| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438754000 | Electrically conductive material (e.g., metal, conductive oxide, etc.) | 31 |
| 20080280452 | Method for stripping photoresist - Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O | 11-13-2008 |
| 20090042401 | COMPOSITIONS AND METHODS FOR SUBSTANTIALLY EQUALIZING RATES AT WHICH MATERIAL IS REMOVED OVER AN AREA OF A STRUCTURE OR FILM THAT INCLUDES RECESSES OR CREVICES - Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, higher material removal rates at the corners than at smoother areas of the structure or film from which material is removed. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed. | 02-12-2009 |
| 20090068846 | COMPOSITIONS AND METHOD FOR TREATING A COPPER SURFACE - The present invention is directed to compositions for copper passivation and methods of use of such compositions. | 03-12-2009 |
| 20090068847 | METHODS FOR REMOVING CONTAMINANTS FROM ALUMINUM-COMPRISING BOND PADS AND INTEGRATED CIRCUITS THEREFROM - Methods for removing contaminants from a semiconductor device that includes a plurality of aluminum-comprising bond pads on a semiconductor surface of a substrate. A plurality of aluminum-including bond pads are formed on the semiconductor surface of the substrate. A patterned passivation layer is then formed on the semiconductor surface, wherein the patterned passivation layer provides an exposed area for the plurality of bond pads. Wet etching with a basic etch solution is used to etch a surface of the exposed area of the aluminum-including bond pads, wherein the wet etching removes at least 100 Angstroms from the surface of the bond pads to form a cleaned surface. | 03-12-2009 |
| 20090111277 | WET PHOTORESIST STRIP FOR WAFER BUMPING WITH OZONATED ACETIC ANHYDRIDE - Methods for stripping a photoresist from a substrate and for fabricating wafer bumps are provided herein. In some embodiments, a method of stripping a photoresist from a substrate includes providing a substrate having a patterned photoresist deposited thereon; and stripping the photoresist from the substrate using a stripping solution comprising ozone in a solvent, wherein the solvent comprises acetic anhydride. In some embodiments, a method of stripping a photoresist from a wafer in a wafer bump formation process includes forming a plurality of wafer bumps on a wafer through a patterned photoresist layer; and stripping the photoresist layer using a stripping solution comprising ozone in a solvent, wherein the solvent comprises acetic anhydride. | 04-30-2009 |
| 20090124090 | CONDUCTIVE POLYMER ELECTRODES - A known method of forming organic semiconductor devices employs the deposition of a conductive polymer onto a substrate to form electrodes or conductive tracks and then to apply an electrical material such as an organic semiconductor on top of these tracks. Although the conductive polymer serves as a highly efficient injector of electrons into the semiconductor, it is not a good conductor. This introduces undesirable inefficient in the supply of current to and from the semiconductor. Worse still the conductivity may deteriorate with time. A solution to this problem has been found by printing the polymer ( | 05-14-2009 |
| 20090124091 | ETCHING SOLUTION COMPOSITION FOR METAL FILMS - The present invention aims to provide an etching solution composition which enables to etch a metal film in a controllable manner, form a desired definite tapered shape, and obtain a smooth surface without causing etching solution exudation trace. Said problems have been solved by the present invention, which is an etching solution composition for etching metal films containing one or more surfactants selected from the group consisting of alkyl sulfate or perfluoroalkenyl phenyl ether sulfonic acid and the salts thereof. | 05-14-2009 |
| 20090221152 | Etching Solution And Method For Structuring A UBM Layer System - Etching solution for etching a layer system that has at least one layer of aluminum, at least one layer of copper and at least one third layer, selected from nickel vanadium, nickel and alloys thereof, which is arranged between the at least one aluminum layer and the at least one copper layer, wherein the solution contains phosphoric acid, nitric acid, deionized water and at least one salt that can release halogen ions, or comprises these components. The claimed etching solution is the basis for a one-step structuring method of a UBM layer system which is used in the production of components that are produced by semiconductor technology methods. | 09-03-2009 |
| 20100035435 | Composition and Method for Improved Adhesion of Polymeric Materials to Copper or Copper Alloy Surfaces - The present invention relates to a method for treating copper or copper alloy surfaces for tight bonding to polymeric substrates, for example solder masks found in multilayer printed circuit boards. The substrate generally is a semiconductor-device, a lead frame or a printed circuit board. | 02-11-2010 |
| 20100068890 | PRINTABLE MEDIUM FOR ETCHING OXIDIC, TRANSPARENT AND CONDUCTIVE LAYERS - The present invention relates to novel printable etching media having improved properties for use in the process for the production of solar cells. These are corresponding particle-containing compositions by means of which extremely fine lines and structures can be etched very selectively without damaging or attacking adjacent areas. | 03-18-2010 |
| 20100087066 | Selective Chemical Etch Method for MRAM Freelayers - An etching process is employed to selectively pattern an exposed magnetic layer of a magnetic thin film structure. The etching process includes exposing the magnetic layer to an etchant composition including at least one weakly absorbing acid, a surfactant inhibitor soluble in the at least one weakly absorbing acid, and at least one cation additive. The presence of the at least one cation additive increases dissolution inhibition of an underlying tunnel barrier layer (i.e., increases etch selectivity) and permits the use of more soluble surfactant inhibitors in the etchant composition. | 04-08-2010 |
| 20100184301 | Methods for Preventing Precipitation of Etch Byproducts During an Etch Process and/or Subsequent Rinse Process - Methods for processing a microelectronic topography include selectively etching a layer of the topography using an etch solution which includes a fluid in a supercritical or liquid state. In some embodiments, the etch process may include introducing a fresh composition of the etch solution into a process chamber while simultaneously venting the chamber to inhibit the precipitation of etch byproducts. A rinse solution including the fluid in a supercritical or liquid state may be introduced into the chamber subsequent to the etch process. In some cases, the rinse solution may include one or more polar cosolvents, such as acids, polar alcohols, and/or water mixed with the fluid to help inhibit etch byproduct precipitation. In addition or alternatively, at least one of the etch solution and rinse solution may include a chemistry which is configured to modify dissolved etch byproducts within an ambient of the topography to inhibit etch byproduct precipitation. | 07-22-2010 |
| 20100304573 | STABILIZED ETCHING SOLUTIONS FOR CU AND CU/NI LAYERS - The present invention relates to new storage-stable solutions which can be used in semiconductor technology to effect specific etching of copper metallization layers and also Cu/Ni layers. With the new etch solutions it is possible to carry out etching and patterning of all-copper metallizations, layers of copper/nickel alloys, and also successive copper and nickel layers. | 12-02-2010 |
| 20110081785 | SOLUTION FOR THE SELECTIVE REMOVAL OF METAL FROM ALUMINUM SUBSTRATES - The present disclosure relates to a solution for selectively removing metal, such as Ta or TaN, from a substrate, such as an aluminum containing substrate. The solution comprises an acid, such as HF or buffered HF, an ingredient comprising a fluorine ion, such as ammonium fluoride (NH | 04-07-2011 |
| 20110223772 | FABRICATION OF SEMICONDUCTOR INTERCONNECT STRUCTURE - An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions. | 09-15-2011 |
| 20120231632 | Novel Etching Composition - This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition. | 09-13-2012 |
| 20130273745 | ETCHING PASTE, PRODUCTION METHOD THEREOF, AND PATTERN FORMING METHOD USING THE SAME - An etching paste and a method of forming a pattern, the etching paste including an organic binder; phosphoric acid; a nitrogen-containing compound; and a solvent, the nitrogen-containing compound including at least one selected from amine compounds represented by Formula 1 and ammonium compounds represented by Formula 2. | 10-17-2013 |
| 20140038420 | COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING METAL NITRIDES - A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme. | 02-06-2014 |
| 20140073140 | Etching Composition - This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water. | 03-13-2014 |
| 20140120734 | Novel Etching Composition - This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water. | 05-01-2014 |
| 20140141622 | PROCESS FOR ETCHING METALS - Processes are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions. | 05-22-2014 |
| 20140179112 | High Productivity Combinatorial Techniques for Titanium Nitride Etching - Provided are methods of High Productivity Combinatorial testing of semiconductor substrates, each including multiple site isolated regions. Each site isolated region includes a titanium nitride structure as well as a hafnium oxide structure and/or a polysilicon structure. Each site isolated region is exposed to an etching solution that includes sulfuric acid, hydrogen peroxide, and hydrogen fluoride. The composition of the etching solution and/or etching conditions are varied among the site isolated regions to study effects of this variation on the etching selectivity of titanium nitride relative to hafnium oxide and/or polysilicon and on the etching rates. The concentration of sulfuric acid and/or hydrogen peroxide in the etching solution may be less than 7% by volume each, while the concentration of hydrogen fluoride may be between 50 ppm and 200 ppm. In some embodiments, the temperature of the etching solution is maintained at between about 40° C. and 60° C. | 06-26-2014 |
| 20140363981 | Selective Etching of Titanium Nitride - Provided are methods for processing semiconductor substrates having titanium nitride (TiN) structures as well as aluminum (Al) structures and, in some embodiments, other structures, such as silicon germanium (SiGe), tantalum nitride (TaN), hafnium oxide (HfOx), silicon nitride (SiN), and/or silicon oxide (SiO | 12-11-2014 |
| 20150099370 | Chemical Circulation System and Methods of Cleaning Chemicals - A method includes passing a chemical solution through a metal-ion absorber, wherein metal ions in the metal-ion absorber are trapped by the metal-ion absorber. The chemical solution exiting out of the metal-ion absorber is then used to etch a metal-containing region, wherein the metal-containing region includes a metal that is of a same element type as the metal ions. | 04-09-2015 |
| 20150118860 | ETCHING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND SEMICONDUCTOR DEVICE USING THE SAME - An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %. | 04-30-2015 |
| 20150371872 | Solution Based Etching of Titanium Carbide and Titanium Nitride Structures - Provided are methods for fabricating transistors using a gate last approach. These methods involve etching of titanium nitride and titanium carbide structures while preserving high k-dielectric structures. The titanium carbide structures may also include aluminum. Etching may be performed in one or more etching solutions, each including hydrogen peroxide. Titanium nitride and titanium carbide structures can be etched simultaneously (non-selectively) in the same etching solution that also includes hydrochloric acid, in addition to hydrogen peroxide, and maintained at about 25° C. and 85° C. In some embodiments, titanium nitride structures and titanium carbide structures may be etched separately (selectively) in different operations and using different etching solutions. The titanium nitride structures may be etched in a diluted hydrogen peroxide solution maintained at about 25° C. and 85° C. The titanium carbide structures may be etched in a solution that also includes ammonium hydroxide, in addition to hydrogen peroxide, and maintained at about 25° C. | 12-24-2015 |
| 20150380370 | METHOD FOR ETCHING SEMICONDUCTOR STRUCTURES AND ETCHING COMPOSITION FOR USE IN SUCH A METHOD - A method of etching a semiconductor structure, comprises contacting an under bump metallization (UBM) with an etching composition. The UBM includes an underlying layer comprising titanium and an overlying layer comprising a second metal. The etching composition is a liquid comprising at least 0.1 wt % hydrofluoric acid and at least 0.1 wt % phosphoric acid. | 12-31-2015 |
| 20160056054 | ETCHING METHOD, ETCHING LIQUID AND ETCHING LIQUID KIT TO BE USED IN SAID METHOD, AND SEMICONDUCTOR SUBSTRATE PRODUCT MANUFACTURING METHOD - There is provided an etching method of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing at least one metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), the method including: bringing an etching liquid which contains a specific acid compound into contact with the second layer and selectively removing the second layer. | 02-25-2016 |
| 20160099158 | METHOD FOR REMOVING METAL OXIDE - The present invention relates to a method of selectively removing metal oxide, particularly tungsten oxide without etching the un-oxidized metal. The method removes metal oxide with little or no loss of the clean metal to improve the contact resistance for contact metal in semiconductor device fabrication. The method includes a step of exposing a substrate containing a tungsten oxide layer over a tungsten layer to a low oxygen aqueous ammonia solution to selectively remove the tungsten oxide layer. The low oxygen aqueous ammonia solution has an ammonia concentration in a range of about 0.01 M to about 2.0 M. The oxygen level in the solution is no more than 50 ppb. The solution may further contain a corrosion inhibitor and/or a compound having two or more carboxyl groups separated by at least one carbon atom. | 04-07-2016 |
| 20160177457 | ETCHING AGENT, ETCHING METHOD AND ETCHING AGENT PREPARATION LIQUID | 06-23-2016 |
| 20180025921 | SUBSTRATE TREATING APPARATUS | 01-25-2018 |
