| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438753000 | Silicon | 42 |
| 20080233760 | Process for the Treatment of Substrate Surfaces - The present invention relates in general terms to the treatment or processing of substrate surfaces. In particular, the invention relates to processes for modifying the surface of silicon wafers. | 09-25-2008 |
| 20080268652 | Solution used in the fabrication of a porous semiconductor material, and a method of fabricating said material - A solution includes hydrofluoric acid, an alcohol, and a metallic salt, in which the metal has a redox potential that is positive relative to a hydrogen electrode at 25° C. | 10-30-2008 |
| 20090004876 | Method for Etching Single Wafer - An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed. | 01-01-2009 |
| 20090081881 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD FOR PERFORMING ETCHING PROCESS WITH PHOSPHORIC ACID SOLUTION - An additive containing a hexafluorosilicic acid solution (H | 03-26-2009 |
| 20090117749 | Etching Method of Single Wafer - Local shape collapse of a wafer end portion is suppressed to the minimum level, and a wafer front surface as well as a wafer end portion is uniformly etched while preventing an etchant from flowing to a wafer rear surface. | 05-07-2009 |
| 20090246969 | METHOD FOR TEXTURING SILICON WAFERS FOR PRODUCING SOLAR CELLS - In a method for texturing silicon wafers for producing solar cells, the step of introducing a silicon wafer involves the use of a texturing solution which is at a temperature of at least 80 degrees Celsius and which comprises water admixed with 1 percent by weight to 6 percent by weight KOH or 2 percent by weight to 8 percent by weight NaOH and with a surfactant or a surfactant mixture constituting less than 0.01 percent by weight. Very economic texturing can be performed in this way. | 10-01-2009 |
| 20090253268 | POST-CONTACT OPENING ETCHANTS FOR POST-CONTACT ETCH CLEANS AND METHODS FOR FABRICATING THE SAME - Post-contact opening etchants for post-etch cleans and methods for fabricating such etchants are provided. In an exemplary embodiment, a post-contact opening etchant comprises anhydrous hydrogen fluoride and a fluoride-dissociation modulating agent. In another embodiment, a method for fabricating a post-contact opening etchant comprises providing anhydrous hydrogen fluoride, combining the anhydrous hydrogen fluoride and a fluoride-dissociation modulating agent, and mixing the anhydrous hydrogen fluoride and the fluoride-dissociation modulating agent to form a homogeneous mixture. | 10-08-2009 |
| 20100124823 | NOVEL METHOD FOR REMOVING DUMMY POLY IN A GATE LAST PROCESS - A method is provided for fabricating a semiconductor device. The method includes removing a silicon material from a gate structure located on a substrate through a cycle including: etching the silicon material to remove a portion thereof, where the substrate is spun at a spin rate, applying a cleaning agent to the substrate, and drying the substrate; and repeating the cycle, where a subsequent cycle includes a subsequent spin rate for spinning the substrate during the etching and where the subsequent spin rate does not exceed the spin rate of the previous cycle. | 05-20-2010 |
| 20100197144 | METHODS FOR DAMAGE ETCH AND TEXTURING OF SILICON SINGLE CRYSTAL SUBSTRATES - Methods for performing damage etch and texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Damage etch with a TMAH solution followed by texturing using solution of KOH or NaOH mixed with IPA is particularly advantageous. The substitution of some of the IPA with ethylene glycol further improves results. Also disclosed is a process that combines both damage etch and texturing etch into a single step. | 08-05-2010 |
| 20100323526 | METHOD OF PROCESSING SILICON SUBSTRATE AND METHOD OF MANUFACTURING SUBSTRATE FOR LIQUID DISCHARGE HEAD - A method of processing a substrate including the following steps: providing a silicon substrate that has an etching mask layer with an opening portion at a first surface thereof and has plane orientation of {100} with the surface of the silicon being exposed from the opening portion; preparing a recessed portion that faces from the first surface to a second surface, which is an opposite surface of the first surface, in the opening portion of the silicon substrate; and forming a penetration port that passes through the first surface and the second surface of the silicon substrate by executing crystalline anisotropic etching in the silicon substrate using an etching liquid in which an etching rate for etching a (100) surface of silicon is higher than an etching rate for etching a (110) surface of silicon, from the recessed portion of the silicon substrate toward the second surface. | 12-23-2010 |
| 20110014794 | DEVICE MADE OF SINGLE-CRYSTAL SILICON - A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described. | 01-20-2011 |
| 20110028000 | METHODS OF ETCHING SILICON-CONTAINING FILMS ON SILICON SUBSTRATES - A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified silicon-containing film, wherein the densified film has a first thickness. The method also includes exposing the silicon substrate to an aqueous solution comprising NH | 02-03-2011 |
| 20110059619 | SILICON ETCHING LIQUID AND ETCHING METHOD - In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid. | 03-10-2011 |
| 20110070744 | Silicon Texturing Formulations for Solar Applications - The current invention describes a process and texturing solution for texturing a crystalline silicon substrate to provide a light trapping surface within a crystalline silicon based solar cell. In an embodiment the texturing process includes a pre-treatment of hydrofluoric acid followed by the application of a texturing solution that includes potassium hydroxide (KOH) and butanol. The application of the texturing solution may be followed by a hydrofluoric acid post-treatment. A combinatorial method of optimizing the textured surface of a crystalline silicon substrate is also described. | 03-24-2011 |
| 20110117751 | NON-SELECTIVE OXIDE ETCH WET CLEAN COMPOSITION AND METHOD OF USE - Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials. | 05-19-2011 |
| 20110171834 | SILICON ETCHANT AND ETCHING METHOD - In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etchant having a long life of etchant and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etchant. | 07-14-2011 |
| 20110275222 | Silicon Texture Formulations With Diol Additives And Methods of Using The Formulations - The present disclosure includes a texture formulation that includes an aliphatic diol, an alkaline compound and water which provides a consistent textured region across a silicon surface suitable for solar cell applications. Processes for texturing a crystalline silicon substrate using these formulations are also described. | 11-10-2011 |
| 20110275223 | SOLUTION FOR INCREASING WAFER SHEET RESISTANCE AND/OR PHOTOVOLTAIC CELL POWER DENSITY LEVEL - Treating thin film amorphous or mono- or multi-crystalline silicon wafer substrate for use in a photovoltaic cell, the wafer substrate having at least one of a pn- or np junction and a partial phosphosilicate or borosilicate glass layer on a top surface of the wafer substrate, to increase at least one of (a) the sheet resistance of he wafer and (b) the power density level of the photovoltaic cell made from said wafer. The treatment solution being an acidic treatment solution of a buffered oxide etch (BOE) solution of at least one tetraalkylammonium hydroxide, acetic acid, at least one non-ionic surfactant, at least one metal chelating agent, a metal free source of ammonia, a metal free source, of fluoride ions, and water, mixed with an oxidizer solution and optionally water. | 11-10-2011 |
| 20110300715 | INTEGRATED METHOD AND SYSTEM FOR MANUFACTURING MONOLITHIC PANELS OF CRYSTALLINE SOLAR CELLS - A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. Contacts to the n- and p-layers are deposited, followed by gluing of a glass layer to the PV cell array. The porous silicon film is then separated by exfoliation in a peeling motion across all the cells attached together above, followed by attaching a strengthening layer on the PV cell array. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels. | 12-08-2011 |
| 20120003839 | CHEMICAL TREATMENT METHOD - A chemical treatment apparatus and a method for performing a chemical treatment of a wafer, etc., by supplying a chemical via a cell. The apparatus includes a cylindrical inner cell and a cylindrical outer cell with open ends disposed at an outer circumference of the inner cell. The outer cell is axially movable to vary the width of a slit formed between a bottom end of the outer cell and a top surface of the substrate-holding means by the axial movement, thereby adjusting the discharge rate of the chemical and varying the pressure of the chemical. | 01-05-2012 |
| 20120088372 | METHOD OF FORMING MICRO-PORE STRUCTURES OR TRENCH STRUCTURES ON SURFACE OF SILICON WAFER SUBSTRATE - A method of forming micro-pore structures or trench structures on a surface of a silicon wafer substrate comprises (A) forming at least a noble-metal alloy particle on the surface of the silicon wafer substrate; and (B) then followed by employing a chemical wet etching on the surface of the silicon wafer substrate. During the processes, noble-metal alloy particle is used to catalyze the oxidation of the silicon wafer substrate surface in contact therewith, and an etchant is used to simultaneous etch the silicon dioxide to result in local micro-etching at the surface of the silicon wafer substrate, thereby forming micro-pore structures or trench structures on the surface of the silicon wafer substrate. The method increases the power conversion efficiency of the solar cells and reduces the manufacturing costs so as to increase the production benefits of the solar cells. | 04-12-2012 |
| 20120094501 | ETCHING COMPOSITION, IN PARTICULAR FOR SILICON MATERIALS, METHOD FOR CHARACTERIZING DEFECTS ON SURFACES OF SUCH MATERIALS AND PROCESS OF TREATING SUCH SURFACES WITH THE ETCHING COMPOSTION - The present invention relates to an etching composition, in particular, for silicon materials, a method for characterizing defects on surfaces of such materials and a process of treating such surfaces with the etching composition, wherein the etching composition comprises an organic oxidant dissolved in a solvent, and a deoxidant, wherein the deoxidant comprises HF or HBF | 04-19-2012 |
| 20120190210 | SILICON ETCHING SOLUTION AND ETCHING METHOD - Provided are an etching solution in which in etching processing of silicon, particularly in anisotropic etching processing of silicon in a manufacturing process of semiconductors or MEMS parts, a high etching rate is realized by suppressing a lowering an Si etching rate, which is characteristic in a hydroxylamine-containing etching solution and is caused when Cu exists in the solution, and an etching method. The etching solution is a silicon etching solution which is an alkaline aqueous solution containing an alkaline hydroxide, hydroxylamine, and a thiourea and is characterized by dissolving anisotropically monocrystalline silicon therein, and the etching method is an etching method of silicon using the etching solution. | 07-26-2012 |
| 20120208370 | METHOD FOR ETCHING OF SILICON SURFACES - The invention relates to a method for etching of silicon surfaces with the following steps: | 08-16-2012 |
| 20120225563 | ETCHING LIQUID FOR ETCHING SILICON SUBSTRATE REAR SURFACE IN THROUGH SILICON VIA PROCESS AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP HAVING THROUGH SILICON VIA USING THE ETCHING LIQUID - Disclosed are an etching liquid which is used for etching a silicon substrate rear surface in a through silicon via process, etches only a silicon substrate without etching a connecting plug composed of a metal such as copper, tungsten, etc., or polysilicon or the like, and has an excellent etching rate; and a method for manufacturing a semiconductor chip having a through silicon via using the same. The etching liquid is an etching liquid for etching a silicon substrate rear surface in a through silicon via process containing potassium hydroxide, hydroxylamine, and water; and the method for manufacturing a semiconductor chip includes a silicon substrate rear surface etching step using the etching liquid. | 09-06-2012 |
| 20120289055 | LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE - A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water. | 11-15-2012 |
| 20120295447 | Compositions and Methods for Texturing of Silicon Wafers - Pre-texturing composition for texturing silicon wafers having one or more surfactants. Methods of texturing silicon wafers having the step of wetting said wafer with a pre-texturing composition having one or more surfactants followed by a texturing step. | 11-22-2012 |
| 20120329284 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND METHOD FOR REDUCING MICROROUGHNESS OF SEMICONDUCTOR SURFACE - Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved. | 12-27-2012 |
| 20130012028 | High purity, environmentally clean method and apparatus, for high rate, liquid anisotropic etching of single crystal silicon or etching of polycrystalline silicon, using an overpressure of ammonia gas above aqueous ammonium hydroxide - A high purity, non-toxic, environmentally friendly method for anisotropically etching single crystal silicon and etching polysilicon, suitable for microelectronics, optoelectronics and microelectromechanical (MEMS) device fabrication, using high purity aqueous ammonium hydroxide (NH | 01-10-2013 |
| 20130122717 | METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES - A method for treating silicon to form pillars, especially for use as the active anode material in Li-ion batteries, is disclosed. The process is simple to operate on a commercial scale since it uses a solution containing only a small number of ingredients whose concentration needs to be controlled and it can be cheaper to operate than previous processes. The solution includes: 0.01 to 5M HF 0.002 to 0.2M of metal ions capable of nucleating on and forming a porous layer comprising regions of elemental metal on the silicon surface; 0.001 to 0.7M of an oxidant selected from the group O | 05-16-2013 |
| 20130130508 | Compositions and Methods for Texturing of Silicon Wafers - Texturing composition for texturing silicon wafers having one or more surfactants. Methods of texturing silicon wafers having the step of wetting said wafer with a texturing composition having one or more surfactants. | 05-23-2013 |
| 20130137277 | Critical Concentration in Etching Doped Poly Silicon With HF/HNO3 - In some embodiments, the present invention discloses an etchant solution hydrochloric acid and nitric acid to etch doped polysilicon at low etch rates. The doped polysilicon can be doped with Ge, In, B and Ga. Preferably, the concentration of hydrochloric acid can be greater than 1 vol %, and the concentration of nitric acid is greater than 15 vol %. | 05-30-2013 |
| 20130137278 | TEXTURE-ETCHANT COMPOSITION FOR CRYSTALLINE SILICON WAFER AND METHOD FOR TEXTURE-ETCHING (2) - Disclosed herein is an etching composition for texturing a crystalline silicon wafer, comprising, based on a total amount of the composition: (A) 0.1 to 20 wt % of an alkaline compound; (B) 0.1 to 50 wt % of a cyclic compound having a boiling point of 100° C. or more; (C) 0.000001 to 10 wt % of a fluorine-based surfactant; and (D) residual water. The etching composition can maximize the absorbance of light of the surface of a crystalline silicon wafer. | 05-30-2013 |
| 20130178069 | SILICON ETCHING FLUID AND METHOD FOR PRODUCING TRANSISTOR USING SAME - The present invention relates to a silicon etching solution which is used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and a metal gate containing hafnium, zirconium, titanium, tantalum or tungsten by the method of removing the dummy gate made of silicon to replace the dummy gate with the metal gate and which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 0.01 to 40% by weight of at least one polyhydric alcohol selected from the group consisting of specific polyhydric alcohols and a non-reducing sugar, and 40 to 99.89% by weight of water, and a process for producing a transistor using the silicon etching solution. | 07-11-2013 |
| 20130203263 | SILICON ETCHANT AND METHOD FOR PRODUCING TRANSISTOR BY USING SAME - According to the present invention, there is provided an etching solution used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and an aluminum metal gate by the method of removing the dummy gate made of silicon to replace the dummy gate with the aluminum metal gate, and a process for producing a transistor using the etching solution. The present invention relates to a silicon etching solution used for etching the dummy gate made of silicon which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 5 to 50% by weight of at least one polyhydric alcohol represented by the general formula (2) and 40 to 94.9% by weight of water, and a process for producing a transistor using the silicon etching solution. | 08-08-2013 |
| 20140030897 | POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME - Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved. | 01-30-2014 |
| 20140235064 | ETCHANT COMPOSITION AND ETCHING METHOD - This invention is concerning an etchant composition used to etch a silicon-containing film formed on a target substrate. The etchant composition includes at least one selected from the group consisting of an organic compound containing a hydroxyl group, an organic compound containing a carbonyl group, an inorganic acid and inorganic salt, hydrofluoric acid, ammonium fluoride and an organic acid. | 08-21-2014 |
| 20140273501 | WET STRIP PROCESS FOR AN ANTIREFLECTIVE COATING LAYER - An silicon-containing antireflective coating (SiARC) material is applied on a substrate. The SiARC material which includes a base polymer and may include a boron silicate polymer including silsesquioxane. An etch sequence is utilized, which includes a first wet etch employing a basic solution, a second wet etch employing an acidic solution, and a third wet etch employing another basic solution. The first wet etch can be employed to break up the boron silicate polymer, and the second wet etch can remove the base polymer material, and the third wet etch can remove the residual boron silicate polymer and other residual materials. The SiARC material can be removed from a substrate employing the etch sequence, and the substrate can be reused for monitoring purposes. | 09-18-2014 |
| 20140308819 | METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND ETCHING METHOD TO BE USED THEREIN - A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film. | 10-16-2014 |
| 20150056818 | SYSTEM AND METHOD FOR BLACK SILICON ETCHING UTILIZING THIN FLUID LAYERS - Systems and methods for etching the surface of a substrate may utilize a thin layer of fluid to etch a substrate for improved anti-reflective properties. The substrate may be secured with a holding fixture that is capable of positioning the substrate. A fluid comprising an acid and an oxidizer for etching may be prepared, which may optionally include a metal catalyst. An amount of fluid necessary to form a thin layer contacting the surface of the substrate to be etched may be dispensed. The fluid may be spread into the thin layer utilizing a tray that the substrate is dipped into, a plate that is placed near the surface of the substrate to be etched, or a spray or coating device. | 02-26-2015 |
| 20160020113 | LIQUID COMPOSITION AND ETCHING METHOD FOR ETCHING SILICON SUBSTRATE - An etching method includes etching a silicon substrate with a liquid composition containing an alkaline organic compound, water, and a boron compound with a content in the range of 1% by mass to 14% by mass. The boron compound is at least one of boron sesquioxide, sodium tetraborate, metaboric acid, sodium perborate, sodium borohydride, zinc borate, and ammonium borate. | 01-21-2016 |
| 20160083650 | ETCHING LIQUID, KIT OF SAME, ETCHING METHOD USING SAME, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT - There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B. | 03-24-2016 |
