| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 204192210 | Resistor | 8 |
| 20090139855 | MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF MAGNETORESISTANCE ELEMENTS - A manufacturing method of a magnetoresistance element having a pinned magnetic layer, a non-magnetic intermediate layer, and a free magnetic layer, the method includes forming at least one thin film of the non-magnetic intermediate layer and the free magnetic layer at a pressure of 8.0×10 | 06-04-2009 |
| 20100133092 | SPUTTERING METHOD AND SPUTTERING APPARATUS - A sputtering method and a sputtering apparatus are provided in which a target is disposed being inclined relative to a substrate placed on a substrate-placing table so that the condition of d≧D is satisfied, (d is the diameter of the substrate, and D is the diameter of the target), and the total number of rotations R of the substrate-placing table from the beginning of film-deposition on the substrate to the completion thereof becomes ten or more. Also the sputtering method and the sputtering apparatus are provided in which the rotational speed V of the substrate-placing table is controlled so that the total number of rotations R thereof satisfies the formula of | 06-03-2010 |
| 20110089025 | METHOD FOR MANUFACTURING A CHIP RESISTOR HAVING A LOW RESISTANCE - The present invention relates to a method for manufacturing a chip resistor having a low resistance. The method includes the following steps: (a) providing a substrate having a top surface; (b) sputtering a conducting layer directly on the top surface of the substrate, so that the conducting layer and the substrate contact each other, wherein the material of the conducting layer comprises nickel or copper; and (c) plating at least one metal layer directly on the conducting layer, so that the metal layer and the conducting layer contact each other, wherein the material of the metal layer comprises nickel or copper, and the conducting layer and the metal layer provide a resistive layer. As a result, the resistive layer has a precise pattern, and the duration of sputtering is reduced, so the yield rate and the efficiency are improved and the manufacturing cost is cut down. | 04-21-2011 |
| 20110315543 | FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING - Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less. | 12-29-2011 |
| 20120000767 | METHODS AND APPARATUS OF ARC PREVENTION DURING RF SPUTTERING OF A THIN FILM ON A SUBSTRATE - Methods of arc prevention during sputtering of a thin film from a semiconducting target onto a substrate are provided. An alternating current (e.g., having a frequency of about 500 kHz to 15 MHz) can be applied from an electrical power supply to the semiconducting target to form a plasma between the substrate and the semiconducting target. This alternating current can be temporarily interrupted for a time sufficient to sustain the plasma between the substrate and the semiconducting target to inhibit arc formation during sputtering. Sputtering systems are also generally provided for arc prevention during sputtering of a thin film from a semiconducting target onto a substrate. | 01-05-2012 |
| 20120000768 | METHODS FOR SPUTTERING A RESISTIVE TRANSPARENT BUFFER THIN FILM FOR USE IN CADMIUM TELLURIDE BASED PHOTOVOLTAIC DEVICES - Methods for depositing a resistive transparent buffer thin film layer on a substrate are provided. The methods can include cold sputtering a resistive transparent buffer layer on a substrate (e.g., at a sputtering temperature of about 10° C. to about 100° C.) in a sputtering atmosphere comprising about 0.01% to about 5% by volume water vapor (e.g., about 0.05% to about 1% by volume water vapor). The resistive transparent buffer layer can then be annealed at an anneal temperature of about 450° C. to about 700° C. The methods of depositing a resistive transparent buffer thin film layer on a substrate can be used in a method of manufacturing a cadmium thin film photovoltaic device by forming cadmium sulfide layer on the resistive transparent buffer layer, and forming a cadmium telluride layer on the cadmium sulfide layer. | 01-05-2012 |
| 20140097081 | METHODS OF FORMING A THIN FILM RESISTOR - Methods of forming a thin film are disclosed. One such method can include sputtering a target material to form a first thin film resistor and adjusting a parameter of deposition to modulate a property of a subsequently formed second thin film resistor. For instance, a substrate bias and/or a substrate temperature can be adjusted to modulate a property of the second thin film resistor. A temperature coefficient of resistance (TCR) and/or another property of the second thin film resistor can be modulated by adjusting the parameter of deposition. The target material sputtered onto the substrate can include, for example, a Cr alloy, a Ni alloy, SiCr, NiCr, or the like. A relationship can be established between the substrate bias and/or substrate temperature and the thin film resistor property, and the relationship can be used in selecting deposition conditions for a desired property value. | 04-10-2014 |
| 20140102879 | METHOD OF MANUFACTURING VARIABLE RESISTANCE ELEMENT AND APPARATUS FOR MANUFACTURING THE SAME - [Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed. | 04-17-2014 |
