| Entries |
| Document | Title | Date |
|---|
| 20080224242 | PROCESS FOR MANUFACTURING A MEMBRANE OF SEMICONDUCTOR MATERIAL INTEGRATED IN, AND ELECTRICALLY INSULATED FROM, A SUBSTRATE - A process for manufacturing an integrated membrane made of semiconductor material includes the step of forming, in a monolithic body of semiconductor material having a front face, a buried cavity, extending at a distance from the front face and delimiting with the front face a surface region of the monolithic body, the surface region forming a membrane that is suspended above the buried cavity. The process further envisages the step of forming an insulation structure in a surface portion of the monolithic body to electrically insulate the membrane from the monolithic body; and the further and distinct step of setting the insulation structure at a distance from the membrane so that it will be positioned outside the membrane at a non-zero distance of separation. | 09-18-2008 |
| 20080290431 | Nanorod sensor with single-plane electrodes - A nanorod sensor with a single plane of horizontally-aligned electrodes and an associated fabrication method are provided. The method provides a substrate and forms an intermediate electrode overlying a center region of the substrate. The intermediate electrode is a patterned bottom noble metal/Pt/Ti multilayered stack. TiO | 11-27-2008 |
| 20090096041 | SEMICONDUCTOR DEVICE - A semiconductor device is designed such that a semiconductor sensor chip having a diaphragm for detecting pressure variations based on the displacement thereof is fixed onto the upper surface of a substrate having a rectangular shape, which is covered with a cover member so as to form a hollow space embracing the semiconductor sensor chip between the substrate and the cover member. Herein, the substrate is sealed with a molded resin such that chip connection leads packaging leads are partially exposed externally of the molded resin; the chip connection leads are electrically connected to the semiconductor sensor chip and are disposed in line along one side of the semiconductor sensor chip; and the packaging leads are positioned opposite the chip connection leads by way of the semiconductor sensor chip. Thus, it is possible to downsize the semiconductor device without substantially changing the size of the semiconductor sensor chip. | 04-16-2009 |
| 20090108382 | TRANSDUCER FOR USE IN HARSH ENVIRONMENTS - A pressure sensor for use in a harsh environment including a substrate and a sensor die directly coupled to the substrate by a bond frame positioned between the substrate and the sensor die. The sensor die includes a generally flexible diaphragm configured to flex when exposed to a sufficient differential pressure thereacross. The sensor further includes a piezoelectric or piezoresistive sensing element at least partially located on the diaphragm such that the sensing element provides an electrical signal upon flexure of the diaphragm. The sensor also includes an connecting component electrically coupled to the sensing element at a connection location that is fluidly isolated from the diaphragm by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the sensing element by the same materials of the bond frame. | 04-30-2009 |
| 20090121299 | Wafer level sensing package and manufacturing process thereof - A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photoresist layer on the stress release layer; patterning the photoresist layer to expose the pads and a portion of the stress release layer, without exposing opening areas of the sensing areas; forming a conductive metal layer of re-distributed pads on the portion of the stress release layer exposed by the photoresist layer; removing the photoresist layer; forming a re-cladding photoresist layer on the stress release layer and the conductive metal layer; forming holes in the re-cladding photoresist layer above the re-distributed pad area; and forming conductive bumps in the holes to electrically connect to the conductive metal layer. | 05-14-2009 |
| 20090127640 | METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT, AS WELL AS A SEMICONDUCTOR COMPONENT, IN PARTICULAR A MEMBRANE SENSOR - A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate. | 05-21-2009 |
| 20090146230 | SEMICONDUCTOR PRESSURE SENSOR, METHOD FOR PRODUCING THE SAME, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS - A semiconductor pressure sensor includes: a first substrate; a buried insulating film laminated on the first substrate; a second substrate laminated on the buried insulating film; a plurality of electrodes including a lower electrode and at least two upper electrodes, the lower electrode being formed on the second substrate; and a piezoelectric film laminated on the lower electrode and having the upper electrodes formed thereon. In the sensor, there is removed at least a portion of a region of the first substrate corresponding to a region of the second substrate including the piezoelectric film and the electrodes. | 06-11-2009 |
| 20090152656 | SENSOR DEVICE AND PRODUCTION METHOD THEREFOR - A compact sensor device having stable sensor characteristics and the production method are provided. The sensor device is formed with a sensor substrate and a pair of package substrates bonded to both surface of the sensor substrate. The sensor substrate has a frame with an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Surface-activated regions are formed on the frame of the sensor substrate and the package substrates by use of an atomic beam, an ion beam or a plasma of an inert gas. By forming a direct bonding between the surface-activated regions of the sensor substrate and each of the package substrates at room temperature, it is possible to avoid inconvenience resulting from residual stress at the bonding portion. | 06-18-2009 |
| 20090194831 | INTEGRATED CAVITY IN PCB PRESSURE SENSOR - Described herein is an integrated pressure sensor assembly. The integrated pressure sensor assembly includes a printed circuit board assembly comprising a plurality of boards; a pressure die mounted on at least a portion of the printed circuit board assembly; and a housing engaged to the printed circuit board assembly. The printed circuit board assembly includes at least one pressure transmission channel and at least one electrical transmission channel. | 08-06-2009 |
| 20090200620 | Mems transducer and manufacturing method therefor - An MEMS transducer is constituted of a diaphragm, a plate, a support structure for supporting the diaphragm and the plate with a gap layer surrounded by an interior wall, an electrode film (e.g. a pad conductive film) for covering a contact hole formed in the support structure, and a protective film (e.g. a pad protective film) which is formed on the support structure externally of the interior wall so as to cover the side surface of the electrode film having low chemical stability. The protective film is formed in the limited area including a part of the surface of the electrode film except for its center portion and the surrounding area of the electrode film. This allows the protective film to use materials having high membrane stress such as silicon nitride or silicon nitride oxide. | 08-13-2009 |
| 20090206422 | Micromechanical diaphragm sensor having a double diaphragm - A method for producing a micromechanical diaphragm sensor, and a micromechanical diaphragm sensor produced with the method. The micromechanical diaphragm sensor has at least one first diaphragm as well as a second diaphragm, which is disposed essentially on top of the first diaphragm. Furthermore, the micromechanical diaphragm sensor has a first cavity and a second cavity, which is essentially disposed above the first cavity. | 08-20-2009 |
| 20090206423 | Method for manufacturing micromechanical components - The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap. | 08-20-2009 |
| 20090212378 | Method for producing a micromechanical structural element and semiconductor arrangement - The method serves for producing a micromechanical structure element ( | 08-27-2009 |
| 20090230487 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND LID FRAME - A semiconductor device includes: a substrate; a semiconductor chip that is fixed to a first surface of the substrate; a chip covering lid body that is provided on the first surface of the substrate so as to cover the semiconductor chip and that forms a hollow first space portion that surrounds the semiconductor chip, and in which there is provided a substantially cylindrical aperture portion that extends to the outer side of the first space portion and has an aperture end at a distal end thereof and that is connected to the first space portion; and a first resin mold portion that forms the first space portion via the chip covering lid body and covers the substrate such that the aperture end is exposed, and that fixes the substrate integrally with the chip covering lid body. | 09-17-2009 |
| 20090256218 | MEMS DEVICE HAVING A LAYER MOVABLE AT ASYMMETRIC RATES - A microelectromechanical (MEMS) device includes a substrate and a movable layer mechanically coupled to the substrate. The movable layer moves from a first position to a second position at a first rate and from the second position to the first position at a second rate faster than the first rate. The MEMS device further includes an adjustable cavity defined between the substrate and the movable layer and containing a fluid. The MEMS device further includes a fluid conductive element through which the fluid flows at a first flowrate from inside the cavity to outside the cavity upon movement of the movable layer from the second position to the first position and through which the fluid flows at a second flowrate slower than the first flowrate from outside the cavity to inside the cavity upon movement of the movable layer from the first position to the second position. | 10-15-2009 |
| 20090256219 | METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT, AS WELL AS A SEMICONDUCTOR COMPONENT, IN A PARTICULAR A DIAPHRAGM SENSOR - A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces. | 10-15-2009 |
| 20090278217 | MEMS DEVICE - A micro-electrical-mechanical device comprises: a transducer arrangement having at least a membrane being mounted with respect to a substrate; and electrical interface means for relating electrical signals to movement of the membrane; in which the transducer arrangement comprises stress alleviating formations which at least partially decouple the membrane from expansion or contraction of the substrate. | 11-12-2009 |
| 20090283846 | BACKSIDE CONTROLLED MEMS CAPACITIVE SENSOR AND INTERFACE AND METHOD - Described herein is the sense element assembly for a capacitive pressure sensor and method for creating same that has increased sensitivity despite the parasitic capacitance that is created. The capacitive sensor element assembly, comprises a first semiconductive layer, and a first conductive layer, a first dielectric layer into which a cavity has been formed, the dielectric layer lying between the first semiconductive layer and the first conductive layer, wherein an electrical connection is made to the second conductive layer. A preferred method for fabricating a capacitive sensor assembly of the present invention comprises the steps of forming a dielectric layer on top of a conductive handle wafer; creating at least one cavity in the dielectric layer, bonding a thin semiconductive layer to the dielectric layer and connecting an operational amplifier to the input of the capacitive sensor assembly to overcome the parasitic capacitance formed during fabrication. | 11-19-2009 |
| 20090289315 | SEMICONDUCTOR SENSOR AND MANUFACTURING METHOD OF SENSOR BODY FOR SEMICONDUCTOR SENSOR - A semiconductor sensor of which the thickness may be reduced and a method of manufacturing a sensor body for the semiconductor sensor are provided. A total length L | 11-26-2009 |
| 20100025786 | Method for Manufacturing a Diaphragm on a Semiconductor Substrate and Micromechanical Component Having Such a Diaphragm - A method for manufacturing a diaphragm, on a semiconductor substrate, includes the method operations or tasks of a) providing a semiconductor substrate, b) producing trenches in the semiconductor substrate, webs made of semiconductor substrate remaining between the trenches, c) producing an oxide layer on the walls of the trenches with the aid of a thermal oxidation method, d) producing access openings in a cover layer produced in a preceding method operation or task on the semiconductor substrate, to expose the semiconductor substrate in the area of the webs, e) isotropic etching of the semiconductor substrate exposed in method operation or task d) using a method selective to the oxide layer and to the cover layer, at least one cavity being produced in the webs below the cover layer, which is laterally delimited by the oxide layer of at least one trench, and f) depositing a sealing layer to seal the access openings in the cover layer. | 02-04-2010 |
| 20100059836 | MEMS DEVICE AND METHOD FOR MANUFACTURING THE SAME - A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane. | 03-11-2010 |
| 20100065934 | TRANSDUCER - A transducer for use in a harsh environment including a substrate and a transducer die directly coupled to the substrate by a bond frame positioned between the substrate and the transducer die. The transducer die includes a transducer element which provides an output signal related to a physical characteristic to be measured, or which receives an input signal and responsively provides a physical output. The transducer further includes a connecting component electrically coupled to the transducer element at a connection location that is fluidly isolated from the transducer element or the surrounding environment by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the transducer element by the same materials of the bond frame, and the connecting component is electrically isolated from the bond frame. | 03-18-2010 |
| 20100090298 | MEMS DIAPHRAGM - A microelectromechanical system (MEMS) diaphragm is provided. The MEMS diaphragm includes a first conductive layer, a second conductive layer and a dielectric layer. The first conductive layer is disposed on a substrate and having a plurality of openings. The dimenisons of the openings are gradually reduced toward the edge of the first conductive layer. The second conductive layer is disposed between the first conductive layer and the substrate. The dielectric layer is partially disposed between the first conductive layer and the second conductive layer, so that a portion of the first conductive layer is suspended. | 04-15-2010 |
| 20100090299 | FLEXIBLE ELECTRONICS FOR PRESSURE DEVICE AND FABRICATION METHOD THEREOF - A pressure device of flexible electronics capable for sensing a large area includes flexible films, electrodes, sensing blocks, and bumps. The flexible films are disposed with intervals and define two spaces. The electrodes and the sensing blocks are disposed on the flexible films and are in a space. The bumps are disposed on the flexible films and are in another space. The air in the spaces maintains a buffer distance of each two adjacent flexible films with the electrodes and the sensing blocks. When the pressure device of flexible electronics is deformed, it is capable of avoiding erroneous signals caused by contact of the sensing block and the electrode or the two sensing blocks disposed on the different flexible films respectively. | 04-15-2010 |
| 20100096714 | METHOD OF MANUFACTURING MEMS SENSOR AND MEMS SENSOR - A method of manufacturing an MEMS sensor according to the present invention includes the steps of: forming a first sacrificial layer on one surface of a substrate; forming a lower electrode on the first sacrificial layer; forming a second sacrificial layer made of a metallic material on the first sacrificial layer to cover the lower electrode; forming an upper electrode made of a metallic material on the second sacrificial layer; forming a protective film made of a nonmetallic material on the substrate to collectively cover the first sacrificial layer, the second sacrificial layer and the upper electrode; and removing at least the second sacrificial layer by forming a through-hole in the protective film and supplying an etchant to the inner side of the protective film through the through-hole. | 04-22-2010 |
| 20100109104 | PRESSURE SENSOR AND WIRE GUIDE ASSEMBLY - A pressure sensor chip is described. The pressure sensor chip include a substrate, a polycrystalline silicon layer, at least one silicon layer, and a diaphragm movement element. The polycrystalline silicon layer is formed on the substrate and has a cavity recess formed therein. The at least one silicon layer is formed on the polycrystalline silicon layer and covers the cavity recess thereby forming a reference chamber with a diaphragm. The diaphragm movement element is configured to sense movement of the diaphragm. An assembly incorporating the pressure sensor chip and a method of forming the pressure sensor chip are also described. | 05-06-2010 |
| 20100109105 | COMPONENT AND METHOD FOR ITS MANUFACTURE - A method for reducing microcrack formation and crack growth in the glass carrier of a component having a micromechanical sensor element that is bonded to the glass carrier. The upper side of the glass carrier acts as a bonding surface for the sensor element. The rear side of the glass carrier, situated opposite the upper side, acts as a mounting surface for the component, and the glass carrier has side surfaces that connect the upper side and the rear side. In particular, the glass carrier is formed by a segment of a glass wafer into which at least the contours of the glass carrier have been stamped, so that at least the areas produced in this way of the side surfaces of the glass carrier and the rear side of the glass carrier form a surface that is largely closed and free of microcracks. | 05-06-2010 |
| 20100140725 | PRESSURE SENSOR - A piezoresistive pressure sensor is especially suitable for measuring smaller pressures and has a small linearity error. The pressure sensor is manufactured from a BESOI wafer having first and second silicon layers and an oxide layer arranged therebetween. The pressure sensor includes, formed from the first silicon layer of the BESOI wafer, an active layer, in which piezoresistive elements are doped, and, formed from the second silicon layer of the BESOI wafer, a membrane carrier, which externally surrounds a cavity in the second silicon layer, via which a membrane forming region of the active layer and an oxide layer associated therewith are exposed, wherein, in an outer edge of the region of the oxide layer exposed by the cavity, a groove is provided surrounding the region. | 06-10-2010 |
| 20100148287 | TRUSS STRUCTURE AND MANUFACTURING METHOD THEREOF - A truss structure is provided. The truss structure comprises a substrate; and plural sub-truss groups disposed on the substrate, wherein each sub-truss group comprises plural VIAs; and plural metal layers interlaced with the plural VIAs, wherein the plural sub-truss groups are piled up on each other to form a 3-D corrugate structure. | 06-17-2010 |
| 20100155866 | HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR - A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum. | 06-24-2010 |
| 20100164027 | METHOD FOR PRODUCING A COMPONENT, AND SENSOR ELEMENT - A method for producing a component having at least one diaphragm formed in the upper surface of the component, which diaphragm spans a cavity, and having at least one access opening to the cavity from the back side of the component, at least one first diaphragm layer and the cavity being produced in a monolithic semiconductor substrate from the upper surface of the component, and the access opening being produced in a temporally limited etching step from the back side of the substrate. The access opening is placed in a region in which the substrate material comes up to the first diaphragm layer. The etching process for producing the access opening includes at least one anisotropic etching step and at least one isotropic etching step, in the anisotropic etching step, an etching channel from the back side of the substrate being produced, which terminates beneath the first diaphragm layer in the vicinity of the cavity, and at least the end region of this etching channel being expanded in the isotropic etching step until the etching channel is connected to the cavity. | 07-01-2010 |
| 20100164028 | SEMICONDUCTOR PRESSURE SENSOR - A semiconductor pressure sensor includes a cavity disposed in one silicon substrate of a SOI substrate having two silicon substrates bonded to each other with an oxide film therebetween and a diaphragm formed from the other silicon substrate and the oxide film, wherein the oxide film, bordering the cavity, of the diaphragm includes an arc-shaped section at the boundary portion to the one silicon substrate defining the inner wall side surface of the cavity, the arc-shaped section having the same diameter as the diameter of the cavity in the one silicon substrate and reducing the cavity diameter from the boundary portion toward the diaphragm center. | 07-01-2010 |
| 20100176469 | MICROMECHANICAL COMPONENT AND METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT - A micromechanical component includes a substrate that has a front side and a backside, the front side having a functional pattern, which functional pattern is electrically contacted to the backside in a contact region. The substrate has at least one contact hole in the contact region, which extends into the substrate, starting from the backside. | 07-15-2010 |
| 20100230768 | SEMICONDUCTOR DEVICE WITH INTEGRATED PIEZOELECTRIC ELEMENTS AND SUPPORT CIRCUITRY - A semiconductor device suitable for use in a pressure sensor is disclosed. A uniformly thin die is provided by chemically etching a backside of a wafer. Piezoelectric elements formed integrally within the die generate electrical signals in response to flexing the die. Conductive leads formed integrally within the die electrically communicate the generated electrical signals to support circuitry formed integrally within the die proximate the piezoelectric elements. In an example embodiment, the piezoresistive elements take the form of silicon resistors formed integrally via doping and diffusion in a Wheatstone bridge configuration. In one application, the die serves as a deformable diaphragm, seated atop an aperture of a threaded pressure sensor housing. | 09-16-2010 |
| 20100276766 | SHIELDING FOR A MICRO ELECTRO-MECHANICAL DEVICE AND METHOD THEREFOR - A device comprises a conductive substrate, a micro electromechanical systems (MEMS) structure, and a plurality of bond pads. The conductive substrate has a first side and a second side, the second side opposite the first side. The MEMS structure is formed over the first side of the conductive substrate. The plurality of bond pads are formed over the first side of the conductive substrate and electrically coupled to the first side of the conductive substrate. The conductive substrate and plurality of bond pads function to provide electrostatic shielding to the MEMS structure. | 11-04-2010 |
| 20100276767 | MEMS MICROPHONE WITH CAVITY AND METHOD THEREFOR - A device comprises a substrate, a micro electro-mechanical systems (MEMS) structure, and a dielectric film. The substrate has a first side and a second side, the second side opposite the first side. The MEMS structure is formed on the first side of the substrate. The cavity is formed in the substrate directly opposite the MEMS structure. The cavity has an opening formed on the second side. The dielectric film is attached to the second side of the substrate and completely covering the opening. In one embodiment, the MEMS structure is a diaphragm for a microphone. Another embodiment includes a method for forming the device. | 11-04-2010 |
| 20100301435 | SENSOR GEOMETRY FOR IMPROVED PACKAGE STRESS ISOLATION - The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package. | 12-02-2010 |
| 20100308426 | PRESSURE MEASURING DEVICE - A pressure measuring device having a pedestal, an intermediate piece of semiconductor arranged on the pedestal and, connected with the pedestal and arranged on the intermediate piece and connected with the intermediate piece, a semiconductor pressure sensor having a support and a measuring membrane, or diaphragm. The pressure measuring device offers reliable protection of the sensitive measuring membrane, or diaphragm, against mechanical distortions. Provided extending in the interior of the i[ntermediate piece is an annular cavity, which surrounds a first cylindrical section and, pedestal end thereof, a second cylindrical section of the intermediate piece. The second cylindrical section has a greater outer diameter than the first cylindrical section. The cavity is open on an end of the intermediate piece toward the pedestal. The second cylindrical section has an end face facing the pedestal and lying on an end face of the pedestal, for forming a connecting area, via which the intermediate piece is mechanically connected with the pedestal. | 12-09-2010 |
| 20100314701 | PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF - A pressure sensor is provided with a sensor chip having a first semiconductor layer and a second semiconductor layer wherein a pressure-sensitive region is a diaphragm. In the pressure-sensitive region, an open section is formed on the first semiconductor layer, and a recessed section is formed on the second semiconductor layer in the pressure-sensitive region. The recessed section on the second semiconductor layer is larger than the opening section on the first semiconductor layer. An insulating layer may be arranged between the first semiconductor layer and the second semiconductor layer. | 12-16-2010 |
| 20100327380 | METHOD OF MANUFACTURING CAPACITIVE ELECTROMECHANICAL TRANSDUCER AND CAPACITIVE ELECTROMECHANICAL TRANSDUCER - In a method of manufacturing a capacitive electromechanical transducer, a first electrode ( | 12-30-2010 |
| 20110001200 | MICROMECHANICAL COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF - A method for manufacturing a micromechanical component and the micromechanical component produced thereby. This component is preferably a diaphragm or a diaphragm layer which is independently produced for the purpose of subsequent assembly with other components. | 01-06-2011 |
| 20110031566 | CONDUCTIVE NANOMEMBRANE, AND MEMS SENSOR OF USING THE SAME - The present invention relates to a conductive nanomembrane and a Micro Electro Mechanical System sensor using the same, and more particularly, a conductive nanomembrane that is formed by stacking a polymer electrolyte film and a carbon nanotube layer, and a MEMS sensor using the same. | 02-10-2011 |
| 20110031567 | PROCESS FOR MANUFACTURING MEMS DEVICES HAVING BURIED CAVITIES AND MEMS DEVICE OBTAINED THEREBY - A process for manufacturing a MEMS device, wherein a bottom silicon region is formed on a substrate and on an insulating layer; a sacrificial region of dielectric is formed on the bottom region; a membrane region, of semiconductor material, is epitaxially grown on the sacrificial region; the membrane region is dug down to the sacrificial region so as to form through apertures; the side wall and the bottom of the apertures are completely coated in a conformal way with a porous material layer; at least one portion of the sacrificial region is selectively removed through the porous material layer and forms a cavity; and the apertures are filled with filling material so as to form a monolithic membrane suspended above the cavity. | 02-10-2011 |
| 20110031568 | STRUCTURE HAVING PLURAL CONDUCTIVE REGIONS AND PROCESS FOR PRODUCTION THEREOF - A structure having a plurality of conductive regions insulated electrically from each other comprises a movable piece supported movably above the upper face of the conductive region, the movable piece having an electrode in opposition to the conductive region, the structure being constructed to be capable of emitting and receiving electric signals through the lower face of the conductive region, the plural conductive regions being insulated by sequentially connected oxidized regions formed from an oxide of a material having through-holes or grooves. | 02-10-2011 |
| 20110057274 | ACCELERATION SENSOR, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane. | 03-10-2011 |
| 20110062535 | MEMS TRANSDUCERS - A MEMS device comprises a substrate having at least a first transducer optimized for transmitting pressure waves, and at least a second transducer optimized for detecting pressure waves. The transducers can be optimised for transmitting or receiving by varying the diameter, thickness or mass of the membrane and/or electrode of each respective transducer. Various embodiments are described showing arrays of transducers, with different configurations of transmitting and receiving transducers. Embodiments are also disclosed having an array of transmitting transducers and an array of receiving transducers, wherein elements in the array of transmitting and/or receiving transducers are arranged to have different resonant frequencies. At least one of said first and second transducers may comprise an internal cavity that is sealed from the outside of the transducer. | 03-17-2011 |
| 20110073969 | SENSOR SYSTEM AND METHOD FOR MANUFACTURING SAME - An assembly and connection technology for a sensor system, including a sensor element having circuit elements integrated into the top side and a carrier for the sensor element, which is simple and robust and which does not require any further packaging measures for protecting the circuit elements and electrical terminals of the sensor elements after the isolation of the sensor elements. For this purpose, the carrier is provided with through contacts. In addition, the sensor element is installed in flip-chip technology on the carrier, so that the top side of the sensor element is at least regionally capped by the carrier and the circuit elements of the sensor element can be electrically contacted from the rear side of the carrier via the through contacts. | 03-31-2011 |
| 20110108936 | PRESSURE DETECTOR AND PRESSURE DETECTOR ARRAY - A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector. | 05-12-2011 |
| 20110115039 | MEMS STRUCTURE AND METHOD FOR MAKING THE SAME - A micro electro mechanical system (MEMS) structure is disclosed. The MEMS structure includes a backplate electrode and a 3D diaphragm electrode. The 3D diaphragm electrode has a composite structure so that a dielectric is disposed between two metal layers. The 3D diaphragm electrode is adjacent to the backplate electrode to form a variable capacitor together. | 05-19-2011 |
| 20110140215 | SEMICONDUCTOR PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A semiconductor pressure sensor comprises: a substrate having a through-hole; a polysilicon film provided on the substrate and having a diaphragm above the through-hole; an insulating film provided on the polysilicon film; first, second, third, and forth polysilicon gauge resistances provided on the insulating film and having a piezoresistor effect; and polysilicon wirings connecting the first, second, third, and forth polysilicon gauge resistances in a bridge shape, wherein each of the first and second polysilicon gauge resistances is disposed on a central portion of the diaphragm and has a plurality of resistors connected in parallel, a structure of the first polysilicon gauge resistance is same as a structure of the second polysilicon gauge resistance, and a direction of the first polysilicon gauge resistance is same as a direction of the second polysilicon gauge resistance. | 06-16-2011 |
| 20110140216 | Method of wafer-level fabrication of MEMS devices - The present disclosure relates to a method of fabricating a micromachined CMOS-MEMS integrated device as well as the devices/apparatus resulting from the method. In the disclosed method, the anisotropic etching (e.g., DRIE) for isolation trench formation on a MEMS element is performed on the back side of a silicon wafer, thereby avoiding the trench sidewall contamination and the screen effect of the isolation beams in a plasma etching process. In an embodiment, a layered wafer including a substrate and a composite thin film thereon is subjected to at least one (optionally at least two) back side anisotropic etching step to form an isolation trench (and optionally a substrate membrane). The method overcomes drawbacks of other microfabrication processes, including isolation trench sidewall contamination. | 06-16-2011 |
| 20110147864 | Method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate - A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity. | 06-23-2011 |
| 20110163399 | Method for Manufacturing Microelectronic Devices and Devices According to Such Methods - A method is disclosed for manufacturing a sealed cavity in a microelectronic device, comprising forming a sacrificial layer at least at locations where the cavity is to be provided, depositing a membrane layer over the top of the sacrificial layer, patterning the membrane layer in at least two separate membrane layer blocks, removing the sacrificial layer through the membrane layer, and sealing the cavity by sealing the membrane layer, wherein patterning the membrane layer is performed after removal of the sacrificial layer. | 07-07-2011 |
| 20110169110 | MEMS DIAPHRAGM - A microelectromechanical system (MEMS) diaphragm is provided. The MEMS diaphragm includes a first conductive layer, a second conductive layer and a first dielectric layer. The first conductive layer is disposed on a substrate and having a plurality of openings. The openings having a first dimension and the openings having a second dimension are arranged alternately, and the first dimension is not equal to the second dimension. The second conductive layer is disposed between the first conductive layer and the substrate. The first dielectric layer is partially disposed between the first conductive layer and the second conductive layer, so that a portion of the first conductive layer is suspended. | 07-14-2011 |
| 20110186945 | MEMS DIAPHRAGM - A microelectromechanical system (MEMS) diaphragm is provided. The MEMS diaphragm includes a first conductive layer, a second conductive layer and a first dielectric layer. The first conductive layer is disposed on a substrate and having a plurality of openings. The openings have the same dimension, and the distance between the adjacent openings is gradually increased toward the edge of the first conductive layer. The second conductive layer is disposed between the first conductive layer and the substrate. The first dielectric layer is partially disposed between the first conductive layer and the second conductive layer, so that a portion of the first conductive layer is suspended. | 08-04-2011 |
| 20110241137 | Integrated Circuit and Fabricating Method thereof - A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive materials. | 10-06-2011 |
| 20110260269 | PIEZORESISTIVE PRESSURE SENSOR - A piezoresistive pressure sensor is provided, which can prevent the occurrence of ESD breakdown due to the nearness of interconnection layers of a resistive element according to miniaturization thereof. The piezoresistive pressure sensor is so configured that respective semiconductor resistive layers on both sides of an arrangement are formed to be relatively longer than an adjacent semiconductor resistive layer, and thus a corner portion of a semiconductor connection layer that extends from the respective semiconductor resistive layers on both sides of the arrangement and a corner portion of the semiconductor interconnection layer that is nearest to the corner portion of the semiconductor connection layer, between which the ESD breakdown occurs easily, can be separated from each other. | 10-27-2011 |
| 20110309458 | A SENSOR AND METHOD FOR FABRICATING THE SAME - A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched first device wafer comprising a silicon on insulator wafer which is then bonded to a second device wafer comprising a silicon on insulator wafer to create a vented, suspended structure, the flexure of which is sensed by an embedded sensing element to measure differential pressure. In one embodiment, interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices. | 12-22-2011 |
| 20120001278 | SEMICONDUCTOR PHYSICAL QUANTITY SENSOR - A semiconductor physical quantity sensor includes a sensor chip, a support member for fixing the sensor chip to a fixing position and an adhesive bonding the sensor chip with the support member. The sensor chip includes a semiconductor substrate and a chip base supporting the semiconductor substrate. The semiconductor substrate is provided with a sensing portion for detecting a physical quantity. The chip base is bonded with the support member through the adhesive. The adhesive is provided by a mixture of an adhesive base material mainly made of a resin and a granular material mainly made of a cross-linked resin. | 01-05-2012 |
| 20120025337 | MEMS TRANSDUCER DEVICE HAVING STRESS MITIGATION STRUCTURE AND METHOD OF FABRICATING THE SAME - A micro-electromechanical systems (MEMS) transducer device mounted to a package substrate includes an active transducer having a resonator stack formed over a cavity through a transducer substrate, and a stress mitigation structure between the transducer substrate and the package substrate. The stress mitigation structure reduces stress induced on the transducer substrate due to mismatched coefficients of thermal expansion (CTEs) of the transducer substrate and the package substrate, respectively. | 02-02-2012 |
| 20120104521 | METHOD AND SYSTEM FOR ETCHING A DIAPHRAGM PRESSURE SENSOR - A method for etching a diaphragm pressure sensor based on a hybrid anisotropic etching process. A substrate with an epitaxial etch stop layer can be etched utilizing an etching process in order to form a diaphragm at a selective portion of the substrate. The diaphragm can be oriented at an angle (e.g., 45 degree) with respect to the substrate in order to avoid an uncertain beveled portion in a stress/strain field of the diaphragm. The diaphragm can be further etched utilizing an etch finishing process to create an anisotropic edge portion on the major areas of the diaphragm and optimize the thickness and size of the diaphragm. Such an approach provides an enhanced diaphragm structure with respect to a wide range of pressure sensor applications. | 05-03-2012 |
| 20130056841 | MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) DEVICE AND METHOD FOR FABRICATING THE SAME - A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm. | 03-07-2013 |
| 20130062713 | PRESSURE SENSOR AND METHOD FOR MANUFACTURING PRESSURE SENSOR - [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. | 03-14-2013 |
| 20130087864 | SEMICONDUCTOR COMPONENT - A semiconductor component is provided with a semiconductor substrate, in the upper face of which an active region made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length and width is designed within the active region. Each of the ends of the channel region located in the longitudinal extension is followed by a contacting region made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material, which comprises transverse edges defining the length of the channel region and longitudinal edges defining the width of the channel region and which comprises an edge recess at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions that adjoin the channel region extending all the way into said edge recess. | 04-11-2013 |
| 20130087865 | MICRO-ELECTROMECHANICAL SEMICONDUCTOR COMPONENT - The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions. | 04-11-2013 |
| 20130087866 | MICRO-ELECTROMECHANICAL SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF - The micro-electromechanical semiconductor component is provided with a first silicon semiconductor substrate having an upper face, into which a cavity delimited by side walls and a floor wall is introduced, and having a second silicon semiconductor substrate comprising a silicon oxide layer and a polysilicon layer applied thereon having a defined thickness. The polysilicon layer of the second silicon semiconductor substrate faces the upper side of the first silicon semiconductor substrate, the two silicon semiconductor substrates are bonded, and the second silicon semiconductor substrate covers the cavity in the first silicon semiconductor substrate. Grooves that extend up to the polysilicon layer are arranged in the second silicon semiconductor substrate in the region of the section thereof that covers the cavity. | 04-11-2013 |
| 20130087867 | Method for operating CMUTs under high and varying pressure - Capacitive micromachined ultrasonic transducers (CMUTs) in permanent contact mode are provided. Such a CMUT always has its plate in contact with the substrate, even for zero applied electrical bias. This contact is provided by the pressure difference between the environment, and the pressure of the evacuated region between the CMUT plate and substrate. Due to this permanent contact, the electric field in the gap for a given DC bias voltage will be larger, which provides improved coupling efficiency at lower DC bias voltages. Furthermore, in an environment with high and varying pressure, the plate will not shift between the conventional mode and the collapsed mode, but will only be pushed down with varying contact radius. In some embodiments, an electrode shaped as an annulus is employed, so that only the active vibrating part of the CMUT plate sees the applied DC and AC voltages. | 04-11-2013 |
| 20130105922 | SEMICONDUCTOR PRESSURE SENSOR AND METHOD OF MANUFACTURING SEMICONDUCTOR PRESSURE SENSOR | 05-02-2013 |
| 20130105923 | DEEP WELL PROCESS FOR MEMS PRESSURE SENSOR | 05-02-2013 |
| 20130126994 | CAPACITIVE PRESSURE SENSOR AND METHOD FOR MANUFACTURING SAME - The capacitive pressure sensor comprises: a substrate functioning as a lower electrode; a first insulating film formed on the substrate; a cavity formed on the first insulating film; a second insulating film formed on the first insulating film to have openings communicated with the cavity and to cover the cavity; a sealing film formed of a conductive material to seal the openings and to extend partially into the cavity through the openings; and an upper electrode formed on the second insulating film to be electrically separated from the sealing film and to overlap the cavity. | 05-23-2013 |
| 20130193536 | METHOD OF MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A MEMS ELEMENT - In a method of manufacturing a semiconductor integrated circuit device having an MEMS element over a single semiconductor chip, the movable part of the MEMS element is fixed before the formation of a rewiring. After formation of the rewiring, the wafer is diced. Then, the movable part of the MEMS element is released by etching the wafer. | 08-01-2013 |
| 20130207208 | Pressure Sensor with Doped Electrode - In one embodiment, a sensor device includes a bulk silicon layer, a first doped region of the bulk silicon layer of a first dopant type, a second doped region of the bulk silicon layer of a second dopant type, wherein the first dopant type is a type of dopant different from the second dopant type, the second doped region located at an upper surface of the bulk silicon layer and having a first doped portion bounded by the first doped region, a first cavity portion directly above the second doped region, and an upper electrode formed in an epitaxial layer, the upper electrode directly above the first cavity portion. | 08-15-2013 |
| 20130214369 | PRESSURE SENSOR - The present disclosure relates to pressure sensor assemblies and methods. The pressure sensor assembly may include a first substrate, a second substrate and a sense die. The first substrate may be connected to the second substrate, such that an aperture in the first substrate is in fluid communication with an aperture in the second substrate. The second substrate may be connected to the sense die, such that the aperture in the second substrate is in fluid communication with a sense diaphragm on the second substrate. The pressure sensor assembly may include a media path that extends through the aperture in the first substrate, through the aperture in the second substrate, and to the sense die. In some cases, the first substrate, the second substrate and the sense die may be connected in a manner that does not include an adhesive. | 08-22-2013 |
| 20130320467 | METHOD FOR ASSEMBLING CONDUCTIVE PARTICLES INTO CONDUCTIVE PATHWAYS AND SENSORS THUS FORMED - A sensor is achieved by applying a layer of a mixture that contains polymer and conductive particles over a substrate or first surface, when the mixture has a first viscosity that allows the conductive particles to rearrange within the material. An electric field is applied over the layer, so that a number of the conductive particles are assembled into one or more chain-like conductive pathways with the field and thereafter the viscosity of the layer is changed to a second, higher viscosity, in order to mechanically stabilise the material. The conductivity of the pathway is highly sensitive to the deformations and it can therefore act as deformation sensor. The pathways can be transparent and is thus suited for conductive and resistive touch screens. Other sensors such as strain gauge and vapour sensor can also be achieved. | 12-05-2013 |
| 20130341740 | COMPENSATION OF STRESS EFFECTS ON PRESSURE SENSOR COMPONENTS - Pressure sensors having components with reduced variations due to stresses caused by various layers and components that are included in the manufacturing process. In one example, a first stress in a first direction causes a variation in a component. A second stress in a second direction is applied, thereby reducing the variation in the component. The first and second stresses may be caused by a polysilicon layer, while the component may be a resistor in a Wheatstone bridge. | 12-26-2013 |
| 20130341741 | RUGGEDIZED MEMS FORCE DIE - Described herein are ruggedized wafer level MEMS force dies composed of a platform and a silicon sensor. The silicon sensor employs multiple flexible sensing elements containing Piezoresistive strain gages and wire bonds. | 12-26-2013 |
| 20130341742 | WAFER LEVEL MEMS FORCE DIES - A composite wafer level MEMS force dies including a spacer coupled to a sensor is described herein. The sensor includes at least one flexible sensing element, such as a beam or diaphragm, which have one or more sensor elements formed thereon. Bonding pads connected to the sensor elements are placed on the outer periphery of the sensor. The spacer, which protects the flexible sensing element and the wire bonding pads, is bonded to the sensor. For the beam version, the bond is implemented at the outer edges of the die. For the diaphragm version, the bond is implemented in the center of the die. An interior gap between the spacer and the sensor allows the flexible sensing element to deflect. The gap can also be used to limit the amount of deflection of the flexible sensing element in order to provide overload protection. | 12-26-2013 |
| 20140001584 | MEMS PRESSURE SENSOR AND MANUFACTURING METHOD THEREFOR | 01-02-2014 |
| 20140021565 | SENSOR PACKAGE - A sensor package has a semiconductor sensor chip, and a package body that has a semiconductor sensor chip mounting region on which the semiconductor sensor chip is mounted. The package body being a resin injection molded product. A groove is formed in a rear surface on an opposite side to a surface, on which the semiconductor sensor chip is mounted, so as to surround the semiconductor sensor chip mounting region. A coupling section is formed in the rear surface to couple a resin portion inside the groove and a resin portion outside the groove. | 01-23-2014 |
| 20140054732 | METHOD AND APPARATUS FOR RELEASE-ASSISTED MICROCONTACT PRINTING OF MEMS - The disclosure provides methods and apparatus for release-assisted microcontact printing of MEMS. Specifically, the principles disclosed herein enable patterning diaphragms and conductive membranes on a substrate having articulations of desired shapes and sizes. Such diaphragms deflect under applied pressure or force (e.g., electrostatic, electromagnetic, acoustic, pneumatic, mechanical, etc.) generating a responsive signal. Alternatively, the diaphragm can be made to deflect in response to an external bias to measure the external bias/phenomenon. The disclosed principles enable transferring diaphragms and/or thin membranes without rupturing. | 02-27-2014 |
| 20140084396 | MEMS DEVICE AND PROCESS - A MEMS capacitive transducer with increased robustness and resilience to acoustic shock. The transducer structure includes a flexible membrane supported between a first volume and a second volume, and at least one variable vent structure in communication with at least one of the first and second volumes. The variable vent structure includes at least one moveable portion which is moveable in response to a pressure differential across the moveable portion so as to vary the size of a flow path through the vent structure. The variable vent may be formed through the membrane and the moveable portion may be a part of the membrane, defined by one or more channels, that is deflectable away from the surface of the membrane. The variable vent is preferably closed in the normal range of pressure differentials but opens at high pressure differentials to provide more rapid equalisation of the air volumes above and below the membrane. | 03-27-2014 |
| 20140084397 | WAFER-LEVEL PACKAGING OF A MEMS INTEGRATED DEVICE AND RELATED MANUFACTURING PROCESS - A wafer-level package for a MEMS integrated device, envisages: a first body integrating a micromechanical structure; a second body having an active region integrating an electronic circuit, coupled to the micromechanical structure; and a third body defining a covering structure for the first body. The second body defines a base portion of the package and has an inner surface coupled to which is the first body, and an outer surface provided on which are electrical contacts towards the electronic circuit; a routing layer has an inner surface set in contact with the outer surface of the second body and an outer surface that carries electrical contact elements towards the external environment. The third body defines a covering portion for covering the package and is directly coupled to the second body for closing a housing space for the first body. | 03-27-2014 |
| 20140091409 | APPLICATIONS OF CONTACT-TRANSFER PRINTED MEMBRANES - The disclosed embodiments provide sensitive pixel arrays formed using solvent-assisted or unassisted release processes. Exemplary devices include detectors arrays, tunable optical instruments, deflectable mirrors, digital micro-mirrors, digital light processing chips, tunable optical micro-cavity resonators, acoustic sensors, acoustic actuators, acoustic transducer devices and capacitive zipper actuators to name a few. | 04-03-2014 |
| 20140091410 | Method and Apparatus for Fabricating Piezoresistive Polysilicon by Low-Temperature Metal Induced Crystallization - The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600° C. and a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer. | 04-03-2014 |
| 20140103468 | MICRO-ELECTROMECHANICAL PRESSURE SENSOR HAVING REDUCED THERMALLY-INDUCED STRESS - Thermally-induced stress on a silicon micro-electromechanical pressure transducer (MEMS sensor) is reduced by attaching the MEMS sensor to a plastic filled with low C | 04-17-2014 |
| 20140131821 | PRESSURE SENSING DEVICE HAVING CONTACTS OPPOSITE A MEMBRANE - Pressure sensors that may be used in harsh or corrosive environments. One example may provide a pressure sensor having membrane with a top surface that may be free of components or electrical connections. Instead, components and electrical connections may be located under the membrane. By providing a top surface free of components and electrical connections, the top surface of the pressure sensor may be placed in harsh or corrosive environments, while components and electrical connections under the membrane may remain protected. | 05-15-2014 |
| 20140175573 | SOI WAFER, MANUFACTURING METHOD THEREFOR, AND MEMS DEVICE - In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer ( | 06-26-2014 |
| 20140217523 | Housing for a Semiconductor Chip and Semiconductor Chip with a Housing - A housing for a semiconductor chip has an injection molded body, in which an accommodating area for accommodating the semiconductor chip is provided. The injection-molded body has at least one metallization for making electrical contact with the semiconductor chip. | 08-07-2014 |
| 20140231939 | CAPACITIVE PRESSURE SENSOR AND METHOD - In one embodiment, a method of forming a MEMS device includes providing a silicon wafer with a base layer and an intermediate layer above an upper surface of the base layer. A first electrode is defined in the intermediate layer and an oxide portion is provided above an upper surface of the intermediate layer. A cap layer is provided on an upper surface of the oxide portion and a second electrode is defined in the cap layer. The method further includes etching the oxide portion to form a cavity such that when the second electrode and the cavity are projected onto the intermediate layer, the projected second electrode encompasses the projected cavity. | 08-21-2014 |
| 20140239424 | CAP BONDING STRUCTURE AND METHOD FOR BACKSIDE ABSOLUTE PRESSURE SENSORS - A pressure sensor includes a pressure sensing element having a diaphragm, a cavity, and bridge circuitry connected to the diaphragm. A top surface is formed as part of the pressure sensing element such that at least a portion of the top surface is part of the diaphragm, and the plurality of piezoresistors are located on the top surface. A cap is bonded to the top surface through the use of a plurality of layers. One of the layers is a silicon dioxide layer, another layer is a silicon nitride layer, another layer is an oxide layer, and another of the layers is a polysilicon layer. The plurality of layers provides proper bonding between the cap and the top surface of the pressure sensing element. | 08-28-2014 |
| 20140246740 | IMPLANTATION OF GASEOUS CHEMICALS INTO CAVITIES FORMED IN INTERMEDIATE DIELECTRICS LAYERS FOR SUBSEQUENT THERMAL DIFFUSION RELEASE - The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the landing velocity on switching by introducing gas into the cavity surrounding the switching element of the MEMS device. The gas is introduced using ion implantation into a cavity close to the cavity housing the switching element and connected to that cavity by a channel through which the gas can flow from one cavity to the other. The implantation energy is chosen to implant many of the atoms close to the inside roof and floor of the cavity so that on annealing those atoms diffuse into the cavity. The gas provides gas damping which reduces the kinetic energy of the switching MEMS device which then should have a longer lifetime. | 09-04-2014 |
| 20140264662 | MEMS Integrated Pressure Sensor and Microphone Devices and Methods of Forming Same - A method embodiment for forming a micro-electromechanical (MEMS) device includes providing a MEMS wafer, wherein a portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer, and the carrier wafer is etched to expose the first membrane for the microphone device to an ambient environment. A MEMS substrate is patterned and portions of a first sacrificial layer are removed of the MEMS wafer to form a MEMS structure. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure. A second sealed cavity and a cavity exposed to an ambient environment on opposing sides of the second membrane for the pressure sensor device are formed. | 09-18-2014 |
| 20140306301 | SILICON SUBSTRATE MEMS DEVICE - A MEMS device includes a silicon substrate. The silicon substrate includes a plurality of dielectric material grooves spaced apart from each other. The silicon substrate also includes a through hole with a portion of the through hole being located between the plurality of dielectric material grooves when viewed from a direction perpendicular to a surface of the silicon substrate. | 10-16-2014 |
| 20140339659 | Method of Manufacturing A Semiconductor Integrated Circuit Device Having A MEMS Element - In a method of manufacturing a semiconductor integrated circuit device having an MEMS element over a single semiconductor chip, the movable part of the MEMS element is fixed before the formation of a rewiring. After formation of the rewiring, the wafer is diced. Then, the movable part of the MEMS element is released by etching the wafer. | 11-20-2014 |
| 20140374858 | CAPACITIVE PRESSURE SENSOR AND A METHOD OF FABRICATING THE SAME - The invention discloses a capacitive pressure sensor and a method of fabricating the same. The capacitive pressure sensor includes a fixed plate configured as a back plate, a movable plate configured as diaphragm for sensing pressure, wherein a cavity is formed between the fixed plate and the movable plate, an isolation layer between the fixed plate and the movable plate and electrical contacts thereof for minimizing the leakage current, plurality of damping holes for configuring the contour of the fixed plate as the deflected diaphragm when pressure is exerted, a vent hole extending to the cavity having resistive air path for providing equilibrium to the diaphragm and an extended back chamber for increasing the sensitivity of the capacitive pressure sensor. The capacitive pressure sensor is also configured for minimizing parasitic capacitance. | 12-25-2014 |
| 20140374859 | SENSOR DEVICE - A sensor device has a substrate, a sensor section provided on an upper surface of the substrate, a circuit section provided on the upper surface of the substrate, a plurality of connection pads that electrically conduct with the sensor section or the circuit section, and a metal protective film covering at least a part of the circuit section from above. | 12-25-2014 |
| 20150021723 | MECHANISMS FOR FORMING MICRO-ELECTRO MECHANICAL SYSTEM DEVICE - Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS structure over the substrate, and the MEMS structure has a movable element. The movable element is surrounded by a cavity. The MEMS device also includes a fuse layer on the movable element, and the fuse layer has a wide portion and a narrow portion linked to the wide portion. | 01-22-2015 |
| 20150076632 | METHOD AND APPARATUS FOR RELEASE-ASSISTED MICROCONTACT PRINTING OF MEMS - The disclosure provides methods and apparatus for release-assisted microcontact printing of MEMS. Specifically, the principles disclosed herein enable patterning diaphragms and conductive membranes on a substrate having articulations of desired shapes and sizes. Such diaphragms deflect under applied pressure or force (e.g., electrostatic, electromagnetic, acoustic, pneumatic, mechanical, etc.) generating a responsive signal. Alternatively, the diaphragm can be made to deflect in response to an external bias to measure the external bias/phenomenon. The disclosed principles enable transferring diaphragms and/or thin membranes without rupturing. | 03-19-2015 |
| 20150102437 | MEMS SENSOR DEVICE WITH MULTI-STIMULUS SENSING AND METHOD OF FABRICATION | 04-16-2015 |
| 20150344292 | MICRO ELECTRO MECHANICAL SYSTEMS COMPONENT AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a MEMS component including: a membrane; a mass body connected to the membrane; and a support connected to the membrane and supporting the mass body in a floated state to be displaced, wherein the membrane has an upper electrode and an upper piezoelectric material disposed on one side thereof and has a lower electrode and a lower piezoelectric material disposed on the other side thereof, based on an insulating adhesive layer. | 12-03-2015 |
| 20150344294 | LEAD FRAME BASED MEMS SENSOR STRUCTURE - A sensor structure is disclosed. The sensor structure may include a lead frame for supporting a MEMS sensor, a recess in a surface of the lead frame, and a MEMS sensor coupled to the surface of the lead frame and arranged over the recess to form a chamber. Alternatively, the lead frame may have a perforation formed through it and the MEMS sensor may be coupled to the surface of the lead frame and arranged over an opening of the perforation. | 12-03-2015 |
| 20150344301 | ELECTRONIC PART, ELECTRONIC APPARATUS, AND MOVING OBJECT - An electronic part includes a bottom portion of a cavity that has an oscillation device, a ceiling portion so disposed that it faces the bottom portion via the cavity and having holes, a shielding portion that is disposed in the cavity and between the bottom portion of the cavity and the ceiling portion and covers the holes in a plan view viewed in the direction in which the bottom portion of the cavity and the ceiling portion are arranged, and sealing portions that are connected to both the ceiling portion and the shielding portion via the holes and seal the holes. | 12-03-2015 |
| 20150368096 | MEMS PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a pressure sensor is provided. The method includes: providing a substrate, wherein a bottom electrode and a pressure sensing film are disposed on the substrate; forming an etch stop assembly on the pressure sensing film at a location corresponding to a pressure trench; forming a cover layer on the substrate covering the etch stop assembly and the pressure sensing film; forming a mask layer on the cover layer, wherein an opening of the mask layer is formed above the etch stop assembly and exposes a portion of the cover layer at the location corresponding to the pressure trench; etching the cover layer using the mask layer so as to form the pressure trench in the cover layer; removing the etch stop assembly at a bottom of the pressure trench; and removing the mask layer. | 12-24-2015 |
| 20160009545 | STRAIN DETECTION ELEMENT, PRESSURE SENSOR, MICROPHONE, BLOOD PRESSURE SENSOR, AND TOUCH PANEL | 01-14-2016 |
| 20160009546 | MEMS PRESSURE SENSOR WITH THERMAL COMPENSATION | 01-14-2016 |
| 20160023890 | Microelectromechanical component and manufacturing method for microelectromechanical components - An MEMS component includes: a substrate into which a cavity is structured from a functional top side; a buried polysilicon layer in which a polysilicon diaphragm which at least partially spans the cavity is exposed as the first electrode; an epi-polysilicon layer in which a conductive structure, which is situated at a distance above the polysilicon diaphragm by a clearance, is exposed as the second electrode; and an access opening which fluidically connects the external surroundings of the MEMS component to the cavity. At least one access channel is formed in at least one of the buried polysilicon layer, the epi-polysilicon layer, and an inner wall of the cavity of the substrate which connects the access opening to the cavity, and whose channel width is not greater than 5 μm. | 01-28-2016 |
| 20160033349 | PRESSURE SENSOR HAVING CAP-DEFINED MEMBRANE - Structures and methods of protecting membranes on pressure sensors. One example may provide a pressure sensor having a backside cavity defining a frame and under a membrane formed in a device layer. The pressure sensor may further include a cap joined to the device layer by a bonding layer. A recess for a reference cavity may be formed in one or more of the cap, bonding layer, and membrane or other device layer portion. The recess may have a width that is narrower than a width of the backside cavity in at least one direction. In other examples, the recess may be shaped such that it has an outer edge that is within an outer edge of the backside cavity. This may reinforce a junction of the device layer and frame. The recess may define an active membrane spaced away from the device layer and backside cavity junction. | 02-04-2016 |
| 20160054188 | PHYSICAL QUANTITY SENSOR, PRESSURE SENSOR, ALTIMETER, ELECTRONIC APPARATUS, AND MOVING OBJECT - A physical quantity sensor includes a semiconductor substrate, a diaphragm section that is disposed on the semiconductor substrate and is flexurally deformed when receiving pressure, a sensor element that is disposed on the diaphragm section, an element-periphery structure member that is disposed on one surface side of the semiconductor substrate and forms a cavity section together with the diaphragm section, and a semiconductor circuit that is provided on the same surface side as the element-periphery structure member of the semiconductor substrate. | 02-25-2016 |
| 20160075553 | Sensor Protective Coating - A microelectromechanical system (MEMS) sensor device includes a substrate, a support structure supported by the substrate, a membrane supported by the support structure and spaced from the substrate, and a polymer layer covering the membrane. | 03-17-2016 |
| 20160101975 | Resonance Frequency Adjustment Module - A resonance frequency adjustment module is disclosed forming a MEMS sensor for detecting an angular velocity. The resonance frequency adjustment module includes a movable electrode; a fixed electrode facing the movable electrode to form a capacitor; and an elastic body supporting the movable electrode so as to be displaceable in one direction. The movable electrode and the fixed electrode have surfaces facing each other to form a capacitor, and the surface can be inclined to a displacement direction. A region sandwiched between the movable electrode and the fixed electrode has a volume fixed region where the volume is not decreased by movement of the movable electrode. | 04-14-2016 |
| 20160101976 | METHOD OF IMPROVING GETTER EFFICIENCY BY INCREASING SUPERFICIAL AREA - In some embodiments, the present disclosure relates to a MEMs (micro-electromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process. | 04-14-2016 |
| 20160107880 | SUBSTRATE FOR DIAPHRAGM-TYPE RESONANT MEMS DEVICES, DIAPHRAGM-TYPE RESONANT MEMS DEVICE AND METHOD FOR MANUFACTURING SAME - A producing method for a diaphragm-type resonant MEMS device includes forming a first silicon oxide film, forming a second silicon oxide film, forming a lower electrode, forming a piezoelectric film, forming an upper electrode, laminating the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order on a first surface of a silicon substrate, and etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching to form a diaphragm structure, in which the proportion R | 04-21-2016 |
| 20160122177 | TRAPPED MEMBRANE - A MEMS trapped membrane. The MEMS trapped membrane includes a first layer and a second structure. The first layer has an outer section and an inner membrane. The outer section and inner membrane are detached from each other by a separation, and have inner membrane protrusions and outer section protrusions formed by the separation. The second structure is coupled to the outer section and has second protrusions that overlay corresponding inner membrane protrusions. | 05-05-2016 |
| 20160122181 | MICROINTEGRATED ENCAPSULATED MEMS SENSOR WITH MECHANICAL DECOUPLING AND MANUFACTURING PROCESS THEREOF - The microintegrated sensor comprises a stack formed by a sensor layer, of semiconductor material, by a cap layer, of semiconductor material, and by an insulating layer. The sensor layer and the cap layer have a respective peripheral portion surrounding a central portion, and the insulating layer extends between the peripheral portions of the sensor layer and of the cap layer. An air gap extends between the central portions of the sensor layer and of the protection layer. A through trench extends into the central portion of the sensor layer as far as the air gap and surrounds a platform housing a sensitive element. The cap layer has through holes in the insulating layer that extend from the air gap and form a fluidic path with the air gap and the through trench. | 05-05-2016 |
| 20160137494 | Electronic Device, Physical Quantity Sensor, Pressure Sensor, Altimeter, Electronic Apparatus, And Moving Object - An physical quantity sensor includes a substrate, a piezoelectric resistive element that is disposed on one surface side of the substrate, a wall portion that is disposed on the one surface side of the substrate so as to surround the piezoelectric resistive element in a plan view of the substrate, and a ceiling portion that is disposed on an opposite side to the substrate with respect to the wall portion and forms a cavity along with the wall portion, in which the wall portion includes an insulating layer, and wiring layers that surround the insulating layer together and have higher resistance to an etchant which can etch the insulating layer than resistance of the insulating layer. | 05-19-2016 |
| 20160155927 | SENSOR DEVICE AND ELECTRONIC APPARATUS | 06-02-2016 |
| 20160159642 | STRESS ISOLATED MEMS DEVICE WITH ASIC AS CAP - A package includes a MEMS die and an integrated circuit (IC) die coupled to and stacked with the MEMS die. The MEMS die includes a substrate having a recess formed therein. A cantilevered platform structure of the MEMS die has a platform and an arm suspended over the recess, where the arm is fixed to the substrate. A MEMS device resides on the platform. The IC die is coupled to the MEMS die to serve as a protective cap for MEMS device. The MEMS die may be a pressure sensor die, and the MEMS device residing on the platform may be a sensor diaphragm. Thus, the IC die can include access vents extending through it for passage of a fluid from an external environment so that the sensor diaphragm can detect the pressure of the fluid. | 06-09-2016 |
| 20160159643 | MEMS Integrated Pressure Sensor Devices Having Isotropic Cavitites and Methods of Forming Same - A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure. | 06-09-2016 |
| 20160159644 | MEMS Integrated Pressure Sensor Devices and Methods of Forming Same - A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment. | 06-09-2016 |
| 20160176702 | INTEGRATED MICRO-ELECTROMECHANICAL DEVICE OF SEMICONDUCTOR MATERIAL HAVING A DIAPHRAGM, SUCH AS A PRESSURE SENSOR AND AN ACTUATOR | 06-23-2016 |
| 20160176704 | MEMS DEVICES AND PROCESSES | 06-23-2016 |
| 20160178467 | PRESSURE SENSOR HAVING CAP-DEFINED MEMBRANE | 06-23-2016 |
| 20170233245 | PRESSURE SENSOR ENCAPSULATED IN ELASTOMERIC MATERIAL, AND SYSTEM INCLUDING THE PRESSURE SENSOR | 08-17-2017 |
