| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 136240000 | Group V metal containing (V, As, Nb, Sb, Ta, Bi) | 10 |
| 20090211619 | Thermoelectric Material and Device Incorporating Same - A thermoelectric device includes a plurality of thermoelectric elements coupled between a first plate and a second plate. The plurality of thermoelectric elements are electrically interconnected with one another by a plurality of electrical interconnects and the plurality of thermoelectric elements include at least one thermoelectric element comprising a material having the formula A | 08-27-2009 |
| 20100051081 | THERMOELECTRIC CONVERSION MATERIAL, METHOD FOR MANUFACTURING THE SAME, AND THERMOELECTRIC CONVERSION ELEMENT - A thermoelectric conversion material is provided which stably exhibits high thermoelectric conversion performance at about 300 to 600° C. and has high physical strength, resistance to weathering, durability, stability, and reliability. A method for manufacturing the same, and a thermoelectric conversion element are also provided. Also provided is a thermoelectric conversion material produced using, as a raw material, silicon sludge which has had to be disposed of in landfill. The thermoelectric conversion material of the invention is characterized by containing, as a main component, a sintered body composed of polycrystalline magnesium silicide containing at least one element selected from As, Sb, P, Al, and B. The manufacturing method uses purified and refined silicon sludge. | 03-04-2010 |
| 20100071741 | THERMOELECTRIC MATERIAL INCLUDING A FILLED SKUTTERUDITE CRYSTAL STRUCTURE - A thermoelectric material includes a filled skutterudite crystal structure having the formula G | 03-25-2010 |
| 20100175735 | THERMOELECTRIC MATERIAL, METHOD FOR PRODUCING THE SAME, AND THERMOELECTRIC CONVERTER - The present invention provides a thermoelectric material useful for a thermoelectric converter having excellent energy conversion efficiency, and a method for producing the thermoelectric material. The thermoelectric material comprising an oxide containing Ti, M, and O and the oxide is represented by Formula (1). | 07-15-2010 |
| 20100252087 | THERMOELECTRIC DEVICES INCLUDING THERMOELECTRIC ELEMENTS HAVING OFF-SET METAL PADS AND RELATED STRUCTURES, METHODS, AND SYSTEMS - A thermoelectric device may include a thermoelectric element including a layer of a thermoelectric material and having opposing first and second surfaces. A first metal pad may be provided on the first surface of the thermoelectric element, and a second metal pad may be provided on the second surface of the thermoelectric element. In addition, the first and second metal pads may be off-set in a direction parallel with respect to the first and second surfaces of the thermoelectric element. Related methods are also discussed. | 10-07-2010 |
| 20110220166 | METHOD OF SYNTHESIS COBALT ANTIMONIDE NANOSCALE STRUCTURES AND DEVICE - This invention pertains generally to compositions and a method for making films, nanostructures and nanowires in templates and on substrates, including but not limited to metal-semiconductor nanostructures and semiconductor nanostructures on semiconductor substrates, and a device having the same. Particularly described are methods for making cobalt antimonide nanostructures on gold and Co—Sb substrates. | 09-15-2011 |
| 20110284049 | THERMOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - In order to achieve a thermoelectric transducer exhibiting a higher conversion efficiency and an electronic apparatus including such a thermoelectric transducer, a thermoelectric conversion device is provided, including a semiconductor stacked structure including semiconductor layers stacked with each other, the semiconductor layers being made from different semiconductor materials, in which a material and a composition of each semiconductor layer in the semiconductor stacked structure are selected so as to avoid conduction-band or valence-band discontinuity. | 11-24-2011 |
| 20120006376 | ELECTRICAL CONTACTS FOR SKUTTERUDITE THERMOELECTRIC MATERIALS - A thermally stable diffusion barrier for bonding skutterudite-based materials with metal contacts is disclosed. The diffusion barrier may be employed to inhibit solid-state diffusion between the metal contacts, e.g. titanium (Ti), nickel (Ni), copper (Cu), palladium (Pd) or other suitable metal electrical contacts, and a skutterudite thermoelectric material including a diffusible element, such as antimony (Sb), phosphorous (P) or arsenic (As), e.g. n-type CoSb | 01-12-2012 |
| 20130247953 | ELECTRODE MATERIALS AND CONFIGURATIONS FOR THERMOELECTRIC DEVICES - Thermoelectric devices and associated materials and assembly methods are generally described. Certain aspects relate to electrode materials and electrode configurations for use in thermoelectric devices. In some embodiments, the inventive thermoelectric devices comprise electrodes comprising silicon, such as silicides of cobalt, iron, and/or nickel. Such electrode materials can be useful for making electrical contact with a wide variety of thermoelectric materials, including skutterudite materials. The thermoelectric devices described herein can be used to convert applied voltages to thermal gradients and or to convert thermal gradients to electricity. | 09-26-2013 |
| 20150122303 | THERMOELECTRIC CONVERSION MATERIAL USING SUBSTRATE HAVING NANOSTRUCTURE, AND METHOD FOR PRODUCING SAME - The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer. | 05-07-2015 |
