| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257211000 | Multi-level metallization | 56 |
| 20080237648 | MULTI-LEVEL INTERCONNECTIONS FOR AN INTEGRATED CIRCUIT CHIP - Multilevel metallization layouts for an integrated circuit chip including transistors having first, second and third elements to which metallization layouts connect. The layouts minimize current limiting mechanism including electromigration by positioning the connection for the second contact vertically from the chip, overlapping the planes and fingers of the metallization layouts to the first and second elements and forming a pyramid or staircase of multilevel metallization layers to smooth diagonal current flow. | 10-02-2008 |
| 20080237649 | Integrated circuits and interconnect structure for integrated circuits - An integrated circuit includes N plane-like metal layers. A first plane-like metal layer includes M contact portions that communicate with the N plane-like metal layers, respectively. The first plane-like metal layer and the N plane-like metal layers are located separate planes. First and second drain regions have a symmetric shape across at least one of horizontal and vertical centerlines. First and second gate regions have a first shape that surrounds the first and second drain regions, respectively. First and second source regions are arranged adjacent to and on one side of the first gate region, the second gate region and the connecting region. The first source region, the second source region, the first drain region and the second drain region communicate with at least two of the N plane-like metal layers. | 10-02-2008 |
| 20080283873 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a first semiconductor layer including a first circuit, a second semiconductor layer disposed on the first semiconductor layer and having a second circuit, and a via extending through portions of the first and second semiconductor layers and by which the first and second circuits are electrically connected. One of the circuits is a logic circuit and the other of the circuits is a memory circuit. The semiconductor device is manufactured by fabricating transistors of the logic and memory circuits on respective substrates, stacking the substrates, and electrically connecting the logic and memory circuits with a via. | 11-20-2008 |
| 20090020785 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device includes: a semiconductor substrate, on which diffusion layers are formed; and multilayered wirings stacked above the semiconductor substrate to be connected to the diffusion layers via contact plugs, wherein a first wring and a second wiring formed thereabove are connected to the diffusion layers via first contact plug(s) and second contact plugs, respectively, and the number of the second contact plugs arrayed in parallel is set to be greater than that of the first contact plug(s). | 01-22-2009 |
| 20090026503 | SEMICONDUCTOR DEVICE - CMOS inverters are included in a standard cell. Power supply lines are electrically connected to CMOS inverters, and include lower layer interconnects and upper layer interconnect. Lower layer interconnects extend along a boundary of standard cells adjacent to each other and on the boundary. Upper layer interconnects are positioned more inside in standard cell than lower layer interconnects, as viewed from a plane. CMOS inverters are electrically connected through upper layer interconnects to lower layer interconnects. Thus, a semiconductor device is obtained that can achieve both higher speeds and higher integration. | 01-29-2009 |
| 20090032847 | SEMICONDUCTOR WAFER AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A semiconductor wafer and a manufacturing method for a semiconductor device are provided, which prevent peeling-off of films and pattern skipping in a wafer edge portion. A silicone substrate has formed thereon gate structures in active regions isolated by a trench isolation film; a contact interlayer film; and a multilayer interconnection structure formed by alternate laminations of low-k via interlayer films, i.e., V layers, and low-k interconnect interlayer films, i.e., M layers. In a Fine layer ranging from first to fifth interlayer films, the M layers are removed from the wafer edge portion, but the V layers are not removed therefrom. Further, the contact interlayer film is not removed from the wafer edge portion. | 02-05-2009 |
| 20090065813 | CONFIGURING STRUCTURED ASIC FABRIC USING TWO NON-ADJACENT VIA LAYERS - An application-specific integrated circuit (ASIC) is customized using two non-adjacent via layers. An array of logic cells, each including a plurality of logic devices, are arranged in a plurality of non-customized base layers. A first routing grid, which includes a first non-customized metal routing layer, a customized via layer, and a second non-customized metal routing layer, is disposed on top of the plurality of non-customized layers. A second routing grid, which includes a third non-customized metal routing layer, another customized via layer, and a fourth non-customized metal routing layer, is disposed above the first routing grid. A non-customized via layer is disposed above the first routing grid and beneath the second routing grid. The routing grids and the non-customized via layer collectively facilitate routing connections to and from the logic cells. | 03-12-2009 |
| 20090095985 | Multi-layer electrode, cross point memory array and method of manufacturing the same - Provided may be a multi-layer electrode, a cross point resistive memory array and method of manufacturing the same. The array may include a plurality of first electrode lines arranged parallel to each other; a plurality of second electrode lines crossing the first electrode lines and arranged parallel to each other; and a first memory resistor at intersections between the first electrode lines and the second electrode lines, wherein at least one of the first electrode lines and the second electrode lines have a multi-layer structure including a first conductive layer and a second conductive layer formed of a noble metal. | 04-16-2009 |
| 20090114952 | Interconnect Components of a Semiconductor Device - Embodiments comprise an adjusted polysilicon gate pitch to metal wire pitch relationship to improve area scalars while increasing ACLV tolerance with a fixed polysilicon gate pitch. In some embodiments, the wire pitch for at least one metallization layer is adjusted to match the pitch for the polysilicon gate. In one embodiment, the next to the lowest metallization layer running in the same orientation as the polysilicon gate, utilized to access the input or output of the interconnected cell structures is relaxed to match the minimum contacted gate pitch and the metal is aligned above each polysilicon gate. In another embodiment, the polysilicon gate pitch may be relaxed to attain a smaller lowest common multiple with the wire pitch for an integrated circuit to reduce the minimum step off. | 05-07-2009 |
| 20090134432 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device comprises a semiconductor substrate; a cell array block formed on the semiconductor substrate and including plural stacked cell array layers each with a plurality of first lines, a plurality of second lines crossing the plurality of first lines, and memory cells connected at intersections of the first and second lines between both lines; and a plurality of via-holes extending in the stacked direction of the cell array layers to individually connect the first or second line in the each cell array layer to the semiconductor substrate. The via-holes are formed continuously through the plural cell array layers, and multiple via-holes having equal lower end positions and upper end positions are connected to the first or second lines indifferent cell array layers. | 05-28-2009 |
| 20090166682 | METHODS AND APPARATUS FOR FORMING MEMORY LINES AND VIAS IN THREE DIMENSIONAL MEMORY ARRAYS USING DUAL DAMASCENE PROCESS AND IMPRINT LITHOGRAPHY - The present invention provides systems, apparatus, and methods for forming three dimensional memory arrays using a multi-depth imprint lithography mask and a damascene process. An imprint lithography mask for manufacturing a memory layer in a three dimensional memory is described. The mask includes a translucent material formed with features for making an imprint in a transfer material to be used in a damascene process, the mask having a plurality of imprint depths. At least one imprint depth corresponds to trenches for forming memory lines and at least one depth corresponds to holes for forming vias. Numerous other aspects are disclosed. | 07-02-2009 |
| 20090166683 | FLEXIBLE LAYOUT FOR INTEGRATED MASK-PROGRAMMABLE LOGIC DEVICES AND MANUFACTURING PROCESS THEREOF - Integrated mask-programmable device, having a plurality of metal levels including a top metal level, a bottom metal level and a first intermediate metal level formed between the top and bottom metal levels, and a plurality of via levels arranged between the bottom and the first intermediate metal levels and between the first intermediate and the top metal levels and connecting each metal level to adjacent metal levels. The plurality of metal levels forms a first, a second and at least a third terminal, the top and bottom metal levels having at least two metal regions, and the first intermediate metal level having at least three metal regions. The first terminal is connected to third terminal or the second terminal is connected to the third terminal by modifying a single metal or via level. | 07-02-2009 |
| 20090278173 | MEMORY DEVICE INTERCONNECTS AND METHOD OF MANUFACTURING - An integrated circuit memory device, in one embodiment, includes a substrate having a plurality of bit lines. A first and second inter-level dielectric layer are successively disposed on the substrate. Each of a plurality of source lines and staggered bit line contacts extend through the first inter-level dielectric layer. Each of a plurality of source line vias and a plurality of staggered bit line vias extend through the second inter-level dielectric layer to each respective one of the plurality of source lines and the plurality of staggered bit line contacts. The source lines and staggered bit line contacts that extend through the first inter-level dielectric layer are formed together by a first set of fabrication processes. The source line vias and staggered bit line contacts that extend through the second inter-level dielectric layer are also formed together by a second set of fabrication processes. | 11-12-2009 |
| 20100019288 | Cell of Semiconductor Device Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks with Minimum End-to-End Spacing - A cell of a semiconductor device is disclosed to include a diffusion level including a plurality of diffusion regions separated by inactive regions. The cell also includes a gate electrode level including conductive features defined to extend in only a first parallel direction. Adjacent ones of the conductive features that share a common line of extent in the first parallel direction are fabricated from respective originating layout features that are separated from each other by an end-to-end spacing having a size that is substantially equal across the gate electrode level region and is minimized to an extent allowed by a semiconductor device manufacturing capability. The gate electrode level includes conductive features defined along at least four different virtual lines of extent in the first parallel direction. A width of the conductive features is less than a wavelength of light used in a photolithography process for their fabrication. | 01-28-2010 |
| 20100032725 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device comprises a semiconductor substrate; a cell array block formed on the semiconductor substrate and including plural stacked cell array layers each comprising a plurality of first lines, a plurality of second lines crossing the plurality of first lines, and memory cells connected at intersections of the first and second lines between both lines; and a plurality of contact plugs extending in the stack direction of the cell array layers to connect between the first lines, between the second lines, between the first or second line and the semiconductor substrate, or between the first or second line and another metal line, in the cell array layers. The first or second line in a certain one of the cell array layers has a contact connector making contact with both sides of the contact plug. | 02-11-2010 |
| 20100032726 | Semiconductor Device Portion Having Sub-193 Nanometers -Sized Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks with Minimum End-to-End Spacing and Having Corresponding Non-Symmetric Diffusion Regions - A semiconductor device includes a substrate portion including a plurality of diffusion regions defined in a non-symmetrical manner relative to a virtual bisecting line. A gate electrode level region above the substrate portion includes a number of conductive features that extend in only a first parallel direction. Adjacent conductive features that share a common line of extent in the first parallel direction are fabricated from respective originating layout features separated by an equal and minimal sized end-to-end spacing. Conductive features are defined along at least four different virtual lines of extent in the first parallel direction. A width of the conductive features within a photolithographic interaction radius is less than a wavelength of light of 193 nanometers as used in a photolithography process for their fabrication. The photolithographic interaction radius is five times the wavelength of light used in the photolithography process. | 02-11-2010 |
| 20100065891 | Compact Memory Arrays - Embodiments of the invention describe compact memory arrays. In one embodiment, the memory cell array includes first, second, and third gate lines disposed over a substrate, the second gate lines are disposed between the first and the third gate lines. The first, the second, and the third gate lines form adjacent gate lines of the memory cell array. The memory cell array further includes first metal lines disposed over the first gate lines, the first metal lines coupled to the first gate lines; second metal lines disposed over the second gate lines, the second metal lines coupled to the second gate lines; and third metal lines disposed over the third gate lines, the third metal lines coupled to the third gate lines. The first metal lines, the second metal lines and the third metal lines are disposed in different metallization levels. | 03-18-2010 |
| 20100155785 | HTO OFFSET SPACERS AND DIP OFF PROCESS TO DEFINE JUNCTION - Memory devices having an increased effective channel length and/or improved TPD characteristics, and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The memory cell contains a pair of first bit lines and a pair of second bit lines. The first and second bit lines can be formed by an implant process using first and second spacers that have different lateral lengths from each other. The spacers can be used to offset the implants, thereby controlling the lateral lengths of the bit lines. | 06-24-2010 |
| 20100187574 | Memory Cell For Modification of Revision Identifier In An Integrated Circuit Chip - A memory cell for reducing the cost and complexity of modifying a revision identifier (ID) or default register values associated with an integrated circuit (IC) chip, and a method for manufacturing the same. The cell, which may be termed a “Meta-Memory Cell” (MMCEL), is implemented on metal layers only and utilizes a dual parallel metal ladder structure that traverses and covers each metal and via layer from the bottom to the top of the metal layer structure of the chip. One of the metal ladders is connected to a power supply at the bottom metal layer, corresponding to a logic 1, and another metal ladder is connected to ground at the bottom metal layer, corresponding to a logic 0. The output of the MMCEL can thus be inverted at any metal or via layer and can be inverted as often as required. Significant cost savings are achieved because a revision ID or default register bits may be modified by altering only those metal layers where design changes are necessary. | 07-29-2010 |
| 20110108890 | Semiconductor Device with Dynamic Array Sections Defined and Placed According to Manufacturing Assurance Halos - An integrated circuit device includes a plurality of dynamic array sections, each of which includes three or more linear conductive segments formed within its gate electrode level in a parallel manner to extend lengthwise in a first direction. An adjoining pair of dynamic array sections are positioned to have co-located portions of outer peripheral boundary segments extending perpendicular to the first direction. Some of the three or more linear conductive segments within the gate electrode levels of the adjoining pair of dynamic array sections are co-aligned in the first direction and separated by an end-to-end spacing that spans the co-located portions of outer peripheral boundary segments of the adjoining pair of dynamic array sections. Each of these end-to-end spacings is sized to ensure that each gate electrode level manufacturing assurance halo portion of the first adjoining pair of dynamic array sections is devoid of the co-aligned linear conductive segments. | 05-12-2011 |
| 20110108891 | Semiconductor Device with Dynamic Array Sections Defined and Placed According to Manufacturing Assurance Halos - An integrated circuit device includes a plurality of dynamic array sections, each of which includes three or more linear conductive segments formed within its gate electrode level in a parallel manner to extend lengthwise in a first direction. An adjoining pair of dynamic array sections are positioned to have co-located portions of outer peripheral boundary segments extending in the first direction. At least one of the linear conductive segments within the gate electrode level of a given dynamic array section is a non-gate linear conductive segment that does not form a gate electrode of a transistor. The non-gate linear conductive segment of either of the adjoining pair of dynamic array sections spans the co-located portion of outer peripheral boundary segment toward the other of the adjoining pair of dynamic array sections, and is contained within gate electrode level manufacturing assurance halo portions of the adjoining pair of dynamic array sections. | 05-12-2011 |
| 20110147801 | THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a three-dimensional semiconductor device and a method of fabricating the same. The three-dimensional semiconductor device may include a mold structure for providing gap regions and an interconnection structure including a plurality of interconnection patterns disposed in the gap regions. The mold structure may include interlayer molds defining upper surfaces and lower surfaces of the interconnection patterns and sidewall molds defining sidewalls of the interconnection patterns below the interlayer molds. | 06-23-2011 |
| 20110156103 | Method and System to Reduce Area of Standard Cells - A signal routing grid. A first metal layer has wires running in a first direction. A second metal layer, spaced from and substantially parallel to the first metal layer, has wires running in a second direction different to the first direction, such that the wires of the first and second metal layers appear from above or below to form virtual intersections. Vias or contacts are coupled between the first and second metal layers and configured to route signals between the first and second metal layers. Pins are coupled to the first metal layer and configured to provide input signals or receive output signals from a standard cell, the pins being positioned along the wires in the first metal layer so as to be spaced from the virtual intersections. | 06-30-2011 |
| 20110175144 | Integrated Circuit Device Including Dynamic Array Section with Gate Level Having Linear Conductive Features on at Least Three Side-by-Side Lines and Uniform Line End Spacings - An integrated circuit device includes a dynamic array section that includes a gate electrode level region that has linear conductive features defined in accordance with a gate level virtual grate. Each of at least three consecutively positioned virtual lines of the gate level virtual grate has at least one linear conductive feature defined thereon. A first virtual line of the at least three virtual lines has two linear conductive segments defined thereon and separated by a first end-to-end spacing. A second virtual line of the at least three virtual lines has another two linear conductive segments defined thereon and separated by a second end-to-end spacing. A size of the first end-to-end spacing as measured along the first virtual line is substantially equal to a size of the second end-to-end spacing as measured along the second virtual line. | 07-21-2011 |
| 20110193136 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a structure of a semiconductor device that realizes an increase in a capacitor capacitance of a memory circuit to the maximum while inhibiting an increase in a contact resistance of a logic circuit, and a manufacture method thereof. When designating the number of layers of the local interconnect layers having wiring that makes up a logic circuit area as M and designating the number of layers of the local interconnect layers having wiring that makes up the memory circuit as N (M and N are natural numbers and satisfy M>N), capacitance elements are provided over the interconnect layers comprised of (M−N) layers or (M−N+1) layers. | 08-11-2011 |
| 20110198672 | Three dimensional structure memory - A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 μm in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques. | 08-18-2011 |
| 20110204420 | INTERCONNECTION STRUCTURE OF THREE-DIMENSIONAL SEMICONDUCTOR DEVICE - A three-dimensional semiconductor device includes stacked structures arranged two-dimensionally on a substrate, a first interconnection layer including first interconnections and disposed on the stacked structures, and a second interconnection layer including second interconnections and disposed on the first interconnection layer. Each of the stacked structures has a lower region including a plurality of stacked lower word lines, and an upper region including a plurality of stacked upper word lines disposed on the stack of lower word lines. Each of the first interconnections is connected to one of the lower word lines and each of the second interconnections is connected to one of the upper word lines. | 08-25-2011 |
| 20110204421 | THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a three dimensional semiconductor memory device and a method of fabricating the same. The method includes forming a stepwise structure by using mask patterns and a sacrificial mask pattern formed on the mask patterns as a consumable etch mask. | 08-25-2011 |
| 20110260218 | SEMICONDUCTOR DEVICE - An exemplary embodiment of the present invention is a semiconductor device having a regular layout region and an irregular layout region formed on one chip, including: a lower conductive layer; an interlayer insulating film formed on the lower conductive layer; an upper interconnect layer formed on the interlayer insulating film; and connection plugs disposed to electrically connect the lower conductive layer and the upper interconnect layer at a substantially shortest distance. In at least part of the regular layout region, the lower conductive layer and the upper interconnect layer are electrically connected to each other through at least two connection plugs and an intermediate connection layer for electrically connecting the at least two connection plugs, the at least two connection plugs being disposed at an immediately above position extending from immediately above the lower conductive layer and a shift position spaced apart from the immediately above position, respectively. | 10-27-2011 |
| 20110298014 | Cross-Point Memory Structures - Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over the memory element material and extending along a second horizontal direction that is orthogonal to the first horizontal direction. Some embodiments include methods of forming memory arrays. The methods may include forming a memory cell stack over a first electrode material, and then patterning the first electrode material and the memory cell stack into a first set of spaced lines extending along a first horizontal direction. Spaced lines of second electrode material may be formed over the first set of spaced lines, and may extend along a second horizontal direction that is orthogonal to the first horizontal direction. | 12-08-2011 |
| 20120025273 | ELECTROMIGRATION RESISTANT STANDARD CELL DEVICE - A standard cell semiconductor integrated circuit device design provides a standard cell semiconductor device that includes first standard cells and user-defined target standard cells which consume more power or include other operational characteristics that differ from the operational characteristics of the first standard cells. The standard cells are routed to ground and power wires using one power rail and the target cells are routed to the ground and power lines using the first power rail and a second power rail to alleviate electromigration in either of the power rails. The two power rails include an upper power rail and a lower power rail. An intermediate conductive layer may be disposed between the upper and lower power rails to provide for signal routing by lateral interconnection between cells. | 02-02-2012 |
| 20120061732 | INFORMATION RECORDING/REPRODUCING DEVICE - According to one embodiment, an information recording/reproducing device including a semiconductor substrate, a first interconnect layer on the semiconductor substrate, a first memory cell array layer on the first interconnect layer, and a second interconnect layer on the first memory cell array layer. The first memory cell array layer comprises an insulating layer having an alignment mark, and a stacked layer structure on the insulating layer and including a storage layer and an electrode layer. All of the layers in the stacked layer structure comprises a material with a permeability of visible light of 1% or more. | 03-15-2012 |
| 20120104463 | DEVICES AND MEMORY ARRAYS INCLUDING BIT LINES AND BIT LINE CONTACTS - Each of the first bit lines of a device has an upper surface and a lower surface, with the upper surface being more outwardly located over a semiconductor surface than the lower surface. A second bit line of the device has an upper surface and a lower surface, with the upper surface thereof being more outwardly located over the semiconductor surface than the lower surface. The upper surface of the second bit line is more outwardly located over the semiconductor surface than the upper surfaces of the first bit lines. The first bit lines are each adjacent to the second bit line and the second bit line is configured to be selectively coupled to a memory cell other than memory cells to which the first bit lines are configured to be selectively coupled. The second bit line does not overlap any of the first bit lines. | 05-03-2012 |
| 20120132964 | SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor array including a plurality of transistors each having a gate electrode extended in a first direction, the plurality of transistors being arranged in a second direction intersecting the first direction, and a pad electrode arranged in the first direction of the transistor array and electrically connected to source regions of the plurality of transistors. | 05-31-2012 |
| 20120153357 | CONTACT INTEGRATION FOR THREE-DIMENSIONAL STACKING SEMICONDUCTOR DEVICES - Briefly, in accordance with one or more embodiments, multilayer memory device, comprising a lower deck and an upper deck disposed on the lower deck, the decks comprising one or more memory cells coupled via one or more contacts. An isolation layer is disposed between the upper deck, and one or more contacts are formed between the upper deck and the lower deck to couple one or more of the contact lines of the upper deck with one or more contact lines of the lower deck. | 06-21-2012 |
| 20120205722 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - Example embodiments relate to a three-dimensional semiconductor memory device including an electrode structure on a substrate, the electrode structure including at least one conductive pattern on a lower electrode, and a semiconductor pattern extending through the electrode structure to the substrate. A vertical insulating layer may be between the semiconductor pattern and the electrode structure, and a lower insulating layer may be between the lower electrode and the substrate. The lower insulating layer may be between a bottom surface of the vertical insulating layer and a top surface of the substrate. Example embodiments related to methods for fabricating the foregoing three-dimensional semiconductor memory device. | 08-16-2012 |
| 20120235211 | Cross-Point Memory Structures - Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over the memory element material and extending along a second horizontal direction that is orthogonal to the first horizontal direction. Some embodiments include methods of forming memory arrays. The methods may include forming a memory cell stack over a first electrode material, and then patterning the first electrode material and the memory cell stack into a first set of spaced lines extending along a first horizontal direction. Spaced lines of second electrode material may be formed over the first set of spaced lines, and may extend along a second horizontal direction that is orthogonal to the first horizontal direction. | 09-20-2012 |
| 20120256235 | LAYOUT SCHEME AND METHOD FOR FORMING DEVICE CELLS IN SEMICONDUCTOR DEVICES - A method and layout for forming word line decoder devices and other devices having word line decoder cells provides for forming metal interconnect layers using non-DPL photolithography operations and provides for stitching distally disposed transistors using a lower or intermediate metal layer or a subjacent conductive material. The transistors may be disposed in or adjacent longitudinally arranged word line decoder or other cells and the conductive coupling using the metal or conductive material lowers gate resistance between transistors and avoids RC signal delays. | 10-11-2012 |
| 20120299065 | SEMICONDUCTOR DEVICE - There is provided a technique capable of reducing a layout area of a standard cell configuring a digital circuit even under a circumstance that a new layout rule introduced in accordance with microfabrication of a MISFET is provided. For example, a protruding wiring PL | 11-29-2012 |
| 20120319173 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, THREE-DIMENSIONAL SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME - A three-dimensional semiconductor device includes a semiconductor substrate, a plurality of conductive layers and insulating layers, and a plurality of contacts. The plurality of conductive layers and insulating layers are stacked alternately above the semiconductor substrate. The plurality of contacts extend in a stacking direction of the plurality of conductive layers and insulating layers. The plurality of conductive layers form a stepped portion having positions of ends of the plurality of conductive layers gradually shifted from an upper layer to a lower layer. The plurality of contacts are connected respectively to each of steps of the stepped portion. The stepped portion is formed such that, at least from an uppermost conductive layer to a certain conductive layer, the more upwardly the conductive layer is located, the broader a width of the step is. | 12-20-2012 |
| 20130037860 | 3D MEMORY ARRAY - A 3-D memory is provided. Each word line layer has word lines and gaps alternately arranged along a first direction. Gaps include first group and second group of gaps alternately arranged. A first bit line layer is on word line layers and has first bit lines along a second direction. A first conductive pillar array through word line layers connects the first bit line layer and includes first conductive pillars in first group of gaps. A first memory element is between a first conductive pillar and an adjacent word line. A second bit line layer is below word line layers and has second bit lines along the second direction. A second conductive pillar array through word line layers connects the second bit line layer and includes second conductive pillars in second group of gaps. A second memory element is between a second conductive pillar and an adjacent word line. | 02-14-2013 |
| 20130099289 | Compact Memory Arrays - Embodiments of the invention describe compact memory arrays. In one embodiment, the memory cell array includes first, second, and third gate lines disposed over a substrate, the second gate lines are disposed between the first and the third gate lines. The first, the second, and the third gate lines form adjacent gate lines of the memory cell array. The memory cell array further includes first metal lines disposed over the first gate lines, the first metal lines coupled to the first gate lines; second metal lines disposed over the second gate lines, the second metal lines coupled to the second gate lines; and third metal lines disposed over the third gate lines, the third metal lines coupled to the third gate lines. The first metal lines, the second metal lines and the third metal lines are disposed in different metallization levels. | 04-25-2013 |
| 20130207165 | Integrated Circuit Including Gate Electrode Conductive Structures With Different Extension Distances Beyond Contact - An integrated circuit includes four parallel positioned linear-shaped structures each including a gate electrode portion and an extension portion. Gate electrode portions of two of the four linear-shaped structures respectively form gate electrodes of first and second transistors of a first transistor type. Gate electrode portions of two of the four linear-shaped structures respectively form a gate electrodes of first and second transistors of a second transistor type. Four contacting structures are respectively connected to the extension portions of the four linear-shaped structures such that each extension portion has a respective contact-to-end distance. At least two of the contact-to-end distances are different. A fifth linear-shaped structure forms gate electrodes of transistors respectively positioned next to the first transistors of the first and second transistor types. A sixth linear-shaped structure forms gate electrodes of transistors respectively positioned next to the second transistors of the first and second transistor types. | 08-15-2013 |
| 20130234212 | ELECTROMIGRATION RESISTANT STANDARD CELL DEVICE - A standard cell semiconductor integrated circuit device design provides a standard cell semiconductor device that includes first standard cells and user-defined target standard cells which consume more power or include other operational characteristics that differ from the operational characteristics of the first standard cells. | 09-12-2013 |
| 20140097475 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH CORELESS SUBSTRATE AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming a first metal layer on a carrier; forming an insulation layer directly on the first metal layer; exposing a portion of the first metal layer for directly attaching to a die interconnect connecting to an integrated circuit; forming a second metal layer directly on the insulation layer opposite the side of the insulation layer exposed by removing the carrier; and forming a protective layer directly on the insulation layer and the second metal layer, the protective layer exposing a portion of the second metal layer for directly attaching an external interconnect. | 04-10-2014 |
| 20140117413 | PADS AND PIN-OUTS IN THREE DIMENSIONAL INTEGRATED CIRCUITS - A three dimensional semiconductor device, comprising: a substrate including a plurality of circuits; a plurality of pads, each pad coupled to a circuit; and a memory array positioned above or below the substrate and coupled to a circuit to program the memory array. | 05-01-2014 |
| 20140346571 | THREE DIMENSIONAL INTEGRATED CIRCUITS - A three-dimensional semiconductor device, comprising: a first module layer having a plurality of circuit blocks; and a second module layer positioned substantially above the first module layer, including a plurality of configuration circuits; and a third module layer positioned substantially above the second module layer, including a plurality of circuit blocks; wherein, the configuration circuits in the second module control a portion of the circuit blocks in the first and third module layers. | 11-27-2014 |
| 20150048425 | Gate array architecture with multiple programmable regions - An integrated circuit includes a gate array layer having a two-dimensional array of logic gates, each logic gate including multiple transistors. At least one upper template-based metal layer is coupled to the gate array layer and is configured to define at least one of a power distribution network, a clock network and a global signal network. A configuration of traces of the upper template-based metal layer is at least mainly predetermined prior to design of the integrated circuit. | 02-19-2015 |
| 20150115329 | Method and Apparatus for Repairing Monolithic Stacked Integrated Circuits - Provided is a monolithic stacked integrated circuit (IC). The IC includes a first layer over a substrate and a second layer over the first layer. The first layer includes a first plurality of circuit elements where a first portion of the first plurality of circuit elements has defects. The second layer includes a second plurality of circuit elements. The IC further includes interconnect elements coupling the first portion to a second portion of the second plurality of circuit elements for mitigating the defects. | 04-30-2015 |
| 20150364414 | Array Of Conductive Vias, Methods Of Forming A Memory Array, And Methods Of Forming Conductive Vias - A method of forming conductive vias comprises forming at least three parallel line constructions elevationally over a substrate. The line constructions individually comprise a dielectric top and dielectric sidewalls. A conductive line is formed elevationally over and angles relative to the line constructions. The conductive line comprises a longitudinally continuous portion and a plurality of conductive material extensions that individually extend elevationally inward between immediately adjacent of the line constructions. Etching is conducted elevationally through the longitudinally continuous portion and partially elevationally into the extensions at spaced locations along the conductive line to break-up the longitudinally continuous portion to form individual conductive vias extending elevationally between immediately adjacent of the line constructions. Methods of forming a memory array are also disclosed. Arrays of conductive vias independent of method of manufacture are also disclosed. | 12-17-2015 |
| 20160064322 | DESIGNED-BASED INTERCONNECT STRUCTURE IN SEMICONDUCTOR STRUCTURE - Semiconductor structures are provided. The semiconductor structure includes a plurality of gate structures extending in a first direction formed over a substrate and a contact formed adjacent to the gate structures over the substrate. The semiconductor structure further includes a plurality of metal layers formed over the gate structures. In addition, some of the metal layers include metal lines extending in the first direction, and some of the metal layers include metal lines extending in a second direction substantially perpendicular to the first direction. Furthermore, the gate structures follow the following equation: | 03-03-2016 |
| 20160064339 | METHOD FOR FABRICATION OF AN INTEGRATED CIRCUIT RENDERING A REVERSE ENGINEERING OF THE INTEGRATED CIRCUIT MORE DIFFICULT AND CORRESPONDING INTEGRATED CIRCUIT - An integrated circuit includes a substrate with several functional blocks formed thereon. At least two identical functional blocks are respectively disposed at two or more different locations on the integrated circuit. Electrically inactive dummy modules in the neighborhoods and/or inside of the functional blocks are provided, wherein at least two different electrically inactive dummy modules are includes in the respective neighborhoods and/or inside of the at least two identical functional blocks. | 03-03-2016 |
| 20160172297 | DESIGNED-BASED INTERCONNECT STRUCTURE IN SEMICONDUCTOR STRUCTURE | 06-16-2016 |
| 20170236750 | Method for Via Plating with Seed Layer | 08-17-2017 |
| 20180022881 | FUNCTIONAL FILM AND METHOD FOR PRODUCING FUNCTIONAL FILM | 01-25-2018 |
| 20190143645 | MAGNETIC ARTICLES | 05-16-2019 |
