powered on. | 01-20-2011 |
20110025403 | SWITCH WITH IMPROVED BIASING - Switches with improved biasing and having better isolation and reliability are described. In an exemplary design, a switch is implemented with a set of transistors, a set of resistors, and an additional resistor. The set of transistors is coupled in a stacked configuration, receives an input signal, and provides an output signal. The set of resistors is coupled to the gates of the set of transistors. The additional resistor is coupled to the set of resistors and receives a control signal for the set of transistors. The resistors reduce signal loss through parasitic capacitances of the transistors when they are turned on. The resistors also help split the signal swing of the input signal approximately evenly across the transistors when they are turned off, which may improve reliability of the transistors. The switch may be used in a switchplexer, a power amplifier (PA) module, etc. | 02-03-2011 |
20110057714 | High Voltage Switch Utilizing Low Voltage MOS Transistors with High Voltage Breakdown Isolation Junctions - A high voltage switch having first and second states includes an input receiving an input voltage that is greater than a supply voltage. Each of first, second, and third MOS structures of a first conductivity type has a gate, a source, and a drain. The sources and drains of each of the MOS structures are electrically coupled in series between the input and ground. An output is electrically coupled to the input. When the switch is in the first state, the gate of the first MOS structure is pulled to ground, the gate of the second MOS structure is pulled to the supply voltage, and the gate of the third MOS structure is pulled to a voltage greater than the supply voltage and less than the input voltage. When the switch is in the second state, the gates of all of the MOS structures are pulled to the supply voltage. | 03-10-2011 |
20110057715 | HIGH BANDWIDTH SWITCH DESIGN - An analog switch includes a transistor having a current path between an input and an output, a gate coupled to a control terminal, and a bulk terminal, and a switched bulk control circuit coupled to the control terminal, the bulk terminal, and ground to reduce an equivalent capacitance seen from a source terminal or drain terminal of the transistor towards the bulk terminal of the transistor. The bulk control circuit includes an all-NMOS bulk control circuit if an NMOS transistor switch is used. | 03-10-2011 |
20110057716 | Circuit of Reducing Power Loss of Switching Device - A circuit is provided to reduce power loss on switching. A pair of auxiliary switching devices is switched on before a pair of switching devices. The switching devices are switched on after a corresponding capacitor to the auxiliary switching devices is discharged to zero. Thus, the power loss of the switching devices is reduced. | 03-10-2011 |
20110068852 | SEMICONDUCTOR DEVICE, POWER CIRCUIT, AND MANUFACTURING MKETHOD OF SEMICONDUCTOR DEVICE - The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer. | 03-24-2011 |
20110102055 | LOW-SIDE DRIVER HIGH-VOLTAGE TRANSIENT PROTECTION CIRCUIT - A low-side driver circuit includes a low-side driver integrated circuit and a controllable switch. The low-side driver integrated circuit is responsive to an on-off command input signal to selectively operate in an ON mode and an OFF mode. The controllable switch is responsive to the on-off command signal to selectively operate in a CLOSED mode and an OPEN mode. The low-side driver integrated circuit and the controllable switch are configured to simultaneously operate in the ON mode and the CLOSED mode, respectively, and in the OFF mode and the OPEN mode, respectively. During a voltage transient the potential will be realized across the controllable switch, thus protecting the lower voltage rated low-side integrated circuit. | 05-05-2011 |
20110121885 | Current reference source circuit that is independent of power supply - A current reference source circuit that is independent of power supply which is used for producing a current reference source that is independent of power supply, the circuit at least includes a resistor Rs and a mirror image circuit which is formed with four MOSs, M | 05-26-2011 |
20110128065 | LOAD DRIVING APPARATUS - Semiconductor relays switch power supplied from a power source to drive loads, and further detect current values of electric currents flowing through the loads. A control section intermittently turns ON the semiconductor relays via driving circuits, thereby limiting electric power consumption of the loads. Further, the control section calculates, based on the current values detected by the semiconductor relays, load electric power consumption of the loads, and estimated electric power consumption of the loads when the semiconductor relays are continuously ON, and allows a display section to display, as a value indicative of an energy-saving effect, an electric power amount difference i.e. a saved electric energy that is based on an electric power difference obtained by subtracting the load electric power consumption from the estimated electric power consumption. | 06-02-2011 |
20110133816 | SWITCH-BODY PMOS SWITCH WITH SWITCH-BODY DUMMIES - An analog sample-and-hold switch has parallel branches extending from an input node to an output node connected to a hold capacitor, each branch having a PMOS signal switch FET in series with a PMOS dummy FET. A sample clock controls on-off switching of the PMOS signal switch FETs, and an inverse of the sample clock controls a complementary on-off switching of the PMOS dummy FETs. A bias sequencer circuit biases the PMOS signal switch FETs and biases the PMOS dummy FETs, in a complementary manner, synchronous with their respective on-off states. The on-off switching of the PMOS dummy FETs injects charge cancelling a charge injection by the PMOS signal switch FETs, and injects glitches cancelling glitches injected by the PMOS signal switch FETs. | 06-09-2011 |
20110140763 | SPDT SWITCH FOR RADIO FREQUENCY SWITCHING AND METHOD FOR ENHANCING ISOLATION THEREOF - Provided is an SPDT switch having improved isolation characteristics in an RF band. The SPDT switch includes a serial switching unit, a current sink unit, a switching isolation unit, and a DC blocking unit. The serial switching unit includes first and second HBTs. The current sink unit sinks a current flowing from a common input terminal to each of first and second output terminals of the serial switching unit. The switching isolation unit causes an unselected output terminal of the first and second output terminals to be electrically isolated from the common input terminal when the serial switching unit operates. The DC blocking unit blocks a DC between the first HBT and the first output terminal and a DC between the second HBT and the second output terminal. Accordingly, it is possible to provide better insertion-loss and isolation characteristics in higher frequency bands than typical switches. | 06-16-2011 |
20110148505 | SOLID-STATE ALTERNATING CURRENT (AC) SWITCH - A solid-state alternating current (AC) switch provides for the sequential turn-on of the associated solid-state switches to reduce the generation of electromagnetic interference (EMI). The solid-state AC switch includes at least first and second solid-state switches connected in series between an AC input and an AC load. A zero-cross detector circuit monitors the AC input to determine zero-crossings associated with the monitored AC input. A controller turns on the first solid-state switch and the second solid-state switch according to a turn-on sequence in which the first transistor is turned ON during a detected zero-crossing window associated with the first transistor and the second transistor is subsequently turned ON during a detected zero-crossing associated with the second transistor. | 06-23-2011 |
20110148506 | INTEGRATION OF MOSFETS IN A SOURCE-DOWN CONFIGURATION - An output stage for a switched mode power supply has a high-side switch having a first power FET and a first speed-up FET monolithically integrated onto a first die. A low-side switch has a second power FET and a second speed-up FET monolithically integrated onto a second die. A semiconductor device has the power FET and the speed-up FET monolithically integrated in a “source-down” configuration. A method of operating an output stage of a switched mode power supply alternately turns on and off a high-side and a low-side switch and drives at least one of the switches with a speed-up FET monolithically integrated with the switch. | 06-23-2011 |
20110169549 | ELECTRONIC DEVICES AND COMPONENTS FOR HIGH EFFICIENCY POWER CIRCUITS - An electronic component includes a III-N transistor and a III-N rectifying device both encased in a single package. A gate electrode of the III-N transistor is electrically connected to a first lead of the single package or to a conductive structural portion of the single package, a drain electrode of the III-N transistor is electrically connected to a second lead of the single package and to a first electrode of the III-N rectifying device, and a second electrode of the III-N rectifying device is electrically connected to a third lead of the single package. | 07-14-2011 |
20110169550 | Method and Apparatus for Use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink - A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. | 07-14-2011 |
20110227630 | SWITCHING DEVICE FOR ELECTRIC CIRCUIT - A switching device has a main IGFET having a Schottky barrier diode D | 09-22-2011 |
20110227631 | Zero Power Drain Pushbutton Controls - A plurality of normally-open pushbutton switches are coupled to and cooperate with a pair of MOSFETs to provide each pushbutton switch of the plurality of pushbutton switches with a power on switch function for a personal audio device that does not require power to be drawn from a power source to monitor each of the pushbutton switches or to identify which of the pushbutton switches was manually operated to power on the personal audio device while awaiting operation of one of the pushbutton switches to cause the personal audio device to be powered on. | 09-22-2011 |
20110241756 | FAST TIME-TAGGED EVENT DETECTION USING RESISTIVE SWITCHING DEVICES - A system for event detection uses a resistive switching device to record a detected event. The resistive switching device has a resistance adjustable by means of an applied voltage. The operation of the resistive switching device is controlled by a controller, which is configured to apply a switching voltage to the resistive switching device at a start time, and turn off the switching voltage in response to an event signal indicative of occurrence of an event. The resistance value of the resistive switching device resulting from the application of the switching voltage is indicative of the detection of the event and also the time of the occurrence of the event. | 10-06-2011 |
20110248771 | INVERSE-MODE BIPOLAR TRANSISTOR RADIO-FREQUENCY SWITCHES AND METHODS OF USING SAME - The various embodiments of the present disclosure relate generally to inverse-mode Radio-Frequency (“RF”) switching circuits and methods of using the same. An embodiment of the present invention provides an inverse-mode RF switching circuit. The inverse-mode RF switching circuit comprises a bipolar transistor, a shunt element, a first RF channel, and a second RF channel. The bipolar transistor comprises a base, a collector, and an emitter, wherein the base and emitter are in electrical communication first via a base-emitter junction and second via an electrical connection element. The shunt element is in electrical communication with the collector. The first RF channel is in electrical communication with the base and emitter. The second RF channel is in electrical communication with the collector and the shunt element. The base-collector junction operates as a switching diode between the first RF channel and the second RF channel. | 10-13-2011 |
20110260775 | NANOSCALE VARIABLE RESISTOR/ELECTROMECHANICAL TRANSISTOR - A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e | 10-27-2011 |
20110260776 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In a power phase period when in normal operation, switch portions SW | 10-27-2011 |
20110273224 | COMPLEMENTARY HIGH VOLTAGE SWITCHED CURRENT SOURCE INTEGRATED CIRCUIT - A complementary high voltage switched current source circuit has a complementary current source pair, wherein a first of the current source pair is coupled to a positive voltage rail and a second of the current source pair is coupled to a negative voltage rail. A digital logic-level control interface circuit is coupled to the complementary current source pair and to the positive voltage rail and the negative voltage rail. A pair of high voltage switches is coupled to the complementary current source pair and the digital logic-level control interface circuit and controlled by the digital control interface circuit. | 11-10-2011 |
20110279167 | INPUT/OUTPUT CIRCUIT AND SYSTEM - An input/output circuit has a first load having one end coupled to a first standard voltage line, a first MOS transistor having a drain electrode coupled to another end of the first load, a second load having one end coupled to the first standard voltage line, a second MOS transistor having a drain electrode coupled to another end of the second load, a third MOS transistor having a source electrode each of which is coupled to source electrodes of the first and second MOS transistors, a first constant-current source coupled between the source electrode of the first MOS transistor and a second standard voltage line, and a second constant-current source coupled between the source electrode of the second MOS transistor and the second standard voltage line. The circuit size is reduced by transmitting a differential signal or a single-ended signal using a single input/output circuit. | 11-17-2011 |
20110291739 | MULTI-USE INPUT - Interfaces for coupling an electronic device to a power source control element and devices therefrom are provided. An interface includes a single node that is configured to receive a state signal and a serial communication signal from the electronic device. The interface also includes a switch circuit that is configured for providing a control signal for the power source control element based on the state signal, the switch signal capable of being influenced by the receipt of the state signal and the serial communication signal at the single node. The interface further includes a switch buffer circuit coupling the single node to the switch circuit, the switch buffer circuit comprising an impedance network configured to prevent the serial communication signal from activating the switch circuit. | 12-01-2011 |
20110298525 | High-Speed Current Switching - A method and circuit for high-speed current switching includes altering the operating voltage of the Current Source using a resistor in non-transmission mode, turning parasitic capacitive coupling into an advantage for faster settling of CS gate bias voltage. The resistor is designed to compensate for the voltage coupling when the Current Source is switched to Transmit mode. This greatly improves the settling time of current and bias voltage of the Current Source transistor without adding any complex circuit and saves 100% of power consumed in non-transmit mode. | 12-08-2011 |
20110304382 | Semiconductor device and data processing system - A semiconductor device comprises a first sense amplifier, first to third transmission lines, and first to third switches. The first and second transmission lines are connected to the first sense amplifier. The first and third switches control connections of the first to third transmission lines, and the second switch controls a connection between a fixed potential and third transmission line. When the second transmission line is not accessed, the first and third switches are brought into a non-conductive state and the second switch is brought into a conductive state, and the fixed potential is supplied to the third transmission line, thereby suppressing influence of the coupling noise between the transmission lines. | 12-15-2011 |
20120007657 | DISCONNECTOR SWITCH FOR GALVANIC DIRECT CURRENT INTERRUPTION - A disconnecting apparatus for direct current interruption between a direct current source and an electrical device, in particular between a photovoltaic generator and an inverter, has a current-conducting mechanical switching contact and semiconductor electronics connected in parallel with the switching contact. The semiconductor electronics are non-conducting when the switching contact is closed, wherein a control input of the semiconductor electronics is wired with the switching contact in such a way that, when the switching contact opens, an arc voltage generated as a result of an arc via the switching contact switches the semiconductor electronics to become conducting. | 01-12-2012 |
20120032728 | AUTO-OPTIMIZATION CIRCUITS AND METHODS FOR CYCLICAL ELECTRONIC SYSTEMS - Methods, systems, and devices are described for an adjustment module that interacts with a parameter detection module to provide a threshold value for initiating switching of a switching module in a cyclical electronic system. Aspects of the present disclosure provide a switching module used in conjunction with an inductor that is coupled with the switching module. The threshold voltage for switching the switching module may be adjusted to provide switching at substantially zero volts while maintaining sufficient energy in the inductor to drive the voltage at a switching element in the switching module to zero volts. Such auto-adjustment circuits may allow for enhanced efficiency in cyclical electronic systems. The output of an up/down counter may be used to set another parameter that effects the performance of the cyclical electronic system in order to enhance the performance of the cyclical electronic system. | 02-09-2012 |
20120032729 | METHOD AND APPARATUS FOR PROTECTING TRANSISTORS - The invention relates to a method and to an apparatus for protecting transistors (S | 02-09-2012 |
20120038410 | CIRCUIT AND METHOD FOR CHARACTERIZING THE PERFORMANCE OF A SENSE AMPLIFIER - An integrated circuit includes a sensing circuit, a fuse box, and a fuse bus decoder. The sensing circuit includes an output node, and the fuse box includes a plurality of switches coupled in series with a plurality of resistive elements. The fuse box is coupled to the output node of the sensing circuit from which the fuse box is configured to receive a current. The fuse bus decoder is coupled to the fuse box and includes at least one demultiplexer configured to receive a signal and in response output a plurality of control signals for selectively opening and closing the switches of the fuse box to adjust a resistance across the fuse box. A voltage of the output node of the sense amplifier is based on a resistance the fuse box and the current. | 02-16-2012 |
20120038411 | HIGH-FREQUENCY SWITCH - According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section. | 02-16-2012 |
20120056660 | SWITCH CIRCUIT - A signal line from a common terminal, which allows the insertion of a terminal of a cable for transmitting high-frequency signals or the insertion of a terminal of a cable dedicated to the transmission of audio signals, is branched into one line which is connected to one end of a high-frequency signal switch (USB switch) and the other line which is connected to one end of an audio signal switch (audio switch), respectively. A signal line from the other end of the high-frequency signal switch is connected to a target circuit. A signal line from the other end of the audio signal switch in a primary hierarchical position is branched into a plurality of lines, and the respective plurality of lines are connected to one end of audio signal switches (e.g., headphone switch and microphone switch) in a secondary hierarchical position. And the respective signal lines from the other end of the plurality of audio signal switches of secondary hierarchical position are connected to respective target circuits. | 03-08-2012 |
20120062309 | POWER SUPPLY CIRCUIT - A power supply circuit for protecting a battery from current leakage when the battery is not in use includes a control signal input circuit and a switch circuit. The control signal input circuit receives a first control signal from a chip and output a second control signal. The switch circuit receives the second control signal and turns on or off an electronic connection between the battery and the chip. Wherein when the battery is not in use and not being charged by the adaptor, there is a possibility of current leakage from the battery. In such case, the switch circuit turns off the electronic connection between the battery and the chip, and the battery does not provide power to the chip. | 03-15-2012 |
20120062310 | SYSTEM AND METHOD FOR CHARGE CONTROL IN A MEMS DEVICE - An electromechanical device is disclosed. The device includes a variable capacitor, and a switch circuit configured to pre-charge an input node with a pulse charge at said selected voltage level. The switch circuit includes only a first switch coupled to the variable capacitor and the first switch is configured to respond to an enable signal having a duration shorter than a mechanical time constant of the variable capacitor and the first switch is configured to apply the selected voltage level across the variable capacitor to cause the pulse charge to accumulate on the variable capacitor. | 03-15-2012 |
20120075004 | SWITCH AND METHOD OF CONTROL THE SAME - A switch includes, a common terminal, a first terminal, a second terminal, a first FET having a first source, a first drain and a first gate, one of the first source and the first drain being coupled to the common terminal, the other of the first source and the first drain being coupled to the first terminal, and a second FET having a second source, a second drain and a second gate, one of the second source and the second drain being coupled to the common terminal, the other of the second source and the second drain being coupled to the second terminal. The first FET is controlled to a turn-off state by an absolute voltage of the first gate which is smaller than an absolute voltage of the second gate to control a turning-off state for the second transistor. | 03-29-2012 |
20120086499 | LOW LEAKAGE DYNAMIC BI-DIRECTIONAL BODY-SNATCHING (LLDBBS) SCHEME FOR HIGH SPEED ANALOG SWITCHES - A bidirectional switch device includes a main pass field effect transistor (FET) connected to an input node and an output node. A body region of the first main pass transistor is tied to a voltage substantially halfway between the voltage at the input node side of the first main pass transistor and the voltage at the output node side of the transistor when the first main pass transistor is in an ON state. | 04-12-2012 |
20120119816 | VARIABLE-WIDTH POWER GATING MODULE - A semiconductor device includes a primary voltage rail, a secondary voltage rail, a plurality of transistors coupled between the primary and secondary voltage rails, and control logic operable to enable a first subset of the plurality of transistors to couple the primary voltage rail to the secondary voltage rail. During a steady state condition, the first subset comprises less than all of the plurality of transistors. | 05-17-2012 |
20120119817 | POWER CONTROL MODULE - A power control module including a socket, a switch circuit and an interface control circuit is provided. A plug is adapted to be inserted into the socket, and the socket has a positive terminal, a first negative terminal and a second negative terminal. When the plug is inserted into the socket, a negative terminal of the plug sequentially contacts the first negative terminal and the second negative terminal. The switch circuit receives a power voltage through the positive terminal. The interface control circuit determines whether to generate a switching signal to the switch circuit according to a voltage level of the second negative terminal. When receiving the switching signal, the switch circuit outputs the power voltage. | 05-17-2012 |
20120133421 | POWER SUPPLY SWITCH APPARATUS - A power supply switch apparatus includes a main outlet, first and second load outlets, a manual switch, and first and second electronic switches. The positive terminal of the main outlet is connected to the positive terminal of the first load outlet and connected to the second terminal of the first electronic switch. The third terminal of the first electronic switch is connected to the positive terminal of the second load outlet. The first terminal of the first electronic switch is connected to the second terminal of the second electronic switch and connected to a voltage terminal through a first resistor. The third terminal of the second electronic switch is grounded. The first terminal of the second electronic switch is connected to the voltage terminal through the manual switch and a second resistor in that order, and grounded through a third resistor. | 05-31-2012 |
20120161851 | HIGH BANDWIDTH SWITCH DESIGN - An analog switch includes a transistor having a current path between an input and an output, a gate coupled to a control terminal, and a bulk terminal, and a switched bulk control circuit coupled to the control terminal, the bulk terminal, and ground to reduce an equivalent capacitance seen from a source terminal or drain terminal of the transistor towards the bulk terminal of the transistor. The bulk control circuit includes an all-NMOS bulk control circuit if an NMOS transistor switch is used. | 06-28-2012 |
20120169398 | Method and Apparatus for Use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink - A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOT MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime. | 07-05-2012 |
20120206187 | SEMICONDUCTOR DEVICE - A semiconductor device that makes isolation circuits unnecessary and that also resolves the problem of through-current flowing during power supply shutdown transitions and during power supply recovery and that even flows between the regions during power shutdown. A semiconductor device of the present invention including a first power supply line, and a second power supply line coupled to a first power supply line by way of a first switch, a macro cell containing a macro cell core coupled to the second power supply line, and a third power supply line coupled by way of a second switch to a first power supply line, and a circuit block coupled to the third power supply line and also coupled to at least either the macro cell core input or output; and the second power supply line is coupled to the third power supply line. | 08-16-2012 |
20120242397 | POWER DOWN ENABLED ANALOG SWITCH - This document discusses, among other things, apparatus and methods for passing a signal in a power down state. An example switch device can include a first depletion-mode transistor configured to pass an analog signal between a first node and a second node in a first state and to isolate the first node from the second node in a second state, a control circuit coupled to a control node of the first depletion-mode transistor and configured to isolate the control node from a first supply input in the first state and to couple the control node to the first supply input in the second state, and a tracking circuit configured to couple the control node of the first depletion-mode transistor to the first node during the first state and to isolate the control node of the first depletion-mode transistor from the first node in the second state. | 09-27-2012 |
20120249215 | SWITCH CIRCUIT - A switch circuit for switching between a first storage and a second storage. The switch circuit includes a switch, a control circuit, a switch control chip, and a processing chip. The control circuit is connected to the switch, the first storage, and the second storage. The control circuit either transmits power from a power supply to the first or second storage according to the switch. The switch control chip is connected to the control circuit. The processing chip is connected to the switch control chip. The control circuit controls the switch control chip to either transmit data between the processing chip and the first storage in response to the power supply powering the first storage, or transmit data between the processing chip and the second storage in response to the power supply powering the second storage. | 10-04-2012 |
20120249216 | HIGH VOLTAGE SWITCH CONFIGURATION - A High Voltage switch configuration having an input terminal which receives an input signal and an output terminal which issues an output signal to a load. The High Voltage switch configuration comprises at least a first and a second diode, being placed in antiseries between said input and output terminals and having a pair of corresponding terminals in common, in correspondence of a first internal circuit node. | 10-04-2012 |
20120256678 | Variable Impedance Single Pole Double Throw CMOS Switch - A single pole double throw (SPDT) semiconductor switch includes a series connection of a first transmitter-side transistor and a first reception-side transistor between a transmitter node and a reception node. Each of the two first transistors is provided with a gate-side variable impedance circuit, which provides a variable impedance connection between a complementary pair of gate control signals. Further, the body of each first transistor can be connected to a body bias control signal through a body-side variable impedance circuit. In addition, the transmitter node is connected to electrical ground through a second transmitter-side transistor, and the reception node is connected to electrical ground through a second reception-side transistor. Each of the second transistors can have a body bias that is tied to the body bias control signals for the first transistors so that switched-off transistors provide enhanced electrical isolation. | 10-11-2012 |
20120262221 | LOW VOLTAGE ISOLATION SWITCH, IN PARTICULAR FOR A TRANSMISSION CHANNEL FOR ULTRASOUND APPLICATIONS - A low voltage isolation switch is coupled between an input terminal suitable for receiving a high voltage signal and an output terminal suitable for transmitting this high voltage signal to a load. The isolation switch includes a first driving transistor coupled between a first reference terminal and an intermediate node, a second driving transistor coupled between the intermediate node and the second reference terminal, a control transistor connected across a diode block coupled between the input and output terminals. The control transistor has a control terminal connected to the intermediate node through a low voltage decoupling block that includes first and second substrate terminals, first and second parasitic capacitive element connected to these first and second substrate terminals, and first and second decoupling transistors coupled in parallel to each other and having control terminals connected to the first and second parasitic capacitive elements, respectively. | 10-18-2012 |
20120299636 | Power gating circuit - A functional circuit is coupled to a power supply conductor by at least one power gating transistor. A switching device applies a gate drive voltage to a gate terminal of the power gating transistor via a resistive element. The power gating transistor provides a Miller capacitance between its drain and gate terminals. The Miller capacitance, the resistance of the resistive element, and the drive strength of the switching device are configured such that, in response to the switching device switching the gate drive voltage to allow more current to pass through the power gating transistor, the Miller capacitance provides a feedback mechanism competing against the switching device to reduce the slew rate of the gate drive voltage such that the current passing between the power gate supply conductor and the functional circuit through the power gating transistor is less than the saturation current of the power gating transistor. | 11-29-2012 |
20120306561 | I/O CIRCUIT AND INTEGRATED CIRCUIT - An I/O circuit includes: a boost module, a P path, an N path, a PMOS driving transistor, and an NMOS driving transistor, where: a rising edge of an output signal of a non-inverting port of the boost module is slower than a falling edge; a grid electrode of the PMOS driving transistor is connected to the non-inverting port of the boost module via the P path and a grid electrode of the NMOS driving transistor is connected to an inverting port of the boost module via the N path; and the P path includes an odd number of inverters connected in series and the N path includes an even number of inverters connected in series. The present invention also provides an integrated circuit. | 12-06-2012 |
20120306562 | MEMS DISPLAY PIXEL CONTROL CIRCUITS AND METHODS - This disclosure provides novel latching circuits, and pixel circuits and display devices that include such latching circuits. The latches herein include a switch positioned on an inverter coupling interconnect which couples two cross-coupled inverters of the latch. The switch is configured to control a passage of a current between the first and second inverters. By switching the switch OFF at a time a data voltage is transferred to the inverters, any leak current between the inverters can be interrupted. As a result, a malfunctioning of the data latch is prevented. | 12-06-2012 |
20120306563 | SWITCHING CIRCUIT - A switching circuit according to one embodiment is a switching circuit including at least one semiconductor switch element having an input, output, and a common terminals, a pulse-like signal being applied between the input and common terminals to switch a current between the output and common terminals. The switching circuit further includes a capacitance suppression element section connected at least one of between the input and output terminals, between the input terminal common terminals, and between the output and common terminals. The capacitance suppression element section reduces a parasitic capacitance between the terminals of the semiconductor switch element where the capacitance suppression element section is connected to less than that obtained when the capacitance suppression element section is not connected at a frequency N times (N is an integer of 1 or more) as high as a clock frequency of the pulse-like signal. | 12-06-2012 |
20120313689 | LOW VOLTAGE ISOLATION SWITCH, IN PARTICULAR FOR A TRANSMISSION CHANNEL FOR ULTRASOUND APPLICATIONS - A low voltage isolation circuit is coupled between an input terminal for receiving a high voltage signal and an output terminal for transmitting the high voltage signal to a load. The isolation circuit includes a driving block; having a first driving transistor coupled between a first voltage reference and an intermediate node and a second driving transistor coupled between the intermediate node and a second voltage reference; an isolation block connected between the input and output terminals and, through a protection block to the intermediate node. The protection block includes first and second protection transistors (MD | 12-13-2012 |
20130002340 | STAGE CIRCUIT AND SCAN DRIVER USING THE SAME - A stage circuit is capable of concurrently or progressively supplying scan signals. The stage circuit includes a progressive driver including a first transistor and a second transistor, and a concurrent driver including an 11 | 01-03-2013 |
20130015905 | Nested Composite Switch - There are disclosed herein various implementations of nested composite switches. In one implementation, a nested composite switch includes a normally ON primary transistor coupled to a composite switch. The composite switch includes a low voltage (LV) transistor cascoded with an intermediate transistor having a breakdown voltage greater than the LV transistor and less than the normally ON primary transistor. In one implementation, the normally on primary transistor may be a group III-V transistor and the LV transistor may be an LV group IV transistor. | 01-17-2013 |
20130033301 | STRUCTURE OF OUTPUT STAGE - A structure of an output stage, and the structure includes a first electrode, a second electrode, a third electrode, a plurality of first auxiliary electrodes, a plurality of second auxiliary electrodes, a plurality of third auxiliary electrodes, a plurality of fourth auxiliary electrodes, a first switching unit, and a second switching unit. Wherein, a plurality of first currents flow through the turned-on first switching unit, and a first flowing direction of the first currents in the turned-on first switching unit is from the first electrode to the second electrode. A plurality of second currents flow through the turned-on second switching unit, and a second flowing direction of the second currents in the turned-on second switching unit is from the second electrode to the third electrode. | 02-07-2013 |
20130063200 | CMOS CIRCUIT AND SEMICONDUCTOR DEVICE - A CMOS circuit and a semiconductor device having small leakage current and a low threshold voltage, and which is operated at high speed and with a small voltage amplitude, including an output stage circuit having MOSTs configured such that when their gates and sources are respectively set to an equal voltage, subthreshold leakage currents substantially flow between their drains and sources, and upon deactivation, a voltage is applied to the gate of each of the MOSTs to cause a reverse bias to be applied between the gate and source of the MOST. Upon activation of the circuit, the MOST is held in a reverse bias state or controlled to a forward bias state according to an input voltage. | 03-14-2013 |
20130093498 | MATRIX-STAGES SOLID STATE ULTRAFAST SWITCH - A semiconductor switching device for switching high voltage and high current. The semiconductor switching device includes a control-triggered stage and one or more auto-triggered stages. The control-triggered stage includes a plurality of semiconductor switches, a breakover switch, a control switch, a turn-off circuit, and a capacitor. The control-triggered stage is connected in series to the one or more auto-triggered stages. Each auto-triggered stage includes a plurality of semiconductor switches connected in parallel, a breakover switch, and a capacitor. The control switch provides for selective turn-on of the control-triggered stage. When the control-triggered stage turns on, the capacitor of the control-triggered stage discharges into the gates of the plurality of semiconductor switches of the next highest stage to turn it on. Each auto-triggered stage turns on in a cascade fashion as the capacitor of the adjacent lower stage discharges or as the breakover switches of the auto-triggered stages turn on. | 04-18-2013 |
20130099850 | VOLTAGE SWITCH CIRCUIT - A voltage switch circuit uses PMOS transistors to withstand high voltage stress. Consequently, the NMOS transistors are not subject to high voltage stress. The lightly-doped PMOS transistors are compatible with a logic circuit manufacturing process. Consequently, the voltage switch circuit may be produced by a logic circuit manufacturing process. | 04-25-2013 |
20130099851 | SEMICONDUCTOR DEVICE HAVING STRAIN MATERIAL - A semiconductor device having strain material is disclosed in a particular embodiment, the semiconductor device includes a first cell including a first gate between a first drain and a first source. The semiconductor device also includes a second cell adjacent to the first cell. The second cell includes a second gate between a second drain and a second source. The semiconductor device further includes a shallow trench isolation area between the first source and the second source. A first amount of strain material over the first source and over the second source is greater than a second amount of strain material over the first drain and over the second drain. | 04-25-2013 |
20130106494 | Power Switch Acceleration Scheme for Fast Wakeup | 05-02-2013 |
20130127518 | CONTROL CIRCUIT AND ELECTRONIC DEVICE - A control circuit includes: a first switching element having a source, a gate, and a drain; a battery configured to supply a voltage to the gate through a second switching element; a PWM signal generator circuit configured to supply a PWM signal to the gate through a third switching element; and a gate control circuit configured to, under a power-off condition, turn on the second switching element to supply the voltage of the battery to the gate and turns off the third switching element, and configured to under a power-on condition, turn on the third switching element to supply the PWM signal voltage to the gate and turns off the second switching element. | 05-23-2013 |
20130127519 | Auto Switch Mosfet - In one preferred form shown in | 05-23-2013 |
20130154718 | Fully Capacitive Coupled Input Choppers - A method of differential signal transfer from a differential input Vinp and Vinn having a common mode input voltage that can be higher than the power supply voltage by providing an input chopper having Vinp and Vinn as a differential input, providing an output chopper, capacitively coupling a differential output Voutp and Voutn of the input chopper to a differential input of the output chopper, capacitively coupling a clock to the input chopper and coupling the clock to the output chopper, the clock having a first phase and a second phase opposite from the first phase, the first phase being coupled to the gates of the first and second transistors and the second phase being coupled to the gates of the third and fourth transistors, and providing protection of the gates of the first through fourth transistors from excessive voltages. Various embodiments are disclosed. | 06-20-2013 |
20130162327 | METHOD AND SYSTEM FOR REDUCTION OF OFF-CURRENT IN FIELD EFFECT TRANSISTORS - A method for reducing an off-current of a field effect transistor in which two electrodes of the field effect transistor have fixed voltage values and the rest electrode has an alternating voltage value by an AC voltage pulse generator to form an off-stress near source and drain junctions in turn. | 06-27-2013 |
20130187703 | SYMMETRICALLY OPERATING SINGLE-ENDED INPUT BUFFER DEVICES AND METHODS - Embodiments are described including those pertaining to an input buffer having first and second complementary input terminals. One example buffer has a symmetrical response to a single input signal applied to the first input terminal by mimicking the transition of a signal applied to the second input terminal in the opposite direction. The buffer includes two amplifier circuits structured to be complementary with respect to each other. Each of the amplifier circuits includes a first transistor having a first input node that receives an input signal transitioning across a range of high and low voltage levels, and a second transistor having a second input node that receives a reference signal. The first input node is coupled to the second transistor through a capacitor to mimic the second input node transitioning in the direction opposite to the transition of the input signal. | 07-25-2013 |
20130200941 | CASCADED HIGH VOLTAGE SWITCH ARCHITECTURE - Devices and circuits for high voltage switch (HVS) configurations. HVS may pass high voltage without suffering voltage drops. HVS may also guarantee safe operations for p-mos transistors. HVS may not sink current in its steady state. Further, HVS may select between two or more different voltage values to be passed onto the output node even after the high voltage has already been fully developed on the high voltage supply line. | 08-08-2013 |
20130214846 | SEMICONDUCTOR DEVICE - The disclosed invention provides a semiconductor device capable of suitably controlling the level of an enable signal to resolve NBTI in a PMOS transistor. An input node receives an input signal alternating between high and low levels during normal operation and fixed to a high level during standby. A detection unit receives a signal through the input node and outputs an enable signal. The detection unit sets the enable signal to a low level upon detecting that the input node remains at a high level for a predetermined period. A signal transmission unit includes a P-channel MOS transistor and transmits a signal input to the input node according to control by the enable signal. | 08-22-2013 |
20130257515 | Method for Controlling a Semiconductor Component - A transistor monolithically integrated in a semiconductor body includes a first sub-transistor and a second sub-transistor that both include a first and second load contacts and a control contact for controlling an electric current through a load path. The first load contact of the first sub-transistor is electrically connected to the first load contact of the second sub-transistor and the second load contact of the first sub-transistor is electrically connected to the second load contact of the second sub-transistor. A control circuit is configured to cause the first sub-transistor to switch from a first state to a second state at a first point of time and to cause the second sub-transistor to switch from the first state to the second state at a second point of time subsequent to the first point of time. | 10-03-2013 |
20130257516 | SWITCH CIRCUIT AND ELECTRONIC DEVICE USING THE SAME - A switch circuit and an electronic device using the same include a power switch transistor, a controlling circuit, a regulated capacitor, and a capacitor. The power switch transistor is connected between an input and an output of the switch circuit. An output of the controlling circuit is connected to a controlling electrode of the power switch transistor and outputs pulse width modulation (PWM) signals to turn the power switch transistor on and off. The regulated capacitor is connected between an output of the switch circuit and ground. The capacitor is connected between an output of the controlling circuit and ground for increasing an inclination of a rising edge and a falling edge of PWM signals to slow down the speed of switching the power switch transistor on and off, thereby making the regulated capacitor charge slowly and the output voltage of the switch circuit stable. | 10-03-2013 |
20130265097 | SEMICONDUCTOR INTEGRATED CIRCUIT - An aspect of the present embodiment, there is provided a semiconductor integrated circuit, including a first transistor configured to switch whether or not a first node electrically connects to a second node, and a switch control circuit configured to supply higher potential to a substrate potential of the first transistor in a state of turning of the first transistor, when at least one of potentials of the first node and the second node is equal to or higher than a predetermined potential which is higher than a potential of a power supply. | 10-10-2013 |
20130265098 | SOLID-STATE RELAY - A solid-state relay is provided, which includes a first transistor, a second transistor, a first transmission circuit, and a second transmission circuit. A gate of the first transistor is connected to one of a source and a drain of the second transistor, one of a source and a drain of the first transistor is connected to a first terminal, and the other of the source and the drain of the first transistor is connected to a second terminal. The first transmission circuit supplies a first signal to the gate of the first transistor. The second transmission circuit supplies a second signal to a gate of the second transistor. The first terminal is connected to the second terminal when the first transistor is turned on by the first signal. | 10-10-2013 |
20130265099 | NANOSCALE VARIABLE RESISTOR/ELECTROMECHANICAL TRANSISTOR - A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e | 10-10-2013 |
20130265100 | LOW VOLTAGE ISOLATION SWITCH, IN PARTICULAR FOR A TRANSMISSION CHANNEL FOR ULTRASOUND APPLICATIONS - A low voltage isolation switch is suitable for receiving from a connection node a high voltage signal and transmitting said high voltage signal to a load via a connection terminal. The isolation switch includes a driving block connected between first and second voltage reference terminals and including a first driving transistor coupled between the first voltage reference (Vss) and a first driving circuit node and a second driving transistor coupled between the driving circuit node and the second supply voltage reference. The switch comprises an isolation block connected to the connection terminal (pzt), the connection node, and the driving central circuit node and including a voltage limiter block, a diode block and a control transistor. The control transistor is connected across the diode block between the connection node and the connection terminal and has a control terminal connected to the driving central circuit node. | 10-10-2013 |
20130300492 | SWITCHING POWER CAPABLE OF AVOIDING COUPLING EFFECTS - A switching power capable of avoiding coupling effects is provided. The switching power comprises a driving loop. The driving loop comprises the substrate end and the gate end of a power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and a controlling gate, and the controlling gate is connected to the gate end of the power MOSFET and the substrate end of the power MOSFET is connected to the controlling gate. The switching power provided by the present can avoid the coupling effect of the driving loop and the power stage loop at the common source pin, thereby reducing the switching power losses and improving the efficiency of the switching power. | 11-14-2013 |
20130300493 | ANALOG SWITCHING CIRCUIT, ASSOCIATED CONTROL CIRCUIT AND METHOD - The present invention discloses an analog switching circuit having a first terminal receiving an input signal, a second terminal providing an output signal and a control terminal receiving a switching control signal. The analog switching circuit has a first logic circuit providing a first control signal and a second control signal based on the switching control signal; an NMOS and a PMOS coupled between the first terminal and the second terminal, and controlled by the first control signal and the second control signal respectively; a first control circuit controls the backgate voltage of the NMOS based on the input signal and the switching control signal; and a second control circuit controls the backgate voltage of the PMOS based on the input signal and the switching control signal. | 11-14-2013 |
20130307608 | REFERENCE VOLTAGE SUPPLY CIRCUIT - A reference voltage generator includes a first transistor and a second transistor coupled in series between a current supply and ground. Gate insulating films of the first transistor and the second transistor are made of the same type of film with the same thickness. Impurities contained in gate electrodes of the first transistor and the second transistor have different conductivity types, or have the same conductivity type and different concentrations. The first transistor has a greater gate width than the second transistor. The first transistor and the second transistor operate in a subthreshold region when a reference voltage is output outside. | 11-21-2013 |
20130314146 | BINARY CONTROL ARRANGEMENT AND METHOD OF MAKING AND USING THE SAME - The present description relates to a semiconductor device including an array of two or more switching elements and a controller electrically connected to the array of switching elements. At least one switching element of the array of switching elements has a different electrical resistance than at least another switching element of the array of switching elements. The controller is configured to generate and transmit at least one coarse tuning signal and at least one fine tuning signal. The array of switching elements is configured to alter an electrical resistance of the array of switching elements in response to the at least one coarse tuning signal and the at least one fine tuning signal. The present description also includes a method of making a semiconductor device and a method of using a semiconductor device. | 11-28-2013 |
20140002174 | METHOD AND APPARATUS FOR DRAIN SWITCHING WITH REPLICATION LOOP FOR FAST LED TURN ON TIME | 01-02-2014 |
20140002175 | Architecture for Single-Stepping in Resonant Clock Distribution Networks | 01-02-2014 |
20140015593 | RF Switch, Mobile Communication Device and Method for Switching an RF Signal - An RF switch includes a switchable RF transistor. The switchable RF transistor includes a stripe of a plurality of adjacent RF transistor fingers and at least one non-switchable dummy transistor that is arranged at an end of the stripe of the switchable RF transistor. | 01-16-2014 |
20140015594 | SWITCHING CELLS USING MOSFET POWER TRANSISTORS - The switching cell ( | 01-16-2014 |
20140035657 | PREVENTING REVERSE CONDUCTION - In one embodiment, a circuit includes a resistance including first and second terminals. The first terminal of the resistance is coupled to ground. The circuit also includes a first switching element including first, second, and third terminals. The first terminal of the first switching element is coupled to an output of an integrated circuit and the second terminal of the first switching element is coupled to a voltage supply of the integrated circuit. Additionally, the circuit includes a second switching element including first, second, and third terminals. The first terminal of the second switching element is coupled to an enable input of the integrated circuit. Furthermore, the second terminal of the second switching element is coupled to the third terminal of the first switching element and to the second terminal of the resistance. Moreover, the third terminal of the second switching element is coupled to the ground. | 02-06-2014 |
20140043092 | INPUT SWITCHES IN SAMPLING CIRCUITS - A switch may include a MOS transistor alternatively operating in an ON phase and an OFF phase, a first voltage level shifter, and a second voltage level shifter. The MOS transistor may include a source for receiving an input signal, a drain for connecting to a load, and a gate. The first voltage level shifter may be selectively coupled between the source and the gate during the ON phase, and the second voltage level shifter may be selectively coupled between the gate and the source during the OFF phase. | 02-13-2014 |
20140097884 | INTEGRATED CIRCUIT DEVICE AND METHOD OF IMPLEMENTING POWER GATING WITHIN AN INTEGRATED CIRCUIT DEVICE - An integrated circuit device comprises at least one power gating arrangement, including at least one gated power domain and at least one power gating component operably coupled between at least one node of the at least one gated power domain and at least a first power supply node. The at least one power gating component is arranged to selectively couple the at least one node of the at least one gated power domain to the at least first power supply node. | 04-10-2014 |
20140118056 | SEMICONDUCTOR DEVICE - A semiconductor device includes a control section, a first arm, and a second arm; and has an H-bridge circuit to supply an input current supplied from a power source to an output terminal as a reversible electric current on the basis of a control signal outputted from the control section and a reverse-connection-time backflow prevention circuit to prevent an electric current in a direction opposite to the direction of the input current from being supplied to the H-bridge circuit. The first arm is formed over a first island. The second arm is formed over a second island. The control section and the reverse-connection-time backflow prevention circuit are formed over a third island. | 05-01-2014 |
20140118057 | Half Bridge Flyback and Forward - A circuit includes a transformer having a first winding and a second winding, an input connected to a first terminal of the first winding, a first power transistor and a second power transistor. The first power transistor has a source, a gate, and a drain connected to a second terminal of the first winding. The second power transistor has a source connected to ground, a gate connected to a pulsed voltage drive source and a drain connected to the source of the first power transistor. The gate of the first power transistor is connected to a DC source or the same pulsed voltage drive source as the gate of the second power transistor. The first power transistor actively turns off independent of load current. Other circuit embodiments and corresponding load switching methods are also provided. | 05-01-2014 |
20140145783 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes an output MOS transistor and a back gate control circuit. The output MOS transistor includes a first electrode connected to a power supply terminal and a second electrode connected to an output terminal. The output MOS transistor is configured to turn on and off to cause communications to be performed with another semiconductor integrated circuit connected to the output terminal. The back gate control circuit is configured to control an electric potential at a back gate of the output MOS transistor so that a current path between the power supply terminal and the output terminal at a time when a power supply connected to the power supply terminal is turned off is interrupted. | 05-29-2014 |
20140159798 | ARRAY SUBSTRATE, DRIVING METHOD, AND DISPLAY DEVICE - The present invention provides an array substrate, a driving method and a display device. The array substrate comprises a plurality of gate lines. A first gate line of the two adjacent gate lines is coupled to a first switch unit and a second gate line is coupled to a second switch unit. The first switch unit and the second switch unit are coupled to a control line, and are coupled to a gate drive output channel. The second switch unit is turned off when the first switch unit is turned on under control of the control line, and the first switch unit is turned off when the second switch is turned on under control of the control line. According to the present invention, it is able to effectively reduce the number of the gate drive ICs and thereby to reduce the cost. | 06-12-2014 |
20140184309 | HIGH-VOLTAGE ELECTRICAL SWITCH BY SERIES CONNECTED SEMICONDUCTOR SWITCHES - A high voltage electrical switch including: a plurality of series connected semiconductor switches; a plurality of rectifiers wherein each rectifier is connected to a semiconductor switch control input of one of the semiconductor switches; a radio frequency signal generator; and a plurality of galvanic isolators, wherein each galvanic isolator connects the radio frequency signal generator to one of the plurality of rectifiers, wherein the plurality of semiconductor switches are isolated from one another. | 07-03-2014 |
20140184310 | SWITCH ARCHITECTURE AT LOW SUPPLY VOLTAGES - A sampled CMOS switch includes first and second NMOS devices in series between input and output nodes. The first and second NMOS devices are activated by a sample signal. A pair of low-voltage DEPMOS devices is connected in a “T” configuration between the input and output nodes. The low-voltage DEPMOS devices are activated by an inverted sample signal. A feedback circuit includes the DEPMOS devices together with a third high-voltage NMOS device and a current source. The third NMOS device is controlled by a signal on the input node. A switch switchably connects an analog voltage source to a source of the third NMOS device and gates of the DEPMOS devices in accordance with a phase of an inverted sample signal. The construction of the sampled CMOS switch enables the protection of the gate oxide insulation of the low-voltage DEPMOS transistors from high voltage damage. | 07-03-2014 |
20140191792 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD AND OPERATING METHOD FOR THE SAME - A semiconductor device and a manufacturing method and an operating method for the same are provided. The semiconductor device comprises a substrate, a deep well, a first well, a first doped electrode region, a second doped electrode region and a high threshold voltage channel region. The substrate has a first type conductivity. The deep well is formed in the substrate and has a second type conductivity opposite to the first conductivity. The first well is formed in the deep well and has at least one of the first type conductivity and the second type conductivity. The first and the second doped electrode regions are formed in the first well. The second doped electrode is adjacent to the first doped electrode and has the second conductivity. The high threshold voltage channel region is formed in the first well and extending down from the surface of the substrate. | 07-10-2014 |
20140197878 | SWITCHABLE READOUT DEVICE - A readout device is adapted for dual-band sensing, and includes an amplifier, two direct injection (DI) readout circuits to be respectively connected to two sensors, and a switching module. Through operation of the switching module, one of the DI readout circuits can be electrically connected to the amplifier, and cooperate with the other DI readout circuit to achieve a dual-band sensing feature. | 07-17-2014 |
20140203862 | POWER CONTROL CIRCUIT AND ELECTRONIC DEVICE - A basic and simple power control circuit for selectively controlling power to an electronic device is provided. The electronic device includes a power module, a system power port, and a processing unit, the processing unit includes a first and a second power control pins. The power control circuit includes a power switch, a trigger signal producing sub-circuit, a trigger-receiving sub-circuit, and a switch controlling sub-circuit. The switch is connected between the power module and the system power port. The trigger signal producing sub-circuit produces a trigger signal. When receiving a trigger signal, the trigger-receiving sub-circuit follows a first control signal output by the second power control pin to output the first control signal. The switch controlling sub-circuit turns off the power switch when receiving the first control signal. | 07-24-2014 |
20140247085 | CONTROLLER FOR LOAD CIRCUIT - Two semiconductor switches are arranged in parallel in a load circuit for connecting a power source with a load. Further, the semiconductor switches are controlled so as to be alternately tuned on and off. As a result, since a current flows through only either of the semiconductor switches, an offset error detected by current sensors includes only an offset error of either of the semiconductor switches, the detection of current with high accuracy can be accomplished. Therefore, when performing the control of shutting off the circuit to cope with the occurrence of an overcurrent flowing through the load, the shutoff control with high accuracy can be accomplished. | 09-04-2014 |
20140253218 | Multi-Gate Field Effect Transistor - An improved field effect transistor (FET) is provided by segmenting the gates of a power FET wherein a controller can “decide” how much of the FET to use, thus increasing efficiency. | 09-11-2014 |
20140266401 | DATA-RETAINED POWER-GATING CIRCUIT AND DEVICES INCLUDING THE SAME - A power-gating circuit and devices including the same are provided. The power-gating circuit includes a flip-flop configured to receive a first power supply voltage and a gated clock signal to operate and a switch circuit connected between a first power supply voltage source configured to supply the first power supply voltage and a second power supply voltage source configured to supply a second power supply voltage. The switch circuit includes a first switch configured to be connected between the first power supply voltage source and the second power supply voltage source and to operate in response to a clock enable signal and a second switch configured to be connected between the first power supply voltage source and the second power supply voltage source and to operate in response to the first power supply voltage. | 09-18-2014 |
20140266402 | TRANSISTOR INCLUDING REENTRANT PROFILE - A transistor includes a substrate, an electrically conductive material layer, and an electrically insulating material layer. At least a portion of one or more of the substrate, the electrically conductive material layer, and the electrically insulating material layer define a reentrant profile. | 09-18-2014 |
20140292395 | GATE DRIVERS FOR CIRCUITS BASED ON SEMICONDUCTOR DEVICES - An electronic component includes a switching device comprising a source, a gate, and a drain, the switching device having a predetermined device switching rate. The electronic component further includes a gate driver electrically connected to the gate and coupled between the source and the gate of the switching device, the gate driver configured to switch a gate voltage of the switching device at a gate driver switching rate. The gate driver is configured such that in operation, an output current of the gate driver cannot exceed a first current level, wherein the first current level is sufficiently small to provide a switching rate of the switching device in operation to be less than the predetermined device switching rate. | 10-02-2014 |
20140320198 | PROTECTIVE DEVICE FOR A VOLTAGE-CONTROLLED SEMICONDUCTOR SWITCH - A protective device for a voltage-controlled semiconductor switch has a gate connection, a power emitter connection, an auxiliary emitter connection and a collector connection. The semiconductor switch can switch a current between the collector connection and the power emitter connection. A voltage-limiting device limits the voltage between the gate connection and the power emitter connection. A deactivation device is connected to the voltage-limiting device and deactivates the voltage-limiting device during a switch-on of the semiconductor switch. | 10-30-2014 |
20140340137 | RADIO FREQUENCY SWITCH WITH IMPROVED SWITCHING TIME - A radio frequency (RF) switch which comprises an RF domain section having a plurality of RF switching elements. A DC domain section is provided having circuitry configured for controlling the RF switching elements in response to one or more control signals. A resistive load is provided between the RF domain section and the DC domain section. A bypass circuit is configured for selectively bypassing at least a portion of the resistive load. | 11-20-2014 |
20140340138 | LOW VOLTAGE METAL GATE ANTIFUSE WITH DEPLETION MODE MOSFET - An antifuse according to an embodiment of the invention herein can include a depletion mode metal oxide semiconductor field effect transistor (“MOSFET”) having a conduction channel and a metal gate overlying the conduction channel. A cathode and an anode of the antifuse can be electrically coupled to the gate, such that the antifuse is programmable by driving a programming current between the cathode and the anode to cause material of the metal gate to migrate away. Under appropriate biasing conditions, when the antifuse is unprogrammed, the conduction channel is turned on unless a voltage above a first threshold voltage is applied to the gate to turn off the conduction channel. The gate can be configured such that when the antifuse has been programmed, the conduction channel remains turned on even if a voltage above the first threshold voltage is applied between the gate and a source region of the MOSFET. | 11-20-2014 |
20140347119 | CIRCUIT ARRANGEMENT - A circuit arrangement including a first transistor, a second transistor and a third transistor. The first transistor and the second transistor are configured so that the current flowing through the first transistor is proportional to the current flowing through the second transistor and the third transistor. The first transistor, the second transistor and the third transistor are configured to operate in an ohmic mode. The second transistor and the third transistor are coupled in series to each other. The first transistor, the second transistor and the third transistor match each other in at least one characteristic. | 11-27-2014 |
20140368256 | SEMICONDUCTOR SYSTEMS - Semiconductor systems are provided. The semiconductor system includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a buffer circuit that outputs a drive signal generated according to a comparison result of an input signal and an output signal through a first node, drives a second node in response to the drive signal, and divides a voltage level of the second node to generate the output signal through a third node. The second semiconductor device includes a stabilization circuit that is connected to the third node through a connector to stabilize the output signal. | 12-18-2014 |
20140368257 | Semiconductor switch - The present invention discloses a semiconductor switch comprising a switching unit. Said switching unit includes: a transistor having a drain, a gate and a source; a drain bias resistor coupled to the drain; a drain bias selecting circuit to couple the drain bias resistor with a first or a second drain bias according to the transistor's state; a gate bias resistor coupled to the gate; a gate bias selecting circuit to couple the gate bias resistor with a first or a second gate bias according to the transistor's state; a source bias resistor coupled to the source; and a source bias selecting circuit to couple the source bias resistor with a first or a second source bias according to the transistor's state, wherein the first and second drain biases are different, the first and second gate biases are different, and the first and second source biases are different. | 12-18-2014 |
20150028936 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A circuit which is constituted by a plurality of n-channel transistors includes, in at least one embodiment, a transistor (T | 01-29-2015 |
20150061753 | SIGNAL OUTPUT CIRCUIT AND SIGNAL OUTPUT METHOD - A signal output circuit includes: an output buffer including a first terminal configured to output a first output signal; a first output terminal; a first switch inserted on a signal path from the first terminal to the first output terminal; and a second switch configured to transmit a predetermined voltage to the first output terminal when being turned on. | 03-05-2015 |
20150116025 | Switching Circuit - In an embodiment, a switching circuit includes input drain, source and gate nodes, a high voltage depletion mode transistor including a current path coupled in series with a current path of a low voltage enhancement mode transistor, and a current sense circuit for sensing the current flowing through a current sense path. | 04-30-2015 |
20150295573 | FIELD-EFFECT TRANSISTOR - This FET includes: a source electrode pad, which is formed on a source electrode and which is electrically connected to the source electrode; and/or a drain electrode pad, which is formed on the drain electrode and which is electrically connected to the drain electrode. The source electrode pad has a cutout for reducing a parasitic capacitance between the source electrode pad and the drain electrode, and the drain electrode pad has a cutout for reducing a parasitic capacitance between the drain electrode pad and the source electrode. | 10-15-2015 |
20150318852 | RF SWITCH CIRCUIT - A RF switching arrangement ( | 11-05-2015 |
20150325639 | SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF - A semiconductor device and an operating method of the same are disclosed. The semiconductor device includes a substrate, a source region, a drain region, a gate structure, a first lightly-doped region, and a first isolation region. The source region and the drain region are formed in the substrate. The gate structure is formed on the substrate and between the source region and the drain region. The first lightly-doped region is formed below the source region. The first isolation region is formed in the substrate and surrounding the source region, the drain region, and the first lightly-doped region. The source region and the drain region have a first-polarity, and the first lightly-doped region and the first isolation region have a second-polarity. | 11-12-2015 |
20150325694 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND METHOD OF OPERATING THE SAME - Provided is a semiconductor device including a metal oxide semiconductor transistor, a Zener diode, and a resistor. The metal oxide semiconductor transistor includes a gate, a source and a drain. The resistor has one end electrically connected to the drain, wherein the resistor includes a high resistance which is sufficient for flowing most of current to pass the metal oxide semiconductor transistor. The Zener diode includes a cathode and an anode, in which the cathode is electrically connected the gate and another end of the resistor, and the anode is electrically connected to a gate body. | 11-12-2015 |
20150326220 | CIRCUIT ARRANGEMENT OF GATE SIDE FAN OUT AREA - The present invention is related to a circuit arrangement of a gate side fan out area. The circuit arrangement comprises: a first circuit module (T | 11-12-2015 |
20150341029 | SEMICONDUCTOR DEVICE AND POWER CIRCUIT INCLUDING A SENSE TRANSISTOR FOR CURRENT SENSING - A semiconductor device comprises a power transistor and a sense transistor. The power transistor conducts a power transistor current. The sense transistor conducts a sense transistor current substantially proportional to of the power transistor current. The power transistor and the sense transistor have drain source and a gate terminals, of which those of the sense transistor are arranged to be biased to those of the power transistor, respectively. The power transistor and the sense transistor each comprise: an inner region of type P−; an N-type buried layer; an N-type isolating barrier surrounding the inner region partially; an N-type source region in the inner region; an N-type drain region in the inner region. A barrier-to-drain connector connects the isolating barrier to the drain region, the one of the sense transistor has an electrical resistance which is higher than the resistance of the barrier-to-drain connector of the power transistor. | 11-26-2015 |
20150357407 | APPARATUSES AND METHODS INCLUDING A SUPERJUNCTION TRANSISTOR - Aspects of the present disclosure are directed toward apparatuses, methods, and systems that include at least two regions of a first semiconductor material and at least two regions of second semiconductor material that are alternatively interleaved. Additionally, the apparatuses, methods, and systems include a first electrode and a second electrode that can operate both as a source and drain. The apparatuses, methods, and systems also include a first gate electrode having multiple portions on the first semiconductor material and a second gate electrode having multiple portions on the second semiconductor material that bidirectionally control current flow between the first electrode and the second electrode. | 12-10-2015 |
20150381169 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A novel semiconductor device and a driving method thereof are provided. In the semiconductor device, a (volatile) node which holds data that is rewritten by arithmetic processing as appropriate and a node in which the data is stored are electrically connected through a source and a drain of a transistor whose channel is formed in an oxide semiconductor layer. The off-state current value of the transistor is extremely low. Therefore, electric charge scarcely leaks through the transistor from the latter node, and thus data can be held in the latter node even in a period during which supply of power source voltage is stopped. In the semiconductor device, a means of setting the potential of the latter node to a predetermined potential is provided. Specifically, a means of supplying a potential corresponding to “1” or “0” that is data stored in the latter node from the former node is provided. | 12-31-2015 |
20160013787 | Fully Capacitive Coupled Input Choppers | 01-14-2016 |
20160043078 | SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITERS - An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, and a gate electrode of the high-voltage depletion-mode transistor is electrically coupled to the source electrode of the low-voltage enhancement-mode transistor. The on-resistance of the enhancement-mode transistor is less than the on-resistance of the depletion-mode transistor, and the maximum current level of the enhancement-mode transistor is smaller than the maximum current level of the depletion-mode transistor. | 02-11-2016 |
20160064497 | DEVICES, COMPONENTS AND METHODS COMBINING TRENCH FIELD PLATES WITH IMMOBILE ELECTROSTATIC CHARGE - N-channel power semiconductor devices in which an insulated field plate is coupled to the drift region, and immobile electrostatic charge is also present at the interface between the drift region and the insulation around the field plate. The electrostatic charge permits OFF-state voltage drop to occur near the source region, in addition to the voltage drop which occurs near the drain region (due to the presence of the field plate). | 03-03-2016 |
20160065182 | DIGITAL CIRCUIT - A digital circuit comprises a plurality of functional circuits and a finite state machine. Each functional circuit comprises a digital macro, a resistance control device and at least one device with capacitance. The digital macro is coupled to a ground. The resistance control device is electrically connected between the digital macro and an always-on power mesh. The at least one device with capacitance is electrically connected between the resistance control device and the ground. The finite state machine is electrically connected to the resistance control device, and is configured to adjust the resistance of the resistance control device. | 03-03-2016 |
20160087091 | INSULATING GATE FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME - An insulated gate field-effect transistor (IGFET) device includes a semiconductor body ( | 03-24-2016 |
20160126941 | SWITCHING CIRCUIT - A circuit has an operational voltage supply node that carries an operational voltage having an operational voltage value, a reference voltage supply node that carries a reference voltage having a reference voltage value, and a sub-circuit and switching circuit between the operational voltage supply node and the reference voltage supply node. The switching circuit is in series with the sub-circuit and controls a current through the sub-circuit based on a difference between the operational voltage value and a nominal operational voltage value. | 05-05-2016 |
20160156348 | SOLID STATE POWER CONTROLLERS | 06-02-2016 |
20160164511 | CIRCUIT ARRANGEMENT FOR THE PROTECTION OF AT LEAST ONE COMPONENT OF A TWO WIRE ELECTRICAL CURRENT LOOP - The invention relates to a circuit arrangement for the protection of at least one component | 06-09-2016 |
20160164515 | BIASING SCHEME FOR HIGH VOLTAGE CIRCUITS USING LOW VOLTAGE DEVICES - Some embodiments include apparatus and methods having a first node to receive a supply voltage, a second node to receive a first bias voltage, a third node to receive ground potential, a first circuit branch coupled between the first and second nodes, and a second circuit branch coupled between the first and third nodes. The first bias voltage is provided to a gate of a first transistor among a plurality of transistors coupled in series. The first and second circuit branches are arranged to provide a second bias voltage to gate of a second transistor among the plurality of transistors. The value of the second bias voltage is based on a value of the first bias voltage. | 06-09-2016 |
20160173086 | Sampling circuit and sampling method | 06-16-2016 |
20160182040 | AUDIO SWITCH CIRCUIT WITH SLOW TURN-ON | 06-23-2016 |
20160380627 | INSULATED GATE DEVICE DISCHARGING - A large-power insulated gate switching device (e.g., MOSFET) is used for driving relatively large surges of pulsed power through a load. The switching device has a relatively large gate capacitance which is difficult to quickly discharge. A gate charging and discharging circuit is provided having a bipolar junction transistor (BJT) configured to apply a charging voltage to charge the gate of the switching device where the BJT is configured to also discontinue the application of the charging voltage. An inductive circuit having an inductor is also provided. The inductive circuit is coupled to the gate of the switching device and further coupled to receive the charging voltage such that application of the charging voltage to the inductive circuit is with a polarity that induces a first current to flow through the inductor in a direction corresponding to charge moving away from the gate and such that discontinuation of the application of the charging voltage to the inductive circuit induces a second current flowing through the inductor in the direction corresponding to charge moving away from the gate such that the second current discharges the gate of the switching device. Faster turn off of the switching device is thus made possible and is synchronized to the discontinuation of the charging voltage. | 12-29-2016 |
20180026631 | BIASING SCHEME FOR HIGH VOLTAGE CIRCUITS USING LOW VOLTAGE DEVICES | 01-25-2018 |