Entries |
Document | Title | Date |
20080197015 | MULTIPLE-MAGNETRON SPUTTERING SOURCE WITH PLASMA CONFINEMENT - A sputtering source has a magnetron and a target. Control magnets are provided about the target to modify the magnetic lines of the magnetron. A sputtering source has several magnetrons, each having a respective target. A plasma/sputtering shield is provided in front of the targets. The shield has several windows, each aligned with one of the targets. Magnets are provided on the shield to control the magnetic lines of the magnetrons. | 08-21-2008 |
20080202919 | Apparatus And Method For Manufacturing Stress-Free Flexible Printed Circuit Board - An apparatus and method for manufacturing a highly efficient flexible thin metal film-laminated strip by improves adhesiveness between a polyimide strip and a thin metal film, and removes stress from thin films laminated through magnetron sputtering, which is a dry deposition process. The stress-free flexible circuit board manufacturing method includes the steps of: a) depositing a seed layer on the substrate using the magnetron deposition source; b) depositing a compressive thin film using the single magnetron deposition source arranged next to the magnetron deposition source; c) depositing tensile thin film using the dual magnetron deposition source arranged next to the single magnetron deposition source; and d) repeating the steps b) and c) so as to sequentially and alternately deposit compressive thin films and tensile thin films thereby obtaining a thick film with a desired thickness. | 08-28-2008 |
20080210545 | Method and Apparatus for Producing Electric Discharges - In producing discharges in a load element such as a magnetron sputtering device, electric pulses are provided from different electric pulse sources, e.g. three or more electric pulse sources. The pulse sources are controlled by a control and monitoring unit to give the element electric pulses different heights and start and end times. The element electric pulses are summed, such as by connecting the pulse sources in parallel to the load, to form resulting, relatively long electric pulses. Each of the resulting electric pulses can have a portion that has a substantially constant level and then the substantially constant level is formed from at least two element electric pulses having the same pulse height. The resulting electric pulses are applied to electrodes in the load. The element electric pulses can have the same polarity such as being half a period of a sinusoid oscillation of a single frequency. Then the time intervals between starts of successive element electric pulses are relatively short such as not being not larger than one third of the period of the sinusoid. For example, the resulting electric pulses can have a substantially rectangular shape, a shape including two different substantially constant levels or have a substantially triangular shape. | 09-04-2008 |
20080210546 | Sputtering apparatus, method for producing a transparent electroconductive film - A transparent electroconductive film having a small resistance value and a high transmittance and causing no damage upon an underlying organic EL film is formed. First and second targets are spaced and arranged in parallel, and a shielding plate is provided between the space and a transporting path for an object to be film-formed. Sputtered particles are allowed to reach the object through a release hole formed at the shielding plate. The sputtering particles obliquely irradiated are shielded by the shielding plate so that the transparent electroconductive film having a low resistivity and high transmittance can be formed. | 09-04-2008 |
20080210547 | Sputtering apparatus and film-forming processes - A sputtering apparatus for ensuring high target utilization efficiency is provided. The sputtering apparatus | 09-04-2008 |
20080210548 | Method for Controlling Plasma Density or the Distribution Thereof - Magnetron source has a target configuration with a sputter surface, a magnet configuration generating above the sputter surface a magnetic field which forms, in top view onto the sputter surface, at least one magnet field loop. Viewed in a cross-sectional direction upon the target configuration, a tunnel-shaped arc magnet field is formed and further an electrode configuration is provided which generates, when supplied by a positive electric potential with respect to an electric potential applied to the target configuration, an electric field which crosses at an angle the magnetic field and wherein the electrode configuration comprises a distinct electrode arrangement in a limited segment area of the electrode configuration, which is substantially shorter than the overall length of the magnet field loop. The electrode arrangement along the limited segment area is electrically isolated from the remainder of the electrode configuration so as to be electrically operated differently than the remainder of the electrode configuration. | 09-04-2008 |
20080210549 | METHOD AND APPARATUS FOR MANUFACTURING A SUBSTRATE WITH A MAGNETRON SPUTTER COATING - Manufacturing a coated substrate by magnetron sputtering includes cyclically moving the magnetron magnetic field pattern along a sputter surface, positioning a substrate to be coated a distance from and facing the sputter surface, moving the substrate along the sputter surface and varying an amount of material deposited on the total substrate per time unit from the magnetron source that is cyclically and phase-locked with the cyclically moving magnetron magnetic field pattern. | 09-04-2008 |
20080223714 | Method And Sputter-Deposition System For Depositing A Layer Composed Of A Mixture Of Materials And Having A Predetermined Refractive Index - A method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index are provided. The sputter-deposition system includes a plurality of target cathodes, each of which comprises a target material having a different composition, that are powered by a single DC power supply. The plurality of target cathodes are cosputtered to deposit a layer composed of a mixture of materials on a substrate. The composite refractive index of the layer is controlled by adjusting an operating parameter of the plurality of target cathodes. Suitable operating parameters include cathode power, cathode voltage, cathode current, an angle between a cathode support and the substrate, and a flow rate of a reactive gas. | 09-18-2008 |
20080237032 | METHOD OF APPLYING A BURNABLE POISON ONTO THE EXTERIOR OF NUCLEAR ROD CLADDING - A method for applying a burnable poison onto the cladding of a nuclear fuel rod ( | 10-02-2008 |
20080245657 | SPUTTERING DEVICE AND FILM FORMING METHOD - A sputtering apparatus according to the present invention is provided with first to fourth targets. The first and the second targets are disposed so that their surfaces face each other. The third and the fourth targets are also disposed so that their surfaces face each other. When a dielectric film is formed, sputtering is alternately performed on the first and the second targets and on the third and the fourth targets. When sputtering is performed on two of the targets having surfaces that face each other, the remaining two targets function as a ground. As a result, abnormal discharges are inhibited. | 10-09-2008 |
20080257716 | Coating Method and Apparatus, a Permanent Magnet, and Manufacturing Method Thereof - A film is formed at a high rate on the surface of an iron-boron-rare-earth-metal magnet having a given shape, while effectively using dysprosium or terbium as a film-forming material. Thus, productivity is improved and a permanent magnet can be produced at low cost. A permanent magnet is produced through a film formation step in which a film of dysprosium is formed on the surface of an iron-boron-rare-earth-metal magnet of a given shape and a diffusion step in which the magnet coated is subjected to a heat treatment at a given temperature to cause the dysprosium deposited on the surface to diffuse into the grain boundary phase of the magnet. The film formation step comprises: a first step in which a treating chamber where this film formation is performed is heated to vaporize dysprosium which has been disposed in this treating chamber and thereby form a dysprosium vapor atmosphere having a given vapor pressure in the treating chamber; and a second step in which a magnet kept at a temperature lower than the internal temperature of the treating chamber is introduced into this treating chamber and the dysprosium is selectively deposited on the magnet surface based on a temperature difference between the treating chamber and the magnet until the magnet temperature reaches a given value. | 10-23-2008 |
20080283388 | Hydrogen gas detecting membrane - An optical hydrogen gas detecting membrane is prepared by sequentially depositing a platinum oxide layer and a catalytic metal layer on a transparent substrate, such as quartz glass, by vapor deposition such as the sputtering method. Palladium or platinum is used as the catalytic metal layer. | 11-20-2008 |
20080308410 | Redundant Anode Sputtering Method and Assembly - A method is provided for coating a substrate with the aid of a magnetron cathode and two electrodes which are alternately impinged upon by a positive potential and a negative potential. Also disclosed is an assembly for coating a substrate, comprising a vacuum chamber, a magnetron cathode, two electrodes, and a voltage source. A negative potential is generated at a level that is no greater than the level of the cathode potential, thus preventing the electrode that is to be cleaned from being stripped to a greater extent than the same was coated in the previous half-wave. The magnetron cathode and the electrodes are connected to the voltage source via switching elements without being galvanically such that a negative and a positive voltage generated from the voltage source can be alternatively applied to the electrodes, the level of said voltage being no greater than the cathode voltage. | 12-18-2008 |
20090000943 | MAGNETRON SPUTTERING APPARATUS AND MANUFACTURING METHOD FOR STRUCTURE OF THIN FILM - According to an aspect of an embodiment, a magnetron sputtering apparatus sputtering a target by a plasma includes a plurality of magnets that are arranged in the vicinity of a position where the target is disposed. The plurality of magnets form a magnetic field for confining the plasma; and a rotating mechanism rotates the plurality of magnets around a rotation center. | 01-01-2009 |
20090020416 | SPUTTER COATING DEVICE AND METHOD OF DEPOSITING A LAYER ON A SUBSTRATE - A sputter coating device comprises a vacuum coating chamber, substrates arranged within the coating chamber, a cylindrical hollow cathode including a rotatable target rotating around a central axis A, and a magnet assembly which is arranged within the hollow cathode such that confining plasma zones are generated in an area above the surface of the target. At least one substrate is to be coated. The substrate has an OLED layer deposited on the substrate surface. An intermediate area is arranged between the surface of the target and a shield that shields particles sputtered from the surface of the target that move in a direction toward the shield. On each side of the shield, passages are provided between the intermediate area and coating area. Through the passage, only sputtered particles that have been scattered in the intermediate area may enter the coating area via the passage, and impinge the OLED layer. | 01-22-2009 |
20090045045 | PUCK FOR CATHODIC ARC COATING WITH CONTINUOUS GROOVE TO CONTROL ARC - A puck for providing a coating material in a cathodic arc coating system has a generally uniform depression formed at the outer periphery. The depression ensures that an arc from the coating apparatus will move uniformly about the outer periphery of the puck, such that a coating cloud will also be uniformly applied to parts to be coated. | 02-19-2009 |
20090050471 | PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING DEPOSITING LAYERS WITHIN OPENINGS - A process of forming an electronic device can include depositing a first layer over a substrate and depositing a second layer over the first layer. In one embodiment, depositing the first layer is performed at a first alternating current (“AC”) power, and depositing the second layer is performed at a second AC power that is different from the first AC power. In another embodiment, the first layer is formed by a physical vapor deposition technique at a first power sufficient to remove the insulating layer using first metal ions, wherein the first layer includes an overhanging portion extending over the bottom of the opening. In a further embodiment, the second layer is formed by the physical vapor deposition technique using second metal ions and a second power sufficient to reduce a lateral dimension of the overhanging portion. | 02-26-2009 |
20090057133 | Method and Apparatus for Reactive Solid-Gas Plasma Deposition - A device for magnetically enhanced sputtering and plasma deposition includes a plasma source unit and a work piece processing unit in which an anode space and a processing chamber are located in direct communication with each other. Sputtering and reactive gases are provided through an inlet of the processing chamber holding the work piece. Pulsed electric discharges are produced between the magnetron sputtering cathode and the anode, including walls of the anode space. A stationary magnetic mirror trap is provided in the combined vessel by an anode coil surrounding the anode space and another coil mounted at the processing chamber remote from the cathode. A plasma can then flow into the processing chamber suitable for reactive deposition on three-dimensional and large work pieces. A chemisorption filter including filter plates is arranged in the anode space for preventing penetration of the reactive gas into the region at the cathode. The other coil can be included in a plasma source similar to the first one, both plasma sources connected to the same work piece processing unit. | 03-05-2009 |
20090057134 | THIN FILM APPLICATION DEVICE AND METHOD FOR COATING SMALL APERTURE VACUUM VESSELS - A device and method for coating an inside surface of a vessel is provided. In one embodiment, a coating device comprises a power supply and a diode in electrical communication with the power supply, wherein electrodes comprising the diode reside completely within the vessel. The method comprises reversibly sealing electrodes in a vessel, sputtering elemental metal or metal compound on the surface while maintaining the surface in a controlled atmosphere. | 03-05-2009 |
20090065349 | Plasma Vapor Deposition - A plasma vapor deposition system is described for forming a feature on a semiconductor wafer. The plasma vapor deposition comprises a primary target electrode and a plurality of secondary target electrodes. The deposition is performed by sputtering atoms off the primary and secondary target electrodes. | 03-12-2009 |
20090065350 | FILTERED CATHODIC ARC DEPOSITION WITH ION-SPECIES-SELECTIVE BIAS - A dual-cathode arc plasma source is combined with a computer-controlled bias amplifier to synchronize substrate bias with the pulsed production of plasma. Accordingly, bias can be applied in a material-selective way. The principle has been applied to the synthesis metal-doped diamond-like carbon films, where the bias was applied and adjusted when the carbon plasma was condensing, and the substrate was at ground when the metal was incorporated. In doing so, excessive sputtering by too-energetic metal ions can be avoided while the sp | 03-12-2009 |
20090084670 | Light Emitting Diode Vacuum Coating by Magnetized Mask - The present invention discloses an improved method of LED reflector manufacturing process where the method includes providing a substrate, wherein said substrate comprises a reflector unit, and a Light Emitting Diode; providing a shield member with ferromagnetic property; placing said shield member over the desired area of over the substrate; providing a magnet where said shield member is attracted to; placing said magnet immediately below the substrate wherein said magnet is capable of immobilizing the shield member over the substrate; performing a vacuum deposition coating; and removing the magnet and the shield member. | 04-02-2009 |
20090084671 | SPUTTERING APPARATUS - A sputtering apparatus that shortens the operational down-time that accompanies target replacement is provided. The sputtering apparatus has a deposition chamber in which a sputtering target and a substrate for deposition are disposed, and includes a mobile partition that divides the deposition chamber into two spaces that are sealed off from each other by moving from a retracted position to an operational position, and undoes the dividing of the deposition chamber by moving from the operational position to the retracted position. The operational position is a position between a region in the deposition chamber in which the substrate is arranged and a region in the deposition chamber in which the sputtering target is arranged, and the apparatus is configured such that target replacement can be carried out while maintaining a vacuum state of one of the two spaces that includes the region in which the substrate is arranged. | 04-02-2009 |
20090114528 | SPUTTER COATING DEVICE AND COATING METHOD - A magnet/target assembly | 05-07-2009 |
20090114529 | SPUTTERING APPARATUS - A coating apparatus is revealed that is designed to coat substrates by means of a physical vacuum deposition process or a chemical vacuum deposition process or a combination thereof. Said coating apparatus is particular in that it uses a rotatable magnetron ( | 05-07-2009 |
20090120783 | Securing device for a sputtering source - A securing device for a sputtering source in a sputtering space includes a current transmitting means ( | 05-14-2009 |
20090120784 | Sputter Targets with Expansion Grooves for Reduced Separation - A magnetron sputtering target having at least one expansion groove strategically located on the target surface such that, during magnetron sputtering, contamination of the target surface due to separation and de-lamination of re-deposited sputtered particles from the target surface is reduced. The sputter target comprises a re-deposited layer having secondary cracks and a characteristic distance between cracks for supporting the inherent material stress associated with the thermal expansion of the target. The expansion groove is then positioned substantially within the characteristic distance to reduce separation and de-lamination of the re-deposited layer from the target surface. | 05-14-2009 |
20090120785 | METHOD FOR FORMING METAL FILM OR STACKED LAYER INCLUDING METAL FILM WITH REDUCED SURFACE ROUGHNESS - A method for forming a stacked layer with a reduced surface roughness that includes at least a metal film and an anti-reflection coating thereon is described. A sputtering process is conducted using a metal target to deposit a layer of metal on a substrate, wherein the DC power density over the sputtered surface of the metal target is set higher than 5 W/inch | 05-14-2009 |
20090127097 | Forming Seed Layer in Nano-Trench Structure Using Net Deposition and Net Etch - A method of forming an integrated circuit structure includes forming a dielectric layer; forming an opening in the dielectric layer; performing a net deposition step to form a seed layer having a portion in the opening, wherein the net deposition step comprises a first deposition and a first etching; performing a net etch step to the seed layer, wherein the net etch step comprises a first etching and a first deposition, wherein a portion of the seed layer remains after the net etch step; and growing a conductive material on the seed layer to fill a remaining portion of the opening. | 05-21-2009 |
20090127098 | SPUTTERING APPARATUS OF FORMING THIN FILM - A sputtering deposit apparatus capable of depositing a thin film having uniform sheet resistance value is provided. The sputtering deposit apparatus is arranged with at least two magnetron sputtering units within a film deposit chamber. On the upstream side in the substrate transfer direction | 05-21-2009 |
20090127099 | Multi-Station Sputtering and Cleaning System - A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators. | 05-21-2009 |
20090134012 | SPUTTERING APPARATUS AND SPUTTERING METHOD - A gas introduction path intended for improving uniformity of the supply of a process gas is provided. A sputtering apparatus of the present invention has substrate holding means that holds a substrate and a gas introduction path, which has a plurality of gas spouts arranged in a closed curve in a plurality of positions surrounding the circumference of the substrate, and gas-introduction connections are provided in at least two positions substantially opposed to each other on the closed curve. Such two gas introduction paths are provided symmetrically with respect to the substrate on the front surface side and the rear surface side of the substrate. | 05-28-2009 |
20090145744 | Method of Forming Film, Film Forming Apparatus and Storage Medium - Even in the application of a highly cohesive metal to a surface of treatment object having recesses of high aspect ratio, a continuous thin-film can be formed. There is provided a method of forming a film, comprising the step of carrying a substrate in a reaction chamber and mounting the same, the step of feeding a raw gas containing a compound of a first metal into the reaction chamber to thereby cause the surface of the substrate to adsorb the compound of the first metal, the step of bringing the compound the first metal into contact with a reducing plasma resulting from activation of a reducing gas to thereby obtain a first metal layer and the step of bringing a target electrode whose at least surface portion consists of a second metal different from the first metal into contact with a sputtering plasma and incorporating the thus ejected second metal into the first metal layer to thereby obtain an alloy layer, wherein this sequence of adsorption, reduction and alloy formation steps is carried out one or more times. By virtue of this method even when the cohesive force of the first metal is large, any migration thereof on the substrate is suppressed to thereby realize formation of a continuous thin film of small thickness. | 06-11-2009 |
20090159428 | PREDICTION AND COMPENSATION OF EROSION IN A MAGNETRON SPUTTERING TARGET - When a magnetron is scanned about the back of a target in a selected complex path having radial components, the erosion profile has a form depending upon the selection of paths. A radial erosion rate profile for a given magnetron is measured. Periodically during scanning, an erosion profile is calculated from the measured erosion rate profile, the time the magnetron spends at different radii, and the target power. The calculated erosion profile may be used to indicate when erosion has become excessive at any location prompting target replacement or to adjust the height of the magnetron above the target for repeated scans. In another aspect of the invention, the magnetron height is dynamically adjusted during a scan to compensate for erosion. The compensation may be based on the calculated erosion profile or on feedback control of the present value of the target voltage for a constant-power target supply. | 06-25-2009 |
20090159429 | REACTIVE SPUTTERING APPARATUS AND REACTIVE SPUTTERING METHOD - Disclosed is a A reactive sputtering apparatus for a bias sputtering method of applying a bias voltage to a supporting substrate in formation of a film of a metal compound on the supporting substrate according to a reactive sputtering method;
| 06-25-2009 |
20090183983 | INSERT PIECE FOR AN END-BLOCK OF A SPUTTERING INSTALLATION - An insert piece ( | 07-23-2009 |
20090194409 | MAGNETRON SPUTTERING MAGNET ASSEMBLY, MAGNETRON SPUTTERING DEVICE, AND MAGNETRON SPUTTERING METHOD - A magnetron sputtering magnet assembly of the invention is a magnetron sputtering magnet assembly movable in a direction generally parallel to a sputtered surface of a target while facing the target, the magnetron sputtering magnet assembly comprises an inner magnet extending in a direction generally perpendicular to the direction of the movement, the N pole or S pole of the inner magnet being opposed to the target; an outer magnet surrounding the inner magnet with a spacing from the inner magnet, the magnetic pole of the outer magnet opposed to the target being opposite to that of the inner magnet; and a nonmagnetic member provided between the inner magnet and the outer magnet and holding the inner magnet and the outer magnet. The magnetic pole opposed to the target in each of the inner magnet and the outer magnet is invertible. The nonuniformity of electron density at the end of the target can be reduced, and the plasma density therein can be made uniform. Thus, the sputtering rate at the target end can be made uniform, and the nonuniformity of film formation distribution on the object under film formation can be reduced. Furthermore, the nonuniformity of target erosion can also be decreased to improve target utilization efficiency. | 08-06-2009 |
20090200158 | HIGH POWER IMPULSE MAGNETRON SPUTTERING VAPOUR DEPOSITION - Method and apparatus for physical vapour deposition (PVD) and in particular high power impulse magnetron sputtering (HIPIMS) deposition is described. The present apparatus and process provide for the creation of a weaker magnetic field in the region of the cathode which reduces the confinement of a significant part of the plasma near the target surface. By weakening the magnetic field in the region of the target, the deposition rate of materials at a substrate has been found to increase by a factor of 9 relative to that of conventional HIPIMS processes employing typical magnetic field strengths. | 08-13-2009 |
20090205949 | MAGNETRON SPUTTERING SOURCE AND ARRANGEMENT WITH ADJUSTABLE SECONDARY MAGNET ARRANGEMENT - The magnetron sputtering source comprises a target mount for mounting a target arrangement comprising a sputtering target having a sputtering surface; a primary magnet arrangement for generating close to said sputtering surface a magnetron magnetic field describing one tunnel-like closed loop having an arc-shaped cross-section; a secondary magnet arrangement for generating close to said sputtering surface an auxiliary magnetic field having a substantially arc-shaped cross-section, said auxiliary magnetic field superposing with said magnetron magnetic field and being substantially inversely polarized with respect to said magnetron magnetic field; and an adjustment unit for adjusting said auxiliary magnetic field. The vacuum treatment apparatus comprises such a magnetron sputtering source. The method for manufacturing coated substrates by magnetron sputtering using a magnetron sputtering source comprises the steps of a) generating close to a sputtering surface of a target said magnetron magnetic field; b) generating close to said sputtering surface said auxiliary magnetic field; and c) adjusting said auxiliary magnetic field. In particular, said secondary magnet arrangement comprises several separately adjustable segments. Using the invention, it is possible to determine gauge functions for precisely achieving target thickness distributions. | 08-20-2009 |
20090205950 | FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A film deposition apparatus includes: a direct current power source; a metal target coupled to the direct current power source; a dielectric frame arranged to surround a periphery of the metal target; an electrode arranged at a back side of the metal target; and a magnetic field generator arranged at a back side of the metal target as well as of the dielectric frame. In the apparatus, at least part of the magnetic field generator is arranged to follow the dielectric frame, and the film deposition apparatus employs reactive direct current sputtering. | 08-20-2009 |
20090218214 | BACKSIDE COATING PREVENTION DEVICE, COATING CHAMBER COMPRISING A BACKSIDE COATING PREVENTION DEVICE, AND METHOD OF COATING - A backside coating prevention device adapted for a coating chamber for coating plate-shaped substrates is provided, said coating chamber being adapted for coating continuously or discontinuously transported plate-shaped substrates, comprising a front wall having a substrate feeding opening and a rear wall having a substrate discharge opening, a coating material source adapted for dispensing coating material into the coating chamber, and a transport system, a front side of the transport system facing the coating material source, the transport system being adapted for continuously or discontinuously transporting a plurality of plate-shaped substrates along a transport path on the front side of the transport system, wherein said backside coating prevention device is adapted for providing a gas barrier at the front side of the transport system and adjacent to the backsides of the plurality of plate-shapes substrates for preventing backside coating of the plate-shaped substrates. | 09-03-2009 |
20090229969 | Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface - In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator. | 09-17-2009 |
20090236218 | METHOD FOR DEPOSITING MULTILAYER COATINGS - The invention relates to a method and apparatus for the generation of multilayered coatings onto substrates. Typically the apparatus used is a closed field unbalanced magnetron configuration in conjunction with one or more cylindrical and rotatable shields and a substrate carrier on which the substrates to be coated are carried. The shields and substrate holder are provided for rotation about a common axis of rotation. The shields are provided with apertures to allow the selective positioning of the apertures to define a passage or passages along which material from the targets can pass onto the substrates. The targets can be cleaned prior to the coating stage by operation of the targets with the shields selectively positioned to prevent the deposited material from reaching the substrates. | 09-24-2009 |
20090242388 | Stress adjustment in reactive sputtering - In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films. | 10-01-2009 |
20090255802 | Cluster generator - Described herein is an apparatus and a method for producing atom clusters based on a gas discharge within a hollow cathode. The hollow cathode includes one or more walls. The one or more walls define a sputtering chamber within the hollow cathode and include a material to be sputtered. A hollow anode is positioned at an end of the sputtering chamber, and atom clusters are formed when a gas discharge is generated between the hollow anode and the hollow cathode. | 10-15-2009 |
20090260975 | Apparatus - A vacuum sputtering apparatus capable of depositing a plurality of thin film layers on a substrate, the apparatus comprising: a vacuum chamber ( | 10-22-2009 |
20090266703 | PLASMA GENERATING DEVICE AND FILM DEPOSITION METHOD IN WHICH THE PLASMA GENERATING DEVICE IS USED - Problem: To generate long plasma easily at low cost and to perform a plurality of film deposition methods using a single plasma generating device. | 10-29-2009 |
20090277778 | MICROWAVE ROTATABLE SPUTTERING DEPOSITION - Disclosed is an invention that uses a coaxial microwave antenna as a primary plasma source in PVD. The coaxial microwave antenna is positioned inside a sputtering target. Instead of using a cathode assist in sputtering, microwaves generated from the coaxial microwave antenna may leak through the sputtering target that comprises a dielectric material to form microwave plasma outside the sputtering target. To further enhance plasma density, a magnetron or a plurality of magnetrons may be added inside the target to help confine secondary electrons. An electric potential may be formed between adjacent magnetrons and may further enhance ionization. To achieve directional control of the generated microwaves, a shield that comprises a dielectric material or dielectric material coated metal may be added proximate the coaxial microwave antenna. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency. | 11-12-2009 |
20090277779 | MAGNETIC FIELD GENERATING APPARATUS, MAGNETIC FIELD GENERATING METHOD, SPUTTERING APPARATUS, AND METHOD OF MANUFACTURING DEVICE - A magnetic field generating apparatus includes a magnet assembly group including at least three magnet assemblies arranged along a straight line, each of the magnet assemblies including a permanent magnet, spilt yokes which are formed by magnetic members and are placed to surround the outer surface of the permanent magnet, and nonmagnetic members located between the yokes. | 11-12-2009 |
20090283400 | MICROWAVE-ASSISTED ROTATABLE PVD - Disclosed invention uses a coaxial microwave antenna to enhance ionization in PVD or IPVD. The coaxial microwave antenna increases plasma density homogeneously adjacent to a sputtering cathode or target that is subjected to a power supply. The coaxial microwave source generates electromagnetic waves in a transverse electromagnetic (TEM) mode. The invention also uses a magnetron proximate the sputtering cathode or target to further enhance the sputtering. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency. The target comprises dielectric materials, metals, or semiconductors. The target also has a cross section being substantially symmetric about a central axis that the target rotates around. The target may have a substantially circular or annular a cross section. | 11-19-2009 |
20090288943 | THIN FILM BATTERIES AND METHODS FOR MANUFACTURING SAME - A method of fabricating a layer of a thin film battery comprises providing a sputtering target and depositing the layer on a substrate using a physical vapor deposition process enhanced by a combination of plasma processes. The deposition process may include: (1) generation of a plasma between the target and the substrate; (2) sputtering the target; (3) supplying microwave energy to the plasma; and (4) applying radio frequency power to the substrate. A sputtering target for a thin film battery cathode layer has an average composition of LiM | 11-26-2009 |
20090288944 | SPUTTERING APPARATUS AND METHOD OF MANUFACTURING SOLAR BATTERY AND IMAGE DISPLAY DEVICE BY USING THE SAME - A sputtering apparatus of a continuous system that a first target | 11-26-2009 |
20090294278 | SPUTTERING METHOD AND APPARATUS - A sputtering method deposits a film on a substrate by controlling a magnetic field parallel to a surface of a target so that the magnetic field at a part of the target, other than parts of the target which are sputtered during a deposition mode in which a deposition process is performed with respect to the substrate, has an intensity lower than an arbitrary intensity at the other parts during the deposition mode and has an intensity higher than or equal to the arbitrary intensity during a standby mode in which the deposition process is not performed. A redeposited film which is deposited on the part of the target during the deposition mode is removed by performing a sputtering during the standby mode. | 12-03-2009 |
20090308732 | APPARATUS AND METHOD FOR UNIFORM DEPOSITION - Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values. | 12-17-2009 |
20090308733 | Thermal Barrier Coating Compositions, Processes for Applying Same and Articles Coated with Same - A process of coating an article includes the steps of (1) forming a layer of a ceramic based compound on an article; (2) providing a solution containing a metal as a particulate having a diameter of about 10 nanometers to about 1000 nanometers and present in an amount of about 25 percent to about 50 percent by volume of the solution; (3) contacting the ceramic based compound layer with the solution; (4) drying the article; and (5) optionally repeating steps (3) and (4). | 12-17-2009 |
20090314633 | ELECTRON BEAM ENHANCED LARGE AREA DEPOSITION SYSTEM - This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters. | 12-24-2009 |
20090321248 | LOW DAMAGE SPUTTERING SYSTEM AND METHOD - A sputtering system includes a disk-shaped target concentric with an annular anode in a reaction chamber. A thermally-sensitive sample is arranged in the reaction chamber so as to receive material sputtered from the target. The thermally-sensitive sample can be a soft tissue biological specimen. A magnet is arranged proximal to the sample within the reaction chamber. The magnet can be a U-shaped magnet or one or more bar magnets. During sputtering from the target, the magnetic field of the magnet deflects the trajectory of secondary electrons generated by the sputtering process, thereby protecting the sample from heating and damage. | 12-31-2009 |
20100000855 | Film Forming Apparatus and Method of Forming Film - Provided is a film forming apparatus and a film forming method that are capable of enhancing film property uniformity and improving productivity. A film forming apparatus ( | 01-07-2010 |
20100006420 | INLINE INTERLAYER HEATER APPARATUS - An apparatus for making a magnetic recording medium, including a quartz lamp within a sputtering chamber to heat the medium between the application of layers and without disruption to the vacuum integrity of the sputtering system. A process using the apparatus for manufacturing the magnetic recording medium is also claimed. | 01-14-2010 |
20100006421 | Processing Tubular Surfaces Using Double Glow Discharge - A method of sputtering a component includes positioning a conductive substrate into a vacuum chamber, wherein the conductive substrate is tubular and has a surface. A source electrode including a source material may be inserted into the conductive substrate. A first bias voltage ΔV | 01-14-2010 |
20100006422 | SPUTTERING SYSTEM AND METHOD FOR DEPOSITING THIN FILM - A sputtering system for depositing a thin film on the surface of a disc substrate in which high precision positioning of an inner mask and an outer mask is facilitated. The sputtering system has a mask member placed on the surface of the substrate mounted on a substrate holder to cover a partial region on the surface of the substrate. A thin film is deposited by sputtering in a region on the surface of the substrate not covered by the mask member. A section for carrying in and carrying out the substrate has mechanically holds and releases the substrate holder mounting the substrate, and mechanically holds and releases the mask member. | 01-14-2010 |
20100006423 | MAGNETIC FIELD GENERATION CONTROL UNIT AND MAGNETRON SPUTTERING APPARATUS AND METHOD USING THE SAME - A magnetic field generation control unit and a magnetron sputtering apparatus and method using the magnetic field generation control circuit. The magnetic field generation control unit includes a magnetic field generator for providing a specific magnetic field to a target consisting of a metal material to be deposited on a substrate, and a magnetic field generator control module electrically connected with the magnetic field generator, receiving an electrical signal from outside, and selectively supplying a current capable of generating the magnetic field to the magnetic field generator. The target is prevented from being magnetized when a sputtering process is not performed, and the magnetic field is generated from the target when the process is performed. Consequently, it is possible to perform uniform deposition on the substrate. | 01-14-2010 |
20100012481 | DEPOSITION SYSTEM HAVING IMPROVED MATERIAL UTILIZATION - A substrate processing system includes a processing chamber that can house a substrate therein; a target comprises a sputtering surface in the processing chamber, wherein the substrate is configured to receive material sputtered off the sputtering surface; a magnetron positioned adjacent to the target, wherein the magnetron can produce two erosion grooves separated by a distance S on the sputtering surface, wherein at least one of the two erosion grooves is characterized by an erosion width W; and a first transport mechanism that can move the magnetron in N steps along a travel path in a first direction. N is an integer. The magnetron can stop at each of the N steps to allow materials to be sputtered off the sputtering surface and to be deposited on the substrate. The N steps have substantially the same step size. The step size is approximately equal to the erosion width W. | 01-21-2010 |
20100018854 | TRIM MAGNETS TO ADJUST EROSION RATE OF CYLINDRICAL SPUTTER TARGETS - A cylindrical magnetron sputtering apparatus includes a rotating cylindrical sputtering target, a non-rotating magnet structure within the cylindrical sputtering target and at least one non-rotating trim magnet adjacent an end of the magnet structure. The trim magnets are manipulated during operation of the apparatus to alter a magnetic field produced by the magnet structure within the cylindrical sputtering cathode. As a result the shape of a racetrack discharge plasma formed at an end of the sputtering target is altered such that the formation of an erosion groove is avoided. | 01-28-2010 |
20100018855 | INLINE CO-SPUTTER APPARATUS - Disclosed is an apparatus and process within a pass-by sputtering chamber, in which standard cathodes and two or more specially-sized cathodes within the sputtering chamber, mounted colinear with the direction of travel of substrates within the sputtering chamber, enabling performance of rapid adjustment of material deposited on a substrate. | 01-28-2010 |
20100025229 | Apparatus and method for sputtering target debris reduction - Certain example embodiments relate to techniques for reducing the amount of debris being formed on the surface of planar sputtering targets. More particularly, a coating may be applied to the sputtering material in areas where sputtering substantially does not occur (typically inside and outside of a racetrack) in certain example embodiments. The coating optionally may be cured. In certain example embodiments, the coating may be include inorganic materials or materials that resist decomposition in a severely oxidizing environment, and/or are electrically non-conductive materials. For example, the coating may be a cured-form sol-gel comprising, for example, silicon oxide, titanium oxide, and/or the like. The coating substantially encapsulates the target material where sputtering substantially does not occur, thus reducing the amount of debris that is created during sputter coating. | 02-04-2010 |
20100025230 | Vacuum Treatment Apparatus, A Bias Power Supply And A Method Of Operating A Vacuum Treatment Apparatus - A vacuum treatment apparatus ( | 02-04-2010 |
20100032289 | METHOD FOR ULTRA-UNIFORM SPUTTER DEPOSITION USING SIMULTANEOUS RF AND DC POWER ON TARGET - In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target. | 02-11-2010 |
20100044212 | VERTICALLY STANDING IONIC POLYMER-METAL COMPOSITE - A vertically standing IPMC includes a substrate, a first electrode positioned substantially vertical with respect to an upper surface of the substrate, a second electrode positioned substantially vertical with respect to the upper surface of the substrate and disposed opposite to the first electrode, and an ionic polymer film interposed between the first electrode and the second electrode and standing substantially vertical with respect to the upper surface of the substrate. | 02-25-2010 |
20100044213 | COATING CHAMBER WITH A MOVEABLE SHIELD - The present invention refers to a method of operating a coating chamber as well as a coating chamber comprising a coating source, a transport device for moving a substrate carrier adapted to be able to carry a substrate to be coated into at least one coating position with respect to the coating source, so that the substrate may be coated, and at least one first shield being arranged in an area between the coating position of the substrate and the coating source to prevent coating of areas other than the surface of the substrate to be coated, wherein the first shield comprises a moving apparatus and a coupling device for coupling the first shield and the substrate carrier, so that first shield and substrate carrier are movable together. | 02-25-2010 |
20100051445 | Coating Apparatus For The Coating Of A Substrate, As Well As A Method For The Coating Of A Substrate - The present invention relates to a vaporization apparatus ( | 03-04-2010 |
20100065417 | Methods for forming superconducting conductors - A method for producing a superconducting conductor is disclosed, including providing a substrate, depositing a buffer film having a biaxial texture to overlie the substrate by reactive sputtering, and depositing a superconducting layer to overlie the buffer film. Deposition of the buffer film is carried out by exposing the substrate along a deposition zone to a material plume generated by bombarding a target in the presence of a magnetic field, the deposition zone having a length of at least 1.0 m. The assist ions may be generated from a gridless ion source. The buffer film may have a biaxial texture having an out-of-plane crystallographic texture represented by a mosaic spread of not greater than 30°. | 03-18-2010 |
20100072057 | PROCESS FOR FORMING A CERAMIC OXIDE MATERIAL WITH A PYROCHLORE STRUCTURE HAVING A HIGH DIELECTRIC CONSTANT AND IMPLEMENTATION OF THIS PROCESS FOR APPLICATIONS IN MICROELECTRONICS - The invention relates to a process for forming a lead-based ceramic oxide dielectric material comprising at least one pyrochlore crystalline phase, which process comprises the following steps: a) a step of depositing at least one amorphous layer of said lead-based ceramic oxide material on a substrate; and b) a crystallization annealing step carried out on said amorphous layer at a temperature not exceeding 550° C., by means of which a lead-based ceramic oxide dielectric material comprising at least one pyrochlore phase is obtained. Application to the fabrication of capacitors on integrated circuits. | 03-25-2010 |
20100078312 | Sputtering Chamber Having ICP Coil and Targets on Top Wall - A vacuum chamber has multiple wafer positions, and the wafers are positioned by a rotating pallet. Above a wafer position in the chamber there may be a sputtering target, a flat inductively coupled plasma (ICP) coil for etching the wafer and/or promoting sputtering, and a TEOS vapor outlet for forming an oxide film on the wafer. As the pallet rotates, a wafer may first have deposited a thin layer of oxide on walls of a via hole at the TEOS position. A metal layer may then be sputtered in the via hole at the sputtering position, and any pinch-off material may be etched away at an etching position. A magnet behind each target scans back and forth behind the target. Vertical magnet walls substantially surround a sputtering target for confining the sputtered material to an angle that is more normal to the wafer than prior art trajectories to fill narrower vias. | 04-01-2010 |
20100078313 | SPUTTERING APPARATUS AND METHOD OF THIN FILM FORMATION - The present invention provides a sputtering apparatus and a method of thin film formation, whereby a film having quality superior in uniformity even for relatively large substrates can be obtained and the generation of particles and nodules is suppressed. The sputtering apparatus of the present invention includes: a vacuum vessel ( | 04-01-2010 |
20100089743 | APPARATUS FOR TREATING SUBSTRATES - Apparatus for coating a substrate with a material in a chamber subject, during use, to substantial evacuation, which includes a coating station within the chamber for coating a substrate by sputtering and/or by evaporation; at least one treating station disposed in serial with the coating station and equipped with a plasma treater incorporating a plasma generator in sufficient proximity to the substrate to treat the substrate; a magnetic device for generating a magnetic field; at least one cylindrical electrode surrounding the magnetic device, the plasma treater incorporates a device for rotating the electrode about its longitudinal axis. | 04-15-2010 |
20100096254 | DEPOSITION SYSTEMS AND METHODS - A system for depositing material on a substrate using plasma and a target. The target may include the material and/or a second material. The system may include a plasma source for providing the plasma. The system may also include a chamber for containing the substrate, the plasma, and the target during deposition of the material on the substrate. The system may also include a first magnet disposed above the chamber or disposed below the chamber for influencing distribution of the plasma inside the chamber. At least one of a bottom surface of the magnet and a top surface of the magnet is at an angle with respect to an imaginary axis of the plasma source. A circular cross section of the plasma source is symmetrical with respect to the imaginary axis of the plasma source. The angle is greater than 0 degree and less than 90 degrees. | 04-22-2010 |
20100116643 | DEVICE FOR GENERATING COLD PLASMA IN A VACUUM CHAMBER AND USE OF SAID DEVICE FOR THERMO-CHEMICAL PROCESSING - A device for generating a cold plasma in a vacuum enclosure includes a cathode body having hollow chambers for confining the plasma. Magnets are placed around each hollow chamber for creating a magnetic field forcing electrons to rotate about the field lines. The cathode body cooperates with an element for circulating a coolant to extract the heat generated by an intense ion bombardment at each of the hollow chambers. | 05-13-2010 |
20100116644 | DEVICE FOR CARRYING OUT A PLASMA-ASSISTED PROCESS - A device for carrying out a plasma enhanced process includes, within a vacuum chamber, at least one magnetron electrode ( | 05-13-2010 |
20100126848 | MAGNETRON SPUTTERING APPARATUS - A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly. | 05-27-2010 |
20100155225 | METHOD OF FORMING THIN FILM AND APPARATUS FOR FORMING THIN FILM - A plurality of targets are disposed in parallel with, and at a given distance to, one another. In case a predetermined thin film is formed by sputtering, the occurrence of non-uniformity in the film thickness distribution and the film quality distribution can be restricted. During the time when electric power is charged to a plurality of targets which are disposed inside a sputtering chamber so as to lie opposite to the process substrate, and are disposed at a predetermined distance from, and in parallel with, one another, thereby forming a predetermined thin film by sputtering, each of the targets is reciprocated at a constant speed in parallel with the process substrate. Also, magnet assemblies that form tunnel-shaped magnetic flux in front of each target are reciprocated at a constant speed in parallel with each of the targets. When each of the targets has reached a turning position of the reciprocating movement, the reciprocating movement of each of the targets is stopped for a predetermined period of time. | 06-24-2010 |
20100155226 | ROTATABLE MAGNETRON SPUTTERING WITH AXIALLY MOVABLE TARGET ELECTRODE TUBE - A new and useful rotatable sputter magnetron assembly is provided, that addresses the issue of uneven wear of the target electrode tube. According to the principles of the present invention, a rotatable sputter magnetron assembly for use in magnetron sputtering target material onto a substrate comprises a. a longitudinally extending tubular shaped target electrode tube having a longitudinal central axis, b. the target electrode tube extending about a magnet bar that is configured to generate a plasma confining magnetic field adjacent the target electrode tube, c. the magnet bar being held substantially stationary within the target electrode tube, and d. the target electrode tube supported for rotation about its longitudinal central axis and for axial movement along its longitudinal central axis, so that wear of the target electrode tube can be controlled by moving the target electrode tube axially during magnetron sputtering of the target material. | 06-24-2010 |
20100155227 | SPUTTERING APPARATUS AND FILM FORMING METHOD - The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode ( | 06-24-2010 |
20100155228 | SPUTTERING APPARATUS AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - A sputtering apparatus includes a rotatable rotary member to which a target is attached, connection terminals, and feeding terminals. The connection terminals are arranged on the end portion of the rotary member in a direction along the axis of rotation of the rotary member, and are electrically connected to the target. The feeding terminals supply electric power to the target via the connection terminals. When the rotary member is rotated while the feeding terminals are in contact with the end portion of the rotary member, the electrical connection or insulation state between the feeding terminals and connection terminals is switched. | 06-24-2010 |
20100155229 | SPUTTERING APPARATUS AND FILM DEPOSITION METHOD - The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode ( | 06-24-2010 |
20100163404 | Shadow Masks for Patterned Deposition on Substrates - A shadow mask for patterning a substrate during a semiconductor process. In one implementation, the shadow mask may include a plate having openings in the shape of individual dies on the substrate and having an area slightly greater than the substrate, and a layer having openings in the shape of features patterned on the substrate, wherein the layer is coupled to a bottom surface of the plate by an epoxy. | 07-01-2010 |
20100163405 | METHOD AND DEVICE FOR PRODUCING THREE-DIMENSIONAL OBJECTS - The invention concerns a method for producing three-dimensional objects ( | 07-01-2010 |
20100170780 | MAGNET BAR SUPPORT SYSTEM - An apparatus and method for controlling local deposition rate in a physical vapor deposition process is provided. A magnet bar assembly is disposed inside a sputtering target. The magnet bar assembly comprises a magnet bar, a support member aligned with the magnet bar, and one or more sliding brackets that couple the support member to the magnet bar. Each sliding bracket compresses the magnet bar to the support member, allowing the use of spacers between the support member and the magnet bar to adjust local proximity of the magnet bar to the plasma bombarding the target. | 07-08-2010 |
20100170781 | Filtered Cathodic Arc Deposition Method and Apparatus - An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma source, has at least one deflecting electrode mounted on one or more walls of the plasma duct. In one embodiment an isolated repelling or repelling electrode is positioned in the plasma duct downstream of the deflecting electrode where the tangential component of a deflecting magnetic field is strongest, connected to the positive pole of a current source which allows the isolated electrode current to be varied independently and increased above the level of the anode current. The deflecting electrode may serve as a getter pump to improve pumping efficiency and divert metal ions from the plasma flow. In a further embodiment a second arc source is activated to coat the substrates while a first arc source is activated, and the magnetic deflecting system for the first arc source is deactivated to confine plasma to the cathode chamber but permit electrons to flow into the coating chamber for plasma immersed treatment of the substrates. A load lock shutter may be provided between the plasma duct and the coating chamber further confine the plasma from the first arc source. | 07-08-2010 |
20100175988 | Apparatus and method for making sputtered films with reduced stress asymmetry - Certain example embodiments of this invention relate to techniques for reducing stress asymmetry in sputtered polycrystalline films. In certain example embodiments, sputtering apparatuses that include one or more substantially vertical, non-conductive shield(s) are provided, with such shield(s) helping to reduce the oblique component of sputter material flux, thereby promoting the growth of more symmetrical crystallites. In certain example embodiments, the difference between the travel direction tensile stress and the cross-coater tensile stress of the sputtered film preferably is less than about 15%, more preferably less than about 10%, and still more preferably less than about 5%. | 07-15-2010 |
20100175989 | DEPOSITION APPARATUS, DEPOSITION SYSTEM AND DEPOSITION METHOD - A deposition system is provided to avoid cross contamination in each layer formed in a manufacturing process of organic electroluminescent device and the like, and to reduce footprint and to enhance productivity. Provided is a deposition apparatus | 07-15-2010 |
20100175990 | DUMMY SUBSTRATE, AND START METHOD OF, RETENTION/MODIFICATION METHOD OF DEPOSITION CONDITION, AND STOP METHOD OF DEPOSITION APPARATUS USING SAME - This dummy substrate is for use in an inline reactive sputtering apparatus. The main unit thereof is made of a rectangular-plate-like frame structure in which an opening portion in a rectangular shape is formed in a metal plate in a similar shape. It is configured such that a contact portion of a carrier with the main unit is covered with the main unit. As a result, even while the sputtering apparatus is in operation, there is no possibility of the occurrence of undesirable situations such as glass cracking, making it possible to significantly increase the number of times the dummy substrate is used. Furthermore, the dummy substrate continues to cover the contact portion with the carrier. Thereby, it is possible to prevent deposition of a substance left in a sputter deposition chamber, especially a compound thin film, on the contact portion of the carrier with the substrate. Therefore, it is possible to prevent undesirable situations such as an abnormal discharge due to the deposition of the compound thin film. As a result of these, it is possible to start (activate) an apparatus that deposits a compound thin film by the sputtering method, retain and modify a deposition condition in the apparatus, and stop (deactivate) the apparatus in a shorter time, and more efficiently and at a lower cost than before. | 07-15-2010 |
20100181187 | CHARGED PARTICLE BEAM PVD DEVICE, SHIELDING DEVICE, COATING CHAMBER FOR COATING SUBSTRATES, AND METHOD OF COATING - A charged particle beam PVD device is provided, including a target of coating material inside of a casing, a vapor aperture provided in the casing, and a shielding device provided adjacent to the vapor aperture, the shielding device being on floating potential. | 07-22-2010 |
20100206713 | PZT Depositing Using Vapor Deposition - Methods and apparatus for sputtering a target material, such as PZT, can include positioning a conductive grid between a target and a substrate. The target, the substrate, and a sputtering gas can be contained in a chamber, and power of a first RF source can be applied so as to maintain a plasma in the chamber. Power of a second RF source can be applied to the conductive grid. Target material can be sputtered from the target onto the substrate. Positioning of the conductive grid and application of power by the second RF source can affect properties of sputter deposition of the target material. For example, the second RF source and the conductive grid can be part of a capacitive circuit configured such that voltage change in the capacitive circuit affects properties of the sputtering gas and, in turn, properties of a sputter deposition process. | 08-19-2010 |
20100206714 | PHYSICAL VAPOR DEPOSITION WITH PHASE SHIFT - A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate. | 08-19-2010 |
20100206715 | SPUTTERING APPARATUS, DOUBLE ROTARY SHUTTER UNIT, AND SPUTTERING METHOD - Two shutter plates form a double rotary shutter mechanism. A cylindrical second deposition shield is interposed between the first shutter plate disposed on the side of a target and the second shutter plate so as to surround a first opening formed in the first shutter plate. A cylindrical first deposition shield is interposed between a sputtering cathode and the first shutter plate so as to surround the front surface region of the target. This makes it possible to prevent a sputtering substance from passing through the gaps between the first shutter plate and the second shutter plate and between the first shutter plate and the sputtering cathode, and to, in turn, prevent generation of any cross-contamination. | 08-19-2010 |
20100213047 | HIGH-FREQUENCY SPUTTERING DEVICE - Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder. | 08-26-2010 |
20100230273 | FILM FORMING APPARATUS AND FILM FORMING METHOD - A film forming apparatus and a film forming method includes: a vacuum chamber; a holder for a film formation object, the holder being rotatably provided in the vacuum chamber; and a sputter source capable of holding a plurality of targets, the sputter source being spinnably provided so that the opposed area of the target with respect to the film formation object can be varied. They can perform uniform and efficient film formation in accordance with the size of a film formation object using a simple configuration, with less possibility of contamination and easy maintenance. | 09-16-2010 |
20100230274 | MINIMIZING MAGNETRON SUBSTRATE INTERACTION IN LARGE AREA SPUTTER COATING EQUIPMENT - A method and apparatus for performing physical vapor deposition on a large-area substrate is provided. One or more sputtering targets are disposed in a chamber, with each sputtering target comprising a magnet assembly. Each magnet assembly may comprise a plurality of magnet units aligned such that the magnetic polarity of the magnet units is complementary, and the magnetic fields of the magnet units couple. Each magnet unit thus comprises a plurality of magnets arranged such that the polarity of each magnet is opposite that of adjacent magnets in the same magnet unit. Alternately, each magnet assembly may comprise a plurality of magnets individually oriented to complement the magnetic fields of its neighbors. A substrate support having an insulating surface may also be provided. | 09-16-2010 |
20100236919 | High-Power Pulsed Magnetron Sputtering Process As Well As A High-Power Electrical Energy Source - The invention relates to a high-power pulsed magnetron sputtering process ( | 09-23-2010 |
20100243428 | ROTARY CATHODE FOR MAGNETRON SPUTTERING APPARATUS - A rotary cathode for a magnetron sputtering apparatus is disclosed. The rotary cathode comprises a rotatable target cylinder, and a non-rotatable interior structure in the target cylinder. The interior structure has an outer surface and an inner passageway. An outer passageway is defined between an inner surface of the target cylinder and the outer surface of the interior structure. An end cap is affixed at a distal end of the target cylinder. A rotating aperture is adjacent to an inner surface of the target cylinder at the distal end thereof, with the rotating aperture configured to direct a fluid toward the inner surface at the distal end. A fluid pathway is at least partially defined by the end cap, with the pathway providing fluid communication between the outer passageway and the inner passageway through the rotating aperture. | 09-30-2010 |
20100252416 | Sputtering Target for PVD Chamber - Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber. | 10-07-2010 |
20100252417 | HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS - Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber. | 10-07-2010 |
20100258432 | SPUTTERING APPARATUS, SPUTTER DEPOSITION METHOD, AND ANALYSIS APPARATUS - A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field. | 10-14-2010 |
20100264016 | VERY LOW PRESSURE HIGH POWER IMPULSE TRIGGERED MAGNETRON SPUTTERING - A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface. | 10-21-2010 |
20100270144 | High Power Pulse Magnetron Sputtering For High Aspect-Ratio Features, Vias, and Trenches - A plasma source includes a chamber for containing a feed gas. An anode is positioned in the chamber. A segmented magnetron cathode comprising a plurality of electrically isolated magnetron cathode segments is positioned in the chamber proximate to the anode. A power supply is electrically connected to an electrical input of a switch. A respective one of the plurality of electrical outputs of the switch is electrically connected to a respective one of the plurality of magnetron cathode segments. The power supply generates a train of voltage pulses that ignites a plasma from the feed gas. Individual voltage pulses in the train of voltage pulses are routed by the switch in a predetermined sequence to at least two of the plurality of magnetron cathode segments. | 10-28-2010 |
20100294649 | SPUTTERING FILM FORMING METHOD AND SPUTTERING FILM FORMING APPARATUS - In a sputtering film forming method of the invention, a magnetron cathode with a magnet arranged on a back surface side of a target is used, a substrate is transported in a first direction on a front surface side of the target, and the magnet is moved in reciprocating motion in the first direction and a second direction which is opposite to the first direction, thereby performing sputtering film formation on the substrate. Sputtering film formation is performed where a speed of the movement of the magnet in the first direction and a speed of the movement of the magnet in the second direction are different from each other. | 11-25-2010 |
20100326815 | High Power Pulse Ionized Physical Vapor Deposition - Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target. | 12-30-2010 |
20110005919 | SPUTTERING TARGET TEMPERATURE CONTROL UTILIZING LAYERS HAVING PREDETERMINED EMISSIVITY COEFFICIENTS - A sputter coating apparatus for sputter coating a substrate in a processing chamber includes a target of sputter coating material supported within the processing chamber. The target has a sputtering surface and a back surface. The target is affixed to a backing plate such that the back surface of the target is disposed adjacent to a first surface of the backing plate. The backing plate is in fluid communication with a source of cooling fluid. The target back surface has a first layer selected to have a high thermal emissivity coefficient. The backing plate first surface carries a second layer having a high emissivity coefficient. The target back surface first layer and the backing plate first surface second layer provide enhanced heat transfer between the target and the backing plate via thermal radiation. | 01-13-2011 |
20110017588 | FABRICATION PROCESS FOR A THICK FILM BY MAGNETRON SPUTTERING - A method for forming a thick film by magnetron sputtering is provided. The method includes forming a first thin film having residual compressive stress on a board by magnetron sputtering, forming a second thin film having tensile residual stress on the first thin film by magnetron sputtering, and depositing the thick film by repeating the forming of the first and second thin films for more than one time, so that the overall residual stress is controlled within a predetermined range. According to the method, a thick film of same or different materials can be formed, while the overall stress of the thick film is controlled within an acceptable range. | 01-27-2011 |
20110024284 | Sputtering apparatus including cathode with rotatable targets, and related methods - Certain example embodiments relate to sputtering apparatuses that include a plurality of targets such that a first one or ones of target(s) may be used for sputtering in a first mode, while a second one or ones of target(s) may be used for sputtering in a second mode. Modes may be switched in certain example embodiments by rotating the position of the targets, e.g., such that one or more target(s) to be used protrude into the main chamber of the apparatus, while one or more target(s) to be unused are recessed into a body portion of a cathode of (e.g., integrally formed with) the sputtering apparatus. The targets may be cylindrical magnetic targets or planar targets. At least one target location also may be made to accommodate an ion beam source. | 02-03-2011 |
20110031108 | SPUTTERING DEPOSITION METHOD AND APPARATUS - A sputtering deposition method is utilized by a sputtering deposition apparatus including a first chamber, a second chamber, a first carrier, and a second carrier. Some first substrates are positioned in the first carriers in the first chamber for heating. The first carriers in the first chamber and the second carriers in the second chamber are exchanged. The first substrates in the second chamber are sputtered. The second carriers in the first chamber and the first carriers in the second chamber are exchanged. The first substrates in the first chamber are taken out. | 02-10-2011 |
20110031109 | DESIGN AND USE OF DC MAGNETRON SPUTTERING SYSTEMS - Field-enhanced sputtering targets are disclosed that include: a core material; and a surface material, wherein at least one of the core material or the surface material has a field strength design profile and wherein the sputtering target comprises a substantially uniform erosion profile. Target assembly systems are also disclosed that include a field-enhanced sputtering target; and an anodic shield. Additionally, methods of producing a substantially uniform erosion on a sputtering target are described that include: providing an anodic shield; providing a cathodic field-enhanced target; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the cathodic field-enhanced target. | 02-10-2011 |
20110036707 | SPUTTERING METHOD - When sputtering method is performed by disposing a plurality of targets in parallel with each other, and by charging power to the targets through a plurality of bipolar pulsed power supplies, power can be charged with higher accuracy to the targets while being subject to less effect by the switching noises by a simple control. In a sputtering method in which, for each of targets making a pair, power is supplied in a bipolar pulsed mode by switching ON or OFF of each of the switching elements SW | 02-17-2011 |
20110048926 | MAGNETRON SPUTTERING APPARATUS AND MAGNETRON SPUTTERING METHOD - The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate. | 03-03-2011 |
20110062015 | COATING APPARATUS AND COATING METHOD - An apparatus for coating a substrate with a layer of inhomogeneous but continuous thickness is provided. The apparatus may include a holding device configured to hold a substrate to be coated; a coating device comprising at least one coating source for providing a coating material, which is arranged at a distance from the holding device; and at least one magnetizing device configured to generate a predetermined magnetic field in the region between the substrate to be coated and the coating source. The magnetizing device may be arranged on the opposite side of the holding device to the coating source. | 03-17-2011 |
20110079508 | METHOD FOR COATING A SUBSTRATE AND COATER - A method is provided for coating substrates with at least one cathode assembly having a rotatable target, the rotatable target being provided with at least one magnet assembly positioned there within. The method includes providing a potential difference between the substrate and the rotatable target that is varied over time during coating. Further, the method may include positioning the magnet assembly with respect to the rotatable target so that the magnet assembly is asymmetrically aligned with respect to a plane perpendicularly extending from the substrate to the axis of the rotatable target for a predetermined first time interval. The magnet assembly is then moved to a second position that is also asymmetrically aligned. Further, a coater for coating substrates is provided including a cathode assembly with a rotatable curved target and two magnet assemblies positioned within the rotatable curved target. | 04-07-2011 |
20110079509 | SPUTTERING SYSTEM FOR DEPOSITING THIN FILM AND METHOD FOR DEPOSITING THIN FILM - A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders | 04-07-2011 |
20110089023 | PLASMA PROCESSING APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the chamber by applying AC power to the chamber. The conductive members connect the substrate stage and the side wall of the chamber by surrounding the plasma space between the substrate stage and the electrode in plasma formation, and at least some of them are separated by being moved by a driving mechanism so as to form an opening for loading a substrate onto the substrate stage while no plasma is being formed. The deposition shield covers the surfaces of the conductive members on the side of the plasma space. | 04-21-2011 |
20110089024 | METHOD AND APPARATUS FOR IMPROVED HIGH POWER IMPULSE MAGNETRON SPUTTERING - A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 μs. | 04-21-2011 |
20110100799 | SPUTTER DEPOSITION SYSTEM AND METHOD - A sputter deposition system adapted for depositing a thin film onto a substrate surface is provided. The system includes a cathode assembly having at least two cathode targets opposing the substrate surface and adapted for providing cathode material for forming the thin film. A plasma source is adapted for generating a plasma for sputtering cathode material off the at least two cathode targets. A magnetic field generator is adapted for providing a magnetic field which is controllable independently of the plasma source such that such that a difference between high deposition rate portions and low deposition rate portions is compensated by the action of the magnetic field on charged particle movements. | 05-05-2011 |
20110100800 | Rectangular Filtered Vapor Plasma Source and Method of Controlling Vapor Plasma Flow - The invention provides an arc coating apparatus having a steering magnetic field source comprising steering conductors ( | 05-05-2011 |
20110114473 | MAGNETRON SPUTTERING APPARATUS AND MAGNETRON SPUTTERING METHOD - A magnetron sputtering apparatus of the invention includes: a sputtering chamber in which a target can be opposed to an object to be subjected to film formation; a gas introduction port facing the sputtering chamber; a magnet provided outside the sputtering chamber and opposite to the target and being rotatable about a rotation center which is eccentric with respect to center of the magnet; a sensor configured to detect a circumferential position of the magnet in a plane of rotation of the magnet; and a controller configured to start voltage application to the target to cause electrical discharge in the sputtering chamber on the basis of the circumferential position of the rotating magnet and gas pressure distribution in the sputtering chamber. | 05-19-2011 |
20110127156 | CHAMBER FOR PROCESSING HARD DISK DRIVE SUBSTRATES - An apparatus for forming a magnetic pattern in a magnetic storage substrate. A chamber comprises a chamber wall that defines an internal volume, a substrate support in the internal volume of the chamber, a gas distributor disposed in a wall region of the chamber facing the substrate support, a compact energy source for ionizing a portion of the process gas provided to the chamber, and a throttle valve having a z-actuated gate member with a sealing surface for covering an outlet portal of the chamber. Ions are accelerated toward the substrate support by an electrical bias, amplifying the ion density of the process gas. A substrate disposed on the substrate support is bombarded by the ions to alter a magnetic property of the substrate surface. | 06-02-2011 |
20110147199 | SPUTTERING APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A sputtering apparatus comprises a substrate holder, and a screening member configured to screen a substrate mount surface of a surface of the substrate holder. The screening member comprises a first screening member configured to rotate about an axis in a first direction perpendicular to the substrate mount surface and screen at least a first area, and a second screening member configured to rotate about the axis and screen at least a second area. The first and second screening members are configured to be rotated to move between a screening position at which the first screening member screens at least the first area and the second screening member screens at least the second area and a retreat position at which the first and second screening members retract from an area above the substrate mount surface and overlap each other. | 06-23-2011 |
20110155561 | REACTIVE SPUTTERING METHOD AND REACTIVE SPUTTERING APPARATUS - The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMn03 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used. | 06-30-2011 |
20110174608 | Method for forming a diamond-like carbon layer on air bearing surface of a slider - A method for forming a diamond-like carbon (DLC) layer on air bearing surface (ABS) of a slider, comprises steps of: providing sliders arranged in arrays, each slider having an ABS; forming a mixing layer in the ABS of the slider by depositing a first DLC layer on the ABS, the mixing layer consisting of the slider material and the first DLC layer material; removing the first DLC layer to make the mixing layer exposed; forming a second DLC layer on the mixing layer. | 07-21-2011 |
20110180389 | APPARATUS AND METHOD FOR PRETREATING AND COATING BODIES - The invention relates to an apparatus and a method for pretreating and coating bodies by means of magnetron sputtering. In a vacuum chamber having a metallic chamber wall ( | 07-28-2011 |
20110180390 | REDUNDANT ANODE SPUTTERING METHOD - A method is provided for coating a substrate with the aid of a magnetron cathode and two electrodes which are alternately impinged upon by a positive potential and a negative potential. Also disclosed is an assembly for coating a substrate, comprising a vacuum chamber, a magnetron cathode, two electrodes, and a voltage source. A negative potential is generated at a level that is no greater than the level of the cathode potential, thus preventing the electrode that is to be cleaned from being stripped to a greater extent than the same was coated in the previous half-wave. The magnetron cathode and the electrodes are connected to the voltage source via switching elements without being galvanically such that a negative and a positive voltage generated from the voltage source can be alternatively applied to the electrodes, the level of said voltage being no greater than the cathode voltage. | 07-28-2011 |
20110186420 | METHOD FOR RAPID DEPOSITION OF A COATING ON A SUBSTRATE - A process of depositing a coating on a substrate, the method comprising the steps of: (a) depositing material on a substrate by performing a cathodic Vacuum arc (CVA) deposition step; and (b) depositing material on a substrate by performing at least one of a chemical vapour deposition (CVD) step and a physical Vapour deposition (PVD) step that excludes CVA deposition, Wherein the thickness of the material deposited in step (b) is greater than the thickness of the material deposited in step (a). | 08-04-2011 |
20110186421 | TARGET ASSEMBLY FOR A MAGNETRON SPUTTERING APPARATUS, A MAGNETRON SPUTTERING APPARATUS AND A METHOD OF USING THE MAGNETRON SPUTTERING APPARATUS - To provide, in a magnetron sputtering apparatus for coating a substrate with a material of high magnetic permeability, for a sufficient trapping field of at least 24 kA/m (300 Oe) field strength above a target surface a target assembly consists of target plates ( | 08-04-2011 |
20110186422 | IN-MOULD MOLDING TOUCH MODULE AND METHOD FOR MANUFACTURING THE SAME - An in-mould molding touch module includes a plastic film, a touch circuit and a molding rind. The plastic film includes an inner surface and an outer surface for handling and touching. At least one region of the inner surface and a corresponding region of the outer surface define a touch area. The touch circuit is arranged on the inner surface in the touch area. The molding rind is integrated on the inner surface by an in-mould injecting mode to contain the touch circuit for forming a one-piece body. In addition, the invention also provides a method for manufacturing an in-mould molding touch module. | 08-04-2011 |
20110192715 | MAGNETRON SOURCE AND METHOD OF MANUFACTURING - A magnetron source comprises a target ( | 08-11-2011 |
20110209984 | Physical Vapor Deposition With Multi-Point Clamp - A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive, and a plurality of conductive electrodes attached to the clamp, each electrode configured to compress when contacted by the substrate. | 09-01-2011 |
20110209985 | Physical Vapor Deposition With Heat Diffuser - A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, and a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, and a heater to heat the substrate supported on the chuck. The chuck includes a body and a graphite heat diffuser supported on the body and configured to contact the substrate. | 09-01-2011 |
20110220488 | Apparatus and Method for Improved Darkspace Gap Design in RF Sputtering Chamber - Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield. | 09-15-2011 |
20110220489 | ROTATABLE TARGET, BACKING TUBE, SPUTTERING INSTALLATION AND METHOD FOR PRODUCING A ROTATABLE TARGET - A rotatable target for a sputtering installation and a method for producing a rotatable target are provided. The target includes a backing tube to which a target tube is shrink-fitted. The method includes setting a positive temperature difference between a target tube and a backing tube. The method further includes pulling the target tube over the backing tube while the temperature difference remains positive. Furthermore, a backing tube having a middle part with an outer lateral area and a notch extending in a longitudinal direction on the outer lateral area is provided. | 09-15-2011 |
20110220490 | Apparatus And Method Utilizing A Double Glow Discharge Plasma For Sputter Cleaning - The present disclosure relates to an apparatus and method utilizing double glow discharge for sputter cleaning of a selected surface. The surface may include the inner surface of a hollow substrate such as a tube which inner surface may then be coated via magnetron sputter deposition. | 09-15-2011 |
20110220491 | Electron-assisted deposition - Previous limitations in utilizing energetic vapor deposition means are addressed through the introduction of a novel means of vapor deposition, namely, an Electron-Assisted Deposition (EAD) process and apparatus. The EAD mode of film growth disclosed herein is generally achieved by, first, forming a magnetic field that possesses field lines that intersect electrically non-grounded first and second surfaces, wherein at least one surface is a workpiece, thereby forming a magnetic trap between first and second surfaces; second, introducing a high flux of electrons axially into the magnetic field existing between the first and second surfaces, so that the electrons form an electron-saturated space-charge in the space adjacent to the substrate, wherein plasma interactions with the substrate are substantially avoided, and modification of film growth processes is provided predominantly by electron—rather than plasma—bombardment. | 09-15-2011 |
20110226612 | METHOD AND DEVICE FOR REVERSING THE FEEDING OF SPUTTER COATING SYSTEMS IN CLEAN ROOMS - The invention relates to a method and to a device for reversing the feeding of a sputter coating system, particularly when coating a photovoltaic module, in clean rooms, having the following characteristics: a) a transport frame ( | 09-22-2011 |
20110233049 | SPUTTERING SYSTEM - The invention relates to a device ( | 09-29-2011 |
20110233050 | MAGNETIC LENSING TO IMPROVE DEPOSITION UNIFORMITY IN A PHYSICAL VAPOR DEPOSITION (PVD) PROCESS - A physical vapor deposition (PVD) system includes a chamber and a plurality of electromagnetic coils arranged around the chamber. First and second annular bands of permanent magnets are arranged around the chamber with poles oriented perpendicular to a magnetic field imposed by the electromagnetic coils. Each of the permanent magnets in the first annular band is arranged with poles having a first polarity closest to a central axis of the chamber. Each of the permanent magnets in the second annular band is arranged anti-parallel with respect to the permanent magnets in the first annular band. | 09-29-2011 |
20110240461 | DEPOSITION SYSTEM AND METHODS HAVING IMPROVED MATERIAL UTILIZATION - A method for substrate processing includes producing a magnetic field by a magnetron across the full width of a sputtering surface of a target in a first direction. The magnetron can produce two erosion grooves separated by a distance S on the sputtering surface. The method includes moving the magnetron continuously at a first speed by the distance S in a first segment along a linear travel path. The linear travel path is along a second direction perpendicular to the first direction. The method includes continuously sputtering a material off the sputtering surface and depositing the material on the substrate during the first segment, and moving the magnetron by the distance S in a second segment along the linear travel path at a second speed higher than the first speed without sputtering the material off the sputtering surface or sputtering materials off at significant lower rate. | 10-06-2011 |
20110247928 | SPUTTERING APPARATUS AND SPUTTERING METHOD - The sputtering apparatus has: a vacuum chamber in which a substrate is disposed; a cathode unit which is disposed inside the vacuum chamber so as to lie opposite to the substrate. The cathode unit has mounted a bottomed cylindrical target material 4 from a bottom side thereof into at least one recessed portion formed in one surface of a holder, and has assembled therein a magnetic field generator for generating a magnetic field in an inside space of the target material. The sputtering apparatus further has: an anode shield to which a positive electric potential is applied; a gas introduction device for introducing a sputtering gas into the vacuum chamber; a power supply for activating power to the cathode unit; a vertical magnetic field generator including coils disposed along a wall surface of the vacuum chamber about a reference axis connecting the cathode unit and the substrate, and a power supply; and a controller for switching on or off the introduction of the sputtering gas from the gas introduction device. | 10-13-2011 |
20110259732 | METHODS FOR HIGH-RATE SPUTTERING OF A COMPOUND SEMICONDUCTOR ON LARGE AREA SUBSTRATES - Methods are generally provided for sputtering thin films on individual substrates. Individual substrates can be conveyed into a vacuum chamber to draw a sputtering pressure that is less than about 50 mTorr. Then, the individual substrates can be conveyed into a sputtering chamber and past a planar magnetron continuously sputtering a target by an ionized gas at the sputtering pressure such that a thin film is formed on a surface of the individual substrate. The target is subjected to a high frequency power having a frequency from about 400 kHz to about 4 MHz at power levels of greater than about 1 kW. In one particular embodiment, the method can be generally directed to sputtering thin films on individual substrates defining a surface having a surface area of about 1000 cm | 10-27-2011 |
20110259733 | MAGNETIC FIELD CONTROL FOR UNIFORM FILM THICKNESS DISTRIBUTION IN SPUTTER APPARATUS - When a film is formed by using a sputter method, distribution variation due to a progress of target erosion generated during the film formation is suppressed, and film thickness distribution and resistance value distribution are corrected to an optimal state. In order to maintain the magnetic flux density formed on the target surface at a constant level, the distance between the target surface and the magnet surface (MT distance) is corrected in accordance with the progress of the target erosion. Further, two or more MT distances are set by a process recipe or the like while forming a thin film, and different distribution shapes are combined to form a near flat distribution shape. | 10-27-2011 |
20110266139 | FILM FORMING APPARATUS AND METHOD OF PRODUCING SUBSTRATE USING SAME - The present invention provides a film forming apparatus that forms a film on a substrate (s) | 11-03-2011 |
20120000765 | METHODS OF ARC DETECTION AND SUPPRESSION DURING RF SPUTTERING OF A THIN FILM ON A SUBSTRATE - Methods and systems of arc suppression during RF sputtering of a thin film from a semiconducting target onto a substrate are provided. During sputtering, an alternating current of RF frequency can be applied to a semiconducting target to form a plasma. Upon formation of an arc extending from the target, an arc signature can be detected, where the arc signature is simultaneously defined by decreasing plasma voltage from an initial sputtering plasma voltage to an arc plasma voltage and increasing reflective power from an initial sputtering reflective power to an arc reflective power. Upon identification of the arc signature, the alternating current can be temporarily interrupted to the semiconducting target to suppress the arc extending from the target. Thereafter, the alternating current from the electrical power supply can be reapplied to the semiconducting target. | 01-05-2012 |
20120012455 | Apparatus and Method for Detecting a State of a Deposition Apparatus - Apparatuses for deposition of one or more layers. In one aspect, an apparatus for deposition of one or more layers includes an anode; a cathode; a vacuum chamber including the anode and the cathode; a sensor configured to detect an electric potential between a section of the at least one anode and a section of the chamber. Furthermore, methods to monitor a device for deposition of one or more layers are also described. | 01-19-2012 |
20120024694 | Triangular Scanning Magnet in Sputtering Tool Moving Over Larger Triangular Target - A sputtering chamber contains a plurality of substantially triangular targets supported by a top wall. The targets have narrow ends pointing toward a center of the top wall. Above each target is a relatively small substantially triangular magnet. Each magnet is connected to a single central actuator that scans all magnets back and forth through an arc across its associated target. Each magnet is also movably connected to an arm connected to the central scanning actuator. A linear actuator moves each magnet up and down the arm simultaneously with the angular scanning movement. The combination of the simultaneous angular movement and linear movement (perpendicular to the arc) of the magnet causes each magnet to move only over a substantially triangular area corresponding to an area of an associated target. In one embodiment, the linear speed of the magnets is varied to achieve uniform erosion of the target. | 02-02-2012 |
20120080309 | SYSTEMS AND METHODS FOR FORMING A LAYER OF SPUTTERED MATERIAL - The present disclosure describes a method of coating a substrate, the method including forming a layer of sputtered material on the substrate. Forming the layer of sputtered material may include: sputtering material from at least one target over the substrate; varying the relative position between the at least one target and the substrate to a first position (I), which first position is maintained for a predetermined first time interval; and varying the relative position between the at least one target and the substrate to a second position (II), which second position is maintained for a predetermined second time interval. The present disclosure further describes a system for coating a substrate. | 04-05-2012 |
20120085638 | Multi-Station Sputtering and Cleaning System - A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating first pallet in the pre-cleaning chamber through a single entrance/exit port. After a batch cleaning, the robotic arm transfers the wafers one-by-one to a rotating second pallet in a sputtering chamber through a single entrance/exit, where the wafers are subjected to a batch sputtering process. After the sputtering process, the robotic arm transfers the wafers one-by-one to a load lock. | 04-12-2012 |
20120097525 | METHOD AND APPARATUS TO CONTROL IONIC DEPOSITION - A sputtering source having a bias field generated between the substrate and the sputtering source. A conductive louver or grid arrangement is positioned in front of the substrate, and is biased by an RF or DC source. The substrate itself may or may not be biased, as needed. The conductive louvers are rotatable to also function as shutters or collimator to control the flux of the deposited species. The shutter arrangement is mounted onto the sputtering opening of a facing target source (FTS). The shutter is biased by an RF or DC source and the applied power and rotation position of each slat in the shutter are controlled to achieve the desired flux and collimation. | 04-26-2012 |
20120097526 | ROTARY MAGNETRON - A rotary magnetron is provided with an end block for rotatably supporting a target on an axis of rotation. An elongate magnetic bar assembly is disposed within the target. A stator shaft is affixed in the end block; one end of the stator shaft is coupled to the elongate magnetic bar assembly to support the elongate magnetic bar assembly. The target has a target shaft extending over the stator shaft and rotatable thereon around the axis of rotation. The rotary magnetron is characterized by a rotating coolant seal disposed inside the target shaft proximate the one end of the stator shaft and proximate to the elongate magnetic bar assembly. | 04-26-2012 |
20120097527 | FILM FORMATION APPARATUS AND FILM FORMING METHOD - A film formation apparatus includes: a chamber in which both a body to be processed and a target are disposed; a first magnetic field generation section generating a magnetic field; and a second magnetic field generation section including a first generation portion to which a current defined as “Iu” is applied and a second generation portion to which a current defined as “Id” is applied, the first generation portion being disposed at a position close to the target, the second generation portion being disposed at a position close to the body to be processed, the second magnetic field generation section applying the currents to the first generation portion and the second generation portion so as to satisfy the relational expression Id04-26-2012 | |
20120118725 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method of forming a coating on a surface of an object to be processed includes disposing a target forming a base material of the coating and the object to be processed in a chamber so as to face each other, and generating a magnetic field through which a vertical line of magnetic force locally passes from a sputter surface of the target toward a surface to be film formed of the object to be processed at predetermined intervals; generating plasma in a space between the target and the object to be processed by introducing a sputter gas into the chamber, controlling a gas pressure in the chamber to a range of 0.3 Pa to 10.0 Pa, and applying a negative DC voltage to the target; and inducing and depositing the sputter particles on the object to be processed and forming the coating, while controlling flying direction of the sputter particles generated by sputtering the target. | 05-17-2012 |
20120132517 | METHOD FOR COATING A SUBSTRATE IN A VACUUM CHAMBER HAVING A ROTATING MAGNETRON - In a method for coating a substrate in a vacuum chamber having a rotating magnetron, wherein a substrate is guided past the magnetron in a substrate transport direction and is coated by a material, which has been isolated from a target connected to the magnetron, and, optionally with the material reacting with a reactive gas present in the vacuum chamber, homogeneity of the coating layer on a substrate is improved by stabilizing the working point by way of the target rotation. This is achieved in that a periodic change of a first process parameter caused by the target revolution is compensated for by a periodic change of a second process parameter having a determined level and/or by employing two magnetrons having different rotational speeds. | 05-31-2012 |
20120152726 | METHOD AND APPARATUS TO PRODUCE HIGH DENSITY OVERCOATS - A deposition system is provided, where conductive targets of similar composition are situated opposing each other. The system is aligned parallel with a substrate, which is located outside the resulting plasma that is largely confined between the two cathodes. A “plasma cage” is formed wherein the carbon atoms collide with accelerating electrons and get highly ionized. The electrons are trapped inside the plasma cage, while the ionized carbon atoms are deposited on the surface of the substrate. Since the electrons are confined to the plasma cage, no substrate damage or heating occurs. Additionally, argon atoms, which are used to ignite and sustain the plasma and to sputter carbon atoms from the target, do not reach the substrate, so as to avoid damaging the substrate. | 06-21-2012 |
20120181166 | PVD PROCESS WITH SYNCHRONIZED PROCESS PARAMETERS AND MAGNET POSITION - Embodiments of the present invention generally relate to methods for physical vapor deposition processes. The methods generally include synchronizing process chamber conditions with the position of a magnetron. As the magnetron is scanned over a first area of a target, the conditions within the chamber are adjusted to a first set of predetermined process conditions. As the magnetron is subsequently scanned over a second area of the target, the conditions within the chamber are adjusted to a second set of predetermined process conditions different the first set. The target may be divided into more than two areas. By correlating the position of the magnetron with different sets of process conditions, film uniformity can be improved by reducing center-to-edge non-uniformities, such as re-sputter rates which may be higher when the magnetron is near the edge of the target. | 07-19-2012 |
20120193217 | SEGMENTED POST CATHODE - A physical vapor deposition system includes a segmented post cathode having multiple post segments. | 08-02-2012 |
20120193218 | DEVICE FOR SUPPORTING A ROTATABLE TARGET AND SPUTTERING APPARATUS - It is provided a device for supporting a rotatable target of a deposition apparatus for sputtering material onto a substrate, wherein the device includes a drive unit for rotating the rotatable target; a ring-shaped part connected to the drive unit for attaching the drive unit to the rotatable target; and, a shield for covering the ring-shaped part. The shield is adapted for rotating together with the ring-shaped part and includes a plurality of parts assembled together. Furthermore, a sputtering apparatus and a method for supporting a rotatable target are provided. | 08-02-2012 |
20120199471 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - Provided are a film-forming apparatus and a film-forming method capable of preventing complication of an apparatus mechanism in formation of a thin film of multiple materials by sputtering to simplify the apparatus mechanism and preventing an increase in an apparatus cost. The film-forming apparatus includes a vacuum chamber, a substrate holder for holding a substrate, cathode mechanisms for supporting targets respectively so that the targets can be opposed to the substrate in the vacuum chamber, and shutters movable forward and backward individually between the targets made of different materials and the substrate to block or pass film-forming particles generated from the targets. At least one of the shutters is formed of a target material different from those for the targets so that the at least one of the shutters is configured as a shutter that also functions as a target. | 08-09-2012 |
20120211352 | SPUTTERING MAGNETRON ASSEMBLY - The present specification concerns a sputtering magnetron assembly | 08-23-2012 |
20120228123 | METHOD AND APPARATUS FOR PLASMA ION IMPLANTATION OF SOLID ELEMENT - Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. | 09-13-2012 |
20120228124 | METHOD OF CREATING PVD LAYERS USING A CYLINDRICAL ROTATING CATHODE AND APPARATUS FOR CARRYING OUT THIS METHOD - A method of depositing wear resistant layers, using PVD method, where the depositing is carried out from at least two working deposition sources, simultaneously, where at least one of said sources is a cylindrical rotating cathode working in an unbalanced magnetron regime and simultaneously, at least one of said sources is a cathode, working in low-voltage arc-discharge regime. Further, the invention is related to the apparatus for carrying out said method, the apparatus consisting of vacuum deposition chamber, in which there are at least two deposition sources with their relevant gas inputs of process gases and their shields, and in which at least one substrate on rotating support is placed, and where the most substantive is that at least one of said sources is a cylindrical rotating cathode working in an unbalanced magnetron regime, and, simultaneously, at least one of said sources is a cathode, working in low-voltage arc-discharge regime. | 09-13-2012 |
20120234672 | SPUTTERING METHOD AND SPUTTERING APPARATUS - This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S | 09-20-2012 |
20120241311 | SPUTTERING DEVICE AND SPUTTERING METHOD - According to the embodiment, a sputtering device and a sputtering method includes: a target of which a bottom surface is arranged so as to be opposed to a wafer substrate; a magnetic field forming portion which is arranged to be opposed to an upper surface of the target, and includes a magnet forming a magnetic field; a mechanism which changes a distance from a center point on a surface of the target opposed to the wafer substrate to a predetermined reference point of the magnetic field forming portion, while making the magnetic field forming portion go around the center point, with maintaining a spacing between the target and the magnetic field forming portion; and a wafer retaining portion which is capable of arranging the wafer substrate at a predetermined position. | 09-27-2012 |
20120273343 | METHOD FOR COATING A SUBSTRATE AND COATER - A method is provided for coating a substrate ( | 11-01-2012 |
20120285819 | Combinatorial and Full Substrate Sputter Deposition Tool and Method - A dual purpose processing chamber is provided. The dual purpose processing chamber includes a lid disposed over a top surface of a processing region of the processing chamber. A plurality of sputter guns with a target affixed to one end of each of the sputter guns is included. The plurality of sputter guns extend through the lid of the process chamber, wherein each of the plurality of sputter guns is oriented such that a surface of the target affixed to each gun is angled toward an outer periphery of a substrate. In another embodiment, each of the sputter guns is affixed to an extension arm and the extension arm is configured to enable movement in four degrees of freedom. A method of performing a deposition process is also included. | 11-15-2012 |
20130008777 | Cylindrical Rotating Magnetron Sputtering Cathode Device and Method of Depositing Material Using Radio Frequency Emissions - A rotating magnetron sputtering cathode apparatus comprising a radio frequency power supply, a power delivery assembly, a cylindrical rotating cathode, a shaft and a drive motor, wherein the power delivery assembly comprises a magnetic field source positioned within the cathode and an electrode extending within said cathode to transmit radio frequency energy to target material on the outer surface of the cathode. The electrode is electrically isolated from the shaft, and is formed from non-ferrous materials, and the shaft is mechanically connected to the cathode such that they remain electrically isolated while the cathode rotates about the magnetic field source and a portion of the electrode. The power supply is adapted to supply radio frequency energy at frequencies of 1 MHz or higher and is electrically connected to the electrode. A method of depositing material with a rotating cylindrical magnetron sputtering cathode apparatus comprising a radio frequency power supply and a cylindrical rotating cathode is also disclosed wherein the outer surface of the rotating cathode comprises a target material formed of an oxide. The method comprises the steps of causing the power supply to supply radio frequency energy at frequencies of 1 MHz or higher, causing the cathode to rotate, and positioning a substrate proximate to said outside surface of said cathode whereby the radio frequency energy causes the cathode to eject particles from the target material onto the substrate. | 01-10-2013 |
20130043120 | SPUTTERING TARGET WITH REVERSE EROSION PROFILE SURFACE AND SPUTTERING SYSTEM AND METHOD USING THE SAME - A sputtering target is provided that includes a planar backing plate and a target material formed over the planar backing plate and including an uneven sputtering surface including thick portions and thin portions and configured in conjunction with a sputtering apparatus such as a magnetron sputtering tool with a fixed magnet arrangement. The uneven surface is designed in conjunction with the magnetic fields that will be produced by the magnet arrangement such that the thicker target portions are positioned at locations where target erosion occurs at a high rate. Also provided is the magnetron sputtering system and a method for utilizing the target with uneven sputtering surface such that the thickness across the target to become more uniform in time as the target is used. | 02-21-2013 |
20130043121 | Method and Apparatus for Sputtering with a Plasma Lens - A plasma lens for enhancing the quality and rate of sputter deposition onto a substrate is described herein. The plasma lens serves to focus positively charged ions onto the substrate while deflecting negatively charged ions, while at the same time due to the line of sight positioning of the lens, allowing for free passage of neutrals from the target to the substrate. The lens itself is formed of a wound coil of multiple turns, inside of which are deposed spaced lens electrodes which are electrically paired to impress an E field overtop the B field generated by the coil, the potential applied to the electrodes increasing from end to end towards the center of the lens, where the applied voltage is set to a high potential at the center electrodes as to produce a potential minimum on the axis of the lens. | 02-21-2013 |
20130056347 | COOLING RING FOR PHYSICAL VAPOR DEPOSITION CHAMBER TARGET - Apparatus and method for physical vapor deposition are provided. In some embodiments, a cooling ring to cool a target in a physical vapor deposition chamber may include an annular body having a central opening; an inlet port coupled to the body; an outlet port coupled to the body; a coolant channel disposed in the body and having a first end coupled to the inlet port and a second end coupled to the outlet port; and a cap coupled to the body and substantially spanning the central opening, wherein the cap includes a center hole. | 03-07-2013 |
20130056348 | VACUUM COATING APPARATUS AND METHOD FOR DEPOSITING NANOCOMPOSITE COATINGS - A vacuum coating apparatus and method comprising a vacuum chamber, at least one pair of opposing cathodes, a power supply adapted to supply an AC voltage to said opposing cathodes to operate them in a dual magnetron sputtering mode, wherein at least one further cathode for PVD coating is provided in said vacuum chamber, characterized in that the at least one further cathode is a magnetron cathode and a further power supply is provided in the form of a pulsed power supply or a DC power supply is provided which is connectable to the magnetron cathode or arc cathode. | 03-07-2013 |
20130062194 | METHOD OF DEPOSITION - A method of deposition is provided in which a deposition operation can be immediately performed when a workpiece for deposition is carried into a deposition chamber irrespective of a shape or a structure of the workpiece for deposition. The workpiece for deposition is integrally molded with an assisting member, which is configured to maintain the workpiece for deposition in a predetermined orientation such that a deposition surface or a deposition portion thereof faces a target material when the workpiece for deposition is carried into a deposition chamber and is placed on a deposition stand, when the workpiece for deposition is injection-molded; and the workpiece for deposition is carried into the deposition chamber and is deposited. | 03-14-2013 |
20130081938 | MAGNETRON SPUTTERING APPARATUS AND METHOD - A magnetron sputtering apparatus in which a target is disposed to face a substrate includes a magnet array body including a magnet group arranged on a base body, and a rotating mechanism for rotating the magnet array body around an axis perpendicular to the substrate. In the magnet array body, N poles and S poles constituting the magnet group are arranged to be spaced from each other along a surface facing the target such that a plasma is generated based on a drift of electrons by a cusp magnetic field. Magnets located on the outermost periphery of the magnet group are arranged in a line to prevent the electrons from being released from constraint of the cusp magnetic field and jumping out of the cusp magnetic field. A distance between the target and the substrate during sputtering is equal to or less than 30 mm. | 04-04-2013 |
20130092528 | FILM-FORMING DEVICE AND FILM-FORMING METHOD - A film-forming device is provided, including: a chamber in which a substrate is disposed; a target, disposed within the chamber, which contains a material from which a film is formed; a substrate-supporting table disposed inside the chamber; driving unit that rotates the substrate-supporting table; a sputtering cathode that causes sputtered particles to be incident on the substrate from an oblique direction; and a control unit that controls the driving unit by setting a rotation period so that a sputtering film formation time required to form a film having a desired thickness is an integer multiple of a rotation period of the substrate-supporting table. | 04-18-2013 |
20130092529 | PLASMA PROCESSING WITH ENHANCED CHARGE NEUTRALIZATION AND PROCESS CONTROL - Plasma processing with enhanced charge neutralization and process control is disclosed. In accordance with one exemplary embodiment, the plasma processing may be achieved as a method of plasma processing a substrate. The method may comprise providing the substrate proximate a plasma source; applying to the plasma source a first RF power level during a first period and a second RF power level during a second period, the first and second RF power levels being greater than zero RF power level, wherein the second RF power level is greater than the first RF power level; generating with the plasma source a first plasma during the first period and a second plasma during the second period; and applying to the substrate a first bias voltage during the first period and a second bias voltage during the second period, wherein the first voltage has more negative potential than the second voltage. | 04-18-2013 |
20130112545 | Sputtering Method Using Sputtering Device - The present invention relates to a sputtering method using a sputtering device, wherein entire scan region is defined from one side to the other side of a sputtering target, and the sputtering target is scanned with a magnet moving back and forth along the entire scan region multiple times. The entire scan region of a sputtering target is divided by N parts to be uniformly eroded, such that a magnet moves back and forth along some part of the divided entire scan region. A sputtering method using a sputtering device can therefore extend an alternating cycle of a sputtering target, by virtue of improving utilization efficiency of the sputtering target through uniform erosion of the sputtering target, and can also reduce manufacturing cost. | 05-09-2013 |
20130112546 | LINEAR SCANNING SPUTTERING SYSTEM AND METHOD - A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behinds the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. The movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge and trailing edge of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone. | 05-09-2013 |
20130126333 | Magnetic Field Configuration For Energetic Plasma Surface Treatment and Energetic Deposition Conditions - A vacuum deposition system for forming a dense coating includes a substrate holder for holding a substrate having a substrate surface to be coated, a magnetic field generator, an optional electron source, an optional electron drain, and a deposition source. The magnetic field generator generates a magnetic field in which the substrate is at least partially immersed such that a component of the magnetic field is parallel to the substrate surface such that electrons are forced along a path that causes ionization in the vicinity of the substrate surface. The magnetic field strength at the substrate surface is between 5 and 1000 Gauss. The deposition source provides material to coat the substrate. The vacuum deposition system includes the optional electron source if the deposition source does not provide a source of electrons. A method for depositing a dense coating is also provided. | 05-23-2013 |
20130161184 | APPARATUS FOR FORMING GAS BLOCKING LAYER AND METHOD THEREOF - A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/m | 06-27-2013 |
20130168231 | Method For Sputter Deposition And RF Plasma Sputter Etch Combinatorial Processing - Combinatorial processing of a substrate comprising site-isolated sputter deposition and site-isolated plasma etching can be performed in a same process chamber. The process chamber, configured to carry out sputter deposition and RF plasma etch, comprises a grounded shield having at least an aperture disposed above the substrate to form a small, dark space gap to reduce or eliminate any plasma formation within the gap | 07-04-2013 |
20130168232 | COILS FOR GENERATING A PLASMA AND FOR SPUTTERING - A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece. | 07-04-2013 |
20130186743 | MAGNETRON SPUTTERING APPARATUS AND FILM FORMING METHOD - A target is provided opposite to a wafer mounted on in a vacuum chamber, and a magnet array body is disposed above the target. In the magnet array body, ring-shaped magnet arrays are arranged to generate annular magnetic fields in the circumferential direction of the wafer, and a sputtering film formation is performed by switching between the magnetic fields. | 07-25-2013 |
20130186744 | METHOD OF SWITCHING MAGNETIC FLUX DISTRIBUTION - In a method of switching magnet flux distribution, a magnet is arranged on a rear side of a backing plate with respect to a target holding side thereof in a magnetron sputtering cathode, and placing an article that exhibits ferromagnetism at room temperature on the target holding side of the backing plate or removing the article therefrom so that the magnet flux distribution is switched between a balanced distribution of the magnetic flux and unbalanced distribution of the magnetic flux. | 07-25-2013 |
20130192980 | CRYSTALLINE ORIENTATION AND OVERHANG CONTROL IN COLLISION BASED RF PLASMAS - Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures. | 08-01-2013 |
20130192981 | DIRECT COOLED ROTARY SPUTTERING TARGET - A rotary deposition target bonded to a backing tube such that the bonding material is applied only at the ends of the rotary sputtering target to form a gap between the rotary sputtering target and the backing tube to enable a target cooling fluid used during the deposition process to contact the target directly and to provide a hermetic seal to contain the cooling fluid within the gap and prevent the fluid from being exposed to the environment within the deposition chamber. | 08-01-2013 |
20130199924 | SPUTTERING SOURCES FOR HIGH-PRESSURE SPUTTERING WITH LARGE TARGETS AND SPUTTERING METHOD - A sputtering head comprises a receiving area for a sputtering target (target receptacle). The sputtering head comprises one or more magnetic field sources so as to generate a stray magnetic field. The magnetic north and the magnetic south of at least one magnetic field source, between which the stray field forms, are located 10 mm or less, preferably 5 mm or less, and particularly preferably approximately 1 mm apart. It was found that, notably when sputtering at a high sputtering gas pressure of 0.5 mbar or more, the degree of ionization of the sputtering plasma, and consequently also the ablation rate of the sputtering target, can be locally adjusted by such a locally effective magnetic field. This allows the thicknesses of the layers that are obtained to be more homogeneous over the surface of the substrate. Advantageously, the sputtering head additionally comprises a solid state insulator, which surrounds the base body comprising the target receptacle and the sputtering target (all connected to potential) and electrically insulates the same from the shield that spatially limits the material ablation to the sputtering target (connected to ground). | 08-08-2013 |
20130213797 | Rotation Plus Vibration Magnet for Magnetron Sputtering Apparatus - In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time. | 08-22-2013 |
20130220795 | SPUTTERING APPARATUS INCLUDING TARGET MOUNTING AND CONTROL - A sputtering chamber includes at least two sputtering targets, one of the at least two targets disposed on a first side a substrate conveyor extending within the chamber, and another of the at least two targets disposed on a second side of the conveyor. The at least two targets may be independently operable, and at least one of the targets, if inactivated, may be protected by a shielding apparatus. Both of the at least two targets may be mounted to a first wall of a plurality of walls enclosing the sputtering chamber. | 08-29-2013 |
20130220796 | COMPOSITE TARGET AND METHOD FOR MANUFACTURING THE SAME - A composite target and method for manufacturing the same are described, which manufactures the composite target according an etching condition of a waste target. The waste target is generated after an original target at least haying a substrate layer and a metal layer is processed through a sputtering process by a sputtering apparatus with a first magnetic field line distribution. By determining the etching condition caused by the first magnetic field line distribution, a magnetic layer with a second magnetic field line distribution is decided to dispose on the original target. The metal layer is formed on the substrate layer and/or the magnetic layer. The substrate layer, the magnetic layer and the metal layer are combined by a connection layer to form the composite target. The composite target can provide the second magnetic field line distribution to adjust the first magnetic field line distribution. | 08-29-2013 |
20130220797 | HIGH TARGET UTILIZATION MOVING MAGNET PLANAR MAGNETRON SCANNING METHOD - A method for operating a moving magnet magnetron is provided enhanced target utilization. A magnet pack is moved in a first 2-D motion profile with a variable velocity. The magnet pack is then translated in a second 2-D motion profile that varies relative to the first profile. This process moving and translating is repeated to provide enhanced target utilization. These varied movement and translation profiles preclude the formation of a diamond-shaped erosion area common to the prior art. Representative to such profiles are intersecting sigmoidal curves. The resultant target is characterized by a metal from that has better target utilization as the wear pattern precludes the diamond shaped erosion area common to the prior art and instead has a multiple erosion peaks. | 08-29-2013 |
20130228451 | COATING SUBSTRATES WITH AN ALLOY BY MEANS OF CATHODE SPUTTERING - The invention relates to a target for coating a substrate with an alloy by means of cathode sputtering, said alloy having at least one first material and one second material as alloy components. The surface of the target has at least one first section made of the first material and one second section made of the second material. The two sections adjoin each other and form a common boundary line. The invention further relates to a device and a method for coating a substrate with an alloy by means of cathode sputtering using the target according to the invention. | 09-05-2013 |
20130228452 | SOFT SPUTTERING MAGNETRON SYSTEM - A sputtering method and apparatus having at least one set of dual rotatable cylindrical sputtering targets mounted in a vacuum chamber. Magnet assemblies in hollow target cylinders provide erosion zones running long the parallel sides of a racetrack that act as target flux sources towards a substrate. These parallel erosion zones have a highly concentrated plasma density for rapid sputtering of the target and any reactive material. Features include the angular distance between normals to adjacent parallel erosion zones, the angle greater than 45° subtended at the center of the cylindrical target, placement of the substrate with respect to the targets, and pointing angles (orientation or tilt) of the racetracks toward the substrate and/or each other. These parameters form a relatively wide and efficient constant flux deposition region at the substrate, and allows for high deposition rates at constant reactive gas partial pressures with substantially uniform film stoichiometry and thickness. | 09-05-2013 |
20130233701 | Dual Hexagonal Shaped Plasma Source - A plasma source includes a hexagonal hollow cathode, the cathode including six targets and six magnets to generate and maintain a high density plasma; and an anode located beneath the cathode. A second hexagonal hollow cathode can be positioned concentric to the hexagonal hollow cahode. | 09-12-2013 |
20130256119 | METHOD FOR APPLYING POWER TO TARGET MATERIAL, POWER SUPPLY FOR TARGET MATERIAL, AND SEMICONDUCTOR PROCESSING APPARATUS - A method for applying power to target material in a magnetron sputtering process is provided. The method includes: | 10-03-2013 |
20130264191 | SHIELD MESH FOR SPUTTERING OF A THIN FILM ON A SUBSTRATE - Sputtering chambers including a mesh material covering the inner surfaces within the chamber are generally provided. The sputtering chamber can include a cathode positioned in working proximity to a sputtering target, a target shield extending over at least a portion of the sputtering target while leaving a majority of the sputtering target exposed, and a mesh material positioned on an outer surface of the target shield. Additionally, or alternatively, the sputtering chamber candefine a pair of side walls, a top wall, and a bottom wall, with the mesh material positioned on an inner surface of the side walls, the top wall, and/or the bottom wall. Methods are also generally provided for sputtering a target in a sputtering chamber to deposit a thin film on a substrate. | 10-10-2013 |
20130277205 | MAGNETRON SOURCE, MAGNETRON SPUTTERING APPARATUS AND MAGNETRON SPUTTERING METHOD - Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided. | 10-24-2013 |
20130284589 | RADIO FREQUENCY TUNED SUBSTRATE BIASED PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD OF OPERATION - A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate. | 10-31-2013 |
20130284590 | SYSTEMS AND METHODS FOR FORMING A LAYER OF SPUTTERED MATERIAL - The present disclosure describes a method of coating a substrate, the method including forming a layer of sputtered material on the substrate. Forming the layer of sputtered material may include: sputtering material from at least one rotatable target over the substrate; varying the relative position between the at least one target and the substrate. In addition, the present disclosure describes varying the distance between a target and a substrate during the sputter process. The present disclosure further describes a system for coating a substrate. | 10-31-2013 |
20130306464 | SPUTTERING TARGET AND SPUTTERING APPARATUS AND SPUTTERING METHOD USING THE SAME - A rotary cylindrical sputtering target includes a plurality of target pieces bonded to the periphery of a backing tube, wherein the target pieces are arranged in the axis direction of the tube so that a gap is formed between the adjacent target pieces, wherein the gap has a straight section which extends from the outer periphery of the target pieces toward the axis of the backing tube, and a tapered section which is positioned between the straight section and the backing tube, and which slopes in the longitudinal direction of the straight section. | 11-21-2013 |
20130319848 | SPUTTERING PROCESS - In a process for coating a substrate, the substrate is arranged opposite a removal surface of a target and the coating material is atomized by sputtering under an inert or reactive-gas-containing process gas and deposited on the substrate. The coating takes place from a mixed target with at least one target component A and a target component B. At the beginning of the sputtering process, the distribution of the target components A and B in a superficial target layer of the removal surface is modified by high-power impulse magnetron sputtering. | 12-05-2013 |
20130327635 | MAGNETRON ELECTRODE FOR PLASMA PROCESSING - The invention aims to provide a magnetron electrode for plasma treatment that is free of significant abnormal electrical discharge and able to perform electrical discharge with long-term stability. A second electrode is provided only at a position outside the inner side surface of the outer magnetic pole of a first electrode or at a position where the magnetic flux density is low. | 12-12-2013 |
20140001031 | DEVICE FOR PRODUCING NANOPARTICLES AT HIGH EFFICIENCY, USE OF SAID DEVICE AND METHOD OF DEPOSITING NANOPARTICLES | 01-02-2014 |
20140008213 | MAGNET MODULE HAVING EPICYCLIC GEARING SYSTEM AND METHOD OF USE - This disclosure relates to a magnet assembly including an epicyclic gearing system. The epicyclic gearing system including a central gear configured to be rotated, at least one peripheral gear connected to the central gear and configured to rotate and translate relative to the central gear, and an annulus surrounding the at least one peripheral gear and connected with the at least one peripheral gear. The magnet assembly further includes a magnet module connected with the epicyclic gearing system, the magnet module including a support connected with the at least one peripheral gear, the axis of rotation of the support being coaxial with the axis of rotation of the at least one peripheral gear connected with the support. | 01-09-2014 |
20140014499 | DEPOSITION SYSTEM WITH ELECTRICALLY ISOLATED PALLET AND ANODE ASSEMBLIES - A system for substrate deposition is disclosed. The system includes a wafer pallet and an anode. The wafer pallet has a bottom and a top. The top of the wafer pallet is configured to hold a substrate wafer. The anode has a substantially fixed position relative to the wafer pallet and is configured to move with the wafer pallet through the deposition chamber. The anode is electrically isolated from the substrate wafer. | 01-16-2014 |
20140021037 | THIN FILM FORMING APPARATUS AND THIN FILM FORMING METHOD - A thin film forming apparatus includes a substrate holding portion and a target portion. The target portion has a plurality of targets arranged at predetermined intervals and parallel to a substrate held by the substrate holding portion. The substrate holding portion is configured to move the substrate parallel to the target portion. A shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate so as to face a gap between adjoining ones of the targets. | 01-23-2014 |
20140034483 | THIN FILM DEPOSITION APPARATUS AND METHOD OF DEPOSITING THIN FILM USING THE SAME - A thin film deposition apparatus includes a process chamber that includes a reaction space, a plasma generating unit, and a sputtering unit. The plasma generating unit generates a plasma in the reaction space. The sputtering unit is independently driven from the plasma generating unit to form an electric field in the reaction space and to perform a sputtering process on a target using the plasma. | 02-06-2014 |
20140042015 | Magnetron Sputtering Process - To control reactive magnetron sputtering process using a reactive gas or reactive gases the process overall pressure is regulated by means of the flow of the re-active gas or the reactive gases, respectively. Oscillations of the flow of the reactive gas or the reactive gases, respectively are determined and used as feedback to determine the process overall pressure. | 02-13-2014 |
20140054164 | DEPOSITION APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD - A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber. | 02-27-2014 |
20140061029 | SPUTTERING APPARATUS - One embodiment is directed to a magnetron assembly comprising a plurality of magnets, and a yoke configured to hold the plurality of magnets in at least four straight, parallel, independent linear arrays. The plurality of magnets is arranged in the yoke so as to form a pattern comprising an outer portion and an inner portion, wherein the outer portion substantially surrounds the perimeter of the inner portion. The end portions of the linear array comprise a pair of turnaround sections, wherein each turnaround section substantially spans respective ends of the pair of elongated sections of the outer portion. The magnets in each turnaround section are arranged to form at least two or more different curves in the magnetic field that are offset from each along the target rotation axis. | 03-06-2014 |
20140061030 | HIGH-POWER SPUTTERING SOURCE - The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm | 03-06-2014 |
20140069802 | APPARATUS AND METHODS FOR PHYSICAL VAPOR DEPOSITION - This disclosure provides systems, methods, and apparatus related to physical vapor deposition. In one aspect, an apparatus includes a magnet assembly including a magnet element, a substrate holder configured to hold a substrate, a target holder configured to hold a target positioned between the magnet assembly and the substrate, a motor configured to move the magnet assembly across a face of the substrate, and a controller. The controller includes program instructions for conducting a process including moving the magnet assembly across the face of the substrate using the motor to sputter material from the target onto the substrate. The material sputtered onto the substrate may have a substantially uniform thickness. | 03-13-2014 |
20140076715 | Low Pressure Arc Plasma Immersion Coating Vapor Deposition and Ion Treatment - A coating system includes a vacuum chamber and a coating assembly. The coating assembly includes a vapor source, a substrate holder, a remote anode electrically coupled to the cathode target, and a cathode chamber assembly. The cathode chamber assembly includes a cathode target, an optional primary anode and a shield which isolates the cathode target from the vacuum chamber. The shield defines an opening for transmitting an electron emission current of a remote arc discharge from the cathode target to the remote anode that streams along the target face long dimension. A primary power supply is connected between the cathode target and the primary anode while a secondary power supply is connected between the cathode target and the remote anode. Characteristically, a linear remote anode dimension and a vapor source short dimension are parallel to a dimension in which an arc spot is steered along the cathode target. | 03-20-2014 |
20140076716 | Low Pressure Arc Plasma Immersion Coating Vapor Deposition And Ion Treatment - A vacuum coating and plasma treatment system includes a magnetron cathode with a long edge and a short edge. The magnetic pole of the magnetron results in an electromagnetic barrier. At least one remote arc discharge is generated separate from the magnetron cathode and in close proximity to the cathode so that it is confined within a volume adjacent to the magnetron target. The remote arc discharge extends parallel to the long edge of the magnetron target and is defined by the surface of the target on one side and the electromagnetic barrier on all other sides. There is a remote arc discharge cathode hood and anode hood extending over the arc discharge and across the short edge of the magnetron cathode. Outside of the plasma assembly is a magnetic system creating magnetic field lines which extend into and confine the plasma in front of the substrate. | 03-20-2014 |
20140097079 | FILM FORMING METHOD BY SPUTTERING APPARATUS AND SPUTTERING APPARATUS - The present invention provides a film forming method which can reduce deterioration of film thickness distribution even if the thickness of a film to be formed is extremely small while improving use efficiency of a target and a sputtering apparatus. A film forming method by a sputtering apparatus according to one embodiment of the present invention has a first step of fixing a magnet to a first position and performing film formation on a substrate on a substrate support surface, a second step of moving the magnet to a second position different from the first position after finishing the film formation on the substrate and then fixing it thereto, and a third step of performing film formation on the substrate on the substrate support surface by using the magnet fixed to the second position. | 04-10-2014 |
20140110245 | NON-BONDED ROTATABLE TARGETS AND THEIR METHODS OF SPUTTERING - Cylindrical sputtering targets, along with methods of their manufacture and use, are provided. The cylindrical sputtering target includes a tubular member having a length in a longitudinal direction and defining a tube surface, and a source material positioned about the tube surface of the tubular member and forming a sputtering surface about the tubular member. The source material generally defines an inner surface opposite of the sputtering surface and non-bonded to the tube surface of the tubular member. The inner surface of the source material is mechanically engaged to the tube surface of the tubular member, and/or the source material can include a first cylindrical ring directly stacked onto a second cylindrical ring with the first cylindrical ring being mechanically engaged to the second cylindrical ring. | 04-24-2014 |
20140131194 | SPUTTERING DEVICE FOR FORMING THIN FILM AND METHOD FOR MAKING THIN FILM - A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders | 05-15-2014 |
20140144771 | Cooling Efficiency Method for Fluid Cooled Sputter Guns - A sputter gun assembly is provided. The sputter gun assembly includes a target and a target backing plate coupled to the back of the target. A magnetron is positioned within a cooling chamber and is disposed over the target backing plate and defines a gap between the magnetron and the target backing plate. A fluid inlet and a fluid outlet are connected to the cooling chamber. A restriction bar is positioned within the cooling chamber, wherein the restriction bar is configured to prevent a flow of fluid through the inlet to the outlet unless the fluid traverses the gap defined between the magnetron and the target backing plate. The sputter gun assembly further includes a diverter surrounding the magnetron. The diverter further includes slots in its surface that serve to direct cooling fluid through the gap formed between defined between the magnetron and the target backing plate. | 05-29-2014 |
20140158523 | Adjustable Shunt Assembly For A Sputtering Magnetron And A Method For Adjusting Such A Shunt - An adjustable shunt assembly for use with a sputtering magnetron having at least two magnets spaced from one another and disposed with respect to a sputtering target having a sputtering surface. The magnets define a longitudinal axis and the adjustable shunt assembly moves a shunt between the two magnets for altering the magnetic field therebetween. A transporter is used for moving the shunt so that such movement may be occurred without disassembling the components of the magnetron and such movement may also be done remotely. A method for moving such shunts is also disclosed. | 06-12-2014 |
20140174910 | Sputter Gun Shield - A shielding component and a sputter gun are described. The sputter gun has a housing. The housing has a region configured to expose a target surface. The shielding component extends around an inward facing periphery of the region. The shielding component comprises metal foam. The shielding component is configured to provide a fluid proximate to the target surface. An annular channel may be arranged to provide a gas through pores of the metal foam of the shielding component, to the region proximate to the target. | 06-26-2014 |
20140174911 | Methods and Systems for Reducing Particles During Physical Vapor Deposition - Embodiments provided herein describe methods and systems for depositing material onto a surface. A target including a material in a porous state is provided. The density of the material in the porous state is less than 89% of the absolute density of the material. The target is positioned over a surface. At least some of the material is caused to be ejected from the target and deposited onto the surface. | 06-26-2014 |
20140183034 | ANTIMAGNETIC SPUTTERING DEVICE AND METHOD FOR DRIVING THE SAME - An antimagnetic sputtering device and a method for driving the same, the device including a vacuum chamber; a chuck on a bottom side of an inside of the vacuum chamber, the chuck providing a space on which a substrate is to be seated; a target on an upper side of the inside of the vacuum chamber, the target facing the chuck; a magnet on an upper portion of the target; a driving unit that drives the magnet; and a control unit that controls the driving unit to move the magnet at predetermined time intervals while the device is in a standby mode after completion of a sputtering process for the substrate. | 07-03-2014 |
20140183035 | SPUTTERING APPARATUS AND METHOD FOR FORMING THIN FILM - A sputtering method uses a sputtering apparatus for forming a thin film, the sputtering apparatus comprising a pair of facing polygonal prism target holders in which a target is placed on each surface parallel to a rotation axis of a rotatable polygonal prism body. A magnetic pole group including a plurality of magnets is disposed on a back surface of each of the targets, and each of the magnetic pole groups includes magnets or yokes of different magnetic pole directions. The magnets or yokes on the back surface of each of the targets are disposed so that adjacent magnets or yokes become alternately different magnetic pole direction, and the magnets or yokes disposed on the back surfaces of the targets have polarities opposite to each other. | 07-03-2014 |
20140190819 | METHOD FOR SUPPLYING SEQUENTIAL POWER IMPULSES - The invention relates to a method for supplying power impulses for PVD sputtering cathodes subdivided into partial cathodes. In said method, the power impulse intervals acting on the partial cathodes are selected in such a way as to overlap, thereby dispensing with the need to interrupt the drawing of power supplied by the generator. | 07-10-2014 |
20140216922 | RF DELIVERY SYSTEM WITH DUAL MATCHING NETWORKS WITH CAPACITIVE TUNING AND POWER SWITCHING - Apparatus and method for delivering power to a substrate processing chamber may include a target and a substrate support pedestal disposed in the chamber, a pedestal impedance match device coupled between the substrate support pedestal and ground, wherein the pedestal impedance match device is configured to adjust a bias voltage on the substrate support pedestal, a target impedance match device coupled between the target and ground, wherein the target impedance match device is configured to adjust a bias voltage on the target, a switch electrically coupled to the pedestal impedance match device and the target impedance match device, a first RF power source coupled to the switch, wherein the switch is configured to direct high frequency voltage from the first RF power source to either the target or the substrate support pedestal, and a second RF power source coupled to the substrate support pedestal. | 08-07-2014 |
20140231243 | CHARGE REMOVAL FROM ELECTRODES IN UNIPOLAR SPUTTERING SYSTEM - This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively. | 08-21-2014 |
20140238843 | Variable radius dual magnetron - A dual magnetron particularly useful for RF plasma sputtering includes a radially stationary open-loop magnetron comprising opposed magnetic poles and rotating about a central axis to scan an outer region of a sputter target and a radially movable open-loop magnetron comprising opposed magnetic poles and rotating together with the stationary magnetron. During processing, the movable magnetron is radially positioned in the outer region with an open end abutting an open end of the stationary magnetron to form a single open-loop magnetron. During cleaning, part of the movable magnetron is moved radially inwardly to scan and clean an inner region of the target not scanned by the stationary magnetron. The movable magnetron can be mounted on an arm pivoting about an axis at periphery of a rotating disk-shaped plate mounting the stationary magnetron so the arm centrifugally moves between radial positions dependent upon the rotation rate or direction. | 08-28-2014 |
20140238844 | Methods And Apparatus For Generating Strongly-Ionized Plasmas With Ionizational Instabilities - A plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. A pulsed power supply comprising at least two solid state switches and having an output that is electrically connected between the anode and the cathode assembly generates voltage micropulses. A pulse width and a duty cycle of the voltage micropulses are generated using a voltage waveform comprising voltage oscillation having amplitudes and frequencies that generate a strongly ionized plasma. | 08-28-2014 |
20140251788 | METHODS AND APPARATUS FOR STABLE SUBSTRATE PROCESSING WITH MULTIPLE RF POWER SUPPLIES - Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency. | 09-11-2014 |
20140251789 | PHYSICAL VAPOR DEPOSITION RF PLASMA SHIELD DEPOSIT CONTROL - Methods and apparatus for processing a substrate in a physical vapor deposition (PVD) chamber are provided herein. In some embodiments, a process kit shield used in a substrate processing chamber may include a shield body having an inner surface and an outer surface, a process kit shield impedance match device coupled between the shield body and ground, wherein the process kit shield impedance match device is configured to adjust a bias voltage of the process kit shield, a cavity formed on the outer surface of the shield body, and one or more magnets disposed within the cavity. | 09-11-2014 |
20140262749 | Methods of Plasma Surface Treatment in a PVD Chamber - Combinatorial processing of a substrate comprising site-isolated sputter deposition and site-isolated plasma processing can be performed in a same process chamber. The process chamber, configured to perform sputter deposition and plasma processing, comprises a grounded shield having at least an aperture disposed above the substrate to form a small, dark space gap to reduce or eliminate any plasma formation within the gap. The plasma processing may include plasma etching or plasma surface treatment. | 09-18-2014 |
20140262750 | Sputtering Devices and Methods - The invention provides devices and methods for depositing uniform coatings using cylindrical magnetron sputtering. The devices and methods of the invention are useful in depositing coatings on non-cylindrical workpiece surfaces. An assembly of electromagnets located within the bore of a hollow cylindrical emitter is used to form a magnetic field exterior to and near the exterior surface of the emitter. The magnet assembly configuration is selected to provide a magnetic field configuration compatible with the workpiece surface contour. The electromagnet assembly may be a plurality of magnet units, each unit having at least one electromagnet. The magnetic field strength from each magnet unit is separately and electrically adjustable. Each electromagnet in the assembly has a coil of electrically conducting material surrounding a specially shaped core of magnetic material. | 09-18-2014 |
20140284207 | FILTERS FOR BLOCKING MACROPARTICLES IN PLASMA DEPOSITION APPARATUS - This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak. | 09-25-2014 |
20140291140 | METHOD AND APPARATUS FOR PLASMA GENERATION - In a simple method and device for producing plasma flows of a metal and/or a gas electric discharges are periodically produced between the anode and a metal magnetron sputtering cathode in crossed electric and magnetic fields in a chamber having a low pressure of a gas. The discharges are produced so that each discharge comprises a first period with a low electrical current passing between the anode and cathode for producing a metal vapor by magnetron sputtering, and a second period with a high electrical current passing between the anode and cathode for producing an ionization of gas and the produced metal vapor. Instead of the first period a constant current discharge can be used. Intensive gas or metal plasma flows can be produced without forming contracted arc discharges. The selfsputtering phenomenon can be used. | 10-02-2014 |
20140305792 | HIPIMS LAYERING - The present invention relates to a method for the vapor deposition of PVD layer systems by means of sputtering on at least one substrate, wherein the layer system comprises at least a first layer, characterized in that, at least in one step of the method, a HiPIMS method is used with a power density of at least 250 W/Cm | 10-16-2014 |
20140311893 | SPUTTERING SYSTEM AND METHOD USING DIRECTION-DEPENDENT SCAN SPEED OR POWER - A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behind the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. In certain embodiments, the movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge and trailing edge of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone. In certain embodiments, magnet power and/or speed varies as function of direction of magnet travel. | 10-23-2014 |
20140318947 | SPUTTER TARGET AND SPUTTERING METHODS - The present disclosure concerns sputter targets and sputtering methods. In particular, sputter targets and methods of sputtering using conventional sputter targets as well as sputter targets described herein, for highly uniform sputter deposition, are described. | 10-30-2014 |
20140374240 | MULTIFUNCTIONAL ELECTRODE - A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10Ω cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed. | 12-25-2014 |
20150008118 | METHOD FOR THE COATING OF A SUBSTRATE - Method for the coating of a substrate (S) in a process chamber ( | 01-08-2015 |
20150021166 | SPUTTERING APPARATUS AND METHOD - A deposition apparatus for depositing a layer of deposition material on a substrate is provided. The apparatus includes a substrate support adapted for holding the substrate; a target support ( | 01-22-2015 |
20150021167 | SYSTEM AND METHOD FOR BALANCING CONSUMPTION OF TARGETS IN PULSED DUAL MAGNETRON SPUTTERING (DMS) PROCESSES - A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons. | 01-22-2015 |
20150027875 | DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING DISPLAY APPARATUS USING THE DEPOSITION APPARATUS - A deposition apparatus may include a first substrate mounting member and a second substrate mounting member that may overlap the first substrate mounting member. The deposition apparatus may further include a sputter unit disposed in a space located between the first substrate mounting member and the second substrate mounting member. The sputter unit may have a first opening and a second opening. The first opening may be disposed closer to the first substrate mounting member than the second opening. The second opening may be disposed closer to the second substrate mounting member than the first opening. A first set of material and a second set of material may be simultaneously provided through the first opening and the second opening, respectively. | 01-29-2015 |
20150027876 | SPUTTERING SYSTEM AND METHOD OF FABRICATING DISPLAY DEVICE USING THE SAME - A sputtering system includes a chamber, a plurality of targets, and a substrate holder. The targets are disposed in the chamber. Each target includes a magnet unit disposed therein. The substrate holder is configured to support a substrate in the chamber. The magnet units are configured to generate a magnetic field between the targets. Each of the magnet units includes magnets disposed in two rows. | 01-29-2015 |
20150041310 | SPUTTERING APPARATUS AND METHOD - A sputtering apparatus includes: a first cylindrical target unit, a second cylindrical target unit facing the first cylindrical target unit; a third cylindrical target unit facing the first cylindrical target unit and the second cylindrical target unit; a fourth cylindrical target unit facing the first cylindrical target unit, the second cylindrical target unit, and the third cylindrical target unit; and a power unit configured to provide power such that two of the first cylindrical target unit, the second cylindrical target unit, the third cylindrical target unit, and the fourth cylindrical target unit function as different electrodes. | 02-12-2015 |
20150053547 | FILM FORMING METHOD, FILM FORMING APPARATUS AND CONTROL UNIT FOR THE FILM FORMING APPARATUS - The invention reduces generation of particles. An embodiment of the preset invention includes a target holder ( | 02-26-2015 |
20150060262 | SPUTTERING SYSTEMS FOR LIQUID TARGET MATERIALS - A sputtering system comprises a magnetron assembly for depositing liquid metal films on a substrate. The magnetron assembly comprises a horizontal planar magnetron with a liquid metal target, a cylindrical rotatable magnetron with a metal target and a set of one or more shields forming a chamber between the planar and the rotatable magnetron. | 03-05-2015 |
20150060263 | VACUUM FILM DEPOSITION DEVICE AND VACUUM FILM DEPOSITION METHOD - In order to provide an adhesion preventing plate for a vacuum film formation apparatus, the adhesion preventing plate being capable of suppressing the peel-off of an adhered film to an extremely low level regardless of a protection target member, the adhesion preventing plate is arranged so that the area of contact with the protection target member is reduced and a part other than the contact surface is thermally insulated. | 03-05-2015 |
20150075970 | PVD PLASMA CONTROL USING A MAGNET EDGE LIFT MECHANISM - Apparatus for providing a magnetic field within a process chamber are provided herein. In some embodiments, an apparatus for providing a magnetic field within a process chamber includes: an inner rotating mechanism including a first plate having a central axis, wherein the first plate includes and a first plurality of magnets and is rotatable about the central axis; and an outer lifting mechanism including a ring disposed proximate the first plate, the ring having a second plurality of magnets coupled to a bottom surface of the ring proximate the peripheral edge of the ring, wherein the ring is movable in a direction perpendicular to the first plate. | 03-19-2015 |
20150096881 | SPUTTERING APPARATUS AND SPUTTERING METHOD - An objective of the present invention is to provide a sputtering apparatus capable of obtaining an adequate film thickness distribution on a substrate surface even if a target projection plane is kept from being projected on the substrate. A sputtering apparatus includes: a process chamber; a substrate holder being rotatable in an in-plane direction of the substrate while holding the substrate; and a sputtering cathode located obliquely to the substrate holder, and arranged to incline to the substrate holder. A projection plane of a target holding surface of the sputtering cathode projected in a direction along a center normal line to the target holding surface onto a plane containing a substrate mounting surface of the substrate holder is formed outside the substrate mounting surface of the substrate holder, and the center normal line to the substrate mounting surface and the center normal line to the sputtering cathode are not coplanar. | 04-09-2015 |
20150101924 | ASSEMBLY AND METHOD OF COATING AN INTERIOR SURFACE OF AN OBJECT - A plasma deposition assembly for use in coating an interior surface of an object is provided. The assembly includes a head portion including an anode and a cathode adjacent to the anode. The cathode is fabricated from a coating material. The cathode also includes an outer surface adjacent to the interior surface of the object, wherein current is supplied to the cathode to form an arc on the outer surface such that the coating material is directed substantially radially outward from the outer surface of the cathode towards the interior surface of the object. The assembly also includes a moveable arm coupled to the head portion and configured to translate the head portion relative to the interior surface of the object as the arc deposits the coating material on the interior surface of the object. | 04-16-2015 |
20150107987 | PLASMA GENERATION APPARATUS, DEPOSITION APPARATUS, AND PLASMA GENERATION METHOD - Provided is a plasma generation apparatus capable of generating uniform plasma over a wide range. The plasma generation apparatus includes two oppositely arranged plasma guns each injecting a discharge gas to be ionized, and having a cathode for emitting electrons, and a converging coil for forming a magnetic flux to guide the emitted electrons, and polarities of the converging coils with respect to the cathodes in the two plasma guns are opposite to each other. | 04-23-2015 |
20150114823 | BIPOLAR COLLIMATOR UTILIZED IN A PHYSICAL VAPOR DEPOSITION CHAMBER - The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator. | 04-30-2015 |
20150114824 | PHYSICAL VAPOR DEPOSITION TILE ARRANGEMENT AND PHYSICAL VAPOR DEPOSITION ARRANGEMENT - In various embodiments, a physical vapor deposition tile arrangement is provided. The physical vapor deposition tile arrangement may include a plurality of physical vapor deposition tiles arranged next to each other; and a resilient structure configured to press the plurality of physical vapor deposition tiles together. | 04-30-2015 |
20150114825 | SYSTEMS AND METHOD OF COATING AN INTERIOR SURFACE OF AN OBJECT - A system for use in coating an interior surface of an object, the system including a vacuum chamber enclosure defining an interior cavity configured to receive the object, a first electrode positioned within the interior cavity of the vacuum chamber enclosure, and a second electrode positioned within the interior cavity such that a space between the first and second electrodes is at least partially defined by the interior surface of the object. The first electrode is fabricated from a first material and the second electrode is fabricated from a second material. The system includes an arc supply coupled to the first and second electrodes. The arc supply selectively vaporizes material from one of the first electrode and the second electrode when current is supplied from one of the first and second electrodes such that the vaporized material forms a layer of material on the interior surface of the object. | 04-30-2015 |
20150114826 | PVD APPARATUS FOR DIRECTIONAL MATERIAL DEPOSITION, METHODS AND WORKPIECE - Directional material deposition in physical vapor deposition (PVD) technology. In particular, the invention concerns PVD apparatus, which comprises a vacuum tight outer vessel accommodating a material source, at least two substrates arranged to define a substrate plane spaced apart from said material source, substrates facing the material source with a surface to be treated. The diameter of this material source is smaller, in particular significantly smaller, than the diameter of any of the substrates. Narrow angular distribution and a high level of uniformity is achieved at low substrate temperature. | 04-30-2015 |
20150136584 | METHODS OF DEPOSITING THIN FILMS USING MOLYBDENUM SPUTTERING TARGETS - In various embodiments, tubular sputtering targets comprising molybdenum are provided and sputtered to produce thin films comprising molybdenum. The sputtering targets may be formed by forming a tubular billet having an inner diameter ID | 05-21-2015 |
20150307985 | ROTATION PLUS VIBRATION MAGNET FOR MAGNETRON SPUTTERING APPARATUS - In some embodiments, the present disclosure relates to a plasma processing system having a magnetron that provides a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron has a magnetic element that generates a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft that rotates the magnetic element about a center of the sputtering target. The elastic element may vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time. | 10-29-2015 |
20150318152 | SPUTTERING TARGETS AND METHODS - Multi-component sputtering target structures suitable for deposition of metallic alloy films are provided. The multi-component target may be formed by winding wires of different materials around a target support structure to form a dense winding. The sputtering target structures and methods of the invention can be used to produce a variety of refractory metal alloy films. | 11-05-2015 |
20150357171 | METHODS AND APPARATUS FOR IMPROVED METAL ION FILTERING - Methods and apparatus for improved metal ion filtering are provided herein. In some embodiments, a substrate processing apparatus includes: a chamber body and a chamber lid disposed on the chamber body defining a processing region within the chamber body beneath the lid; a collimator disposed in the processing region; a power source coupled to the collimator; and a first set of magnets disposed around the chamber body above the collimator and a second set of magnets disposed around the chamber body and below the collimator that together create a guidance magnetic field that is substantially orthogonal to the collimator. | 12-10-2015 |
20150368783 | DEPOSITION APPARATUS WITH GAS SUPPLY AND METHOD FOR DEPOSITING MATERIAL - An apparatus for depositing a material on a substrate is described. The apparatus includes a vacuum chamber; a substrate receiving portion in the vacuum chamber for receiving the substrate during deposition of the material; a target support configured to hold a target during deposition of the material on the substrate; a plasma generating device in the vacuum chamber for generating a plasma between the substrate receiving portion and the target support; and a first gas inlet for providing a supersonic stream of a gas, wherein the gas inlet is directed towards the substrate receiving portion. Further, a method for depositing a material on a substrate in a vacuum chamber is described. The method includes forming a plasma between the substrate and a target; releasing particles from the target using the plasma; and directing a supersonic stream of gas towards the substrate surface, on which the material is to be deposited. | 12-24-2015 |
20150368792 | METHOD OF HIPIMS SPUTTERING AND HIPIMS SPUTTER SYSTEM - So as to control the operation of a sputter target ( | 12-24-2015 |
20150376774 | SPUTTERING APPARATUS AND METHOD THEREOF - A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space. | 12-31-2015 |
20160002769 | PVD PROCESSING APPARATUS AND PVD PROCESSING METHOD - A PVD processing apparatus and method capable of forming a composite coating having a coating thickness with excellent circumferential uniformity on an outer peripheral surface of a substrate. The PVD processing apparatus includes: a vacuum chamber; a revolving table revolving a plurality of substrates around an revolution axis in the vacuum chamber; a plurality of rotating tables rotating the substrates about their rotation axis parallel to the revolution axis on the revolution table; a plurality of types of targets provided radially outside the revolving table at circumferentially spaced positions; and a table rotating mechanism rotating the rotating table by an angle of 180° or more while the substrates passes through a region between two tangent lines drawn from a center of the target to an arc enveloping the rotating tables. | 01-07-2016 |
20160005577 | Pulsed Sputtering Apparatus and Pulsed Sputtering Method - An object of the invention is to reduce sizes of an inert gas supply and exhaust devices used for a pulse sputtering device. Another object is to efficiently supply suitable quantity of the inert gas to a place where the inert gas is required in the pulse sputtering device. Therefore, a provided pulse sputtering device has a sputtering source that performs pulse discharge and generates plasma, a gas injection valve that injects and supplies an inert gas to the sputtering source and a controller that controls the sputtering source and the gas injection valve. The controller controls the sputtering source and the gas injection valve such that the gas injection valve injects the inert gas intermittently and such that a part of a period, in which the pulse discharge occurs in the sputtering source, overlaps with a part of a period, in which the gas injection valve injects and supplies the inert gas. | 01-07-2016 |
20160032446 | FILM FORMING APPARATUS AND FILM FORMING METHOD - A film forming apparatus, for forming a metal oxide film on an object, includes a holding unit and a heating unit. The holding unit includes a first heater and holds the object in a processing chamber. A first heater power supply supplies power to the first heater. A target electrode is electrically connected to a metal target provided above the holding unit. A sputtering power supply is electrically connected to the target electrode. An introduction mechanism supplies an oxygen gas toward the holding unit. The heating unit includes a second heater for heating the object and a moving mechanism for moving the second heater between a region in a first space disposed above the holding unit and a region in a second space separated from the first space. A second heater power supply supplies power to the second heater. | 02-04-2016 |
20160035546 | HELMHOLTZ COIL ASSISTED PECVD CARBON SOURCE - The embodiments disclose an apparatus including at least two carbon source deposition tools for emitting electrons, at least two reflective polarity rear button permanent magnets integrated into the carbon source deposition tools for reflecting emitted electrons, and at least two paired polarity Helmholtz coils integrated into the carbon source deposition tools for forming uniform parallel magnetic field lines for confining the emitted electrons to uniformly deposit carbon onto the surfaces of a two-sided media disk. | 02-04-2016 |
20160035547 | MAGNETRON ASSEMBLY FOR PHYSICAL VAPOR DEPOSITION CHAMBER - Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis and rotatable about the central axis, a closed loop magnetic pole coupled to a first surface of the shunt plate and disposed 360 degrees along a peripheral edge of the shunt plate, and an open loop magnetic pole coupled at a the first surface of the shunt plate wherein the open loop magnetic pole comprises two rows of magnets disposed about the central axis. | 02-04-2016 |
20160056024 | METHODS AND APPARATUS FOR MAINTAINING LOW NON-UNIFORMITY OVER TARGET LIFE - Embodiments of improved methods and apparatus for maintaining low non-uniformity over the course of the life of a target are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition chamber includes: disposing a substrate atop a substrate support having a cover ring that surrounds the substrate support such that an upper surface of the substrate is positioned at a first distance above an upper surface of the cover ring; sputtering a source material from a target disposed opposite the substrate support to deposit a film atop the substrate while maintaining the first distance; and lowering the substrate support with respect to the cover ring and sputtering the source material from the target to deposit films atop subsequent substrates over a life of the target. | 02-25-2016 |
20160068948 | DEFECT REDUCTION IN META-MODE SPUTTER COATINGS - Sputter deposition systems and methods for depositing film coatings on one or more substrates are disclosed. The systems and methods are used to prevent or reduce an amount of defects within a deposited film. The methods involve removing defect-related particles that are formed during a deposition process from certain regions of the sputter deposition system and preventing the defect-related particles from detrimentally affecting the quality of the deposited film. In particular embodiments, methods involve creating a flow of gas from a deposition region to a particle collection region the sputter deposition system such that the defect-related particles are entrained within the flow of gas and away from the deposition region. In particular embodiments, the sputter deposition system is a meta-mode sputter deposition system. | 03-10-2016 |
20160099135 | Rectangular Hollow Sputter Source and Method of use Thereof - A rectangular hollow sputtering source includes a box-shaped cathode including therethrough an aperture that is open at a first side and a second side of the box-shaped cathode. A cooling block surrounds the box-shaped cathode and a number of magnets are disposed in the cooling block around the aperture. An electrical insulating part surrounds and electrically isolates the cooling block, the bar magnets, and the cathode from an anode which surrounds the exterior of the electrical insulating part. | 04-07-2016 |
20160104607 | METHOD OF AND MAGNET ASSEMBLY FOR HIGH POWER PULSED MAGNETRON SPUTTERING - A magnet assembly for use in high power pulsed magnetron sputtering comprises a configuration of magnets having a magnetic field topology comprising magnetic field components B | 04-14-2016 |
20160115585 | APPARATUS FOR DIRECT-WRITE SPUTTER DEPOSITION AND METHOD THEREFOR - A microplasma sputter deposition system suitable for directly writing two-dimensional and three-dimensional structures on a substrate is disclosed. Deposition systems in accordance with the present invention include a magnetic-field generator that provides a magnetic field that is aligned with the arrangement of an anode and a wire target. This results in a plasma discharge within a region between a wire target and an anode that is substantially a uniform sheet, which gives rise to the deposition of material on the substrate in highly uniform and radially symmetric fashion. | 04-28-2016 |
20160118231 | Method and Device for Generating an Electrical Discharge - A device and method for generating an electrical discharge are described. A first electrode ( | 04-28-2016 |
20160118233 | WAVEFORM FOR IMPROVED ENERGY CONTROL OF SPUTTERED SPECIES - This disclosure describes systems and methods for regulating the density and kinetic energy of ions in a sputtering deposition chamber. A pulsed DC waveform with a modulated RF signal is generated and applied to the sputtering chamber. Upon termination of a cycle of the pulsed DC waveform, a reverse voltage spike is generated. This reverse voltage spike reverses the polarity of the cathode and anode of the sputtering chamber for some period of time. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. A controller may be employed to control the timing and duration of the application of the DC waveform, the timing and duration of the RF waveform, and the engagement of the reverse limiting circuit. | 04-28-2016 |
20160133446 | MOVING MAGNET ASSEMBLY TO INCREASE THE UTILITY OF A RECTANGULAR MAGNETRON SPUTTERING TARGET - A method and apparatus is disclosed for improved magnetron sputtering utilizing a movable magnet. Preferably, the apparatus can be used to move the magnet along any two dimensional paths within the range of the moving stages. In one preferred method for sputtering a coating using a magnetron sputtering apparatus comprises the step of moving a magnet assembly in two dimensions during the sputtering process to allow increased erosion area of the target as compared to stationary magnets. In another preferred embodiment the invention includes a magnetron sputtering apparatus comprising a first motion stage allowing movement in a first direction, a second motion stage allowing movement in second direction, a magnet assembly operably attached to said first and second motion stages, and a control unit, wherein said first motion stage moves in a general first direction and second motion stage moves in a generally second direction which is generally orthogonal and wherein said control unit controls the movement of the motion stages. | 05-12-2016 |
20160160340 | SPUTTERING DEVICE AND METHOD OF FORMING LAYER USING THE SAME - The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process. | 06-09-2016 |
20160163521 | INTERCHANGEABLE MAGNET PACK - An apparatus includes a target, wherein the target includes a nonuniform erosion profile. The apparatus also includes a number of interchangeable magnetic and non-magnetic inserts. The interchangeable magnetic and non-magnetic inserts are configured to control a pass through flux based on the nonuniform erosion profile. | 06-09-2016 |
20160177438 | METHOD FOR SPUTTERING SYSTEM AND USING COUNTERWEIGHT | 06-23-2016 |
20160186315 | DEPOSITION DEVICE AND METHOD FOR DRIVING THE SAME - A deposition device including a chamber configured to provide a space in which a process is performed with respect to a substrate; a substrate support arranged on a bottom side of an inner portion of the chamber and on which the substrate is seated; an upper electrode arranged above the substrate support to be spaced apart from the substrate support; a shower head arranged between the substrate support and the upper electrode and configured to come in contact with the upper electrode, and formed to jet a reaction gas or a cleaning gas in a direction of the substrate support; a reaction gas supply pipe penetrating the chamber and installed on the upper electrode; and a cleaning gas supply pipe penetrating the chamber and arranged on the upper electrode independently of the reaction gas supply pipe. | 06-30-2016 |
20160189939 | MINI ROTATABLE SPUTTER DEVICES FOR SPUTTER DEPOSITION - A deposition apparatus and a method for depositing deposition material on a web is described. The deposition apparatus includes a first sputter device support defining a first axis for a first rotatable sputter device, a second sputter device support defining a second axis for a second rotatable sputter device, and a coating window. The first sputter device support and the second sputter device support are adapted for supporting the first rotatable sputter device and the second rotatable sputter device to provide at least a component of the deposition material to be deposited on the web over a coating drum. Further, the distance between the first axis and the second axis is smaller than 200 mm. | 06-30-2016 |
20160203956 | ETCHING SOURCE INSTALLABLE IN A STORAGE MEDIUM PROCESSING TOOL | 07-14-2016 |
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20190144992 | SPUTTERING APPARATUS AND METHOD OF OPERATING THE SAME | 05-16-2019 |