| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 204192350 | Etching specified material | 9 |
| 20100051448 | METHOD AND INSTALLATION FOR THE VACUUM COLOURING OF A METAL STRIP BY MEANS OF MAGNETRON SPUTTERING - A vacuum process for etching a metal strip running over a backing roll facing a counterelectrode by magnetron sputtering, and a vacuum chamber etching installation implementing the process. A plasma is created in a gas close to the metal strip so as to generate radicals and/or ions that act on the strip, and at least one closed magnetic circuit, the width of which is approximately equal to that of the metal strip, is selected from a series of at least two closed magnetic circuits of different and fixed widths, then the selected magnetic circuit is positioned so as to face the metal strip, and then the etching of the moving metal strip is carried out. | 03-04-2010 |
| 20100084263 | Method for producing tight pitched coil with reduced processing steps - Methods for fabricating thin film magnetic head coil structures are disclosed. The methods disclose deposition of a first thick seed layer, followed by deposition of an ultra-thin second seed layer. Coil structures having sub-micron pitch and high aspect ratios are deposited on the second ultra-thin seed layer, which is removed from between the coil windings via an isotropic etch process such as wet etching or RIE. Subsequent to selective removal of the ultra-thin second seed layer, the first thick seed layer is utilized to deposit pole and backgap structures, eliminating the need to deposit (and remove) a subsequent seed layer on the coil structure. | 04-08-2010 |
| 20100206720 | METHOD OF PRODUCING INORGANIC NANOPARTICLES - A method of producing inorganic nanoparticles includes: (a) providing a layered structure including a substrate and an inorganic layer; (b) disposing the layered structure in a vacuum chamber, vacuuming the vacuum chamber, and introducing a gas into the vacuum chamber; and (c) applying microwave energy to the gas to produce a microwave plasma of the gas within the vacuum chamber so that the inorganic layer is acted by the microwave plasma and formed into a plurality of inorganic nanoparticles on the substrate. A system for producing the nanoparticles is also disclosed. | 08-19-2010 |
| 20130248358 | IN-SITU CONDITIONING FOR VACUUM PROCESSING OF POLYMER SUBSTRATES - An etching chamber is equipped with an actively-cooled element preferentially adsorbs volatile compounds that are evolved from a polymeric layer of a wafer during etching, which compounds will act as contaminants if re-deposited on the wafer, for example on exposed metal contact portions where they may interfere with subsequent deposition of metal contact layers. In desirable embodiments, a getter sublimation pump is also provided in the etching chamber as a source of getter material. Methods of etching in such a chamber are also disclosed. | 09-26-2013 |
| 20140061033 | SYSTEM AND METHOD FOR DIFFERENTIAL ETCHING - A method according to one embodiment includes placing a substrate in a chamber; and plasma sputtering the substrate in a presence of a non-zero pressure of a vapor, wherein the vapor at the non-zero pressure is effective to diminish an etch rate of a first material of the substrate. A plasma sputtering apparatus according to one embodiment includes a chamber; a reservoir in the chamber for releasing a vapor at an established rate; a mount for a substrate; and a plasma source. | 03-06-2014 |
| 20140262755 | UV-ASSISTED REACTIVE ION ETCH FOR COPPER - In some embodiments, a plasma etching apparatus is provided for etching copper that includes (1) a chamber body having a process chamber adapted to receive a substrate; (2) an RF source coupled to an RF electrode; (3) a pedestal located in the processing chamber and adapted to support a substrate; and (4) a UV source configured to delivery UV light to the processing chamber during at least a portion of an etch process performed within the plasma etching apparatus. Numerous other aspects are provided. | 09-18-2014 |
| 204192360 | Organic | 1 |
| 20150075973 | Pre-Cleaning a Semiconductor Structure - The invention relates to a method of pre-cleaning a semiconductor structure and to associated modular semiconductor process tools. The method includes the steps of: (i) providing a semiconductor structure having an exposed dielectric layer of an organic dielectric material, wherein the dielectric layer has one or more features formed therein which expose one or more electrically conductive structures to be pre-cleaned, in which the electrically conductive structures each include a metal layer, optionally with a barrier layer formed thereon, and the surface area of the exposed dielectric layer is greater than the surface area of the electrically conductive structures exposed by the dielectric layer; and (ii) pre-cleaning the semiconductor structure by performing an Ar/H2 sputter etch to remove material from the exposed electrically conductive structures and to remove organic dielectric material from the exposed dielectric layer. | 03-19-2015 |
| 204192370 | Silicon containing | 2 |
| 20110220492 | SURFACE PLANARIZATION METHOD - Disclosed is a surface planarization method capable of planarizing the surface of a substrate while maintaining the film thickness of a polysilicon layer. A wafer formed with a polysilicon layer on the surface thereof is loaded on a susceptor of a chamber of a substrate processing apparatus, the pressure in the chamber is set to any one of 100 mTorr or more and 800 mTorr or less, and the flow ratio of argon gas in a mixed gas of oxygen gas and argon gas is set to any one of 50% or more and 95% or less, plasma is generated by exciting the mixed gas with a high-frequency power having a frequency set to any one of 13 MHz or more and 100 MHz or less, and the surface of the wafer is sputtered by positive ions of oxygen or argon in the generated plasma. | 09-15-2011 |
| 20150083582 | ION TO NEUTRAL CONTROL FOR WAFER PROCESSING WITH DUAL PLASMA SOURCE REACTOR - The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material. | 03-26-2015 |
