Class / Patent application number | Description | Number of patent applications / Date published |
216071000 | Specific configuration of electrodes to generate the plasma | 41 |
20080237186 | PLASMA PROCESSING APPARATUS AND METHOD THEREOF - A blow-off part | 10-02-2008 |
20080237187 | METHOD AND APPARATUS FOR INDUCING DC VOLTAGE ON WAFER-FACING ELECTRODE - A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode. | 10-02-2008 |
20080283501 | Process for Manufacturing Micro-and Nano-Devices - A method of depositing or etching a micro- or nano-scale pattern on a work piece is disclosed, including the steps of: (a) placing the work piece in an electrochemical reactor in close proximity to a patterned tool; (b) connecting the work piece such that it is the anode if is to be etched or the cathode if it is to be deposited, and the patterned tool such that it is the counter electrode; (c) pumping electrolytic fluid necessary for the electrolytic operation of the cell formed between the two electrodes; and (d) applying a current across the electrodes to etch or deposit the work piece. | 11-20-2008 |
20090045168 | Surface Treater for Elongated Articles - A surface treater system for three dimensional articles, especially elongated articles such as wires, cables and the like, increases the surface tension of the articles and thereby can be used to clean, etch and improve the wettabliity of the surface for inks, dyes, adhesives and the like. The treated article is supported by one or more guides that guide it through a long, narrow treatment zone. Two or more elongated electrodes are arranged in the treater to ionize working media within the treatment zone. The working media can be diffused and injected evenly along the entire length of the treatment zone to ensure consistent treatment along a long length of the treated article. An elongated barrier member can be provided to contain the working media in the treatment zone. Alternatively, working media can be injected and diffused from multiple, preferably opposing, sides of the treatment zone to further contain and disperse the working media, and provide essentially full-periphery surface treatment. | 02-19-2009 |
20090078677 | INTEGRATED STEERABILITY ARRAY ARRANGEMENT FOR MINIMIZING NON-UNIFORMITY - An integrated steerability array arrangement for managing plasma uniformity within a plasma processing environment to facilitate processing of a substrate is provided. The arrangement includes an array of electrical elements. The arrangement also includes an array of gas injectors, wherein the array of electrical elements and the array of gas injectors are arranged to create a plurality of plasma regions, each plasma region of the plurality of plasma regions being substantially similar. The arrangement further includes an array of pumps, wherein individual one of the array of pumps being interspersed among the array of electrical elements and the array of gas injectors. The array of pumps is configured to facilitate local removal of gas exhaust to maintain a uniform plasma region within the plasma processing environment. | 03-26-2009 |
20090078678 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode. | 03-26-2009 |
20090134121 | PLASMA PROCESSING APPARATUS AND METHOD - There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma. | 05-28-2009 |
20090200269 | PROTECTIVE COATING FOR A PLASMA PROCESSING CHAMBER PART AND A METHOD OF USE - A flexible polymer or elastomer coated RF return strap to be used in a plasma chamber to protect the RF strap from plasma generated radicals such as fluorine and oxygen radicals, and a method of processing a semiconductor substrate with reduced particle contamination in a plasma processing apparatus. The coated RF strap minimizes particle generation and exhibits lower erosion rates than an uncoated base component. Such a coated member having a flexible coating on a conductive flexible base component provides an RF ground return configured to allow movement of one or more electrodes in an adjustable gap capacitively coupled plasma reactor chamber. | 08-13-2009 |
20090206058 | PLASMA PROCESSING APPARATUS AND METHOD, AND STORAGE MEDIUM - A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases. | 08-20-2009 |
20090242516 | PLASMA ETCHING METHOD AND COMPUTER READABLE STORAGE MEDIUM - A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma. | 10-01-2009 |
20100025372 | PLASMA PROCESSING METHOD AND APPARATUS - In a plasma processing method, a conductor of an electrostatic chuck (ESC) and an electrode are electrically grounded prior to starting the plasma processing. A DC voltage with a polarity is applied to the conductor at a first time point after loading a substrate on the electrode. Then, the electrode is switched from an electrically grounded state to an electrically floating state at a second time point. A RF power is then applied to the electrode at a third time point. The application of the RF power is stopped at a fourth time point after a specified time has lapsed from the third time point. Then, the electrode is switched from the electrically floating state to the electrically grounded state at a fifth time point. Thereafter, the application of the DC voltage is stopped and the conductor is restored to a ground potential at a sixth time point. | 02-04-2010 |
20100059478 | APPARATUS FOR PLASMA PROCESSING AND METHOD FOR PLASMA PROCESSING - There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate. | 03-11-2010 |
20100116791 | NOVEL PLASMA SYSTEM FOR IMPROVED PROCESS CAPABILITY - A plasma system for substrate processing comprising, a conducting electrode (b, bb) on which one or more substrates (d) can be held; a second conducting electrode (a) placed adjacent but separated from the substrate holding electrode on the side away from the side where the substrates are held; and a gas mixture distribution shower head (e) placed away from the conducting electrode on the side where the substrates are held for supplying the gas mixture (f) needed for processing the substrates in a uniform manner; such that a plasma configuration initiated and established, between the conducting electrode holding the substrates and the second conducting electrode envelops the electrode holding the substrate, is kept away from the shower head activating and distributing the gas mixture through orifices (ee) in the shower head, there by providing advantages of uniformity, yield and reliability of process. | 05-13-2010 |
20100176086 | PLASMA PROCESSING APPARATUS AND METHOD OF CONTROLLING DISTRIBUTION OF A PLASMA THEREIN - A plasma processing apparatus performing a plasma processing to a substrate includes a processing vessel having a vacuum exhaustible processing chamber; a mounting table serving as a lower electrode for mounting thereon the substrate in the processing chamber; a circular ring member arranged to surround a periphery of the substrate whose radial one end portion is supported by the mounting table; an upper electrode arranged above the lower electrode to face same; and a power feed for supplying the mounting table with a high frequency power. The plasma processing apparatus further includes a first intermediate electrical conductor supporting a middle portion of the circular ring member; and a first movable electrical conductor which is selectively electrically connected or disconnected to the power feed; and a second intermediate electrical conductor supporting a radial opposite end portion of the circular ring member. | 07-15-2010 |
20100243609 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Uniformity of plasma density distribution and process characteristics is improved by greatly improving performance and the degree of freedom for controlling the plasma density distribution. A capacitively coupled plasma processing apparatus includes a plasma density distribution controller, installed in a chamber lower room, for controlling plasma density distribution on a susceptor. The plasma density distribution controller includes a conductive plate (first conductor) which is placed under a rear surface of the susceptor at a certain position to face the susceptor and a conductive rod (second conductor) which supports the conductive plate upward and is electrically grounded. An upper end (first connecting portion) of the conductive rod is fixed to a certain portion of a bottom surface of the conductive plate, and a lower end (second connecting portion) of the conductive rod is fixed to or is in contact with a bottom wall of a chamber. | 09-30-2010 |
20110006040 | Methods for Plasma Processing - Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider. | 01-13-2011 |
20110031217 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a processing chamber that accommodates a substrate therein; a lower electrode positioned within the processing chamber and serving as a mounting table; an upper electrode positioned to face the lower electrode within the processing chamber; a first high frequency power supply that applies high frequency power for plasma generation of a first frequency to the lower electrode or the upper electrode; a second high frequency power supply that applies high frequency power for ion attraction of a second frequency lower than the first frequency to the lower electrode; at least one bias distribution control electrode positioned at least in a peripheral portion above the lower electrode; and at least one bias distribution control power supply that applies an AC voltage or a square wave voltage of a third frequency lower than the second frequency to the at least one bias distribution control electrode. | 02-10-2011 |
20110049101 | ARRANGEMENTS FOR MANIPULATING PLASMA CONFINEMENT WITHIN A PLASMA PROCESSING SYSTEM AND METHODS THEREOF - An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge. | 03-03-2011 |
20110049102 | PLASMA TREATMENT APPARATUS AND METHOD FOR PLASMA-ASSISTED TREATMENT OF SUBSTRATES - A remote plasma source comprises a first plate-like electrode ( | 03-03-2011 |
20110089142 | METHOD AND APPARATUS FOR PLASMA SURFACE TREATMENT OF MOVING SUBSTRATE - Method and apparatus for treatment of a substrate surface ( | 04-21-2011 |
20110240599 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing apparatus for generating a plasma in a plasma processing space in a processing chamber and plasma-processing a target object includes a plasma-exciting high frequency power supply for applying a plasma-exciting high frequency power. Further, the plasma processing apparatus includes at least one of a potential-controlling high frequency power supply for applying a potential-controlling high frequency power having a frequency lower than that of the plasma-exciting high frequency power and a DC power supply for applying a DC voltage; and a mounting table for mounting thereon a target object. Furthermore, the plasma processing apparatus includes an auxiliary electrode, provided at a position outer side of the target object mounted on the mounting table while facing the mounting table, connected to at least one of the potential-controlling high frequency power supply and the DC power supply. | 10-06-2011 |
20110253674 | Method and Chamber for Inductively Coupled Plasma Processing for Cylinderical Material With Three-Dimensional Surface - The present invention relates to an inductively coupled plasma processing chamber and method for a cylindrical workpiece with a three-dimensional profile, and more particularly to an inductively coupled plasma processing reactor and method for a cylindrical workpiece with a three-dimensional profile, in which the workpiece serving as an internal RF antenna is connected to an RF power source through an impedance matching network at one end, and a terminating capacitor at another end so as to achieve low plasma contamination, confine dense uniform plasma in the substrate vicinity and suppress secondary electrons emitted from the substrate, and a plasma process can be applied to a 3-D linear semiconductor device, a metal, glass, ceramic or polymer substrate having planar or 3-D structured micro or nano patterns, and the like. | 10-20-2011 |
20110303643 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - The substrate processing apparatus includes a susceptor, which is connected to a high frequency power source and on which a substrate is held, an upper electrode plate facing the susceptor, and a processing space PS formed between the susceptor and the upper electrode, to perform a plasma etching process on the wafer by using plasma. The substrate processing apparatus includes a dielectric plate which covers a surface of the upper electrode plate, the surface of which faces the processing space PS, the upper electrode plate is divided into an inner electrode facing a center portion of the wafer and an outer electrode facing a circumferential portion of the wafer, the inner electrode and the outer electrode are electrically insulated from each other, and a second variable DC power source applies a positive DC voltage to the inner electrode and the outer electrode is electrically grounded. | 12-15-2011 |
20120012557 | METHOD FOR MAKING NANOSTRUCTURED SURFACES - A continuous method for making a nanostructured surface comprises (a) placing a substrate comprising a nanoscale mask on a cylindrical electrode in a vacuum vessel, (b) introducing etchant gas to the vessel at a predetermined pressure, (c) generating plasma between the cylindrical electrode and a counter-electrode, (d) rotating the cylindrical electrode to translate the substrate, and (e) anisotropically etching a surface of the substrate to provide anisotropic nanoscale features on the surface. | 01-19-2012 |
20120024819 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - According to one embodiment, a plasma processing apparatus includes a first electrode, a second electrode, a dielectric member, and a control unit. Plasma is generated between the first electrode and the second electrode. The dielectric member is provided between the first electrode and the second electrode. The control unit is configured to change relative dielectric constant of the dielectric member in a plane crossing a first direction from the first electrode to the second electrode. | 02-02-2012 |
20120080408 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode. | 04-05-2012 |
20120187086 | PLASMA GENERATION SYSTEM AND PLASMA GENERATION METHOD - A plasma generation system and related method for generating plasma in a cavity of a narrow tube, the system including: a first electrode including a conductive member covered with an insulator or dielectric, the first electrode being inserted into the cavity of the narrow tube to generate the plasma; a power supply to apply an alternating voltage or pulse voltage to the first electrode; and a second electrode located outside the narrow tube and connected to the power supply, the power supply applying the alternating voltage or pulse voltage between the first electrode and the second electrode, wherein the conductive member is made of a wire, a portion of the narrow tube is provided between the first electrode and the second electrode, and the second electrode is arranged and shaped so that a discharge is unevenly performed in a circumferential direction of the first electrode. | 07-26-2012 |
20120228263 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - In one embodiment, a substrate processing apparatus, includes: a chamber; a first electrode disposed in the chamber; a second electrode disposed in the chamber to face the first electrode, and to hold a substrate; an RF power supply to apply an RF voltage with a frequency of 50 MHz or more to the second electrode; and a pulse power supply to repeatedly apply a voltage waveform including a negative voltage pulse and a positive voltage pulse of which delay time from the negative voltage pulse is 50 nano-seconds or less to the second electrode while superposing on the RF voltage. | 09-13-2012 |
20120248067 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM - Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed. | 10-04-2012 |
20130119020 | System, Method and Apparatus of a Wedge-Shaped Parallel Plate Plasma Reactor for Substrate Processing - A plasma process chamber includes a top electrode, a bottom electrode disposed opposite the top electrode, the bottom electrode capable of supporting a substrate. The plasma process chamber also includes a plasma containment structure defining a plasma containment region, the plasma containment region being less than an entire surface of the substrate. The plasma containment structure rotates relative to the substrate and wherein the plasma containment region includes a center point of the substrate throughout the rotation of the plasma containment structure relative to the substrate. The plasma containment structure includes multiple gaps. A vacuum source is coupled to the gaps in the plasma containment structure. A method of processing a substrate is also described. | 05-16-2013 |
20130186859 | Asymmetrical RF Drive for Electrode of Plasma Chamber - RF power is coupled to one or more RF drive points ( | 07-25-2013 |
20130213935 | SYNCHRONIZED RADIO FREQUENCY PULSING FOR PLASMA ETCHING - Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma. | 08-22-2013 |
20140034612 | METHOD OF DIFFERENTIAL COUNTER ELECTRODE TUNING IN AN RF PLASMA REACTOR - A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy. | 02-06-2014 |
20140251956 | ETCHING APPARATUS AND ETCHING METHOD - An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate. | 09-11-2014 |
20140263182 | DC PULSE ETCHER - A method of selectively activating a chemical process using a DC pulse etcher. A processing chamber includes a substrate therein for chemical processing. The method includes coupling energy into a process gas within the processing chamber so as to produce a plasma containing positive ions. A pulsed DC bias is applied to the substrate, which is positioned on a substrate support within the processing chamber. Periodically, the substrate is biased between first and second bias levels, wherein the first bias level is more negative than the second bias level. When the substrate is biased to the first bias level, mono-energetic positive ions are attracted from plasma toward the substrate, the mono-energetic positive ions being selective so as to enhance a selected chemical etch process. | 09-18-2014 |
20140305905 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - At a time point T | 10-16-2014 |
20150048052 | PLASMA PROCESSING APPARATUS - The present invention relates to an apparatus ( | 02-19-2015 |
20160053376 | PLASMA UNIFORMITY CONTROL BY ARRAYS OF UNIT CELL PLASMAS - The present invention provides an apparatus having a plasma profile control plate disposed in a plasma processing chamber so as to locally alter plasma density to provide uniform plasma distribution across a substrate surface during processing. In one embodiment, a process kit includes a plate configured to be disposed in a plasma processing chamber, a plurality of apertures formed therethrough, the apertures configured to permit processing gases to flow through the plate, and an array of unit cells including at least one aperture formed in the plate, wherein each unit cell has an electrode assembly individually controllable relative to electrode assemblies disposed in at least two other unit cells. | 02-25-2016 |
20160056022 | Methods for Processing Substrates Using a Movable Plasma Confinement Structure - A method of processing a substrate is provided. The method includes loading a substrate in a processing chamber. The substrate is supported on a bottom electrode and the processing chamber includes a top electrode opposing the bottom electrode. The method includes placing a plasma containment structure over a selected portion of the surface of the substrate to define a plasma containment region of the selected portion of the surface of the substrate. Then, injecting at least one process gas into the plasma containment region and biasing the top electrode and the bottom electrode. The method further includes exhausting process byproducts from the plasma containment region and moving the plasma containment region relative to the substrate to selectively passes over the entire surface of the substrate. | 02-25-2016 |
20160126070 | Arrangements for Manipulating Plasma Confinement Within a Plasma Processing System and Methods Thereof - Methods for controlling bevel etch rate of a substrate during plasma processing within a processing chamber includes securing the substrate on a lower electrode within the processing chamber. A power source is provided. A gas mixture is flowed into the processing chamber. A first match arrangement coupled to an upper electrode is adjusted to control current flowing through the upper electrode to change the upper electrode from a grounded state to a floating state. A second match arrangement coupled to a top ring electrode is adjusted to control current flowing through the top ring electrode so as to control plasma formed above a top edge of the substrate. An extension of the upper electrode is lowered during plasma processing so as to minimize a gap between the extension of the upper electrode and the substrate received on the lower electrode, such that the gap is incapable of supporting plasma formed in the processing chamber. | 05-05-2016 |
20170236689 | PARTICLE GENERATION SUPPRESOR BY DC BIAS MODULATION | 08-17-2017 |