| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438767000 | Compound semiconductor substrate | 8 |
| 20100144161 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS - A semiconductor device manufacturing method and a substrate processing apparatus are provided to reduce contaminants generating due to striping of an oxide film formed on a silicon carbide member. The manufacturing method includes: loading a substrate into a silicon carbide reaction tube; forming an oxide film on the substrate by supplying oxidizing gas into the reaction tube and causing thermal oxidation; unloading the processed substrate from the reaction tube; and in a state where the processed substrate is unloaded from the reaction tube, after increasing an inside temperature of the reaction tube until temperature of an oxide film formed on an inner wall of the reaction tube through the thermal oxidation is increased to at least a temperature corresponding to a strain point of the oxide film, decreasing the inside temperature of the reaction tube to below a temperature at which the processed substrate is unloaded from the reaction tube. | 06-10-2010 |
| 20100216316 | TRANSFER OF HIGH TEMPERATURE WAFERS - This invention provides apparatus, protocols, and methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a device for moving wafers or substrates that can bath a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency. | 08-26-2010 |
| 20120164843 | TRANSFER OF HIGH TEMPERATURE WAFERS - This invention provides methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a method for moving wafers or substrates that can bathe a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency. | 06-28-2012 |
| 20130078819 | METHOD FOR CLEANING & PASSIVATING GALLIUM ARSENIDE SURFACE AUTOLOGOUS OXIDE AND DEPOSITING AL2O3 DIELECTRIC - The present invention belongs to the technical field of semiconductor materials and specifically relates to a method for cleaning & passivizing gallium arsenide (GaAs) surface autologous oxide and depositing an Al | 03-28-2013 |
| 20140273517 | NH3 CONTAINING PLASMA NITRIDATION OF A LAYER OF A THREE DIMENSIONAL STRUCTURE ON A SUBSTRATE - Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a first temperature; and exposing the first layer to an RF plasma formed from a process gas comprising ammonia (NH | 09-18-2014 |
| 20160020091 | Carbon and/or Nitrogen Incorporation in Silicon Based Films Using Silicon Precursors With Organic Co-Reactants by PE-ALD - Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma. | 01-21-2016 |
| 20160027640 | HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC OXIDE - A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations. | 01-28-2016 |
| 20160049295 | METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE - A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET. | 02-18-2016 |
