Entries |
Document | Title | Date |
20080268656 | METHOD OF FORMING OXIDE-BASED NANO-STRUCTURED MATERIAL - Provided is a method of forming an oxide-based nano-structured material including growing a nano-structured material using a nano-nucleus having the same composition as the desired oxide-based nano-structured material. A solution is coated on a substrate, the solution including: an organic precursor containing M which is a transition metal or a semi metal; and an organic solvent in which the organic precursor is dissolved. A nano-nucleus having a composition of MxOy is formed on the substrate by annealing the substrate. A nano-structured material having a composition of MxOy is formed by growing the nano-nucleus while supplying a reaction precursor containing M into the nano-nucleus, and the nano-structured material is annealed. | 10-30-2008 |
20080280457 | METHOD OF IMPROVING INITIATION LAYER FOR LOW-K DIELECTRIC FILM BY DIGITAL LIQUID FLOW METER - A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer. | 11-13-2008 |
20080318440 | POROUS ORGANOSILICATE LAYERS, AND VAPOR DEPOSITION SYSTEMS AND METHODS FOR PREPARING SAME - The present invention provides porous organosilicate layers, and vapor deposition systems and methods for preparing such layers on substrates. The porous organosilicate layers are useful, for example, as masks. | 12-25-2008 |
20090017639 | NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS OF K<2.2 WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—C | 01-15-2009 |
20090068852 | METHOD OF FORMING A CARBON POLYMER FILM USING PLASMA CVD - A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C | 03-12-2009 |
20090075488 | BETA-DIKETIMINATE LIGAND SOURCES AND METAL-CONTAINING COMPOUNDS THEREOF, AND SYSTEMS AND METHODS INCLUDING SAME - The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one fluorine-containing organic group as substituent. In other certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the β-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided. | 03-19-2009 |
20090093132 | METHODS TO OBTAIN LOW K DIELECTRIC BARRIER WITH SUPERIOR ETCH RESISTIVITY - The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film. | 04-09-2009 |
20090111283 | METHOD FOR FORMING INTERLAYER INSULATING FILM OF SEMICONDUCTOR DEVICE - A method for forming an interlayer insulating film of a semiconductor device comprises forming an active pattern over a substrate, forming a spin-on dielectric film over the substrate including the active pattern, and irradiating an electron beam over the spin on dielectric film to form an interlayer insulating film. | 04-30-2009 |
20090170342 | DIELECTRIC NANOSTRUCTURE AND METHOD FOR ITS MANUFACTURE - The present invention relates to dielectric nanostructures useful in semiconductor devices and other electronic devices and methods for manufacturing the dielectric nanostructures. The nanostructures generally comprises an array of isolated pillars positioned on a substrate. The methods of the present invention involve using semiconductor technology to manufacture the nanostructures from a mixture of a crosslinkable dielectric material and an amphiphilic block copolymer. | 07-02-2009 |
20090186490 | ORGANIC SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, AND THEIR MANUFACTURING METHODS - An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent. | 07-23-2009 |
20090203224 | Si Device Making Method By Using A Novel Material For Packing and Unpacking Process - A method of lithography patterning includes forming a resist pattern on a substrate, the resist pattern including at least one desired opening and at least one padding opening therein on the substrate; forming a patterned photosensitive material layer on the resist pattern and the substrate, wherein the patterned photosensitive material layer covers the padding opening of the resist pattern; and applying a resolution enhancement lithography by assist of chemical shrink (RELACS) process to the desired opening of the resist pattern. | 08-13-2009 |
20090203225 | SiCOH FILM PREPARATION USING PRECURSORS WITH BUILT-IN POROGEN FUNCTIONALITY - A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant. | 08-13-2009 |
20090239390 | METHODS FOR PRODUCING LOW STRESS POROUS AND CDO LOW-K DIELECTRIC MATERIALS USING PRECURSORS WITH ORGANIC FUNCTIONAL GROUPS - Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon-carbon triple bond, or carbon-carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7. Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications. | 09-24-2009 |
20090269942 | Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound - A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO | 10-29-2009 |
20090298298 | METHOD OF FORMING INTERLAYER INSULATING FILM, PRECURSOR SOLUTION FOR FORMING OF INTERLAYER INSULATING FILM, CVD MATERIAL FOR FORMING OF INTERLAYER INSULATING FILM AND RAW MATERIAL FOR PRODUCTION OF SILOXANE OLIGOMER - In a method of forming an interlayer insulating film by plasma CVD, an organic siloxane compound including one or more silicon atoms each having at least three or more units each represented by a general formula, —O—Si(R | 12-03-2009 |
20090305516 | METHOD FOR PURIFYING ACETYLENE GAS FOR USE IN SEMICONDUCTOR PROCESSES - Acetylene is treated to remove some residual storage solvent that may be present with the acetylene in a source of acetylene such as a container. Such treatment may be performed prior to supplying the acetylene to a deposition chamber or other reactor where acetylene is a reactant. After treatment, the acetylene gas stream has a relatively constant concentration of storage solvent, regardless of how much acetylene has been released from the acetylene source. The treatment may involve condensing the storage solvent from the gas stream at a certain temperature and separating the storage solvent from the gas stream. | 12-10-2009 |
20100048031 | SOFT MOLD, METHOD OF MANUFACTURING THE SAME, AND PATTERNING METHOD USING THE SAME - The patterning method includes forming a synthetic resin layer on a substrate, providing a mold in which a predetermined pattern is formed and metal particles are distributed on the surface of the mold, contacting the mold having the predetermined pattern with the synthetic resin layer, transferring the pattern of the mold onto the synthetic resin layer to form a patterned synthetic resin layer, and forming an organic layer on the patterned synthetic resin layer. | 02-25-2010 |
20100093187 | Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD) - Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate. | 04-15-2010 |
20100124826 | Methods Of Utilizing Block Copolymer To Form Patterns - Some embodiments include methods of utilizing block copolymer to form patterns between weirs. The methods may utilize liners along surfaces of the weirs to compensate for partial-width segments of the patterns in regions adjacent the weirs. Some embodiments include methods in which spaced apart structures are formed over a substrate, and outer surfaces of the structures are coated with a thickness of coating. Diblock copolymer is used to form a pattern across spaces between the structures. The diblock copolymer includes a pair of block constituents that have different affinities for the coating relative to one another. The pattern includes alternating segments, with the segments adjacent to the coating being shorter than the segments that are not adjacent to the coating. The coating thickness is about the amount by which the segments adjacent to the coating are shorter than the segments that are not adjacent to the coating. | 05-20-2010 |
20100130025 | METHOD FOR FORMING A DIELECTRIC FILM AND NOVEL PRECURSORS FOR IMPLEMENTING SAID METHOD - The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—Cn-Si chain where n=l. | 05-27-2010 |
20100136798 | Silane monomers and siloxane polymers for semiconductor optoelectronics - A method for producing a polymer for semiconductor optoelectronics, comprising the steps of providing a monomer is produced having the formula: | 06-03-2010 |
20100167553 | Organosilane polymer with improved gap-filling property for semiconductor device and coating composition using the same - A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4: | 07-01-2010 |
20110008971 | PROCESSES FOR THE PRODUCTION OF ORGANOMETALLIC COMPOUNDS - This invention relates to processes for the production of organometallic compounds represented by the formula M(L) | 01-13-2011 |
20110076858 | Methods for Coating the Backside of Semiconductor Wafers - The invention provides methods for depositing a coating onto the entire backside of a semiconductor wafer. The methods of the invention address the deficiencies typically associated with deposition of coatings onto the backside of semiconductor wafers. Since the methods of the invention result in wafers wherein a coating has been dispensed all the way to the edge of the wafer, there is minimal chip flying during dicing, and minimal wafer breakage and chip breakage. In addition, the methods of the invention result in a marked decrease in waste when compared to traditional spin coating methods. | 03-31-2011 |
20110244695 | UV-CURABLE INORGANIC-ORGANIC HYBRID RESIN AND METHOD FOR PREPARATION THEREOF - The present invention relates to a method for preparation of an ultraviolet (UV)-curable inorganic-organic hybrid resin containing about or less than 4% volatiles and less than 30% organic residues. The UV-curable inorganic-organic hybrid resin obtained according to this method can be UV-cured within a markedly very short time and enables, upon curing, the formation of a transparent shrink- and crack-free glass-like product having high optical quality, high thermal stability and good bonding properties. In view of these properties, this hybrid resin can be used in various applications such as electro-optic, microelectronic, stereolithography and biophotonic applications. | 10-06-2011 |
20110281441 | Process of Localized Electrografting onto Photosensitive Semiconductor Substrates - The present invention relates to a process for preparing an organic film on a selected zone at the surface of a photosensitive semiconductor substrate, characterized in that it comprises the following steps: (i) bringing a liquid solution comprising at least one organic adhesion primer into contact with at least said selected zone; (ii) polarization of the surface of said substrate to an electric potential more cathodic than the reduction potential of the adhesion primer used in step (i); and (iii) exposure of said selected zone to light radiation, the energy of which is at least equal to that of the band gap of said semiconductor. | 11-17-2011 |
20120015527 | Method of Fine Patterning Semiconductor Device - For patterning during integrated circuit fabrication, an image layer is activated for forming a respective first type polymer block at each of two nearest activated areas. A layer of block copolymer is formed on the image layer, and a plurality of the first type polymer blocks and a plurality of second and third types of polymer blocks are formed on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer. At least one of the first, second, and third types of polymer blocks are removed to form a variety of mask structures. | 01-19-2012 |
20120028476 | METHOD OF FORMING SEMICONDUCTOR STRUCTURES WITH CONTACT HOLES - Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings. | 02-02-2012 |
20120129357 | TWO-DIMENSIONAL PATTERNING EMPLOYING SELF-ASSEMBLED MATERIAL - A first nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running along a first direction is formed from first self-assembling block copolymers within a first layer. The first layer is filled with a filler material and a second layer is deposited above the first layer containing the first nanoscale nested line structure. A second nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running in a second direction is formed from second self-assembling block copolymers within the second layer. The composite pattern of the first nanoscale nested line structure and the second nanoscale nested line structure is transferred into an underlayer beneath the first layer to form an array of structures containing periodicity in two directions. | 05-24-2012 |
20120156892 | SOLUTION AND PROCESS FOR ACTIVATING THE SURFACE OF A SEMICONDUCTOR SUBSTRATE - The present invention relates to a solution and a process for activating the surface of a substrate comprising at least one area formed from a polymer, for the purpose of subsequently covering it with a metallic layer deposited via an electroless process. | 06-21-2012 |
20120190212 | LOW DIELECTRIC CONSTANT INSULATING FILM AND METHOD FOR FORMING THE SAME - Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH | 07-26-2012 |
20120208374 | AMORPHOUS CARBON DEPOSITION METHOD FOR IMPROVED STACK DEFECTIVITY - Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater. | 08-16-2012 |
20120238109 | METHOD OF FORMING PATTERN - According to one embodiment, a method of forming a pattern includes forming a monolayer on a substrate, selectively exposing the monolayer to an energy beam and selectively modifying exposed portions thereof to form patterns of exposed and unexposed portions, forming a block copolymer layer includes first and second block chains on the monolayer, and causing the block copolymer layer to be phase-separated to form patterns of the first and second block chains of the block copolymer layer based on the patterns of the exposed and unexposed portions of the monolayer. | 09-20-2012 |
20120315769 | Methods of Utilizing Block Copolymers to Form Patterns - Some embodiments include methods of forming patterns utilizing copolymer. A copolymer composition is formed across a substrate. The composition includes subunits A and B, and will be self-assembled to form core structures spaced center-to-center by a distance of L | 12-13-2012 |
20130072029 | SURFACE TREATING METHOD AND FILM DEPOSITING METHOD - A surface treating method for treating a surface of a substrate inside a process chamber includes the steps of generating an atmosphere containing no moisture in the process chamber, heating the substrate inside the atmosphere containing no moisture in the process chamber; and causing a reaction between the substrate and an adhesion accelerating agent by feeding the adhesion accelerating agent gas into the process chamber. | 03-21-2013 |
20130078821 | IMPRINT METHOD, IMPRINT APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In an imprint method according to embodiments, light that hardens a resist is irradiated to a light irradiation region near an alignment mark in order to prevent the resist from being filled in the alignment mark of a template, when the alignment process between the template and a substrate is performed. After the alignment process is completed, the resist is filled in the template pattern and the alignment mark, and then, light that hardens the resist is irradiated onto the template. | 03-28-2013 |
20130122721 | ULTRAVIOLET-CURING RESIN MATERIAL FOR PATTERN TRANSFER AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD USING THE SAME - According to one embodiment, an ultraviolet-curing resin material for pattern transfer contains at least one of 2-methyl-2-adamantyl acrylate, 2-ethyl-2-adamantyl acrylate, and 1,3-adamantanedimethanol diacrylate, isobornyl acrylate, polyfunctional acrylate, and a polymerization initiator, or contains at least one of the acrylates described above, a polymerization initiator, and fluorine-based alcohol. | 05-16-2013 |
20130280920 | Templated Monolayer Polymerization and Replication - A self-replicating monolayer system employing polymerization of monomers or nanoparticle ensembles on a defined template provides synthesis of two-dimensional single molecule polymers. Systems of self-replicating monolayers are used as templates for growth of inorganic colloids. A preferred embodiment employs SAM-based replication, wherein an initial monolayer is patterned and used as a template for self-assembly of a second monolayer by molecular recognition. The second monolayer is polymerized in place and the monolayers are separated to form a replicate. Both may then function as templates for monolayer assemblies. A generic self-replicating monomer unit comprises a polymerizable moiety attached by methylene repeats to a recognition element and an ending unit that will not interfere with the chosen recognition chemistry. The recognition element is self-complementary, unless two replicating monomers with compatible cross-linking chemistry are employed. After replication, selective mineralization and/or electroless plating may produce a two-dimensional inorganic sheet having patterned domains within it. | 10-24-2013 |
20140004714 | METHOD FOR IMPROVING POLYIMIDE NON-ADHERENCE TO SUBSTRATE | 01-02-2014 |
20140038428 | Self-Assembled Monolayer for Pattern Formation - The present disclosure is directed to a process for the fabrication of a semiconductor device. In some embodiments the semiconductor device comprises a patterned surface. The pattern can be formed from a self-assembled monolayer. The disclosed process provides self-assembled monolayers which can be deposited quickly, thereby increasing production throughput and decreasing cost, as well as providing a pattern having substantially uniform shape. | 02-06-2014 |
20140256158 | IMPRINT MASK, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, an imprint mask includes a quartz plate. The quartz plate has a plurality of concave sections formed in part of an upper surface on the quartz plate, and impurities are contained in a portion between the concave sections in the quartz plate. | 09-11-2014 |
20140273520 | ENHANCED PRODUCTIVITY FOR AN ETCH SYSTEM THROUGH POLYMER MANAGEMENT - Embodiments described herein generally relate to an apparatus and methods for reducing the deposition of polymers in a semiconductor processing chamber. A heater jacket and heat sources are provided and may be configured to maintain a uniform temperature profile of the processing chamber. A method of maintaining a uniform temperature profile of a dielectric ceiling of the processing chamber is also provided. | 09-18-2014 |
20140302687 | Substrate Processing Device, Method for Manufacturing Semiconductor Device, and Vaporizer - A substrate processing apparatus includes: a reaction chamber configured to process a substrate; a vaporizer including a vaporization container into which a processing liquid including hydrogen peroxide or hydrogen peroxide and water is supplied, a processing liquid supply unit configured to supply the processing liquid to the vaporization container, and a heating unit configured to heat the vaporization container; a gas supply unit configured to supply a processing gas generated by the vaporizer into the reaction chamber; an exhaust unit configured to exhaust an atmosphere in the reaction chamber; and a control unit configured to control the heating unit and the processing liquid supply unit such that the processing liquid supply unit supplies the processing liquid to the vaporization container while the heating unit heats the vaporization container. | 10-09-2014 |
20140308822 | DEPOSITION TECHNIQUE FOR DEPOSITING A COATING ON A DEVICE - The present invention describes a deposition method suitable for depositing a coating on a device. The method is particularly suited for depositing a self assembled monolayer (SAM) coating on a micro electro-mechanical structures (MEMS). The method employs carrier gases in order to form a deposition vapour in a process chamber within which the device is located wherein the deposition vapour comprises controlled amounts of a vapour precursor material and a vapour reactant material. Employing the described technique avoids the problematic effects of particulate contamination of the device even when the volumetric ratio of the reactant material to the precursor material is significantly higher than those ratios previously employed in the art. The vapour precursor material can be of a type that provides the MEMS with an anti-stiction coating with the associated vapour reactant material comprising water. | 10-16-2014 |
20140322921 | Method and apparatus for microwave treatment of dielectric films - A method for processing a dielectric film on a substrate comprises: depositing a porous dielectric film on a substrate; removing the porogen; stuffing the film with a protective polymeric material; performing at least one intermediate processing step on the stuffed dielectric film; placing the film in a microwave applicator cavity and heating to a first temperature to partially burn out the polymeric material; introducing a controlled amount of a polar solvent into the porosity created by the partial burn out; applying microwave energy to heat the film to a second selected temperature below the boiling point of the solvent to clean away remaining polymeric material; and applying microwave energy to heat the film to a third temperature above the boiling point of the solvent to completely burnout the residues of polymeric material. The interaction of the polar solvent with the microwaves enhances the efficiency of the cleaning process. | 10-30-2014 |
20140342576 | ULTRAVIOLET-CURABLE RESIN MATERIAL FOR PATTERN TRANSFER AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD USING THE SAME - According to one embodiment, an ultraviolet curing curable resin material for pattern transfer is provided. The resin contains isobornyl acrylate, an acrylate having a fluorene skeleton, a polyfunctional acrylate, and a polymerization initiator. | 11-20-2014 |
20150031217 | Encapsulated Nanoparticles - The present invention relates to a method for producing encapsulated nanoparticles by dispersing said nanoparticles and an encapsulating medium in a common solvent to form a first solution system and treating said first solution system with a stimulus suitable to induce simultaneous aggregation of the nanoparticles and the encapsulating medium. | 01-29-2015 |
20150064931 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - Disclosed is a film formation method, including vaporizing a plurality of raw material monomers in respective corresponding vaporizers, supplying the plurality of raw material monomers into a film formation apparatus, causing vapor deposition polymerization of the plurality of raw material monomers in the film formation apparatus to form an organic film on a substrate, and removing an impurity contained in at least one raw material monomer among the plurality of raw material monomers before the vapor deposition polymerization. | 03-05-2015 |
20150079805 | TWO STEP METHOD OF RAPID CURING A SEMICONDUCTOR POLYMER LAYER - A semiconductor device and method of making the semiconductor device is described. A semiconductor die is provided. A polymer layer is formed over the semiconductor die. A via is formed in the polymer layer. The polymer layer is crosslinked in a first process. The polymer layer is thermally cured in a second process. The polymer layer can comprise polybenzoxazoles (PBO), polyimide, benzocyclobutene (BCB), or siloxane-based polymers. A surface of the polymer layer can be crosslinked by a UV bake to control a slope of the via during subsequent curing. The second process can further comprise thermally curing the polymer layer using conduction, convection, infrared, or microwave heating. The polymer layer can be thermally cured by increasing a temperature of the polymer at a rate greater than or equal to 10 degrees Celsius per minute, and can be completely cured in less than or equal to 60 minutes. | 03-19-2015 |
20150111393 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND LITHOGRAPHY TEMPLATE - In the manufacturing method of a semiconductor device according to the present embodiment, a resist is supplied on a base material. A template including a first template region having a device pattern and a second template region being adjacent to the device pattern and having supporting column patterns is pressed against the resist on the base material. The resist is cured, thereby transferring the device pattern to the resist on a first material region of the base material corresponding to the first template region and at the same time transferring the supporting column patterns to the resist on a second material region of the base material corresponding to the second template region to form supporting columns. The supporting columns are contacted with the first template region when the device pattern is transferred to a resist supplied to the second material region. | 04-23-2015 |
20150294863 | SELECTIVE ATOMIC LAYER DEPOSITION PROCESS UTILIZING PATTERNED SELF ASSEMBLED MONOLAYERS FOR 3D STRUCTURE SEMICONDUCTOR APPLICATIONS - Methods for forming fin structure with desired materials formed on different locations of the fin structure using a selective deposition process for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes forming a patterned self-assembled monolayer on a circumference of a structure formed on a substrate, wherein the patterned self-assembled monolayer includes a treated layer formed among a self-assembled monolayer, and performing an atomic layer deposition process to form a material layer predominantly on the self-assembled monolayer from the patterned self-assembled monolayer. | 10-15-2015 |
20160049293 | METHOD AND COMPOSITION FOR PROVIDING PORE SEALING LAYER ON POROUS LOW DIELECTRIC CONSTANT FILMS - Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant (“low k”) layer by providing an additional thin dielectric film, referred to herein as a pore sealing layer, on at least a surface of the porous, low k layer to prevent further loss of dielectric constant of the underlying layer. In one aspect, the method comprises: contacting a porous low dielectric constant film with at least one organosilicon compound to provide an absorbed organosilicon compound and treating the absorbed organosilicon compound with ultraviolet light, plasma, or both, and repeating until a desired thickness of the pore sealing layer is formed. | 02-18-2016 |
20160067729 | RECYCLE PHOTOCHEMICAL TO REDUCE COST OF MATERIAL AND ENVIRONMENTAL IMPACT - This invention discloses an apparatus for coating a semiconductor wafer in a coating chamber comprising a platform for placing the semiconductor wafer thereon. The apparatus further includes a catch and recycle (C&R) apparatus comprises a rim/ring controllable to move below and surround the platform for receiving and catching a coating material spurned off in coating the semiconductor wafer. | 03-10-2016 |
20160079108 | ELECTROSTATIC CHUCK MECHANISM, SUBSTRATE PROCESSING METHOD AND SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS - An electrostatic chuck mechanism that adsorbs a semiconductor substrate includes a stage of a flat plate shape, an electrode provided in the stage, and generating an electrostatic force, a gas supply section provided in the stage, supplying gas to an upper surface of the stage, and performing temperature adjustment of a lower surface of the semiconductor substrate, a temperature adjustment section performing temperature adjustment of the gas at the time of adsorbing the semiconductor substrate, and, a substrate vertically moving mechanism provided in the stage, and vertically moving the semiconductor substrate. | 03-17-2016 |
20160126090 | Method for Processing a Semiconductor Wafer Using a Thin Edge Carrier Ring - A method for processing a semiconductor wafer in a PECVD deposition chamber with a circular pedestal and a recessed portion formed around the outer top surface of the pedestal. The method may include using a circular wafer carrier ring with a recessed portion. | 05-05-2016 |