Class / Patent application number | Description | Number of patent applications / Date published |
438766000 | Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.) | 12 |
20080261411 | Method for manufacturing SOI substrate - The present invention provides a method for manufacturing an SOI substrate by which an oxygen ion is implanted from at least one of main surfaces of a single-crystal silicon substrate to form an oxygen-ion-implanted layer and then an oxide film-forming heat treatment that changes the formed oxygen-ion-implanted layer into a buried oxide film layer is performed with respect to the single-crystal silicon substrate to manufacture the SOI substrate, the method comprising: implanting a neutral element ion having a dose amount of 1×10 | 10-23-2008 |
20090124095 | METHOD FOR FORMING PATTERNED PHOTORESIST LAYER - A method for forming a patterned photoresist is provided, which is applicable to a substrate. The method includes: performing an implantation process over the substrate; next, performing a surface treatment process; then, forming a photoresist layer over the substrate; and thereafter, patterning the photoresist layer. | 05-14-2009 |
20090170340 | METHOD OF FORMING DIELECTRIC FILMS - A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film. | 07-02-2009 |
20110092079 | METHOD AND INSTALLATION FOR PRODUCING AN ANTI-REFLECTION AND/OR PASSIVATION COATING FOR SEMICONDUCTOR DEVICES - A method of producing an anti-reflection and/or passivation coating for semiconductor devices is provided. The method includes: providing a semiconductor device precursor | 04-21-2011 |
20110230059 | Formation of Carbon-Containing Material - A method includes forming ionic clusters of carbon-containing molecules, which molecules have carbon-carbon sp | 09-22-2011 |
20110256732 | Pulsed Plasma to Affect Conformal Processing - A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed. | 10-20-2011 |
20130224965 | SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor manufacturing apparatus, which forms a metal film, and which has the following parts: a processing chamber that carries out the processing of a substrate set inside it, a gas feeding part that feeds the feed gas of the metal film and a plasma generating gas into the processing chamber, a plasma generating part that generates the plasma of the plasma generating gas, and a bias generating part that causes the ions generated by the plasma generating part to impact on the substrate. | 08-29-2013 |
20130237065 | PLASMA REACTOR WITH CONDUCTIVE MEMBER IN REACTION CHAMBER FOR SHIELDING SUBSTRATE FROM UNDESIRABLE IRRADIATION - Placing a conductive member between a plasma chamber in a remote plasma reactor and a substrate to shield the substrate from irradiation of undesirable electromagnetic radiation, ions or electrons. The conductive member blocks the electromagnetic radiation, neutralizes ions and absorbs the electrons. Radicals generated in the plasma chambers flows to the substrate despite the placement of the conductive member. In this way, the substrate is exposed to the radicals whereas damages to the substrate due to electromagnetic radiations, ions or electrons are reduced or removed. | 09-12-2013 |
20140004712 | DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND PATTERN FORMING METHOD USING THEREOF | 01-02-2014 |
20140295674 | ANGLED GAS CLUSTER ION BEAM - An angled gas cluster ion beam (“GCIB”) and methods for using the same are disclosed. Gas clusters are ionized to create a gas cluster beam directed towards a semiconductor wafer. The semiconductor wafer is positioned so that it intercepts the gas cluster beam at an angle that is non-perpendicular to the beam, so that the gas cluster ions in the beam react with structures on the semiconductor wafer asymmetrically, allowing for asymmetrical deposition on or etching of material thereon. According to one embodiment, GCIB is used to form asymmetric spacers having different materials, different thicknesses, or both. | 10-02-2014 |
20150017814 | METHOD OF FORMING GATE OXIDE LAYER - A method of forming a gate oxide layer is disclosed, which introduces a rapid laser annealing process, performed on the surface of the gate SiON layer, prior to a high-temperature annealing process performed on the gate SiON layer. This enables the method of the invention to remove the intrinsic oxide layer, protect the doped nitrogen atoms from the adverse influence of organic absorption, and lead to the formation of an amorphized surface layer which is able to prevent nitrogen atoms located around the surface from escaping by volatilization and nitrogen atoms beneath the surface from diffusing towards the SiO | 01-15-2015 |
20160076142 | Deposition Apparatus and Deposition Method Using the Same - The present invention provides a deposition apparatus and deposition method using the same. The deposition apparatus comprises: a process chamber, wherein a work piece is disposed therein; a plasma source chamber coupled to the process chamber, the plasma source chamber comprising a first plasma generator for ionizing a first gas in the plasma source chamber to generate a first plasma having ions, the ions of the first plasma with ions bombard the work piece; and a second plasma generator disposed within the process chamber, the second plasma generator ionized a second gas in the process chamber to generate a second plasma having radical, the second plasma having radical deposits a surface of the work piece. | 03-17-2016 |