| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257226000 | Sensor element and charge transfer device are of different materials or on different substrates (e.g., "hybrid") | 7 |
| 20080224180 | RADIATION DETECTING SYSTEM - A radiation detecting system includes at least a carrier collective electrode layer, a radiation-sensitive semiconductor layer, at least one charge transfer layer, and a voltage applying electrode formed on an insulating substrate and wherein at least one of the charge transfer layers includes chalcogenide compounds containing therein chalcogenide elements larger than the stoichiometric value by not smaller than 3% of the stoichiometric value in a composition thereof. | 09-18-2008 |
| 20090230437 | SEMICONDUCTOR RANGE-FINDING ELEMENT AND SOLID-STATE IMAGING DEVICE - A part of a semiconductor layer directly under a light-receiving gate electrode functions as a charge generation region, and electrons generated in the charge generation region are injected into a part of a surface buried region directly above the charge generation region. The surface buried region directly under a first transfer gate electrode functions as a first transfer channel, and the surface buried region directly under a second transfer gate electrode functions as a second transfer channel. Signal charges are alternately transferred to an n-type first floating drain region and a second floating drain region through the first and second floating transfer channels. | 09-17-2009 |
| 20100237390 | SOLID-STATE IMAGE CAPTURING ELEMENT AND ELECTRONIC INFORMATION DEVICE - A solid-state image capturing element according to the present invention includes a one conductivity type semiconductor substrate; an opposite conductivity type well region formed on the one conductivity type semiconductor substrate; a photodiode section formed on the opposite conductivity type well region, constituted of a plurality of one conductivity type regions with successively different impurity concentrations for complete electric charge transferring; a one conductive drain region capable of reading out signal charges from the photodiode section; and a transfer gate formed above a substrate between the one conductivity drain region and the photodiode section. | 09-23-2010 |
| 20110084316 | PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region. | 04-14-2011 |
| 20140361347 | STACKED WAFER STRUCTURE AND FABRICATING METHOD THEREOF - A stacked wafer structure includes a CIS wafer, an ISP wafer, a lamination layer, a through silicon via and a pixel device. The CIS wafer bonds to the ISP wafer through the lamination layer. The pixel device is disposed on the CIS wafer. The through silicon via penetrates either the CIS wafer or the ISP wafer to connect devices in CIS wafer to the devices in ISP wafer electrically. | 12-11-2014 |
| 20150115330 | IMAGE SENSOR USING BACKSIDE ILLUMINATION PHOTODIODE AND METHOD FOR MANUFACTURING THE SAME - A technology capable of simplifying a process and securing a misalignment margin when bonding two wafers to manufacture an image sensor using backside illumination photodiodes. When manufacturing an image sensor through a 3D CIS (CMOS image sensor) manufacturing process, two wafers, that is, a first wafer and a second wafer are electrically connected using the vias of one wafer and the bonding pads of the other wafer. Also, when manufacturing an image sensor through a 3D CIS manufacturing process, two wafers are electrically connected using the vias of both the two wafers. | 04-30-2015 |
| 20160043126 | VERTICALLY STACKED IMAGE SENSOR - A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate. | 02-11-2016 |
