Barrier layer device making

Subclass of:

029 - Metal working

029250010 - BARRIER LAYER OR SEMICONDUCTOR DEVICE MAKING

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application number	Description	Number of patent applications / Date published
029250030	Electrolytic device making (e.g., capacitor)	91

Entries
Document	Title	Date
20090293247	METAL-INSULATOR-METAL CAPACITOR STRUCTURE - A metal-insulator-metal capacitor structure includes a lower electrode, a buffer layer, a barrier layer, a dielectric layer and an upper electrode. The lower electrode is disposed in the buffer layer. The barrier layer covers part of the lower electrode and is disposed between the lower electrode and the upper electrode. The buffer layer serves as an etching stop layer to define the dielectric layer. The dielectric layer in the metal-insulator-metal capacitor structure has a uniform and ideal thickness.	12-03-2009
20120210549	METHODS OF MANUFACTURING ELECTRIC DOUBLE LAYER CAPACITOR CELL AND ELECTRIC DOUBLE LAYER CAPACITOR - A method of manufacturing the electric double layer capacitor cell includes preparing first and second electrode sheets by printing electrode material onto conductive sheets, respectively, with the exception of regions to be provided as first and second terminal lead-out portions in the conductive sheets; punching the first and second electrode sheets so as to form a plurality of first and second unit electrodes, respectively, each first unit electrode having the first terminal lead-out portion and each second unit electrode having the second terminal lead-out portion; stacking the first and second electrode sheets with a separator interposed therebetween in order that the plurality of first and second unit electrodes are overlapped; and cutting the first and second electrode sheets being stacked into the first and second unit electrodes.	08-23-2012