| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438799000 | By differential heating | 33 |
| 20080242118 | METHODS FOR FORMING DENSE DIELECTRIC LAYER OVER POROUS DIELECTRICS - Methods for forming a dense dielectric layer over the surface of an opening in a porous inter-layer dielectric having an ultra-low dielectric constant are disclosed. The disclosure provides methods for exposing the sidewall surface and the bottom surface of the opening to a plurality of substantially parallel ultra-violet (UV) radiation rays to form a dense dielectric layer having a substantially uniform thickness over both the sidewall surface and the bottom surface. | 10-02-2008 |
| 20080248657 | Method and system for thermally processing a plurality of wafer-shaped objects - Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration. | 10-09-2008 |
| 20080299784 | APPARATUS AND METHOD FOR THERMALLY TREATING SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING WAFER FROM WARPING - A thermal treatment apparatus and method for processing a wafer are provided. The thermal treatment apparatus includes a process chamber for thermally treating the wafer, a heating unit for heating the wafer in the process chamber, and a gas supply unit for supplying a gas and controlling a gas pressure differently by sections of the wafer. The heating unit is provided in at least one of the upper side and the lower side of the process chamber. The heating unit includes a plurality of heater blocks capable of controlling a temperature for sections of the wafer. | 12-04-2008 |
| 20090197428 | IMPURITY-ACTIVATING THERMAL PROCESS METHOD AND THERMAL PROCESS APPARATUS - An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at least one iteration of millisecond annealing at a temperature higher than the predetermined temperature is performed during the holding period of the spike RTA process. | 08-06-2009 |
| 20100068898 | MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES - A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps. | 03-18-2010 |
| 20100233888 | Method And System For Providing A Continuous Motion Sequential Lateral Solidification For Reducing Or Eliminating Artifacts In Edge Regions, And A Mask For Facilitating Such Artifact Reduction/Elimination - An arrangement, process and mask for implementing single-scan continuous motion sequential lateral solidification of a thin film provided on a sample such that artifacts formed at the edges of the beamlets irradiating the thin film are significantly reduced. According to this invention, the edge areas of the previously irradiated and resolidified areas which likely have artifacts provided therein are overlapped by the subsequent beamlets. In this manner, the edge areas of the previously resolidified irradiated areas and artifacts therein are completely melted throughout their thickness. At least the subsequent beamlets are shaped such that the grains of the previously irradiated and resolidified areas which border the edge areas melted by the subsequent beamlets grow into these resolidifying edges areas so as to substantially reduce or eliminate the artifacts. | 09-16-2010 |
| 20100240227 | ACTIVATING DOPANTS USING MULTIPLE CONSECUTIVE MILLISECOND-RANGE ANNEALS - A method of fabricating an integrated circuit includes providing a gate conductor spaced above a semiconductor substrate by a gate dielectric, a pair of dielectric spacers disposed on sidewall surfaces of the gate conductor, and source and drain regions disposed in the substrate on opposite sides of the dielectric spacers, wherein the gate conductor and the source and drain regions comprise dopants; and subjecting at least a portion of the dopants to at least 3 consecutive anneal exposures to activate the dopants, wherein a duration of each exposure is about 200 microseconds to about 5 milliseconds. | 09-23-2010 |
| 20110059622 | SEMICONDUCTOR MANUFACTURING PROCESS - A semiconductor manufacturing process is provided. First, a wafer with a material layer and an exposed photoresist layer formed thereon is provided, wherein the wafer has a center area and an edge area. Thereafter, the property of the exposed photoresist layer is varied, so as to make a critical dimension of the exposed photoresist layer in the center area different from that of the same in the edge area. After the edge property of the exposed photoresist layer is varied, an etching process is performed to the wafer by using the exposed photoresist layer as a mask, so as to make a patterned material layer having a uniform critical dimension formed on the wafer. | 03-10-2011 |
| 20120178269 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - One embodiment of the present invention provides a semiconductor device manufacturing method, including: performing a laser spike annealing, by irradiating light, whose wavelength is 10 μm to 11 μm, onto a semiconductor substrate including: an active area; a circuit pattern; and a dummy pattern formed at a position, whose distance from an end of the active area is equal to or more than 10 μm and equal to or less than 11 μm, at a pitch equal to or more than 10 nm and equal to or less than 510 nm, while setting an angle formed between an arrangement direction of the dummy pattern and a projection direction of the light to be equal to or more than 0° and equal to or less than 30°. | 07-12-2012 |
| 20120184113 | METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A step of preparing a stack is performed to position each single-crystal substrate in a first single-crystal substrate group and a first base substrate face to face with each other, position each single-crystal substrate in a second single-crystal substrate group and a second base substrate face to face with each other, and stack the first single-crystal substrate group, the first base substrate, an insertion portion, the second single-crystal substrate group, and the second base substrate in one direction in this order. Next, the stack is heated so as to allow a temperature of the stack to reach a temperature at which silicon carbide can sublime and so as to form a temperature gradient in the stack with the temperature thereof getting increased in the above-described direction. In this way, silicon carbide substrates can be manufactured efficiently. | 07-19-2012 |
| 20120190216 | ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE FABRICATION - A semiconductor structure is provided. In some cases, an absorber having a low deposition temperature is applied to at least a portion of the structure. At least a portion of the structure is subjected to a long flash anneal process. | 07-26-2012 |
| 20120208377 | RAPID THERMAL PROCESSING USING ENERGY TRANSFER LAYERS - A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described. | 08-16-2012 |
| 20120214319 | METHOD OF IMPROVING THE PASSIVATION EFFECT OF FILMS ON A SUBSTRATE - A film deposited on substrate may originally has a high surface recombination velocity (SRV). In order to suppress the SRV and increase the minority carrier lifetime, the substrate may be treated annealing at a high temperature in gas ambient containing O | 08-23-2012 |
| 20120244725 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT - First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities. | 09-27-2012 |
| 20130029499 | METHODS OF THERMALLY PROCESSING A SUBSTRATE - The present invention generally relates to methods for thermally processing substrates. In one embodiment, a substrate having an amorphous thin film thereon is subjected to a first pulse of electromagnetic energy having a first fluence insufficient to complete thermal processing. After a predetermined amount of time, the substrate is then subjected to a second pulse of electromagnetic energy having a second fluence greater than the first fluence. The second fluence is generally sufficient to complete the thermal processing. Exposing the substrate to the lower fluence first pulse before the second pulse reduces damage to a thin film disposed on the substrate. In another embodiment, a substrate is exposed to a plurality of electromagnetic energy pulses. The plurality of electromagnetic energy pulses are spaced at increasing intervals to reduce the rate of recrystallization of a film on the substrate, thus increasing the size of the crystals formed during the recrystallization. | 01-31-2013 |
| 20130078823 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device including: mounting a substrate on a substrate mounting member that is disposed in a reaction container; heating the substrate at a predetermined processing temperature and supplying a first gas and a second gas to the substrate to process the substrate; stopping supply of the first gas and the second gas, and supplying an inert gas into the reaction container; and unloading the substrate to outside the reaction container. | 03-28-2013 |
| 20130143417 | CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS - A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material. | 06-06-2013 |
| 20130143418 | RAPID THERMAL ANNEALING TO REDUCE PATTERN EFFECT - A method of performing rapid thermal annealing on a substrate including heating the substrate to a first temperature in a rapid thermal annealing system having a front-side heating source and a backside heating source. The method further includes raising the temperature of the substrate from the first temperature to a second temperature greater than the first temperature. The backside heating source provides a greater amount of heat than the front-side heating source during the raising of the temperature of the substrate. | 06-06-2013 |
| 20130280925 | OXIDATION ANNEALING DEVICE AND METHOD FOR FABRICATING THIN FILM TRANSISTOR USING OXIDATION ANNEALING - A far-infrared plane heater | 10-24-2013 |
| 20130330938 | ROTATABLE AND TUNABLE HEATERS FOR SEMICONDUCTOR FURNACE - A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers. | 12-12-2013 |
| 20140162467 | HEAT TREATMENT APPARATUS EMITTING FLASH OF LIGHT - Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking. | 06-12-2014 |
| 20140357093 | PROCESS FOR STABILIZING A BONDING INTERFACE, LOCATED WITHIN A STRUCTURE WHICH COMPRISES AN OXIDE LAYER AND STRUCTURE OBTAINED - The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface. | 12-04-2014 |
| 20150037984 | Laser Annealing Apparatus and Laser Annealing Method - A laser annealing apparatus includes: a laser beam generator for providing a stable single-pulse laser; a cyclic delay unit ( | 02-05-2015 |
| 20150056823 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A display device is manufactured by forming a semiconductor film over a substrate and irradiating the film with laser light. The laser light is generated from an oscillator, passes through an attenuator that includes a filter, and passes through an optical system after passing through the attenuator. A first region of the semiconductor film is irradiated with the laser light passed through the optical system such that one point of the first region of the semiconductor film is irradiated with at least two shots. A second region of the semiconductor film is also irradiated with the laser light passed through the optical system such that one point of the second region of the semiconductor film is irradiated with at least two shots. The first region and the second region have a portion at which they overlap, and the semiconductor film is etched into semiconductor layers for transistors in areas outside the portion. | 02-26-2015 |
| 20150311078 | BEAM SHAPERS, ANNEALING SYSTEMS EMPLOYING THE SAME, METHODS OF HEAT TREATING SUBSTRATES AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES - A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof. | 10-29-2015 |
| 20150318175 | LASER ANNEALING DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - A laser annealing device of the present invention includes a stage on which a heating object is placed, a first laser element which emits first continuous laser light, a first optical system which leads the first continuous laser light to the heating object to form a first application region on the heating object, a second laser element which emits second continuous laser light having a wavelength shorter than that of the first continuous laser light, a second optical system which leads the second continuous laser light to the heating object to form a second application region on the heating object, and a system controller which executes scanning with the first application region and the second application region so that each portion of the heating object is scanned with at least part of the first application region before being scanned with the second application region. | 11-05-2015 |
| 20150332923 | LASER ANNEALING APPARATUS AND LASER ANNEALING METHOD - The present invention provides an efficient heat treatment such as activation treatment of impurities on a substrate such as a thick silicon wafer with large heat capacity by laser annealing. | 11-19-2015 |
| 20160013057 | PROCESS AND SYSTEM FOR UNIFORMLY CRYSTALLIZING AMORPHOUS SILICON SUBSTRATE BY FIBER LASER | 01-14-2016 |
| 20160020117 | SCANNED PULSE ANNEAL APPARATUS AND METHODS - Apparatus, system, and method for thermally treating a substrate. A source of pulsed electromagnetic energy can produce pulses at a rate of at least 100 Hz. A movable substrate support can move a substrate relative to the pulses of electromagnetic energy. An optical system can be disposed between the energy source and the movable substrate support, and can include components to shape the pulses of electromagnetic energy toward a rectangular profile. A controller can command the source of electromagnetic energy to produce pulses of energy at a selected pulse rate. The controller can also command the movable substrate support to scan in a direction parallel to a selected edge of the rectangular profile at a selected speed such that every point along a line parallel to the selected edge receives a predetermined number of pulses of electromagnetic energy. | 01-21-2016 |
| 20160079065 | LASER ANNEALING DEVICE AND METHOD - A laser annealing device for compensating wafer heat maps and its method are disclosed. A laser annealing device comprises a pump laser source array including of a plurality of pump laser sources for irradiating a tunable mask, each pump laser source emitting pump laser, an annealing laser source for emitting annealing laser and irradiating the tunable mask, and a tunable mask for transmitting at least part of the annealing laser after being irradiated by the pump laser. | 03-17-2016 |
| 20160104617 | EXCIMER LASER ANNEALING APPARATUS AND METHOD OF USING THE SAME - An excimer laser annealing apparatus and the method thereof are disclosed. The apparatus has a substrate holder and an excimer laser unit. The substrate holder has a support surface for supporting a substrate having an amorphous silicon film and a thermoregulating module. The thermoregulating module is used to regulate the temperature on the support surface so as to control crystal orientation of amorphous silicon in the amorphous silicon film. With the thermoregulating module being added, the excimer laser annealing apparatus can control the orientation of recrystallizing of the amorphous silicon. | 04-14-2016 |
| 20160155638 | CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS | 06-02-2016 |
| 20160181132 | Apparatus For Improving Temperature Uniformity Of A Workpiece | 06-23-2016 |
