| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 136238000 |
Chalcogenide containing (S, O, Te, Se)
| 51 |
| 136239000 |
Group IV element containing (C, Si, Ti, Ge, Zr, Sn, Hf, Pb)
| 31 |
| 136240000 |
Group V metal containing (V, As, Nb, Sb, Ta, Bi)
| 10 |
| 136241000 |
Group IB metal containing (Cu, Ag, Au) | 4 |
| 20090007954 | Temperature differential panel - The present invention is related to a temperature differential panel with conductors made of different metals or alloys. With thermoelectric couple effects the panel and device can generate power by temperature difference. The temperature differential panel comprises a sheet-like insulation ( | 01-08-2009 |
| 20090084423 | THERMOELECTRIC MODULE SUBSTRATE AND THERMOELECTRIC MODULE USING SUCH BOARD - To obtain a thermoelectric module substrate of which reliability such as stress relaxation is improved without damaging the performance as a thermoelectric module such as heat conductivity to provide a thermoelectric module excellent in reliability by using such a substrate. Thermoelectric module substrates of the present invention each comprises a synthetic resin layer including fillers having good thermal conductivity; and a copper-metalized layer or layers, or a copper layer at least including copper plate or copper layers which is or are formed on one face or both faces of the synthetic resin layer. Further, in the case where contents volume percentage of fillers within the synthetic resin layer is expressed as A (%), the thickness of the synthetic resin layer is expressed as B (μm) and the total thickness of the copper layer is expressed as C (μm), the thermoelectric module substrate is formed so as to have the relation expressed as (C/4)−B≦65, A/B≦3.5, A>0, C>50 and B≧7. | 04-02-2009 |
| 20090165837 | Thermoelectric Materials and Devices - New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials. | 07-02-2009 |
| 20100108117 | THERMOELECTRIC MODULE PACKAGE AND MANUFACTURING METHOD THEREFOR - A package is adapted to a thermoelectric module in which a plurality of thermoelectric elements is electrically connected in series and aligned between a lower electrode and an upper electrode and is constituted of a metal frame and a metal base which is a metal plate having good thermal conductivity composed of copper, aluminum, silver, or alloy. The metal frame is bonded onto the periphery of the metal base via a low melting point solder whose melting point is lower than that of the solder used for forming the thermoelectric module. The thermoelectric module is circumscribed by the metal frame so that the lower electrode thereof is attached onto the metal base via an insulating resin layer. | 05-06-2010 |
| 136237000 |
Having particular bonding material for junction | 3 |
| 20110100410 | THERMOELECTRIC CONVERTER ELEMENT AND CONDUCTIVE MEMBER FOR THERMOELECTRIC CONVERTER ELEMENT - A low-cost thermoelectric converter element which is not decreased in electrical conductivity and thermal conductivity even under high temperature conditions. The thermoelectric converter element includes a single element including a sintered cell and a pair of electrodes respectively attached to a heating surface that is one surface of the sintered cell and a cooling surface that is a surface opposite to the heating surface, a conductive member for electrical connection with an electrode other than the electrodes, and a metal layer including at least one of gold and platinum. An electrode of the single element is electrically connected with the conductive member through the metal layer. | 05-05-2011 |
| 20120160293 | THERMOELECTRIC CONVERSION MODULE AND PRODUCTION METHOD THEREFOR - A thermoelectric conversion module has a thermoelectric conversion element and an electrode, which are metallurgically bonded together via a porous metal layer. The porous metal layer is made of nickel or silver and has a density ratio of 50 to 90%. | 06-28-2012 |
| 20130152990 | SOLID-LIQUID INTERDIFFUSION BONDING STRUCTURE OF THERMOELECTRIC MODULE AND FABRICATING METHOD THEREOF - A solid-liquid interdiffusion bonding structure of a thermoelectric module and a fabricating method thereof are provided. The method includes coating a silver, nickel, or copper layer on surfaces of a thermoelectric component and an electrode plate, and then coating a tin layer. A thermocompression treatment is performed on the thermoelectric component and the electrode plate, such that the melted tin layer reacts with the silver, nickel, or copper layer to form a silver-tin intermetallic compound, a nickel-tin intermetallic compound, or a copper-tin intermetallic compound. After cooling, the thermoelectric component and the electrode plate are bonded together. | 06-20-2013 |
| Entries |
| Document | Title | Date |
|---|
| 20080289677 | COMPOSITE THERMOELECTRIC MATERIALS AND METHOD OF MANUFACTURE - The present disclosure describes a improved composite thermoelectric and an accompanying method. In accordance with one embodiment of the invention, the thermoelectric is constructed in layers from a perform of a stack of layers, and then treated or otherwise modified in order to create a thinner thermoelectric structure. | 11-27-2008 |
| 20090107537 | Thermocouple Extension Wire - A thermocouple system is disclosed. The thermocouple system includes a thermocouple having a positive lead and a negative lead. A positive wire is connected at a first end to the positive lead at a first junction and at a second end to a second junction. A negative wire is connected at a first end to the negative lead at a third junction and at second end to a fourth junction. The second and fourth junctions constitute a reference junction. At least one of a thermal conductivity and a gauge of at least one of the positive wire and the negative wire are selected to govern the respective flows of heat from the first junction toward the reference junction and the flow of heat from the third junction toward the reference junction to be of such quantities that the difference in the heat flows is less than a predetermined amount. | 04-30-2009 |
| 20090165836 | Thermoelectric conversion material, thermoelectric conversion element using the same, and electronic device and cooling device including the thermoelectric conversion element - A thermoelectric conversion material is provided that has not only a higher thermoelectric performance as compared to conventional ones but also semiconducting temperature dependence, i.e. properties that the electrical resistivity decreases with an increase in temperature. The thermoelectric conversion material contains a substance having a layered bronze structure represented by a formula (Bi | 07-02-2009 |
| 20090235969 | TERNARY THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION - A thermoelectric material and a method of fabricating a thermoelectric material are provided. The thermoelectric material includes a compound having an elemental formula of A | 09-24-2009 |
| 20090293930 | HIGH EFFICIENCY SKUTTERUDITE TYPE THERMOELECTRIC MATERIALS AND DEVICES - One exemplary embodiment includes a materials and devices comprising a multi-element filled skutterudite type body-centered cubic crystal structure including G | 12-03-2009 |
| 20100031993 | THERMOELECTRIC CONVERSION MATERIAL AND THERMOELECTRIC CONVERSION DEVICE - A thermoelectric conversion material is provided with stable thermoelectric conversion properties such as power factor in air at high temperature. The thermoelectric conversion material contains a mixed metal oxide comprising M | 02-11-2010 |
| 20100108115 | BULK THERMOELECTRIC MATERIAL AND THERMOELECTRIC DEVICE COMPRISING THE SAME - A bulk thermoelectric material having a structure in which migration of carriers is not inhibited but phonons are scattered is described. The bulk thermoelectric material includes: a bulk crystalline thermoelectric material matrix; and nanoparticles coated with a conductive material within the thermoelectric material matrix. | 05-06-2010 |
| 20100116308 | THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION MODULE, METHOD FOR PRODUCING THERMOELECTRIC CONVERSION ELEMENT - A thermoelectric conversion element, a thermoelectric conversion module, and a method for producing a thermoelectric conversion element are provided, each of the element and the module having a low contact resistance between a p-type thermoelectric conversion material and an n-type thermoelectric conversion material and being capable of being used at high temperatures without deterioration due to oxidation. A p-type oxide thermoelectric conversion material is primarily made of a substance having a layered perovskite structure represented by the formula: A | 05-13-2010 |
| 20100132755 | Thermoelectric Conversion Material, Method for Producing the Same, Thermoelectric Conversion Device and Method of Improving Strength of Thermoelectric Conversion Material - A thermoelectric conversion material having an excellent thermoelectric conversion property and excellent in mechanical strength, a method for producing the same, and a thermoelectric conversion device using the same are provided. A thermoelectric conversion material includes an oxide for thermoelectric conversion material and an inorganic substance wherein the inorganic substance does not react with the oxide for thermoelectric conversion material under conditions of pressure: 950 hPa to 1050 hPa and temperature: 900° C. A method for producing a thermoelectric conversion material includes the steps (a1) and (a2): (a1) forming a mixture of an oxide for thermoelectric conversion material and an inorganic substance to obtain a green body, (a2) sintering the green body in air at 800° C. to 1700° C. | 06-03-2010 |
| 20100154856 | Substrate for Thermoelectric Conversion Module, and Thermoelectric Conversion Module - A substrate ( | 06-24-2010 |
| 20100163091 | Composite material of complex alloy and generation method thereof, thermoelectric device and thermoelectric module - A composite material of complex alloy is provided and it is the Ceramic-Metal Composite based on a thermoelectric material filled with ceramic material. The composite material is represented by the following general formula (I). | 07-01-2010 |
| 20100206349 | THERMOELECTRIC MATERIAL, AND THERMOELECTRIC ELEMENT AND THERMOELECTRIC MODULE COMPRISING SAME - A thermoelectric material, and a thermoelectric element and a thermoelectric module including the thermoelectric material are disclosed. The thermoelectric material may have improved thermoelectric properties by irradiating the thermoelectric material with accelerated particles such as protons, neutrons, or ion beams. Thus, the thermoelectric material having excellent thermoelectric properties may be efficiently applied to various thermoelectric elements and thermoelectric modules. | 08-19-2010 |
| 20100229910 | ALUMINA PASTE SUBLIMATION SUPPRESSION BARRIER FOR THERMOELECTRIC DEVICE - Alumina as a sublimation suppression barrier for a Zintl thermoelectric material in a thermoelectric power generation device operating at high temperature, e.g. at or above 1000K, is disclosed. The Zintl thermoelectric material may comprise Yb | 09-16-2010 |
| 20100275963 | THERMOELECTRIC MATERIAL INCLUDING A MULTIPLE TRANSITION METAL-DOPED TYPE I CLATHRATE CRYSTAL STRUCTURE - A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A | 11-04-2010 |
| 20100307551 | FABRICATION OF HIGH-TEMPERATURE THERMOELECTRIC COUPLE - The present invention relates to a high-temperature thermoelectric couple and the method for making the same. The method requires a very small number of fabrication steps. It includes an act of fabricating an n-type leg that, in a stacked configuration, includes a low electrical contact resistance metallization foil that is connected to each of the two sides of Lanthanum Telluride via a thin metallic adhesion layer. Additionally, a p-type leg is fabricated that, in a stacked configuration, includes a low electrical contact resistance metallization foil that is connected to each of the two sides of 14-1-11 Zintl. Finally, CTE-matched, low electrical and thermal resistance plate interconnects are used for each of the two legs to interface with the heat source and heat sink and form an electrical connection. | 12-09-2010 |
| 20110061704 | THERMOELECTRIC CONVERSION MODULE AND METHOD FOR PRODUCING THE SAME - A thermoelectric conversion module is formed by bonding a P-type thermoelectric conversion material and an N-type thermoelectric conversion material together with an insulating material including spherical ceramic grains having an index of grain size dispersion, 3CV, of about 20% or less interposed therebetween. The P-type thermoelectric conversion material and the N-type thermoelectric conversion material are electrically connected to each other in a region other than a region in which the P-type thermoelectric conversion material and the N-type thermoelectric conversion material are bonded together with the insulating material interposed therebetween. The spherical ceramic grains have an average grain size of about 0.05 mm to about 0.6 mm, and the insulating material is an insulating glass material. | 03-17-2011 |
| 20110139208 | NANOCOMPOSITE THERMOELECTRIC MATERIAL, AND THERMOELECTRIC DEVICE AND THERMOELECTRIC MODULE INCLUDING THE SAME - A nanocomposite thermoelectric material, a thermoelectric element including the nanocomposite thermoelectric material, and a thermoelectric module including the thermoelectric element are disclosed herein. The nanocomposite thermoelectric material includes highly electrically conductive nano metallic particles that are uniformly dispersed in a thermoelectric material matrix. Thus, the nanocomposite thermoelectric material has high thermoelectric performance, and thus, may be used in a wide range of thermoelectric elements and thermoelectric modules. | 06-16-2011 |
| 20110220165 | THERMOELECTRIC DEVICE INCLUDING THERMOELECTRIC BODY INCLUDING VACANCY CLUSTER - A thermoelectric device includes: a first region; a second region; and a thermoelectric body disposed between the first region and the second region, where the thermoelectric body includes a vacancy. | 09-15-2011 |
| 20110240082 | THERMOELECTRIC MATERIALS BASED ON SINGLE CRYSTAL AlInN-GaN GROWN BY METALORGANIC VAPOR PHASE EPITAXY - The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE). | 10-06-2011 |
| 20110253187 | III-V NITRIDE-BASED THERMOELECTRIC DEVICE - A method to suppress thermal conductivities of nitride films by using stacking faults and/or nano-scale In-composition fluctuation(s). Therefore, the present invention reduces thermal conductivity of nitride while keeping electrical conductivity high. In addition, In composition fluctuations can enhance the Seebeck coefficient through thermionic emission. The present invention further discloses a nitride based (e.g. GaN) thermoelectric lateral device with a short length. | 10-20-2011 |
| 20110284048 | MULTI-LAYER SUPERLATTICE QUANTUM WELL THERMOELECTRIC MATERIAL AND MODULE - A multi-layer superlattice quantum well thermoelectric material comprising at least 10 alternating layers has a layer thickness of each less than 50 nm, the alternating layers being electrically conducting and barrier layers, wherein the layer structure shows no discernible interdiffusion leading to a break-up or dissolution of the layer boundaries upon heat treatment at a temperature in the range from 50 to 150° C. for a time of at least 100 hours and the concentration of doping materials in the conducting layers is 10 | 11-24-2011 |
| 20120160292 | THERMOELECTRIC DEVICE AND MANUFACTURING METHOD THEREOF - A thermoelectric device includes: a substrate; a first nanowire of a first conductive type, which is formed on one side of the substrate; a second nanowire of a second conductive type, which is opposed to the first nanowire; a high temperature part commonly connected to one end of the first nanowire and one end of the second nanowire; low temperature parts connected to the other end of the first nanowire and the other end of the second nanowire, respectively; an insulation layer formed on the first nanowire and the second nanowire; a first metal layer formed on a portion of the insulation layer over the first nanowire, so as to control an electric potential of the first nanowire; and a second metal layer formed on a portion of the insulation layer over the second nanowire, so as to control an electric potential of the second nanowire. | 06-28-2012 |
| 20140076373 | FABRICATION OF NANOWIRE ARRAY COMPOSITES FOR THERMOELECTRIC POWER GENERATORS AND MICROCOOLERS - Methods for fabricating a nanowire array epoxy composite with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of approximately 20% and power density of about 10 | 03-20-2014 |
| 20140318592 | ENHANCEMENT OF THERMOELECTRIC PROPERTIES THROUGH POLARIZATION ENGINEERING - A method for enhancement of thermoelectric properties through polarization engineering. Internal electric fields created within a material are used to spatially confine electrons for the purpose of enhancing thermoelectric properties. Electric fields can be induced within a material by the presence of bound charges at interfaces. A combination of spontaneous and piezoelectric polarization can induce this interfacial charge. The fields created by these bound charges have the effect of confining charge carriers near these interfaces. By confining charge carriers to a channel where scattering centers can be deliberately excluded the electron mobility can be enhanced, thus enhancing thermoelectric power factor. Simultaneously, phonons will not be affected by the fields and thus will be subject to the many scattering centers present in the majority of the structure. This allows for simultaneous enhancement of power factor and reduction of thermal conductivity, thus improving the thermoelectric figure of merit, ZT. This approach is also compatible with other strategies for reducing thermal conductivity, for example the inclusion of nanostructures. | 10-30-2014 |
| 20140352750 | COMPOSITE THERMOELECTRIC MATERIAL, THERMOELECTRIC ELEMENT AND MODULE INCLUDING THE SAME, AND PREPARATION METHOD THEREOF - A composite thermoelectric material comprising a matrix comprising a thermoelectric semiconductor; and a nanoscale heterophase dispersed in the matrix, wherein the thermoelectric semiconductor comprises an element belonging to Group 15 of the Periodic Table of the Elements, and the heterophase comprises a transition metal element. | 12-04-2014 |
| 20160005944 | Method for Preparing Electroconductive Polymer and Thermoelectric Device Comprising Electroconductive Polymer Film Prepared Using the Same - There are provided a method for producing an electroconductive polymer which can be operated at a low temperature such as the human body temperature, is safe to the human body, and is flexible and useful as a thermoelectric material, and a thermoelectric element including a thin film of an electroconductive polymer produced by the production method. | 01-07-2016 |
| 20160099397 | COMPOSITION FOR FORMING THERMOELECTRIC CONVERSION LAYER, THERMOELECTRIC CONVERSION ELEMENT, AND THERMOELECTRIC POWER GENERATING COMPONENT - Provided are a composition for forming a thermoelectric conversion layer, the composition having excellent thermoelectric characteristics; a thermoelectric conversion element, in which the composition is used to form a thermoelectric conversion layer; and a thermoelectric power generating component. The composition for forming a thermoelectric conversion layer includes inorganic particles having an average particle size of 1.0 μm or less; a carrier transport material which satisfies at least one of the condition that the mobility is 0.001 cm | 04-07-2016 |
