| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438748000 | Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant | 31 |
| 20080254640 | METHOD OF REMOVING MATERIAL LAYER AND REMNANT METAL - A method of removing material layer is disclosed. First, a semiconductor substrate is fixed on a rotating platform, where a remnant material layer is included on the surface of the semiconductor substrate. Afterward, an etching process is carried out. In the etching process, the rotating platform is rotated, and an etching solution is sprayed from a center region and a side region of the rotating platform toward the semiconductor substrate until the material layer is removed. Since the semiconductor substrate is etched by the etching solution sprayed from both the center region and the side region of the rotating platform, the etching uniformity of the semiconductor substrate is improved. | 10-16-2008 |
| 20090075484 | Method of Processing A Substrate, Spin Unit for Supplying Processing Materials to A Substrate, and Apparatus for Processing A Substrate Having the Same - In a spin unit for rotating a substrate and a method of processing the substrate, the substrate is secured on a support and is rotated on the support. Processing materials including drying gases, etching solutions and cleaning solutions are selectively supplied onto a bottom surface of the rotating substrate. The same processing materials are also selectively supplied onto a top surface of the substrate. The top and bottom surfaces of the substrate are simultaneously processed by simultaneous supply of the processing materials through the first and second sub-injectors. | 03-19-2009 |
| 20090186488 | SINGLE WAFER ETCHING APPARATUS - A single wafer etching apparatus is an apparatus that supplies etching liquid to an upper face of a thin discoid wafer obtained by slicing a semiconductor ingot while rotating the wafer to etch the upper face and an edge face of the wafer. The apparatus includes: a first nozzle for supplying etching liquid to the upper face of the wafer; and a second nozzle for supplying etching liquid to the edge face of the wafer that is opposed to the edge face of the wafer. The second nozzle is fixed at a predetermined position in a range of −10 mm to 20 mm from an end of an outer periphery of the wafer toward an inner side of the wafer in the radial direction. The apparatus includes a lower face blowing mechanism by which etching liquid flowing along the edge face of the wafer is blown off by gas jet toward an outer side in the radial direction of the wafer. | 07-23-2009 |
| 20090209110 | SPIN ETCHING METHOD FOR SEMICONDUCTOR WAFER - A spin etching method for etching a back-side surface of a semiconductor wafer provided with a plurality of devices on the face side and subjected to back grinding, wherein the semiconductor wafer is held with its back-side surface down, and the back-side surface of the semiconductor wafer is supplied with an etching liquid from an etching liquid supply nozzle disposed on the lower side of the semiconductor wafer while the semiconductor wafer being rotated. | 08-20-2009 |
| 20090317981 | Substrate treating apparatus and method for selectively etching substrate surface - Provided is a substrate treating method for selectively etching a surface of a substrate. In the substrate treating method, an etchant is supplied to a center portion of a rotating substrate through a first nozzle, and an etch prevention fluid is supplied through a second nozzle disposed at a predetermined position apart from the center portion of the substrate so as to dilute the etchant. | 12-24-2009 |
| 20100029088 | Modulated metal removal using localized wet etching - An apparatus for wet etching metal from a semiconductor wafer comprises a wafer holder for rotating a wafer and a plurality of nozzles for applying separate flow patterns of etching liquid to the surface of the wafer. The flow patterns impact the wafer in distinct band-like impact zones. The flow pattern of etching liquid from at least one nozzle is modulated during a total etching time control the cumulative etching rate in one local etch region relative to the cumulative etching rate in one or more other local etch regions. Some embodiments include a lower etch chamber and an upper rinse chamber separated by a horizontal splash shield. Some embodiments include a retractable vertical splash shield used to prevent splashing of etching liquid onto the inside walls of a treatment container. An etch-liquid delivery system includes a plurality of nozzle flow paths having corresponding nozzle flow resistances, and a plurality of drain flow paths having corresponding drain flow resistances. Nozzle flow resistances and drain flow resistances are matched so that switching the flow from a nozzle to a corresponding drain flow path does not change the flow rate of etching liquid through other nozzles. A non-wafer-contacting measuring device measures a metal thickness on a rotating semiconductor wafer during metal wet etching by immersing a plurality of electrodes in etching liquid in close proximity to the wafer surface of the rotating wafer and determining electrical resistance between a plurality of electrodes. | 02-04-2010 |
| 20100055924 | APPARATUS AND METHOD FOR EDGE BEVEL REMOVAL OF COPPER FROM SILICON WAFERS - Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed. | 03-04-2010 |
| 20100130021 | METHOD FOR PROCESSING A SILICON-ON-INSULATOR STRUCTURE - A method is disclosed for processing the cleaved surface of a silicon-on-insulator structure. The silicon-on-insulator structures comprises a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defining an outer surface of the structure. The methods disclosed include an etching process to reduce the time and cost required to process the silicon-on-insulator structure to remove the surface damage and defects formed when a portion of the donor wafer is separated along a cleave plane from the silicon-on-insulator structure. The method includes, annealing the structure, etching the cleaved surface, and performing a non-contact smoothing process on the cleaved surface. | 05-27-2010 |
| 20110151675 | DEVICE AND PROCESS FOR LIQUID TREATMENT OF A WAFER SHAPED ARTICLE - A spin chuck in an apparatus for single wafer wet processing has structures at its periphery that, in combination with a supported wafer, form a series of annular nozzles that direct flowing gas from a chuck-facing surface of the wafer, around the edge of the wafer, and exhaust the gas away from the non-chuck-facing surface of the wafer, thereby preventing treatment fluid applied to the non-chuck-facing surface from contacting the edge region of the wafer. Retaining pins with enlarged heads engage the wafer edge and prevent it from being displaced upwardly when a high flow rate of gas is utilized. | 06-23-2011 |
| 20120077348 | SUBSTRATE TREATMENT METHOD - There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate. | 03-29-2012 |
| 20120225562 | Methods Of Removing Noble Metal-Containing Nanoparticles - Some embodiments include methods of removing noble metal-containing particles from over a substrate. The substrate is exposed to a composition that reduces adhesion between the noble metal-containing particles and the substrate, and simultaneously the substrate is spun to sweep at least some of the noble metal-containing particles off from the substrate. Some embodiments include methods in which tunnel dielectric material is formed across a semiconductor wafer. Metallic nanoparticles are formed across the tunnel dielectric material. A stack of two or more different materials is formed over the metallic nanoparticles. A portion of the stack is covered with a protective mask while another portion of the stack is left unprotected. The unprotected portion of the stack is removed to expose some of the metallic nanoparticles. The semiconductor wafer to is subjected to etchant suitable to undercut at least some of the exposed metallic nanoparticles, and simultaneously the semiconductor wafer is spun. | 09-06-2012 |
| 20120276749 | Method and Device for Treating Silicon Substrates - In a method for processing monocrystalline silicon wafers, which are transported while lying flat along a horizontal transport path, etching solution for texturing the surface is applied from above by means of nozzles or the like. The etching solution is applied from above several times in succession onto the upper side of the silicon substrates, remains there and reacts with the silicon substrate. | 11-01-2012 |
| 20130045606 | SEMICONDUCTOR DEVICE CLEANING METHOD AND APPARATUS - A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing. | 02-21-2013 |
| 20130102158 | METHOD, APPARATUS AND COMPOSITION FOR WET ETCHING - A liquid composition for wet etching has improved selectivity for polysilicon over silicon dioxide, even when the polysilicon is heavily doped and/or the silicon dioxide is a low temperature oxide. The composition comprises 0.05-0.4 percent by weight hydrofluoric acid, 15-40 percent by weight nitric acid, 55-85 percent by weight sulfuric acid and 2-20 percent by weight water. A method and apparatus for wet etching using the composition are also disclosed. | 04-25-2013 |
| 20130171831 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate. | 07-04-2013 |
| 20130203262 | Process for Silicon Nitride Removal Selective to SiGex - A method for selectively removing silicon nitride is described. In particular, the method includes providing a substrate having a surface with silicon nitride exposed on at least one portion of the surface and SiGe | 08-08-2013 |
| 20130267099 | CHEMICAL DISPENSING SYSTEM AND METHOD - A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer. | 10-10-2013 |
| 20130309874 | METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER-SHAPED ARTICLES - An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck. | 11-21-2013 |
| 20140051258 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD FOR CARRYING OUT CHEMICAL TREATMENT FOR SUBSTRATE - It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate. | 02-20-2014 |
| 20140051259 | SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD FOR CARRYING OUT CHEMICAL TREATMENT FOR SUBSTRATE - It is an object to reduce a chemical treating width in a peripheral edge part of a substrate while suppressing deterioration in each of uniformity of the chemical treating width and processing efficiency. In order to achieve the object, a substrate processing device for carrying out a chemical treatment for a substrate using a processing liquid having a reaction rate increased with a rise in temperature includes a substrate holding portion, a rotating portion for rotating the substrate held in the substrate holding portion in a substantially horizontal plane, a heating portion for injecting heating steam to a central part of a lower surface of the substrate to entirely heat the substrate, and a peripheral edge processing portion for supplying the processing liquid from above to a peripheral edge part of the substrate heated by the heating portion, thereby carrying out a chemical treatment for the peripheral edge part. | 02-20-2014 |
| 20140080312 | SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM - A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution. | 03-20-2014 |
| 20140349489 | METHOD AND APPARATUS FOR LIQUID TREATMENT OF WAFER-SHAPED ARTICLES - An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck. | 11-27-2014 |
| 20150093906 | SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS - A substrate treatment apparatus which can more efficiently regenerate phosphoric acid which is able to be returned to etching treatment along with such etching treatment as much as possible without using a large facility, that is a substrate treatment apparatus which treats a silicon substrate W on which a nitride film is formed by a liquid etchant which contains phosphoric acid, which comprises an etching treatment unit (the spin treatment unit | 04-02-2015 |
| 20150147888 | LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD, AND STORAGE MEDIUM - A liquid processing apparatus of the present disclosure holds and rotate a substrate in a substrate holding unit, ejects an etching liquid while moving a main nozzle of a main nozzle unit between a first position where the etching liquid reaches a center of the substrate and a second position closer to a peripheral side of the substrate than the first position, and then, ejects the etching liquid to the substrate from a sub nozzle provided at a third position closer to the peripheral side of the substrate than the first position at an ejection flow rate higher than that from the main nozzle. | 05-28-2015 |
| 20150318192 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND RECORDING MEDIUM - A heating processing performed on an outer peripheral portion of a substrate can be optimized. A substrate processing apparatus includes a holding unit configured to hold a substrate; a rotation unit configured to rotate the holding unit; a processing liquid supply unit configured to supply a processing liquid onto the substrate held in the holding unit; and a heating device configured to heat an outer peripheral portion of the substrate held in the holding unit. Further, the heating device includes a discharge flow path through which a gas is discharged toward the outer peripheral portion of the substrate held in the holding unit; a branch flow path through which a gas is discharged toward a region other than the substrate held in the holding unit; and a heating unit configured to heat the discharge flow path and the branch flow path. | 11-05-2015 |
| 20150325449 | SUBSTRATE TREATMENT METHOD - A substrate treatment method includes the steps of: supporting a substrate with a support member; arranging an extension surface such that the extension surface laterally surrounds one major surface of the substrate supported by the support member and extends continuously to the major surface of the substrate supported by the support member; rotating the substrate supported by the support member; and etching the substrate by supplying an etching liquid onto the major surface of the substrate supported by the support member, wherein the extension surface has higher affinity for the etching liquid than the major surface of the substrate supported by the support member. | 11-12-2015 |
| 20150340251 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method is implemented in a substrate processing apparatus including a substrate holding and rotating unit having a spin base rotatable about a predetermined vertical axis, and a processing cup surrounding the substrate holding and rotating unit and arranged to receive processing liquid splattering from the substrate rotated by the substrate holding and rotating unit, the substrate processing method including a substrate rotating step of rotating the spin base to rotate the substrate about the vertical axis at a predetermined liquid processing speed and, in parallel with the substrate rotating step, a processing liquid supplying step of supplying processing liquid onto the lower surface of the substrate at a predetermined first flow rate and supplying processing liquid onto the upper surface of the substrate at a second flow rate that is higher than the first flow rate. | 11-26-2015 |
| 20160005592 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - In a substrate processing apparatus, with an internal space of a chamber brought into a reduced pressure atmosphere, a first processing liquid is supplied onto an upper surface of a substrate while the substrate is rotated, and the first processing liquid is thereby quickly spread from a center portion toward a peripheral portion on the upper surface of the substrate. It is thereby possible to coat the upper surface of the substrate with the first processing liquid in a shorter time as compared with under normal pressure. Further, by sucking the first processing liquid from the vicinity of an edge of the substrate, it is possible to coat the upper surface of the substrate with the first processing liquid in a still shorter time. As a result, it is possible to shorten the time required for the processing of the substrate. | 01-07-2016 |
| 20160013068 | Process for Silicon Nitride Removal Selective to SiGex | 01-14-2016 |
| 20160086810 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a rotating holder for a substrate, a first nozzle used to eject a jet flow, a second nozzle used to discharge a continuous flow, and a nozzle moving unit integrally moving the first and second nozzles. A landing position of the continuous flow is located closer to a rotation center than a landing position of the jet flow is. At least movement paths of the landing positions of the jet flow and the continuous flow or flow directions of the continuous flow and the jet flow are different from each other. The movement paths are made to be different from each other by locating the landing position of the continuous flow downstream of the movement path of the landing position of the jet flow. The flow directions are made to be different from each other by tilting the continuous flow. | 03-24-2016 |
| 20160148818 | TITANIUM OXIDE FILM REMOVAL METHOD AND APPARATUS - In a titanium oxide film removal method and apparatus, a silicon substrate having the titanium oxide film is supported on a spin chuck. A first mixed aqueous solution including hydrofluoric acid and non-oxidizing acid or a second mixed aqueous solution including hydrofluoric acid and organic acid is supplied to the silicon substrate while rotating the silicon substrate together with the spin chuk. The first or the second aqueous solution comes into contact with the titanium oxide film existing on the silicon substrate to remove the titanium oxide film by a reaction between the first or the second mixed aqueous solution and the titanium oxide film. | 05-26-2016 |
