| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 204192250 | Semiconductor | 60 |
| 20080264777 | THIN FILM SEMICONDUCTOR MATERIAL PRODUCED THROUGH REACTIVE SPUTTERING OF ZINC TARGET USING NITROGEN GASES - The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility. | 10-30-2008 |
| 20090020417 | Methods of sputtering a protective coating on a semiconductor substrate - Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture. | 01-22-2009 |
| 20090078566 | Deposited Film Forming Method, Deposited Film Forming Device, Deposited Film, and Photosensitive Member Provided with the Deposited Film - The present invention relates to a method of forming a deposited film including a first step for setting a deposited film forming target ( | 03-26-2009 |
| 20090090618 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - It is an object of the present invention to provide a solar cell, and a method for manufacturing the same, that includes a layer having Zn, Mg, and O, and with which an increase in efficiency can be achieved. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, the layer A includes Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga, and photoelectromotive force is generated due to light that is incident from the second electrode layer side. | 04-09-2009 |
| 20090120787 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A barrier film of a semiconductor device is formed. The present invention forms a middle layer having copper as a main component and including a predetermined quantity of diffusible metal with the addition of a reaction gas, by sputtering an alloy target having copper as a main component with the addition of a diffusible metal, while supplying a reaction gas including oxygen or nitrogen. Since contents of the diffusible metal are accurately controlled when heating the middle layer, the barrier film is certainly formed. Additionally, the reaction gas is added to the middle layer so that the reactivity of the diffusible metal becomes high; and accordingly, it is possible to form the barrier film at a heating temperature lower than the conventional art. | 05-14-2009 |
| 20090134016 | UNDERBUMP METALLURGY EMPLOYING SPUTTER-DEPOSITED NICKEL TITANIUM COPPER ALLOY - A metallic adhesion layer is formed on a last level metal plate exposed in an opening of a passivation layer. A Ni—Cu alloy in which the weight percentage of Ni is from about 50% to about 70% is deposited by sputtering onto the metallic adhesion layer to form an underbump metallic layer. Optionally, a wetting layer comprising Cu or Au may be deposited by sputtering. A C4 ball is applied to a surface of the underbump metallic layer comprising the Ni—Cu alloy or the wetting layer for C4 processing. The sputter deposition of the Ni—Cu alloy offers economic advantages relative to known methods in the art since the Ni—Cu alloy in the composition of the present invention is non-magnetic and easy to sputter, and the consumption of the inventive Ni—Cu alloy is limited during C4 processing. | 05-28-2009 |
| 20090145746 | Manufacturing apparatus and method for large-scale production of thin-film solar cells - A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(In | 06-11-2009 |
| 20090294280 | Multilayer Film Forming Method and Multilayer Film Forming Apparatus - A multilayer film formation method enables the formation of a multilayer including a complex oxide layer and having the desired shape of an element without performing an etching process. The method positions a first mask ( | 12-03-2009 |
| 20100006425 | METHODS OF FORMING A LAYER FOR BARRIER APPLICATIONS IN AN INTERCONNECT STRUCTURE - Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber. | 01-14-2010 |
| 20100133093 | Method for alkali doping of thin film photovoltaic materials - A method of manufacturing a solar cell includes providing a substrate, depositing a first electrode comprising an alkali-containing transition metal layer over the substrate, depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, depositing an n-type semiconductor layer over the p-type semiconductor absorber layer, and depositing a second electrode over the n-type semiconductor layer. The step of depositing the alkali-containing transition metal layer includes sputtering from a first target comprising the transition metal and a second target comprising the alkali metal, where a composition of the first target is different from a composition of the second target. | 06-03-2010 |
| 20100140079 | PREPARATION OF A PH SENSOR, THE PREPARED PH SENSOR, SYSTEM COMPRISING THE SAME AND MEASUREMENT USING THE SYSTEM - Preparation of a pH sensor, the prepared pH sensor, system comprising the same, and measurement using the system. The pH sensor is an extended gate field effect transistor (EGFET) structure. The preparation includes the steps of providing an extended gate ion sensitive field effect transistor comprising an extended gate region, forming a titanium nitride film on the extended gate region by RF sputtering deposition to obtain a pH sensor. | 06-10-2010 |
| 20100193352 | METHOD FOR MANUFACTURING SOLAR CELL - The present invention relates to a method for manufacturing a solar cell provided with a buffer layer or an intermediate electrode. The buffer layer is disposed between a rear electrode and a photovoltaic cell. The rear electrode is disposed on the opposite side of a light incidence side and functions as an electrode for extracting electric power. The intermediate electrode is disposed between a plurality of photovoltaic cells. The intermediate electrode or the buffer layer comprises a ZnO-based transparent conductive film. The method comprises forming the intermediate electrode or the buffer layer by sputtering a target on which a formation material of the transparent conductive film is provided while applying sputtering voltage to generate a horizontal magnetic field on a surface of the target. The intermediate electrode or the buffer layer is formed through sputtering at a sputtering voltage of 340V or less. | 08-05-2010 |
| 20100206719 | METHOD FOR MANUFACTURING SOLAR CELL - A method for manufacturing a solar cell provided with an upper electrode which functions as an electrode for extracting electric power at a light incidence side of the solar cell and includes a ZnO-based transparent conductive film, the method comprising: forming the upper electrode by sputtering a target on which a formation material of the transparent conductive film is provided while applying sputtering voltage of 340V or less and generating a horizontal magnetic field on a target surface. | 08-19-2010 |
| 20110005922 | Methods and Apparatus for Protecting Plasma Chamber Surfaces - A method for creating a protective layer over a surface of an object comprising aluminum and magnesium for use in a semiconductor processing system, which includes oxidizing the surface of the object using a plasma electrolytic oxidation process. The method also includes generating a halogen-comprising plasma by exciting a gas comprising a halogen. The method also includes exposing the oxidized surface to the halogen-comprising plasma or excited gas. | 01-13-2011 |
| 20110048928 | METHODS TO FABRICATE NON-METAL FILMS ON SEMICONDUCTOR SUBSTRATES USING PHYSICAL VAPOR DEPOSITION - Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or for controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film. | 03-03-2011 |
| 20110062016 | METHOD FOR MANUFACTURING ALUMINUM-CONTAINING NITRIDE INTERMEDIATE LAYER, METHOD FOR MANUFACTURING NITRIDE LAYER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT - There is provided a method for manufacturing an aluminum-containing nitride intermediate layer, a method for manufacturing a nitride layer, and a method for manufacturing a nitride semiconductor element by using the nitride layer, in which at least one of the following conditions (i) to (iii) is employed during stacking of the aluminum-containing nitride intermediate layer by using a DC magnetron sputtering method in which a voltage is applied by means of a DC-continuous scheme. | 03-17-2011 |
| 20110067997 | SYNTHESIS OF HIGH-PURITY BULK COPPER INDIUM GALLIUM SELENIDE MATERIALS - A method for forming a high purity, copper indium gallium selenide (CIGS) bulk material is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction vessel. The precursor materials include copper, at least one chalcogen selected from selenium, sulfur, and tellurium, and at least one element from group IIIA of the periodic table, which may be selected from gallium, indium, and aluminum. The sealed reaction vessel is heated to a temperature at which the precursor materials react to form the bulk material. The bulk material is cooled in the vessel to a temperature below the solidification temperature of the bulk material and opened to release the formed bulk material. A sputtering target formed by the method can have an oxygen content of 10 ppm by weight, or less. | 03-24-2011 |
| 20110127157 | LOW IMPEDANCE PLASMA - A magnetron sputtering apparatus ( | 06-02-2011 |
| 20110127158 | MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In a copper damascene wiring process, a tantalum-based laminated film, which is used as a barrier metal film, is continuously formed in a sputtering deposition chamber. When the continuous deposition process is discontinuously applied to a number of wafers, a tantalum film and a tantalum nitride film which are relatively thin are alternately deposited over an inner surface of a shield in a sputter deposition chamber, which results in a thickness of the deposited film being on the order of several thousand nanometers. The deposited film peels off due to internal stress therein to generate foreign material or particles. To counteract this, a tantalum film, which is much thicker than the tantalum film formed over the wafer at one time, is formed over the substantially inner wall of the chamber at predetermined intervals when repeatedly depositing the tantalum nitride film and the tantalum film in the sputtering deposition chamber. | 06-02-2011 |
| 20110132745 | METHOD OF FABRICATING VARIABLE RESISTANCE LAYER FOR RESISTANCE MEMORY - A method of fabricating a variable resistance layer of a resistance memory is disclosed. The method includes placing a substrate in a sputtering chamber that has a copper target and a silicon oxide (SiO | 06-09-2011 |
| 20110180392 | SPUTTERING TARGET FOR OXIDE SEMICONDUCTOR, COMPRISING InGaO3(ZnO) CRYSTAL PHASE AND PROCESS FOR PRODUCING THE SPUTTERING TARGET - Disclosed is a sputtering target for an oxide semiconductor, comprising In, Ga, and Zn. Also disclosed are a process for producing the sputtering target, a thin film of an oxide semiconductor using a sputtering target, and a method for thin-film transistor formation. The sputtering target comprises an oxide sintered compact containing a compound having a homologous crystal structure represented by InGaO | 07-28-2011 |
| 20110198212 | SPUTTERING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A sputtering apparatus ( | 08-18-2011 |
| 20110198213 | Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor - [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer. | 08-18-2011 |
| 20110203916 | MAGNETRON-SPUTTERING FILM-FORMING APPARATUS AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE - A magnetron-sputtering film-forming apparatus includes: a vacuum film-forming chamber ( | 08-25-2011 |
| 20110240462 | DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object of one embodiment of the present invention is to provide a deposition apparatus for depositing an oxide semiconductor film into which impurities are not mixed. Another object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor film into which impurities are not mixed. Impurities are removed from an environment including a deposition apparatus, whereby a gas containing impurities may be prevented from leaking from the outside of the deposition apparatus to the inside thereof. In addition, an oxide semiconductor layer containing reduced impurities which is deposited by the apparatus may be applied to the semiconductor device. | 10-06-2011 |
| 20120118726 | IN-GA-ZN-O TYPE SPUTTERING TARGET - A sputtering target including an oxide sintered body which includes In, Ga and Zn and includes a structure having a larger In content than that in surrounding structures and a structure having larger Ga and Zn contents than those in surrounding structures. | 05-17-2012 |
| 20120138453 | SILICON TARGET FOR SPUTTERING FILM FORMATION AND METHOD FOR FORMING SILICON-CONTAINING THIN FILM - A silicon target for sputtering film formation which enables formation of a high-quality silicon-containing thin film by inhibiting dust generation during sputtering film formation is provided. An n-type silicon target material | 06-07-2012 |
| 20120152728 | SPUTTERING TARGET, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A deposition technique for forming an oxynitride film is provided. A highly reliable semiconductor element is manufactured with the use of the oxynitride film. The oxynitride film is formed with the use of a sputtering target including an oxynitride containing indium, gallium, and zinc, which is obtained by sintering a mixture of at least one of indium nitride, gallium nitride, and zinc nitride as a raw material and at least one of indium oxide, gallium oxide, and zinc oxide in a nitrogen atmosphere. In this manner, the oxynitride film can contain nitrogen at a necessary concentration. The oxynitride film can be used for a gate, a source electrode, a drain electrode, or the like of a transistor. | 06-21-2012 |
| 20120152729 | Method for Producing Thermoelectric Layers - The invention relates to a method for producing thermoelectric layers by depositing thermoelectric material on a substrate by means of sputter deposition. In order to create a method for producing thermoelectric layers that are better suited for use in thermogenerators, and in particular have higher Seebeck coefficients, the production of a target made of thermoelectric material is proposed by mixing at least two powdered starting materials having a particle size from 0.01 μm-5000 μm, while coupling in energy and depositing the thermoelectric material from the target on the substrate by way of magnetron sputter deposition. | 06-21-2012 |
| 20120186975 | METHOD AND SYSTEM FOR LARGE SCALE MANUFACTURE OF THIN FILM PHOTOVOLTAIC DEVICES USING MULTI-CHAMBER CONFIGURATION - A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and forming a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes. | 07-26-2012 |
| 20120211354 | UNIFORMITY TUNING CAPABLE ESC GROUNDING KIT FOR RF PVD CHAMBER - Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery. | 08-23-2012 |
| 20130001069 | SPUTTERING TARGET, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT - According to an embodiment, two or more sets of knead forging are performed where one set is cold forging processes in directions parallel to and perpendicular to a thickness direction of a columnar titanium material. The titanium material is heated to a temperature of 700° C. or more to induce recrystallization, and thereafter, two or more sets of knead forging are performed where one set is the cold forging processes in the directions parallel to and perpendicular to the thickness direction. Further, the titanium material is cold rolled, and is heat-treated to a temperature of 300° C. or more. | 01-03-2013 |
| 20130008778 | PHYSICAL VAPOR DEPOSITION CHAMBER WITH CAPACITIVE TUNING AT WAFER SUPPORT - In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator. | 01-10-2013 |
| 20130075247 | METHOD AND SYSTEM FOR FORMING CHALCOGENIDE SEMICONDUCTOR MATERIALS USING SPUTTERING AND EVAPORATION FUNCTIONS - A method and system for forming a chalcogenide or chalcopyrite-based semiconductor material provide for the simultaneous deposition of metal precursor materials from a target and Se radials from a Se radical generation system. The Se radical generation system includes an evaporator that produces an Se vapor and a plasma chamber that uses a plasma to generate a flux of Se radicals. Multiple such deposition operations may take place in sequence, each having the deposition temperature accurately controlled. The deposited material may include a compositional concentration gradient or may be a composite material, and may be used as an absorber layer in a solar cell. | 03-28-2013 |
| 20130146444 | Magnetron With Gradually Increasing Magnetic Field Out of Turnarounds - A magnetron include a center plurality of magnets and an outer plurality of magnets arranged around the center plurality of magnets in a shape of two long sections and two shorter turnaround sections. The outer plurality of magnets are configured with at least one region of weaker magnetic field strength in at least one of the two long sections and adjacent to one of the two turnaround sections. | 06-13-2013 |
| 20130199926 | Novel Multi Coil Target Design - In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces). | 08-08-2013 |
| 20130277206 | EPITAXIAL FILM FORMING METHOD, SPUTTERING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND ILLUMINATION DEVICE - The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an α—Al | 10-24-2013 |
| 20130277207 | MANUFACTURING APPARATUS - The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber. | 10-24-2013 |
| 20130341181 | ZINC OXIDE-BASED SPUTTERING TARGET, METHOD OF MANUFACTURING THE SAME, AND THIN-FILM TRANSISTOR HAVING BARRIER LAYER DEPOSITED USING THE SAME - A zinc oxide (ZnO)-based sputtering target, a method of manufacturing the same, and a thin-film transistor (TFT) having a barrier layer deposited using the same. The zinc oxide-based sputtering target includes a sinter containing zinc oxide doped with gallium oxide, the content of the gallium oxide ranging, by weight, from 10 to 50 percent of the sinter, and a backing plate bonded to the rear surface of the sinter to support the sinter. The zinc oxide-based sputtering target can be subjected to direct current (DC) sputtering, and improve the contact and etching characteristics of a barrier layer that is deposited using the same. | 12-26-2013 |
| 20140021038 | SPUTTERING TARGET, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - An object is to provide a sputtering target capable of obtaining a film having favorable characteristics. | 01-23-2014 |
| 20140042018 | SPUTTERING TARGET AND METHOD FOR USING THE SPUTTERING TARGET - To provide a sputtering target with which a crystalline metal oxide film can be formed. The sizes of crystal grains or crystal regions of the metal oxide included in the sputtering target are made uniform. Further, the crystal grains or the crystal regions are made smaller. Specifically, the sputtering target includes a polycrystalline metal oxide in which an average of grain sizes of the crystal grains is greater than or equal to 0.1 μm and less than or equal to 3 μm and a standard deviation of the grain sizes of the crystal grains is less than or equal to ½ of the average of the grain sizes of the crystal grains. Alternatively, the sputtering target includes a metal oxide having a plurality of crystal regions in which c-axes are aligned perpendicularly to a surface. | 02-13-2014 |
| 20140083841 | THIN FILM-FORMING METHOD - A method of forming a thin-film includes: a normal deposition step of depositing a thin-film on a substrate by performing discharge among a plurality of targets, and by providing an inert gas and a reactive gas into a processing chamber, with a magnet section being reciprocated along a target section formed by these targets; and a discharge starting step of starting a discharge at the target section prior to the normal deposition step, in a state in which a flow ratio of the reactive gas to the inert gas is larger than a flow ratio of the reactive gas to the inert gas in the normal deposition step. | 03-27-2014 |
| 20140110249 | SPUTTERING TARGET, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - The purpose of the present invention is to provide a sputtering target with which a film having excellent characteristics can be obtained. A sputtering target ( | 04-24-2014 |
| 20140174914 | Methods and Systems for Reducing Particles During Physical Vapor Deposition - Embodiments provided herein describe methods and systems for depositing material onto a surface. A target including a material in a porous state is provided. The density of the material in the porous state is less than 93% of the absolute density of the material. The target is positioned over a surface. At least some of the material is caused to be ejected from the target and deposited onto the surface. Films deposited from the porous targets exhibit significantly fewer particle defects than films of the same material deposited from the conventionally preferred higher-density targets. Brittle materials, such as alloys of refractory metals and silicon, seem to particularly benefit. The larger, less-uniform layered grains of the porous targets seem less prone to 10-micron-scale delamination than the smaller, more uniform grains of denser targets. | 06-26-2014 |
| 20140209452 | PLANT AND METHOD FOR PRODUCING A SEMICONDUCTOR FILM - The plant is suitable to produce a semiconductor film ( | 07-31-2014 |
| 20140262754 | PHYSICAL VAPOR DEPOSITION METHODS AND SYSTEMS TO FORM SEMICONDUCTOR FILMS USING COUNTERBALANCE MAGNETIC FIELD GENERATORS - Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate | 09-18-2014 |
| 20140339073 | Sputtering Target and Oxide Semiconductor Film - A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa | 11-20-2014 |
| 20140339074 | WAFER CLAMP ASSEMBLY FOR HOLDING A WAFER DURING A DEPOSITION PROCESS - A wafer clamp assembly for holding a wafer during a deposition process comprises an outer annular member defining a central recess that has a diameter slightly greater than the diameter of the wafer. A plurality of finger members are carried by the outer annular member and extend radially inwardly from the outer annular member into the central recess, wherein each of the finger members has a free end for contacting the wafer during the deposition process. | 11-20-2014 |
| 20140360864 | APPARATUS AND METHODS FOR FORMING CHALCOPYRITE LAYERS ONTO A SUBSTRATE - A method generally comprises providing heat to a substrate in at least one buffer chamber and transferring the substrate to at least one deposition chamber that is coupled to the buffer chamber via an conveyor. The method also includes depositing a first set of a plurality of elements, using sputtering, and a second set of a plurality of elements, using evaporation, onto at least a portion of the substrate in the deposition chamber. | 12-11-2014 |
| 20150047972 | METHOD OF MANUFACTURING TARGET FOR SPUTTERING AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - A method of manufacturing a sputtering target includes: preparing a sputtering target material including a low temperature viscosity transition (LVT) inorganic material, melting the sputtering target material at a working pressure that is lower than atmospheric pressure, and processing the melted sputtering target material to thereby form the sputtering target. | 02-19-2015 |
| 20150107988 | METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM - A method for forming an oxide semiconductor film using a sputtering apparatus including a target containing a crystalline In—Ga—Zn oxide, a substrate, and a magnet includes the following steps: generating plasma between the target and the substrate; and separating a flat-plate-like In—Ga—Zn oxide in which a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including an indium atom and an oxygen atom, and a third layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order. The flat-plate-like In—Ga—Zn oxide passes through the plasma and thus is negatively charged. Then, while keeping crystallinity, the oxide gets close to a top surface of the substrate, moves over the top surface of the substrate due to a magnetic field of the magnet and current flowing from the substrate to the target, and then is deposited. | 04-23-2015 |
| 20150129416 | METHOD FOR USING SPUTTERING TARGET AND METHOD FOR MANUFACTURING OXIDE FILM - A method for using a sputtering target which enables an oxide film with a high degree of crystallinity, which contains a plurality of metal elements, to be formed is provided. In the method for using a sputtering target including a polycrystalline oxide containing a plurality of crystal grains which include a cleavage plane, an ion is made to collide with the sputtering target to separate sputtered particles from the cleavage plane, and the sputtered particles are positively charged, so that the sputtered particles are deposited uniformly on a deposition surface while repelling each other. | 05-14-2015 |
| 20150318171 | METHOD FOR MANUFACTURING OXIDE - An oxide that can be used as a semiconductor of a transistor or the like is manufactured. In particular, an oxide having few defects such as grain boundaries is manufactured. By a magnetron sputtering method in which a magnetic field containing a component in a direction parallel to a substrate is applied, the magnetic field includes a region with a magnetic flux density of greater than or equal to 10 G and less than or equal to 100 G, and a target is a crystal body or a polycrystalline body, a crystal in the crystal body or the polycrystalline body is made to have a pellet-like shape, fly in plasma, and be stacked on a formation surface to be arranged parallel or substantially parallel to the formation surface. | 11-05-2015 |
| 20150332901 | Cu-Ga BINARY ALLOY SPUTTERING TARGET AND METHOD OF PRODUCING THE SAME - A Cu—Ga binary alloy sputtering target having excellent mechanical workability, high density, and high bending strength, and a method of producing the sputtering target are provided. The sputtering target has a composition including 28 to 35 atomic % of Ga and the balance made of Cu and inevitable impurities. In addition, the sputtering target has a coexistence microstructure in which a low-Ga-containing Cu—Ga binary alloy phase is surrounded by a high-Ga-containing Cu—Ga binary alloy phase. The low-Ga-containing Cu—Ga binary alloy phase includes 26 atomic % or less of Ga and a balance made of Cu. The high-Ga-containing Cu—Ga binary alloy phase includes 28 atomic % or more of Ga. | 11-19-2015 |
| 20150368788 | (Ga) Zn Sn Oxide Sputtering Target - A sputtering target having a one-piece top coat comprising a mixture of oxides of zinc, tin, and optionally gallium, characterized in that said one-piece top coat has a length of at least 80 cm; a method for forming such a sputtering target and the use of such a target for forming films. | 12-24-2015 |
| 20150371847 | METHOD FOR CONTROLLING SEMICONDUCTOR DEPOSITION OPERATION - The present disclosure provides a method for controlling a semiconductor deposition operation. The method includes (i) identifying a first target lifetime in a physical vapor deposition (PVD) system; (ii) inputting the first target lifetime into a processor; (iii) outputting, by the processor, a plurality of first operation parameters according to a plurality of compensation curves; and (iv) performing the first operation parameters in the PVD system. The first operation parameters includes, but not limited to, an RF power tuning, a DC voltage tuning, a target to chamber pedestal spacing tuning, an AC bias tuning, an impedance tuning, a reactive gas flow tuning, an inert gas flow tuning, a chamber pedestal temperature tuning, or a combination thereof. | 12-24-2015 |
| 20150372231 | METHODS TO FABRICATE NON-METAL FILMS ON SEMICONDUCTOR SUBSTRATES USING PHYSICAL VAPOR DEPOSITION - Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or for controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film. | 12-24-2015 |
| 20160108515 | METHOD FOR FILLING VIAS AND SUBSTRATE-VIA FILLING VACUUM PROCESSING SYSTEM - Vias of at least approx. 1:1 aspect ratio in substrates are filled with material which exhibits a thermally driven amorphous/crystalline phase change. This is performed within a vacuum process chamber. During a first timespan the material is sputter-deposited by DC sputtering from a material target. In a subsequent timespan a void, which may remain in the via as material covered by the addressed sputtering, is opened by etching performed with the help of an inductively coupled plasma generated by an Rf driven electric coil and applying to the substrate with the via an Rf bias. | 04-21-2016 |
| 20160130693 | METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING APPARATUS OF THE SAME - According to one embodiment, a method of manufacturing a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a cap layer on the first magnetic layer, heating a base including the cap layer after the cap layer is formed, forming a nonmagnetic layer on the cap layer while the base is heated, cooling the base including the nonmagnetic layer after the nonmagnetic layer is formed, and forming a second magnetic layer on the nonmagnetic layer after the base is cooled. | 05-12-2016 |
| 20180023188 | OXIDE SINTERED MATERIAL, METHOD OF PRODUCING OXIDE SINTERED MATERIAL, SPUTTERING TARGET, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE | 01-25-2018 |
