Charge transfer device

Subclass of:

257 - Active solid-state devices (e.g., transistors, solid-state diodes)

257213000 - FIELD EFFECT DEVICE

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application number	Description	Number of patent applications / Date published
257225000	Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.)	278
257216000	Majority signal carrier (e.g., buried or bulk channel, or peristaltic)	55
257239000	Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output)	12
257235000	Electrical input	1
20110186913	SOLID STATE IMAGING DEVICE WITH ELECTRON MULTIPLYING FUNCTION - In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer	08-04-2011
257242000	Vertical charge transfer	1
20140191291	METHOD OF MANUFACTURING A NON-VOLATILE MEMORY - The disclosure relates to a method of manufacturing vertical gate transistors in a semiconductor substrate, comprising implanting, in the depth of the substrate, a doped isolation layer, to form a source region of the transistors; forming, in the substrate, parallel trench isolations and second trenches perpendicular to the trench isolations, reaching the isolation layer, and isolated from the substrate by a first dielectric layer; depositing a first conductive layer on the surface of the substrate and in the second trenches; etching the first conductive layer to form the vertical gates of the transistors, and vertical gate connection pads between the extremity of the vertical gates and an edge of the substrate, while keeping a continuity zone in the first conductive layer between each connection pad and a vertical gate; and implanting doped regions on each side of the second trenches, to form drain regions of the transistors.	07-10-2014

Entries
Document	Title	Date
20080224179	CCD Array with Integrated High Voltage Protection Circuit - A CCD containing circuit and method for making the same. The circuit includes a CCD array and a protection circuit. The CCD array is constructed on an integrated circuit substrate and includes a plurality of gate electrodes that are insulated from the substrate by an insulating layer. The gate electrodes are connected to a conductor bonded to the substrate. The protection circuit is also constructed on the substrate. The protection circuit is connected to the conductor and to the substrate and protects the CCD array from both negative and positive voltage swings generated by electrostatic discharge events and the like. The protection circuit and the CCD can be constructed in the same integrated circuit fabrication process.	09-18-2008
20080237651	CHARGE TRANSFER DEVICE - A charge transfer device	10-02-2008
20120205723	RANGE SENSOR AND RANGE IMAGE SENSOR - A range image sensor capable of improving its aperture ratio and yielding a range image with a favorable S/N ratio is provided. A range image sensor RS has an imaging region constituted by a plurality of one-dimensionally arranged units on a semiconductor substrate	08-16-2012
20130228828	RANGE SENSOR AND RANGE IMAGE SENSOR - A range sensor includes a charge generating region, a signal charge collecting region, an unnecessary charge collecting region, a photogate electrode, a transfer electrode, and an unnecessary charge collecting gate electrode. Outer peripheries of the charge generating region extend to sides of a polygonal pixel region except for corner portions thereof. The signal charge collecting region is disposed at a center portion of the pixel region and inside the charge generating region so as to be surrounded by the charge generating region. The unnecessary charge collecting region is disposed in the corner portion of the pixel region and outside the charge generating region. The photogate electrode is disposed on the charge generating region. The transfer electrode is disposed between the signal charge collecting region and the charge generating region. The unnecessary charge collecting gate electrode is disposed between the unnecessary charge collecting region and the charge generating region.	09-05-2013