| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257228000 | Light responsive, back illuminated | 30 |
| 20080224181 | BACK IRRADIATING TYPE SOLID STATE IMAGING DEVICE - A back irradiating type solid state imaging device comprises: a first semiconductor substrate; a plurality of photoelectric converting devices that receives a light incident from a back side of the first semiconductor substrate and are formed in a two-dimensional array on a surface side of the first semiconductor substrate; a CCD type signal reading section that are formed on the surface side of the first semiconductor substrate and reads detection signals of the photoelectric converting devices; and a MOS type signal reading section that are formed on the surface side of the first semiconductor substrate and reads detection signals of the photoelectric converting devices. | 09-18-2008 |
| 20080258178 | Method of forming a MOS transistor - A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of CO, CO | 10-23-2008 |
| 20090039396 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - A semiconductor substrate includes: a first semiconductor layer; an oxide layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the oxide layer; a first recess that is formed in the second semiconductor layer with extending from an upper face of the second semiconductor layer toward the first semiconductor layer, the first recess being formed at a position where an alignment mark for determining a forming position of an element which is to be built in the semiconductor substrate is to be formed; and an etching prevention layer that is inwardly formed from a position of an upper face of the first semiconductor layer, the position corresponding to the recess, the layer comprising a material that is prevented from being etched during etching of the first semiconductor layer. | 02-12-2009 |
| 20090242939 | WAFER FOR BACKSIDE ILLUMINATION TYPE SOLID IMAGING DEVICE, PRODUCTION METHOD THEREOF AND BACKSIDE ILLUMINATION SOLID IMAGING DEVICE - A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing n-type or p-type semiconductor material through an insulating layer. | 10-01-2009 |
| 20090289283 | Wafer For Backside Illumination Type Solid Imaging Device, Production Method Thereof And Backside Illumination Solid Imaging Device - A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing p-type semiconductor material through an insulating layer. | 11-26-2009 |
| 20100193845 | BACKSIDE ILLUMINATION SEMICONDUCTOR IMAGE SENSOR - A backside illumination semiconductor image sensor, wherein each photodetection cell includes a semiconductor body of a first conductivity type of a first doping level delimited by an insulation wall, electron-hole pairs being capable in said body after a backside illumination; on the front surface side of said body, a ring-shaped well of the second conductivity type, this well delimiting a substantially central region having its upper portion of the first conductivity type of a second doping level greater than the first doping level; and means for controlling the transfer of charge carriers from said body to said upper portion. | 08-05-2010 |
| 20100230729 | PIXEL SENSOR CELL INCLUDING LIGHT SHIELD - CMOS image sensor pixel sensor cells, methods for fabricating the pixel sensor cells and design structures for fabricating the pixel sensor cells are designed to allow for back side illumination in global shutter mode by providing light shielding from back side illumination of at least one transistor within the pixel sensor cells. In a first particular generalized embodiment, a light shielding layer is located and formed interposed between a first semiconductor layer that includes a photoactive region and a second semiconductor layer that includes the at least a second transistor, or a floating diffusion, that is shielded by the light blocking layer. In a second generalized embodiment, a thin film transistor and a metal-insulator-metal capacitor are used in place of a floating diffusion, and located shielded in a dielectric isolated metallization stack over a carrier substrate | 09-16-2010 |
| 20100320507 | Electronic device, method for manufacturing the same, and silicon substrate for electronic device - An electronic device is formed by epitaxially growing a Si substrate on a Si layer of an SOI substrate in which the Si layer is deposited on a front surface of a substrate with an insulating layer interposed therebetween; forming an element on a front-surface side of the Si substrate; and forming a back-surface element aligned with respect to the element, on a back-surface side of the Si substrate after the substrate is etched. A mark is formed by etching and removing the Si layer and the insulating layer in a predetermined position of the SOI substrate. The element is formed using a concave part as a reference position. The concave part appears on the front surface of the Si substrate epitaxially grown on the mark. The back-surface element is formed using the mark as a reference position. The mark appears after the substrate is etched. | 12-23-2010 |
| 20110084317 | BACK-ILLUMINATED TYPE SOLID-STATE IMAGING DEVICE - A back-illuminated type solid-state imaging device including (a) a semiconductor layer on a front surface side of a semiconductor substrate with an insulation film between them; (b) a photoelectric conversion element that constitutes a pixel in the semiconductor substrate; (c) at least part of transistors that constitute the pixel in the semiconductor film; and (d) a rear surface electrode to which a voltage is applied on the rear surface side of the semiconductor substrate, wherein, (1) a semiconductor layer of an opposite conduction type to a charge accumulation portion of the photoelectric conversion element is formed in the semiconductor substrate under the insulation film, and (2) the same voltage as the voltage applied to the rear surface electrode is applied to the semiconductor layer. | 04-14-2011 |
| 20110169055 | BACK SIDE ILLUMINATION IMAGE SENSOR AND A PROCESS THEREOF - A process and structure of a back side illumination (BSI) image sensor are disclosed. An n-type doped region is formed in a substrate, and a transfer gate is formed on top of the semiconductor substrate. A p-type doped region is formed in the n-type doped region either using the transfer gate as a mask or is non-self aligned formed. | 07-14-2011 |
| 20110220970 | SOLID STATE IMAGING DEVICE - In one embodiment, a semiconductor substrate has first and second principal surfaces opposite to each other, and has a penetration hole extending from the first principal surface to the second principal surface. An imaging element portion is formed on the first principal surface side. A first insulating film is formed on the first principal surface side. An interconnection electrode is formed in the first insulating film and connected to the imaging element portion. A second insulating film is provided to cover a surface of the penetration hole and the second principal surface except at least a portion facing the interconnection electrode. The second insulating film contains particles and is configured to intercept an infrared ray and to transmit a visible light. A conductor film contacts the interconnection electrode and is formed on the second insulating film. | 09-15-2011 |
| 20110220971 | PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS - Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction. | 09-15-2011 |
| 20140327051 | IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - An image sensor and a method of manufacturing the image sensor are provided. The image sensor may include a photo detecting device and a charge storage device. The image sensor may further include a trench and a shield which blocks light from being absorbed by the charge storage device. The charge storage device may temporarily store accumulated charges by the photo detecting device. | 11-06-2014 |
| 20140339606 | BSI CMOS IMAGE SENSOR - A back surface illuminated image sensor is provided. The back surface illuminated image sensor includes: a first passivation layer disposed on the photodiode array; an oxide grid disposed on the first passivation layer and forming a plurality of holes exposing the first passivation layer; a color filter array including a plurality of color filters filled into the holes, wherein the oxide grid has a refractive index smaller than that of plurality of color filters; and a metal grid aligned to the oxide grid, wherein the metal grid has an extinction coefficient greater than zero. | 11-20-2014 |
| 20150060951 | IMAGE SENSORS OPERABLE IN GLOBAL SHUTTER MODE AND HAVING SMALL PIXELS WITH HIGH WELL CAPACITY - An image sensor operable in global shutter mode ma include small pixels with high charge storage capacity, low dark current, and no image lag. Storage capacity of a photodiode and a charge storage diode may be increased by placing a p+ type doped layer under the photodiode and the charge storage diode. The p+ type doped layer ma include an opening for allowing photo-generated charge carriers to flow from the silicon bulk to the charge storage well located near the surface of the photodiode. A compensating n− type doped implant may be formed in the opening. Image lag is prevented by placing a p− type doped region under the p+ type doped photodiode pinning layer and aligned with the opening. The p+ type doped layer may extend under the entire pixel array. | 03-05-2015 |
| 20150069471 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device includes a pixel having a photoelectric conversion element which generates a charge in response to incident light, a first transfer gate which transfers the charge from the photoelectric conversion element to a charge holding section, and a second transfer gate which transfers the charge from the charge holding section to a floating diffusion. The first transfer gate includes a trench gate structure having at least two trench gate sections embedded in a depth direction of a semiconductor substrate, and the charge holding section includes a semiconductor region positioned between adjacent trench gate sections. | 03-12-2015 |
| 20150097213 | IMAGE SENSOR AND PIXELS INCLUDING VERTICAL OVERFLOW DRAIN - Embodiments of an apparatus comprising a pixel array including a plurality of pixels formed in a substrate having a front surface and a back surface, each pixel including a photosensitive region formed at or near the front surface and extending into the substrate a selected depth from the front surface. A filter array is coupled to the pixel array, the filter array including a plurality of individual filters each optically coupled to a corresponding photosensitive region, and a vertical overflow drain (VOD) is positioned in the substrate between the back surface and the photosensitive region of at least one pixel in the array. | 04-09-2015 |
| 20150380448 | BACK SIDE ILLUMINATED SEMICONDUCTOR STRUCTURE WITH SEMICONDUCTOR CAPACITOR CONNECTED TO FLOATING DIFFUSION NODE - There is provided a back side illuminated semiconductor structure with a semiconductor capacitor connected to a floating diffusion node in which the semiconductor capacitor for reducing a dimension of the floating diffusion node is provided above the floating diffusion node so as to eliminate the influence thereto by incident light and enhance the light absorption efficiency. | 12-31-2015 |
| 20160111457 | SOLID-STATE IMAGING DEVICE - A backside illumination-type solid-state imaging device is provided in which an amount of accumulated charge of a photodiode is increased and a read out path of a stacked-type photodiode is simplified. A photodiode of a backside illumination-type solid-state imaging device is made to be of an accumulation gate structure, and thereby the amount of accumulated charge and sensitivity are increased. Further, a barrier region is provided in the direction of incident light so as to separate the photodiode, and the height of barrier at the barrier region is controlled by a pulse voltage applied to the accumulation gate, so that transfer of signal charges between the stacked-type photodiodes separated in the direction of incident light is controlled, making reading out of the stacked-type photodiode simple. | 04-21-2016 |
| 20160118422 | IMAGING ELEMENT AND METHOD OF MANUFACTURING THE SAME - A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount, a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element, a first light-shielding section formed at a first side of the memory unit and disposed between the charge accumulation region and the photoelectric conversion element, and a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side. | 04-28-2016 |
| 20160126266 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING A SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode. | 05-05-2016 |
| 20160141316 | Low Full-Well Capacity Image Sensor with High Sensitivity - Image sensor pixels having low full-well capacity and high sensitivity for applications such as DIS, qDIS, single/multi bit QIS. Some embodiments provide an image sensor pixel architecture, comprises a transfer gate, a floating diffusion region both formed on a first surface of a semiconductor substrate and a buried-well vertically pinned photodiode having a charge accumulation/storage region disposed substantially or entirely beneath the transfer gate. Image sensor may also comprise an array of pixels, wherein each pixel comprises: a vertical bipolar structure including an emitter, base, collector configured for storing photocarriers in the base; and a reset transistor coupled to the base, configured to be completely reset of all free carriers using the reset transistor. The emitter may be configured as a pinning layer to facilitate full depletion of the base. Such image sensor pixels may have a full well capacity less than that giving good signal-to-noise ratio (SNR). | 05-19-2016 |
| 20160141324 | SEMICONDUCTOR IMAGE SENSOR MODULE, METHOD FOR MANUFACTURING THE SAME AS WELL AS CAMERA AND METHOD FOR MANUFACTURING THE SAME - A semiconductor image sensor module | 05-19-2016 |
| 20160148960 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a photoelectric converting layer, a charge accumulating layer, and a light collecting unit are provided. The photoelectric converting layer is formed at a back surface side of a semiconductor substrate. The charge accumulating layer is formed at a front surface side of the semiconductor substrate, and accumulates charges photoelectric-converted by the photoelectric converting layer. The light collecting unit makes light incident to the back surface side of the semiconductor substrate to be collected on the photoelectric converting layer not to be incident to the charge accumulating layer. | 05-26-2016 |
| 20160181301 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF | 06-23-2016 |
| 20170236863 | Method of Manufacturing Image Sensor Having Enhanced Backside Illumination Quantum Efficiency | 08-17-2017 |
| 20180026062 | IMAGING ELEMENT AND METHOD OF MANUFACTURING THE SAME | 01-25-2018 |
| 20180026066 | BACK-SIDE ILLUMINATED (BSI) IMAGE SENSOR WITH GLOBAL SHUTTER SCHEME | 01-25-2018 |
| 20190148444 | SOLID STATE IMAGING DEVICE FOR REDUCING DARK CURRENT, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS | 05-16-2019 |
| 20190148446 | SOLID-STATE IMAGE PICKUP DEVICE | 05-16-2019 |
