| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 204192260 | Optical or photoactive | 53 |
| 20080217163 | MANUFACTURING METHOD FOR A FAR-INFRARED SUBSTRATE - A manufacturing method for a far-infrared (FIR) substrate is provided. The manufacturing method includes steps of providing a substrate and sputtering a FIR emission material onto at least one surface of the substrate to form a thin film. | 09-11-2008 |
| 20090127101 | METHODS AND APPARATUS FOR SPUTTERING DEPOSITION USING DIRECT CURRENT - An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes. | 05-21-2009 |
| 20090218215 | LAMINATE FOR FORMING A SUBSTRATE WITH WIRES, SUBSTRATE WITH WIRES AND METHODS FOR PRODUCING THEM - A laminate for forming a substrate with wires in which a silver type material is used for a conductor layer and the layer is covered with a conductive protection layer for protection, the laminate for forming a substrate with wires exhibiting an extremely low contact resistance between the conductive protection layer and a cathode superposed thereon, is presented. | 09-03-2009 |
| 20100059364 | FABRICATION METHOD FOR ORGANIC ELECTROLUMINESCENT DISPLAY WITH REFLECTION-REDUCING PROPERTIES - An organic electroluminescent device and method for fabricating the same are provided. The organic electroluminescent device comprises an anode. An organic luminescent layer is formed over the anode. A partially light-transmitting layer is formed over the organic luminescent layer. A protection layer is formed over the partially light-transmitting layer. A reflection-reducing layer is formed over the protection layer. A cathode is formed over the reflection-reducing layer. | 03-11-2010 |
| 20100084261 | METHOD FOR FABRICATING POLYMERIC WAVELENGTH FILTER - The present invention discloses a method for fabricating polymeric wavelength filter, which method for forming gratings patterns on the UV polymer involves three processing steps. First, a gratings pattern is holographically exposed using a two-beam interference pattern on a positive photo-resister film. A 20-nm-thick nickel thin film is then sputtered onto the positive photo-resister film to form a nickel mold. This nickel mold on the photo-resister film then can be subsequently used to transfer the final gratings pattern onto a UV cure epoxy polymer. Whereby, a polymer film can be spun coated on the cure epoxy substrate so as to simplify the fabrication process for obtaining a polymer wavelength filter with good aspect ratio of gratings pattern. | 04-08-2010 |
| 20100187099 | WRITE-ONCE OPTICAL RECORDING MEDIUM AND PROCESS FOR MANUFACTURING THE SAME - A write-once optical recording medium includes an inorganic recording layer and a protective layer provided on at least one surface of the inorganic recording layer. This protective layer contains indium oxide and tin oxide as main components. | 07-29-2010 |
| 20100193353 | SEALING TECHNIQUE FOR DECREASING THE TIME IT TAKES TO HERMETICALLY SEAL A DEVICE AND THE RESULTING HERMETICALLY SEALED DEVICE - A sealing method for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device (e.g., a hermetically sealed OLED device) are described herein. The sealing method includes the steps of: (1) cooling an un-encapsulated device; (2) depositing a sealing material over at least a portion of the cooled device to form an encapsulated device; and (3) heat treating the encapsulated device to form a hermetically sealed device. In one embodiment, the sealing material is a low liquidus temperature inorganic (LLT) material such as, for example, tin-fluorophosphate glass, tungsten-doped tin fluorophosphate glass, chalcogenide glass, tellurite glass, borate glass and phosphate glass. In another embodiment, the sealing material is a Sn | 08-05-2010 |
| 20100219064 | FILM FORMING METHOD - A film forming method is constituted by forming a silicon oxide film on a substrate by causing silicon generated by sputtering with silicon as a target to be incident on the substrate from an oblique direction while supplying oxygen gas onto the substrate. | 09-02-2010 |
| 20100294651 | PROCESS FOR PRODUCING GRAY TONE MASK - A method for manufacturing a gray-tone mask that decreases the wavelength dependency with respect to an exposure wavelength under stable and simple film formation conditions. A reactive sputtering method that sputters a pure Cr target in an atmosphere of Ar and NO is used to form a Cr nitride film having a single-layer structure. Based on a plurality of different spectral transmittance curves obtained under a plurality of film formation conditions having different NO concentrations, a target concentration (intermediate value) for NO is obtained that sets the transmittance uniformity of the semi-transparent film to 1.0% or less in the range of 365 nm to 436 nm or 4.0% or less in the range of 300 nm to 500 nm. Then, a semi-transparent film is formed by using the NO target concentration. | 11-25-2010 |
| 20110155562 | LENS MODULE FABRICATION METHOD - A method for fabricating a lens module includes forming an IR-cut filter, forming a shading block on part of a surface of the IR-cut filter, forming a blocking layer on the IR-cut filter and the shading block, forming an electromagnetic shielding layer on the blocking layer, polishing the electromagnetic shielding layer and the blocking layer to expose the shading block, removing the shading block from the IR-cut filter to form an optical component, mounting a lens in the barrel portion adjacent to the IR-cut filter portion, and packaging the holding portion of the optical component to a printed circuit board to form the lens module. | 06-30-2011 |
| 20110192716 | METHOD FOR PRODUCING AN ITO LAYER AND SPUTTERING SYSTEM - The present disclosure relates to a method for producing an indium-tin-oxide layer, comprising: providing a substrate to be coated in a sputtering chamber; providing a rotatable non-bonded target around a backing tube for coating the substrate in the sputtering chamber; and sputtering the material from the target in an atmosphere containing an O | 08-11-2011 |
| 20120031749 | REACTIVE SPUTTERING WITH MULTIPLE SPUTTER SOURCES - The apparatus ( | 02-09-2012 |
| 20120152730 | GLASS COMPOSITION FOR ULTRAVIOLET LIGHT AND OPTICAL DEVICE USING THE SAME - A glass composition for ultraviolet light is provided. The glass composition for ultraviolet light contains Lu, Al, and O in an amount of 99.99 weight % or more in total. The glass composition contains Lu in an amount of 24% or more and 33% or less in cation percent and Al in an amount of 67% or more and 76% or less in cation percent. | 06-21-2012 |
| 20130248353 | DEEP-UV OPTICAL COATING PREPARATION METHOD USING SPUTTERING DEPOSITION WITH PURE METAL TARGET - A deep-UV optical coating preparation method includes the step of putting a high purity metal ingot and a substrate in a sputter chamber and electrically connecting a sputter power supply to the sputter chamber and the step of applying an inertia gas, oxygen and a fluorinated gas to the sputter chamber for causing deposition of a high-refraction fluorine-doped metal oxide film and a low-refraction metal fluoride film to form a deep ultraviolet optical coating having excellent optical and mechanical properties on the substrate. | 09-26-2013 |
| 20140102880 | MOLYBDENUM-CONTAINING TARGETS COMPRISING THREE METAL ELEMENTS - The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of: placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target while the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably is a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.5 to 45 atomic percent of a second metal element selected from the group consisting of niobium and vanadium; and 0.5 to 45 atomic percent of a third metal element selected from the group consisting of tantalum, chromium, vanadium, niobium, and titanium. | 04-17-2014 |
| 20140166472 | Method and apparatus for temperature control to improve low emissivity coatings - A method for making low emissivity panels, comprising cooling the article before or during sputter depositing a coating layer, such as a seed layer or an infrared reflective layer. The cooling process can improve the quality of the infrared reflective layer, which can lead to better transmittance in visible regime, block more heat transfer from the low emissivity panels, and potentially can reduce the requirements for other layers, so that the overall performance, such as durability, could be improved. | 06-19-2014 |
| 20150014151 | METHOD OF FABRICATING SPUTTERING TARGET, SPUTTERING TARGET USING THE METHOD, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING THE SPUTTERING TARGET - A method of fabricating a sputtering target includes preparing a first powder material including at least one of a tin oxide and a mesh-forming oxide; mixing the first powder material and a second powder material comprising carbon or a tin oxide to prepare a mixture; simultaneously performing a primary compression and primary sintering on the mixture in a reduction atmosphere; and simultaneously performing a secondary compression and secondary sintering on the mixture in the reduction atmosphere to prepare the sputtering target. | 01-15-2015 |
| 20160103379 | FABRICATION OF LOW DEFECTIVITY ELECTROCHROMIC DEVICES - Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition. | 04-14-2016 |
| 204192270 | Reflective | 7 |
| 20090188786 | Hidden Micromirror Support Structure - Methods and apparatus for use with a micromirror element includes a micromirror a micromirror having a substantially flat outer surface disposed outwardly from a support structure that is operable to at least partially support the micromirror. The support structure includes at least one layer overlying at least two discrete planes that are both substantially parallel to the outer surface of the micromirror. In one particular embodiment, the support structure includes annular-shaped sidewalls that encapsulate a photoresist plug. | 07-30-2009 |
| 20110180393 | PROCESS FOR FORMING A BACK REFLECTOR FOR PHOTOVOLTAIC DEVICES - A process for forming a textured back reflector for a photovoltaic device is provided. The process includes providing a moving substrate, positioning the substrate within a deposition chamber, and sputtering a metal or a metal alloy target positioned within the deposition chamber to produce sputtered material. The process further includes introducing a reacting gas mixed with argon into the deposition chamber. The reacting gas and the sputtered metal or metal alloy material form an alloy layer. The alloy layer is formed on the substrate and provides a textured surface on the substrate. | 07-28-2011 |
| 20110266140 | PROCESS FOR PRODUCING REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY - Provision of a process for producing an EUV mask blank wherein formation of scars of a glass substrate surface or a chuck surface due to sandwiching of foreign objects such as particles between an electrostatic chuck and the glass substrate, is suppressed. | 11-03-2011 |
| 20110303529 | PROCESSES AND DEVICE FOR THE DEPOSITION OF FILMS ON SUBSTRATES - Deposition processes and devices for the fabrication of multilayer systems to better control the energy contribution at different stages of the deposition. This is achieved by depositing films by sputtering in a scheme providing for thermalized particles. Thermalized particles are obtained by choosing the working gas pressure and the distance between target and substrate to result in a mean free path of particles smaller than the distance between target and substrate or to result in a product of pressure and distance being larger than 2.0 cmPa. | 12-15-2011 |
| 20130256121 | Manufacturing method of reflective layer for reflective type liquid crystal - The present invention provides a manufacturing method of a reflective layer for a reflective type liquid crystal display, comprising: providing a manufacturing method of the reflective layer for a reflective type liquid crystal display, comprising: providing a substrate, the substrate comprising a reflective area and a non-reflective area; coating a photoresist to cover the non-reflective area; placing the substrate in a sputtering chamber for depositing a reflective metal layer on the reflective area of the substrate; passing the reaction gas into the sputtering chamber, and using the RF magnetron sputtering method to bombard the surface of the reflective metal layer such that the surface of the reflective metal layer and the reaction gas react to form a metal compound as the reflective layer. The present invention has both diffusion and reflection characters, and the manufacturing method of the reflective layer of this invention is simple in manufacturing process, and the reflectivity of the reflective layer is high, and cost is low. | 10-03-2013 |
| 20160141156 | PRODUCTION METHOD FOR INFRARED RADIATION REFLECTING FILM - An infrared reflecting film includes an infrared reflecting layer having a metal layer and a metal oxide layer and a transparent protective layer in this order on a transparent film substrate. In the manufacturing method, the metal oxide layer is deposited by a DC sputtering method using a roll-to-roll sputtering apparatus. A sputtering target used in the DC sputtering method contains zinc atoms and tin atoms. The sputtering target is preferably obtained by sintering a metal powder and at least one metal oxide among zinc oxide and tin oxide. | 05-19-2016 |
| 20160145736 | METHOD FOR PRODUCING INFRARED RADIATION REFLECTING FILM - The method for manufacturing an infrared reflecting film comprises, in order: a metal layer forming step of depositing a metal layer on a transparent film substrate; a metal oxide layer forming step of depositing a surface-side metal oxide layer by DC sputtering on the metal layer so as to be in direct contact with the metal layer; and a transparent protective layer forming step of depositing a transparent protective layer on the surface-side metal oxide layer. In the metal oxide layer forming step, a sputtering target used for DC sputtering contains zinc atoms and tin atoms, and is preferably formed by sintering a metal powder and at least one metal oxide among zinc oxide and tin oxide. In the surface-side metal oxide layer forming step, an inert gas and an oxygen gas are introduced into a sputtering chamber. The oxygen concentration in the gas introduced to the sputtering chamber is preferably not more than 8 vol %. | 05-26-2016 |
| 204192280 | Absorptive | 2 |
| 20140216925 | Single Target Sputtering of Copper Zinc Tin Sulfide Selenide, CZT(S, Se) - A method of forming a CZT(S,Se) thin film from a quaternary target involves sputtering a quaternary target onto a substrate, wherein the quaternary target comprises (a) copper, (b) zinc, (c) tin, and (d) selenium and/or sulfur, wherein each component (a) through (d) is present in the quaternary target within ±50% of a 2:1:1:4 molar ratio, respectively, thereby forming a CZT(S,Se) thin film on the substrate, wherein the CZT(S,Se) thin film has a kesterite crystalline phase and a band gap of about 1.0 to 1.5 eV. In an embodiment, a ternary target is employed. | 08-07-2014 |
| 20150345007 | COMBINATION VAPOR DEPOSITION CHAMBER - This application relates to a combination vapor deposition process chamber. In, some embodiments, a combination vapor deposition process chamber can be used to apply an optical coating to a substrate such as glass, as well as an anti-smudge coating to the same substrate. The combination vapor deposition process chamber can include a sputter target, reactive gas and plasma source, and an anti-smudge coating source. Both sputter deposition and evaporation deposition can be performed with the combination vapor deposition process chamber without exposing the substrate to open air and contaminants between deposition processes. In some embodiments, the combination vapor deposition process chamber uses multiple sub-process chambers connected by a low pressure passageway for transferring substrates between deposition processes. | 12-03-2015 |
| 204192290 | Transparent conductor | 26 |
| 20080210551 | Target for Transparent Conductive Thin Film, Transparent Conductive Thin Film and Manufacturing Method Thereof, Electrode Material for Display, and Organic Electroluminescence Element - The target for the transparent conductive thin film having indium oxide as its major component and containing tungsten and/or molybdenum, obtained by forming a body of indium oxide powder, and tungsten oxide power and/or molybdenum oxide powder and then heating or sintering the formed body such that the thin film after sputtering has indium oxide as the main component and contains tungsten and/or molybdenum with an atomic ratio (W+Mo)/In of 0.0040 to 0.0470, whereby a transparent conductive thin film having excellent surface smoothness and low specific resistance of 6.0×10 | 09-04-2008 |
| 20080237034 | Processes for forming transparent conductive films - A target containing an indium oxide and a tin oxide is used and sputtered particles from the target are transported by a forced gas flow of a sputter gas onto an organic substrate and deposited on the organic substrate while applying a DC bias voltage or an RF bias voltage to the organic substrate. The organic substrate is close to the target so that it is positively acted on by plasma. Thus, an ITO transparent conductive film having a resistivity of 10 | 10-02-2008 |
| 20090152103 | Sputtering apparatus and method of manufacturing flat display device using the sputtering apparatus - Provided is a sputtering apparatus which can check a short-circuit of a mask during a non-discharge period, the sputtering apparatus including: a substrate support, which is installed inside a chamber and supports a substrate; a target, which includes a target material that is to be deposited on the substrate; a mask, which is spaced apart from the substrate so as to surround the peripheral part of the substrate; a shield, which supports the mask and is connected to ground; an insulating member, which combines the mask and the shield and includes an insulating material; and a short-circuit detecting apparatus for detecting a short-circuit of the mask during a non-discharge period of the sputtering apparatus. | 06-18-2009 |
| 20100006426 | METHOD FOR DEPOSITING AN OXIDE LAYER ON ABSORBERS OF SOLAR CELLS - A method for depositing at least one stable, transparent and conductive layer system on chalcopyrite solar cell absorbers. The at least one stable, transparent and conductive layer system may be formed via ionizing PVD (physical vapor deposition) technology by using either high power pulsed magnetron sputtering (HPPMS) or high power impulse magnetron sputtering (HIPIMS). | 01-14-2010 |
| 20100133094 | TRANSPARENT CONDUCTIVE FILM WITH HIGH TRANSMITTANCE FORMED BY A REACTIVE SPUTTER DEPOSITION - Methods for sputter depositing a transparent conductive layer are provided in the present invention. The transparent conductive layer may be utilized as a contact layer on a substrate or a back reflector in a photovoltaic device. In one embodiment, the method includes supplying a gas mixture into the processing chamber, sputtering source material from a target disposed in the processing chamber, wherein the target is fabricated from a zinc containing material having an aluminum containing dopant concentration less than 3 percent by weight, and reacting the sputtered material with the gas mixture. | 06-03-2010 |
| 20100163406 | SUBSTRATE SUPPORT IN A REACTIVE SPUTTER CHAMBER - An apparatus for sputter depositing a transparent conductive oxide (TCO) layer are provided in the present invention. The transparent conductive oxide layer may be utilized as a contact layer on a substrate or a back reflector in a photovoltaic device. In one embodiment, the apparatus includes a processing chamber having an interior processing region, a substrate carrier system disposed in the interior processing region, the substrate carrier system having a plurality of rollers for conveying a substrate through the interior processing region, and an insulating member electrically isolating the rollers from the processing chamber. | 07-01-2010 |
| 20100187100 | METHOD FOR FORMING TRANSPARENT CONDUCTIVE FILM - A method for forming a transparent conductive film forms the transparent conductive film containing ZnO as a basic element on a substrate by a sputtering which is performed by applying a sputtering voltage to a target made of a material to form the transparent conductive film and generating a horizontal magnetic field over a surface of the target. The sputtering is performed by setting the sputtering voltage to 340 V or less. | 07-29-2010 |
| 20110067998 | METHOD OF MAKING AN ELECTRICALLY CONDUCTIVE CADMIUM SULFIDE SPUTTERING TARGET FOR PHOTOVOLTAIC MANUFACTURING - An electrically conductive cadmium sulfide sputtering target, the method of making the same, and the method of manufacturing a photovoltaic cell using the same. | 03-24-2011 |
| 20110089026 | TOUCH PANEL MANUFACTURING METHOD AND FILM FORMATION APPARATUS - A touch panel manufacturing method is a method for manufacturing a touch panel including a transparent substrate having a main surface on which a transparent-electroconductive film is formed. The transparent-electroconductive film is formed on the main surface of the transparent substrate by carrying out sputtering using a target made of a zinc oxide-based material in a reactive gas atmosphere containing two or three gases selected from a group consisting of hydrogen gas, oxygen gas, and water vapor. | 04-21-2011 |
| 20110100801 | TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING SAME - Disclosed herein are a transparent conductive film and a method for producing the same. The method for producing a transparent conductive film includes a step of forming a transparent conductive film on a support by a physical film-forming method using a sintered body as a target, wherein the sintered body contains Zn, Sn, and O and has a molar ratio of Sn to the sum of Sn and Zn (Sn/(Sn+Zn)) of 0.7 or higher and 0.9 or less. | 05-05-2011 |
| 20110114475 | METHOD FOR PRODUCING TRANSPARENT CONDUCTIVE FILM - Disclosed herein is a method for producing a transparent conductive film. The method for producing a transparent conductive film comprises a step of forming a transparent conductive film on a support by a physical film-forming method using a sintered body as a target in a mixed gas atmosphere, wherein the sintered body contains Zn, Sn, and O, and the mixed gas contains an inert gas and oxygen and has an oxygen concentration of 0.01 vol % or higher and 0.4 vol % or less. | 05-19-2011 |
| 20110139607 | TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING THE SAME - A transparent conductive film comprising: an organic polymer film substrate; an Al | 06-16-2011 |
| 20110180394 | SPUTTERING METHOD AND SPUTTERING APPARATUS - There is provided a sputtering method in which abnormal discharging due to charge-up of a to-be-processed substrate is restrained and in which a good transparent conductive film can be formed on a to-be-processed large-area substrate. Out of a plurality of targets disposed side by side with, and at a predetermined distance from, one another so as to lie opposite to the to-be-processed substrate inside a sputtering chamber, electric power is applied, by alternately changing polarity at a predetermined frequency, to the targets that form respective pairs. Each target is thus alternately switched to anode electrode and cathode electrode. Glow discharge is thus generated between the anode electrode and the cathode electrode to thereby form plasma atmosphere, whereby each target is sputtered. During sputtering, electric power application to each of the targets is intermittently stopped. | 07-28-2011 |
| 20110266141 | SYSTEM AND METHODS FOR HIGH-RATE CO-SPUTTERING OF THIN FILM LAYERS ON PHOTOVOLTAIC MODULE SUBSTRATES - Systems and methods for deposition of a thin film layer on photovoltaic (PV) module substrates are generally provided. The system can include a sputtering chamber configured to receive the substrates, at least two targets positioned within the sputtering chamber, and an independent power source connected to each target. Each target can be positioned within the sputtering chamber to face the substrates such that the targets are simultaneously sputtered to supply source material to a plasma field for forming a thin film layer on a surface of the substrates. The multiple targets can also be positioned such that a facing axis extending perpendicularly from a center of each target converges at a point on the surface of the substrate. | 11-03-2011 |
| 20120024695 | SYSTEMS AND METHODS FOR HIGH-RATE DEPOSITION OF THIN FILM LAYERS ON PHOTOVOLTAIC MODULE SUBSTRATES - Apparatus and processes for sequential sputtering deposition of a target source material as a thin film on a photovoltaic module substrate are provided. The apparatus includes a first sputtering deposition chamber and a second sputtering deposition chamber that are integrally connected such that the substrates being transported through the apparatus are kept at a system pressure that is less than about 760 Torr. The load vacuum chamber is connected to a load vacuum pump configured to reduce the pressure within the load vacuum chamber to an initial load pressure. The first sputtering deposition chamber includes a first target, and the second sputtering deposition chamber includes a second target. A conveyor system is operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through load vacuum chamber, into and through the first sputtering deposition chamber, and into and through the second sputtering deposition chamber at a controlled speed. | 02-02-2012 |
| 20120211355 | TRANSPARENT CONDUCTIVE COMPOSITION, TARGET, TRANSPARENT CONDUCTIVE THIN FILM USING THE TARGET AND METHOD FOR FABRICATING THE SAME - Disclosed are a transparent conductive composition including a material of the following formula, a target, a transparent conductive thin film using the target, and a method for fabricating the same. The disclosed transparent conductive composition and transparent conductive thin film have superior conductivity (low resistivity) and high light transmittance. Especially, they may be usefully applied for the flexible electronic devices, which may be called the core of the future display industry, because they have low resistivity of not greater than 10 | 08-23-2012 |
| 20120273344 | METHOD FOR PRODUCTION OF TRANSPARENT CONDUCTIVE FILM AND TOUCH PANEL THEREWITH - There is provided a transparent conductive film having a transparent conductor layer with a high level of pen input durability and high-temperature, high-humidity reliability. The transparent conductive film of the present invention is a transparent conductive film, comprising: a transparent film substrate; a transparent conductor layer that is provided on one side of the transparent film substrate and has a thickness d of 15 nm to 35 nm and an average surface roughness Ra of 0.37 nm to 1 nm; and at least a single layer of an undercoat layer interposed between the transparent film substrate and the transparent conductor layer. | 11-01-2012 |
| 20130098754 | TRANSPARENT CONDUCTIVE COMPOSITION, TARGET, TRANSPARENT CONDUCTIVE THIN FILM USING THE TARGET AND METHOD FOR FABRICATING THE SAME - Disclosed are a transparent conductive composition including a material of the following formula, a target, a transparent conductive thin film using the target, and a method for fabricating the same. The disclosed transparent conductive composition and transparent conductive thin film have superior conductivity (low resistivity) and high light transmittance. Especially, they may be usefully applied for the flexible electronic devices, which may be called the core of the future display industry, because they have low resistivity of not greater than 10 | 04-25-2013 |
| 20130105301 | TRANSPARENT CONDUCTIVE FILM AND MANUFACTURING METHOD THEREFOR | 05-02-2013 |
| 20130199927 | METHOD OF MANUFACTURING CONDUCTIVE FILM ROLL - A method of manufacturing a conductive film roll includes a first step of sequentially laminating a first transparent conductor layer and a first copper layer on one side of a film base by sputtering and winding up a first laminated body obtained by sputtering to form a first roll, a second step of storing the first roll in an atmosphere for 30 hours or more and forming, on a surface of the first copper layer, an oxide membrane layer containing copper(I) oxide, and a third step of sequentially laminating, while unwinding the first roll, a second transparent conductor layer and a second copper layer on another side of the film base by sputtering and winding up a second laminated body obtained by sputtering to form a second roll. | 08-08-2013 |
| 20140197025 | HOT TILE SPUTTERING SYSTEM - A method of sputter coating a glass substrate includes providing a glass substrate and providing a sputtering assembly for sputtering a coating onto the glass substrate in a vacuum deposition chamber. The sputtering assembly includes a backing plate and a separating element disposed on the backing plate. At least one target element is provided and disposed at and in contact with a surface of the separating element. The target element is not bonded the separating element when disposed at and in contact with the surface of the separating element. An expansion gap is provided at or adjacent to the target element to allow for expansion of the target element during the sputtering process. Material from the target element is sputtered and the target element is heated to a substantially elevated temperature during the sputtering process. The sputtering process coats a surface of the glass substrate with the target element material. | 07-17-2014 |
| 20140197026 | SPUTTERING APPARATUS AND METHOD FOR FORMING A TRANSMISSIVE CONDUCTIVE LAYER OF A LIGHT EMITTING DEVICE - There is provided a method for manufacturing a nitride semiconductor light emitting device, including: forming a light emitting structure including first and second conductive nitride semiconductor layers on a substrate and an active layer formed therebetween; forming the first conductive nitride semiconductor layer, the active layer, and the second conductive nitride semiconductor layer in sequence; forming a first electrode connected to the first conductive nitride semiconductor layer; forming a photo-resist layer on the second conductive nitride semiconductor layer so as to expose a portion of the semiconductor layer; and removing the photo-resist layer after a reflective metal layer and a barrier metal layer serving as a second electrode structure are successively formed on the second conductive nitride semiconductor layer exposed by the photo-resist layer. | 07-17-2014 |
| 20140332371 | TRANSPARENT CONDUCTIVE OXIDES - A method of deposition of a transparent conductive film from a metallic target is presented. A method of forming a transparent conductive oxide film according to embodiments of the present invention include depositing the transparent conductive oxide film in a pulsed DC reactive ion process with substrate bias, and controlling at least one process parameter to affect at least one characteristic of the conductive oxide film. The resulting transparent oxide film, which in some embodiments can be an indium-tin oxide film, can exhibit a wide range of material properties depending on variations in process parameters. For example, varying the process parameters can result in a film with a wide range of resistive properties and surface smoothness of the film. | 11-13-2014 |
| 20140353140 | METHOD FOR MANUFACTURING TRANSPARENT ELECTROCONDUCTIVE FILM - Disclosed is a manufacturing method for a transparent electroconductive film having excellent light-transmitting properties and low specific resistance. The present invention provides a method of manufacturing a transparent electroconductive film which comprises a film substrate and a crystallized indium tin oxide layer formed on the film substrate. The method comprises: a step of placing the film substrate in a sputtering apparatus using an indium tin oxide as a target material, and depositing indium tin oxide including amorphous parts on the film substrate by a magnetron sputtering process in which a horizontal magnetic field on the target material is set to 50 mT or more; and a step of, after the step of depositing indium tin oxide including amorphous parts, subjecting the indium tin oxide including amorphous parts to a heating treatment to thereby crystallize the indium tin oxide including amorphous parts to form the crystallized indium tin oxide layer. | 12-04-2014 |
| 20150060264 | FABRICATION OF LOW DEFECTIVITY ELECTROCHROMIC DEVICES - Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition. | 03-05-2015 |
| 20160086778 | SPUTTERING TARGET AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM USING THE SAME - A sputtering target includes: a first crystal comprising In | 03-24-2016 |
