Entries |
Document | Title | Date |
20080251866 | LOW-STRESS HERMETIC DIE ATTACH - A low-stress hermetic die attach apparatus is disclosed. An example apparatus includes a hermetic package, a device disposed within the hermetic package, and one or more elongated structures greater than 2 thousandths of an inch (mils) in length connected to the package at one end and to the device at the other end. In some embodiments, the apparatus includes elongated structures at least 30 mils long or at least 100 mils long and the device includes a microelectromechanical system (MEMS) die that includes accelerometer or gyro components. In some embodiments, the elongated structures include a column or a pin made of an alloy material such as Kovar. In one embodiment, the Kovar pin is gold plated, attached to the package with a high temperature solder, and attached to the die using gold stud bumps. | 10-16-2008 |
20080258246 | PASSIVE ELECTRICALLY TESTABLE ACCELERATION AND VOLTAGE MEASUREMENT DEVICES - Acceleration and voltage measurement devices and methods of fabricating acceleration and voltage measurement devices. The acceleration and voltage measurement devices including an electrically conductive plate on a top surface of a first insulating layer; a second insulating layer on a top surface of the conductive plate, the top surface of the plate exposed in an opening in the second insulating layer; conductive nanotubes suspended across the opening, and electrically conductive contacts to said nanotubes. | 10-23-2008 |
20080265346 | SEMICONDUCTOR SENSOR AND MANUFACTURING METHOD OF THE SAME - A semiconductor sensor and a manufacturing method of the same capable of making the specific gravity of a weight part to be greater than that of a weight part made of semiconductor material only is disclosed. The semiconductor sensor includes the weight part, a supporting part, a flexible part, and plural piezoresistive elements. The weight part includes a weight part photosensitive resin layer made of photosensitive resin in which metal particles are included. The supporting part surrounds and is separated from the weight part. The flexible part is provided between the weight part and the supporting part to support the weight part. The flexible part includes a flexible part semiconductor layer where the plural piezoresistive elements are formed. This configuration allows the specific gravity of the weight part photosensitive resin layer greater than that of the weight part semiconductor layer due to the metal particles. | 10-30-2008 |
20090014820 | Semiconductor mechanical sensor - A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate | 01-15-2009 |
20090218643 | Semiconductor Pressure Sensor - An object of the present invention is to solve problems in that aluminum electrodes, aluminum wires, and I/O terminals are corroded by corrosive gasses when a pressure of a pressure medium containing corrosive matters such as exhaust gas is measured with a semiconductor sensor; and improve not only the corrosion resistance of the sensor chip but also the corrosion resistance of the portion particularly functioning as the pressure receiver. | 09-03-2009 |
20090261430 | Physical quantity sensor and method for manufacturing the same - A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer. | 10-22-2009 |
20090283845 | SENSING APPARATUS WITH PACKAGING MATERIAL AS SENSING PROTECTION LAYER AND METHOD OF MANUFACTURING THE SAME - A sensing apparatus includes a holding substrate, a sensing chip and a protection layer. The sensing chip is mounted on the holding substrate and electrically connected to the holding substrate. The sensing chip has a sensing region and a non-sensing region other than the sensing region. The sensing region senses image data of an object and thus generates a sensed signal outputted to the holding substrate. The protection layer is formed by a packaging material and is simultaneously processed and integrally formed to cover the sensing region and the non-sensing region of the sensing chip and the holding substrate. The protection layer has an exposed upper surface, which has one portion serving as a sensing surface in contact with the object. The entire protection layer is composed of the same material. | 11-19-2009 |
20090294880 | Method for manufacturing a sensor element, and sensor element - A method for manufacturing a capped sensor element by providing a substrate with a sensor structure, the sensor structure being produced in the substrate using a sacrificial material, applying a cap made of zeolite to the sensor structure and the sacrificial material, and removing the sacrificial material, the sacrificial material being removed through the cap made of zeolite. A sensor element having capping is also provided. | 12-03-2009 |
20090309175 | Electromechanical system having a controlled atmosphere, and method of fabricating same - There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of fabricating or manufacturing MEMS having mechanical structures that operate in controlled or predetermined mechanical damping environments. In this regard, the present invention encapsulates the mechanical structures within a chamber, prior to final packaging and/or completion of the MEMS. The environment within the chamber containing and/or housing the mechanical structures provides the predetermined, desired and/or selected mechanical damping. The parameters of the encapsulated fluid (for example, the gas pressure) in which the mechanical structures are to operate are controlled, selected and/or designed to provide a desired and/or predetermined operating environment. | 12-17-2009 |
20090321858 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING AND INSPECTION THEREOF - An accelerator sensor includes a semiconductor substrate having a main front surface and a main rear surface, a first groove portion being formed along a front surface pattern, in the main front surface, a second groove portion being formed along a rear surface pattern, in the main rear surface, a through-hole being formed because of connection between at least parts of the first groove portion and the second groove portion and at least one groove width variation portion being formed in at least one of inner walls of the first groove portion. An offset of the rear surface pattern to the front surface pattern can be inspected easily by existence of the groove width variation portion. | 12-31-2009 |
20100032776 | DESTRUCTOR INTEGRATED CIRCUIT CHIP, INTERPOSER ELECTRONIC DEVICE AND METHODS - A semiconductor chip includes a first integrated circuit chip and a depression substrate attached to the integrated circuit chip, wherein the integrated circuit chip and the depression substrate define a cavity therebetween. The semiconductor chip also includes a stress sensitive material located in the cavity and a chemical located in the cavity, wherein detection of tampering causes a reaction by the chemical such that the semiconductor chip is at least partially destroyed. | 02-11-2010 |
20100059835 | Apparatus and Method of Wafer Bonding Using Compatible Alloy - A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors. | 03-11-2010 |
20100065933 | Semiconductor strain gauge and the manufacturing method - A high-density impurity diffused layer of an identical conduction type to the semiconductor substrate on which the impurity is doped higher in density than the semiconductor substrate around the diffuse resistance region is provided, one side of the electrodes is formed extending to the high-density impurity diffused layer and the diffused resistance region and the high-density impurity diffused layer are connected in a semiconductor strain gauge that is formed on the surface of the semiconductor substrate of a fixed conduction type and is provided with the diffused resistance region of opposite conduction type to the semiconductor substrate and is provided with electrodes on both ends of the diffused resistance region. | 03-18-2010 |
20100072565 | Soft Mems - A microscale polymer-based apparatus comprises a substrate formed from a first polymer material and at least one active region integrated with the substrate. The at least one active region is patterned from a second polymer material that is modified to perform at least one function within the at least one active region. | 03-25-2010 |
20100109101 | Method of Positioning Catalyst Nanoparticle and Nanowire-Based Device Employing Same - A method of positioning a catalyst nanoparticle that facilitates nanowire growth for nanowire-based device fabrication employs a structure having a vertical sidewall formed on a substrate. The methods include forming the structure, forming a targeted region in a surface of either the structure or the substrate, and forming a catalyst nanoparticle in the targeted region using one of a variety of techniques. The techniques control the position of the catalyst nanoparticle for subsequent nanowire growth. A resonant sensor system includes a nanowire-based resonant sensor and means for accessing the nanowire. The sensor includes an electrode and a nanowire resonator. The electrode is electrically isolated from the substrate. One or more of the substrate is electrically conductive, the nanowire resonator is electrically conductive, and the sensor further comprises another electrode. The nanowire resonator responds to an environmental change by displaying a change in oscillatory behavior. | 05-06-2010 |
20100109102 | Method and structure for forming a gyroscope and accelerometer - A method for fabricating a micro electromechanical device includes providing a first substrate including control circuitry. The first substrate has a top surface and a bottom surface. The method also includes forming an insulating layer on the top surface of the first substrate, removing a first portion of the insulating layer so as to form a plurality of standoff structures, and bonding a second substrate to the first substrate. The method further includes thinning the second substrate to a predetermined thickness and forming a plurality of trenches in the second substrate. Each of the plurality of trenches extends to the top surface of the first substrate. Moreover, the method includes filling at least a portion of each of the plurality of trenches with a conductive material, forming the micro electromechanical device in the second substrate, and bonding a third substrate to the second substrate. | 05-06-2010 |
20100133630 | METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT HAVING A TRENCH STRUCTURE FOR BACKSIDE CONTACT - A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described. | 06-03-2010 |
20100133631 | DIFFERENTIAL-PRESSURE SENSOR SYSTEM AND CORRESPONDING PRODUCTION METHOD - A differential-pressure sensor system and a corresponding production method. The differential-pressure sensor system includes: a differential-pressure sensor chip having a first pressure application region for applying a first pressure, as pressure to be detected, to the differential-pressure sensor chip, and a second pressure application region for applying a second pressure, as reference pressure, to the differential-pressure sensor chip; a housing that partially surrounds the differential-pressure sensor chip; the housing having a through hole, through which the first pressure application region is exposed to the outside; and the housing having an input opening, through which the second pressure application region is exposed to the outside. | 06-03-2010 |
20100155865 | Semiconductor device and method of making the same - A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer. | 06-24-2010 |
20100171189 | ELECTRONIC DEVICE PACKAGE AND FABRICATION METHOD THEREOF - The invention provides an electronic device package and fabrication method thereof. The electronic device package includes a sensor chip. An upper surface of the sensor chip comprises a sensing film. A covering plate having an opening structure covers the upper surface of the sensor chip. A cavity is between the covering plate and the sensor chip, corresponding to a position of the sensing film, where the cavity communicates with the opening structure. A spacer is between the covering plate and the sensor chip, surrounding the cavity. A pressure releasing region is between the spacer and the sensing film. | 07-08-2010 |
20100176468 | Microelectromechanical Apparatus and Method for Producing the Same - A microelectromechanical apparatus (X) includes a microelectromechanical component ( | 07-15-2010 |
20100193887 | Stress-Distribution Detecting Semiconductor Package Group And Detection Method Of Stress Distribution In Semiconductor Package Using The Same - A disclosed stress-distribution detecting semiconductor package group includes multiple stress-distribution detecting semiconductor packages each formed by resin-encapsulating a stress detecting semiconductor chip of the same size using an identical resin encapsulation structure. Each stress detecting semiconductor chip includes a piezoelectric element for stress detection and at least two electrode pads electrically connected to the piezoelectric element to measure an electrical property of the piezoelectric element. The piezoelectric elements of the stress detecting semiconductor chips are respectively disposed on the corresponding stress detecting semiconductor chips to be located at different positions from one another when superimposed on a single imaginary semiconductor chip plane having the same plane size as that of the stress detecting semiconductor chips. | 08-05-2010 |
20100213557 | MICRO-ELECTRO-MECHANICAL-SYSTEM SENSOR AND METHOD FOR MAKING SAME - The present invention discloses an MEMS sensor and a method for making the MEMS sensor. The MEMS sensor according to the present invention comprises: a substrate including an opening; a suspended structure located above the opening; and an upper structure, a portion of which is at least partially separated from a portion of the suspended structure; wherein the suspended structure and the upper structure are separated from each other by a step including metal etch. | 08-26-2010 |
20100230767 | MEMS SENSOR, MEMS SENSOR MANUFACTURING METHOD, AND ELECTRONIC DEVICE - An MEMS sensor includes: a movable weight which is connected with a fixed frame via an elastic deformation portion and has a cavity portion around the movable weight, wherein the movable weight has a laminated layer structure including a plurality of conductive layers, a plurality of between-layers insulation layers each of which is disposed between the adjoining conductive layers of the plural conductive layers, and plugs which are inserted into predetermined embedding groove patterns penetrating through the respective layers of the plural between-layers insulation layers and have specific gravity larger than that of the between-layers insulation layers, and the plugs formed on the respective layers have wall portions in wall shapes extending in one or plural longitudinal directions. | 09-16-2010 |
20100270632 | Resonator and Methods of Making Resonators - A resonator and method of making a resonator are provided. A particular method includes etching a silicon substrate to form a resonator structure. The resonator structure includes at least one resonator beam. The method also includes converting at least a portion of the at least one resonator beam to dry oxide. | 10-28-2010 |
20100301431 | THIN SEMICONDUCTOR DEVICE HAVING EMBEDDED DIE SUPPORT AND METHODS OF MAKING THE SAME - Ultra-thin semiconductor devices, including piezoresistive sensing elements can be formed in a wafer stack that facilitates handling many thin device dice at a wafer level. Three embodiments are provided to form the thin dice in a wafer stack using three different fabrication techniques that include anodic bonding, adhesive bonding and fusion bonding. A trench is etched around each thin die to separate the thin die from others in the wafer stack. A tether layer, also known as a tether, is used to hold thin dice or dice in a wafer stack. Such as wafer stack holds many thin dice together at a wafer level for handling and enables easier die picking in packaging processes. | 12-02-2010 |
20100301432 | Gap control for die or layer bonding using intermediate layers - A structure having a gap provided between a portion of two layers that are joined together is disclosed. The structure includes a first layer having an element formed within a first surface and a second layer having a second surface, adjacent to and in direct contact with at least a portion of the first surface on all sides of the element such that the element is completely enclosed. A recess of predetermined depth is arranged to provide the gap between the element and the second surface, and a groove formed in one of the first surface or second surface, the groove defining a boundary around the element. Sealing material is deformedly retained completely within the groove to form a seal around the element, such that the recess defines the gap. | 12-02-2010 |
20110006383 | THREE-DIMENSIONAL STRUCTURE AND ITS MANUFACTURING METHOD - A plurality of three-dimensional structure configuring devices, each including an elastic body in which micro three-dimensional structure elements fixed to a substrate member are placed so as to be covered therewith and which is fixed to the substrate member, are placed within a film-like elastic body with the substrate members thereof spaced apart from one another so as to configure a three-dimensional structure. Thereby, the plurality of three-dimensional structure configuring devices can be placed with desired intervals of arrangement and in desired positions within the film-like elastic body and so that various specifications can be addressed. | 01-13-2011 |
20110012213 | VERTICAL SENSOR ASSEMBLY METHOD - A method to vertically bond a chip to a substrate is provided. The method includes forming a metal bar having a linear aspect on the substrate, forming a solder paste layer over the metal bar to form a solder bar, forming a plurality of metal pads on the substrate, and forming a solder paste layer over the plurality of metal pads to form a plurality of solder pads on the substrate. Each of the plurality of solder pads is offset from a long edge the solder bar by an offset-spacing. The chip to be vertically bonded to the substrate has a vertical-chip thickness fractionally less than the offset-spacing. The chip to be vertically bonded fits between the plurality of solder pads and the solder bar. The solder bar enables alignment of the chip to be vertically bonded. | 01-20-2011 |
20110018077 | SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURING METHOD - A semiconductor pressure sensor includes a single crystal silicon substrate, a diaphragm, four diaphragm side walls enclosing the diaphragm, and a bridge circuit. The diaphragm is formed in the silicon substrate by etching the silicon substrate from a lower surface side of the silicon substrate. The diaphragm has a (110) plane orientation and a substantially parallelogram shape. The four diaphragm side walls have a (111) plane orientation and form two pairs of substantially parallel and opposite surfaces. The bridge circuit is formed on an upper surface of the silicon substrate. The bridge circuit includes a lead conductor and a strain gauge resistor. The bridge circuit is configured to detect pressure applied to the pressure sensor based on a change in an output value of the bridge circuit corresponding to an amount of flexure produced in the diaphragm by the pressure. | 01-27-2011 |
20110018078 | Manufacturing method for a micromechanical component having a thin-layer capping - A manufacturing method for a micromechanical component having a thin-layer capping. The method includes the following: forming a functional layer on a substrate; structuring the functional layer in first cutout regions having a first width and in regions of the functional layer to be removed having a second width, the second width being substantially greater than the first width; forming a first oxide layer on the structured functional layer; forming a first sealing layer on the thermally oxidized and structured functional layer, the first cutout regions having the first width being sealed; forming a cap layer on the first sealing layer; forming first through holes which extend through the cap layer, the first sealing layer, and the first oxide layer for at least partially exposing the regions of the functional layer to be removed; and selectively removing the regions of the functional layer to be removed, by introducing a first etching medium through the first through holes, resulting in second cutout regions in the functional layer which have the second width. | 01-27-2011 |
20110031565 | MICROMACHINED DEVICES AND FABRICATING THE SAME - Micromachined devices and methods for making the devices. The device includes: a first wafer having at least one via; and a second wafer having a micro-electromechanical-systems (MEMS) layer. The first wafer is bonded to the second wafer. The via forms a closed loop when viewed in a direction normal to the top surface of the first wafer to thereby define an island electrically isolated. The method for fabricating the device includes: providing a first wafer having at least one via; bonding a second wafer having a substantially uniform thickness to the first wafer; and etching the bonded second wafer to form a micro-electromechanical-systems (MEMS) layer. | 02-10-2011 |
20110049651 | THREE-DIMENSIONAL MEMS STRUCTURE AND METHOD OF MANUFACTURING THE SAME - Provided are a three-dimensional (3D) MEMS structure and a method of manufacturing the same. The method of manufacturing the 3D MEMS structure having a floating structure includes depositing a first etch mask on a substrate, etching at least two regions of the first etch mask to expose the substrate, and forming at least one step in the etched region, partially etching the exposed region of the substrate using the first etch mask, and forming at least two grooves, depositing a second etch mask on a sidewall of the groove, and performing an etching process to connect lower regions of the at least two grooves to each other, and forming at least one floating structure. | 03-03-2011 |
20110049652 | METHOD AND SYSTEM FOR MEMS DEVICES - A micro electro-mechanical (MEMS) device assembly is provided. The MEMS device assembly includes a first substrate that has a plurality of electronic devices, a plurality of first bonding regions, and a plurality of second bonding regions. The MEMS device assembly also includes a second substrate that is bonded to the first substrate at the plurality of first bonding regions. A third substrate having a recessed region and a plurality of standoff structures is disposed over the second substrate and bonded to the first substrate at the plurality of second bonding regions. The plurality of first bonding regions provide a conductive path between the first substrate and the second substrate and the plurality of the second bonding regions provide a conductive path between the first substrate and the third substrate. | 03-03-2011 |
20110049653 | MEMS SENSOR, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING MEMS SENSOR - An MEMS sensor includes: a fixation frame section; a movable weight section coupled to the fixation frame section via an elastically deformable section; a fixed electrode section extending from the fixation frame section toward the movable weight section; a movable electrode section extending from the movable weight section toward the fixation frame section, and disposed so as to be opposed to the fixed electrode section via a gap; a capacitance section composed mainly of the fixed electrode section and the movable electrode section; and an active element provided to the movable weight section. | 03-03-2011 |
20110089505 | METHOD FOR MANUFACTURING A SENSOR COMPONENT WITHOUT PASSIVATION, AND A SENSOR COMPONENT - A sensor component and a method for manufacturing a sensor component, in which a sealing passivation of a sensor layer may be dispensed with. For this purpose, the sensor component includes, in particular, a thin film high-pressure sensor, a deformation body and a piezoresistive sensor layer, which is applied to the deformation body, the piezoresistive sensor layer including at least one metal as well as carbon and/or hydrocarbon and terminating the layer structure of the sensor component. Based on the materials used a sealing cover of the sensor layer by a thin film passivation layer may be dispensed with. Additional contact layers for contacting the sensor layer may advantageously also be dispensed with. Contacting may then take place directly on the sensor layer, using a bond wire. | 04-21-2011 |
20110089506 | INTRUSION PROTECTION USING STRESS CHANGES - The invention relates to a integrated circuit comprising an electronic circuit integrated on a substrate ( | 04-21-2011 |
20110101475 | CMOS INTEGRATED MICROMECHANICAL RESONATORS AND METHODS FOR FABRICATING THE SAME - The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. | 05-05-2011 |
20110108935 | SILICON TAB EDGE MOUNT FOR A WAFER LEVEL PACKAGE - A Micro-ElectroMechanical Systems (MEMS) device having electrical connections (a metallization pattern) available at an edge of the MEMS die. The metallization pattern on the edge of the die allows the die to be mounted on edge with no further packaging, if desired. | 05-12-2011 |
20110121415 | PLANAR MICROSHELLS FOR VACUUM ENCAPSULATED DEVICES AND DAMASCENE METHOD OF MANUFACTURE - Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell. | 05-26-2011 |
20110121416 | PLANAR MICROSHELLS FOR VACUUM ENCAPSULATED DEVICES AND DAMASCENE METHOD OF MANUFACTURE - Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell. | 05-26-2011 |
20110169108 | Hot-Melt Sealing Glass Compositions And Methods Of Making And Using The Same - Hot-melt sealing glass compositions that include one or more glass frits dispersed in a polymeric binder system. The polymeric binder system is a solid at room temperature, but melts at a temperature of from about 35° C. to about 90° C., thereby forming a flowable liquid dispersion that can be applied to a substrate (e.g., a cap wafer and/or a device wafer of a MEMS device) by screen printing. Hot-melt sealing glass compositions according to the invention rapidly re-solidify and adhere to the substrate after being deposited by screen printing. Thus, they do not tend to spread out as much as conventional solvent-based glass frit bonding pastes after screen printing. And, because hot-melt sealing glass compositions according to the invention are not solvent-based systems, they do not need to be force dried after deposition. | 07-14-2011 |
20110175178 | MICROSCOPIC STRUCTURE PACKAGING METHOD AND DEVICE WITH PACKAGED MICROSCOPIC STRUCTURE - A method of packaging a micro electro-mechanical structure comprises forming said structure on a substrate; depositing a sacrificial layer over said structure; patterning the sacrificial layer; depositing a SIPOS (semi-insulating polycrystalline silicon) layer over the patterned sacrificial layer; treating the SIPOS layer with an etchant to convert the SIPOS layer into a porous SIPOS layer, removing the patterned sacrificial layer through the porous layer SIPOS to form a cavity including said structure; and sealing the porous SIPOS layer. A device including such a packaged micro electro-mechanical structure is also disclosed. | 07-21-2011 |
20110193184 | Micromechanical system and method for manufacturing a micromechanical system - A micromechanical system having at least one micromechanical device, in particular a sensor device and/or an actuator device, the micromechanical system having a substrate on which at least one micromechanical device is provided, the micromechanical device having at least one structured or unstructured film adhesive on at least one side. | 08-11-2011 |
20110215431 | ELECTRICAL CONTACT CONFIGURATION OF MICRO-ELECTROMECHANICAL COMPONENT AND FABRICATION METHOD - A micro-electromechanical component produced from a semiconductor substrate, comprising an internal moving portion which includes conductive elements and contacts on its outer surface, said contacts being electrically connected to said conductive elements, said electrical contacts being capable of accommodating soldered interconnect wires which are themselves designed to be connected to electrical contacts provided on device which accommodates said component, characterized in that electrical contacts are arranged in an area which extends between upper face of the component and lateral face, said contacts having a concave shape and having two regions capable of accommodating soldered interconnect wires, said regions being substantially perpendicular to each other and parallel to said upper face and said lateral face respectively. | 09-08-2011 |
20110221014 | PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE PRESSURE SENSOR - A pressure sensor of the present invention includes a substrate inside which a reference pressure chamber is formed, a closing body filled in a through-hole formed in the substrate such that the closing body penetrates through a portion between the surface of the substrate and the reference pressure chamber, and hermetically closes the reference pressure chamber, and a strain gauge provided inside the substrate between the surface of the substrate and the reference pressure chamber, and the electric resistance thereof being capable of changing by strain deformation of the substrate. | 09-15-2011 |
20110227178 | SEMICONDUCTOR STRAIN SENSOR - A semiconductor strain sensor having a strain sensor chip composed of a semiconductor substrate having a piezoresistive element as a strain detection section. The semiconductor strain sensor has a stable characteristic for a long period of time and a stable conversion factor of a strain generated in the strain sensor chip corresponding to a strain of an object to be measured, within a strain range of a size to be measured. The strain sensor chip is bonded to a metal base plate with a metal bonding material. The metal base plate has two or four extending members, which protrude from a side of the strain sensor chip for attaching the strain senor chip to the object to be measured. Preferably, a groove is arranged between a metal base plate undersurface area, which corresponds to the bonding area where the strain sensor chip is bonded to the metal base plate, and the undersurfaces of the extending members, and a protruding section sandwiched by the grooves is arranged on the undersurface of the metal base plate. | 09-22-2011 |
20110233693 | ELECTROMECHANICAL TRANSDUCER DEVICE AND METHOD OF FORMING A ELECTROMECHANICAL TRANSDUCER DEVICE - A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state. | 09-29-2011 |
20110278685 | SEMICONDUCTOR PRESSURE SENSOR - A semiconductor pressure sensor that can improve diaphragm breakage pressure tolerance is provided. | 11-17-2011 |
20110291208 | ELEMENT STRUCTURE, INERTIA SENSOR, AND ELECTRONIC DEVICE - Manufacturing of an element structure including a capacitor is to be facilitated. An element structure includes a first substrate that has a first support layer and a first movable beam having one end supported side the first support layer and the other end having a void part provided therearound and a second substrate that has a second support layer and a first fixing electrode formed side the second support layer wherein the second substrate is disposed to face above the first substrate, the first movable beam is provided with a first movable electrode and the first fixing electrode and the first movable electrode are disposed to face each other, with a gap therebetween. | 12-01-2011 |
20120012951 | PACKAGE FOR VACUUM ENCAPSULATION OF AN ASSOCIATED MICROELECTROMECHANICAL SYSTEM, AND A METHOD FOR DETECTING A PROBLEM WITH A SOLDER JOINT IN SUCH AN ASSEMBLY - Package (BT) for vacuum encapsulation of a microelectromechanical system (MEMS) provided with an electrically conductive element intended to be soldered to said package (BT), said package (BT) comprising a metallized base (FM), designed to be soldered to said microelectromechanical system (MEMS), and output electrical contacts (CES), electrically connected to electrical-contact elements of said microelectromechanical system. Said metallized base (FM) comprises a plurality of metallized surface portions (PSM), respectively bounded by an unmetallized solder stop region, and respectively connected to the rest of the metallized base (FM) by a metallized track (PTEM), having a small width relative to the corresponding width of said portion (PSM), said metallized surface portions (PSM) being designed to be soldered to said microelectromechanical system (MEMS). | 01-19-2012 |
20120032286 | THREE DIMENSIONAL FOLDED MEMS TECHNOLOGY FOR MULTI-AXIS SENSOR SYSTEMS - An apparatus is fabricated with a plurality of semiconductor-device substrates and/or MEMS substrates with micromachined sensors, circuits, transducers, and/or MEMS devices fabricated on the plurality of substrates. A plurality of flexible hinges couple the plurality of substrates into a substantially flat two dimensional foldable assembly. Electrical interconnects coupled to the sensors, circuits, transducers, and/or MEMS devices extend other ones of the plurality of substrates. The foldable assembly of substrates is assembled or folded into a three dimensional polyhedral structure with the plurality of substrates configured in three dimensions to form defined relative orientations in space with respect to each other. The invention includes a wafer scale method of fabricating the apparatus. | 02-09-2012 |
20120080764 | APPARATUS AND METHOD FOR MICROELECTROMECHANICAL SYSTEMS DEVICE PACKAGING - A MEMS package includes a substrate having an L-shaped cross-section. The substrate includes a vertical portion having a front surface and a back surface, and a horizontal portion protruding from a lower part of the front surface of the vertical portion, wherein the front surface of the vertical portion includes a mounting region. A MEMS die is mounted on the mounting region such that the MEMS die is oriented substantially parallel to the front surface; a lid attached to the front surface of the substrate while covering the MEMS die; and a plurality of leads formed on a bottom surface of the substrate. The leads can extend substantially parallel to one another, and substantially perpendicular to the front surface. The MEMS die can be oriented substantially perpendicular to a PCB substrate on which the package is mounted. | 04-05-2012 |
20120104520 | MEMS SENSOR - An MEMS sensor includes: a functional layer having a sensor section; a wiring substrate disposed facing the functional layer and having a conduction pathway for the sensor section; a first metal layer provided on the surface of the sensor section which faces the wiring substrate; and a second metal layer provided on the surface of the wiring substrate which faces the sensor section, wherein the first and second metal layers are joined to each other, a space is formed between a movable portion of the sensor section and the wiring substrate, and a stopper which is composed of a third metal layer being the same film as the first metal layer formed on the functional layer side and a contact portion formed on the wiring substrate side which come into contact with each other is formed between the functional layer and the wiring substrate. | 05-03-2012 |
20120112294 | IC MANUFACTURING METHOD, IC AND APPARATUS - A method of manufacturing an integrated circuit having a substrate comprising a plurality of components and a metallization stack over the components, the metallization stack comprising a first sensing element and a second sensing element adjacent to the first sensing element. | 05-10-2012 |
20120126348 | SYSTEMS AND METHODS FOR A FOUR-LAYER CHIP-SCALE MEMS DEVICE - Systems and methods for a micro-electromechanical system (MEMS) apparatus are provided. In one embodiment, a system comprises a first double chip that includes a first base layer; a first device layer bonded to the first base layer, the first device layer comprising a first set of MEMS devices; and a first top layer bonded to the first device layer, wherein the first set of MEMS devices is hermetically isolated. The system also comprises a second double chip that includes a second base layer; a second device layer bonded to the second base layer, the second device layer comprising a second set of MEMS devices; and a second top layer bonded to the second device layer, wherein the second set of MEMS devices is hermetically isolated, wherein a first top surface of the first top layer is bonded to a second top surface of the second top layer. | 05-24-2012 |
20120126349 | SYSTEMS AND METHODS FOR A THREE-LAYER CHIP-SCALE MEMS DEVICE - Systems and methods for a micro-electromechanical system (MEMS) device are provided. In one embodiment, a system comprises a first outer layer and a first device layer comprising a first set of MEMS devices, wherein the first device layer is bonded to the first outer layer. The system also comprises a second outer layer and a second device layer comprising a second set of MEMS devices, wherein the second device layer is bonded to the second outer layer. Further, the system comprises a central layer having a first side and a second side opposite that of the first side, wherein the first side is bonded to the first device layer and the second side is bonded to the second device layer. | 05-24-2012 |
20120126350 | BATCH FABRICATED 3D INTERCONNECT - In an example, a method of fabricating one or more vertical interconnects is provided. The method includes patterning and stacking a plurality of wafers to form a wafer stack. A plurality of apertures can be formed in the wafer stack within one or more saw streets of the wafer stack, and conductive material can be deposited on sidewalls of the plurality of apertures. The wafer stack can be diced along the one or more saw streets and through the plurality of apertures such that the conductive material on the sidewalls is exposed on an edge portion of resulting stacked dies | 05-24-2012 |
20120139067 | PRESSURE SENSOR AND METHOD OF PACKAGING SAME - A method of packaging a pressure sensor die that does not use pre-molded lead frames. Instead a lead frame array is attached to a tape and a non-conductive material is deposited on the lead frames. The non-conductive material is cured and the tape is removed. Pressure sensor dies then are attached to respective die pads of the lead frames and electrically connected to lead frame leads with bond wires. A gel is dispensed onto a top surface of the pressure sensor dies and then a lid is attached to each of the lead frames to cover the pressure sensor dies. The lead frames are singulated to form individual pressure sensor packages. | 06-07-2012 |
20120139068 | Multi-chip Package - A method for forming a stacked integrated circuit package of primary dies on a carrier die, includes forming electrically conductive pillars at connection pads defined on an active face of a carrier wafer incorporating carrier integrated circuits, the electrically conductive pillars providing electrical connections to said carrier integrated circuits; attaching primary dies to the active face of the carrier wafer, each supporting electrically conductive pillars at connection pads defined on an active face of the primary die; encapsulating the active face of the carrier wafer and the primary dies attached thereto in an insulating material; producing a wafer package by removing a thickness of the insulating layer sufficient to expose the electrically conductive pillars; and singulating the carrier wafer to form stacked integrated circuit packages, each package comprising at least one primary die on a carrier die. | 06-07-2012 |
20120153410 | SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE HAVING THE SAME - A semiconductor chip includes a semiconductor chip body having a first surface and a second surface that faces away from the first surface, and including a plurality of bonding pads disposed on the first surface. Also, the semiconductor chip includes a distance maintaining member attached to the first surface of the semiconductor chip body and electrically connected with a circuit pattern. | 06-21-2012 |
20120187509 | Contact Arrangement For Establishing A Spaced, Electrically Conducting Connection Between Microstructured Components - A contact arrangement for establishing a spaced, electrically conducting connection between a first wafer and a second wafer includes an electrical connection contact, a passivation layer on the electrical connection contact, and a dielectric spacer layer arranged on the passivation layer, wherein the contact arrangement is arranged at least on one of the first wafer and the second wafer, wherein the contact arrangement comprises trenches at least partly filled with a first material capable of forming a metal-metal connection, wherein the trenches are continuous trenches from the dielectric spacer layer through the passivation layer as far as the electrical connection contact, and wherein the first material is arranged in the trenches from the electrical connection contact as far as the upper edge of the trenches. | 07-26-2012 |
20120205756 | SEMICONDUCTOR DEVICE AND METHOD OF TESTING THE SAME - A semiconductor device includes a semiconductor chip with a gate electrode, and a stress detecting element placed on a surface of the semiconductor chip, and which detects stress applied to the surface. The semiconductor device controls a control signal to be applied to the gate electrode in response to stress detected by the stress detecting element. The stress detecting element is preferably provided as a first stress detecting element which detects stress applied to a central portion of the semiconductor chip in plan view. The stress detecting element is preferably provided as a second stress detecting element which detects stress applied to a circumferential portion of the semiconductor chip in plan view. | 08-16-2012 |
20120228727 | METHOD AND STRUCTURE FOR FORMING A GYROSCOPE AND ACCELEROMETER - A method for fabricating a micro electromechanical device includes providing a first substrate including control circuitry. The first substrate has a top surface and a bottom surface. The method also includes forming an insulating layer on the top surface of the first substrate, removing a first portion of the insulating layer so as to form a plurality of standoff structures, and bonding a second substrate to the first substrate. The method further includes thinning the second substrate to a predetermined thickness and forming a plurality of trenches in the second substrate. Each of the plurality of trenches extends to the top surface of the first substrate. Moreover, the method includes filling at least a portion of each of the plurality of trenches with a conductive material, forming the micro electromechanical device in the second substrate, and bonding a third substrate to the second substrate. | 09-13-2012 |
20120248555 | MEMS sensing device and method for making same - The present invention discloses a MEMS sensing device which comprises a substrate, a MEMS device region, a film, an adhesive layer, a cover, at least one opening, and a plurality of leads. The substrate has a first surface and a second surface opposite the first surface. The MEMS device region is on the first surface, and includes a chamber. The film is overlaid on the MEMS device region to seal the chamber as a sealed space. The cover is mounted on the MEMS device region and adhered by the adhesive layer. The opening is on the cover or the adhesive layer, allowing the pressure of the air outside the device to pressure the film. The leads are electrically connected to the MEMS device region, and extend to the second surface. | 10-04-2012 |
20120306032 | METHOD OF BONDING SEMICONDUCTOR SUBSTRATE AND MEMS DEVICE - Disclosed is a method for bonding semiconductor substrates, wherein an eutectic alloy does run off the bonding surfaces during the eutectic bonding. Also disclosed is an MEMS device which is obtained by bonding semiconductor substrates by this method. Specifically, a substrate ( | 12-06-2012 |
20130001711 | MANUFACTURING METHOD FOR A MICROMECHANICAL COMPONENT, CORRESPONDING COMPOSITE COMPONENT, AND CORRESPONDING MICROMECHANICAL COMPONENT - A micromechanical component including a first composite of a plurality of semiconductor chips, the first composite having a first front and back surfaces, a second composite of a corresponding plurality of carrier substrates, the second composite having a second front and back surfaces; wherein the first front surface and the second front surface are connected via a structured adhesion promoter layer in such a way that each semiconductor chip is connected, essentially free of cavities, to a corresponding carrier substrate corresponding to a respective micromechanical component. | 01-03-2013 |
20130001712 | ACCELERATION SENSOR - A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element. | 01-03-2013 |
20130043548 | METHOD FOR MANUFACTURING A MICROMECHANICAL STRUCTURE, AND MICROMECHANICAL STRUCTURE - A method for manufacturing a micromechanical structure includes: forming a first insulation layer above a substrate; forming a first micromechanical functional layer on the first insulation layer; forming multiple first trenches in the first micromechanical functional layer, which trenches extend as far as the first insulation layer; forming a second insulation layer on the first micromechanical functional layer, which second insulation layer fills up the first trenches; forming etch accesses in the second insulation layer, which etch accesses locally expose the first micromechanical functional layer; and etching the first micromechanical functional layer through the etch accesses, the filled first trenches and the first insulation layer acting as an etch stop. | 02-21-2013 |
20130062712 | Hot-Melt Sealing Glass Compositions And Devices Using The Same - Hot-melt sealing glass compositions that include one or more glass frits dispersed in a polymeric binder system. The polymeric binder system is a solid at room temperature, but melts at a temperature of from about 35° C. to about 90° C., thereby forming a flowable liquid dispersion that can be applied to a substrate (e.g., a cap wafer and/or a device wafer of a MEMS device) by screen printing. Hot-melt sealing glass compositions according to the invention rapidly re-solidify and adhere to the substrate after being deposited by screen printing. Thus, they do not tend to spread out as much as conventional solvent-based glass frit bonding pastes after screen printing. And, because hot-melt sealing glass compositions according to the invention are not solvent-based systems, they do not need to be force dried after deposition. | 03-14-2013 |
20130069181 | ENCAPSULATION STRUCTURE FOR SILICON PRESSURE SENSOR - An encapsulation structure for silicon pressure sensor including a case and a stem is proposed. The case and the stem are connected with a cavity therebetween. A sealing pad and a pressure sensitive silicon chip are provided in the said cavity. The sealing pad is placed under the silicon chip and the silicon chip is connected to the external circuit through the bonding pad. This invention, with the anti-overloading ability, simplifies the encapsulation structure and manufacturing process which greatly reduces the cost of material and process. | 03-21-2013 |
20130087863 | DIFFERENTIAL PRESSURE SENSOR DEVICE - A MEMS differential pressure sensing element is provided by two separate silicon dies attached to opposite sides of a silicon or glass spacer. The spacer is hollow. If the spacer is silicon, the dies are preferably attached to the hollow spacer using silicon-to-silicon bonding provided in part by silicon oxide layers. If the spacer is glass, the dies can be attached to the hollow spacer using anodic bonding. Conductive vias extend through the layers and provide electrical connections between Wheatstone bridge circuits formed from piezoresistors in the silicon dies. | 04-11-2013 |
20130093031 | SYSTEMS AND METHODS FOR AIR-RELEASE IN CAVITY PACKAGES - A housing for integrated devices that includes an air-release mechanism is disclosed. This is achieved, in various embodiments, by forming a vent hole in a package substrate, and arranging a package lid over the package substrate. The vent hole allows air to be released from within the cavity package, thereby ensuring that the package lid remains stably affixed to the package substrate despite increased temperatures during processing. The vent hole may be sealed upon mounting the package onto a mounting substrate. | 04-18-2013 |
20130113056 | DYNAMIC QUANTITY SENSOR - The present invention provides a dynamic quantity device which reduces stress received by a sensor due to resin packaging and reduces variation in sensor characteristics due to stress. The dynamic quantity sensor includes a semiconductor substrate including a fixing part and a flexible part and a movable part positioned on an interior side of the fixing part, and a cap component configured to cover the flexible part and the movable part, wherein the fixing part includes an interior frame configured to enclose the flexible part and the movable part and an exterior part positioned on a periphery of the interior frame, a slit configured to divide the interior frame and the exterior frame, and a linking part configured to link the interior frame and the exterior frame. | 05-09-2013 |
20130113057 | FORCE SENSING SHEET - A force sensing array includes multiple layers of material that are arranged to define an elastically stretchable sensing sheet. The sensing sheet may be placed underneath a patient to detect interface forces or pressures between the patient and the support structure that the patient is positioned on. The force sensing array includes a plurality of force sensors. The force sensors are defined where a row conductor and a column conductor approach each other on opposite sides of a force sensing material, such as a piezoresistive material. In order to reduce electrical cross talk between the plurality of sensors, a semiconductive material is included adjacent the force sensing material to create a PN junction with the force sensing material. This PN junction acts as a diode, limiting current flow to essentially one direction, which, in turn, reduces cross talk between the multiple sensors. | 05-09-2013 |
20130119493 | MICROELECTRO MECHANICAL SYSTEM ENCAPSULATION SCHEME - A microelectro mechanical system (MEMS) assembly includes a carrier and a MEMS device disposed over the carrier. A buffer layer is disposed over the MEMS device. The Young's modulus of the buffer layer is less than that of the MEMS device. | 05-16-2013 |
20130134530 | Method of fabricating isolated semiconductor structures - Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted. | 05-30-2013 |
20130154033 | MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES - Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes layering metal and insulator materials on a sacrificial material formed on a substrate. The method further includes masking the layered metal and insulator materials. The method further includes forming an opening in the masking which overlaps with the sacrificial material. The method further includes etching the layered metal and insulator materials in a single etching process to form the beam structure, such that edges of the layered metal and insulator material are aligned. The method further includes forming a cavity about the beam structure through a venting. | 06-20-2013 |
20130181303 | DIE ATTACH STRESS ISOLATION - A microstructure device package includes a package housing configured and adapted to house a microstructure device. A bracket is housed in the package housing. The bracket includes a bracket base with a first bracket arm and a second bracket arm each extending from the bracket base. A channel is defined between the first and second bracket arms. The first bracket aim defines a first mounting surface facing inward with respect to the channel. The second bracket aim defines a second mounting surface facing outward with respect to the channel. The second mounting surface of the bracket is mounted to the package housing. A microstructure device is mounted to the first mounting surface in the channel. The bracket is configured and adapted to isolate the microstructure device from packaging stress imparted from the package housing on the second mounting surface of the bracket. | 07-18-2013 |
20130193534 | CAPACITIVE PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME - A capacitive pressure sensor includes: a semiconductor substrate having a reference pressure chamber formed therein; a diaphragm which is formed in a front surface of the semiconductor substrate and has a ring-like peripheral through hole penetrating between the front surface of the semiconductor substrate and the reference pressure chamber and defining an upper electrode and a plurality of central through holes; a peripheral insulating layer which fills the peripheral through hole and electrically isolates the upper electrode from other portions of the semiconductor substrate; and a central insulating layer which fills the central through holes. | 08-01-2013 |
20130214368 | SEMICONDUCTOR INTEGRATED DEVICE ASSEMBLY PROCESS - A process for assembly of an integrated device, envisages: providing a first body of semiconductor material integrating at least one electronic circuit and having a top surface; providing a second body of semiconductor material integrating at least one microelectromechanical structure and having a bottom surface; and stacking the second body on the first body with the interposition, between the top surface of the first body and the bottom surface of the second body, of an elastic spacer material. Prior to the stacking step, the step is envisaged of providing, in an integrated manner, at the top surface of the first body a confinement and spacing structure that confines inside it the elastic spacer material and supports the second body at a distance from the first body during the stacking step. | 08-22-2013 |
20130221458 | SENSOR MODULE FOR ACCOMMODATING A PRESSURE SENSOR CHIP AND FOR INSTALLATION INTO A SENSOR HOUSING - In a sensor module for accommodating a pressure sensor chip and for installation into a sensor housing, a module wall is connected monolithically to the module bottom and surrounds the pressure sensor chip. Multiple connecting elements which are conducted through the module wall to the outside run straight at least in the entire outside area. Furthermore, the connecting elements are exposed on their top and bottom sides for affixing and electrically connecting at least one electrical component and for electrically integrating the sensor module into the sensor housing. In this way, a two-sided use of a sensor module having an identical external geometry and identical connectors is possible. | 08-29-2013 |
20130228881 | HIGH ASPECT RATIO CAPACITIVELY COUPLED MEMS DEVICES - A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode. | 09-05-2013 |
20130264664 | SEMICONDUCTOR PRESSURE SENSOR - A semiconductor pressure sensor includes n-type semiconductor regions, which are formed in a diaphragm of a semiconductor substrate, piezoresistive elements, which are respectively formed in the n-type semiconductor regions, and conductive shielding thin film layers, which are respectively formed on the piezoresistive elements through an insulating thin film layer, and the piezoresistive elements form a Wheatstone bridge circuit. Further, the n-type semiconductor regions and the conductive shielding thin film layers are electrically connected to each other through contacts formed in the diaphragm. | 10-10-2013 |
20130270659 | ANGULAR VELOCITY SENSOR - An angular velocity sensor for detecting an angular velocity includes a substrate having the stationary portion, two pair of driver weights, two detector weights, and a detector electrode. The angular velocity is detected by using a differential signal output indicating a variation in capacitances. When the absolute value of a de-coupling ratio (=(fanti−fin)/fanti) is greater than or equal to 0.07, the occurrence of the anti-phase mode movement can be prevented so as to prevent the occurrence of the output error of the gyro sensor and detect the angular velocity more precisely. | 10-17-2013 |
20130285175 | MICROMECHANICAL COMPONENT AND METHOD FOR MANUFACTURING A MICROMECHANICAL COMPONENT - A micromechanical component, in particular a micromechanical sensor having a carrier substrate and having a cap substrate, and a manufacturing method are provided. The carrier substrate and the cap substrate are joined together with the aid of a eutectic bond connection or by a metallic solder connection or a glass solder connection (e.g., glass frit), in an edge area of the carrier substrate and the cap substrate. The connection of the carrier substrate and the cap substrate is established with the aid of connecting areas, and a stop trench or a stop protrusion or both a stop trench and a stop protrusion are situated within the edge areas in the bordering areas. | 10-31-2013 |
20130299927 | HYBRID INTERGRATED COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF - Measures are proposed by which the design freedom is significantly increased in the case of the implementation of the micromechanical structure of the MEMS element of a component, which includes a carrier for the MEMS element and a cap for the micromechanical structure of the MEMS element, the MEMS element being mounted on the carrier via a standoff structure. The MEMS element is implemented in a layered structure, and the micromechanical structure of the MEMS element extends over at least two functional layers of this layered structure, which are separated from one another by at least one intermediate layer. | 11-14-2013 |
20130299928 | HYBRIDLY INTEGRATED COMPONENT AND METHOD FOR THE PRODUCTION THEREOF - A hybridly integrated component includes an ASIC element having a processed front side, a first MEMS element having a micromechanical structure extending over the entire thickness of the first MEMS substrate, and a first cap wafer mounted over the micromechanical structure of the first MEMS element. At least one structural element of the micromechanical structure of the first MEMS element is deflectable, and the first MEMS element is mounted on the processed front side of the ASIC element such that a gap exists between the micromechanical structure and the ASIC element. A second MEMS element is mounted on the rear side of the ASIC element. The micromechanical structure of the second MEMS element extends over the entire thickness of the second MEMS substrate and includes at least one deflectable structural element. | 11-14-2013 |
20130307095 | Composite Wafer Semiconductor - A composite wafer semiconductor device includes a first wafer and a second wafer. The first wafer has a first side and a second side, and the second side is substantially opposite the first side. The composite wafer semiconductor device also includes an isolation set is formed on the first side of the first wafer and a free space is etched in the isolation set. The second wafer is bonded to the isolation set. A floating structure, such as an inertia sensing device, is formed in the second wafer over the free space. In an embodiment, a surface mount pad is formed on the second side of the first wafer. Then, the floating structure is electrically coupled to the surface mount pad using a through silicon via (TSV) conductor. | 11-21-2013 |
20130320466 | Package for Damping Inertial Sensor - A capped micromachined accelerometer with a Q-factor of less than 2.0 is fabricated without encapsulating a high-viscosity gas with the movable mass of the micromachined accelerometer by providing small gaps between the movable mass and the substrate, and between the movable mass and the cap. The cap may be an silicon cap, and may be an ASIC smart cap. | 12-05-2013 |
20130341739 | PACKAGE STRUCTURE HAVING MICRO-ELECTRO-MECHANICAL SYSTEM ELEMENT AND METHOD OF FABRICATION THE SAME - A package structure is provided, including: a substrate having a ground pad and an MEMS element; a lid disposed on the substrate for covering the MEMS element; a wire segment electrically connected to the ground pad; an encapsulant encapsulating the lid and the wire segment; and a circuit layer formed on the encapsulant and electrically connected to the wire segment and the lid so as to commonly ground the substrate and the lid, thereby releasing accumulated electric charges on the lid so as to improve the reliability of the MEMS system and reduce the number of I/O connections. | 12-26-2013 |
20140001582 | FILM-ASSIST MOLDED GEL-FILL CAVITY PACKAGE WITH OVERFLOW RESERVOIR | 01-02-2014 |
20140001583 | METHOD TO INHIBIT METAL-TO-METAL STICTION ISSUES IN MEMS FABRICATION | 01-02-2014 |
20140035072 | HYBRID MEMS BUMP DESIGN TO PREVENT IN-PROCESS AND IN-USE STICTION - A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading. | 02-06-2014 |
20140042566 | MECHANICAL QUANTITY MEASURING DEVICE, SEMICONDUCTOR DEVICE, EXFOLIATION DETECTING DEVICE, AND MODULE - A mechanical quantity measuring device ( | 02-13-2014 |
20140103466 | RESISTANT STRAIN GAUGE - The invention relates to measurement and control of mechanical values, in particular, to control of stress conditions of various structures and manufacturing sensors of resistant strain gauge type for measuring various mechanical values. It can be used in manufacturing sensors of deformation, force, pressure, movement, vibration etc. to increase accuracy in resistant strain gauge measuring at sensitivity preservation. The resistant strain gauge for deformation and pressure measuring represents a dielectric substrate with spread strain-sensing layer in state of polycrystalline film, which contains samarium sulfide, and metal contact pads. Pads are placed on the same side of a film and output signals are soldered to them. Strain-sensing layer comprises holes which connect the pads. According to the first option, strain-sensing layer has the following composition Sm | 04-17-2014 |
20140110801 | PACKAGING FOR SEMICONDUCTOR SENSOR DEVICES AND METHODS - A pressure sensor includes a first housing having a cavity. The pressure sensor further includes a pressure sensing device attached to a bottom of the cavity. The pressure sensor further includes a layer of gel over the pressure sensing device. The pressure sensor further includes a baffle in contact with the gel to reduce movement of the gel. | 04-24-2014 |
20140117474 | PRESSURE SENSING DEVICE AND MANUFACTURING METHOD OF THE SAME - A pressure sensing device includes a sensor chip having a sensing portion, a bonding wire, a protection section, a package, and a guide member. The sensor chip detects a pressure with the sensing portion and generates a signal corresponding to the pressure. The bonding wire is electrically connected with the sensor chip in order to transmit the signal generated by the sensor chip. The protection section has an electrical insulation property and seals the sensor chip and the bonding wire. The package houses the sensor chip, the bonding wire, and the protection section. The guide member has a tubular section arranged opposed to the sensing portion. The protection section has a first thickness at an inside portion of the tubular section and has a second thickness, which is larger than the first thickness, at an outside portion of the tubular section. | 05-01-2014 |
20140239423 | MICROELECTROMECHANICAL SYSTEM DEVICES HAVING THROUGH SUBSTRATE VIAS AND METHODS FOR THE FABRICATION THEREOF - Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) devices are provided. In one embodiment, the MEMS device fabrication method forming a via opening extending through a sacrificial layer and into a substrate over which the sacrificial layer has been formed. A body of electrically-conductive material is deposited over the sacrificial layer and into the via opening to produce an unpatterned transducer layer and a filled via in ohmic contact with the unpatterned transducer layer. The unpatterned transducer layer is then patterned to define, at least in part, a primary transducer structure. At least a portion of the sacrificial layer is removed to release at least one movable component of the primary transducer structure. A backside conductor, such as a bond pad, is then produced over a bottom surface of the substrate and electrically coupled to the filled via. | 08-28-2014 |
20140264661 | MEMS Devices and Methods for Forming Same - Embodiments of the present disclosure include MEMS devices and methods for forming MEMS devices. An embodiment is a method for forming a microelectromechanical system (MEMS) device, the method including forming a MEMS wafer having a first cavity, the first cavity having a first pressure, and bonding a carrier wafer to a first side of the MEMS wafer, the bonding forming a second cavity, the second cavity having a second pressure, the second pressure being greater than the first pressure. The method further includes bonding a cap wafer to a second side of the MEMS wafer, the second side being opposite the first side, the bonding forming a third cavity, the third cavity having a third pressure, the third pressure being greater than the first pressure and less than the second pressure. | 09-18-2014 |
20140306300 | Component and Method for Producing a Component - A micromechanical component formed from, a substrate ( | 10-16-2014 |
20140312440 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of the present invention is to suppress an error in the value detected by a pressure sensor, which may be caused when environmental temperature varies. A semiconductor substrate has a first conductivity type. A semiconductor layer is formed over a first surface of the semiconductor substrate. Each of resistance parts has a second conductivity type, and is formed in the semiconductor layer. The resistance parts are spaced apart from each other. A separation region is a region of the first conductivity type formed in the semiconductor layer, and electrically separates the resistance parts from each other. A depressed portion is formed in a second surface of the semiconductor substrate, and overlaps the resistance parts, when viewed planarly. The semiconductor layer is an epitaxial layer. | 10-23-2014 |
20140319631 | MEMS Integrated Pressure Sensor Devices having Isotropic Cavities and Methods of Forming Same - A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure. | 10-30-2014 |
20140346623 | Film-Covered Open-Cavity Sensor Package - Techniques for covering open-cavity integrated-circuit packages in a batch process are disclosed. In an example method, a plurality of open-cavity packages are molded on a single batch leadframe or substrate, each open-cavity package comprising a floor and a plurality of walls arranged around the floor to form a cavity, each of said the walls having a bottom end adjoining said floor and having a top side opposite the bottom end. At least one semiconductor device is attached to the floor and within the cavity of each of the open-cavity packages, and a single flexible membrane is affixed to the top sides of the walls of the plurality of open-cavity packages, so as to substantially cover all of the cavities. The flexible membrane is then severed, between the packages. | 11-27-2014 |
20140374855 | PRESSURE SENSOR AND METHOD OF PACKAGING SAME - A method of packaging a pressure sensor die begins with patterning and etching a metal strip and forming metal traces on the strip. Further build-up is performed to transform the metal strip into a layered substrate. Cavity walls are formed on one side of the strip with a molding process and then the metal on the back side of the strip is removed. Next semiconductor dies are attached to the strip within the cavities and electrically connected to pads formed on the surface of the strip and/or to pads on other ones of the dies. A gel coating is deposited over the dies and then a metal lid is secured over the cavity. The strip is then singulated along ones of the cavity walls to form multiple sensor devices. | 12-25-2014 |
20150008543 | MEMS CAPACITIVE PRESSURE SENSORS AND FABRICATION METHOD THEREOF - A MEMS capacitive pressure sensor is provided. The MEMS capacitive pressure sensor includes a substrate having a first region and a second region, and a first dielectric layer formed on the substrate. The capacitive pressure sensor also includes a second dielectric layer having a step surface profile formed on the first dielectric layer, and a first electrode layer having a step surface profile formed on the second dielectric layer. Further, the MEMS capacitive pressure sensor includes an insulation layer formed on the first electrode layer, and a second electrode layer having a step surface profile with a portion formed on the insulation layer in the peripheral region and the rest suspended over the first electrode layer in the device region. Further, the MEMS capacitive pressure sensor also includes a chamber having a step surface profile formed between the first electrode layer and the second electrode layer. | 01-08-2015 |
20150008544 | PHYSICAL QUANTITY SENSOR - A physical quantity sensor detects a physical quantity using a piezoresistive effect and includes a first-conductivity-type well layer disposed on a first insulating layer, a plurality of second-conductivity-type piezoresistive layers disposed on a surface side of the first-conductivity-type well layer, and a second-conductivity-type isolation layer disposed between the plurality of second-conductivity-type piezoresistive layers so as to pass through the first-conductivity-type well layer from a surface of the first-conductivity-type well layer to a surface of the first insulating layer. | 01-08-2015 |
20150014799 | ELECTRONIC DEVICE, METHOD OF MANUFACTURING ELECTRONIC DEVICE, PHYSICAL QUANTITY SENSOR, ELECTRONIC APPARATUS, MOVING OBJECT - A physical quantity sensor includes a first sensor element, and an outer edge portion arranged in at least part of the outer periphery of the first sensor element, and a first groove extending in a first direction provided in the outer edge portion in a plan view of the outer edge portion. | 01-15-2015 |
20150028437 | STRAIN DECOUPLED SENSOR - A sensor comprises a substrate ( | 01-29-2015 |
20150028438 | MEMS DEVICE AND PROCESS FOR PRODUCING SAME - There are provided a process for fabricating MEMS device that includes a plurality of through-holes capable being arranged at a high density, the through-holes having a tapered end portion. Through-holes having vertical side surfaces and tapered bottoms are provided by a processing method including the steps of: disposing quadrilateral patterning having desired dimensions on a silicon substrate having a flat surface of a crystal plane, etching the substrate to a desired depth by dry etching that can realize a high aspect ratio etching, and anisotropic wet etching the dry etched substrate with a KOH aqueous solution containing isopropyl alcohol mixed thereinto. | 01-29-2015 |
20150048463 | PACKAGE DEVICE FOR MICROELECTROMECHANICAL INERTIAL SENSOR - A package device for a microelectromechanical inertial sensor comprises a ceramic substrate having an upper accommodation space and a lower accommodation and having a plurality of interconnect metal lines thereinside; a microelectromechanical system (MEMS) chip mounted inside the upper accommodation of the ceramic substrate and electrically connected with the interconnect metal lines; a top cover arranged on the ceramic substrate and sealing the upper accommodation space; and an integrated circuit (IC) chip mounted inside the lower accommodation space and electrically connected with the interconnect metal lines. The present invention can improve the reliability of components, increase the yield and decrease the fabrication cost. | 02-19-2015 |
20150054099 | PRESSURE SENSOR DEVICE AND ASSEMBLY METHOD - A semiconductor sensor device is assembled using a pre-molded lead frame having first and second die flags. The first die flag includes a cavity. A pressure sensor die (P-cell) is mounted within the cavity and a master control unit die (MCU) is mounted to the second flag. The P-cell and MCU are electrically connected to leads of the lead frame with bond wires. The die attach and wire bonding steps are each done in a single pass. A mold pin is placed over the P-cell and then the MCU is encapsulated with a mold compound. The mold pin is removed leaving a recess that is next filled with a gel material. Finally a lid is placed over the P-cell and gel material. The lid includes a hole that that exposes the gel-covered active region of the pressure sensor die to ambient atmospheric pressure outside the sensor device. | 02-26-2015 |
20150061049 | Micromechanical component for a capacitive sensor device, and manufacturing method for a micromechanical component for a capacitive sensor device - A micromechanical component for a capacitive sensor device includes first and second electrodes. The first electrode is at least partially formed from a first semiconductor layer and/or metal layer, and at least one inner side of the second electrode facing the first electrode is formed from a second semiconductor layer and/or metal layer. A cavity is between the first and second electrodes. Continuous recesses are structured into the inner side of the second electrode and sealed off with a closure layer. At least one reinforcing layer of the second electrode and at least one contact element which is electrically connected to the first electrode, to the layer of the second electrode which forms the inner side, to at least one printed conductor, and/or to a conductive substrate area, are formed from at least one epi-polysilicon layer. Also described is a micromechanical component manufacturing method for a capacitive sensor device. | 03-05-2015 |
20150069539 | Cup-Like Getter Scheme - The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by increasing an area in which a getter layer is deposited, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having one or more residual gases. A cavity is formed within a top surface of the substrate. The cavity has a bottom surface and sidewalls extending from the bottom surface to the top surface. A getter layer, which absorbs the one or more residual gases, is deposited over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls. By depositing the getter layer to extend to a location on the sidewalls of the cavity, the area of the substrate that is able to absorb the one or more residual gases is increased. | 03-12-2015 |
20150069540 | STRAIN SENSOR AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a strain sensor includes a substrate, a lid, a frame, and a sensing unit. The substrate has a first surface. The lid is provided on the first surface. The frame is provided between the substrate and the lid. The frame is nonconductive and includes a magnetic body. The sensing unit is provided inside the frame between the substrate and the lid, and includes a magnetoresistance effect element. | 03-12-2015 |
20150076630 | SIDE VENTED PRESSURE SENSOR DEVICE - A semiconductor sensor device has a pressure sensing die and at least one other die mounted on a substrate, and electrical interconnections that interconnect the pressure sensing die and the at least one other die. An active region of the pressure sensing die is covered with a pressure sensitive gel material, and a cap having a cavity is mounted over the pressure sensing die such that the pressure sensing die is positioned within the cavity. The cap has a side vent hole that exposes the gel covered active region of the pressure sensing die to ambient atmospheric pressure outside the sensor device. Molding compound on an upper surface of the substrate encapsulates the at least one other die and at least a portion of the cap. | 03-19-2015 |
20150076631 | REDUCTION OF CHIPPING DAMAGE TO MEMS STRUCTURE - A MEMS (microelectromechanical systems) structure comprises a MEMS wafer. A MEMS wafer includes a cap with cavities bonded to a structural layer through a dielectric layer disposed between the cap and the structural layer. Unique configurations of MEMS devices and methods of providing such are set forth which provide for, in part, creating rounded, scalloped or chamfered MEMS profiles by shaping the etch mask photoresist reflow, by using a multi-step deep reactive ion etch (DRIE) with different etch characteristics, or by etching after DRIE. | 03-19-2015 |
20150091108 | PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - The present disclosure provides a package structure and a manufacturing method. The package structure includes a substrate, a cover, a conductive pattern, and a sensing component. The cover is disposed on the substrate. The cover and the substrate define an accommodation space. The conductive pattern includes a conductive line. The conductive line is disposed on an internal surface of the cover exposed by the accommodation space, and is electrically connected to the substrate. The sensing component is disposed on the internal surface of the cover, and is electrically connected to the conductive line. | 04-02-2015 |
20150123221 | MICROMECHANICAL SENSOR DEVICE AND CORRESPONDING MANUFACTURING METHOD - A micromechanical sensor device and a corresponding manufacturing method are described. The micromechanical sensor device includes a CMOS wafer having a front side and a rear side, a rewiring device formed on the front side of the CMOS wafer including a plurality of stacked printed conductor levels and insulation layers, an MEMS wafer having a front side and a rear side, a micromechanical sensor device formed across the front side of the MEMS wafer, a bond connection between the MEMS wafer and the CMOS wafer, a cavern between the MEMS wafer and the CMOS wafer, in which the sensor device is hermetically enclosed, and an exposed getter layer area applied to at least one of the plurality of stacked printed conductor levels and insulation layers. | 05-07-2015 |
20150298966 | SENSOR PACKAGE HAVING STACKED DIE - A small area semiconductor device package containing two or more MEMS sensor device die and a controller die for the sensor devices is provided. The controller die is mounted on top of the largest MEMS sensor device die (e.g., a gyroscope) and over a second MEMS sensor device die (e.g., an accelerometer). In one embodiment, the controller die is also mounted on the top of the second MEMS sensor device die. In another embodiment, the controller die overhangs the second MEMS sensor device die, which is of a lesser thickness than the first MEMS sensor device die. | 10-22-2015 |
20150307344 | SENSOR APPARATUS AND METHOD FOR PRODUCING A SENSOR APPARATUS - In various embodiments, a sensor apparatus is provided. The sensor apparatus includes a sensor device having a plurality of electrical contacts; a housing having a plurality of sidewalls; and a metal carrier structure, which extends into the housing in a manner passing through two mutually opposite sidewalls from the plurality of sidewalls. The metal carrier structure is embodied in a resilient fashion at least in the direction of a sidewall through which the metal carrier structure extends. The sensor device having the plurality of electrical contacts is mounted in a resilient fashion on the metal carrier structure and is electrically conductively connected to the metal carrier structure by the plurality of contacts. | 10-29-2015 |
20150307346 | MEMS Devices and Methods for Forming Same - Embodiments of the present disclosure include MEMS devices and methods for forming MEMS devices. An embodiment is a method for forming a microelectromechanical system (MEMS) device, the method including forming a MEMS wafer having a first cavity, the first cavity having a first pressure, and bonding a carrier wafer to a first side of the MEMS wafer, the bonding forming a second cavity, the second cavity having a second pressure, the second pressure being greater than the first pressure. The method further includes bonding a cap wafer to a second side of the MEMS wafer, the second side being opposite the first side, the bonding forming a third cavity, the third cavity having a third pressure, the third pressure being greater than the first pressure and less than the second pressure. | 10-29-2015 |
20150321907 | SEQUENTIAL WAFER BONDING - Embodiments of a sensor device include a sensor substrate and a first cap substrate attached to the sensor substrate with a first bond material. The first bond material is arranged to define a first device cavity. A second cap substrate is attached to the sensor substrate with a second bond material. The second bond material is arranged to define a second device cavity. The second bond material has a lower bonding temperature than the first bond material. The second cap substrate is further secured to the sensor substrate by an adhesive material disposed between the sensor substrate and the second cap substrate. | 11-12-2015 |
20150329351 | Vacuum Sealed MEMS and CMOS Package - A vacuum sealed MEMS and CMOS package and a process for making the same may include a capping wafer having a surface with a plurality of first cavities, a first device having a first surface with a second plurality of second cavities, a hermetic seal between the first surface of the first device and the surface of the capping wafer, and a second device having a first surface bonded to a second surface of the first device. The second device is a CMOS device with conductive through vias connecting the first device to a second surface of the second device, and conductive bumps on the second surface of the second device. Conductive bumps connect to the conductive through vias and wherein a plurality of conductive bumps connect to the second device. The hermetic seal forms a plurality of micro chambers between the capping wafer and the first device. | 11-19-2015 |
20150329352 | MICROELECTRONIC PACKAGES HAVING STACKED ACCELEROMETER AND MAGNETOMETER DIE AND METHODS FOR THE PRODUCTION THEREOF - Methods for fabricating multi-sensor microelectronic packages and multi-sensor microelectronic packages are provided. In one embodiment, the method includes positioning a magnetometer wafer comprised of an array of non-singulated magnetometer die over an accelerometer wafer comprised of an array of non-singulated accelerometer die. The magnetometer wafer is bonded to the accelerometer wafer to produce a bonded wafer stack. The bonded wafer stack is then singulated to yield a plurality of multi-sensor microelectronic packages each including a singulated magnetometer die bonded to a singulated accelerometer die. | 11-19-2015 |
20150329356 | MEMS STRUCTURE AND METHOD OF MANUFACTURING THE SAME - There are provided a micro electro mechanical systems (MEMS) structure and a method of manufacturing the same. The MEMS structure includes: a middle structure including an insulating layer, a circuit layer formed on the insulating layer, a mass formed beneath the insulating layer, and supports formed so as to be spaced apart from sides of the mass, and having corner portions of sides formed in a concave shape; an upper structure formed so as to enclose an upper portion of the middle structure; and a lower structure formed so as to enclose a lower portion of the middle structure. | 11-19-2015 |
20150330820 | Physical Quantity Sensor - A thermal type sensor molded from a mold resin having an opening has a problem in that the residual stress of the mold resin in the opening causes peeling at the interface having poor adhesion. A physical quantity sensor has a construction having a semiconductor chip having a detector unit | 11-19-2015 |
20150357374 | TRANSISTOR ARRAY AND MANUFACTURING METHOD THEREOF - The disclosure provides a transistor array including a substrate and a plurality of transistor elements sharing the substrate. Each of the transistor elements includes: a bottom electrode disposed on the substrate and a connection wire for the bottom electrode; a piezoelectric body disposed on the bottom electrode, wherein the piezoelectric body is made of piezoelectric material; and a top electrode disposed on the piezoelectric body. The disclosure also provides a method for manufacturing a transistor array. The transistor array contains transistor elements which are two-terminal devices. Piezoelectric bodies with piezoelectric properties are provided between the top electrodes and bottom electrodes of the transistor array. The carrier transport progress of the transistor elements in the transistor array device can be effectively regulated or triggered by strains or stresses applied on the transistor elements. | 12-10-2015 |
20150360933 | CAPACITIVE MEMS SENSOR AND METHOD - A system and method for forming a sensor device includes defining an in-plane electrode in a device layer of a silicon on insulator (SOI) wafer, forming an out-of-plane electrode in a silicon cap layer located above an upper surface of the device layer, depositing a silicide-forming metal on a top surface of the silicon cap layer, and annealing the deposited silicide-forming metal to form a silicide portion in the silicon cap layer. | 12-17-2015 |
20150360937 | Micromechanical component and method for manufacturing same - A micromechanical component includes a sensor chip and a cap chip connected to the sensor chip. A cavity is formed between the sensor chip and the cap chip. The sensor chip has a movable element situated in the cavity. The cap chip has a wiring level containing an electrically conductive electrode. The cap chip has a getter element situated in the cavity. | 12-17-2015 |
20150364455 | STACK OF INTEGRATED-CIRCUIT CHIPS AND ELECTRONIC DEVICE - A stack of chips is formed by a first integrated-circuit chip and a second integrated-circuit chip. The chips have opposing faces which are separated from each other by an interposed spacer. The spacer is fastened by adhesion to only one of the opposing faces. The opposing faces are fastened to each other by a local adhesive which is separate from spacer. | 12-17-2015 |
20150375988 | PRESSURE SENSOR AND MANUFACTURE METHOD THEREOF - A pressure sensor using the MEMS element and the manufacture method thereof utilize the semiconductor processes to form the micro channel connecting to the chamber, open the micro channel, coat the anti-sticking layer on the inner surface of the chamber, and then seal the micro channel to keep the chamber airtight. Therefore, the manufacture method may essentially simplify the process to coat the anti-sticking layer on the inner surface of the airtight chamber to prevent the sticking and failing of the movable MEMS element. | 12-31-2015 |
20160002027 | SEMICONDUCTOR DEVICE WITH THROUGH MOLDING VIAS AND METHOD OF MAKING THE SAME - A method of forming a semiconductor device includes bonding a capping wafer and a base wafer to form a wafer package. The base wafer includes a first chip package portion, a second chip package portion, and a third chip package portion. The capping wafer includes a plurality of isolation trenches. Each isolation trench of the plurality of isolation trenches is substantially aligned with a corresponding trench region of one of the first chip package portion, the second chip package portion or the third chip package portion. The method also includes removing a portion of the capping wafer to expose a first chip package portion contact, a second chip package portion contact, and a third chip package portion contact. The method further includes separating the wafer package into a first chip package configured to perform a first operation, a second chip package configured to perform a second operation, and a third chip package configured to perform a third operation. | 01-07-2016 |
20160016789 | THIN FILM STRUCTURE FOR HERMETIC SEALING - The present disclosure relates to a MEMS device with a hermetic sealing structure, and an associated method. In some embodiments, a first die and a second die are bonded at a bond interface region to form a chamber. A conformal thin film structure is disposed covering an outer sidewall of the bond interface region to provide hermetic sealing. In some embodiments, the conformal thin film structure is a continuous thin layer covering an outer surface of the second die and a top surface of the first die. In some other embodiments, the conformal thin film structure comprises several discrete thin film patches disposed longitudinal. | 01-21-2016 |
20160027992 | PACKAGE-IN-PACKAGE SEMICONDUCTOR SENSOR DEVICE - A semiconductor sensor device includes a device substrate, a micro-controller unit (MCU) die attached to the substrate, and a packaged pressure sensor having a sensor substrate and a pressure sensor die. The sensor substrate has a front side with the pressure sensor die attached to it, a back side, and an opening from the front side to the back side. A molding compound encapsulates the MCU die, the device substrate, and the packaged pressure sensor. A back side of the sensor substrate and the opening in the sensor substrate are exposed on an outer surface of the molding compound. | 01-28-2016 |
20160039661 | MICROMACHINED ULTRA-MINIATURE PIEZORESISTIVE PRESSURE SENSOR AND METHOD OF FABRICATION OF THE SAME - A method of fabrication of one or more ultra-miniature piezoresistive pressure sensors on silicon wafers is provided. The diaphragm of the piezoresistive pressure sensors is formed by fusion bonding. The piezoresistive pressure sensors can be formed by silicon deposition, photolithography and etching processes. | 02-11-2016 |
20160039662 | CHIP PACKAGE AND METHOD THEREOF - A chip package includes a semiconductor chip, an interposer, a polymer adhesive supporting layer, a redistribution layer and a packaging layer. The semiconductor chip has a sensor device and a conductive pad electrically connected to the sensing device, and the interposer is disposed on the semiconductor chip. The interposer has a trench and a through hole, which the trench exposes a portion of the sensing device, and the through hole exposes the conductive pad. The polymer adhesive supporting layer is interposed between the semiconductor chip and the interposer, and the redistribution layer is disposed on the interposer and in the through hole to be electrically connected to the conductive pad. The packaging layer covers the interposer and the redistribution layer, which the packaging layer has an opening exposing the trench. | 02-11-2016 |
20160039666 | METHOD TO PACKAGE MULTIPLE MEMS SENSORS AND ACTUATORS AT DIFFERENT GASES AND CAVITY PRESSURES - A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure. | 02-11-2016 |
20160039668 | APPARATUS AND METHOD TO FABRICATE MEMS DEVCE - A MEMS device and fabrication of MEMS device is disclosed. The method includes providing a device layer, disposing a sacrificial layer over a first surface of the device layer, forming at least one MEMS feature in the device layer, wherein the formed MEMS feature is attached to the sacrificial layer. Selective portions of the sacrificial layer are removed so as to permit movement of the formed MEMS feature. | 02-11-2016 |
20160060105 | MEMS DEVICE AND METHOD FOR MANUFACTURING A MEMS DEVICE - A method for producing a MEMS device comprises forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers. A semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers. After forming the semiconductor layer stack, at least a portion of each of the first and third monocrystalline semiconductor layers is concurrently etched. | 03-03-2016 |
20160075549 | Physical Quantity Detection Device, Electronic Apparatus, and Moving Object - A physical quantity detection device includes a semiconductor element and a physical quantity detection vibrator element a portion of which overlaps the semiconductor element in a plan view of the semiconductor element. The physical quantity detection vibrator element includes a drive portion including a drive electrode, and a detection portion. At least a partial region of the drive electrode does not overlap the semiconductor element in the plan view of the semiconductor element. | 03-17-2016 |
20160075554 | INTERNAL BARRIER FOR ENCLOSED MEMS DEVICES - A MEMS device having a channel configured to avoid particle contamination is disclosed. The MEMS device includes a MEMS substrate and a base substrate. The MEMS substrate includes a MEMS device area, a seal ring and a channel. The seal ring provides for dividing the MEMS device area into a plurality of cavities, wherein at least one of the plurality of cavities includes one or more vent holes. The channel is configured between the one or more vent holes and the MEMS device area. Preferably, the channel is configured to minimize particles entering the MEMS device area directly. The base substrate is coupled to the MEMS device substrate. | 03-17-2016 |
20160090297 | Stress Isolation Platform for MEMS Devices - A MEMS product includes a stress-isolated MEMS platform surrounded by a stress-relief gap and suspended from a substrate. The stress-relief gap provides a barrier against the transmission of mechanical stress from the substrate to the platform. | 03-31-2016 |
20160152465 | MEMS CAPACITIVE PRESSURE SENSORS | 06-02-2016 |
20160159638 | Microelectromechanical Systems Devices with Improved Reliability - An electronic device may include components that are formed using microelectromechanical systems (MEMS) technology. A MEMS device may include a MEMS structure bonded to a semiconductor substrate. The MEMS structure may be formed from a silicon substrate having a cavity and a moveable member suspended over the cavity and free to oscillate within the cavity. The semiconductor substrate may be a complementary metal-oxide semiconductor substrate having circuitry such as sensing electrodes. The sensing electrodes may be used to gather signals that are produced by movement of the suspended member. One or more of the electrodes on the semiconductor substrate may be covered by a dielectric film to prevent electrical shorts between adjacent electrodes on the semiconductor substrate. | 06-09-2016 |
20160167944 | REDUCING MEMS STICTION BY DEPOSITION OF NANOCLUSTERS | 06-16-2016 |
20170233246 | Physical Quantity Sensor | 08-17-2017 |
20170233248 | MICRO SENSOR AND MANUFACTURING METHOD THEREOF | 08-17-2017 |
20190145842 | A DUAL-CAVITY PRESSURE SENSOR DIE AND THE METHOD OF MAKING SAME | 05-16-2019 |