| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257449000 | Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO 2 , indium tin oxide)) | 11 |
| 20090134486 | PHOTODIODE, METHOD FOR MANUFACTURING SUCH PHOTODIODE, OPTICAL COMMUNICATION DEVICE AND OPTICAL INTERCONNECTION MODULE - Both high light receiving sensitivity and high speed of a photodiode are achieved at the same time. The photodiode is provided with a semiconductor layer ( | 05-28-2009 |
| 20100244174 | HIGHLY-DEPLETED LASER DOPED SEMICONDUCTOR VOLUME - A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations. | 09-30-2010 |
| 20120012967 | Black silicon based metal-semiconductor-metal photodetector - A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light. | 01-19-2012 |
| 20120306042 | MgS Solar-Blind UV Radiation Detector - A UV detector is designed to provide a photoresponse with a cutoff wavelength below a predetermined wavelength. The detector uses a sensor element having an active layer comprising a MgS component grown directly on a substrate. A thin layer metal layer is deposited over the active layer and forms a transparent Schottky metal layer. | 12-06-2012 |
| 257450000 | With doping profile to adjust barrier height | 1 |
| 20100301445 | TRENCH SIDEWALL CONTACT SCHOTTKY PHOTODIODE AND RELATED METHOD OF FABRICATION - A Schottky photodiode may include a monocrystalline semiconductor substrate having a front surface, a rear surface, and a first dopant concentration and configured to define a cathode of the Schottky photodiode, a doped epitaxial layer over the front surface of the monocrystalline semiconductor substrate having a second dopant concentration less than the first dopant concentration, and parallel spaced apart trenches in the doped epitaxial layer and having of a depth less than a depth of the doped epitaxial layer. The Schottky photodiode may include a metal filler in the parallel spaced apart trenches to form a Schottky rectifying contact with the doped epitaxial layer, an anode current distributor metal layer on a surface of the doped epitaxial layer and in electrical contact with the metal filler of the parallel spaced apart trenches, a dielectric passivation layer on the anode current distributor metal layer, and a conductive metal layer over the rear surface of the monocrystalline semiconductor substrate and configured to provide an ohmic contact with the cathode. | 12-02-2010 |
| 257451000 | Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor) | 1 |
| 20080308891 | ULTRA LOW DARK CURRENT PIN PHOTODETECTOR - A photodetector and a method for fabricating a photodetector. The photodetector may include a substrate, a buffer layer formed on the substrate, and an absorption layer formed on the buffer layer for receiving incident photons and generating charged carriers. An N-doped interface layer may be formed on the absorption layer, an N-doped cap layer may be formed on the N-doped interface layer, and a dielectric passivation layer may be formed above the cap layer. A P | 12-18-2008 |
| 257453000 | With specified Schottky metallic layer | 5 |
| 20080308892 | SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A METAL-SEMICONDUCTOR CONTACT - A semiconductor component including a first layer ( | 12-18-2008 |
| 20100264506 | Light-Tight Silicon Radiation Detector - A light-tight silicon detector. The detector utilizes a silicon substrate having a sensitive volume for the detection of ionizing radiation and a rectifying contact or electrode through which the ionizing radiation may enter. A diffused or boron-implanted p+ layer may act at the rectifying electrode. A first layer of titanium nitride is deposited on the entrance window to prevent light from being admitted to the sensitive volume and to increase the abrasion and corrosion resistance of the detector. Alternatively a titanium nitride layer may be deposited directly on the silicon substrate, said layer acting as a surface barrier or Schottky barrier rectifying contact. A layer of titanium nitride may be deposited on the backside contact wherein this titanium nitride layer serves as an ohmic contact. The second layer may be further utilized as a conductive contact for surface mount connections. | 10-21-2010 |
| 20120104535 | PHOTODETECTOR - A photodetector includes a substrate, a first electrode layer, a first light absorbing layer, a second electrode layer, a second light absorbing layer, and a third electrode layer that are laminated on the substrate, a first electrode wire that intercouples the first electrode layer and the second electrode layer, a second electrode wire that intercouples the second electrode layer and the third electrode layer, a first diode formed at a place where the second electrode layer and the first electrode wire are mutually brought into contact, and a second diode formed at a place where the second electrode layer and the second electrode wire are mutually brought into contact. | 05-03-2012 |
| 257454000 | Schottky metallic layer is a silicide | 2 |
| 20080217721 | HIGH EFFICIENCY RECTIFIER - A high-efficiency power semiconductor rectifier device ( | 09-11-2008 |
| 257456000 | Silicide of refractory metal | 1 |
| 20110215434 | THIN-FILM PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THIN-FILM PHOTOELECTRIC CONVERSION DEVICE - Provided are a thin-film photoelectric conversion device of which thickness can be reduced to several tens nanometers (nm) or below, and a method of manufacturing the thin-film photoelectric conversion device. | 09-08-2011 |
