| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257447000 | With backside illumination (e.g., having a thinned central area or a non-absorbing substrate) | 51 |
| 20090243022 | METHOD OF FORMING MASK FOR LITHOGRAPHY, METHOD OF FORMING MASK DATA FOR LITHOGRAPHY, METHOD OF MANUFACTURING BACK-ILLUMINATED SOLID-STATE IMAGING DEVICE, BACK-ILLUMINATED SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE - A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals are reversed, when forming the mask for lithography used for manufacturing a back-illuminated solid-state imaging device which takes incident light from the side of a surface opposite to the side of a surface on which wiring of a device region in which photoelectric conversion elements are formed is formed. | 10-01-2009 |
| 20090302411 | Apparatus And Method For Image Sensor With Carbon Nanotube Based Transparent Conductive Coating - A backside illuminated image sensor has a carbon nanotube transparent conductive coating formed on the backside of the image sensor. In one implementation the carbon nanotube transparent conductive coating acts as a wavelength selective filter to filter out infrared light. In one implementation the carbon nanotube transparent conductive coating has an optical transparency between 50% and 80% for blue and green color bands. | 12-10-2009 |
| 20100006970 | BACKSIDE ILLUMINATED IMAGE SENSOR WITH REDUCED DARK CURRENT - A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device. | 01-14-2010 |
| 20100025799 | WAFER FOR BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE, PRODUCTION METHOD THEREOF AND BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE - A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing n-type semiconductor material through a chemical oxide film having a thickness of not more than 1 nm. | 02-04-2010 |
| 20100127342 | BACK-ILLUMINATED TYPE SOLID-STATE IMAGING DEVICE - A back-illuminated type solid-state imaging device is provided in which an electric field to collect a signal charge (an electron, a hole and the like, for example) is reliably generated to reduce a crosstalk. | 05-27-2010 |
| 20100140732 | METHOD AND APPARATUS FOR BACKSIDE ILLUMINATED IMAGE SENSORS USING CAPACITIVELY COUPLED READOUT INTEGRATED CIRCUITS - The images sensor includes a readout circuit capacitatively coupled to a memory circuit. The readout circuit includes: (i) a photon detector to receive a plurality of photons and to provide a charge signal corresponding to the received photons, (ii) a resettable integrator that is reset multiple times over a single exposure time and provides an analog representation of the incident photons during the last integration cycle, and (iii) a comparator that monitors the integrator output and generates a reset pulse when the integrator reaches a built-in threshold value. The memory circuit includes: (i) a receiver circuit that detects the output of the digital driver in the front-end readout circuit via capacitive coupling and generates a digital voltage pulse for each received signal, and (ii) a digital counting memory to count the received pulses to provide a coarse digital representation of how many times the integrator is reset. | 06-10-2010 |
| 20100140733 | Back-side illuminated image sensor - In an example embodiment, the backside-illuminated image sensor includes a substrate including a plurality of photoelectric conversion devices being separated by a semiconductor. The backside-illuminated sensor further includes a transparent electrode layer or a metal layer formed on a surface of a substrate. As a positive bias voltage or a negative bias voltage is applied to the transparent electrode layer or the metal layer, generation of dark current in the surface of the silicon substrate may be reduced or suppressed. | 06-10-2010 |
| 20100148295 | BACK-ILLUMINATED CMOS IMAGE SENSORS - A semiconductor wafer includes one or more back-illuminated image sensors each formed in a portion of the semiconductor wafer. One or more thinning etch stops are formed in other portions of the semiconductor wafer. | 06-17-2010 |
| 20100213565 | High Speed Backside Illuminated, Front Side Contact Photodiode Array - The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of photodiodes with front metallic cathode pads, front metallic anode pad, back metallic cathode pads, n+ doped regions and a p+ doped region. The front metallic cathode pads physically contact the n+ doped regions and the front metallic anode pad physically contacts the p+ doped region. The back metallic cathode pads physically contact the n+ doped region. | 08-26-2010 |
| 20100327388 | Back-illuminated image sensors having both frontside and a backside photodetectors - A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region. | 12-30-2010 |
| 20100327389 | Back-illuminated image sensors having both frontside and backside photodetectors - A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of the first conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the first conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of a second conductivity type is disposed in the sensor layer adjacent to the frontside of the sensor layer. A distinct plurality of backside photodetectors of the second conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to the backside region. One or more or more channel regions of the second conductivity type are disposed in respective portions of the sensor layer between the frontside photodetector and the backside photodetector in each photodetector pair. | 12-30-2010 |
| 20100327390 | BACK-ILLUMINATED IMAGE SENSOR WITH ELECTRICALLY BIASED CONDUCTIVE MATERIAL AND BACKSIDE WELL - Back-illuminated image sensors include one or more contact implant regions disposed adjacent to a backside of a sensor layer. An electrically conductive material, including, but not limited to, a conductive lightshield, is disposed over the backside of the sensor layer. A backside well is formed in the sensor layer adjacent to the backside, and an insulating layer is disposed over the surface of the backside. Contacts formed in the insulating layer electrically connect the electrically conducting material to respective contact implant regions. At least a portion of the contact implant regions are arranged in a shape that corresponds to one or more pixel edges. | 12-30-2010 |
| 20100327391 | BACK-ILLUMINATED IMAGE SENSOR WITH ELECTRICALLY BIASED FRONTSIDE AND BACKSIDE - A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more regions of a second conductivity type are formed in at least a portion of the sensor layer adjacent to the frontside. The one or more regions are connected to a voltage terminal for biasing these regions to a predetermined voltage. A backside well of the second conductivity type is formed in the sensor layer adjacent to the backside. The backside well is electrically connected to another voltage terminal for biasing the backside well at a second predetermined voltage that is different from the first predetermined voltage. | 12-30-2010 |
| 20100327392 | BACK-ILLUMINATED IMAGE SENSORS HAVING BOTH FRONTSIDE AND BACKSIDE PHOTODETECTORS - A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type. | 12-30-2010 |
| 20110049664 | EPITAXIAL SUBSTRATE FOR BACK-ILLUMINATED IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - Provided is an epitaxial substrate for a back-illuminated image sensor and a manufacturing method thereof that is capable of suppressing metal contaminations and reducing occurrence of a white spot defect of the image sensor, by maintaining a sufficient gettering performance in a device process. The present invention includes forming a gettering sink immediately below a surface of a high-oxygen silicon substrate, forming a first epitaxial layer on the surface of the high-oxygen silicon substrate, and forming a second epitaxial layer on the first epitaxial layer, in which the step of forming the gettering sink includes forming an oxygen precipitate region by applying a long-time heat treatment at a temperature of 650-1150° C. to the high-oxygen silicon substrate. | 03-03-2011 |
| 20110084352 | BACK-ILLUMINATED TYPE SOLID-STATE IMAGING DEVICE - A back-illuminated type solid-state imaging device is provided in which an electric field to collect a signal charge (an electron, a hole and the like, for example) is reliably generated to reduce a crosstalk. | 04-14-2011 |
| 20110089517 | CMOS IMAGE SENSOR WITH HEAT MANAGEMENT STRUCTURES - An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed within a pixel array region and peripheral circuitry disposed within a peripheral circuits region. The photosensitive elements are sensitive to light incident on a backside of the device wafer substrate. The heat control structure is disposed within the device wafer substrate and thermally isolates the pixel array region from the peripheral circuits region to reduce heat transfer between the peripheral circuits region and the pixel array region. The heat sink conducts heat away from the device layer. | 04-21-2011 |
| 20110108940 | METHOD OF FABRICATING BACKSIDE-ILLUMINATED IMAGE SENSOR - Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor. | 05-12-2011 |
| 20110241152 | SENSOR ELEMENT ISOLATION IN A BACKSIDE ILLUMINATED IMAGE SENSOR - The present disclosure provides methods and apparatus for sensor element isolation in a backside illuminated image sensor. In one embodiment, a method of fabricating a semiconductor device includes providing a sensor layer having a frontside surface and a backside surface, forming a plurality of frontside trenches in the frontside surface of the sensor layer, and implanting oxygen into the sensor layer through the plurality of frontside trenches. The method further includes annealing the implanted oxygen to form a plurality of first silicon oxide blocks in the sensor layer, wherein each first silicon oxide block is disposed substantially adjacent a respective frontside trench to form an isolation feature. A semiconductor device fabricated by such a method is also disclosed. | 10-06-2011 |
| 20110248373 | METHOD OF FORMING MASK FOR LITHOGRAPHY, METHOD OF FORMING MASK DATA FOR LITHOGRAPHY, METHOD OF MANUFACTURING BACK-ILLUMINATED SOLID-STATE IMAGING DEVICE, BACK-ILLUMINATED SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE - A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals are reversed, when forming the mask for lithography used for manufacturing a back-illuminated solid-state imaging device which takes incident light from the side of a surface opposite to the side of a surface on which wiring of a device region in which photoelectric conversion elements are formed is formed. | 10-13-2011 |
| 20110291219 | BACKSIDE ILLUMINATION IMAGE SENSOR, METHOD OF FABRICATING THE SAME, AND ELECTRONIC SYSTEM INCLUDING THE BACKSIDE ILLUMINATION IMAGE SENSOR - A backside illumination image sensor, a method of fabricating the same, and an electronic system including the backside illumination image sensor, the backside illumination image sensor including a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; and metal interconnections below the semiconductor substrate, wherein each of the photodiodes includes a N-type region, a lower P-type region below the N-type region, and an upper P-type region on the N-type region. | 12-01-2011 |
| 20110304003 | SEMICONDUCTOR DEVICE, CAMERA MODULE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - According to the embodiments, a semiconductor substrate, an active layer that is formed on one surface of the semiconductor substrate, a wiring layer that is formed on the active layer and includes a wire to be a convex portion on a surface that is not in contact with the active layer, a insulation layer that is formed on the wiring layer to have a concave portion, an embedded layer that is provided on the concave portion of the insulation layer, a bonding layer that is provided on the insulation layer and the embedded layer, and a substrate that is bonded to the bonding layer to face one surface of the semiconductor substrate are included. | 12-15-2011 |
| 20120007204 | METHOD TO OPTIMIZE SUBSTRATE THICKNESS FOR IMAGE SENSOR DEVICE - Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths. | 01-12-2012 |
| 20120038017 | Method for Making Multi-Step Photodiode Junction Structure for Backside Illuminated Sensor - A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantation is performed over the substrate to implant a second doped region over the first doped region. The combined thickness of the first and second doped region is greater than 50 percent of thickness of the substrate and the distance between back surface of the substrate and the first and second doped regions is less than 50 percent of thickness of the substrate. In this way, an enlarged light sensing region is formed through which electrons generated from back surface of the surface may easily reach the pixel. | 02-16-2012 |
| 20120104534 | IMAGE SENSOR INCLUDING GUARD RING AND NOISE BLOCKING AREA TO BLOCK NOISE AND METHOD OF MANUFACTURING THE SAME - An image sensor including a deep guard ring and a noise blocking area and a method of manufacturing the same. The image sensor includes the deep guard ring and a deep P well surrounding the noise blocking area, thereby preventing crosstalk between adjacent pixels. In addition, an ion implantation layer is divided by the noise blocking area, so that substrate crosstalk is effectively eliminated. | 05-03-2012 |
| 20120175722 | SEAL RING SUPPORT FOR BACKSIDE ILLUMINATED IMAGE SENSOR - A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring. | 07-12-2012 |
| 20120235271 | SOLID-STATE IMAGE SENSING DEVICE - According to one embodiment, there is provided a solid-state image sensing device including a photodiode in which a semiconductor region of a first conductivity type formed on a substrate and a semiconductor region of a second conductivity type which is different from the first conductivity type is made as a PN junction. The semiconductor region of the first conductivity type has a first semiconductor region and a plurality of second semiconductor regions. Either of the first semiconductor region and each of the second semiconductor regions is formed by a material containing Si as a main component. The other of the first semiconductor region and each of the second semiconductor regions is formed by a material containing Si | 09-20-2012 |
| 20120261783 | BACK-SIDE ILLUMINATED IMAGE SENSOR PROVIDED WITH A TRANSPARENT ELECTRODE - A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode. | 10-18-2012 |
| 20120261784 | METHOD FOR FORMING A BACK-SIDE ILLUMINATED IMAGE SENSOR - A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) forming, from the front surface of the substrate, areas of same conductivity type as the substrate but of higher doping level, extending deep under the front surface, these areas being bordered with insulating regions orthogonal to the front surface; b) thinning the substrate from the rear surface to the vicinity of these areas and all the way to the insulating regions; c) partially hollowing out the insulating regions on the rear to surface side; and d) performing a laser surface anneal of the rear surface of the substrate. | 10-18-2012 |
| 20130001733 | SOLID-STATE IMAGING APPARATUS AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING APPARATUS - According to one embodiment, a method for manufacturing a solid-state imaging apparatus is provided. The method for manufacturing a solid-state imaging apparatus includes forming an element separating area separating photoelectric converting elements therebetween by epitaxially growing a semiconductor layer of a first conductivity type; and forming a charge accumulating area in the photoelectric converting element by epitaxially growing a semiconductor layer of a second conductivity type. | 01-03-2013 |
| 20130032920 | Pad Structures Formed in Double Openings in Dielectric Layers - An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the front side of the semiconductor substrate. An opening penetrates through the semiconductor substrate from the backside of the semiconductor substrate, wherein the opening includes a first portion extending to expose a portion of the metal pad and a second portion extending to expose a portion of the second dielectric layer. A metal layer is formed in the first portion and the second portion of the opening. | 02-07-2013 |
| 20130032921 | BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM - An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region. | 02-07-2013 |
| 20130285188 | SOLID STATE IMAGING DEVICE - A solid state imaging device | 10-31-2013 |
| 20130320477 | METHOD OF ETCHING OF SOI SUBSTRATE, AND BACK-ILLUMINATED PHOTOELECTRIC CONVERSION MODULE ON SOI SUBSTRATE AND PROCESS OF MANUFACTURE THEREOF - A method of etching capable of rapidly and flatly performing wet etching on a Si substrate using fluonitric acid represented by HF(a)HNO | 12-05-2013 |
| 20130334645 | FRONT SIDE IMPLANTED GUARD RING STRUCTURE FOR BACKSIDE - A method of forming a backside illuminated image sensor includes forming a guard ring structure of a predetermined depth in a front-side surface of a semiconductor substrate, the guard ring structure outlining a two-dimensional array of pixels, each pixel of the array of pixels separated from an adjacent pixel by the guard ring structure. The method further includes forming at least one image sensing element on the front-side surface of the semiconductor substrate, the at least one image sensing element being formed in a pixel of the array of pixels and surrounded by the guard ring structure. The method further includes reducing a thickness of the semiconductor substrate until the guard ring structure is co-planar with a back-side surface of the semiconductor substrate. | 12-19-2013 |
| 20140035088 | SEMICONDUCTOR IMAGE SENSOR MODULE, METHOD FOR MANUFACTURING THE SAME AS WELL AS CAMERA AND METHOD FOR MANUFACTURING THE SAME - A semiconductor image sensor module | 02-06-2014 |
| 20140084410 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device has an element substrate that is formed with a plurality of photodiodes, a back-surface electrode, and an electric charge discharging path. A wiring layer for controlling the photodiodes is formed in a front surface of the element substrate. Light is incident upon the photodiodes from a back surface of the element substrate. By applying the back-surface electrode with a voltage in accordance with timing of operation control of the photodiodes, a potential is modulated in the vicinity of the back surface of the element substrate. When an electron inversion layer formed in the vicinity of the back surface of the element substrate upon applying a positive voltage to the back-surface electrode is coupled to a region for accumulating signal charge through a monotonously changing potential gradient, the electric charge that has flowed into the electron inversion layer is discharged through the electric charge discharging path. | 03-27-2014 |
| 20140110812 | BACKSIDE ILLUMINATION IMAGE SENSOR, MANUFACTURING METHOD THEREOF AND IMAGE-CAPTURING DEVICE - A backside illumination image sensor equipped with a plurality of pixels disposed in a two-dimensional pattern, includes: image-capturing pixels; and focus detection pixels. | 04-24-2014 |
| 20140159190 | Backside Structure and Methods for BSI Image Sensors - BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer. | 06-12-2014 |
| 20140217541 | BACK-SIDE ILLUMINATED IMAGE SENSOR WITH A JUNCTION INSULATION - A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer. | 08-07-2014 |
| 20140217542 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is formed by bonding two or more semiconductor chip units to each other and in which, at least, a pixel array and a multi-layer wiring layer are formed in a first semiconductor chip unit and a logic circuit and a multi-layer wiring layer are formed in a second semiconductor chip unit; a semiconductor-removed region in which a semiconductor section of a part of the first semiconductor chip unit is completely removed; and a plurality of connection wirings which is formed in the semiconductor-removed region and connects the first and second semiconductor chip units to each other. | 08-07-2014 |
| 20140246748 | IMAGE SENSORS WITH SMALL PIXELS HAVING HIGH WELL CAPACITY - An image sensor having small pixels with high charge storage capacity, low dark current, no image lag, and good blooming control may be provided. The high charge storage capacity is achieved by placing a p+ type doped layer under the pixel charge storage region with an opening in it for allowing photo-generated charge carriers to flow from the silicon hulk to the charge storage well located near the surface of the photodiode. A compensating n-type doped implant may be formed in the opening. Image lag is prevented by placing a p− type doped region under the p+ type doped photodiode pinning layer and aligned with the opening. Blooming control is achieved by adjusting the length of the transfer gate in the pixel and thereby adjusting the punch-through potential under the gate. | 09-04-2014 |
| 20140264706 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections. | 09-18-2014 |
| 20140264707 | NOVEL CONDITION BEFORE TMAH IMPROVED DEVICE PERFORMANCE - The present disclosure relates to a back-side illuminated CMOS image sensor (BSI CIS). In some embodiments, the BSI CSI has a semiconductor substrate with a front-side and a back-side. A plurality of photodetectors are located within the front-side of the semiconductor substrate. An implantation region is located within the semiconductor substrate at a position separated from the plurality of photodetectors. The implantation region is disposed below the plurality of photodetectors and has a non-uniform doping concentration along a lateral plane parallel to the back-side of the semiconductor substrate. The non-uniform doping concentration allows for the BSI CSI to achieve a small total thickness variation (TTV) between one or more photodetectors and a back-side of a thinned semiconductor substrate that provides for good device performance. | 09-18-2014 |
| 20150137302 | High Speed Backside Illuminated, Front Side Contact Photodiode Array - The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of photodiodes with front metallic cathode pads, front metallic anode pad, back metallic cathode pads, n+ doped regions and a p+ doped region. The front metallic cathode pads physically contact the n+ doped regions and the front metallic anode pad physically contacts the p+ doped region. The back metallic cathode pads physically contact the n+ doped region. | 05-21-2015 |
| 20150145093 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor includes a substrate having a front side and a back side, an insulating structure containing circuits on the front side of the substrate, contact holes extending through the substrate to the circuits, respectively, and a plurality of pads disposed on the backside of the substrate, electrically connected to the circuits along conductive paths extending through the contact holes, and located directly over the circuits, respectively. The image sensor is fabricated by a process in which a conductive layer is formed on the back side of the substrate and patterned to form the pads directly over the circuits. | 05-28-2015 |
| 20150294998 | Sensor and Lithographic Apparatus - A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate. | 10-15-2015 |
| 20160020234 | SOLID-STATE IMAGE PICKUP DEVICE, ELECTRONIC APPARATUS USING SUCH SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE - A back-illuminated type solid-state image pickup device ( | 01-21-2016 |
| 20160056197 | Image Sensor Devices and Design and Manufacturing Methods Thereof - Image sensor devices, design methods thereof, and manufacturing methods thereof are disclosed. In some embodiments, a design method for an image sensor device includes providing an initial design for an image sensor device. The initial design includes a pixel array region and a through-via region disposed proximate the pixel array region. The initial design has a first length between the pixel array region and the through-via region. The initial design has a second length that is a width of the through-via region. The design method includes analyzing a ratio of the second length and the first length, and modifying the initial design to achieve an optimal ratio of the second length and the first length. | 02-25-2016 |
| 20160079296 | SOLID-STATE IMAGE SENSOR AND ELECTRONIC DEVICE - There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers. | 03-17-2016 |
| 20160254299 | SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD | 09-01-2016 |
