Class / Patent application number | Description | Number of patent applications / Date published |
438752000 | Germanium | 6 |
20090149030 | OXIDE ETCHING METHOD - There is provided an etching method of an amorphous oxide layer containing In and at least one of Ga and Zn, which includes etching the amorphous oxide layer using an etchant containing any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid. | 06-11-2009 |
20090215275 | Defect Etching of Germanium - The present invention provides an etching solution for revealing defects in a germanium layer, a method for revealing defects in a germanium layer using such an etching solution and to a method for making such an etching solution. The etching solution according to embodiments of the present invention is able to exhibit an etch rate of between 4 nm·min | 08-27-2009 |
20100267244 | METHOD FOR TREATING GERMANIUM SURFACES AND SOLUTIONS TO BE EMPLOYED THEREIN - The present invention concerns an improved method for treating germanium surfaces in order to reveal crystal defects. | 10-21-2010 |
20120034787 | Defect Etching of Germanium - The present invention provides an etching solution for revealing defects in a germanium layer, a method for revealing defects in a germanium layer using such an etching solution and to a method for making such an etching solution. The etching solution according to embodiments of the present invention is able to exhibit an etch rate of between 4 nm·min | 02-09-2012 |
20130109191 | METHOD TO PREPARE SEMI-CONDUCTOR DEVICE COMPRISING A SELECTIVE ETCHING OF A SILICIUM-GERMANIUM LAYER | 05-02-2013 |
20130309875 | INTERFACE TREATMENT METHOD FOR GERMANIUM-BASED DEVICE - Disclosed herein is an interface treatment method for germanium-based device, which belongs to the field of manufacturing technologies of ultra large scaled integrated (ULSI) circuits. In the method, the natural oxide layer on ther surface of the germanium-based substrate is removed by using a concentrated hydrochloric acid solution having a mass percentage concentration of 15%˜36%, and dangling bonds of the surface are performed a passivation treatment by using a diluted hydrochloric acid solution having a mass percentage concentration of 5%˜10% so as to form a stable passivation layer on the surface. This method makes a good foundation for depositing a high-K (high dielectric constant) gate dielectric on the surface of the germanium-based substrate after cleaning and passivating, enhances quality of the interface between the gate dielectric and the substrate, and improves the electrical performance of germanium-based MOS device. | 11-21-2013 |