Fu
Alexander Fu, Hertfordshire GB
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20100135609 | APPARATUS COMPRISING A CYLINDRICAL SUBSTRATE AND AN INTEGRATED OPTICAL CIRCUIT - Apparatus ( | 06-03-2010 |
Changchun Fu, Zurich CH
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20110184199 | Methods For Producing Paricalcitol - The present invention is directed to novel processes for the preparation of paricalcitol to novel intermediates used in these processes, and to processes for preparation of the novel intermediates. | 07-28-2011 |
Changhong Fu, Kowloon HK
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20110090965 | Generation of Synchronized Bidirectional Frames and Uses Thereof - A digital video processing method implementable on an apparatus, comprising performing on a reconstructed digital video frame, by a processor, a transform | 04-21-2011 |
Chengxuan Fu, Untergruppenbach DE
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20090210171 | MONITORING DEVICE AND MONITORING METHOD FOR A SENSOR, AND SENSOR - A monitoring device for a sensor of a motor vehicle, in particular a fuel cell motor vehicle, includes: a first sensor monitoring module for monitoring an operation of the sensor for faults; a second sensor monitoring module for monitoring the operation of the sensor for faults; a third sensor monitoring module for monitoring an operation of the second sensor monitoring module; a first data processing unit, which includes the first sensor monitoring module and is able to be coupled to the sensor; a second data processing unit, which is coupled to the first data processing unit, the second data processing unit being arranged such that a fault response signal is able to be output when a faulty operation of the sensor is detected. | 08-20-2009 |
20110114188 | Method for operating a tank device especially of a motor vehicle - In a method for operating a tank device of a motor vehicle having a tank and a valve which is adjustable by a driver stage connected to an energy supply, the valve is closed in response to an ascertained fault. Based on the fault, two output signals are formed for closing the valve: one of the output signals represents a relay signal and interrupts the energy supply to the driver stage. | 05-19-2011 |
Chih Chiang Fu, Kaohsiung City TW
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20120265206 | MEDICAL DRILL - A medical drill is disclosed, which is made of amorphous alloy, the amorphous alloy is zirconium amorphous alloy comprising 45 at % or above of zirconium, wherein the tensile strength of the medical drill is 1500-2500 Mpa, and the Vicker's hardness of the medical drill is 400-750. Moreover, a medical drill made of titanium amorphous alloy is also disclosed. | 10-18-2012 |
20130105300 | Application of Metallic Glass Coating for Improving Fatigue Resistance of Aluminum Alloys | 05-02-2013 |
20130108888 | APPLICATION OF METALLIC GLASS AND METALLIC GLASS THIN FILM COATING ON THE SHARPNESS ENHANCEMENT OF CUTTING TOOLS | 05-02-2013 |
20140353139 | APPLICATION OF METALLIC GLASS AND METALLIC GLASS THIN FILM COATING ON THE SHARPNESS ENHANCEMENT OF CUTTING TOOLS - A cutting tool having a metallic glass thin film (MGTF) coated thereon, a metallic glass cutting tool, and methods of fabricating the same are disclosed. The cutting tool having metallic glass thin film coated thereon comprises: a cutting element having a sharpened portion, and the cutting element is made of metal; and a metallic glass thin film coated on the cutting element, and the metallic glass is represented by the following formula 1 or formula 2, | 12-04-2014 |
Chin-Ming Fu, Zhubei City TW
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20110241746 | LOW POWER SMALL AREA STATIC PHASE INTERPOLATOR WITH GOOD LINEARITY - A static phase interpolator includes first and second plurality of inverters coupled in parallel between an output node and first and second input nodes for receiving first and second clock signals, and first and second plurality of switch elements coupled to the first and second plurality of inverters for selectively turning on individual ones of the inverters in response to a phase control signal. An inverter is coupled the output node. The interpolator may include a slew rate controller coupled to the first and second input nodes. Also, each inverter of the interpolator may include a PMOS transistor in series with an NMOS transistor and have a respective one of the switch elements disposed between the PMOS and NMOS transistors. | 10-06-2011 |
20110255643 | Digital Second-Order CDR Circuits - A method for performing a clock and data recovery includes providing data and a clock; determining early/late values of the data to generate a first-order phase code using the data and the clock; and accumulating first-order phase codes retrieved from different finite state machine (FSM) cycles to generate a second-order phase code. A plurality of candidate total phase codes is generated from the second-order phase code. A multiplexing is performed to the plurality of candidate total phase codes to output one of the plurality of candidate total phase codes as a total phase code. The multiplexing is controlled by the first-order phase code. A brake machine may be implemented to prevent over-compensation of phases. | 10-20-2011 |
Chit Yaw Fu, Singapore SG
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20120128592 | SURFACE ENHANCED RAMAN SPECTROSCOPY (SERS) COMPOUNDS AND METHODS OF THEIR PREPARATION - A compound for detecting an analyte using Surface Enhanced Raman Spectroscopy (SERS) and a method of forming the compound is provided. The compound has Formula I: | 05-24-2012 |
20130171667 | PHOTONIC CRYSTAL FIBER SENSOR - A method for sensing, a photonic crystal fiber, a method for fabricating a photonic crystal fiber sensor, and a Surface Enhanced Raman Scattering (SERS) sensing apparatus. The method for sensing comprises the steps of providing a photonic crystal fiber comprising a hollow core and a plurality of cladding holes around the hollow core; providing Surface Enhanced Raman Scattering (SERS) active nanoparticles; and adapting the SERS active nanoparticles and/or the fiber for SERS sensing. | 07-04-2013 |
Chiun-Lern Fu, Hsinchu County TW
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20120170282 | LIGHT MIXING MODULE - A mixing light module includes a matrix, a fluorescent film, and a plurality of micro-structures. The matrix includes an incidence surface, an emission surface and a reflective surface. The fluorescent film disposed on or above the emission surface has an upper surface and a lower surface and includes a plurality of fluorescent particles. | 07-05-2012 |
Chuan-Cheng Fu, Hsichih TW
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20120229300 | Holder Device Capable of Automatically Adjusting Orientation of an Electronic Device Placed Thereon, and Assembly of Holder Device and Electronic Device - A holder device is capable of automatically adjusting orientation of an electronic device placed thereon based upon position of a user. The holder device includes a holder body, a torque unit, and a control unit. The holder body includes a base, a movable arm set pivoted to the base, and a fastening seat for placing the electronic device thereon. The torque unit is disposed at pivot joints of the movable arm set and provides power for driving pivoting movement of the movable arm set. The control unit is disposed to receive user-associated position information and is configured to generate a control command corresponding to the position information and to transmit the control command to the torque unit so as to control the torque unit to move the movable arm set for adjusting orientation of the electronic device placed on the fastening seat. | 09-13-2012 |
Chuan-Hsien Fu, Zhonghe City TW
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20110309424 | STRUCTURE OF MEMORY DEVICE AND PROCESS FOR FABRICTING THE SAME - A structure of a memory cell of a static random memory device and a process for fabricating the same are disclosed. The memory cell includes a substrate having an active region including an N-well and a shallow trench isolation structure; a first gate and a second gate formed over the substrate; a halo region, a LLD, and a source and drain region formed on two sides of the first gate; an interlevel dielectric layer covering the substrate, the first and second gates; and a contact penetrating the interlevel dielectric layer and extending to the source and drain region, no halo region is formed under the contact. | 12-22-2011 |
David Fu, New Taipei City TW
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20120157269 | INNER BLADDER STRUCTURE OF PUNCHING BAG - The present invention relates to an inner bladder structure of punching bag which comprises one inner bladder; the said inner bladder further comprises at least one gas container and at least one liquid container. Utilizing liquid, gas and solidifying substances, the said inner bladder structure creates different tactile feels to diversify the effect of training. | 06-21-2012 |
Diankui Fu, City Of Tyumen RU
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20090192057 | Method for Single-Stage Treatment of Siliceous Subterranean Formations - In a method of treating a sandstone-containing formation penetrated by a wellbore, a treatment fluid comprising an aqueous fluid containing a Bronsted acid, a hydrogen fluoride source and an organic acid or salt thereof that is substantially soluble in the aqueous fluid is formed. The treatment fluid contains less than about 2% of fluoride (F | 07-30-2009 |
Diankui Fu, Tyumen RU
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20080236832 | Method for Treating Subterranean Formation - A method is for treating a subterranean formation penetrated by a wellbore is given which comprises injecting into the subterranean formation a well treatment fluid having a high pH. The well treatment fluid comprises a viscoelastic surfactant having a degradable linkage, a hydrolysable fiber and a pH control material | 10-02-2008 |
20090192054 | Method for Single-Stage Treatment of Siliceous Subterranean Formations - In a method of treating a sandstone-containing formation penetrated by a wellbore, a treatment fluid comprising an aqueous fluid containing a Bronsted acid, a hydrogen fluoride source and an organic acid or salt thereof that is substantially soluble in the aqueous fluid is formed. The treatment fluid contains less than about 2% of fluoride (F | 07-30-2009 |
20090247430 | Elongated particle breakers in low pH fracturing fluids - A method is given for the delayed breaking of a low pH fracturing fluid with acid-generating degradable elongated particles as a breaker for borate-crosslinked polymers. The shape, size, chemical composition and concentration of the elongated particles are used to control the period of delay before the polymer viscosity is broken. | 10-01-2009 |
Diankui Fu, Miri MY
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20100132948 | Delayed Breaking of Well Treatment Fluids - An embodiment of a downhole method of breaking of a well treatment fluid relates to overcrosslinking a polymeric thickener with an overcrosslinking agent such as an excess crosslinking agent and/or an excess alkaline material, wherein either or both the agent and/or material may be encapsulated. | 06-03-2010 |
Dongchuan Fu, Clayton AU
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20110303271 | PHOTOVOLTAIC DEVICES - A photovoltaic device including cathode and anode electrodes ( | 12-15-2011 |
Guoliang Fu, Oxfordshire GB
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20100105037 | METHODS FOR AMPLIFYING AND DETECTING NUCLEIC ACID SEQUENCES - The present invention, in different aspects and embodiments, provides nucleic acid amplification and detection methods that are both sensitive and fast. In various aspects there are disclosed amplification methods employing different combinations of primers to which can achieve exponential amplification and strand displacement, such as to generate a more than two fold increase of the amount of a target nucleic acid sequence during repeated cycles, while additionally permitting the production of single stranded products. Also provided are detection systems and kits. | 04-29-2010 |
20100184036 | METHODS FOR DETECTING NUCLEIC ACID SEQUENCES - The present invention provides methods and kits for detecting the presence or absence or amount of a target nucleic acid or at least one variant nucleotide in one or more target nucleic acids contained in a sample using appropriate primers. The invention is based on systems whereby there is extension-dependent degradation of the primers in the presence of the target, which degradation leads to a detectable signal. | 07-22-2010 |
20100227320 | NUCLEIC ACID DETECTION - This invention provides methods and kits for enriching and/or detecting a nucleic acid with at least one variant nucleotide from a nucleic acid population in a sample. Methods employ the use of enriching primers and bridge-probes for enriching and detecting target nucleic acids. Extension of the enriching primer permits amplification of the target nucleic acid having the variant nucleotide. | 09-09-2010 |
20110207131 | MULTIPLEX AMPLIFICATION AND DETECTION - The invention relates to the field of multiplex amplification. In particular, the invention relates to methods for assaying a sample for one or more nucleic acid targets in a single reaction based on the distinct melting temperatures or melting profiles of primers and/or probes. The invention also provides probes and kits for use in such methods. | 08-25-2011 |
20110300544 | ENHANCED TAQMAN PROBE BASED AMPLIFICATION - The present invention relates to the field of amplification and detection. In particular, the invention relates to methods for assaying a sample for one or more nucleic acid targets in a single reaction based on target amplification using a polymerase with 5′ nuclease activity. The invention also provides probes and kits for use in such method. | 12-08-2011 |
Guoliang Fu, Oxford GB
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20120115145 | STRAND DISPLACEMENT ACTIVITY OF MODIFIED POLYMERASES AND USES THEREOF - The present invention is directed to the use of the strand displacement activity of a modified polymerase. The present invention is more specifically directed to a modified Taq DNA polymerase, which exhibits strand displacement activity, whereas the native polymerase does not possess the strand displacement activity. | 05-10-2012 |
Guoliang Fu, Abingdon GB
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20120164645 | MULTIPLEX AMPLIFICATION AND DETECTION - The invention relates to the field of multiplex amplification. In particular, the invention relates to methods for assaying a sample for one or more nucleic acid targets in a single reaction based on the distinct melting temperatures or melting profiles of primers and/or probes. The invention also provides probes and kits for use in such methods. | 06-28-2012 |
20130267434 | MULTIPLEX AMPLIFICATION AND DETECTION - The invention relates to the field of multiplex amplification. In particular, the invention relates to methods for assaying a sample for one or more nucleic acid targets in a single reaction based on the distinct melting temperatures or melting profiles of primers and/or probes. The invention also provides probes and kits for use in such methods. | 10-10-2013 |
Hoi Wai Fu, Hong Kong HK
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20120175381 | Gumball machine - A gumball machine includes a gumball container having a housing that contains a plurality of gumballs, and a dispensing section that has a knob for controlling the dispensing of a gumball. The gumball machine also includes a base having a bottom portion that is seated on a surface, the base having a body with an opening through which a gumball is dispensed. A plurality of novelty modules are removably connected to each other, with each module having a different novelty feature. The plurality of novelty modules includes an upper module that is removably connected to the dispensing section, and a lower module that is removably connected to the base. | 07-12-2012 |
20120298685 | Gumball machine with lights and sound - A gumball machine includes a gumball container that contains a plurality of gumballs, and a neck portion coupled to the gumball container. The gumball machine has an elongated transparent housing having an upper end coupled to the neck portion, and a base coupled to the lower end of the elongated housing. A speaker is positioned inside the base and is electrically coupled to a switch, a plurality of lighting elements are arranged inside the transparent housing and electrically coupled to the switch, and a power supply is housed inside the base and electrically coupled to the switch, the speaker and the lighting elements. When an actuator is actuated, the actuator turns on the switch to cause the lighting elements to flash, the speaker to broadcast sound and/or music, and a gumball to be dispensed from the gumball container. | 11-29-2012 |
Hsin-Chiao Fu, Kaohsiung City TW
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20120118429 | SLOW RELEASING DEVICE FOR GASEOUS CHLORINE DIOXIDE AND METHOD FOR MAKING SAME - A method for making a slow releasing device for slowing releasing chlorine dioxide includes sending gaseous chlorine dioxide into a receiving container containing a plurality of particulate carriers. Each particulate carrier has a plurality of pores in a surface thereof. The receiving container is placed in a low-temperature environment below 30° C. The gaseous chlorine dioxide is absorbed by the particulate carriers. The particulate carries is packaged in at least one container that is subsequently sealed. The gaseous chloride dioxide can be purified before entering the receiving container. Superfluous chloride dioxide can be dissolved or absorbed in water in an absorbing tank on a circulating pipeline connected to the receiving container via an outlet pipe. | 05-17-2012 |
Huili Fu, Hong Kong HK
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20090294931 | Methods of Making an Electronic Component Package and Semiconductor Chip Packages - An electronic component package having an EMI shielded space is disclosed. The package comprises a substrate having an electronic component located on its surface and a conductive enclosure having a top and downwardly extending sides enclosing the component and defining a shielded space. A vent opening is provided through the substrate and is located in the shielded space for venting the shielded space. A second vent opening may be provided in the top of the conductive enclosure. | 12-03-2009 |
Jia Fu, Singapore Science Park 2 SG
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20110018053 | MEMORY CELL AND METHODS OF MANUFACTURING THEREOF - A memory cell is provided. The memory cell comprises a first wire shaped channel structure; and a charge trapping structure surrounding the perimeter surface of the first wire shaped channel structure, the charge trapping structure comprising two charge trapping partial to structures, wherein each charge trapping partial structure is formed of a different material capable of storing electrical charges. Methods of manufacturing the memory cell are also provided. | 01-27-2011 |
Jian-Ming Fu, Taichung City TW
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20120008352 | METHOD AND APPARATUS OF PROVIDING A BIASED CURRENT LIMIT FOR LIMITING MAXIMUM OUTPUT POWER OF POWER CONVERTERS - A biased current-limit circuit for limiting a maximum output power of a power converter includes an oscillator for generating a pulse signal and an oscillation signal. A waveform generator generates a waveform signal in response to the oscillation signal. A sample-hold circuit is used to sample the waveform signal to generate a hold signal in response to a switching signal. The sample-hold circuit further samples the hold signal to generate a current-limit threshold in response to a second-sampling signal. A current comparator is utilized to compare a current-sensing signal with the current-limit threshold to limit a maximum on-time of the switching signal. | 01-12-2012 |
Jiong Fu, Singapore SG
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20110234184 | START-UP IN-RUSH CURRENT PROTECTION CIRCUIT FOR DCDC CONVERTER - A protection circuit for protecting DCDC converter with a power MOS transistor from start-up in-rush current includes a coupling capacitor and a voltage clamping circuit. By using the coupling capacitor to turn-off the power MOS transistor, there is no current consumed during the normal operation of the circuit. Enable signal or leakage current circuit is used to discharge the capacitor so that the circuitry can work in another turning-on of power supply. | 09-29-2011 |
20120176039 | LED MATRIX OPEN/SHORT DETECTION APPARATUS AND METHOD - An apparatus to detect faulty connection of LED (open/short conditions) which may affect the function of LED display panel is presented. The apparatus basically controls the switches through control algorithm circuit to get the information of LED driver output pins voltage and compare them with two reference voltages to determine the open/short condition of individual LED. | 07-12-2012 |
20120176062 | LED MATRIX DRIVER GHOST IMAGE PREVENTION APPARATUS AND METHOD - LED drivers specially directed to LED matrix driver's ghost image prevention is disclosed. The LED driver receives an external input and decodes the input to produce a time multiplex timing on turning on an LED array. The LED driver inserts a dead time to the outputs and during this time the ghost image prevention circuit discharges the output stray capacitances to a predetermined level. | 07-12-2012 |
Ji-Rong Fu, Yunlin TW
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20120060371 | METHOD FOR MANUFACTURING TWO-PHASE FLOW HEAT SINK - The present invention relates to a method for manufacturing a two-phase flow heat sink. The two-phase flow heat sink comprises an evaporation chamber and a capillary layer. The material of the capillary layer, which has at least a porous structure, is cooled and disposed on the inner side of the evaporation chamber from a melted state. The method first sprays the thermally melted material of the capillary layer on the substrate of the evaporation chamber for forming the capillary layer on the substrate. Because the capillary layer is sprayed on the substrate of the evaporation chamber, the capillary layer is distributed irregularly on the substrate and forming irregularly distributed holes. Thereby, the flowing space for fluids in the evaporation chamber is increased, and hence enhancing the heat transfer efficiency of the heat sink. | 03-15-2012 |
Jui-Ying Fu, Guishan Township TW
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20120037155 | Novel Auxiliary Chamber for Inhaled-Drugs - An auxiliary chamber for inhaled-drugs includes a hollow tube body and a hollow side tube; and a unidirectional air valve which only allows air from an inlet flowing to an outlet end is located at the inlet end of the hollow tube body, wherein the outlet end of the hollow tube body is connected to an endotracheal tube. The hollow side tube connects with a lateral hole of the hollow tube body at one end, and a special universal adapter at the other end. The special universal adapter has a small through hole which is used to accommodate an inhaler therein to release inhaled drugs in the inhaler into the hollow tube body, and the inhaled drugs moves from the inlet end with air flow to the outlet end after entering the hollow tube body to help patients with respiratory failure take medicine. | 02-16-2012 |
Jun Fu, Erfurt DE
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20100059851 | CMOS CIRCUITS COMBINING HIGH VOLTAGE AND RF TECHNOLOGIES - A CMOS circuit comprises at least one high voltage transistor (having gate and drain operating voltages of greater than 8V) and at least one high frequency capable transistor (having a maximum switching frequency of between 100 MHz and 1000 GHz) wherein said transistors are integrated on the same semiconductor substrate so as to allow the simple integration of high voltage circuits and RF (radio frequency) CMOS circuits on the same integrated circuit. | 03-11-2010 |
Jun Fu, Dresden DE
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20090298117 | METHODS FOR HETEROLOGOUS EXPRESSION OF SECONDARY METABOLITES - The invention provides a method for the heterologous expression of a secondary metabolite encoded by a biosynthetic pathway. Also provided is a method for introducing a large sized DNA molecule into the chromosome of a heterologous host using a transposable element. Novel myxochromide S derivatives are also provided. | 12-03-2009 |
20110165630 | Method of Nucleic Acid Recombination - The invention provides a method for inserting a single stranded replacement nucleic acid into a target nucleic acid, said method comprising the steps of: a) generating a single stranded replacement nucleic acid from a double stranded nucleic acid, wherein the double stranded nucleic acid is adapted at one or both of its 5′ ends such that preferential degradation of one strand and/or strand separation generates the single stranded replacement nucleic acid, wherein the single stranded replacement nucleic acid comprises a 5′ region that is identical to sequence on the target nucleic acid, a 3′ region that is identical to sequence on the target nucleic acid and optionally a replacement region between the 5′ and 3′ regions that is not identical to sequence on the target N nucleic acid, b) exposing the target nucleic acid to the single stranded replacement nucleic acid under conditions suitable for recombination to occur between the single stranded replacement nucleic acid and the target nucleic acid, and c) selecting a target nucleic acid whose sequence has been altered by inclusion of said single stranded replacement nucleic acid. Other methods for modifying target nucleic acids are also provided. | 07-07-2011 |
20130210681 | Direct Cloning - A method for performing homologous recombination between at least a first nucleic acid molecule and a second nucleic acid molecule which share at least one region of sequence homology. A method for improving the efficiency of homologous recombination. | 08-15-2013 |
Kit Yu Fu, Kowloon HK
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20110189681 | STAT3 AND TYK2 AS DRUG TARGETS FOR NEURODEGENERATIVE DISEASES - The invention provides Stat3 and Tyk2 targets that have importance for diagnosis of neurode-generative diseases such as Alzheimer's disease. Stat3 and Tyk2 are also important as targets for drug development for neurodegenerative diseases. | 08-04-2011 |
Kuo Kuei Fu, Guishan Township TW
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20120256298 | MONITORING PATTERN, AND PATTERN STITCH MONITORING METHOD AND WAFER THEREWITH - A monitoring pattern for pattern stitch in double patterning is provided with a plurality of pattern cuts that include at least one line-ended cut and at least one non-line-ended cut, wherein every pattern cut has a stitching critical dimension (CD). A semiconductor wafer having at least one target pattern corresponding to the monitoring pattern is also provided. A method for monitoring pattern stitch can be preformed to check for pattern cut displacement in stitching areas and to increase reliability and printability of layouts, by comparing corresponding stitching critical dimensions of the target pattern and the monitoring pattern. | 10-11-2012 |
20120258386 | MODEL OF DEFINING A PHOTORESIST PATTERN COLLAPSE RULE, AND PHOTOMASK LAYOUT, SEMICONDUCTOR SUBSTRATE AND METHOD FOR IMPROVING PHOTORESIST PATTERN COLLAPSE - A model of defining a photoresist pattern collapse rule is provided. A portion of the photoresist pattern which corresponds to a second line pattern of a photomask layout is defined as non-collapse if d≧5a and c≧1.5b or if 5a>d≧3a and c≧1.2b, wherein b is the widths of two first line patterns, c is the width of a second line pattern of the photomask layout, and a and d are distances between the second line pattern and the two first line patterns. Accordingly, a photomask layout, a semiconductor substrate and a method for improving photoresist pattern collapse for post-optical proximity correction are also provided. | 10-11-2012 |
20120259445 | METHOD FOR MATCHING ASSISTANT FEATURE TOOLS - A method for matching assistant feature tools includes the steps of: generating an objective assistant feature according to a specific test layout by a first assistant feature tool; generating a compared assistant feature according to the specific test layout by a second assistant feature tool; and determining whether to accept or reject the second assistant feature tool by comparing the compared assistant feature with the objective assistant feature. | 10-11-2012 |
20130336571 | MASK PATTERN ANALYSIS APPARATUS AND METHOD FOR ANALYZING MASK PATTERN - A pattern analysis method includes the steps of: grouping a plurality of polygons in a circuit layout into a plurality of polygon groups; locating a potential defect area of each polygon group according to an aerial image of the circuit layout; determining a representing point of the potential defect area of each polygon group; determining representing points of the plurality of polygons in each polygon group; and comparing a distribution pattern of the representing points of the plurality of polygons relative to the representing point of the potential defect area in one of the polygon groups with a distribution pattern of the representing points of the plurality of polygons relative to the representing point of the potential defect area in another of the polygon groups. The steps aforesaid are executed by a processor in a computer system. | 12-19-2013 |
Li Dien Fu, Jinsha Township TW
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20120147153 | DISPLAY APPARATUS AND METHOD FOR REAL-TIME RADIATION PATTERN VISUALIZATION - A display apparatus for real-time radiation pattern visualization comprises a positioning module, a radiation pattern measuring module and an image processing module. The positioning module is used to measure a distance of an object from the positioning module and locate the orientation of the object. The radiation pattern measuring module is used to receive radiation of the object. The image processing module is coupled with the positioning module and the radiation pattern measuring module, and processes the radiation to generate a stereoscopic radiation pattern signal. According to the distance and orientation of the object, the stereoscopic radiation pattern signal is displayed in the display interface for engineers in the workplace to estimate the calibration of the real-time radiation pattern. | 06-14-2012 |
Lin Fu, Singapore SG
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20120246759 | MEDIA COMPOSITIONS, SELECTION METHODS AND AGROBACTERIUM STRAINS FOR TRANSFORMATION OF PLANTS - The present invention relates to the field of the production of transgenic plants through | 09-27-2012 |
Liwei Fu, Stuttgart DE
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20080291117 | Metamaterial Having the Capability of Broadband Left-Hand Guidance of Electromagnetic Waves - A metamaterial having a negative refractive index is presented, which has a dielectric carrier material ( | 11-27-2008 |
Ming Sun Fu, Kowloon HK
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20110013803 | METHOD AND APPARATUS FOR HIDING DATA FOR HALFTONE IMAGES - We propose methods for generating a halftone image, in which each pixel takes one of two tone values. The generated image contains hidden data, which is present at data storage pixels chosen using a pseudo-random number generator. In a first case, the data is hidden within an existing halftone image by reversing the tone value at certain of the data storage pixels, and at pixels neighbouring the data storage pixels. In a second case, the halftone image is generated from a grey-scale image, and data is hidden during this conversion process. | 01-20-2011 |
20120207344 | METHOD AND APPARATUS FOR HIDING DATA FOR HALFTONE IMAGES - We propose methods for generating a halftone image, in which each pixel takes one of two tone values. The generated image contains hidden data, which is present at data storage pixels chosen using a pseudo-random number generator. In a first case, the data is hidden within an existing halftone image by reversing the tone value at certain of the data storage pixels, and at pixels neighbouring the data storage pixels. In a second case, the halftone image is generated from a grey-scale image, and data is hidden during this conversion process. | 08-16-2012 |
Pho Ling Fu, Singapore SG
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20090256172 | METHOD OF LASER ANNEALING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY - A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×10 | 10-15-2009 |
Poh Ling Fu, Singapore SG
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20120061678 | METHOD OF LASER ANNEALING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY - A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×10 | 03-15-2012 |
Qingxi Fu, Karlsruhe DE
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20100028757 | CERAMIC MATERIAL COMBINATION FOR AN ANODE OF A HIGH-TEMPERATURE FUEL CELL - The invention relates to an anode for a high-temperature fuel cell having an anode substrate and/or a functional anode layer, comprising a porous ceramic structure having a first predominantly electron-conducting phase with the general empirical formula Sr | 02-04-2010 |
Qiuyun Fu, Dresden DE
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20120068827 | SELF-POWERED RFID SENSING SYSTEM FOR STRUCTURAL HEALTH MONITORING - An RFID-based sensing system includes a piezoelectric arrangement mountable at least partially on a structure, an RFID transponder connected to the piezoelectric arrangement, and an antenna connected to the RFID transponder and/or being integrated into the RFID transponder. The piezoelectric arrangement and/or the RFID transponder are adapted to convert kinetic energy provided by the structure into electrical energy usable for powering the RFID transponder and to generate sensing information with respect to a state of the structure. The RFID-based sensing system also includes an RFID reader. | 03-22-2012 |
Rongqlang Fu, Crescent SG
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20110284376 | SYSTEMS AND TECHNIQUES FOR ELECTRODIALYSIS - Electrochemical separation devices are configured for lower energy consumption. Techniques for reducing shadow effect may involve providing distance between a spacer screen and an adjacent ion-selective membrane. A spacer having a screen that is thin relative to a surrounding frame may be used. Mild pressure may also be applied to a compartment to promote distance between a spacer screen and an adjacent ion-selective membrane. | 11-24-2011 |
Rongzhao Fu, Hong Kong Science Park HK
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20090221048 | Use of Glucose Isomerase Mutants - This invention provides use of a series of recombinant | 09-03-2009 |
Shao-Ming Fu, Tu-Cheng TW
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20120241185 | ELECTRONIC DEVICE HOUSING AND METHOD OF MANUFACTURING THE SAME - An electronic device housing includes a bottom layer, a adhesion layer and a protection layer. The adhesion layer is located on the bottom layer. The protection layer is located on the adhesion layer. The electronic device housing has excellent appearance and high durability. The present disclosure also provides a method of manufacturing the electronic device housing. | 09-27-2012 |
20120244321 | METHOD FOR MANUFACTURING A PRODUCT SHELL AND STRUCTURE - The disclosure provides a method for manufacturing a product shell. A diaphanous mold with a recess and a coating layer located inside the recess are provided. A substrate is disposed inside the recess. The coating layer is located between the recess and the substrate. The coating layer is cured to combine with the substrate by a curing device through the diaphanous mold. The substrate is then removed from the diaphanous mold to form the product shell. | 09-27-2012 |
20120244385 | METAL HOUSING AND SURFACE TREATING METHOD THEREOF - A surface treating method of a metal housing includes the following steps. First, a workpiece is provided. The workpiece includes a surface formed by a metal material. Thereafter, the workpiece is pre-treated to clean the surface of the metal material. Next, a titanium diffusion treating is performed on the workpiece to form a titanium-containing diffusion layer on the surface of the metal material. | 09-27-2012 |
20120251828 | SHELL AND MANUFACTURING METHOD - A method for manufacturing a shell includes the following steps. A diaphanous mold having a cavity is provided. A plastic layer is disposed on a surface of the cavity of the diaphanous mold. A glue layer is disposed on the plastic layer. A substrate is disposed on and contacting the glue layer. The glue layer is solidified such that the substrate is adhered on the plastic layer by the solidified glue layer. The shell which comprises the substrate, the glue layer, and the plastic layer is separated from the diaphanous mold. | 10-04-2012 |
20130044059 | TOUCH-CONTROL TYPE KEYBOARD - A touch-control type keyboard includes a transparent cover board and a touch-control module laminated with the transparent cover board. The transparent cover board includes an outer surface and an inner surface opposite to the outer surface. The outer surface of the transparent cover board includes a tactual zone and a relative anti-tactual zone. The tactual zone includes micro structures on the outer surface. | 02-21-2013 |
Siu Ming Fu, Hong Kong HK
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20110142034 | CONTROL OF BIT-RATE AND PACKET DUPLICATION IN A REAL-TIME MEDIA STREAM - A method for controlling a real-time media stream between a sender and a receiver. The method includes streaming, from the sender, media packets over a network at a bit-rate, determining at the sender a loss-rate for the streamed media packets not received at the receiver. The sender optionally generates duplicate packets for a selected number of media packets and streams the duplicate packets over the network when the loss-rate is above a first loss-rate threshold, or varies the bit-rate of streaming the media packets over the network when the loss-rate is above a second loss-rate threshold. | 06-16-2011 |
Ssu-I Fu, Kaohsiung County TW
Patent application number | Description | Published |
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20120139042 | SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench. | 06-07-2012 |
20120264297 | METHOD FOR CREATING VIA IN IC MANUFACTURING PROCESS - In a method for creating a via in an IC manufacturing process, a substrate is provided and a circuitry structure is formed over the substrate. Then, a dielectric layer is formed over the circuitry structure; a hard mask is formed on and a trench is created through the dielectric layer; a coating layer is formed on the hard mask, filling the trench; an etch opening is defined in the coating layer by performing a pattern transfer process, wherein a width of the etch opening is greater than a width of the trench; and the bottom of the trench exposed from the etch opening is etched off with the hard mask, thereby creating a via for conductors. | 10-18-2012 |
Ssu-I Fu, Kaohsiung City TW
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20120225545 | Method of Fabricating Semiconductor Device - The present invention provides a method of fabricating a semiconductor device. A substrate is provided. A first region and a second region are defined on the substrate. A first interfacial layer, a sacrifice layer and a sacrifice gate layer are disposed on the first region. The sacrifice layer and the sacrifice gate layer are disposed on the second region of the substrate. Next, a first etching step is performed to remove the sacrifice gate layer in the first region and the second region. Then, a second etching step is performed to remove the sacrifice layer in the first region and the second region to expose the substrate of the second region. Lastly, a second interfacial layer is formed on the substrate of the second region. | 09-06-2012 |
20130095616 | METHOD FOR MANUFACTURING MULTI-GATE TRANSISTOR DEVICE - A method for manufacturing multi-gate transistor device includes providing a semiconductor substrate having a patterned semiconductor layer, a gate dielectric layer and a gate layer sequentially formed thereon, forming a multiple insulating layer sequentially having a first insulating layer and a second insulating layer and covering the patterned semiconductor layer and the gate layer, removing a portion of the multiple insulating layer to simultaneously form a first spacer around the gate layer and a second spacer around the patterned semiconductor layer, removing the second spacer to expose a portion of the first insulating layer covering the patterned semiconductor layer and simultaneously removing a portion of the first spacer to form a third spacer around the gate layer, and removing the exposed first insulating layer to expose the patterned semiconductor layer. | 04-18-2013 |
20130154012 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE - A manufacturing method for semiconductor device having metal gate includes providing a substrate having a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device having a first gate trench and the second semiconductor device having a second gate trench; sequentially forming a high dielectric constant (high-k) gate dielectric layer and a multiple metal layer on the substrate; forming a first work function metal layer in the first gate trench; performing a first pull back step to remove a portion of the first work function metal layer from the first gate trench; forming a second work function metal layer in the first gate trench and the second gate trench; and performing a second pull back step to remove a portion of the second work function metal layer from the first gate trench and the second gate trench. | 06-20-2013 |
20130183825 | METHOD FOR MANUFACTURING DAMASCENE STRUCTURE - A method for manufacturing a damascene structure includes providing a substrate having a dielectric layer formed thereon, forming at least a trench in the dielectric layer, forming at least a via hole and a dummy via hole in the dielectric layer, forming a first conductive layer filling up the trench, the via hole and the dummy via hole on the substrate, and performing a chemical mechanical polishing process to form a damascene structure and simultaneously to remove the dummy via hole. | 07-18-2013 |
20130200470 | SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME - A semiconductor structure and a method of fabricating the same comprising the steps of providing a substrate, forming at least one fin structure on said substrate, forming a gate covering said fin structure, forming a plurality of epitaxial structures covering said fin structures, performing a gate pullback process to reduce the critical dimension (CD) of said gate and separate said gate and said epitaxial structures, forming lightly doped drains (LDD) in said fin structures, and forming a spacer on said gate and said fin structures. | 08-08-2013 |
20130203230 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate is provided. An ozone saturated deionized water process is performed to form an oxide layer on the substrate. A dielectric layer is formed on the oxide layer. A post dielectric annealing (PDA) process is performed on the dielectric layer and the oxide layer. | 08-08-2013 |
20130237046 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate having a first area and a second area is provided. A thick oxide layer and a dummy gate layer are formed on the substrate and in the first area and the second area. The dummy gate layer is removed to expose the thick oxide layer. The thick oxide layer in the first area is removed and then a thinner oxide layer is formed in the first area; or, the thick oxide layer in the first area is thinned down and a thinner oxide layer is therefore formed. | 09-12-2013 |
20130302976 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device is provided. A first interfacial material layer is formed by a deposition process on a substrate. A dummy gate material layer is formed on the first interfacial material layer. The dummy gate material layer and the first interfacial material layer are patterned to form a stacked structure. An interlayer dielectric (ILD) layer is formed to cover the stacked structure. A portion of the ILD layer is removed to expose a top of the stacked structure. The stacked structure is removed to form a trench in the ILD layer. A second interfacial layer and a first high-k layer are conformally formed at least on a surface of the trench. A composite metal layer is formed to at least fill up the trench. | 11-14-2013 |
20140015056 | MULTI-GATE MOSFET AND PROCESS THEREOF - A multi-gate MOSFET includes a substrate, a dielectric layer and at least a fin-shaped structure. The substrate has a first area and a second area. The dielectric layer is only located in the substrate of the first area. At least a fin-shaped structure is located on the dielectric layer. Moreover, the present invention also provides a multi-gate MOSFET process forming said multi-gate MOSFET. | 01-16-2014 |
20140017867 | SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench. | 01-16-2014 |
20140035066 | Non-Planar FET and Manufacturing Method Thereof - The present invention provides a non-planar FET which includes a substrate, a fin structure, a sub spacer, a gate, a dielectric layer and a source/drain region. The fin structure is disposed on the substrate. The sub spacer is disposed only on a middle sidewall of the fin structure. The gate is disposed on the fin structure. The dielectric layer is disposed between the fin structure and the gate. The source/drain region is disposed in the fin structure. The present invention further provides a method of forming the same. | 02-06-2014 |
20140077229 | SEMICONDUCTOR STRUCTURE - A non-planar semiconductor structure comprises a substrate, at least one fin structure on the substrate, a gate covering parts of the fin structures and part of the substrate such that the fin structure is divided into a channel region stacking with the gate and source/drain region at both sides of the gate, a plurality of epitaxial structures covering on the source/drain region of the fin structures, a recess is provided between the channel region of the fin structure and the epitaxial structure, and a spacer formed on the sidewalls of the gate and the epitaxial structures, wherein the portion of the spacer filling in the recesses is flush with the top surface of the epitaxial structures. | 03-20-2014 |
20140106557 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE - A manufacturing method for semiconductor device having metal gate includes providing a substrate having a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device having a first gate trench and the second semiconductor device having a second gate trench; sequentially forming a high dielectric constant (high-k) gate dielectric layer and a multiple metal layer on the substrate; forming a first work function metal layer in the first gate trench; performing a first pull back step to remove a portion of the first work function metal layer from the first gate trench; forming a second work function metal layer in the first gate trench and the second gate trench; and performing a second pull back step to remove a portion of the second work function metal layer from the first gate trench and the second gate trench. | 04-17-2014 |
20140199817 | METHOD FOR MANUFACTURING MULTI-GATE TRANSISTOR DEVICE - A method for manufacturing multi-gate transistor device includes providing a semiconductor substrate having a patterned semiconductor layer, a gate dielectric layer and a gate layer sequentially formed thereon, forming a multiple insulating layer sequentially having a first insulating layer and a second insulating layer and covering the patterned semiconductor layer and the gate layer, removing a portion of the multiple insulating layer to simultaneously form a first spacer around the gate layer and a second spacer around the patterned semiconductor layer, removing the second spacer to expose a portion of the first insulating layer covering the patterned semiconductor layer and simultaneously removing a portion of the first spacer to form a third spacer around the gate layer, and removing the exposed first insulating layer to expose the patterned semiconductor layer. | 07-17-2014 |
20140295660 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device is provided. A first interfacial material layer is formed by a deposition process on a substrate. A dummy gate material layer is formed on the first interfacial material layer. The dummy gate material layer and the first interfacial material layer are patterned to form a stacked structure. An interlayer dielectric (ILD) layer is formed to cover the stacked structure. A portion of the ILD layer is removed to expose a top of the stacked structure. The stacked structure is removed to form a trench in the ILD layer. A second interfacial layer and a first high-k layer are conformally foamed at least on a surface of the trench. A composite metal layer is formed to at least fill up the trench. | 10-02-2014 |
20140327055 | REPLACEMENT GATE PROCESS AND DEVICE MANUFACTURED USING THE SAME - A replacement gate process is disclosed. A substrate and a dummy gate structure formed on the substrate is provided, wherein the dummy gate structure comprises a dummy layer on the substrate, a hard mask layer on the dummy layer, spacers at two sides of the dummy layer and the hard mask layer, and a contact etch stop layer (CESL) covering the substrate, the spacers and the hard mask layer. The spacers and the CESL are made of the same material. Then, a top portion of the CESL is removed to expose the hard mask layer. Next, the hard mask layer is removed. Afterward, the dummy layer is removed to form a trench. | 11-06-2014 |
20140361373 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device includes a fin structure, an isolation structure, a gate structure and an epitaxial structure. The fin structure protrudes from the surface of the substrate and includes a top surface and two sidewalls. The isolation structure surrounds the fin structure. The gate structure overlays the top surface and the two sidewalls of a portion of the fin structure, and covers a portion of the isolation structure. The isolation structure under the gate structure has a first top surface and the isolation structure at two sides of the gate structure has a second top surface, wherein the first top surface is higher than the second top surface. The epitaxial layer is disposed at one side of the gate structure and is in direct contact with the fin structure. | 12-11-2014 |
20140363935 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and a gate structure partially overlapping the fin-shaped structure is formed. Subsequently, a dielectric layer is blanketly formed on the substrate, and a part of the dielectric layer is removed to form a first spacer on the fin-shaped structure and a second spacer besides the fin-shaped structure. Furthermore, the second spacer and a part of the fin-shaped structure are removed to form at least a recess at a side of the gate structure, and an epitaxial layer is formed in the recess. | 12-11-2014 |
20150035069 | FINFET AND METHOD FOR FABRICATING THE SAME - A method for fabricating fin-shaped field-effect transistor (FinFET) is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure in the substrate; forming a shallow trench isolation (STI) on the substrate and around the bottom portion of the fin-shaped structure; forming a first gate structure on the STI and the fin-shaped structure; and removing a portion of the STI for exposing the sidewalls of the STI underneath the first gate structure. | 02-05-2015 |
Tai-Hang Fu, Taipei Hsien TW
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20120206106 | Electrical Device and Battery Management Method Thereof - A battery management method of an electrical device, including an internal power source and a battery management unit, includes the following steps. The battery management unit detects whether the electrical device is electrically connected with an external power source. If the electrical device is electrically connected with the external power source, the battery management unit utilizes a timer to determine whether the electrical device has been electrically connected with the external power source for a predetermined time. If the electrical device has been electrically connected with the external power source for the predetermined time, the battery management unit resets the timer and controls the internal power source to discharge fast. | 08-16-2012 |
Taso-Yuan Fu, Luzhu Township TW
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20110273905 | EDGE-LIT BACKLIGHT MODULE - An edge-lit backlight module includes a back plate, a light bar, and a light guide plate. The back plate has a bottom plate and four lateral sides. Each of the lateral sides is perpendicular to the bottom plate and connected to a peripheral edge of the bottom plate. The light bar is disposed on a side of an internal face of one of the lateral sides to leave at least one accommodation space on the lateral side. The light guide plate has at least one extension portion corresponding to the accommodation space. The light guide plate is disposed on the bottom plate, and each extension portion of the light guide plate engages with the corresponding accommodation space for fixing the light guide plate onto the back plate. | 11-10-2011 |
Timonty Tsunfai Fu, Pyrmont AU
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20120152255 | PAP SYSTEM - Systems, devices and methods of use adapted for treatment of respiratory disease or sleep disordered breathing include a patient interface ( | 06-21-2012 |
Timothy Tsun-Fai Fu, Carlingford AU
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20090178679 | Cushion for a respiratory mask assembly - A respiratory mask includes a frame including a breathable gas port, wherein the frame defines an inner chamber to receive at least one of a wearer's nasal region and mouth. The mask includes a cushion including a flange connected to the frame, an inner rim defining an opening to the inner chamber of the frame, and a sealing portion disposed between the flange and the inner rim to contact the wearer's face. The sealing portion includes a nasal seal section to span a wearer's face above the wearer's nares, side seal sections extending from each side of the nasal seal section on both sides of the wearer's mouth, and a chin seal section that extends between the side seal sections. The chin seal section is upwardly curved in an arch to follow the chin's bony contour. | 07-16-2009 |
20090194111 | Elbow for mask system - An elbow for a mask system includes a proximal end adapted to be provided to the mask system, a distal end adapted to be provided to an air delivery conduit, and a baffle provided within the proximal end. The baffle has a generally planar configuration that defines an intake port that directs incoming air from the air delivery conduit into a mask cavity and an exhaust port separated from the intake port that directs exhaust air from the mask cavity to atmosphere. The baffle includes an end portion that is adapted to extend into the mask cavity defined by the mask system. | 08-06-2009 |
20100236559 | Headgear connection assembly for a respiratory mask - A respiratory mask assembly for delivering breathable gas to a patient includes a frame and at least one locking clip. The frame has a main body and a side frame member provided on each lateral side of the main body, at least one of the side frame members including a locking clip receiver assembly. The at least one locking clip has a main body providing a front portion adapted to be removably coupled with the at least one locking clip receiver assembly and a rear portion adapted to be removably coupled to a headgear assembly. The rear portion includes a cross bar that forms an opening through which a strap of the headgear assembly can pass and be removably coupled with the cross bar, and the front portion includes at least one resiliently flexible spring arm that is flexible within the plane of the main body. | 09-23-2010 |
20110030692 | Mask system - A mask system for treating sleep disordered breathing, comprising headgear, a shell/cushion including a channel adjacent a front aperture, a frame, an elbow including at least one undercut on a proximal end, a retaining ring including a rear flange adapted to be retainably insertable in the channel of the shell/cushion, and a front flange adapted to retainably engage with the at least one undercut of the elbow. | 02-10-2011 |
20110056498 | FOREHEAD PAD FOR RESPIRATORY MASK - A forehead pad for use in a respiratory mask with a forehead support, which includes a base portion to contact a user's forehead, a support post connected to the base portion, and a head adapted to connect the support post to a forehead support. A pair of forehead pads may be joined with a connector. | 03-10-2011 |
20110220114 | Cushion for a respiratory mask assembly - A respiratory mask includes a frame including a breathable gas port, wherein the frame defines an inner chamber to receive at least one of a wearer's nasal region and mouth, and a cushion including a flange connected to the frame, an inner rim defining an opening to the inner chamber of the frame, and a sealing portion disposed between the flange and the inner rim to contact the wearer's face. The sealing portion includes a nasal seal section to span a wearer's face above the wearer's nares, side seal sections extending from each side of the nasal seal section on both sides of the wearer's mouth, and a chin seal section that extends between the side seal sections, wherein the chin seal section is upwardly curved in an arch to follow the chin's bony contour. | 09-15-2011 |
20120266887 | DOUBLE-ENDED BLOWER AND VOLUTES THEREFOR - A variable speed blower for Continuous Positive Airway Pressure (CPAP) ventilation of patients includes two impellers in the gas flow path that cooperatively pressurize gas to desired pressure and flow characteristics. Thus, the blower can provide faster pressure response and desired flow characteristics over a narrower range of motor speeds, resulting in greater reliability and less acoustic noise. | 10-25-2012 |
Timothy Tsun-Fai Fu, Pyrmont AU
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20120138058 | SINGLE STAGE, AXIAL SYMMETRIC BLOWER AND PORTABLE VENTILATOR | 06-07-2012 |
20120174928 | MASK ASSEMBLY - A respiratory mask assembly for use in delivery of non-invasive positive airway pressure to a user comprising a rigid mask shell including a plurality of slots; a soft cushion including at least one flexible sealing lip constructed and arranged to extend around an inner periphery of the cushion and to deform to provide a continuous airtight seal between the cushion and the rigid mask shell, the at least one flexible sealing lip being further constructed and arranged to return to a relaxed state when the cushion is disassembled from the rigid mask shell, the soft cushion further including a retaining portion; and a retaining ring configured to engage with the retaining portion of the cushion, and including a plurality of clips each positioned on respective spring arms to engage with each of the respective plurality of slots of the rigid mask shell to retain the cushion in position with the rigid mask shell. | 07-12-2012 |
20130312758 | MASK SYSTEM - A mask system for treating sleep disordered breathing, comprising headgear, a shell/cushion including a channel adjacent a front aperture, a frame, an elbow including at least one undercut on a proximal end, a retaining ring including a rear flange adapted to be retainably insertable in the channel of the shell/cushion, and a front flange adapted to retainably engage with the at least one undercut of the elbow. | 11-28-2013 |
20140020684 | RESPIRATORY BREATHING APPARATUS - A respiratory apparatus comprising a base and removable chamber, wherein the chamber is configured to hold a supply of water and include a blower arrangement adapted to provide a supply of pressurized air or gas to the supply of water. In certain embodiments the respiratory apparatus includes a split motor, wherein the stationary components are located within a base and the rotating portions are located within a chamber. | 01-23-2014 |
20140041663 | MULTIPLE STAGE BLOWERS AND VOLUTES THEREFOR - A multiple stage variable speed blower for Continuous Positive Airway Pressure (CPAP) ventilation of patients includes two impellers in the gas flow path that cooperatively pressurize gas to desired pressure and flow characteristics. Thus, the multiple stage blower can provide faster pressure response and desired flow characteristics over a narrower range of motor speeds, resulting in greater reliability and less acoustic noise. | 02-13-2014 |
Tsu-Ju Fu, Hukou Township TW
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20110300534 | COMPOSITIONS AND METHODS FOR SEQUENCING NUCLEIC ACIDS - Embodiments relate to methods of sequencing nucleic acids. Embodiments encompass the use of nucleotide analogs and a nucleic acid polymerase enzyme or enzyme complex comprising proofreading activity. The nucleotide analogs may become incorporated into a replicating strand and induce the proofreading activity of the polymerizing enzyme, thereby prolonging the duration of a signal associated with nucleotide incorporation, resulting in more observable sequencing events and increasing the accuracy of nucleic acid sequencing. | 12-08-2011 |
Tzu-Fun Fu, Tainan City TW
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20120208220 | METHOD AND KIT FOR DETECTING FOLTATE - A method and a kit for detecting folate are disclosed. The method includes the following steps: (a) mixing a sample and an extraction buffer to form a mixture, heating and then cooling the mixture, and separating a supernatant from the mixture by centrifugation; (b) adding a recombinant γ-glutamyl hydrolase (GGH) and a folate conversion enzyme to the supernatant to drive catalysis; (c) stopping the catalysis; and (d) analyzing the supernatant by high performance liquid chromatography. | 08-16-2012 |
20130283403 | ZEBRAFISH SEIZURE MODEL, METHOD FOR ESTABLISHING THE SAME, AND METHOD FOR SCREENING ANTIEPILEPTIC DRUG USING THE SAME - A zebrafish seizure model, a method for establishing the same, and a method for screening for antiepileptic drug using the same are disclosed. The method for establishing the zebrafish seizure model comprises the following steps: placing a zebrafish in a medium containing an inducing compound represented by the following formula (I) to induce seizure-like symptom in zebrafish: | 10-24-2013 |
Tzung-Chi Fu, Miaoli City TW
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20110267593 | METHOD AND APPARATUS FOR MAINTAINING DEPTH OF FOCUS - A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference. | 11-03-2011 |
20130314708 | Method and Apparatus for Maintaining Depth of Focus - A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference. | 11-28-2013 |
20140061655 | METHOD FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT - The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate. | 03-06-2014 |
Tzung-Chi Fu, Maioli City TW
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20120045192 | SYSTEM AND METHOD FOR IMPROVING IMMERSION SCANNER OVERLAY PERFORMANCE - System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner comprising a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method comprises providing a water tank at at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level. | 02-23-2012 |
Wai Yam Fu, Hunghom HK
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20110312432 | DESKTOP BOWLING GAME - A desktop bowling game is provided including bowling pins having metal that is attractable by magnets located at a base of each bowling pin, a ball, a main unit having a playing board having a surface with position markers for setup of the pins, and a pin reset mechanism, located below the playing board. The pin reset mechanism includes a sliding plate that slides up and down beneath the playing board between a first, up position immediately below and adjacent to the playing board to a second, down position away from the playing board. Magnets are disposed on the sliding plate adjacent to the playing board and adjacent to the position markers of the playing board. | 12-22-2011 |
Wei-Chen Fu, Xinfeng Township TW
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20120056559 | INTEGRATED CIRCUIT FOR DRIVING HIGH-VOLTAGE LED LAMP - An integrated circuit for driving high-voltage LED lamps is applied to a rectified alternative current (AC) power and a plurality of LED stacks. The integrated circuit includes a control unit, a plurality of current-clamping units which electrically connect to the control unit and the LED stacks respectively, and a plurality of current-sensing units which electrically connect to the current-clamping units and the control unit. When the rectified power is switched on, the current-sensing unit constantly monitors the electrical current flowing through the respective current-clamping unit and feeds back the monitored data to the control unit. The control unit sequentially switches on or off the current-clamping units according to the combinatorial logic state of the monitored data. | 03-08-2012 |
Wei-Cheng Fu, Yingge Township TW
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20120074094 | Manufacturing Method for Forming Circuit Structure on Non-Conductive Carrier - A manufacturing method of forming an electrical circuit on a non-conductive carrier comprises following steps. After providing an electrically non-conductive carrier, catalysts are dispersed on or in the electrically non-conductive carrier. A predetermined track structure is formed on the electrically non-conductive carrier to expose the catalysts on the surface of the predetermined track structure. The surface of the predetermined track structure containing the catalysts is metalized to form a conductor track. | 03-29-2012 |
Wei-Cheng Fu, Guishan Township TW
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20120134631 | Molded Interconnect Device (MID) with Thermal Conductive Property and Method for Production Thereof - A molded interconnect device (MID) with a thermal conductive property and a method for production thereof are disclosed. A thermal conductive element is set in a support element to improve the thermal conductivity of the support element, and the support element is a non-conductive support or a metallizable support. A metallization layer is formed on a surface of the support element. If a heat source is set on the metallization layer, heat produced by the heat source will pass out from the metallization layer or the support element with the thermal conductivity material element. | 05-31-2012 |
Weinong Fu, Hong Kong HK
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20120212085 | AXIAL-FLUX ELECTRIC MACHINE - An axial-flux electric motor includes a stator having a plurality of stator windings and a plurality of stator pole-pairs, a first rotor configured to magnetically interact with the stator in an axial direction, the first rotor is positioned on one side of the stator, having a plurality of permanent magnets embedded thereon with a plurality of rotor pole-pairs, a second rotor configured to magnetically interact with the stator in the axial direction, the second rotor is position on another side of the stator, having a plurality of permanent magnets embedded thereon with a plurality of rotor pole-pairs, and a plurality of stationary ferromagnetic segments, positioned between the stator and the first rotor and between the stator and the second rotor, the ferromagnetic segments are adapted to modulate magnetic field of the permanent magnets in the axial direction. | 08-23-2012 |
Wen Tian Fu, Oegstgeest NL
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20080221328 | LUMINESCENT LANTHANIDE COMPLEXES - Neutral lanthanide(III) complexes including at least one ligand are disclosed. The ligand includes a heterocyclic aromatic ring with at least one carboxylic acid group attached thereto, wherein a heteroatom of the heterocyclic ring and the carboxylate function of the carboxylic acid group co-ordinate (chelate) to the lanthanide. The complexes can be used in luminescent lamps and luminescent displays. The complexes can be synthesized by heating a mixture of a lanthanide 3+ salt and ligand L in a suitable solvent until a precipitate of the lanthanide complex forms. In one embodiment, the formal 3+ charge on the lanthanide is neutralized by providing in the ligands for the complex, three coordinating carboxylate groups, (RCO | 09-11-2008 |
Xiaoming Fu, Goettingen DE
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20120120801 | NETWORK-FRIENDLY TRANSMISSION CONTROL PROTOCOL (TCP) METHODS, APPARATUS AND ARTICLES OF MANUFACTURE - Example methods, apparatus and articles of manufacture to route policy requests are disclosed. A disclosed example method includes sending bandwidth probe packets at a probing rate, receiving a packet containing an indication representative of whether the probe packets triggered congestion, and selecting a transmission rate for sending data packets based on the probing rate and the indication. | 05-17-2012 |
Xiaoyi Fu, Epping AU
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20120174922 | RESPIRATOR - A breathing apparatus, including a mask and a neck component. The mask is adapted to substantially surround at least the mouth or nostrils of a user. The neck component is attached to said mask, and adapted to substantially surround the back of the neck of said user. The neck component includes a flow generator to receive unfiltered air from a surrounding environment, filter said unfiltered air, and, provide filtered air to said mask. The breathing apparatus has a ‘low profile’ appearance and is adapted to sit comfortably about the neck of the user. | 07-12-2012 |
Yao Fu, Balmain AU
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20090078675 | METHOD OF REMOVING PHOTORESIST - A method of photoresist removal is provided. The method employs a plasma formed from a gas chemistry comprising NH | 03-26-2009 |
20110049091 | METHOD OF REMOVING PHOTORESIST AND ETCH-RESIDUES FROM VIAS - A method of photoresist removal with concomitant de-veiling is provided. The method employs a plasma formed from a gas chemistry comprising O | 03-03-2011 |
Yi-Huan Fu, Taoyuan TW
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20110309345 | COMPOUND FOR ORGANIC ELECTROLUMINESCENT DEVICE AND ORGANIC ELECTROLUMINESCENT DEVICE HAVING THE SAME - The present invention provides a compound of formula (I) for an organic electroluminescent device: | 12-22-2011 |
20130048956 | COMPOUND FOR ELECTROLUMINESCENT DEVICE AND ORGANIC ELECTROLUMINESCENT DEVICES USING THE SAME - The present invention provides a compound of formula (I) for an organic electroluminescent device: | 02-28-2013 |
Yi-Keng Fu, Hsinchu County TW
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20110254044 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING A LIGHT EMITTING DEVICE - A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 μm. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate. | 10-20-2011 |
20130112987 | LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF - A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h μm and the distribution density of the protuberance on the second surface is d cm | 05-09-2013 |
20130228741 | LIGHT EMITTING DIODE - A light emitting diode including a sapphire substrate, a n-type semiconductor layer, an active layer, a p-type semiconductor layer, a first and a second electrode is provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×10 | 09-05-2013 |
20130228743 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The active layer is located between the n-type and p-type semiconductor layers, and includes multiple quantum barrier layers and quantum wells located between any two quantum barrier layers. A lattice constant of the quantum barrier layer closest to the p-type semiconductor layer is a | 09-05-2013 |
20130270515 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electrode, and a second electrode. The n-type semiconductor layer is located between the substrate and the p-type semiconductor layer. The active layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is located between any two quantum barrier layers, and i is an integer greater than or equal to 2. The thickness of each of the quantum barrier layers counting from the p-type semiconductor layer is T | 10-17-2013 |
20140097442 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The first buffer layer is disposed on the nucleation layer. The first buffer layer includes a dopant and Gallium, and an atomic radius of the dopant is larger than an atomic radius of Gallium. The first type nitride semiconductor layer is disposed over the first buffer layer. The light-emitting layer is disposed on the first type nitride semiconductor layer. The second type nitride semiconductor layer is disposed on the light-emitting layer. | 04-10-2014 |
20140097443 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor stacked layer, a light-emitting layer and a second type nitride semiconductor layer. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer. The first type nitride semiconductor stacked layer is disposed on the buffer layer. The first type nitride semiconductor stacked layer being a plurality of lattice mismatch stacked layers includes a plurality of first nitride semiconductor layers and a plurality of second nitride semiconductor layers. The first nitride semiconductor layers and the second nitride semiconductor layers are stacked alternately, and the first nitride semiconductor layers and the second nitride semiconductor layers are different material. The light-emitting layer is disposed on the first type nitride semiconductor stacked layer. The second type nitride semiconductor layer is disposed on the light-emitting layer. | 04-10-2014 |
20140097444 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer. The first type nitride semiconductor layer is disposed on the buffer layer. The first type nitride semiconductor layer is doped with a first type dopant, at least one of the buffer layer and the first type nitride semiconductor layer comprises a codopant distributed therein, and an atomic radius of the codopant is larger than an atomic radius of the first type dopant. The light-emitting layer is disposed on the first type nitride semiconductor layer. The second type nitride semiconductor layer is disposed on the light-emitting layer, the second type nitride semiconductor layer comprising a second type dopant. | 04-10-2014 |
20140124833 | NITRIDE SEMICONDUCTOR STRUCTURE - A nitride semiconductor structure including a silicon substrate, a nucleation layer, a discontinuous defect blocking layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate, wherein the nucleation layer has a defect density d | 05-08-2014 |
20140131732 | LIGHT EMITTING DIODE - A light emitting diode device may include a carrier, a p-type and n-type semiconductor layers, an active layer, a first electrode and a second electrode is provided. The carrier has a growth surface and at least one nano-patterned structure on the growth surface, in which the carrier includes a substrate and a semiconductor capping layer disposed between the substrate and the n-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are located over the growth surface of the carrier. The active layer is located between the n-type and p-type semiconductor layers, in which a wavelength λ of light emitted by the active layer is 222 nm≦λ≦405 nm, and a defect density of the active layer is less than or equal to 5×10 | 05-15-2014 |
20140231747 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×10 | 08-21-2014 |
20150069321 | LIGHT EMITTING DIODE - A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element—may have a peak from 3E | 03-12-2015 |
20150083990 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, a first and second electrodes is provided. The active layer is located between the n-type and p-type semiconductor layers, and includes i quantum wells and (i+1) quantum barrier layers, each quantum well is located between any two of the quantum barrier layers, each of k quantum wells among the i quantum wells is constituted of a light emitting layer and an auxiliary layer, in which an indium concentration of the auxiliary layer is greater than an indium concentration of the light emitting layer, where i and k are natural numbers greater than or equal to 1 and k≦i. The first electrode and second electrodes are located on the n-type semiconductor layer and the p-type semiconductor layer, respectively. | 03-26-2015 |
Yi Liang Fu, Singapore SG
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20100051324 | DIELECTRIC SUBSTRATE WITH HOLES AND METHOD OF MANUFACTURE - An aspect of the present invention comprises a method of forming holes in a dielectric substrate comprising the steps of applying a layer of photoresist to a dielectric substrate, exposing portions of the photoresist to actinic radiation through a photomask to form a pattern in the photoresist for an array of holes to be etched in the substrate, developing the photoresist, etching the dielectric substrate to form an array of holes, each hole extending at least partially through the dielectric substrate, and removing the excess photoresist. Another aspect of the present invention is a method of simultaneously forming holes in a dielectric substrate some of which extend partially through the substrate and some of which extend completely through the substrate. Other aspects of the present invention are dielectric substrates formed using the methods of the invention. | 03-04-2010 |
Ying Fu, Stuttgart DE
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20120024510 | HEAT EXCHANGER, IN PARTICULAR A HEATING ELEMENT FOR MOTOR VEHICLES - A heat exchanger, in particular a heating element for motor vehicles, is provided that includes a block that has flat tubes and corrugated fins and a collecting tank on the inlet side and on the outlet side, wherein the flat tubes comprise flat sides having embossed vortex generators, and a coolant can flow through the flat tubes. The flat tubes can have an inner diameter in the range of 0.9 to 1.2 mm, preferably of 1.0 mm, and the corrugated fins can have a height in the range of 6.3 to 8.0 mm, preferably of 8.3 mm. | 02-02-2012 |
Yiton Fu, Sharnbrook GB
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20100219267 | SPRAY NOZZLE - The invention relates to a nozzle for producing a spray, a method for their manufacture and a dispenser incorporating the inventive nozzle. It is contemplated that the inventive nozzle is used in dispensers for deodorant sprays. | 09-02-2010 |
Yongqi Fu, Singapore SG
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20090261250 | PLASMONIC STRUCTURE LENS AND ITS APPLICATION FOR ONLINE INSPECTION - A surface plasmonic polariton lens is disclosed that has an optical plate having incident thereupon waves of electromagnetic radiation. The plate also has a thin metal film of a metal having a negative permittivity. There are slits in the thin film, the slits being of decreasing radial width, and decreasing radial separation at increasing radius and being for the transmission therethrough of diffracted waves of the electromagnetic radiation. There are rings between the slits, the rings being of decreasing radial width at increasing radius and being for the transmission therethrough of evanescent waves of the electromagnetic radiation. The diffracted waves and the evanescent waves form propagated waves. A probe with such a lens, and an inspection apparatus and method using the probe are also disclosed. | 10-22-2009 |
Yu-Bang Fu, Guishan Township TW
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20120257359 | Circuit Layout of Image Capturing Device - A circuit layout of an image capturing device comprises a circuit board, an image capturing circuit, a flashlight circuit and a groove. The circuit board is a multilayered structure. The image capturing circuit is built on the circuit board. The flashlight circuit is built on the circuit board. The groove is formed on the multilayered structure of the circuit board and divides the circuit board into two areas where the image capturing circuit and the flashlight circuit are respectively disposed. The image capturing circuit is located at a first area, and the flash circuit is located at a second area. Therefore, the groove can prevent the interference between the image capturing circuit and the flashlight circuit. | 10-11-2012 |
20120261180 | Circuit Board - A circuit board is capable of reduce the effect of bowing. The circuit board comprises a substrate, a plurality of first vias, a plurality of second vias, and a plurality of first blocks. The substrate comprises a conductive layer outside the first blocks. The first vias pass through the substrate and the conductive layer. The first blocks would comprise the second vias, which passes through the substrate. The first vias and the first blocks can be individually or jointly disposed in a central area of the substrate, around a fastening hole, or around a circuit component. The fastening hole can be connected to at least one of the second vias by a conducting wire when the first block with the second vias is disposed around the fastening hole. | 10-18-2012 |
Yung-Yu Fu, Kaohsiung TW
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20110250811 | MULTI-LAYERED MATERIAL AND A METHOD FOR MAKING THE SAME - A multi-layered material and a method for making the same are provided. The multi-layered material includes a first foamed layer, a substrate, a second foamed layer, and a surface layer. The first foamed layer has a plurality of first cells. The substrate is a fabric. The second foamed layer has a plurality of second cells. The foaming method of the second foamed layer is different from that of the first foamed layer. The size of the second cells is different from that of the first cells. The variation in size of the second cells is different from that of the first cells. The surface layer is disposed on the second foamed layer. Thus, when the multi-layered material is used as a surface cover of a ball, it can provide excellent resilience and control, and improve manufacturing efficiency. | 10-13-2011 |
20120021662 | LAMINATED MATERIAL AND METHOD FOR MAKING THE SAME - The present invention relates to a laminated material and a method for making the same. The laminated material includes a main layer, a surface layer and an adhesion layer. The main layer at least includes a first polymer resin. The surface layer is disposed on the main layer, the material of the surface layer is a second polymer resin, and the solid content of the second polymer resin is less than that of the first polymer resin. The adhesion layer is disposed under the main layer, and the material of the adhesion layer is thermoplastic resin which is adhesive when being heated, so that the laminated material can be directly attached to another element, thereby simplifying the process and reducing cost. | 01-26-2012 |
Zhengjia Fu, Hong Kong HK
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20120030367 | System And Method For Evaluating Network Transport Effects On Delivery Of Media Content - A system and a method for evaluating transport of data segments of media content bitstream over a peer-to-peer network by streaming data chunks of a media content through a peer-to-peer network, generating network transport distortion on the data chunks using live experiments, simulation, or artificial generation, determining a playback strategy of each of the data segment at the receiver end, and evaluating a playback performance of the media content bitstream under the playback strategy. | 02-02-2012 |