| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 327436000 | Plural devices in series | 38 |
| 20080204113 | Ultra fine pitch I/O design for microchips - A microchip includes at least one I/O area surrounding at least one core circuit area. The I/O area further includes a first I/O cell having at least one first post-driver device connected to a first I/O pad; a second I/O cell having at least one second post-driver device connected to a second I/O pad; and an electrostatic discharge (ESD) cluster shared by the first I/O cell and the second I/O cell for protecting the same against ESD current during an ESD event, thereby reducing a total width of the first I/O cell and the second I/O cell. | 08-28-2008 |
| 20080265981 | Circuit Arrangement and Method of Driving a Circuit Arrangement - The present invention relates to controlling switches in a series connection of electrical devices, in particular to a circuit arrangement, and method of operating same, in which a transistor switch ( | 10-30-2008 |
| 20090189679 | GATE DRIVING CIRCUIT AND DISPLAY APPARATUS HAVING THE SAME - A gate driving circuit includes cascaded stages, each including a pull-up part, a carry part, a pull-up driving part, a holding part and an inverter. The pull-up part pulls up a gate voltage to an input clock. The carry part pulls up a carry voltage to the input clock. The pull-up driving part is connected to a control terminal (Q-node) common to the carry part and the pull-up part, and receives a previous carry voltage from a previous stage to turn on the pull-up part and the carry part. The holding part holds the gate voltage at an off-voltage, and the inverter controls at least one of turning on the holding part and turning off the holding part based on an inverter clock. A high level of the inverter clock in a given horizontal period (1H) temporally precedes a high level of the input clock by a predetermined time interval. | 07-30-2009 |
| 20090243703 | HIGH-FREQUENCY SWITCHING CIRCUIT MODULE - A high-frequency switching circuit module includes a high-frequency switch that includes an FET switching element and that selectively connects between a common input/output terminal and one of input/output terminals, and a matching circuit that is provided to the common input/output terminal Pc and is not provided to the input/output terminals. Although a non-selected input/output terminal of the high-frequency switch acts as a capacitor and the impedance between the common input/output terminal and a selected input/output terminal is displaced from a normal impedance, the displacement is corrected by the matching circuit connected to the common input/output terminal such that the impedance viewed from the common input/output terminal Pc to the high-frequency switch is made equal to the normal impedance. Accordingly, a high-frequency switching circuit module having a small overall size and achieving impedance matching for each terminal is provided. | 10-01-2009 |
| 20090251197 | Simplified Circuit to Use a Normally Conducting Circuit Element That Requires a Normally Blocking Circuit Element - An embodiment of the invention relates to a switching system that includes a depletion-mode semiconductor device, such as a silicon carbide device, coupled in series with an enhancement-mode semiconductor device, such as a silicon field effect transistor, so that a controller can be configured to disable conductivity of the series arrangement of the two switches during a transient operating condition. During normal high-frequency switching operation, the controller persistently enables the enhancement-mode device to conduct while intermittently enabling the depletion-mode device to conduct. The controller disables the enhancement-mode device to conduct during a transient operating condition such as start up or during a fault, thereby providing circuit protection during such transients. The switching system preserves low loss switching characteristics of the depletion-mode device in a high-frequency switching circuit. | 10-08-2009 |
| 20100123509 | PAD CIRCUIT FOR THE PROGRAMMING AND I/O OPERATIONS - A pad circuit includes a pad, a gate driving circuit, a voltage selection circuit, and an ESD detection/avoiding circuit. The gate driving circuit is used to discharge the ESD induced current. The ESD detection/avoiding circuit is used to isolate the ESD induced voltage. The voltage selection circuit selects a higher voltage from a power/ground terminal and the pad and outputs it to the gate driving circuit, so that the pad circuit can be used for the programming and 1/0 operations. | 05-20-2010 |
| 20100134174 | Circuit Arrangement Comprising Feedback Protection For Switching In Power Applications - Disclosed is a circuit arrangement comprising feedback protection for switching the current flow in power applications. Said circuit arrangement comprises two serially connected MOSFETs (1, 2) on the conductor branch that is to be switched. Said MOSFETs are connected such that the inverse diodes thereof are arranged opposite each other regarding the PN junction. | 06-03-2010 |
| 20100171543 | PACKAGED POWER SWITCHING DEVICE - A packaged switching device for power applications includes at least one pair of power MOSFET transistor dies connected between upper and lower power source rail leads, a high side one of the pair of MOSFET transistor dies being connected to the upper power source rail lead and a low side one of the pair of MOSFET transistor dies being connected to the lower power source rail lead. At least one of the MOSFET transistor dies is configured for vertical current flow therethrough and has a source electrode at a backside thereof. | 07-08-2010 |
| 20100207679 | Conduction switching circuit, conduction switching circuit block, and operating method of conduction switching circuit - An object is to provide a conduction switching circuit, an operation method of a conduction switching circuit, and a conduction switching circuit block, which can prevent a leakage of a high frequency signal without insertion loss of a reactance. A conduction switching circuit includes a first MOSFET, a second MOSFET connected to the first MOSFET via a first node, and a first control terminal connected to the first node. The first MOSFET and the second MOSFET are provided so as to be electrically connected in series at ON state. The first control terminal is configured to apply a voltage to the first node so that capacitance of the first MOSFET and the second MOSFET is decreased when the first MOSFET and the second MOSFET are OFF state. | 08-19-2010 |
| 20100253415 | HIGH POWERED HIGH SPEED SWITCH - An amplified signal switching system comprises a plurality of transducers, and a switch operable for diverting amplified transient signals to selected transducers and preventing the amplified transient signals from being sent to non-selected transducers, wherein the amplified transient signals are AC or acoustic signals, wherein the plurality of transducers comprise a plurality of speakers, and wherein the plurality of transducers are isolated from one another. The switching system further comprises an amplifier operable for sending the amplified transient signals to the switch. The switch selectively turns the amplified transient signals on and off to the selected transducers in order to prevent the non-selected transducers from receiving the amplified transient signals. Moreover, the switch minimizes signal distortion in the selected transducers, and alternatively, the switch eliminates signal output to the non-selected transducers. | 10-07-2010 |
| 20100295602 | SEMICONDUCTOR RELAY - A semiconductor relay of the invention includes first and second signal terminals, a substrate, a first switch circuit and a control circuit. The substrate includes signal patterns for forming a signal line between the first and second signal terminals. The first switch circuit has a semiconductor switch used to make or break the connection between the first and second signal terminals. The control circuit has a control IC for controlling the first switch circuit. The control IC is mounted on a land of the substrate. The land has a size corresponding to the control IC. A part or all of the land is included in a part of the signal patterns. | 11-25-2010 |
| 20100327948 | Switching Circuit - A method for controlling a switch based on transistors is disclosed. A switching circuit for switching a signal from an input port to an output port thereof is provided. A shunting circuit for switchably shunting the signal from the input port to ground is also provided. A control signal is generated for biasing a control port of the shunting circuit and an approximately complimentary control signal is generated for biasing of the switching circuit to either shunt a signal received at the input port or to switch the signal to the output port. A further bias signal for biasing a port within the switching circuit along the signal path between the input port and the output port is also provided. | 12-30-2010 |
| 20110025404 | SWITCHES WITH VARIABLE CONTROL VOLTAGES - Switches with variable control voltages and having improved reliability and performance are described. In an exemplary design, an apparatus includes a switch, a peak voltage detector, and a control voltage generator. The switch may be implemented with stacked transistors. The peak voltage detector detects a peak voltage of an input signal provided to the switch. In an exemplary design, the control voltage generator generates a variable control voltage to turn off the switch based on the detected peak voltage. In another exemplary design, the control voltage generator generates a variable control voltage to turn on the switch based on the detected peak voltage. In yet another exemplary design, the control voltage generator generates a control voltage to turn on the switch and attenuate the input signal when the peak voltage exceeds a high threshold. | 02-03-2011 |
| 20110156796 | HIGH VOLTAGE SWITCH CIRCUIT OF SEMICONDUCTOR DEVICE - A high voltage switch circuit of a semiconductor device includes a buffer circuit configured to output a control signal in response to an input signal and a boost circuit configured to output a block selection signal to an output terminal by connecting a current path between a voltage supply node and the output terminal in response to the control signal, and to block the current path in case where the control signal falls from a high voltage level to a low voltage level. | 06-30-2011 |
| 20110163793 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE USING THE SAME - A semiconductor device with less power consumption and an electronic appliance using the same. The semiconductor device of the invention is supplied with a first potential from a high potential power source and a second potential from a low potential power source. Upon input of a first signal to an input node, an output node outputs a second signal. With the semiconductor device of the invention, a potential difference of the second signal can be controlled to be smaller than a potential difference between the first potential and the second potential, thereby power consumption required for charging/discharging wires can be reduced. | 07-07-2011 |
| 20120007658 | BALANCED SWITCH - Embodiments of circuits, devices, and methods related to a radio frequency switch are disclosed. In various embodiments, a circuit may comprise a series path including a series transistor to be switched on during a first mode of operation; a shunt path including a shunt transistor to be switched off during the first mode of operation; and a return path including a return transistor to be switched on during the first mode of operation. Other embodiments may also be described and claimed. | 01-12-2012 |
| 20120025896 | POWER SUPPLY SELECTOR AND POWER SUPPLY SELECTION METHOD - In the field of electronic technologies, a power supply selector and a power supply selection method are provided. The power supply selector includes: a first selection module, configured to select a power supply from multiple candidate power supplies; a control module, coupled to the first selection module, and configured to use the power supply selected by the first selection module as a power supply, and compare voltages of the multiple candidate power supplies to generate a control signal of each candidate power supply; and a second selection module, coupled to the control module, and configured to select a power supply for output in the multiple candidate power supplies under the control of the control signal of each candidate power supply. The technical solution is used to select a power supply from multiple candidate power supplies. | 02-02-2012 |
| 20120056661 | HIGH VOLTAGE MULTIPLEXER ELEMENT AND MULTIPLEXER SYSTEM USING SAME - This invention features a high voltage multiplexer element including a voltage to current converting input resistance connected to the input of the element, first and second MOSFET switches connected in series between the input resistance and the output of the multiplexer element, and a third MOS switch connected between the junction of the first and second MOSFET switches and a voltage equal to or less than the supply; the first MOSFET switch being drain engineered and having drain-source breakdown voltage higher than the supply. | 03-08-2012 |
| 20120139616 | DOUBLE POLE DOUBLE THROW SWITCH DEVICE - A double pole double throw switch device is provided. The device includes a first path circuit, a second path circuit, a third path circuit and a fourth path circuit. The first terminals of the first and second path circuits are coupled to a first port, and the second terminals of the first and second path circuits are respectively coupled to a third port and a fourth port. The first terminals of the third and fourth path circuits are coupled to a fourth port, and the second terminals of the third and fourth path circuits are respectively coupled to the second port and the third port. Each path circuit includes a switch module and a functional switch circuit. When a switch module is turned on, its corresponding functional switch circuit is turned off, and when the switch module is turned off, its corresponding functional switch circuit is turned on. | 06-07-2012 |
| 20120188003 | LEAKAGE COMPENSATED ELECTRONIC SWITCH - An electronic circuit for switching purposes comprises a set of at least four electronic switches. A first subset and a second subset comprise at least two electronic switches of said set, respectively. Said at least two electronic switches of said first subset are arranged in a serial connection. Said at least two electronic switches of said second subset are arranged in a serial connection. The electronic circuit comprises a first buffer connected to a first electronic switch of said first subset and a second buffer connected to a second electronic switch of said second subset. Said first buffer minimises a potential drop across said first electronic switch when in open state, and said second buffer minimises a potential drop across said second electronic switch when in open state. The electronic circuit further comprises a switched connection towards ground arranged in between the two subsets. | 07-26-2012 |
| 20120249217 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A high-speed semiconductor integrated circuit device is achieved by adjusting an offset voltage. For example, dummy NMOS transistors MND | 10-04-2012 |
| 20130093499 | POWER SWITCH AND OPERATION METHOD THEREOF - A power switch includes a control circuit, a cross-coupled amplifier, a first switching circuit coupled between a first output terminal and the first controlled ground terminal, and a second switching circuit coupled between a second output terminal and the second controlled ground terminal. The control circuit is configured to connect the second controlled ground terminal to a ground during a first period that a voltage level at the first output terminal is switched from the ground to a first voltage level and to set the second controlled ground terminal at an elevated ground level during a second period that the voltage level at the first output terminal remains at the first voltage level. | 04-18-2013 |
| 20130300494 | OUTPUT CIRCUIT - An output circuit includes a current source and a first MOS transistor coupled in series between a power supply terminal and an output terminal. The first MOS transistor includes a backgate coupled to a drain of the second MOS transistor. The second MOS transistor includes a source coupled to a source of a third MOS transistor. The second MOS transistor includes a source coupled to backgates of the second and third MOS transistors. The backgates of the second and third MOS transistors are in a floating condition. | 11-14-2013 |
| 20140055192 | SATURATION CURRENT LIMITING CIRCUIT TOPOLOGY FOR POWER TRANSISTORS - A circuit topology for limiting saturation current in power transistors is disclosed. The circuit topology includes a normally-on transistor and a normally-off transistor coupled in series. A limiter circuit is coupled between a gate of the normally-on transistor and a source of the normally-off transistor for limiting the steady-state maximum gate-to-source voltage V | 02-27-2014 |
| 20140091854 | DC INSULATION SEMICONDUCTOR RELAY DEVICE - A semiconductor relay device ( | 04-03-2014 |
| 20140240030 | Semiconductor Switch Circuit - A semiconductor switch circuit includes first semiconductor switch units and second semiconductor switch units. The first semiconductor switch units each have a first threshold and two first ends. One first end is connected to a common terminal. The second semiconductor switch units each have a second threshold and two second ends. One second end is connected to the other first end of the first semiconductor switch units. The second threshold is lower than the first threshold. | 08-28-2014 |
| 20150035586 | SOLID-STATE SWITCHING DEVICE HAVING A HIGH-VOLTAGE SWITCHING TRANSISTOR AND A LOW-VOLTAGE DRIVER TRANSISTOR - According to an embodiment, a solid-state switching device includes a high-voltage switching transistor including a source, a drain and a gate, and being adapted for switching a high voltage on the basis of a switching signal, and a switching driver circuit operationally connected to the high-voltage switching transistor, the switching driver circuit including a low-voltage driver transistor including a source, a drain and a gate, connected in series to the high-voltage switching transistor and being adapted for transferring the switching signal to the high-voltage switching transistor, wherein the high-voltage switching transistor is arranged source-down on top of the drain of the low-voltage driver transistor. | 02-05-2015 |
| 20150372675 | METHOD OF SWITCHING A SEMICONDUCTOR DEVICE - There is provided a method of switching on a semiconductor device. The semiconductor device includes gate, collector and emitter terminals. The method includes the steps of: (i) applying, upon receipt of a switch-on signal, a voltage to the gate terminal of the semiconductor device to decrease a collector-emitter voltage of the semiconductor device to a first predetermined voltage plateau level, and maintaining that voltage to the gate terminal of the semiconductor device for a predetermined time period; (ii) after the predetermined time period, controlling the voltage applied to the gate terminal of the semiconductor device to change the collector-emitter voltage at varying ramp-rates until the collector-emitter voltage reaches a predetermined voltage level; and (iii) controlling the voltage applied to the gate terminal of the semiconductor device to maintain the collector-emitter voltage at the predetermined voltage level. | 12-24-2015 |
| 20160036434 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device includes a power domain area on a semiconductor substrate, that includes a circuit block for executing a predetermined function, a first power source line that receives an external power source voltage, a second power source line that is connected to the circuit block, a first power switch circuit in a peripheral area of the power domain area, that connects the first power source line and the second power source line in response to a first enable signal, and a second power switch circuit in the power domain area, that connects the first power source line and the second power source line in response to a second enable signal. | 02-04-2016 |
| 20160049931 | RADIO FREQUENCY SWITCH CIRCUIT - A radio frequency switch circuit may include: a first switch circuit unit connected between a first signal port for transmitting and receiving a signal and a common connection node and operated by a first gate signal; a second switch circuit unit connected between a second signal port for transmitting and receiving a signal and the common connection node and operated by a second gate signal; a first shunt circuit unit including first and second shunt units connected to each other in series between a first connection node connected to the first signal port and a ground, the first shunt unit being operated by the first gate signal and the second shunt unit being operated by the second gate signal; and a second shunt circuit unit connected between a second connection node connected to the second signal port and the ground and operated by the first gate signal. | 02-18-2016 |
| 20160134281 | SWITCH ISOLATION NETWORK - Radio-frequency (RF) switches and devices are disclosed providing improved switch isolation. Disclosed RF switches may include a pole node, a first throw arm connected between the pole node and a first throw node, and a second throw arm connected between the pole node and a second throw node, the second throw arm including first and second field-effect transistors (FETs). RF switches may further include a passive device connected on a first end to a source connector of the first FET and on a second end to a drain connector of the second FET. | 05-12-2016 |
| 20160142050 | MULTIPLE-UNIT SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING THE SAME - Provided are a multiple-unit semiconductor device that enables space savings and a method for controlling such a semiconductor device. A multiple-unit semiconductor device is brought into conduction by a Si-FET being brought into conduction first and a GaN device being brought into conduction after the Si-FET has been brought into conduction. | 05-19-2016 |
| 20160156349 | SEMICONDUCTOR INTEGRATED CIRCUIT HAVING A SWITCH, AN ELECTRICALLY- CONDUCTIVE ELECTRODE LINE AND AN ELECTRICALLY-CONDUCTIVE VIRTUAL LINE | 06-02-2016 |
| 20160182032 | SEMICONDUCTOR DEVICE | 06-23-2016 |
| 20160191051 | Switch Circuit and Method of Switching Radio Frequency Signals - An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. | 06-30-2016 |
| 20180026622 | APPARATUSES AND METHODS FOR REDUCING OFF STATE LEAKAGE CURRENTS | 01-25-2018 |
| 20180026632 | ULTRA-LOW POWER CROSS-POINT ELECTRONIC SWITCH APPARATUS AND METHOD | 01-25-2018 |
| 20190149143 | APPARATUSES FOR REDUCING OFF STATE LEAKAGE CURRENTS | 05-16-2019 |
