| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438749000 | Sequential application of etchant | 10 |
| 20130122716 | Methods of Controlling the Etching of Silicon Nitride Relative to Silicon Dioxide - Disclosed herein are methods of controlling the etching of a layer of silicon nitride relative to a layer of silicon dioxide. In one illustrative example, the method includes providing an etch bath that is comprised of an existing etchant adapted to selectively etch silicon nitride relative to silicon dioxide, performing an etching process in the etch bath using the existing etchant to selectively remove a silicon nitride material positioned above a silicon dioxide material on a plurality of semiconducting substrates, determining an amount of the existing etchant to be removed based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath and determining an amount of new etchant to be added to the etch bath based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath. | 05-16-2013 |
| 20140080313 | ETCHING COMPOSITION AND METHOD FOR ETCHING A SEMICONDUCTOR WAFER - An etching composition for a semiconductor wafer is provided, including 0.5-50 wt % base, 10-80 wt % alcohol, 0.01-15 wt % additive and water. A method for etching a semiconductor wafer is also provided. When the etching composition is applied to the entire surface or a partial surface of the semiconductor wafer at 60-200° C., the etching composition reacts on the semiconductor wafer to form a foam that etches the semiconductor wafer and includes a solid, a liquid and a gas. At the same time, the additive forms an oxide mask on the surface of the semiconductor wafer. Therefore, an excellent texture structure is formed on the surface of the semiconductor wafer, and a single surface of the semiconductor wafer is etched. | 03-20-2014 |
| 20140170857 | Customizing Etch Selectivity with Sequential Multi-Stage Etches with Complementary Etchants - A method of combinatorial processing involving etching a first material and a second material on a substrate comprising: etching the first material with a high first etch rate with a first etchant; etching the second material with a high second etch rate with a second etchant, wherein the first etchant and the second etchant are used sequentially without being separated by a rinse. | 06-19-2014 |
| 20150357197 | SELECTIVE ETCHING OF SILICON WAFER - A method of preparing an etch solution and thinning semiconductor wafers using the etch solution is proposed. The method includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio; causing the mixture to react with portions of one or more silicon wafers, the portions of the one or more silicon wafers are doped with boron in a level no less than 1×10 | 12-10-2015 |
| 438750000 | To same side of substrate | 6 |
| 20110143550 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, APPARATUS FOR PROCESSING SUBSTRATE, AND COMPUTER READABLE MEDIUM - A method for manufacturing a semiconductor device, including: partially removing a first layer formed on a wafer supported by a support member by supplying a first liquid at a temperature of | 06-16-2011 |
| 20120190209 | METHOD FOR PRODUCING AND STRUCTURING A ZINC OXIDE LAYER AND ZINC OXIDE LAYER - Disclosed is a method for producing ZnO contact layers for solar cells. The layers are etched using hydrofluoric acid so as to generate a texture. | 07-26-2012 |
| 20140256151 | METHOD FOR REMOVING NITRIDE MATERIAL - A method for removing silicon nitride material includes following steps. A substrate having at least a gate structure formed thereon is provided, and at least a silicon nitride hard mask is formed on top of the gate structure. A first removal is performed to remove a portion of the silicon nitride hard mask with a first phosphoric acid (H | 09-11-2014 |
| 20160064207 | SEQUENTIAL ETCHING TREATMENT FOR SOLAR CELL FABRICATION - A method of processing a silicon substrate can include etching the silicon substrate with a first etchant having a first concentration and etching with a second etchant having a second concentration. In an embodiment, the second concentration of the second etchant can be greater than the first concentration of the first etchant. In one embodiment, the first etchant can be a different type of etchant than the second etchant. In an embodiment, the first and second etchant can be the same type of etchant. In some embodiments the silicon substrate can be cleaned with a first cleaning solution to remove contaminants from the silicon substrate prior to etching with the first etchant. In an embodiment, the silicon substrate can be cleaned with a second cleaning solution after etching the silicon substrate with a second etchant. | 03-03-2016 |
| 438751000 | Each etch step exposes surface of an adjacent layer | 2 |
| 20090075485 | METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE - A method for forming a fine pattern of a semiconductor device comprises: forming a first hard mask film and an etch barrier film over a semiconductor substrate; forming a sacrificial pattern over the etch barrier film; forming a spacer on sidewalls of the sacrificial pattern; removing the sacrificial pattern; etching the etch barrier film and the hard mask film with the spacer as an etch mask to form an etch barrier pattern and a hard mask pattern; and removing the spacer and the etch barrier pattern, thereby improving yield and reliability of the device. | 03-19-2009 |
| 20090170336 | METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE - A method for forming a pattern of a semiconductor device comprises forming a spacer with an oxide film in a SPT process, and removing the spacer formed to have a horn shape before etching an underlying layer, so that the horn shape is transcribed in a lower portion, thereby facilitating control of critical dimension in etching the underlying layer so as to improve a characteristic of the device. | 07-02-2009 |
