| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 204192180 | Piezoelectric | 9 |
| 20090255804 | PIEZOELECTRIC FILM FORMING METHOD - When forming a piezoelectric film of a Pb containing perovskite-type oxide on a substrate by sputtering, forming the film under a film forming condition in which a film forming temperature Ts(° C.) and a surface potential Vsub of the substrate satisfy Formulae (1) and (2) below respectively. | 10-15-2009 |
| 20100051447 | SOL-GEL PRECURSORS AND METHODS FOR MAKING LEAD-BASED PEROVSKITE FILMS - A simple, economical sol-gel method was invented to produce thick and dense lead zirconate titanate (PZT) thin films that exhibit the stoichiometric chemical composition and unprecedented electrical and dielectric properties. The PZT films are the foundation of many microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) for micro/nano sensors and actuators applications. | 03-04-2010 |
| 20100133091 | THIN FILM PRODUCING METHOD AND HEXAGONAL PIEZOELECTRIC THIN FILM PRODUCED THEREBY - A magnetron circuit of a rectangular type is disposed on a lower surface of a rectangular target. A half of the target is covered with a shield plate, so that sputtering particles sputtered from an erosion region (a region with a maximized magnetic flux density) therebelow is blocked so as not to fly toward a substrate. The substrate is disposed at a level so as to be located in a plasma region of a vacuum chamber, and sputtering particles (ZnO) sputtered from a region exposed from the shield plate in the erosion region is caused to be incident on a surface of the substrate. When a gas pressure is lowered, a mean free path of each of the sputtering particles is lengthened to cause a large amount of high-energy sputtering particles to be incident. As a result, a hexagonal crystal particle having a plane that is a crystal plane hardly damaged by incidence of the high-energy sputtering particles is preferentially grown to form a c-axis in-plane oriented film. | 06-03-2010 |
| 20110180391 | METHOD OF FABRICATING PIEZOELECTRIC MATERIAL WITH SELECTED C-AXIS ORIENTATION - In accordance with a representative embodiment, a method of fabricating a piezoelectric material comprising a first component and a second component comprises: providing a substrate; flowing hydrogen over the substrate; flowing the first component to form the piezoelectric material over a target; and sputtering the piezoelectric material from the target on the substrate. In accordance with another representative embodiment, a method of fabricating a bulk acoustic wave (BAW) resonator comprises: forming a first electrode over a substrate; forming a seed layer over the substrate; and depositing a piezoelectric material having a compression-negative (C | 07-28-2011 |
| 20130220799 | METHOD FOR FORMING DIELECTRIC THIN FILM - A method for forming a dielectric thin film that forms a PZT thin film having a (100)/(001) orientation. After a seed layer is formed by adhering PbO gas to a surface of a substrate, a voltage is applied to a target of lead zirconate titanate (PZT) and perform sputtering, while the substrate is heated inside of an evacuated vacuum chamber. Then, a PZT thin film is formed on the surface of the substrate. Because Pb and O are supplied from the seed layer, a PZT film having a (001)/(100) orientation can be formed without lack of Pb. | 08-29-2013 |
| 20130228454 | Ferroelectric Thin Film, Method for Producing Ferroelectric Thin Film, Method for Producing Piezoelectric Element - In order to obtain a ferroelectric thin film that is formed to have a predetermined thickness on a substrate, that have satisfactory crystallization and that achieves a high piezoelectric property, a method of manufacturing such a ferroelectric thin film and a method of manufacturing a piezoelectric element having such a ferroelectric thin film, when a dielectric material of a perovskite structure is formed into a film on the substrate, a predetermined amount of additive is mixed with PZT, and the concentration of the additive mixed is varied in the thickness direction of the thin film. | 09-05-2013 |
| 20140246305 | METHOD OF FABRICATING RARE-EARTH ELEMENT DOPED PIEZOELECTRIC MATERIAL WITH VARIOUS AMOUNTS OF DOPANTS AND A SELECTED C-AXIS ORIENTATION - A method of fabricating a rare-earth element doped piezoelectric material having a first component, a second component and the rare-earth element. The method includes: providing a substrate; initially flowing hydrogen over the substrate; after the initially flowing of the hydrogen over the substrate, flowing the first component to form the rare-earth element doped piezoelectric material over a surface of a single target, the target comprising the rare-earth metal in a certain atomic percentage; and sputtering the rare-earth element doped piezoelectric material from the target on the substrate. | 09-04-2014 |
| 20150136586 | Method for Producing a Polycrystalline Ceramic Film - The invention relates to a method for producing a polycrystalline ceramic film on a surface ( | 05-21-2015 |
| 20160254439 | PROCESS FOR MAKING LEAD ZIRCONATE TITANATE (PZT) LAYERS AND/OR PLATINUM ELECTRODES AND PRODUCTS THEREOF | 09-01-2016 |
