| Entries |
| Document | Title | Date |
|---|
| 20080271991 | Apparatus and Method for Supercritical Fluid Removal or Deposition Processes - A continuous-flow supercritical fluid (SCF) apparatus and method for the deposition of thin films onto microelectronic devices or the removal of unwanted layers, particles and/or residues from microelectronic devices having same thereon. The SCF apparatus preferably includes a dynamic mixer to ensure homogeneous mixing of the SCF and other chemical components. | 11-06-2008 |
| 20090145747 | METHOD AND INSTALLATION FOR THE VACUUM COLOURING OF A METAL STRIP BY MEANS OF MAGNETRON SPUTTERING - A magnetron sputtering method for vacuum coloring a metal strip passing above at least one conductive counter electrode in a vacuum chamber. The method creates a plasma in a gas close to the metal strip, such as to generate radicals and/or ions that act on the strip, a magnetic confinement circuit being positioned above the strip. The counter electrode includes a mobile surface that can move in rotation and/or translation in relation to the metal strip, the surface being moved during the coloring process and being continuously cleaned by a cleaning device that is obscured from the plasma before being exposed once again to the plasma. A coloring installation can implement the method. | 06-11-2009 |
| 20090229972 | METHOD AND APPARATUS FOR PRODUCING A FEATURE HAVING A SURFACE ROUGHNESS IN A SUBSTRATE - An apparatus for producing features having a surface roughness in a substrate includes, according to one embodiment, a conductive first electrode disposed in opposition to a conductive second electrode, where the first and second electrodes are spaced apart from each other by a distance adapted for generating a microplasma therebetween. The second electrode is a substrate, and the first electrode and the substrate are configured for relative motion in at least two opposing directions. A feature comprising a surface roughness of greater than about 10 nm is formed in the substrate when the microplasma is generated. Preferably the feature has a width of about 300 nm or less. A plurality of the features (e.g., an ordered array of features) may be produced in the substrate, if desired. The substrate may be a silver-coated glass substrate used for surface-enhanced Raman scattering (SERS) analysis of biochemical molecules. | 09-17-2009 |
| 20090266705 | METHOD OF MANUFACTURING VERTICAL MAGNETIC HEAD - The method of manufacturing a vertical magnetic head comprises the steps of: forming a resist pattern including a concave section on a wafer substrate; laminating a plurality of films in the concave section until forming a prescribed multilayer structure of the main magnetic pole; and removing the resist pattern. Inner faces of the concave section are perpendicular to a surface of the wafer substrate. The laminating step includes the sub-steps of: (a) performing a sputtering process, in which particles are perpendicularly sputtered with respect to the surface of the wafer substrate, a plurality of times so as to laminate a plurality of sputtered films in the concave section; and (b) removing the sputtered films, which have been stuck on the resist pattern in the sub-step (a), from the resist pattern. The sub-steps (a) and (b) are repeated until the prescribed multilayer structure is formed. | 10-29-2009 |
| 20090314635 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND ORGANIC ELECTRON DEVICE - An organic film and a metal electrode (a cathode film) are formed on an indium tin oxide (ITO) of a substrate. The plasma processing apparatus supplies at least one of a predetermined processing gas for chemically reacting with the organic film and a predetermined inert gas for sputtering the organic film from a gas supply source into a processing container, wherein the metal electrode is used as a mask. The plasma processing gas also supplies microwaves from a microwave generator as energy for exciting the at least one of the predetermined processing gas and the predetermined inert gas. The plasma processing apparatus generates plasma from the at least one of the predetermined processing gas and the predetermined inert gas supplied to the processing container by using electric field energy of the microwaves, and etches the organic film by using the generated plasma. | 12-24-2009 |
| 20100006427 | REACTOR FOR CARRYING OUT AN ETCHING METHOD FOR A STACK OF MASKED WAFERS AND AN ETCHING METHOD - A reactor for carrying out an etching method for a stack of masked wafers, using an etching gas, preferably chlorotrifluoride (ClF | 01-14-2010 |
| 20100025231 | Method for cleaning optical element of EUV light source device and optical element cleaning device - A method for cleaning an optical element of an extreme ultraviolet light source device for removing, from the optical element in a chamber, scattered matter generated together with extreme ultraviolet light by plasma formed through laser beam excitation of a target in the chamber, the method which comprises: making the scattered matter generated by the plasma no larger than nanosize by using solid tin as the target and using a CO | 02-04-2010 |
| 20100187101 | METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - In a semiconductor device and a method of manufacturing the semiconductor device, lower electrodes having cylindrical shapes are provided to be arranged repeatedly on a substrate. Upper surfaces of the lower electrodes are flat so that the lower electrodes have uniform heights. Supporting structures are provided between the lower electrodes to support the lower electrode, the supporting structure partially contacting outer surfaces of sidewalls of the lower electrodes that are arranged in a line. A dielectric layer is formed on surfaces of the lower electrodes and the supporting structures. An upper electrode is provided on the dielectric layer. The semiconductor device includes a capacitor having an improved capacitance. Further, the capacitor includes the support structure between the lower electrodes to prevent the adjacent lower electrodes from being short each other. | 07-29-2010 |
| 20100230275 | METHOD AND ARRANGEMENT FOR REDUNDANT ANODE SPUTTERING HAVING A DUAL ANODE ARRANGEMENT - In a method in which two anodes are operated alternately opposite each other as plasma discharge anodes and as cathodes for self-cleaning, and the cathodes of the plasma discharge are recurrently briefly reversed in polarity, and an arrangement comprising a cathode and a first and a second anode supplied with voltage by an H-bridge circuit, pole reversal of cathode voltage is effected by a pulse current supply, at least one anode is maintained at positive potential at all times and the other anode intermittently at negative potential during an etching time, and the H-bridge circuit is operationally connected to the pulse current supply, such that at least one anode is at positive potential at all times. | 09-16-2010 |
| 20100243430 | Apparatus and method for magnetic field assisted electrochemical discharge machining - In an apparatus and method for magnetic field assisted electrochemical discharge machining (ECDM), the magneto hydrodynamic (MHD) effect is utilized to improve the thickness of bubble film and the electrolyte circulation so as to enhance the machining accuracy and efficiency. Since charged ions in a magnetic field are induced by Lorenz force to move, and the electrolysis bubbles generated in the ECDM process are suffused with electrification ions on their surfaces, the electrolysis bubbles can be forced to move in the direction of the magnetic field without the need of mechanical disturbance. The present invention can be widely applied in the micro-machining of non-conductive brittle materials of different dimensions and shapes, comprising the forming of microchannels and microholes on a biochip, and in the micro-opto-electro-mechanical system (MOEMS) and various kinds of micro-machining fields. The machined surface is smooth and does not require a second time machining. | 09-30-2010 |
| 20130087448 | APPARATUS FOR MANUFACTURING TEMPLATE AND METHOD FOR MANUFACTURING TEMPLATE - According to one embodiment, an apparatus for manufacturing a template includes a vacuum chamber, an electrode and an adjustor. The vacuum chamber includes an inlet and an exhaust port of a reactive gas. The vacuum chamber is capable of maintaining an atmosphere depressurized below atmospheric pressure. The electrode is provided in an interior of the vacuum chamber. A high frequency voltage is applied to the electrode. A substrate is placed on the electrode. The substrate has a back surface on a side of the electrode. A recess is provided in the back surface. The adjustor is inserted into the recess. The adjustor is insulative. | 04-11-2013 |
| 20140061031 | PROCESSING METHOD UTILIZING CLUSTER - A processing method having excellent processing performance at a low flow rate is provided. A method for processing a surface of a sample uses reactive clusters produced by adiabatic expansion of a gas mixture ejected from a nozzle into a vacuum processing chamber. The gas mixture contains a reactive gas chlorine trifluoride, a first inert gas argon, and a second inert gas xenon. The gas mixture in an inlet of the nozzle has a pressure of 0.4 MPa (abs) or more. The reactive gas constitutes 3% by volume or more and 10% by volume or less. The first inert gas constitutes 40% by volume or more and 94% by volume or less. The second inert gas constitutes 3% by volume or more and 50% by volume or less of the gas mixture. | 03-06-2014 |
| 20150060265 | DUAL DISCHARGE MODES OPERATION FOR REMOTE PLASMA - Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region. | 03-05-2015 |
| 20150096882 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus | 04-09-2015 |
| 20160086775 | APPARATUS AND METHOD FOR DEPOSITING ELECTRONICALLY CONDUCTIVE PASTING MATERIAL - A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing. | 03-24-2016 |
| 20160122880 | METHOD AND DEVICE FOR FORMING PROTRUSION BY MASKING ON SURFACE OF BASIC MATERIAL - A method for forming a protrusion by masking includes a mask formation step for forming a mask layer on a base material; an etching step for etching an area in which a mask is not formed on the base material, and a mask removal step for removing the mask layer. The mask formation step includes a step for forming at least one small mask, and a step for forming at least one big mask. | 05-05-2016 |
