Class / Patent application number | Description | Number of patent applications / Date published |
257231000 | 2-dimensional area architecture | 59 |
20080210984 | Solid-state image capturing device and electronic information device - A device separation insulating film and a device separation semiconductor layer are provided for a device separation section for separating adjacent devices from each other, end portions of the device separation insulating film and end portions of the device separation semiconductor layer are provided to overlap each other in order to surround two sides of an outer-periphery of the voltage conversion section and also to surround a channel section of the charge transfer device and the light receiving devices and an end portion of the device separation insulating film facing an end face of the light receiving device is arranged inwardly below a control electrode with respect to an end face of the control electrode on the light receiving device side. | 09-04-2008 |
20080237652 | Method of Manufacturing a Solid Image Pick-Up Device and a Solid Image Pick-Up Device - A method of manufacturing a solid image pick-up device comprising a photoelectronic conversion portion, a charge transfer portion and a peripheral circuit portion, the method comprising:
| 10-02-2008 |
20080315262 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object of the present invention to provide a solid-state imaging device that can achieve a high sensitivity, finer pixels for increasing the number of pixels, a high-speed operation, and high image quality, and a method for manufacturing the same. There are provided a plurality of photoelectric conversion portions arranged in a matrix on a substrate, a vertical transfer channel arranged between vertical columns of the photoelectric conversion portions, a plurality of vertical transfer electrodes for transferring a charge of the photoelectric conversion portions to the vertical transfer channel, a light-shielding film that is laminated on the vertical transfer electrodes via a first insulating film and has a plurality of window portions, each defining a light-receiving portion of each of the photoelectric conversion portions, and a shunt wiring that is arranged in a region overlapping the vertical transfer channel and is insulated from the light-shielding film by a second insulating film. A driving pulse according to a drive phase of each of the vertical transfer electrodes is supplied from the shunt wiring. | 12-25-2008 |
20090020789 | CHARGE TRANSFER DEVICE AND IMAGING APPARATUS - An HCCD includes a channel | 01-22-2009 |
20090065815 | Solid-state imaging device and imaging apparatus - A solid-state imaging device includes a semiconductor substrate and a plurality of photoelectric conversion elements provided in the semiconductor substrate, wherein the plurality of photoelectric conversion elements include: effective photoelectric conversion elements which are photoelectric conversion elements for obtaining an imaging signal corresponding to light from a subject; and OB photoelectric conversion elements which are photoelectric conversion elements for obtaining a reference signal of an optical black level, and the solid-state imaging device further includes a first shielding layer provided at least over the effective pixel area as defined herein and having an opening provided at least over a part of the effective photoelectric conversion elements, and a second shielding layer provided over the OB pixel area as defined herein and electrically separated from the first shielding layer. | 03-12-2009 |
20090078969 | SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a semiconductor substrate; photoelectric conversion elements; vertical charge transfer paths that transfer charges generated in photoelectric conversion elements, in a vertical direction; a horizontal charge transfer path that transfers the charges transferred in vertical charge transfer paths, in a horizontal direction orthogonal to the vertical direction; a plurality of charge accumulating sections between the vertical charge transfer paths and the horizontal charge transfer path; a plurality of electrodes disposed above the respective charge accumulating sections, the plurality of electrodes being classified into a plurality of kinds of electrodes; wirings corresponding to the respective kinds of electrodes and extending in the horizontal direction above the plurality of electrodes; and a planarizing layer disposed between the wirings and an uneven surface caused by the plurality of electrodes that are present in areas overlapping the wirings, so as to planarize the uneven surface. | 03-26-2009 |
20110220972 | SOLID-STATE IMAGE PICKUP ELEMENT, SOLID-STATE IMAGE PICKUP DEVICE AND PRODUCTION METHOD THEREFOR - It is intended to provide a solid-state image pickup element capable of reducing an area of a read channel to increase a ratio of a surface area of a light-receiving section to the overall surface area of one pixel. The solid-state image pickup element comprises a first-conductive type planar semiconductor layer formed on a second-conductive type planar semiconductor layer, a hole portion formed in the first-conductive type planar semiconductor layer to define a hole therein, a first-conductive type high-concentration impurity region formed in a bottom wall of the hole portion, a first-conductive type high-concentration impurity-doped element isolation region formed in a part of a sidewall of the hole portion and connected to the first-conductive type high-concentration impurity region, a second-conductive type photoelectric conversion region formed beneath the first-conductive type high-concentration impurity region and in a part of a lower region of the remaining part of the sidewall of the hole portion, and adapted to undergo a change in charge amount upon receiving light, a transfer electrode formed on the sidewall of the hole portion through a gate dielectric film, a second-conductive type CCD channel region formed in a top surface of the first-conductive type planar semiconductor layer and in a part of an upper region of the remaining part of the sidewall of the hole portion, and a read channel formed in a region of the first-conductive type planar semiconductor layer sandwiched between the second-conductive type photoelectric conversion region and the second-conductive type CCD channel region. | 09-15-2011 |
20110284929 | SOLID STATE IMAGING DEVICE - In each of pixels | 11-24-2011 |
20110291162 | SOLID STATE IMAGING DEVICE - Each of pixels | 12-01-2011 |
20130075792 | METAL-STRAPPED CCD IMAGE SENSORS - In various embodiments, image sensors include strapping grids of vertical and horizontal strapping lines conducting phase-control signals to underlying gate conductors that control transfer of charge within the image sensor. | 03-28-2013 |
20130092983 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A plurality of photoelectric conversion elements including a first photoelectric conversion element, a second photoelectric conversion element, and a third photoelectric conversion element, are arranged in a photoelectric conversion apparatus of the present invention. Provided, between the first photoelectric conversion element and the second photoelectric conversion element, is a first semiconductor region of a first conductivity type and of a first width in which a signal charge is a minor charier. And, provided, between the first photoelectric conversion element and the third photoelectric conversion element, is a second semiconductor region of the first conductivity type in a higher impurity concentration and of a second width narrower than the first width at a position deeper in a semiconductor substrate rather than a depth of the first semiconductor region. | 04-18-2013 |
20130119439 | METHOD OF PRODUCING A SOLID-STATE IMAGE PICKUP APPARATUS, SOLID-STATE IMAGE PICKUP APPARATUS, AND ELECTRONIC APPARATUS - A method of producing a solid-state image pickup apparatus, including the steps of: forming a plurality of light-receiving portions on a substrate; forming a plurality of transfer gates to be connected to the plurality of light-receiving portions formed on the substrate; forming an insulation film on the substrate; exposing a base by etching the insulation film so that the etched part of the insulation film between the adjacent transfer gates tapers away; and injecting an impurity into the exposed part using the insulation film that has remained after the etching as a mask to thus form an impurity injection portion. | 05-16-2013 |
20130181258 | IMAGE SENSOR AND METHOD OF MANUFACTURING - An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate. | 07-18-2013 |
20130248939 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a plurality of pixels, each pixel including: a photoelectric conversion unit; an amplification element; a first signal holding unit and a second signal holding unit arranged on an electric pathway between the photoelectric conversion unit and an input node of the amplification element; a first electric charge transfer unit configured to transfer an electron of the photoelectric conversion unit to the first signal holding unit; and a second electric charge transfer unit configured to transfer an electron held by the first signal holding unit to the second signal holding unit, wherein a voltage supplied to a first control electrode when the electron of the photoelectric conversion unit is transferred to the first signal holding unit is lower than a voltage supplied to a second control electrode when the electron held by the first signal holding unit is transferred to the second signal holding unit. | 09-26-2013 |
20130248940 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type. | 09-26-2013 |
20130270609 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device is provided with a plurality of photoelectric converting portions each having a photosensitive region and an electric potential gradient forming region, and which are juxtaposed so as to be along a direction intersecting with a predetermined direction, a plurality of buffer gate portions each arranged corresponding to a photoelectric converting portion and on the side of the other short side forming a planar shape of the photosensitive region, and accumulates a charge generated in the photosensitive region of the corresponding photoelectric converting portion, and a shift register which acquires charges respectively transferred from the plurality of buffer gate portions, and transfers the charges in the direction intersecting with the predetermined direction, to output the charges. The buffer gate portion has at least two gate electrodes to which predetermined electric potentials are respectively applied so as to increase potential toward the predetermined direction. | 10-17-2013 |
20130292742 | SOLID STATE IMAGING DEVICE - A solid state imaging device | 11-07-2013 |
20140015013 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - There is provided a solid-state image pickup device including a semiconductor substrate, and a plurality of pixel portions that are provided on the semiconductor substrate. Each of the pixel portions includes a photoelectric converting unit that generates a charge on the basis of incident light, a memory unit that accumulates the charge generated by the photoelectric converting unit, a light shielding portion that shields at least the memory unit from light, a digging portion that digs into the semiconductor substrate between the photoelectric converting unit and the memory unit and is formed of a light shielding material, and a transmitting unit that transmits the charge from the photoelectric converting unit to the memory unit, by forming a channel for transmission in the digging portion. | 01-16-2014 |
20140048853 | Image Sensors - An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed. | 02-20-2014 |
20140103401 | IMAGE SENSOR - An image sensor is provided. The image sensor includes a well of a second conductivity type formed on an impurity layer of a first conductivity type, source and drain regions of the first conductivity type, formed in the well to be spaced apart from each other, a first photo diode of the first conductivity type formed in the well to overlap the source and drain regions, a second photo diode of the first conductivity type formed so as not to overlap the source and drain regions and formed to be adjacent to the first photo diode, and a gate electrode formed on the first and second photo diodes. | 04-17-2014 |
20140175521 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - A solid-state image pickup device, includes: a semiconductor substrate; a semiconductor layer of a first conductivity type formed in the semiconductor substrate and formed for each pixel; a solid-phase diffusion layer of a second conductivity type formed in a surface portion of the semiconductor substrate, the solid-phase diffusion layer facing the semiconductor layer; and an oxide film containing an impurity element of the second conductivity type and formed by an atomic layer deposition method. | 06-26-2014 |
20140191289 | IMAGE SENSORS WITH MULTIPLE OUTPUT STRUCTURES - In various embodiments, image sensors incorporate multiple output structures by including multiple sub-arrays, at least one of which includes a region of active pixels, a dark pixel region that is fanned and/or slanted, a dark pixel region that is unfanned and unslanted, a horizontal CCD, and an output structure for conversion of charge to voltage. | 07-10-2014 |
20140191290 | SOLID-STATE IMAGING ELEMENT - Provided is a solid-state imaging element that effectively reduces 1/f noise from a signal output from a source-follower transistor. The solid-state imaging element includes a first conductivity type substrate | 07-10-2014 |
20140203331 | SOLID STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device has, in a semiconductor substrate, plural PDs arranged two-dimensionally and signal reading circuits which are formed as MOS transistors and read out signals corresponding to charges generated in the respective PDs. Microlenses for focusing light beams are formed over the respective PDs. An interlayer insulating film in which interconnections are buried is formed as an insulating layer between the semiconductor substrate and the microlenses. Closed-wall-shaped structures are formed in the interlayer insulating film so as to surround parts of focusing optical paths of the microlenses, respectively. The structures are made of a nonconductive material that is different in refractive index from a material of what is formed around them. | 07-24-2014 |
20140217475 | MANUFACTURING METHOD OF SOLID-STATE IMAGE PICKUP DEVICE AND SOLID-STATE IMAGE PICKUP DEVICE - In a manufacturing method of a solid-state image pickup device according to an embodiment, a transfer gate electrode is formed in a predetermined position on an upper surface of a first conductive semiconductor area, through a gate insulating film. A second conductive charge storage area is formed in an area adjacent to the transfer gate electrode in the first conductive semiconductor area. A sidewall is formed on a side surface of the transfer gate electrode. An insulating film is formed to extend from a circumference surface of the sidewall on a side of the charge storage area to a position partially covering the upper part of the charge storage area. A first conductive charge storage layer is formed in the charge storage area by implanting first conductive impurities from above, into the charge storage area which is partially covered with the insulating film. | 08-07-2014 |
20140231881 | DEPLETED CHARGE-MULTIPLYING CCD IMAGE SENSOR - In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions. | 08-21-2014 |
20140312392 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, METHOD OF DRIVING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of pixels, each of which includes a photoelectric converter section formed on a first substrate to generate and accumulate signal charges corresponding to incident light, a charge accumulation capacitor section formed on the first substrate or a second substrate to temporarily hold the signal charges transferred from the photoelectric converter section, and a plurality of MOS transistors formed on the second substrate to transfer the signal charges accumulated in the charge accumulation capacitor section, connection electrodes formed on the first substrate, and connection electrodes formed on the second substrate and electrically connected to the connection electrodes formed on the first substrate. | 10-23-2014 |
20150123173 | 3D STACKED IMAGE SENSOR WITH PMOS COMPONENTS - An active pixel sensor comprises a sensor die and a circuit die. The sensor die comprises a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, a floating diffusion region, wherein the plurality of pixels include at least one reset gate. The circuit die comprises a plurality of processing and amplification circuits associated with the reset gates of the sensor die. The sensor die is interconnected with the circuit die utilizing a plurality of inter-die interconnects each coupled to a source node of a reset gate on the sensor die and a node of a processing and amplification circuit on the circuit die. The plurality of processing and amplification circuits each comprises a source follower transistor, wherein the source follower transistor uses a PMOS. | 05-07-2015 |
20150123174 | MATRIX IMAGE SENSOR PROVIDING BIDIRECTIONAL CHARGE TRANSFER WITH ASYMMETRIC GATES - In the field of image sensors, more particularly time-delay integration linear sensors or TDI sensors, a sensor comprises rows of photodiodes alternating with rows of gates adjacent to the photodiodes. The gates are asymmetric, adjacent on one side to a photodiode and having, on the other side, narrow gate fingers extending toward another photodiode. Owing to their very narrow width, the fingers endow the transfer of charges with a directionality. Between two successive photodiodes there are two gates, the two being adjacent to the two photodiodes, the first having its narrow fingers turned toward the first photodiode, the second having its narrow fingers turned toward the second photodiode. The direction of transfer of the charges in the sensor may be chosen by neutralizing either the first gate or the second gate, the other gate receiving alternating potentials allowing the transfer of charges from one photodiode to the other. | 05-07-2015 |
20150325519 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH SEMICONDUCTOR DEVICE - The invention relates to a semiconductor device comprising: i) a substrate ( | 11-12-2015 |
20150357362 | SOLID-STATE IMAGING APPARATUS AND ELECTRONIC DEVICE - Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other. | 12-10-2015 |
20160013237 | SOLID-STATE IMAGING DEVICE | 01-14-2016 |
20160027826 | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - An image sensor and a manufacturing method thereof are provided. The image sensor includes: a photo diode; a first-conductive-type isolating layer; a second-conductive-type lightly-doped region formed in the first-conductive-type semiconductor substrate; a first-conductive-type lightly-doped region formed under the second-conductive-type lightly-doped region, where the second-conductive-type lightly-doped region is isolated from the second-conductive-type region by the first-conductive-type lightly-doped region; a gate structure of a transfer transistor; and a floating diffusion region which is second-conductive-type heavily-doped. In the image sensor, the second-conductive-type lightly-doped region is formed to be connected with the floating diffusion region, thus, a distance between the floating diffusion region and the photo diode may be reduced which may enable photo-induced carriers to be transmitted from the photo diode to the floating diffusion region more rapidly, and further increase the transmission efficiency of the photo-induced carriers. | 01-28-2016 |
20160049429 | GLOBAL SHUTTER IMAGE SENSOR, AND IMAGE PROCESSING SYSTEM HAVING THE SAME - A global shutter image sensor according to an exemplary embodiment of the present inventive concepts includes a semiconductor substrate including a first surface and a second surface, a photo-electric conversion region formed in the semiconductor substrate, a storage diode formed in a vicinity of the photo-electric conversion region in the semiconductor substrate, a drain region formed above the photo-electric conversion region in the semiconductor substrate, a floating diffusion region formed above the storage diode in the semiconductor substrate, an overflow gate transferring first charges from the photo-electric conversion region to the drain region, a storage gate transferring second charges from the photo-electric conversion region to the storage diode, and a transfer gate transferring the second charges from the storage diode to the floating diffusion region. The overflow gate, the photo-electric conversion region, the storage gate, the storage diode, the transfer gate, and the floating diffusion region are formed in a row. | 02-18-2016 |
20160079294 | IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING THE SAME - To prevent deterioration in the sensitivity of a pixel part caused by variation in the distance between a waveguide and a photo diode and by decay of light due to suppression of reflection of entering light. In a pixel region, there is formed a waveguide which penetrates through a fourth interlayer insulating film or the like and reaches a sidewall insulating film. The sidewall insulating film is configured to have a stacked structure of a silicon oxide film and a silicon nitride film. The waveguide is formed so as to penetrate through even the silicon nitride film of the sidewall insulating film and to reach the silicon oxide film of the sidewall insulating film, or so as to reach the silicon nitride film of the sidewall. | 03-17-2016 |
20160133659 | DEPTH SENSING PIXEL, COMPOSITE PIXEL IMAGE SENSOR AND METHOD OF MAKING THE COMPOSITE PIXEL IMAGE SENSOR - A depth sensing pixel includes a photodiode; a first photo storage device; and a first transistor configured to selectively couple the photodiode to the first photo storage device. The depth sensing pixel further includes a second photo storage diode different from the first photo storage device; and a second transistor configured to selectively couple the photodiode to the second photo storage device. The depth sensing pixel further includes a first transfer gate configured to selectively couple the first photo storage diode to a first output node. The depth sensing pixel further includes a second transfer gate configured to selectively couple the second photo storage diode to a second output node. | 05-12-2016 |
20160155774 | SOLID-STATE IMAGE SENSOR AND CAMERA | 06-02-2016 |
20160172408 | SOLID-STATE IMAGING APPARATUS | 06-16-2016 |
20160254305 | SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE | 09-01-2016 |
20190148449 | SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, AND ELECTRONIC DEVICE | 05-16-2019 |
257233000 | Sensors not overlaid by electrode (e.g., photodiodes) | 19 |
20080210985 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed on at least a portion of a surface of the region of the first conductivity type; a multilayer wiring layer formed on the substrate; and a layer of the second conductivity type formed directly above the region of the second conductivity type in the multilayer wiring layer, connected to the region of the second conductivity type. A concentration of impurities in the layer of the second conductivity type is lower with decreasing proximity to the region of the second conductivity type. | 09-04-2008 |
20080217661 | TWO-DIMENSIONAL TIME DELAY INTEGRATION VISIBLE CMOS IMAGE SENSOR - A two dimensional time delay integration CMOS image sensor having a plurality of pinned photodiodes, each pinned photodiode collects a charge when light strikes the pinned photodiode, a plurality of electrodes separating the plurality of pinned photodiodes, the plurality of electrodes are configured for two dimensional charge transport between two adjacent pinned photodiodes, and a plurality of readout nodes connected to the plurality of pinned photodiodes via address lines. | 09-11-2008 |
20080237653 | Deep Implant Self-Aligned To Polysilicon Gate - A CMOS image sensor includes a pinned photodiode and a transfer gate that are formed using a thick mask that is self-aligned to at least one edge of the polysilicon gate structure to facilitate both the formation of a deep implant and to provide proper alignment between the photodiode implant and the gate. In one embodiment a drain side implant is formed concurrently with the deep n-type implant of the photodiode. After the deep implant, the mask is removed and a shallow p+ implant is formed to complete the photodiode. In another embodiment, the polysilicon is etched to define only a drain side edge, a shallow drain side implant is performed, and then a thick mask is provided and used to complete the gate structure, and is retained during the subsequent high energy implant. Alternatively, the high energy implant is performed prior to the shallow drain side implant. | 10-02-2008 |
20080265288 | INTERLINE CCD IMPLEMENTATION OF HYBRID TWO COLOR PER PIXEL ARCHITECTURE - An image sensor includes at least first and second photo-sensitive regions; a color filter array having at least two different colors that selectively absorb specific bands of wavelengths, and the two colors respectively span portions of predetermined photo-sensitive regions; and wherein the two photo sensitive regions are doped so that electrons that are released at two different depths in the substrate are collected in two separate regions of the photo sensitive regions so that, when wavelengths of light pass through the color filter array, light is absorbed by the photo sensitive regions which photo sensitive regions consequently releases electrons at two different depths of the photo sensitive regions and are stored in first and second separate regions; at least two charge-coupled devices adjacent the first photo sensitive regions; and a first transfer gate associated with the first photo sensitive region that selectively passes charge at first and second levels which, when at the first level, causes the charge stored in the first region to be passed to one of its associated charge-coupled devices, and when the transfer gate is at the second level, charge stored in the second region is passed to one of the associated charge-coupled devices. | 10-30-2008 |
20080272399 | PIXEL SENSOR CELL FOR COLLECTING ELECTRONS AND HOLES - The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input. | 11-06-2008 |
20080272400 | PIXEL SENSOR CELL FOR COLLECTING ELECTRONS AND HOLES - The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input. | 11-06-2008 |
20080296629 | Solid-state imaging device, method of manufacturing the same, and imaging apparatus - A solid-state imaging device includes a semiconductor substrate; a first conductive region of the semiconductor substrate; a first conductive region on an upper surface side of the first conductive region of the semiconductor substrate; a second conductive region below the first conductive region on the upper surface side of the first conductive region of the semiconductor substrate. The solid-state imaging device further includes a photoelectric conversion region including the first conductive region located on the upper surface side of the first conductive region of the semiconductor substrate and the second conductive region and a transfer transistor transferring charges accumulated in the photoelectric conversion region to a readout region; and a pixel including the photoelectric conversion region and the transfer transistor. The first conductive region, which is included in the photoelectric conversion region, extends to the lower side of a sidewall of a gate electrode of the transfer transistor. | 12-04-2008 |
20080315263 | IMAGER PIXEL STRUCTURE AND CIRCUIT - An imager pixel and imaging device and system including an imager pixel for discharging a floating diffusion region are described. The imager pixel includes a photoconversion regions floating diffusion region, and a reset diode. A reset diode is coupled to the floating diffusion region and, when activated, discharges accumulated and collected charge from the photoconversion and the floating diffusion regions. Following successive accumulation, transfer and collection processes, the reset diode again discharges residual accumulated and collected charge from the photoconversion and the floating diffusion regions. | 12-25-2008 |
20090001428 | Optimized transistor for imager device - An imager device that has mitigated dark current leakage and punch-through protection. The transistor associated with the photoconversion device is formed with a single (i.e. one-sided) active area extension region on one side of the transistor gate opposite the photoconversion device, while other transistors can have normal symmetrical (i.e, two-sided) active area extension regions (e.g., lightly doped drains) with resulting high performance and short gate lengths. The asymmetrical active area extension region of the transistor associated with the photodiode can serve to reduce dark current at the photoconversion device. The punch-through problem normally cured by a lightly doped drain is fixed at the transistor associated with the photoconversion device by adding a V | 01-01-2009 |
20090039397 | IMAGE SENSOR STRUCTURE - An avalanche photodiode is deposited and integrated directly on top of CMOS readout circuitry. The anode of the avalanche photodiode may be independently biased at high voltage so that the avalanche photodiode may be operated in an avalanche multiplication mode. The avalanche photodiode has a multi-layered structure which is not pixilated; and photo-carrier generation and carrier multiplication may take place in the same layer or in different layers. A constant-gate-bias transistor isolates the high-voltage avalanche photodiode from the low-voltage the CMOS readout circuitry. | 02-12-2009 |
20090085070 | Solid-state image pickup device, method of manufacturing solid-state image pickup device, and image pickup device - Disclosed herein is a solid-state image pickup device including, a plurality of light receiving units, a transfer channel, a first transfer electrode, a second transfer electrode, first wiring, and second wiring. | 04-02-2009 |
20090189197 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first direction, signals generated by the light-receiving parts; a second transfer section provided at a first side of the imaging region and transferring, in a second direction intersecting the first direction, the signals transferred from the first transfer section; an output circuit for outputting the signals; and bonding pads provided at the first side of the imaging region with the second transfer section sandwiched between the imaging region and the bonding pads. The bonding pads are arranged in a plurality of rows each extending in the second direction. Each of the bonding pads in one of the rows at least partially overlaps one of the bonding pads in another one of the rows when viewed in the first direction. | 07-30-2009 |
20090200580 | Image sensor and pixel including a deep photodetector - What is disclosed is an apparatus comprising a transfer gate formed on a substrate and a photodiode formed in the substrate next to the transfer gate. The photodiode comprises a shallow N-type collector formed in the substrate, a deep N-type collector formed in the substrate, wherein a lateral side of the deep N-type collector extends at least under the transfer gate, and a connecting N-type collector formed in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. Also disclosed is a process comprising forming a deep N-type collector in the substrate, forming a shallow N-type collector formed in the substrate, and forming a connecting N-type collector in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. A transfer gate is formed on the substrate next to the deep photodiode, wherein a lateral side of the deep N-type collector extends at least under the transfer gate. Other embodiments are disclosed and claimed. | 08-13-2009 |
20100230730 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first direction, signals generated by the light-receiving parts; a second transfer section provided at a first side of the imaging region and transferring, in a second direction intersecting the first direction, the signals transferred from the first transfer section; an output circuit for outputting the signals; and bonding pads provided at the first side of the imaging region with the second transfer section sandwiched between the imaging region and the bonding pads. The bonding pads are arranged in a plurality of rows each extending in the second direction. Each of the bonding pads in one of the rows at least partially overlaps one of the bonding pads in another one of the rows when viewed in the first direction. | 09-16-2010 |
20130140610 | SOLID-STATE IMAGING DEVICE AND CAMERA - A solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element. | 06-06-2013 |
20150357358 | SOLID-STATE IMAGE SENSOR AND CAMERA - An image sensor including a first semiconductor region of a first conductivity type that is arranged in a substrate, a second semiconductor region of a second conductivity type that is arranged in the first semiconductor region to form a charge accumulation region. The second semiconductor region includes a plurality of portions arranged in a direction along a surface of the substrate. A potential barrier is formed between the plurality of portions. The second semiconductor region is wholly depleted by expansion of a depletion region from the first semiconductor region to the second semiconductor region. A finally-depleted portion to be finally depleted, of the second semiconductor region, is depleted by the expansion of the depletion region from a portion of the first semiconductor region, located in a lateral direction of the finally-depleted portion. | 12-10-2015 |
20160020236 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device ( | 01-21-2016 |
20160020237 | SOLID STATE IMAGE SENSOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE - There is provided a solid state image sensor including a photoelectric conversion unit formed and embedded in a semiconductor substrate, an impurity region that retains an electric charge generated by the photoelectric conversion unit, and a transfer transistor that transfers the electric charge to the impurity region. A gate electrode of the transfer transistor is formed in a depth direction toward the photoelectric conversion unit in the semiconductor substrate, from a surface of the semiconductor substrate on which the impurity region is formed. A channel portion of the transfer transistor is surrounded by the gate electrode in two or more directions other than a direction of the impurity region, as seen from the depth direction. | 01-21-2016 |
20160049440 | IMAGE PICKUP UNIT AND ELECTRONIC APPARATUS - A solid-state image pickup unit includes substrate; a red pixel including a red charge storage section; a blue pixel including a blue charge storage section; and a green pixel including a plurality of green charge storage sections, the red charge storage section and the blue charge storage section being provided in the substrate. Then, the plurality of green charge storage sections are arranged in the substrate along a thickness direction of the substrate. | 02-18-2016 |