| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 204192220 | Insulator or dielectric | 25 |
| 20090014319 | TRANSPARENT INSULATING FILM, METHOD FOR PRODUCING THE SAME, AND SPUTTERING TARGET - A method for producing a transparent insulating film includes a step of forming a transparent insulating film on a substrate by sputtering using a zinc-aluminum alloy target containing 50% to 90% by weight zinc and 10% to 50% byt weight aluminum in a mixed gas atmosphere of an inert gas and oxygen gas. | 01-15-2009 |
| 20090166188 | METHOD FOR DEPOSITING ELECTRICALLY INSULATING LAYERS - Method for producing low-conductivity layers, especially insulating layers, on at least one workpiece by vacuum coating, wherein an electrical arc discharge is operated between at least one anode and one cathode of an arc source in an atmosphere containing reactive gas, and only a small external magnetic field essentially perpendicular to the target surface or none at all is generated at the surface of a target electrically connected to the cathode to assist the evaporation process, the degree of recoating of the surface by other coating sources being less than 10%, and the magnetic field being generated by a magnet system that comprises at least one axially polarized coil with a geometry similar in size to the target. | 07-02-2009 |
| 20090173622 | REACTIVE SPUTTERING WITH HIPIMS - A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio is provided. A target formed at least in part from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to at least partially contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can optionally be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode. | 07-09-2009 |
| 20100032290 | METHOD FOR FORMING CHALCOGENIDE FILM AND METHOD FOR MANUFACTURING RECORDING ELEMENT - A method for forming a chalcogenide film within a contact hole formed in an insulating layer on a substrate, includes: preparing a target having a composition the same as that of the chalcogenide film; setting a ratio L/T of a distance L with respect to a diameter T of the target to a value not less than 0.5 and not more than 1.5, where the diameter of the target is T (m) and the distance between the target and the substrate is L (m); and forming a chalcogenide film within the contact hole by a sputtering process in which a bias electric power is applied to the substrate and a sputtering electric power is applied to the target. | 02-11-2010 |
| 20100078315 | MICROSTRIP ANTENNA ASSISTED IPVD - The invention provides a microwave source to assist in sputtering deposition. Such a microwave source comprises a microstrip antenna that is attached to an end of a dielectric layer outside a sputtering target or cathode. The microstrip antenna comprising a dielectric coated metal strip radiates microwave between the sputtering cathode and a cathode dark space that is formed near the sputtering cathode. The microwave enhances plasma density in the cathode dark space. With the assistance of the microwave source, the sputtering target is able to operate at a lower pressure, a lower voltage and may yield higher deposition rates than without the microwave source. The target may have a generally circular or rectangular cross section. The microstrip may be of a curved strip such as a ring shape or a straight strip, depending upon the shape of the sputtering target. | 04-01-2010 |
| 20100116646 | A SENSING ELECTRODE FOR PH MEASUREMENT CHIEFLY IN BODILY FLUIDS - A sensing electrode consisting of electrically nonconductive underlay ( | 05-13-2010 |
| 20100206718 | PHYSICAL VAPOR DEPOSITION WITH IMPEDANCE MATCHING NETWORK - A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate. | 08-19-2010 |
| 20100252419 | Method of manufacturing a high density capacitor or other microscopic layered mechanical device - A method of producing high capacity capacitors with a very large number of layers. Alternating layers of conductive and insulating materials are deposited by ion deposition without breaking a vacuum or inert gas chamber. For planar substrates, layer deposition may proceed simultaneously on both sides of the substrate and on multiple substrates. Continuous deposition may be used for round substrates. Inner layers of a device may have a microscopic thickness in a range of about 80 to 140 Angstroms for aluminum oxide and about 40 to 70 Angstroms for aluminum to create an atomic proximity effect to improve capacitance. Defects may be accommodated by self-healing and by creation of isolation islands. | 10-07-2010 |
| 20110209989 | PHYSICAL VAPOR DEPOSITION WITH INSULATED CLAMP - A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, the cathode configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive, and an insulator configured to electrically isolate the substrate from the clamp. | 09-01-2011 |
| 20120073960 | MAGNETRON SPUTTERING APPARATUS AND ELECTRONIC COMPONENT MANUFACTURING METHOD - A magnetron sputtering apparatus includes a cathode electrode having a first surface and a second surface opposite to the first surface, a target attachable to the first surface of the cathode electrode, and a magnet unit which is adjacent to the second surface of the cathode electrode and forms a magnetic field on the target surface. The magnet unit includes a plurality of magnet pieces each having a first magnet member which is magnetized in a direction perpendicular to the target and is arranged with a magnetic pole end face oriented toward the target, and a second magnet member which is magnetized opposite to the first magnet member in the direction perpendicular to the target and is arranged in contact with the first magnet member with a magnetic pole end face being oriented toward the target. | 03-29-2012 |
| 20130248352 | Multiple Frequency Sputtering for Enhancement in Deposition Rate and Growth Kinetics of Dielectric Materials - A method of sputter depositing dielectric thin films may comprise: providing a substrate on a substrate pedestal in a process chamber, the substrate being positioned facing a sputter target; simultaneously applying a first RF frequency from a first power supply and a second RF frequency from a second power supply to the sputter target; and forming a plasma in the process chamber between the substrate and the sputter target, for sputtering the target; wherein the first RF frequency is less than the second RF frequency, the first RF frequency is chosen to control the ion energy of the plasma and the second RF frequency is chosen to control the ion density of the plasma. The self-bias of surfaces within said process chamber may be selected; this is enabled by connecting a blocking capacitor between the substrate pedestal and ground. | 09-26-2013 |
| 20130292244 | REACTIVE SPUTTER DEPOSITION OF DIELECTRIC FILMS - Reactive sputter deposition method and system are disclosed, in which a catalyst gas, such as water vapor, is used to increase the overall deposition rate substantially without compromising formation of a dielectric compound layer and its optical transmission. Addition to the sputtering or reactive gas of the catalyst gas can result in an increase of a deposition rate of the dielectric oxide film substantially without increasing an optical absorption of the film. | 11-07-2013 |
| 20140110248 | CHAMBER PASTING METHOD IN A PVD CHAMBER FOR REACTIVE RE-SPUTTERING DIELECTRIC MATERIAL - According to embodiments provide a method for forming dielectric films using physical vapor deposition chamber. Particularly, a pasting process may be performed to apply a conductive coating over inner surfaces of the physical vapor deposition chamber. The pasting process may be performed under adjusted process parameters, such as increased spacing and/or increased chamber pressure. The adjusted parameters allow the conductive coating to be formed more efficiently and effectively. | 04-24-2014 |
| 20140183037 | RADIO-FREQUENCY SPUTTERING SYSTEM WITH ROTARY TARGET FOR FABRICATING SOLAR CELLS - One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source coupled to at least one end of the rotary target to enable RF sputtering. The length of the rotary target is between 0.5 and 5 meters. | 07-03-2014 |
| 20140360863 | SrRuO3 FILM DEPOSITION METHOD - The present invention provides a SrRuO | 12-11-2014 |
| 20150114827 | METHODS OF FORMING A METAL DIELECTRIC ETCHING STOP LAYER ON A SUBSTRATE WITH HIGH ETCHING SELECTIVITY - Methods for forming a metal dielectric etching stop layer onto a substrate with good etching selectivity and low wet etching rate. In one embodiment, a method of sputter depositing a metal dielectric etching stop layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least N | 04-30-2015 |
| 20150354052 | HIGH-RATE REACTIVE SPUTTERING OF DIELECTRIC STOICHIOMETRIC FILMS - A method of controlling a reactive sputter deposition process includes selecting a control process parameter for a target material and a reactive gas, the target material included in a target acting as a cathode, the reactive sputter deposition process involving forming a compound from a reaction between the target material and reactive gas species associated with the reactive gas in a vacuum chamber; establishing an operation regime for the reactive sputter deposition process for a given target power; and performing, based on the selected control process parameter and the established operation regime, the reactive sputter deposition process in a transition region between a metallic mode and a covered mode through a controlled pulsed reactive gas flow rate into the vacuum chamber, such that a stabilized reactive deposition of the compound on a substrate is achieved, the deposited compound on the substrate comprising a dielectric stoichiometric film. | 12-10-2015 |
| 20160053362 | FILM FORMATION APPARATUS AND FILM FORMATION METHOD - There have been cases where transistors using oxide semiconductors are inferior in reliability to transistors using amorphous silicon. There have also been cases where transistors using oxide semiconductors show great variation in electrical characteristics within one substrate, from substrate to substrate, or from lot to lot. Therefore, an object is to manufacture a semiconductor device using an oxide semiconductor which has high reliability and less variation in electrical characteristics. Provided is a film formation apparatus including a load lock chamber, a transfer chamber connected to the load lock chamber through a gate valve, a substrate heating chamber connected to the transfer chamber through a gate valve, and a film formation chamber having a leakage rate less than or equal to 1×10 | 02-25-2016 |
| 20160068945 | METHOD FOR BEAUTIFYING SURFACE OF REINFORCED GLASS - A method for beautifying a surface of a reinforced glass contains steps of: forming a shielding layer on a non-pattern area of a surface of a body of a reinforced glass in an acid resistant ink printing manner or an ink developing manner; plating a dielectric layer on the surface of the body in a vacuum magnetron sputtering manner; plating a metallic isolation layer; plating a metallic reflecting layer, which is colorful or transparent, on a pattern area; plating the metallic isolation layer; plating a protective layer; removing the shielding layer by ways of detergent to form the pattern area on the metallic reflecting layer on the surface of the body. Thereby, the metallic reflecting layer in the pattern area does not oxidize, discolor, and deteriorate in reinforcing process of the body at high temperature, and the pattern area of the metallic reflecting layer does not fade. | 03-10-2016 |
| 20160141157 | TARGET FOR THE REACTIVE SPUTTER DEPOSITION OF ELECTRICALLY INSULATING LAYERS - A target whose target surface is embodied so that the use of the target for reactive sputter deposition of electrically insulating layers in a coating chamber avoids a production of a spark discharge from the target surface to an anode that is situated in the coating chamber. | 05-19-2016 |
| 20160189940 | RADIO-FREQUENCY SPUTTERING SYSTEM WITH ROTARY TARGET FOR FABRICATING SOLAR CELLS - One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source coupled to at least one end of the rotary target to enable RF sputtering. The length of the rotary target is between 0.5 and 5 meters. | 06-30-2016 |
| 20160251746 | DEPOSITION DEVICE AND DEPOSITION METHOD | 09-01-2016 |
| 204192230 | Silicon containing | 3 |
| 20080245658 | METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS - A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/ interfacial layer at a high temperature (on the order of about 1000° C.), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 Å classical), which cannot be achieved using TaSiN. | 10-09-2008 |
| 20110284366 | Coated article with high visible transmission and low emissivity - A coated article that can be used in applications such as insulating glass (IG) units, so that resulting IG units can achieve high visible transmission of at least 70% (e.g., when using clear glass substrates from 1.0 to 3.5 mm thick), combined with at least one of: (a) SHGC no greater than about 0.45, more preferably no greater than about 0.40; (b) SC no greater than about 0.49, more preferably no greater than about 0.46; (c) chemical and/or mechanical durability; (d) neutral transmissive color such that transmissive a* is from −5.0 to 0 (more preferably from −3.5 to −1.5), and transmissive b* is from −2.0 to 4.0 (more preferably from 1.0 to 3.0); and (e) neutral reflective color from the exterior of the IG unit (i.e., Rg/R | 11-24-2011 |
| 20140216924 | METHOD AND SYSTEM FOR MANUFACTURING A TRANSPARENT BODY FOR USE IN A TOUCH PANEL - A process for manufacturing a transparent body for use in a touch panel is provided. The process includes: The process includes depositing a first transparent layer stack over a substrate with a first silicon-containing dielectric film, a second silicon-containing dielectric film, and a third silicon-containing dielectric film. The first and the third silicon-containing dielectric films have a low refractive index and the second silicon-containing dielectric film has a high refractive index. The process further includes depositing a transparent conductive film in a manner such that the first transparent layer stack and the transparent conductive film are disposed over the substrate in this order. At least one of the first silicon-containing dielectric film, the second silicon-containing dielectric film, the silicon-containing third dielectric film, or the transparent conductive film is deposited by sputtering from a target. Further thereto, a deposition apparatus ( | 08-07-2014 |
