| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 136238000 | Chalcogenide containing (S, O, Te, Se) | 51 |
| 20080223426 | THERMOELECTRIC CONVERTER AND METHOD OF MANUFACTURING THERMOELECTRIC CONVERTER - A thermoelectric converter including p-type semiconductors and n-type semiconductors alternately provided in corresponding first and second through holes, respectively, in a ceramic honeycomb. The first and second through holes have different cross-sectional shapes and are alternately arranged. The semiconductors have respective first and second ends thereof successively connected to different ones of the semiconductors on first and second sides, respectively, of the corresponding through holes. | 09-18-2008 |
| 20080223427 | THERMOELECTRIC CONVERTER - A thermoelectric converter including plural thermoelectric conversion modules connected in series by having p-type semiconductors and n-type semiconductors alternately provided in through holes of a ceramic honeycomb, respectively. Ends of the p-type semiconductors are connected to ends of the n-type semiconductors on both sides of the through holes. | 09-18-2008 |
| 20080295879 | Thermoelectric and Pyroelectric Energy Conversion Devices - New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants. | 12-04-2008 |
| 20090205697 | THERMOELECTRIC CONVERSION MATERIAL AND PROCESS FOR PRODUCING THE SAME - The present invention provides a thermoelectric conversion material and a process for producing the thermoelectric conversion materials. The thermoelectric conversion material I comprises a titanium oxide represented by the formula (A) TiO | 08-20-2009 |
| 20100095997 | Stacked thin-film superlattice thermoelectric devices - A thermoelectric device ( | 04-22-2010 |
| 20100170553 | THERMOELECTRIC MATERIALS, THERMOELECTRIC MODULE INCLUDING THERMOELECTRIC MATERIALS, AND THERMOELECTRIC APPARATUS INCLUDING THERMOELECTRIC MODULES - A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: | 07-08-2010 |
| 20100175734 | Thermoelectric nanowire and method of manufacturing the same - A thermoelectric nanowire and a method of manufacturing the same, in which an oxide layer and a thermoelectric material layer, both of which have different thermal expansion coefficients, are stacked on a substrate, and a single crystal thermoelectric nanowire is grown from a thermoelectric material using the compressive stress caused by the difference between the thermal expansion coefficients. The method includes preparing a substrate on which an oxide layer is formed, forming a plurality of nanoparticles, each of which includes aluminum (Al), silver (Ag), iron (Fe) or oxides thereof, on the oxide layer, forming a thermoelectric material thin film, which has thermoelectric properties, above the oxide layer so as to include the nanoparticles formed on the oxide layer, heat-treating the substrate having the thermoelectric material thin film to grow the thermoelectric nanowire containing the nanoparticles, and cooling the substrate at room temperature after the heat-treatment. | 07-15-2010 |
| 20100218796 | THERMOELECTRIC CONVERSION MODULE - Provided is a thermoelectric conversion module. This thermoelectric conversion module comprises a pair of substrates facing each other, a plurality of p-type thermoelectric conversion elements and a plurality of n-type thermoelectric conversion elements arranged between the paired substrates, a plurality of electrodes mounted individually on the paired substrates, connecting individual paired end faces of the p-type thermoelectric conversion elements and the n-type thermoelectric conversion elements electrically with each other, and connecting the p-type thermoelectric conversion elements and the n-type thermoelectric conversion elements electrically in series alternately, and a plurality of bonding members for bonding the p-type thermoelectric conversion elements and the n-type thermoelectric conversion elements individually with the electrodes. The thermal expansion coefficients of the p-type thermoelectric conversion elements and the n-type thermoelectric conversion elements are different from each other and the heights of the p-type thermoelectric conversion elements and the n-type thermoelectric conversion elements are different from each other. | 09-02-2010 |
| 20100252086 | Thermoelectric Element, Thermoelectric Module, and Method for Manufacturing Thermoelectric Element - A thermoelectric element, which has higher thermoelectric properties and shows an enlarged temperature difference between the both ends thereof is provided. A thermoelectric module having such thermoelectric element is also provided. | 10-07-2010 |
| 20100294326 | THERMOELECTRIC CONVERSION MATERIAL AND THERMOELECTRIC CONVERSION MODULE - The present invention realizes a thermoelectric conversion material having excellent thermoelectric performance over a wide temperature range, and a thermoelectric conversion module providing excellent junctions between thermoelectric conversion materials and electrodes. | 11-25-2010 |
| 20110180121 | THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC SEMICONDUCTOR ELEMENT USING THERMOELECTRIC SEMICONDUCTOR MATERIAL, THERMOELECTRIC MODULE USING THERMOELECTRIC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD FOR SAME - A metal mixture is prepared, in which an excess amount of Te is added to a (Bi—Sb) | 07-28-2011 |
| 20110226304 | Thermoelectric Conversion Module - A thermoelectric conversion module that generates electric power by applying a temperature difference to a pn junction between a p-type oxide thermoelectric conversion material and an n-type oxide thermoelectric conversion material, at least one surface of a pair of surfaces to which a temperature difference is to be applied is covered with an insulating film. Surfaces other than the surfaces to which the temperature difference is to be applied are also covered with an insulating film. The p-type oxide thermoelectric conversion material, the n-type oxide thermoelectric conversion material, an insulating material arranged therebetween, and the insulating film that covers a predetermined region of the surface are co-sintered. | 09-22-2011 |
| 20110240083 | THERMOELECTRIC MATERIAL, AND THERMOELECTRIC MODULE AND THERMOELECTRIC DEVICE INCLUDING THE THERMOELECTRIC MATERIAL - A thermoelectric material including a compound represented by Formula 1 below: | 10-06-2011 |
| 20110247671 | THERMOELECTRIC MATERIAL AND METHOD OF PREPARING THE SAME - A thermoelectric material including: a bismuth-tellurium (Bi—Te)-based thermoelectric material matrix; and a nano-metal component distributed in the Bi—Te-based thermoelectric material matrix, wherein a Lotgering degree of orientation in a c-axis direction is about 0.9 to about 1. | 10-13-2011 |
| 20110297202 | NANO STRUCTURE INCLUDING DISCONTINUOUS AREA AND THERMOELECTRIC DEVICE INCLUDING NANO STRUCTURE - A thermoelectric material including: a nanostructure; a discontinuous area disposed in the nanostructure, and an uneven portion disposed on the nano structure. | 12-08-2011 |
| 20120024335 | MULTI-LAYERED THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a multi-layered thermoelectric device and a method of manufacturing the same. The method for manufacturing a multi-layered thermoelectric device includes the steps of: forming a P-type semiconductor and an N-type semiconductor in a sheet type by mixing thermoelectric semiconductor materials at a preset component ratio; cutting the sheets according to a preset specification of the thermoelectric device; stacking sheets which are made by mixing the thermoelectric semiconductor materials at a preset component ratio and are cut into the same size for each of them; and forming a final thermoelectric device by compressing the stacked sheets. By using the method, scattering phenomenon due to a short wavelength of phonon occurs at a boundary of each layer, which results in active scattering of phonon. Therefore, it is possible to expect an effect of improving a thermoelectric figure of merit of a thermoelectric device. | 02-02-2012 |
| 20120055528 | THERMOELECTRIC MATERIALS - A thermoelectric material having a high ZT value is provided. In general, the thermoelectric material is a thin film thermoelectric material that includes a heterostructure formed of IV-VI semiconductor materials, where the heterostructure includes at least one potential barrier layer. In one embodiment, the heterostructure is formed of IV-VI semiconductor materials and includes a first matrix material layer, a potential barrier material layer adjacent to the first matrix material layer and formed of a wide bandgap material, and a second matrix material layer that is adjacent the potential barrier material layer opposite the first matrix material layer. A thickness of the potential barrier layer is approximately equal to a mean free path distance for charge carriers at a desired temperature. | 03-08-2012 |
| 20120103381 | Segmented thermoelectric module with bonded legs - A segmented lead telluride egg-crate thermoelectric module. In preferred embodiments N legs and P legs are segmented into at least two segments. The segments are chosen for their figure of merit in the various temperature ranges between the hot side and the cold side of the module. In preferred embodiments a low-temperature egg-crate, molded from a liquid crystal polymer material, having very low thermal conductivity holds in place and provides insulation and electrical connections for the thermoelectric N legs and P legs at the cold side of the module. A castable ceramic capable of operation at temperatures in excess of 500° C. is used to provide electrical insulation between the legs at the hot side of the module. | 05-03-2012 |
| 20120180842 | THERMOELECTRIC DEVICE, ELECTRODE MATERIALS AND METHOD FOR FABRICATING THEREOF - A thermoelectric device, a method for fabricating a thermoelectric device and electrode materials applied to the thermoelectric device are provided according to the present invention. The present invention is characterized in arranging thermoelectric material power, interlayer materials and electrode materials in advance according to the structure of thermoelectric device; adopting one-step sintering method to make a process of forming bulked thermoelectric materials and a process of combining with electrodes on the devices to be completed simultaneously; and obtaining a π shape thermoelectric device finally. Electrode materials related to the present invention comprise binary or ternary alloys or composite materials, which comprise at least a first metal selected from Cu, Ag, Al or Au, and a second metal selected from Mo, W, Zr, Ta, Cr, Nb, V or Ti. The present invention simplifies fabricating procedures, reduces the cost and avoids adverse impacts due to exposing related elements to heat and pressure for a second time. | 07-19-2012 |
| 20120211045 | THERMOELECTRIC CONVERSION MATERIAL AND ITS MANUFACTURING METHOD, AND THERMOELECTRIC CONVERSION DEVICE USING THE SAME - Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi | 08-23-2012 |
| 20120216848 | THIN-FILM HETEROSTRUCTURE THERMOELECTRICS IN A GROUP IIA AND IV-VI MATERIALS SYSTEM - Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure. | 08-30-2012 |
| 20130019918 | THERMOELECTRIC DEVICES, SYSTEMS AND METHODS - A method for forming a thermoelectric element for use in a thermoelectric device comprises forming a mask adjacent to a substrate. The mask can include three-dimensional structures phase-separated in a polymer matrix. The three-dimensional structures can be removed to provide a plurality of holes in the polymer matrix. The plurality of holes can expose portions of the substrate. A layer of a metallic material can be deposited adjacent to the mask and exposed portions of the substrate. The mask can then be removed. The metallic material is then exposed to an oxidizing agent and an etchant to form holes or wires in the substrate. | 01-24-2013 |
| 20130032190 | THERMOELECTRIC NANOCOMPOSITE, THERMOELECTRIC ELEMENT, AND THERMOELECTRIC MODULE - A thermoelectric material including a thermoelectric semiconductor; and a nanosheet disposed in the thermoelectric semiconductor, the nanosheet having a layered structure and a thickness from about 0.1 to about 10 nanometers. Also a thermoelectric element and thermoelectric module including the thermoelectric material. | 02-07-2013 |
| 20130068274 | METHOD FOR PRODUCING A THERMOELECTRIC COMPONENT AND THERMOELECTRIC COMPONENT - A method for manufacturing a thermoelectric component is provided. The method comprises the following steps: producing a plurality of first layers of a first thermoelectric material, and producing a plurality of second layers of a second thermoelectric material, such that the first layers are arranged in alternation with the second layers. Producing the first and/or the second thermoelectric layers each comprises producing at least one first initial layer and at least one second initial layer. | 03-21-2013 |
| 20130186449 | RARE EARTH-DOPED MATERIALS WITH ENHANCED THERMOELECTRIC FIGURE OF MERIT - A thermoelectric material and a thermoelectric converter using this material. The thermoelectric material has a first component including a semiconductor material and a second component including a rare earth material included in the first component to thereby increase a figure of merit of a composite of the semiconductor material and the rare earth material relative to a figure of merit of the semiconductor material. The thermoelectric converter has a p-type thermoelectric material and a n-type thermoelectric material. At least one of the p-type thermoelectric material and the n-type thermoelectric material includes a rare earth material in at least one of the p-type thermoelectric material or the n-type thermoelectric material. | 07-25-2013 |
| 20130247951 | THERMOELECTRIC MATERIAL WITH HIGH CROSS-PLANE ELECTRICAL CONDUCTIVITY IN THE PRESENCE OF A POTENTIAL BARRIER - Embodiments of a thermoelectric material having high cross-plane electrical conductivity in the presence of one or more Seebeck coefficient enhancing potential barriers and methods of fabrication thereof are disclosed. In one embodiment, a thermoelectric material includes a first matrix material layer, a barrier layer, and a second matrix material layer. The barrier layer is a short-period superlattice structure that includes multiple superlattice layers. Each superlattice layer has a high energy sub-band and a low energy sub-band. For each superlattice layer, the energy level of the high energy sub-band of the superlattice layer is resonant with the energy level of the low energy level sub-band of an adjacent superlattice layer and/or the energy level of the low energy sub-band of the superlattice layer is resonant with the energy level of the high energy sub-band of an adjacent superlattice layer. As a result, cross-plane electrical conductivity of the thermoelectric material is improved. | 09-26-2013 |
| 20130247952 | THERMOELECTRIC CONVERSION STRUCTURE AND METHOD OF MANUFACTURING SAME - A thermoelectric conversion material in a wire structure or quasi-one-dimensional structure is fabricated simply and with good reproducibility. In one mode of the present invention, a thermoelectric conversion structure | 09-26-2013 |
| 20130255743 | THERMOELECTRIC CONVERSION STRUCTURE AND METHOD OF MANUFACTURING SAME - A thermoelectric conversion material in which the electron spatial distribution assumes a wire structure or a quasi-one-dimensional structure is fabricated. A mode of the present invention provides a thermoelectric conversion structure 100 of a single crystal 10 of SrTiO | 10-03-2013 |
| 20130263907 | THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION DEVICE, AND THERMOELECTRIC CONVERSION MODULE - Provided is a p-type thermoelectric conversion material achieving a low environment load and low costs and having high efficiency. A thermoelectric conversion device is constituted by raw materials existing in a great amount in nature by using Fe and S as main components. Further, since FeS | 10-10-2013 |
| 20130298957 | Electrically Conductive Nanocomposite Material and Thermoelectric Device Comprising the Material - An electrically conductive composite material that includes an electrically conductive polymer, and at least one metal nanoparticle coated with a protective agent, wherein said protective agent includes a compound having a first part that has at least part of the molecular backbone of said electrically conductive polymer and a second part that interacts with said at least one metal nanoparticle. | 11-14-2013 |
| 20130319495 | THERMOELECTRIC DEVICE AND THERMOELECTRIC MODULE HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a thermoelectric device using a bulk material of a nano type, a thermoelectric module having the thermoelectric device and a method of manufacturing thereof. According to the present invention, thin film of a nano thickness is formed on a bulk material formed as several nano types to be re-connected for prohibiting the phonon course. | 12-05-2013 |
| 20140000671 | THERMOELECTRIC CONVERSION MATERIAL AND ITS MANUFACTURING METHOD, AND THERMOELECTRIC CONVERSION DEVICE USING THE SAME | 01-02-2014 |
| 20140060607 | FLEXIBLE POLYMER-BASED THERMOELECTRIC MATERIALS AND FABRICS INCORPORATING THE SAME - Thermoelectric materials and flexible polymer-based thermoelectric materials that may be applied to fabrics for use as personal cooling/heating clothes and portable power source. | 03-06-2014 |
| 20140166065 | STRUCTURE OF THERMOELECTRIC FILM - A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity. | 06-19-2014 |
| 20140190544 | THERMOELECTRIC CONVERSION MATERIAL AND PRODUCING METHOD THEREOF, AND THERMOELECTRIC CONVERSION ELEMENT USING THE SAME - Compound semiconductors, expressed by the following formula: Bi | 07-10-2014 |
| 20140261609 | ULTRATHIN NANOWIRE-BASED AND NANOSCALE HETEROSTRUCTURE BASED THERMOELECTRONIC CONVERSION STRUCTURES AND METHOD OF MAKING THE SAME - A nano scale hetero structure tellurium-based nanowire structure is disclosed including a dumbbell-like crystalline heterostructure having a center rod-like portion and one octahedral structure connected to each end of each of the center rod-like portions, wherein the center rod-like portion is a bismuth-telluride nanowire structure and the octahedral structures are lead telluride. | 09-18-2014 |
| 20140299172 | Thermoelectric Material, Method for Producing the Same, and Thermoelectric Conversion Module Using the Same - A thermoelectric material includes a semiconductor substrate, a semiconductor oxide film formed on the substrate, and a thermoelectric layer provided on the oxide film. The semiconductor oxide film has a first nano-opening formed therein. The thermoelectric layer has such a configuration that semiconductor nanodots are piled up on or above the first nano-opening so as to form a particle packed structure. At least some of the nanodots each have a second nano-opening formed in its surface, and are connected to each other through the second nano-opening with their crystal orientation aligned. The thermoelectric material is produced through steps of oxidizing the substrate to form the semiconductor oxide film thereon, forming the first nano-opening in the oxide film, and epitaxially growing to pile up the plurality of nanodots on the first nano-opening. | 10-09-2014 |
| 20140305484 | THERMOELECTRIC CONVERSION MATERIAL - Provided is a thermoelectric conversion material which is composed of Bi | 10-16-2014 |
| 20140318593 | NANOPARTICLE COMPACT MATERIALS FOR THERMOELECTRIC APPLICATION - A thermoelectric composite and a thermoelectric device and a method of making the thermoelectric composite. The thermoelectric composite is a semiconductor material formed from mechanically-alloyed powders of elemental constituents of the semiconductor material to produce nano-particles of the semiconductor material, and compacted to have at least a bifurcated grain structure. The bifurcated grain structure has at least two different grain sizes including small size grains in a range of 2-200 nm and large size grains in a range of 0.5 to 5 microns. The semiconductor material has a figure of merit ZT, defined as a ratio of the product of square of Seebeck coefficient, S | 10-30-2014 |
| 20150013741 | THERMOELECTRIC CONVERSION MATERIAL - The present invention provides a thermoelectric conversion material of which the structure is controlled to have nano-order microscopic pores and which has a low thermal conductivity and has an improved thermoelectric performance index. In the thermoelectric conversion material having a thermoelectric semiconductor layer formed on a block copolymer substrate that comprises a block copolymer having microscopic pores, wherein the block copolymer comprises a polymer unit (A) formed of a monomer capable of forming a homopolymer having a glass transition temperature of 50° C. or higher, and a polymer unit (B) formed of a conjugated dienic polymer. | 01-15-2015 |
| 20150020862 | Oxide Nanoparticle-Dispersed, Chalcogenide-Based, and Phase-Separated Composite Thermoelectric Material - Provided is a thermoelectric material containing: a matrix containing a Group 13 element of chalcogenide; and oxide nanoparticles dispersed into the matrix to have excellent thermal stability, wherein the oxide nanoparticle forms a coherent interphase interface with the Group 13 element of the chalcogenide-based matrix and is elongated in a specific direction, such that thermal conductivity may be effectively decreased with a trace amount of the oxide nanoparticle to minimize deterioration of electric conductivity. | 01-22-2015 |
| 20150107640 | IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX - A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved. | 04-23-2015 |
| 20150380625 | Thermoelectric Materials and Devices Comprising Graphene - Composite materials with thermoelectric properties and devices made from such materials are described. The thermoelectric composite material may comprise a metal oxide material and graphene or modified graphene. It has been found that the addition of graphene or modified graphene to thermoelectric metal oxide materials increases ZT. It has further been found that the ZT of the metal oxide becomes effective over a broader temperature range and at lower temperatures. | 12-31-2015 |
| 20160079509 | System and Method for Nanowire-Array Transverse Thermoelectrics - A transverse thermoelectric includes a first array of hole-conducting nanowires and a second array of electron-conducting nanowires positioned orthogonal to the first array of nanowires. A substrate provides structure to the first array of nanowires and the second array of nanowires. | 03-17-2016 |
| 20160126439 | P-TYPE HIGH-PERFORMANCE THERMOELECTRIC MATERIAL WITH REVERSIBLE PHASE CHANGE AND PREPARATION METHOD THEREFOR - The present invention relates to a P-type high-performance thermoelectric material featuring reversible phase change, and a preparation method therefor. The thermoelectric material has a chemical composition of Cu | 05-05-2016 |
| 20160141479 | THERMOELECTRIC POWER MODULE - A thermoelectric power module capable of suppressing increase of heat-leakage between a heat exchanger at a higher temperature part and another heat exchanger at a lower temperature part while effectively preventing oxidation of a thermoelectric element, an electrode, and a joint layer for joining the thermoelectric element to the electrode, and preventing a short circuit due to extraneous materials, dew condensation, and so on. The thermoelectric power module includes: a thermoelectric element employing a bismuss-tellurium (Bi—Te) based thermoelectric material; at least one barrier layer disposed on the thermoelectric element; an electrode; an electrode protection layer disposed at least on one principal surface of the electrode; a solder layer having a side surface formed with a recess, the solder layer joining a first region of the electrode protection layer to the at least one barrier layer; and a coating film disposed on a side surface of the thermoelectric element, a side surface of the at least one barrier layer, and the side surface of the solder layer, the coating film covering a second region adjacent to the first region of the electrode protection layer and being filled into the recess of the solder layer. | 05-19-2016 |
| 20160141481 | THERMOELECTRIC MATERIALS BASED ON TETRAHEDRITE STRUCTURE FOR THERMOELECTRIC DEVICES - Thermoelectric materials based on tetrahedrite structures for thermoelectric devices and methods for producing thermoelectric materials and devices are disclosed. The thermoelectric device has a pair of conductors and a p-type thermoelectric material disposed between the conductors. The thermoelectric material is at least partially formed of a hot pressed high energy milled tetrahedrite formed of tetrahedrite ore and pure elements to form a tetrahedrite powder of Cu12-xMxSb4S13 disposed between the conductors, where M is at least one of Zn and Fe. | 05-19-2016 |
| 20160172569 | THERMOELECTRIC POWER MODULE | 06-16-2016 |
| 20160172570 | DISPENSER PRINTED MECHANICALLY-ALLOYED P-TYPE FLEXIBLE THERMOELECTRIC GENERATORS | 06-16-2016 |
| 20160190420 | ELECTRICAL AND THERMAL CONTACTS FOR BULK TETRAHEDRITE MATERIAL, AND METHODS OF MAKING THE SAME - Under one aspect, a structure includes a tetrahedrite substrate; a first contact metal layer disposed over and in direct contact with the tetrahedrite substrate; and a second contact metal layer disposed over the first contact metal layer. A thermoelectric device can include such a structure. Under another aspect, a method includes providing a tetrahedrite substrate; disposing a first contact metal layer over and in direct contact with the tetrahedrite substrate; and disposing a second contact metal layer over the first contact metal layer. A method of making a thermoelectric device can include such a method. | 06-30-2016 |
| 20160204325 | Thermoelectric Element, Thermoelectric Module Comprising Same, and Heat Conversion Apparatus | 07-14-2016 |
